USRE40844E1 - High-side transistor driver for power converters - Google Patents

High-side transistor driver for power converters Download PDF

Info

Publication number
USRE40844E1
USRE40844E1 US11/437,007 US43700706A USRE40844E US RE40844 E1 USRE40844 E1 US RE40844E1 US 43700706 A US43700706 A US 43700706A US RE40844 E USRE40844 E US RE40844E
Authority
US
United States
Prior art keywords
transistor
floating
control
gate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US11/437,007
Inventor
Ta-Yung Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Components Industries LLC
Original Assignee
Fairchild Taiwan Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/671,272 priority Critical patent/US6836173B1/en
Application filed by Fairchild Taiwan Corp filed Critical Fairchild Taiwan Corp
Priority to US11/437,007 priority patent/USRE40844E1/en
Application granted granted Critical
Publication of USRE40844E1 publication Critical patent/USRE40844E1/en
Assigned to SYSTEM GENERAL CORP. reassignment SYSTEM GENERAL CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YANG, TA-YUNG
Assigned to FAIRCHILD (TAIWAN) CORPORATION reassignment FAIRCHILD (TAIWAN) CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: SYSTEM GENERAL CORPORATION
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC reassignment SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FAIRCHILD (TAIWAN) CORPORATION (FORMERLY SYSTEM GENERAL CORPORATION)
Assigned to DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT reassignment DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT PATENT SECURITY AGREEMENT Assignors: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081Power supply means, e.g. to the switch driver

Abstract

The high-side transistor driver according to the present invention includes a high-side transistor, a low-side transistor, a drive-buffer and an on/off transistor. When the low-side transistor is turned on, a charge-pump diode and a bootstrap capacitor produce a floating voltage. The drive-buffer will propagate the floating voltage to switch on the high-side transistor. The on/off transistor is used to switch the drive-buffer. The high-side transistor drive further includes a speed-up circuit. The speed-up circuit has a capacitive coupling for generating a differential signal. When the on/off transistor is turned off, the speed-up circuit accelerates the charge-up of the parasitic capacitor of the on/off transistor, thus accelerating high-side transistor switching.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a high-side transistor driver, and more particularly to a driver circuit for driving the high-side transistor of a power converter.

2. Description of the Prior Art

Many modern-day power converters use bridge circuits to control a voltage source coupled to a load. Power supplies and motor drivers are common examples of such power converters.

A bridge circuit normally has a pair of transistors connected in series across the voltage source, with a high-side transistor connected to the voltage source and a low-side transistor connected to the ground reference. The bridge circuit includes a common node that is connected between the high-side transistor and low-side transistor. This common node is also coupled to the load.

The high-side transistor and the low-side transistor are controlled to alternately conduct. As this happens, the voltage of the common node will swing between the voltage of the voltage source and the ground reference. Thus, the voltage of the node will adjust to the level of the voltage source when the high-side transistor is turned on. This happens, because turning on the high-side transistor shifts the bridge circuit into a low impedance state. In order to fully turn on the high -side transistor, a gate driving voltage higher than that of the voltage source is required. Therefore, the voltage at the gate and at the source of the high-side transistor must be floated with respect to the ground reference.

FIG. 1 shows a prior art bridge circuit that uses a bootstrap capacitor 30 and a charge-pump diode 40 to create a floating voltage VCC for driving the gate of the high-side transistor 10. When an on/off transistor 45 is turned on, the gate of the high-side transistor 10 will be connected to the ground reference via a diode 42. This will turn off the high-side transistor 10. Once the high-side transistor 10 is turned off and a low-side transistor 20 is turned on, the floating voltage of the bootstrap capacitor 30 will be charged up by a bias voltage VB via the charge-pump diode 40. Switching off the on/off transistor 45 will propagate the floating voltage VCC via a transistor 41 to the gate of the high-side transistor 10. This will turn on the high-side transistor 10.

One drawback of this circuit is that it has high switching losses in high-voltage applications. The on/off transistor 45 requires a high voltage manufacturing process to be suitable for high-voltage source applications (200 volts or more). Such high-voltage transistors typically have a large parasitic capacitor, which will increase the rising-time and slow down the switching signal. This will result in high switching losses from the high-side transistor. Therefore, this prior-art bridge circuit is inadequate for high-voltage and high-speed applications.

Many recently developed bridge circuit designs include methods of generating a suitable gate-voltage for the high-side transistor. Some well known prior-art inventions include U.S. Pat. No. 5,381,044 (Zisa, Belluso, Paparo), U.S. Pat. No. 5,638,025 (Johnson), and U.S. Pat. No. 5,672,992 (Nadd). These prior-art bridge circuits share the same drawbacks as the circuit shown in FIG. 1. The on/off transistors of these prior-art inventions cause high switching losses in high-voltage applications.

To overcome some of these objections, a prior art bridge circuit using a boost converter technique has been introduced in U.S. Pat. No. 6,344,959 (Milazzo). However, this technique uses a voltage doubling circuit that requires an additional switching element as well as other circuitry, thereby adding to the cost and complexity of the driving circuit. Moreover, high frequency charging and discharging of the voltage doubling capacitor in the charge pump will result in severe noise being generated at the voltage source terminal and the ground reference terminal.

The objective of the present invention is to overcome the drawbacks of prior art bridge circuits and to provide a high-side transistor driver that is suitable for high-voltage and high-speed applications.

SUMMARY OF THE INVENTION

The high-side transistor driver according to the present invention includes a floating-ground terminal and a floating-supply terminal. The floating-ground terminal is connected to the source of the high-side transistor, and the floating-supply terminal is used to supply a floating voltage to the high-side transistor driver.

The high-side transistor driver includes a charge-pump diode and a bootstrap capacitor connected in series. The charge-pump diode is supplied with a bias voltage. The bootstrap capacitor is connected to the floating-ground terminal. When the low-side transistor is turned on, the bias voltage will charge up the bootstrap capacitor and produce a floating voltage at the floating-supply terminal. The high-side transistor driver further includes an inverter to drive the high-side transistor. An on/off transistor is included to turn the high-side transistor on and off.

The high-side transistor driver further includes a speed-up circuit. The speed-up circuit includes an accelerative p-transistor, a current source, an inverter, and two protection diodes. When the accelerative p-transistor is turned on, the parasitic capacitor of the on/off transistor can be charged up rapidly. The accelerative p-transistor is coupled to a capacitor, so that the capacitance of the capacitor and the amplitude of the current supplied by the current source determine the on-time of the accelerative p-transistor. This ensures that the accelerative p-transistor will be turned on within the on-time period, following the rising-edge of the input signal.

The high-side transistor driver according to the present invention introduces a method of driving the high-side transistor in high-voltage and high-speed applications. Moreover, the efficiency of the high-side transistor driver is improved.

It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention, and, together with the description, serve to explain the principles of the invention.

FIG. 1 shows a traditional high-side transistor driver;

FIG. 2 shows the schematic circuit of a high-side transistor driver according to the present invention; and

FIG. 3 illustrates a timing diagram demonstrating the operation of the schematic circuit shown in FIG. 2.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 2 shows a high-side transistor driver according to the present invention, in which a floating-ground terminal is connected to a source of a high-side transistor 10. A floating-supply terminal VCC is used for supplying a floating voltage to the high-side transistor driver. A charge-pump diode 40 and a bootstrap capacitor 30 are connected in series. An anode of the charge-pump diode 40 is supplied with a bias voltage VB, and a negative terminal of the bootstrap capacitor 30 is connected to the floating-ground terminal VS. A cathode of the charge-pump diode 40 and a positive terminal of the bootstrap capacitor 30 are connecting to the floating-supply terminal VCC.

When a low-side transistor 20 is turned on, the bias voltage VB will charge up the bootstrap capacitor 30 and produce the floating voltage at the floating-supply terminal VCC. The high-side transistor driver further includes an inverter for driving the high-side transistor 10. The inverter consists of a p-transistor 53 and an n-transistor 51.

A source of the p-transistor 53 is connected to the floating-supply terminal VCC. A source of the n-transistor 51 is connected to the floating-ground terminal VS. A gate of the p-transistor 53 is connected to a gate of the n-transistor 51. A drain of the p-transistor 53 and a drain of the n-transistor 51 are tied together to drive a gate of the high-side transistor 10. A current sink 91 is connected from the gate of the n-transistor 51 to the floating-ground terminal VS. A source of a p-transistor 55 is connected to the floating-supply terminal VCC. To enable the n-transistor 51, a drain of the p-transistor 55 is coupled to the gate of the n-transistor 51. When the p-transistor 55 is turned on, the high-side transistor 10 will be switched off.

When the p-transistor 55 is turned off, the current sink 91 is used to turn on the p-transistor 53 and to switch on the high-side transistor 10. A current source 92 is connected from the floating-supply terminal VCC to a gate of the p-transistor 55. An anode of a diode 81 is connected to the floating-ground terminal VS. A cathode of the diode 81 is connected to the gate of the p-transistor 55. A transistor 50 is used to control the high-side transistor 10. The transistor 50 is a high-voltage transistor suitable for high-voltage applications. In order to switch the p-transistor 55, a drain of the transistor 50 is connected to the gate of the p-transistor 55. A source of the transistor 50 is connected to the ground reference. The current source 92 is utilized to rapidly charge up the parasitic capacitor of the transistor 50 and to turn off the p-transistor 55 while the transistor 50 is turned off.

An input of an inverter 60 is supplied with an input signal SIN. An output of the inverter 60 is connected to a gate of the transistor 50. Thus, the transistor 50 will be turned on and off in response to the input signal SIN.

The high-side transistor driver according to the present invention further includes a speed-up circuit 100 having a capacitive coupling. The speed-up circuit 100 has an output terminal connected to the gate of the p-transistor 55. An input of the speed-up circuit 100 is supplied with the input signal SIN. The speed-up circuit 100 generates a differential signal VG in response to the input signal SIN. The differential signal VG will accelerate the charge-up of the parasitic capacitor of the transistor 50, and thus speed-up the turn-on of the high-side transistor 10. The speed-up circuit 100 comprises a p-transistor 57, a current source 93, a capacitor 35, an inverter 65, a diode 82, and a diode 83. A source of the p-transistor 57 is connected to the floating-supply terminal VCC. A drain of the p-transistor 57 is connected to the output of the speed-up circuit 100. The p-transistor 57 will charge up the parasitic capacitor of the transistor 50 when the p-transistor 57 is turned on. The current source 93 is connected from the floating-supply terminal VCC to a gate of the p-transistor 57. The diode 82 and the diode 83 are connected in series. A cathode of the diode 83 is connected to the floating-supply terminal VCC. An anode of the diode 82 is connected to the floating-ground terminal VS. To protect the gate of the p-transistor 57 from over-voltage stress, a cathode of the diode 82 and an anode of the diode 83 are connected to the gate of the p-transistor 57. An input of the inverter 65 is connected to the input of the speed-up circuit 100. To provide capacitive coupling, the capacitor 35 is connected from an output of the inverter 65 to the gate of the p-transistor 57.

The capacitor 35 is coupled with the inverter 65 to generate the differential signal VG at the gate of the p-transistor 57 for switching the p-transistor 57. The on-time TON of the p-transistor 57 is determined in response to the amplitude of the current from the current source 93 and the capacitor of the capacitor 35. The waveform of the differential signal VG is shown in FIG. 3. Following the rising-edge of the input signal SIN the p-transistor 57 is turned on within the on-time TON. Due to the on-time TON, the speed-up circuit 100 provides a parallel current. The parallel current associates with the current source 92 to charge the parasitic capacitor of the transistor 50. This will accelerate the high-side transistor 10 to be switched on. Thus, the acceleration of switching on the high-side transistor 10 is limited by the turn-on time TON. When the transistor 50 is turned on to switch off the high-side transistor 10, the p-transistor 57 is off. Therefore, the p-transistor 57 will not consume any power while the transistor 50 is turned on. Besides, while the high-side transistor 10 is switched on, the speed-up circuit 100 mostly charges the parasitic capacitor of the transistor 50. This can help to decrease the amplitude of the current drawn from the current source 92. Thus, the stress of the transistor 50 will be reduced and the efficiency of the high-side transistor driver is improved.

The high-side transistor driver according to the present invention overcomes the drawbacks of prior-art high-side transistor drivers. In particular, the high-side transistor driver according to the present invention is suitable for use in high-voltage and high-speed applications. Furthermore, the high-side transistor driver according to the present invention operates more efficiently than prior-art high-side transistor drivers.

It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims or their equivalents.

Claims (14)

1. A driver, comprising:
a high-side transistor;
a low-side transistor coupled to the high-side transistor;
a floating-ground terminal, connected to a source of said high-side transistor;
a floating-supply terminal, for providing a floating voltage for the high-side transistor driver ;
a charge-pump diode, having a cathode connected to said floating-supply terminal, wherein an anode of said charge-pump diode is supplied with a bias voltage;
a bootstrap capacitor, connected in series with said charge-pump diode, wherein a negative terminal of said bootstrap capacitor is connected to said floating-ground terminal, and wherein a positive terminal of said bootstrap capacitor is connected to said floating-supply terminal;
a p-transistor, having a source connected to said floating-supply terminal, ;
an n-transistor, having a source connected to said floating-ground terminal, wherein a gate of said n-transistor is connected to a gate of said p-transistor, wherein a drain of said n-transistor forms a junction with a drain of said p-transistor, and wherein the voltage at said junction drives a gate of said high-side transistor; and
a current sink, connected from the gate of said n-transistor to said floating-ground terminal, for continuously sinking current;
a control p-transistor, having a source connected to said floating-supply terminal, wherein said control p-transistor has a drain coupled to said gate of said n-transistor;
a first current source connected from said floating-supply terminal to a gate of said control p-transistor;
a first diode, having an anode connected to said floating-ground terminal, wherein said first diode has a cathode connected to said gate of said control p-transistor;
an on/off transistor, for switching said control p-transistor, wherein said on/off transistor has a drain connected to said gate of said control p-transistor, wherein a source of said on/off transistor is connected to the ground reference;
a first inverter, having an input supplied with an input signal, wherein said first inverter has an output connected to a gate of said on/off transistor; and
a speed-up circuit, having an output connected to said gate of said control p-transistor, wherein said input signal is supplied to an input of said speed-up circuit, and wherein said speed-up circuit is used for accelerating the charge-up of a parasitic capacitor of the on/off transistor.
2. The driver as claimed in claim 1, wherein said bias voltage charges said bootstrap capacitor whenever said low-side transistor is turned on, wherein said bias voltage supplies said floating voltage at the floating-supply terminal whenever said low-side transistor is turned on.
3. The driver as claimed in claim 1 further comprising:
a control p-transistor, having a source connected to said floating-supply terminal, wherein said control p-transistor has a drain coupled to said gate of said n-transistor;
a first current source connected from said floating-supply terminal to a gate of said control p-transistor;
a first diode, having an anode connected to said floating-ground terminal, wherein said first diode having a cathode connected to said gate of said control p-transistor;
an on/off transistor, for switching said control p-transistor, wherein said on/off transistor has a drain connected to said gate of said control p-transistor, wherein a source of said on/off transistor is connected to the ground reference;
a first inverter, having an input supplied with an input signal, wherein said first inverter has an output connected to a gate of said on/off transistor; and
a speed-up circuit, having an output connected to said gate of said control p-transistor, wherein said input signal is supplied to an input of said speed-up circuit, and wherein said speed-up circuit has a capacitive coupling.
4. The driver as claimed in claim 3 1, wherein said n-transistor is turned on and said high-side transistor is switched off whenever said control p-transistor is turned on.
5. The driver as claimed in claim 3 1, wherein said current sink is utilized to turn on said p-transistor and switch on the high-side transistor whenever said control p-transistor is turned off.
6. The driver as claimed in claim 3 1, wherein said first current source is utilized to charge up a parasitic capacitance of said on/off transistor and turn off said control p-transistor.
7. The driver as claimed in claim 3 1, wherein said on/off transistor is turned off whenever said input signal is high.
8. The driver as claimed in claim 3 1, wherein said speed-up circuit generates a control signal in response to said input signal, and wherein said control signal accelerates the charge-up of a parasitic capacitance of said on/off transistor and accelerates the turn-on of the high-side transistor.
9. The driver according to claim 3 1, wherein said speed-up circuit comprises:
an accelerative p-transistor, having a source connected to said floating-supply terminal, wherein said accelerative p-transistor has a drain connected to said output of said speed-up circuit;
a second current source, connected from said floating-supply terminal to a gate of said accelerative p-transistor;
a second diode, having an anode connected to said floating-ground terminal, wherein said second diode has a cathode connected to said gate of said accelerative p-transistor;
a third diode, connected in series with said second diode, wherein said third diode has a cathode connected to said floating-supply terminal, and wherein said third diode has an anode connected to said gate of said accelerative p-transistor;
a capacitor, for switching said accelerative p-transistor; and
a second inverter, having an input connected to said input of said speed-up circuit, wherein said capacitor is connected from an output of said second inverter to said gate of said accelerative p-transistor.
10. The driver according to claim 9, wherein said accelerative p-transistor charges up a parasitic capacitance of said on/off transistor whenever said accelerative p-transistor is turned on.
11. The driver according to claim 9, wherein said accelerative p-transistor is turned on within a time-constant, wherein the length of the time-constant is proportional to the product of the amplitude of the current from said second current source and the capacitance of said capacitor.
12. A driver, comprising:
a charge-pump diode, supplied with a bias voltage;
a bootstrap capacitor, coupled to said charge-pump diode via a floating supply terminal, wherein a floating voltage is generated across said bootstrap capacitor in response to said bias voltage;
a drive circuit, coupled to said floating supply terminal, a high-side switch, and a floating-ground terminal, said drive circuit generating a switch signal in response to a control signal, for driving said high-side switch;
a speed-up circuit, comprising:
an accelerative switch, coupled to said floating-supply terminal and said output of said speed-up circuit;
a first current source, coupled to said floating-supply terminal and said accelerative switch;
a second diode, coupled to said floating-ground terminal and said accelerative switch;
a third diode, coupled to said second diode, said floating-supply terminal, said first current source, and said accelerative switch; and
a capacitor, for speeding up the turning on of said high-side switch according to said input signal.
13. The driver as claimed in claim 12, wherein said driver further comprising a control circuit, said control circuit coupled to the said charge-pump diode, said floating-ground terminal and said drive circuit, wherein said control circuit generating said control signal in response to an input signal.
14. The driver as claimed in claim 13, said control circuit comprising:
an on/off switch, coupled to a ground reference and said speed-up circuit, wherein said on/off switch generating a on/off signal in response to said input signal;
a second current source, coupled to said floating-supply terminal and said on/off switch;
a fourth diode, coupled to said floating-ground terminal, said second current source, and said on/off switch; and
a control switch, coupled to said second current source and said on/off switch, wherein said control switch generating said control signal in response to said on/off signal,
wherein a parasitic capacitance at a terminal of said on/off switch is charged-up by said speed-up circuit and said second current source.
US11/437,007 2003-09-24 2006-05-17 High-side transistor driver for power converters Active USRE40844E1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/671,272 US6836173B1 (en) 2003-09-24 2003-09-24 High-side transistor driver for power converters
US11/437,007 USRE40844E1 (en) 2003-09-24 2006-05-17 High-side transistor driver for power converters

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/437,007 USRE40844E1 (en) 2003-09-24 2006-05-17 High-side transistor driver for power converters

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/671,272 Reissue US6836173B1 (en) 2003-09-24 2003-09-24 High-side transistor driver for power converters

Publications (1)

Publication Number Publication Date
USRE40844E1 true USRE40844E1 (en) 2009-07-14

Family

ID=33518197

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/671,272 Active US6836173B1 (en) 2003-09-24 2003-09-24 High-side transistor driver for power converters
US11/437,007 Active USRE40844E1 (en) 2003-09-24 2006-05-17 High-side transistor driver for power converters

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US10/671,272 Active US6836173B1 (en) 2003-09-24 2003-09-24 High-side transistor driver for power converters

Country Status (3)

Country Link
US (2) US6836173B1 (en)
CN (1) CN100438283C (en)
WO (1) WO2005029689A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130241601A1 (en) * 2012-03-15 2013-09-19 Tsung-Lin Chen High-side driver circuit
US20150137619A1 (en) * 2013-11-15 2015-05-21 Texas Instruments Incorporated Method and circuitry for controlling a depletion-mode transistor

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4300058B2 (en) * 2003-05-15 2009-07-22 パナソニック株式会社 Voltage generator, charge transfer device, solid-state imaging device, solid-state imaging system, and voltage generation method
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
US6836173B1 (en) * 2003-09-24 2004-12-28 System General Corp. High-side transistor driver for power converters
US7061301B2 (en) 2003-12-19 2006-06-13 Power Integrations, Inc. Method and apparatus switching a semiconductor switch with a multi-state drive circuit
US6975146B1 (en) * 2004-01-02 2005-12-13 Sauer-Danfoss Inc. High side NFET gate driving circuit
US6952120B2 (en) * 2004-02-12 2005-10-04 Texas Instruments Incorporated Versatile system for controlling driver signal timing
US7095246B2 (en) * 2004-08-25 2006-08-22 Freescale Semiconductor, Inc. Variable impedance output buffer
US20060062026A1 (en) * 2004-09-18 2006-03-23 Wittenbreder Ernest H Jr High efficiency power conversion circuits
US6972584B1 (en) * 2004-09-30 2005-12-06 Siemens Milltronics Process Instruments Inc. Power decoupling circuit for loop powered time-of-flight ranging systems
US7224204B2 (en) * 2005-03-08 2007-05-29 Linear Technology Corporation Method and circuit for driving a gate of a MOS transistor negative
US7405595B2 (en) * 2005-11-16 2008-07-29 System General Corp. High-side transistor driver having positive feedback for improving speed and power saving
US8044685B2 (en) * 2006-06-12 2011-10-25 System General Corp. Floating driving circuit
US7732890B2 (en) * 2006-06-28 2010-06-08 System General Corp. Integrated circuit with high voltage junction structure
AT406695T (en) * 2006-07-04 2008-09-15 Infineon Technologies Ag Charge pump and boatstrap capacitor
CN100466256C (en) * 2006-08-07 2009-03-04 崇贸科技股份有限公司 High voltage integrated circuit
US8558349B2 (en) * 2006-08-11 2013-10-15 System General Corp. Integrated circuit for a high-side transistor driver
US20080068049A1 (en) * 2006-09-18 2008-03-20 Alexander George Welti Current-regulated, bootstrapped-biased, high to low impedance signal-buffer/output-driver for audio electronics
DE102006053321B4 (en) * 2006-11-13 2012-02-09 Texas Instruments Deutschland Gmbh Circuit breaker circuit in CMOS technology, particularly suitable for use in a DC-DC converter
US7688052B2 (en) * 2006-12-05 2010-03-30 Semiconductor Components Industries, Llc Charge pump circuit and method therefor
CN101247080B (en) * 2007-02-16 2011-05-11 立锜科技股份有限公司 Circuit for charging bootstrap capacitor of voltage converter
JP4682173B2 (en) * 2007-07-12 2011-05-11 株式会社日立製作所 Voltage-driven semiconductor element drive circuit and inverter device
JP5083546B2 (en) * 2008-01-30 2012-11-28 セイコーエプソン株式会社 Capacitive load drive circuit and liquid ejection device
JP2009178926A (en) * 2008-01-30 2009-08-13 Seiko Epson Corp Capacitive load driving circuit and liquid discharging apparatus
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
EP2311184A4 (en) 2008-07-18 2014-02-26 Peregrine Semiconductor Corp Low-noise high efficiency bias generation circuits and method
NZ596253A (en) 2009-05-11 2014-02-28 Power Integrations Inc Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor jfets
US9264053B2 (en) 2011-01-18 2016-02-16 Peregrine Semiconductor Corporation Variable frequency charge pump
EP2426820B1 (en) * 2010-09-07 2013-09-04 Dialog Semiconductor GmbH Circuit controlling HS-NMOS power switches with slew-rate limitation
US8258852B2 (en) * 2010-11-18 2012-09-04 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Bootstrapped high-side driver control without static DC current for driving a motor bridge circuit
CN102130643A (en) * 2010-12-27 2011-07-20 东南大学 Capacitor bootstrap drive circuit and method of switched reluctance motor
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US8531210B2 (en) * 2011-08-30 2013-09-10 System General Corporation Monolithic high-side switch control circuits
US9678139B2 (en) * 2011-12-22 2017-06-13 Continental Automotive Systems, Inc. Method and apparatus for high side transistor protection
CN103187856B (en) * 2011-12-31 2015-08-19 意法半导体研发(深圳)有限公司 A kind of method of high side drive circuit and operation drive circuit
CN103543396B (en) * 2012-07-13 2016-03-30 中芯国际集成电路制造(上海)有限公司 A kind of proving installation for high-k/metal gate nmos pass transistor and method of testing
TWI485410B (en) * 2012-12-03 2015-05-21 Anpec Electronics Corp Bootstrap capacitor detecting circuit and bootstrap dc-dc converter thereof
US9454500B2 (en) * 2013-06-17 2016-09-27 Nxp B.V. Network communication control apparatus, system and method
TWI499177B (en) * 2013-10-17 2015-09-01 Richtek Technology Corp Control circuit and related capacitor charging circuit of power converter
US9401642B2 (en) * 2014-11-20 2016-07-26 Sanken Electric Co., Ltd. Switching power-supply device
US10504769B2 (en) 2014-12-09 2019-12-10 Infineon Technologies Austria Ag Regulated high side gate driver circuit for power transistors
US9634655B2 (en) * 2015-02-24 2017-04-25 Panasonic Corporation Drive device having first and second switching devices with different gate widths
US10404251B2 (en) * 2016-05-04 2019-09-03 The Hong Kong University Of Science And Technology Power device with integrated gate driver
CN106921284B (en) * 2017-05-05 2018-12-11 电子科技大学 A kind of MOSFET floating driving circuit

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381044A (en) * 1991-07-24 1995-01-10 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Bootstrap circuit for driving a power MOS transistor
US5559452A (en) * 1994-04-13 1996-09-24 Fujitsu Limited N channel output driver with boosted gate voltage
US5638025A (en) * 1995-07-07 1997-06-10 National Semiconductor Corporation Amplified output stage containing N-channel output transistors and capacitive coupling stage
US5672992A (en) * 1995-04-11 1997-09-30 International Rectifier Corporation Charge pump circuit for high side switch
US5742196A (en) * 1995-04-10 1998-04-21 U.S. Philips Corporation Level-shifting circuit and high-side driver including such a level-shifting circuit
US5877635A (en) * 1997-03-07 1999-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Full-swing buffer circuit with charge pump
US5910738A (en) * 1995-04-07 1999-06-08 Kabushiki Kaisha Toshiba Driving circuit for driving a semiconductor device at high speed and method of operating the same
US5952865A (en) * 1996-02-12 1999-09-14 Stmicroelectronics, S.R.L. Voltage translator circuit
US6037720A (en) * 1998-10-23 2000-03-14 Philips Electronics North America Corporation Level shifter
US6100744A (en) * 1997-09-04 2000-08-08 Samsung Electronics Co., Ltd. Integrated circuit devices having improved internal voltage generators which reduce timing skew in buffer circuits therein
US6344959B1 (en) * 1998-05-01 2002-02-05 Unitrode Corporation Method for sensing the output voltage of a charge pump circuit without applying a load to the output stage
US6353345B1 (en) * 2000-04-04 2002-03-05 Philips Electronics North America Corporation Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS
US6836173B1 (en) * 2003-09-24 2004-12-28 System General Corp. High-side transistor driver for power converters

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545955A (en) * 1994-03-04 1996-08-13 International Rectifier Corporation MOS gate driver for ballast circuits
SG66453A1 (en) * 1997-04-23 1999-07-20 Int Rectifier Corp Resistor in series with bootstrap diode for monolithic gate device
DE10127868A1 (en) * 2001-06-08 2003-02-20 Grundfos As Bootstrap power supply

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381044A (en) * 1991-07-24 1995-01-10 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Bootstrap circuit for driving a power MOS transistor
US5559452A (en) * 1994-04-13 1996-09-24 Fujitsu Limited N channel output driver with boosted gate voltage
US5910738A (en) * 1995-04-07 1999-06-08 Kabushiki Kaisha Toshiba Driving circuit for driving a semiconductor device at high speed and method of operating the same
US5742196A (en) * 1995-04-10 1998-04-21 U.S. Philips Corporation Level-shifting circuit and high-side driver including such a level-shifting circuit
US5672992A (en) * 1995-04-11 1997-09-30 International Rectifier Corporation Charge pump circuit for high side switch
US5638025A (en) * 1995-07-07 1997-06-10 National Semiconductor Corporation Amplified output stage containing N-channel output transistors and capacitive coupling stage
US5952865A (en) * 1996-02-12 1999-09-14 Stmicroelectronics, S.R.L. Voltage translator circuit
US5877635A (en) * 1997-03-07 1999-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Full-swing buffer circuit with charge pump
US6100744A (en) * 1997-09-04 2000-08-08 Samsung Electronics Co., Ltd. Integrated circuit devices having improved internal voltage generators which reduce timing skew in buffer circuits therein
US6344959B1 (en) * 1998-05-01 2002-02-05 Unitrode Corporation Method for sensing the output voltage of a charge pump circuit without applying a load to the output stage
US6037720A (en) * 1998-10-23 2000-03-14 Philips Electronics North America Corporation Level shifter
US6353345B1 (en) * 2000-04-04 2002-03-05 Philips Electronics North America Corporation Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS
US6836173B1 (en) * 2003-09-24 2004-12-28 System General Corp. High-side transistor driver for power converters

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130241601A1 (en) * 2012-03-15 2013-09-19 Tsung-Lin Chen High-side driver circuit
US8581638B2 (en) * 2012-03-15 2013-11-12 National Chiao Tung University High-side driver circuit
US20150137619A1 (en) * 2013-11-15 2015-05-21 Texas Instruments Incorporated Method and circuitry for controlling a depletion-mode transistor
US9762230B2 (en) * 2013-11-15 2017-09-12 Texas Instruments Incorporated Method and circuitry for controlling a depletion-mode transistor

Also Published As

Publication number Publication date
CN100438283C (en) 2008-11-26
CN1849740A (en) 2006-10-18
WO2005029689A1 (en) 2005-03-31
US6836173B1 (en) 2004-12-28

Similar Documents

Publication Publication Date Title
CN103683864B (en) For driving the circuit arrangement of the transistor in bridge circuit
US8487602B2 (en) Switch driving circuit and driving method thereof
US5426334A (en) Micropower gate charge pump for power MOSFETS
US6650169B2 (en) Gate driver apparatus having an energy recovering circuit
JP3117696B2 (en) Electronic circuit
US7233191B2 (en) JFET driver circuit and JFET driving method
US7142202B2 (en) Driving circuit and display device
US6538481B1 (en) Driving control device, power converting device, method of controlling power converting device and method of using power converting device
JP3415241B2 (en) Voltage converter
KR100965686B1 (en) Level shift circuit and power supply device
US7135910B2 (en) Charge pump with fibonacci number multiplication
JP4742828B2 (en) Voltage-driven switching circuit
EP0563580B1 (en) Drive circuit for semiconductor light-emitting device
CN1158761C (en) Level shifter
DE112008001273B4 (en) Control scheme for depletion elements in buck converters
EP0812488B1 (en) Integrated driver for half-bridge circuit
US8295784B2 (en) Semiconductor switching device
US5373435A (en) High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
US6744224B2 (en) Rush current limiting circuit for a PFM control charge pump
US20110241738A1 (en) Switching device driving unit and semiconductor apparatus
CN108270346B (en) Power circuit and drive circuit
KR101173923B1 (en) Electronic element driving circuit
EP0039952B1 (en) Switch comprising a mis-fet operated as a source follower
JP4830218B2 (en) Drive signal supply circuit
US5198699A (en) Capacitor-driven signal transmission circuit

Legal Events

Date Code Title Description
FPAY Fee payment

Year of fee payment: 8

REMI Maintenance fee reminder mailed
SULP Surcharge for late payment

Year of fee payment: 11

FPAY Fee payment

Year of fee payment: 12

AS Assignment

Owner name: SYSTEM GENERAL CORP., TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:YANG, TA-YUNG;REEL/FRAME:041399/0740

Effective date: 20030905

AS Assignment

Owner name: FAIRCHILD (TAIWAN) CORPORATION, TAIWAN

Free format text: CHANGE OF NAME;ASSIGNOR:SYSTEM GENERAL CORPORATION;REEL/FRAME:042068/0929

Effective date: 20140620

AS Assignment

Owner name: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, ARIZONA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FAIRCHILD (TAIWAN) CORPORATION (FORMERLY SYSTEM GENERAL CORPORATION);REEL/FRAME:042328/0318

Effective date: 20161221

AS Assignment

Owner name: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT, NEW YORK

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC;REEL/FRAME:046410/0933

Effective date: 20170210

Owner name: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AG

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC;REEL/FRAME:046410/0933

Effective date: 20170210