CN117385343A - 一种提高工艺节拍的方法 - Google Patents
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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Abstract
本发明公开了一种提高工艺节拍的方法,其特征在于,包括:步骤一,提供进片室,所述进片室后端连接加热室,所述加热室后端连接第一工艺室,所述第一工艺室后端连接缓冲室,所述缓冲室后端连接第二工艺室,所述第二工艺室后端连接冷却室,所述冷却室后端连接出片室;步骤二,通过对所述加热室,缓冲室,冷却室各设置气管,控制保持各真空腔室压力均衡;步骤三,将托盘和衬底在各真空腔室间传输,传输到对应工艺室后直接镀膜。本发明的优点是:工艺室不用重新稳压,减少节拍时间。
Description
技术领域
本发明涉及PECVD技术领域,具体涉及一种提高工艺节拍的方法。
背景技术
PECVD设备是由一连串的不同功能的真空室组成。包括进片室,加热室,工艺室,缓冲室,工艺室,冷却室,出片室。各个真空室间都有大型门阀隔断,各个真空室有自己的真空泵维持其内部真空度。
PECVD真空设备整个工艺流程如下:托盘从进片室进入加热室加热,再进入工艺室做镀膜工艺,经过缓冲室,再下一个工艺室再做镀膜工艺,最后通过冷却室冷却,经过出片室出来。每个真空室都配备单独的自己的真空泵维持真空度,本底真空能到5Pa左右,在工艺室镀膜时,需要持续通入特殊的混合气体,同时真空泵持续抽真空,通过蝶阀控制排气速度,最终把压力维持到100Pa左右,在一定的温度下,才可以进行镀膜工艺。由于各个真空室之间的压差,托盘和衬底在传输过程中需要进行气体交换,使得工艺室需要重新稳压,从而增加了节拍时间。
发明内容
本发明提出了一种提高工艺节拍的方法,解决上述现有技术存在的技术问题。
根据本发明的一个方面,提供了一种提高工艺节拍的方法,其特征在于,包括:步骤一,提供进片室,所述进片室后端连接加热室,所述加热室后端连接第一工艺室,所述第一工艺室后端连接缓冲室,所述缓冲室后端连接第二工艺室,所述第二工艺室后端连接冷却室,所述冷却室后端连接出片室;步骤二,通过对所述加热室,缓冲室,冷却室各设置气管,控制保持各真空腔室压力均衡;步骤三,将托盘和衬底在各真空腔室间传输,传输到对应工艺室后直接镀膜。
进一步地,还包括在真空管路上设置蝶阀。
进一步地,还包括设置气路柜,所述加热室,缓冲室,冷却室通过所述气路柜持续通气给真空腔室。
进一步地,对所述加热室,缓冲室,冷却室各设置一路气管。
由上述本发明提供的技术方案可以看出,采用本发明,给加热室,缓冲室,冷却室增加1路气管,并在真空管路上增加蝶阀,通过控制压力,托盘和衬底在各个真空室件传输时,开闭门阀各个腔室之间不会有压差变化,传输到工艺室后可以直接做镀膜工艺,由于减少各个真空室之间的压差,在托盘和衬底传输过程中没有气体交换,工艺室不用重新稳压,减少节拍时间。
上述说明仅是本发明技术的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其它目的、特征和优点能够更明显易懂,以下特举本发明的具体实施方式。
附图说明
通过阅读下文优选实施方式的详细描述,各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的,而并不认为是对本发明的限制。而且在整个附图中,用相同的参考符号表示相同的部件。
图1为本发明的提高工艺节拍的方法的实施例示意图。
在附图中,1—进片室,2—加热室,3—第一工艺室,4—缓冲室,5—第二工艺室,6—冷却室,7—出片室,8—门阀,9—气路柜,10—真空泵,11—蝶阀,12—气管。
具体实施方式
下面将参照附图更详细地描述本发明的示例性实施例。虽然附图中显示了本发明的示例性实施例,然而应当理解,可以以各种形式实现本发明而不应被这里阐述的实施例所限制。相反,提供这些实施例是为了能够更透彻地理解本发明,并且能够将本发明的范围完整的传达给本领域的技术人员。
下面对本发明所提供的一种提高工艺节拍的方法进行详细描述。本发明实施例中未作详细描述的内容属于本领域专业技术人员公知的现有技术。本发明实施例中未注明具体条件者,按照本领域常规条件或制造商建议的条件进行。
参见图1,本发明的一种提高工艺节拍的方法,包括:步骤一,提供进片室,所述进片室后端连接加热室,所述加热室后端连接第一工艺室,所述第一工艺室后端连接缓冲室,所述缓冲室后端连接第二工艺室,所述第二工艺室后端连接冷却室,所述冷却室后端连接出片室;步骤二,通过对所述加热室,缓冲室,冷却室各设置气管,控制保持各真空腔室压力均衡;步骤三,将托盘和衬底在各真空腔室间传输,传输到对应工艺室后直接镀膜。
作为具体的实施例,托盘和衬底从进片室1到加热室2,加热过程中加热室真空泵10持续抽真空,加热室真空度最终维持在5Pa左右,同时第一工艺室3在做镀膜工艺,其真空度在100Pa左右,缓冲室4真空泵持续抽真空,真空度维持在5Pa左右。
作为具体的实施例,当第一工艺室镀膜完成后,开启第一工艺室和缓冲室4之间的门阀8,完成第一工艺室镀膜的托盘和衬底会传入缓冲室4,第一工艺室3和缓冲室4相通,100Pa的第一工艺室内的气体会进入5Pa的缓冲室,两个真空室内会分压,第一工艺室的压力会达到50Pa左右,关闭门阀。
作为具体的实施例,之后加热室和第一工艺室3之间的阀门打开,后一个托盘和衬底传入第一工艺室3,加热室和第一工艺室3相通,50Pa的第一工艺室3内的气体会进入5Pa的加热室,两个真空室会分压,第一工艺室3的压力会到25Pa左右,关闭门阀。
作为具体的实施例,第一工艺室3使用真空泵通过控制抽气管道上的蝶阀11,使工艺室25Pa的压力重新升高到100Pa,这样会增加了一个维持镀膜工艺压力的时间,增加的节拍时间,减少设备的工作效率。
同样的,第二工艺室5完成镀膜工艺,托盘和衬底传入冷却室6,后一个托盘和衬底从缓冲室4传入工艺室2,也会同样的增加了一个维持镀膜工艺压力的时间。
本发明的创新之处是在加热室,缓冲室,冷却室各增加1路气管12,并在所在腔室抽真空管道上增加蝶阀来控制真空室内压力。
设备运行时,加热室,缓冲室,冷却室通过气路柜持续通气给真空室,同时通过真空管道上的蝶阀控制压力,维持到100Pa。
当第一工艺室3镀膜完成后,开启第一工艺室3和缓冲室4之间的门阀,完成第一工艺室3镀膜的托盘和衬底会传入缓冲室4,第一工艺室3和缓冲室4相通,100Pa的第一工艺室3内的气体不会与100Pa的缓冲室4分压,第一工艺室3的压力还是100Pa左右,关闭门阀。
之后加热室2和第一工艺室3之间的阀门打开,后一个托盘和衬底传入第一工艺室3,加热室2和第一工艺室3相通,100Pa的第一工艺室3内的气体不会与100Pa的加热室2气体分压,第一工艺室3的压力还是100Pa左右,关闭门阀。
这样后一个托盘和衬底就可以在第一工艺室3直接做工艺了,缩短了设备的节拍时间。
同样的,第二工艺室5完成镀膜工艺,托盘和衬底传入冷却室6,后一个托盘和衬底从缓冲室4传入第二工艺室5,也不需要单独维持100Pa的压力。
采用本发明,给加热室,缓冲室,冷却室增加1路气管,减少成本能够达到最佳效果,同时在真空管路上增加蝶阀,通过控制压力,托盘和衬底在各个真空室件传输时,开闭门阀各个腔室之间不会有压差变化,传输到工艺室后可以直接做镀膜工艺,减少节拍时间。
需要明确的是,本发明并不局限于上文所描述并在图中示出的特定配置和处理。为了简明起见,这里省略了对已知方法的详细描述。在上述实施例中,描述和示出了若干具体的步骤作为示例。但是,本发明的方法过程并不限于所描述和示出的具体步骤,本领域的技术人员可以在领会本发明的精神后,作出各种改变、修改和添加,或者改变步骤之间的顺序。
Claims (4)
1.一种提高工艺节拍的方法,其特征在于,包括:步骤一,提供进片室,所述进片室后端连接加热室,所述加热室后端连接第一工艺室,所述第一工艺室后端连接缓冲室,所述缓冲室后端连接第二工艺室,所述第二工艺室后端连接冷却室,所述冷却室后端连接出片室;步骤二,通过对所述加热室,缓冲室,冷却室各设置气管,控制保持各真空腔室压力均衡;步骤三,将托盘和衬底在各真空腔室间传输,传输到对应工艺室后直接镀膜。
2.根据权利要求1所述的提高工艺节拍的方法,其特征在于,还包括在真空管路上设置蝶阀。
3.根据权利要求1所述的提高工艺节拍的方法,其特征在于,还包括安装气路柜,所述加热室,缓冲室,冷却室通过气路柜持续通气给真空腔室。
4.根据权利要求1所述的提高工艺节拍的方法,其特征在于,对所述加热室,缓冲室,冷却室各设置一路气管。
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