CN117321412A - 用于将电子束聚焦在具有透明基板的晶圆上的方法 - Google Patents

用于将电子束聚焦在具有透明基板的晶圆上的方法 Download PDF

Info

Publication number
CN117321412A
CN117321412A CN202280012506.7A CN202280012506A CN117321412A CN 117321412 A CN117321412 A CN 117321412A CN 202280012506 A CN202280012506 A CN 202280012506A CN 117321412 A CN117321412 A CN 117321412A
Authority
CN
China
Prior art keywords
wafer
height
regions
electron beam
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280012506.7A
Other languages
English (en)
Chinese (zh)
Inventor
阿里·巴德
塔米尔·努纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Israel Ltd
Original Assignee
Applied Materials Israel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Israel Ltd filed Critical Applied Materials Israel Ltd
Publication of CN117321412A publication Critical patent/CN117321412A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/633—Specific applications or type of materials thickness, density, surface weight (unit area)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • G01N2223/6462—Specific applications or type of materials flaws, defects microdefects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/66—Specific applications or type of materials multiple steps inspection, e.g. coarse/fine
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H01J2237/216—Automatic focusing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN202280012506.7A 2021-02-01 2022-02-01 用于将电子束聚焦在具有透明基板的晶圆上的方法 Pending CN117321412A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/164,803 2021-02-01
US17/164,803 US11378531B1 (en) 2021-02-01 2021-02-01 Method for focusing an electron beam on a wafer having a transparent substrate
PCT/US2022/014669 WO2022165400A1 (en) 2021-02-01 2022-02-01 A method for focusing an electron beam on a wafer having a transparent substrate

Publications (1)

Publication Number Publication Date
CN117321412A true CN117321412A (zh) 2023-12-29

Family

ID=82261422

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280012506.7A Pending CN117321412A (zh) 2021-02-01 2022-02-01 用于将电子束聚焦在具有透明基板的晶圆上的方法

Country Status (7)

Country Link
US (1) US11378531B1 (https=)
EP (1) EP4285114A4 (https=)
JP (1) JP7697017B2 (https=)
KR (1) KR20230166073A (https=)
CN (1) CN117321412A (https=)
TW (1) TWI894429B (https=)
WO (1) WO2022165400A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11250847A (ja) * 1998-02-27 1999-09-17 Hitachi Ltd 収束荷電粒子線装置およびそれを用いた検査方法
US20030020891A1 (en) * 2001-07-26 2003-01-30 Canon Kabushiki Kaisha Substrate holding apparatus and exposure apparatus using the same
KR20040012404A (ko) * 2002-08-03 2004-02-11 삼성전자주식회사 웨이퍼의 이면을 검사하는 장비에 채용되는 웨이퍼 지지체
US20080078933A1 (en) * 1997-08-11 2008-04-03 Masahiro Watanabe Electron Beam Exposure or System Inspection Or Measurement Apparatus And Its Method And Height Detection Apparatus
CN101499433A (zh) * 2007-11-05 2009-08-05 以色列商·应用材料以色列公司 用于电测试半导体晶片的系统和方法
JP2010080144A (ja) * 2008-09-25 2010-04-08 Lasertec Corp 複合型顕微鏡装置及び試料観察方法
TW201140640A (en) * 2010-04-21 2011-11-16 Hermes Microvision Inc Dynamic focus adjustment with optical height detection apparatus in electron beam system
TW201721087A (zh) * 2015-09-21 2017-06-16 克萊譚克公司 增加用於檢測和度量之高度感測器之動態範圍

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07113548B2 (ja) * 1986-06-19 1995-12-06 株式会社ニコン 表面変位検出装置
JPH0444210A (ja) * 1990-06-07 1992-02-14 Canon Inc ガラスウェーハー及び該ガラスウェーハーの面位置検出方法
JP3180229B2 (ja) * 1992-03-31 2001-06-25 キヤノン株式会社 自動焦点合わせ装置
JP3101539B2 (ja) * 1994-06-24 2000-10-23 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 電子線ナノメトロジー・システム
JP3630624B2 (ja) 2000-09-18 2005-03-16 株式会社日立製作所 欠陥検査装置および欠陥検査方法
JP2003037157A (ja) 2001-07-26 2003-02-07 Canon Inc 基板保持装置、露光装置、デバイス製造方法、半導体製造工場および半導体製造装置の保守方法
US6670610B2 (en) 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
EP1431825A1 (en) 2002-12-20 2004-06-23 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and substrate holder
JP4734101B2 (ja) * 2005-11-30 2011-07-27 株式会社ディスコ レーザー加工装置
US8709269B2 (en) 2007-08-22 2014-04-29 Applied Materials Israel, Ltd. Method and system for imaging a cross section of a specimen
JP5117920B2 (ja) * 2008-04-28 2013-01-16 株式会社ディスコ レーザー加工装置
US20090309022A1 (en) 2008-06-12 2009-12-17 Hitachi High-Technologies Corporation Apparatus for inspecting a substrate, a method of inspecting a substrate, a scanning electron microscope, and a method of producing an image using a scanning electron microscope
JP2011122894A (ja) * 2009-12-09 2011-06-23 Disco Abrasive Syst Ltd チャックテーブルに保持された被加工物の計測装置およびレーザー加工機
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
NL2018857B1 (en) * 2017-05-05 2018-11-09 Illumina Inc Systems and methods for improved focus tracking using a light source configuration
CN110770653B (zh) 2017-06-08 2024-05-03 Asml荷兰有限公司 用于测量对准的系统和方法
JP7189026B2 (ja) * 2019-01-07 2022-12-13 株式会社ディスコ 被加工物の加工方法
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080078933A1 (en) * 1997-08-11 2008-04-03 Masahiro Watanabe Electron Beam Exposure or System Inspection Or Measurement Apparatus And Its Method And Height Detection Apparatus
JPH11250847A (ja) * 1998-02-27 1999-09-17 Hitachi Ltd 収束荷電粒子線装置およびそれを用いた検査方法
US20030020891A1 (en) * 2001-07-26 2003-01-30 Canon Kabushiki Kaisha Substrate holding apparatus and exposure apparatus using the same
KR20040012404A (ko) * 2002-08-03 2004-02-11 삼성전자주식회사 웨이퍼의 이면을 검사하는 장비에 채용되는 웨이퍼 지지체
CN101499433A (zh) * 2007-11-05 2009-08-05 以色列商·应用材料以色列公司 用于电测试半导体晶片的系统和方法
JP2010080144A (ja) * 2008-09-25 2010-04-08 Lasertec Corp 複合型顕微鏡装置及び試料観察方法
TW201140640A (en) * 2010-04-21 2011-11-16 Hermes Microvision Inc Dynamic focus adjustment with optical height detection apparatus in electron beam system
TW201721087A (zh) * 2015-09-21 2017-06-16 克萊譚克公司 增加用於檢測和度量之高度感測器之動態範圍

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
沈春龙 等: ""高能电子束活性区空间能量密度测量系统"", 《焊接学报》, no. 10, 25 October 2017 (2017-10-25) *

Also Published As

Publication number Publication date
WO2022165400A1 (en) 2022-08-04
JP7697017B2 (ja) 2025-06-23
US11378531B1 (en) 2022-07-05
TW202249088A (zh) 2022-12-16
EP4285114A4 (en) 2025-07-09
JP2024507705A (ja) 2024-02-21
TWI894429B (zh) 2025-08-21
KR20230166073A (ko) 2023-12-06
EP4285114A1 (en) 2023-12-06

Similar Documents

Publication Publication Date Title
US6172349B1 (en) Autofocusing apparatus and method for high resolution microscope system
US7436507B2 (en) Method and apparatus for inspecting a pattern
US6621571B1 (en) Method and apparatus for inspecting defects in a patterned specimen
US20100014075A1 (en) Method and Apparatus for Inspecting Defects
JP2016008941A (ja) 欠陥観察方法及びその装置並びに欠陥検出装置
GB1493861A (en) Method and apparatus for detecting defects in photomasks
JP2007248086A (ja) 欠陥検査装置
WO1996012981A1 (en) Autofocusing apparatus and method for high resolution microscope system
CN112229857A (zh) 半导体检测装置及检测方法
CN111879782A (zh) 检测装置及检测方法
JP5112650B2 (ja) チャックに対する光ビームの位置のドリフトを決定する方法およびシステム
JP5278783B1 (ja) 欠陥検査装置、欠陥検査方法、及び欠陥検査プログラム
JP2017009514A (ja) 突起検査装置及びバンプ検査装置
US20090316981A1 (en) Method and device for inspecting a disk-shaped object
JP4325909B2 (ja) 欠陥検査装置、欠陥検査方法、光学式走査装置、半導体デバイス製造方法
CN111398295B (zh) 一种缺陷检测装置及其方法
JP2002228421A (ja) 走査型レーザ顕微鏡
CN117321412A (zh) 用于将电子束聚焦在具有透明基板的晶圆上的方法
JP5046054B2 (ja) 欠陥検査装置、欠陥検査方法、光学式走査装置、半導体デバイス製造方法
JP2025064153A (ja) 画像処理装置、検査装置、画像処理方法及び検査方法
JP4313322B2 (ja) 欠陥粒子測定装置および欠陥粒子測定方法
CN111855662B (zh) 一种晶圆缺陷检测装置及方法
JP2019219295A (ja) ウエハ検査装置およびウエハ検査方法
TWI686673B (zh) 檢查方法
US7457454B1 (en) Detailed grey scale inspection method and apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination