KR20230166073A - 투명 기판을 갖는 웨이퍼 상에 전자 빔을 집속하기 위한 방법 - Google Patents

투명 기판을 갖는 웨이퍼 상에 전자 빔을 집속하기 위한 방법 Download PDF

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Publication number
KR20230166073A
KR20230166073A KR1020237028974A KR20237028974A KR20230166073A KR 20230166073 A KR20230166073 A KR 20230166073A KR 1020237028974 A KR1020237028974 A KR 1020237028974A KR 20237028974 A KR20237028974 A KR 20237028974A KR 20230166073 A KR20230166073 A KR 20230166073A
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KR
South Korea
Prior art keywords
wafer
height
chuck
electron beam
evaluation area
Prior art date
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Pending
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KR1020237028974A
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English (en)
Korean (ko)
Inventor
아리 베이더
타미르 누나
Original Assignee
어플라이드 머티리얼즈 이스라엘 리미티드
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Publication of KR20230166073A publication Critical patent/KR20230166073A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/633—Specific applications or type of materials thickness, density, surface weight (unit area)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • G01N2223/6462—Specific applications or type of materials flaws, defects microdefects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/66—Specific applications or type of materials multiple steps inspection, e.g. coarse/fine
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H01J2237/216—Automatic focusing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020237028974A 2021-02-01 2022-02-01 투명 기판을 갖는 웨이퍼 상에 전자 빔을 집속하기 위한 방법 Pending KR20230166073A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/164,803 2021-02-01
US17/164,803 US11378531B1 (en) 2021-02-01 2021-02-01 Method for focusing an electron beam on a wafer having a transparent substrate
PCT/US2022/014669 WO2022165400A1 (en) 2021-02-01 2022-02-01 A method for focusing an electron beam on a wafer having a transparent substrate

Publications (1)

Publication Number Publication Date
KR20230166073A true KR20230166073A (ko) 2023-12-06

Family

ID=82261422

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237028974A Pending KR20230166073A (ko) 2021-02-01 2022-02-01 투명 기판을 갖는 웨이퍼 상에 전자 빔을 집속하기 위한 방법

Country Status (7)

Country Link
US (1) US11378531B1 (https=)
EP (1) EP4285114A4 (https=)
JP (1) JP7697017B2 (https=)
KR (1) KR20230166073A (https=)
CN (1) CN117321412A (https=)
TW (1) TWI894429B (https=)
WO (1) WO2022165400A1 (https=)

Family Cites Families (26)

* Cited by examiner, † Cited by third party
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JPH07113548B2 (ja) * 1986-06-19 1995-12-06 株式会社ニコン 表面変位検出装置
JPH0444210A (ja) * 1990-06-07 1992-02-14 Canon Inc ガラスウェーハー及び該ガラスウェーハーの面位置検出方法
JP3180229B2 (ja) * 1992-03-31 2001-06-25 キヤノン株式会社 自動焦点合わせ装置
JP3101539B2 (ja) * 1994-06-24 2000-10-23 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 電子線ナノメトロジー・システム
JPH11250847A (ja) * 1998-02-27 1999-09-17 Hitachi Ltd 収束荷電粒子線装置およびそれを用いた検査方法
US6107637A (en) 1997-08-11 2000-08-22 Hitachi, Ltd. Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus
JP3630624B2 (ja) 2000-09-18 2005-03-16 株式会社日立製作所 欠陥検査装置および欠陥検査方法
DE60217587D1 (de) 2001-07-26 2007-03-08 Canon Kk Substrathalter und ein Belichtungsapparat
JP2003037157A (ja) 2001-07-26 2003-02-07 Canon Inc 基板保持装置、露光装置、デバイス製造方法、半導体製造工場および半導体製造装置の保守方法
US6670610B2 (en) 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
KR20040012404A (ko) * 2002-08-03 2004-02-11 삼성전자주식회사 웨이퍼의 이면을 검사하는 장비에 채용되는 웨이퍼 지지체
EP1431825A1 (en) 2002-12-20 2004-06-23 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and substrate holder
JP4734101B2 (ja) * 2005-11-30 2011-07-27 株式会社ディスコ レーザー加工装置
US8709269B2 (en) 2007-08-22 2014-04-29 Applied Materials Israel, Ltd. Method and system for imaging a cross section of a specimen
US7994476B2 (en) * 2007-11-05 2011-08-09 Applied Materials Israel, Ltd. Apparatus and method for enhancing voltage contrast of a wafer
JP5117920B2 (ja) * 2008-04-28 2013-01-16 株式会社ディスコ レーザー加工装置
US20090309022A1 (en) 2008-06-12 2009-12-17 Hitachi High-Technologies Corporation Apparatus for inspecting a substrate, a method of inspecting a substrate, a scanning electron microscope, and a method of producing an image using a scanning electron microscope
JP2010080144A (ja) * 2008-09-25 2010-04-08 Lasertec Corp 複合型顕微鏡装置及び試料観察方法
JP2011122894A (ja) * 2009-12-09 2011-06-23 Disco Abrasive Syst Ltd チャックテーブルに保持された被加工物の計測装置およびレーザー加工機
US8791414B2 (en) * 2010-04-21 2014-07-29 Hermes Microvision, Inc. Dynamic focus adjustment with optical height detection apparatus in electron beam system
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
US9958257B2 (en) * 2015-09-21 2018-05-01 Kla-Tencor Corporation Increasing dynamic range of a height sensor for inspection and metrology
NL2018857B1 (en) * 2017-05-05 2018-11-09 Illumina Inc Systems and methods for improved focus tracking using a light source configuration
CN110770653B (zh) 2017-06-08 2024-05-03 Asml荷兰有限公司 用于测量对准的系统和方法
JP7189026B2 (ja) * 2019-01-07 2022-12-13 株式会社ディスコ 被加工物の加工方法
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske

Also Published As

Publication number Publication date
WO2022165400A1 (en) 2022-08-04
JP7697017B2 (ja) 2025-06-23
US11378531B1 (en) 2022-07-05
TW202249088A (zh) 2022-12-16
EP4285114A4 (en) 2025-07-09
JP2024507705A (ja) 2024-02-21
TWI894429B (zh) 2025-08-21
CN117321412A (zh) 2023-12-29
EP4285114A1 (en) 2023-12-06

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Patent event date: 20230825

Patent event code: PA01051R01D

Comment text: International Patent Application

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PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20241105

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