CN117320519A - Perovskite type JBS diode and preparation method thereof - Google Patents
Perovskite type JBS diode and preparation method thereof Download PDFInfo
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- CN117320519A CN117320519A CN202310405935.7A CN202310405935A CN117320519A CN 117320519 A CN117320519 A CN 117320519A CN 202310405935 A CN202310405935 A CN 202310405935A CN 117320519 A CN117320519 A CN 117320519A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000004528 spin coating Methods 0.000 claims abstract description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 6
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000003892 spreading Methods 0.000 claims abstract description 4
- 230000007480 spreading Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 9
- UPHCENSIMPJEIS-UHFFFAOYSA-N 2-phenylethylazanium;iodide Chemical compound [I-].[NH3+]CCC1=CC=CC=C1 UPHCENSIMPJEIS-UHFFFAOYSA-N 0.000 claims description 8
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract description 2
- 239000003292 glue Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/20—Organic diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a perovskite type JBS diode and a preparation method thereof, comprising the following steps: s1, at first in N + Formation of N on a substrate by MOCVD epitaxial growth ‑ An epitaxial layer; s2, N is carried out by PECVD ‑ Growing a mask layer on the epitaxial layer, spreading, photoetching and exposing with mask plate, and coating with N ‑ Two groove patterns are obtained on the epitaxial layer and used for etching the P-type material groove; s3, performing ICP etching on the device to etch two grooves; s4, directly placing the device into X for removing residual SiO 2 Obtaining N of groove type ‑ An epitaxial layer; s5, N of groove type at the moment of the device ‑ Spin-on position of epitaxial layerThen, masking and exposing are carried out; s6, preparing P-type Perovskite (PEA) 2 SnI 4 Is a solution of (a) and (b). Compared with the prior art, the invention has the advantages that: the invention creatively replaces the ion-implanted P-type material with the spin coating and annealing of perovskite, and the design greatly saves the production cost and time and improves the efficiency of the process.
Description
Technical Field
The invention belongs to the technical field of perovskite type JBS, and particularly relates to a perovskite type JBS diode and a preparation method thereof.
Background
In recent years, silicon carbide (SiC), which is a third generation semiconductor material, has been widely used in high-voltage and high-frequency scenes because of its advantages of large forbidden bandwidth, high breakdown electric field, high thermal conductivity, high electron saturation rate, strong radiation resistance, and the like. But with the consequent need for rectifiers with smaller turn-on voltages, larger turn-on currents and higher switching speeds. The JBS (junction barrier schottky ) diode is a device with the advantages of a pin diode and a Schottky diode, has forward characteristics similar to those of the Schottky diode, and has the advantages of small starting voltage, large on-current and high switching speed; the reverse characteristic is more similar to a pin diode, has the advantages of low leakage current and high breakdown voltage, is widely applied to a high-power high-voltage environment of SiC, and can fully exert the advantages of the SiC device;
in the current technology, in order to manufacture a conventional JBS device, we generally need to use Metal Organic Chemical Vapor Deposition (MOCVD), ion implantation, and other methods to manufacture the device. After comprehensively considering the cost and the service condition of equipment, the method is found to have the problems of low deposition rate, low efficiency and high cost, and the process chamber of the equipment needs to be cleaned and maintained after a period of use, so that the method is low in efficiency and high in cost. Therefore, finding a suitable method, reducing the cost and improving the efficiency is particularly important in the preparation of the process flow;
in the current production process of the JBS device, the problems of higher production cost, lower production efficiency and frequent maintenance of large-scale equipment caused by the repeated use of ion implantation and MOCVD epitaxial furnaces exist, and the process flow limits the production of the large-scale and high-efficiency JBS device; therefore, there is a need for a perovskite JBS diode and a method of manufacturing the same to solve the above problems.
Disclosure of Invention
In view of the above-mentioned technical shortcomings, the present invention aims to provide a perovskite JBS diode and a method for manufacturing the same, which are intended to solve the problems in the background art by replacing a P-type injection region with an etched perovskite thin film layer for reducing the production cost and improving the production efficiency of the JBS device.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention provides a perovskite type JBS diode and a preparation method thereof, comprising the following steps:
s1, at first in N + N formation on a substrate by MOCVD (metal organic chemical vapor deposition) epitaxial growth - An epitaxial layer;
s2, N is carried out by PECVD - Growing a mask layer on the epitaxial layer, spreading, photoetching and exposing with mask plate, and coating with N - Two groove patterns are obtained on the epitaxial layer and used for etching the P-type material groove;
s3, performing ICP etching on the device, wherein the grooves are deeper than the parts with photoresist due to the fact that no photoresist is used for protecting the grooves, so that two grooves are etched as expected;
s4, if residual glue exists, photoresist removing treatment is carried out on the device, if no residual glue exists, the device can be directly placed into X for removing residual SiO 2 Obtaining N of groove type - An epitaxial layer;
s5, N of groove type at the moment of the device - The epitaxial layer is subjected to spin coating treatment, then mask and exposure treatment are carried out, and after development, other parts except the groove part are provided with photoresist components;
s6, preparing P-type Perovskite (PEA) 2 SnI 4 By dissolving phenethylammonium iodide (PEAI) and tin iodide (SnI) in Dimethylformamide (DMF) in a molar ratio of 2:1 2 ) To prepare a perovskite solution, at N - Spin-coating and annealing the epitaxial layer for several times to form itForming a stable P-type layer structure, wherein after photoresist removal, only the groove part contains the P-type structure;
and S7, finally, carrying out electrode evaporation treatment on the device, evaporating a conductive metal layer A serving as an anode on the surface of the device, and evaporating a conductive metal layer B serving as a cathode of the device on the back of the device.
Preferably, the mask layer in the step S2 is SiO 2 And a mask layer.
Preferably, in step S4, X is BOE.
Preferably, the perovskite solution in step S6 is prepared by dissolving phenethylammonium iodide (PEAI) and tin iodide (SnI) in Dimethylformamide (DMF) at a molar ratio of 2:1 2 ) The preparation method is as follows.
Preferably, in the step S7, the conductive metal layer a is a Ti/Al metal layer, and the conductive metal layer B is a Ni/Al metal layer.
Preferably, a perovskite JBS diode, prepared by the method of any one of claims 1 to 5.
The invention has the beneficial effects that: the invention creatively replaces the ion-implanted P-type material with the spin coating and annealing of perovskite, and the design greatly saves the production cost and time and improves the efficiency of the process.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a change in a forward characteristic curve of a JBS device of a perovskite JBS diode and a method for manufacturing the same according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing the material change of the JBS device of the present invention;
fig. 3 is an image of a device of the present invention under an optical microscope.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "top," "bottom," "inner," "outer," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Examples:
as shown in fig. 1-3, the invention provides a preparation method of a perovskite JBS diode, comprising the following steps:
s1, at first in N + N formation on a substrate by MOCVD (metal organic chemical vapor deposition) epitaxial growth - An epitaxial layer;
s2, N is carried out by PECVD - Growth of a layer of SiO on the epitaxial layer 2 Masking layer, spreading, photoetching and exposing with mask plate, and coating with N - Two groove patterns are obtained on the epitaxial layer and used for etching the P-type material groove;
s3, performing ICP etching on the device, wherein the grooves are deeper than the parts with photoresist due to the fact that no photoresist is used for protecting the grooves, so that two grooves are etched as expected;
s4, if residual glue exists, photoresist removing treatment is carried out on the device, if no residual glue exists, the device can be directly placed into a BOE for removing residual SiO 2 Obtaining N of groove type - An epitaxial layer;
s5, N of groove type at the moment of the device - The epitaxial layer is subjected to spin coating treatment, then mask and exposure treatment are carried out, and after development, other parts except the groove part are provided with photoresist components;
s6, preparing P-type Perovskite (PEA) 2 SnI 4 By dissolving phenethylammonium iodide (PEAI) and tin iodide (SnI) in Dimethylformamide (DMF) in a molar ratio of 2:1 2 ) To prepare a perovskite solution, in N - Carrying out spin coating and annealing treatment on the epitaxial layer for multiple times to enable the epitaxial layer to form a stable P-type layer structure, wherein after photoresist removal, only the groove part contains the P-type structure;
and S7, finally, carrying out electrode evaporation treatment on the device, evaporating a Ti/Al metal layer on the surface to serve as an anode, and evaporating a Ni/Al metal layer on the back of the device to serve as a cathode of the device.
Further, a perovskite JBS diode is prepared by the above method.
The schematic diagram of the preparation flow of the JBS device is shown in FIG. 2, and the image of the device under an optical microscope is shown in FIG. 3.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (6)
1. A preparation method of a perovskite type JBS diode is characterized by comprising the following steps: the method comprises the following steps:
s1, at first in N + Formation of N on a substrate by MOCVD epitaxial growth - An epitaxial layer;
s2, N is carried out by PECVD - Growing a mask layer on the epitaxial layer, spreading, photoetching and exposing with mask plate, and coating with N - Two groove patterns are obtained on the epitaxial layer and used for etching the P-type material groove;
s3, performing ICP etching on the device to etch two grooves;
s4, directly putting the device into X for removing residual SiO 2 Obtaining N of groove type - An epitaxial layer;
s5, N of groove type at the moment of the device - The epitaxial layer is subjected to spin coating treatment, then mask and exposure treatment are carried out, and after development, other parts except the groove part are provided with photoresist components;
s6, preparing P-type Perovskite (PEA) 2 SnI 4 Is prepared by Dimethylformamide (DMF) to give a perovskite solution, in N - Carrying out spin coating and annealing treatment on the epitaxial layer for multiple times, so that a stable P-type layer structure can be formed;
and S7, finally, carrying out electrode evaporation treatment on the device, evaporating a conductive metal layer A serving as an anode on the surface of the device, and evaporating a conductive metal layer B serving as a cathode of the device on the back of the device.
2. The method for manufacturing a perovskite JBS diode according to claim 1, wherein: the mask layer in the step S2 is SiO 2 And a mask layer.
3. The method for manufacturing a perovskite JBS diode according to claim 1, wherein: in the step S4, X is BOE.
4. The method for manufacturing a perovskite JBS diode according to claim 1, wherein: the perovskite solution in the step S6 is prepared by dissolving phenethylammonium iodide (PEAI) and tin iodide (SnI) in Dimethylformamide (DMF) at a molar ratio of 2:1 2 ) The preparation method is as follows.
5. The method for manufacturing a perovskite JBS diode according to claim 1, wherein: in the step S7, the conductive metal layer a is a Ti/Al metal layer, and the conductive metal layer B is a Ni/Al metal layer.
6. A perovskite JBS diode, characterized in that: prepared by the method of any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310405935.7A CN117320519A (en) | 2023-04-17 | 2023-04-17 | Perovskite type JBS diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310405935.7A CN117320519A (en) | 2023-04-17 | 2023-04-17 | Perovskite type JBS diode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117320519A true CN117320519A (en) | 2023-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310405935.7A Pending CN117320519A (en) | 2023-04-17 | 2023-04-17 | Perovskite type JBS diode and preparation method thereof |
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| CN (1) | CN117320519A (en) |
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2023
- 2023-04-17 CN CN202310405935.7A patent/CN117320519A/en active Pending
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