CN117270123A - Multichannel photoelectric receiving and transmitting integrated system - Google Patents
Multichannel photoelectric receiving and transmitting integrated system Download PDFInfo
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Abstract
The invention discloses a multichannel photoelectric transceiver integrated system, which is based on a photoelectric transmission structure of a silicon-based design. By designing the physical size and electromagnetic transmission characteristics of the photoelectric transmission structure, the size matching and the electric performance matching of the photoelectric transmission structure and different types of external electric amplification chips are realized, and a multichannel photoelectric receiving and transmitting integrated system is constructed and can be used for transmitting multichannel high-speed photoelectric signals. The multichannel photoelectric transceiver integrated system disclosed by the invention has the characteristic of photoelectric transceiver integrated integration, has high integration degree, can realize photoelectric interaction by adopting the same process, avoids the heterogeneous integration problem caused by different processes, and is beneficial to future larger-scale photoelectric integration and high-speed signal transmission.
Description
Technical Field
The invention relates to the field of high-speed photoelectric communication of modern data transmission centers, in particular to a multichannel photoelectric receiving and transmitting integrated system.
Background
With the rapid development of technologies such as artificial intelligence, intelligent computing, cloud storage and the like, human science and technology has explosive growth on the demand of bottom computing power, and the data transmission quantity continuously rises from GB to TB to PB, so that higher requirements on the data transmission rate are also provided. The photoelectric technology is an important foundation of modern computing power and communication technology, photoelectric transmission integrated systems are developed based on the photoelectric technology, the photoelectric transmission integrated systems comprise optical modules, optical switches and the like, the transmission rate is also improved from 25Gbit/s per channel to 50Gbit/s per channel to 100Gbit/s per channel, and the number of channel integration is also continuously expanded from a single channel to 4 channels and 8 channels. In general, current photovoltaic technology is continually evolving towards higher channel rates, denser channel integration numbers.
The existing photoelectric transmission system such as an optical module and the like has the defects that the transmitting and receiving parts are two completely different modules, the preparation process is greatly different, meanwhile, the size and the power of the modules are limited, the good system integration cannot be realized, and the transmission rate of the photoelectric transmission system is limited. Therefore, the design of the photoelectric receiving and transmitting system is needed, and the difficulty of integration caused by the process difference of the receiving and transmitting modules is avoided, so that the transmission rate is improved, and the data transmission and exchange requirements of modern communication are met.
Disclosure of Invention
Aiming at the high-speed data transmission and exchange requirements of the existing communication and the integration difficulty of the existing photoelectric transceiver system, the invention provides a multichannel photoelectric transceiver integrated system; the photoelectric integrated efficiency and the communication rate are improved, the photoelectric integrated system is easy to integrate, the process is unified, and a new solving way is provided for a future photoelectric receiving and transmitting integrated system.
In order to achieve the above object, the present invention provides a multi-channel photoelectric transceiver integrated system, which comprises a first optical fiber array, a second optical fiber array, a silicon-based transmitting chip, a transmitting signal amplifying module, a silicon-based receiving chip and a receiving signal amplifying module;
the first optical fiber array provides an external light source for the silicon-based transmitting chip through optical packaging and outputs the modulated optical signals to the optical fibers;
the second optical fiber array provides modulated optical signals for the silicon-based receiving chip through optical packaging;
the silicon-based transmitting chip is connected with a transmitting signal amplifying module through high-speed radio frequency electric signals, the transmitting signal amplifying module is connected with a signal source of an external arbitrary waveform transmitter, and the transmitting signal amplifying module amplifies the high-speed electric signals generated by the arbitrary waveform transmitter and modulates the high-speed electric signals onto the silicon-based transmitting chip;
the silicon-based receiving chip is connected with the receiving signal amplifying module through high-speed radio frequency electric signals, the receiving signal amplifying module is connected with the external error code instrument, and the receiving signal amplifying module amplifies the high-speed electric signals generated by the silicon-based receiving chip and outputs the amplified high-speed electric signals to the error code instrument for signal quality analysis;
the silicon light structures of the silicon-based transmitting chip and the silicon-based receiving chip are the same and are integrated on the same wafer; the radio frequency electrode led out of the silicon-based transmitting chip is of a GS structure, and the radio frequency electrode led out of the silicon-based receiving chip is of a GSG structure.
Further, the silicon optical structure comprises two silicon-based PN junction structures, and the two silicon-based PN junctions are connected with a P-type semiconductor and an N-type semiconductor with doping levels becoming higher in sequence; in the silicon-based PN junctions, the material types from left to right are N++, N+, N, P, P +, P++, P+, P, N, N + and N++, and the two silicon-based PN junctions are optical waveguide structures, so that light passes through the two silicon-based PN junctions.
Further, the silicon-based PN junction structure is arranged on the SiO2 layer, the SiO2 layer is arranged on the Si layer, and meanwhile, siO2 materials are arranged between the junction gaps of the silicon-based PN junctions and the top layer of the silicon-based PN junction.
Further, the electrode structure is arranged at the top layer of the silicon optical structure, the electrode material is aluminum, and the electrode structure is respectively connected with N++ and P++ of the silicon-based PN junction structure; the characteristic impedance Z1 of the silicon-based transmitting chip electrode GS structure is matched with the transmitting signal amplifying module, and the characteristic impedance Z2 of the silicon-based receiving chip electrode GSG structure is matched with the receiving signal amplifying module.
Further, the multichannel photoelectric transceiver integrated system works in an LWDM wavelength range under an O wave band, each channel adopts a specific LWDM channel, and the channel wavelengths are not overlapped.
Further, the silicon-based emission chip comprises a plurality of channels, each channel is led out of two optical ports, and the two optical ports of each channel adopt end face couplers of two spot-size converters to respectively input and output light; the plurality of channels form a spot-size converter array, and are arranged at equal intervals, and the center-to-center distance of adjacent spot-size converters is matched with that of the first optical fiber array.
Further, the silicon-based receiving chip comprises a plurality of channels, each channel is led out of two optical ports, and the two optical ports of each channel adopt end face couplers of two spot-size converters to respectively input and output light; the plurality of channels form a spot-size converter array, and are arranged at equal intervals, and the center distance between adjacent spot-size converters is matched with the second optical fiber array.
Further, the silicon-based transmitting chip realizes the optical path coupling of an external light source and the mode spot converter array through the optical package of the optical fiber array; the silicon-based receiving chip realizes the optical path coupling of an external light source and the spot-size converter array through the optical package of the optical fiber array.
Further, the silicon-based transmitting chip is electrically connected with the transmitting signal amplifying module in a gold wire bonding mode, the transmitting signal amplifying module is connected with the radio frequency input switching port through the gold wire bonding, and the radio frequency input switching port is connected with the arbitrary waveform generator through the radio frequency cable.
Further, the silicon-based receiving chip is electrically connected with the receiving signal amplifying module in a gold wire punching mode, the receiving signal amplifying module is connected with the radio frequency output switching port through the gold wire punching mode, and the radio frequency output switching port is connected with the error code instrument through a radio frequency cable.
Compared with the prior art, the invention has the beneficial effects that: the multichannel photoelectric receiving and transmitting integrated system provided by the invention firstly adopts a silicon optical structure with specific design, can be used for transmitting and receiving silicon optical signals based on the same silicon optical structure and different external electrode structures, realizes the design of a silicon optical transmitting and receiving chip under the same process, and has obvious integration advantages. And secondly, based on the silicon-based transmitting chip and the silicon-based receiving chip which are designed by the silicon optical structure, multichannel photoelectric receiving and transmitting integration is developed, a multichannel photoelectric receiving and transmitting integrated system is obtained, and a test and verification complete link is built. Different from the technical approach that the high-speed photoelectric transceiving integration must be integrated through heterogeneous integration or separation integration at present, the multichannel photoelectric transceiving integrated system provides a new photoelectric transceiving integrated technical path and provides a new thought for the future higher-speed photoelectric transmission and higher-density photoelectric integration.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 is a schematic diagram of a 4-channel photoelectric transceiver integrated system according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a silicon optical structure of a single channel according to an embodiment of the present invention;
FIG. 3 is a schematic top view of a single channel silicon light emitting structure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a single channel silicon light emitting chip according to an embodiment of the present invention;
FIG. 5 is a schematic top view of a single channel silicon light receiving structure according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a single channel silicon light receiving chip according to an embodiment of the present invention.
Detailed Description
In order to make the purpose and the technical solution of the embodiments of the present invention clearer, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. In general, the components of the inventive embodiments described and illustrated in the figures may be implemented in other different detailed structures and dimensional changes. In the drawings of the present invention, in order to more clearly describe the working principle of each element in the device of the present invention, it is not to be understood that the size, dimension and shape of each component inside the structure are limited.
In the description of the present invention, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," etc. refer to the orientation or positional relationship as shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the invention. The word "if" as used herein may be interpreted as "at … …" or "at … …" or "responsive to a determination", depending on the context.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
In order to better understand the technical features, objects and effects of the present invention, the present invention is described in more detail below with reference to fig. 1 to 6 with respect to a multi-channel optoelectronic transceiver integrated system. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. It should be noted that, the structural figures in these drawings are all in simplified form and all use non-precise proportions, and are only used to facilitate and clearly illustrate the effects of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The present invention will be described in detail with reference to the accompanying drawings. The features of the examples and embodiments described below may be combined with each other without conflict.
The invention provides a multichannel photoelectric transceiver integrated system, referring to fig. 1, the system comprises two optical fiber arrays (a first optical fiber array and a second optical fiber array), a silicon-based transmitting chip, a transmitting signal amplifying module (a driving amplifier), a silicon-based receiving chip, a receiving signal amplifying module (a transimpedance amplifier) and the like.
The first optical fiber array is provided with 8 optical fibers, the center-to-center distance between two adjacent optical fibers is 375um, an external light source is provided by aligning the 8 optical fibers of the optical package with the 8 mode spot converter arrays of the silicon-based transmitting chip, and the modulated optical signals are output to the optical fibers.
The second optical fiber array is provided with 8 optical fibers, the center-to-center distance between two adjacent optical fibers is 375um, and the 8 optical fibers are aligned with 8 mode spot-size converter arrays of the silicon-based receiving chip through the optical package to provide the modulated optical signals for the silicon-based receiving chip.
The silicon-based transmitting chip is provided with 4 parallel transmitting channels, the performance of each channel is identical to the structural size, and the center-to-center distance d1 of two adjacent channels is 625um and is consistent with the center-to-center distance of the adjacent channels of the transmitting signal amplifying module.
The silicon-based receiving chip is provided with 4 parallel receiving channels, the performance of each channel is the same as the structural size, and the center-to-center distance d2 of two adjacent channels is 750um and is consistent with the center-to-center distance of the adjacent channels of the receiving signal amplifying module.
The silicon-based transmitting chip is connected with the transmitting signal amplifying module through high-speed radio frequency electric signals, the transmitting signal amplifying module is provided with 4 channels, the performance of each channel is identical to the structural size, the center distance d3 between every two adjacent channels is 625um, and the transmitting signal amplifying module is connected with an external arbitrary waveform transmitter signal source through a radio frequency cable; the transmitting signal amplifying module amplifies and modulates the high-speed electric signal generated by the arbitrary waveform transmitter to the silicon-based transmitting chip, and the high-speed electric signal generated by the arbitrary waveform transmitter is a differential signal.
The silicon-based receiving chip is connected with the receiving signal amplifying module through high-speed radio frequency electric signals, the receiving signal amplifying module is provided with 4 channels, the performance of each channel is the same as the structural size, the center distance d4 between every two adjacent channels is 750um, and the receiving signal amplifying module is connected with an external error code instrument through a radio frequency cable; the receiving signal amplifying module amplifies the high-speed electric signal generated by the silicon-based receiving chip and outputs the amplified high-speed electric signal to the error code instrument for signal quality analysis, and the receiving signal amplifying module outputs differential signals to the error code instrument.
Referring to fig. 2, a single channel silicon optical structure is shown. The silicon-based transmitting chip and the silicon-based receiving chip can adopt the same silicon optical structure to realize the silicon-based transmitting and receiving performances through the silicon optical performance and size structural design. The silicon-based transmitting chip and the silicon-based receiving chip can be integrated on one wafer, the design and the preparation can be completed by the same process, the specific channel number required by the silicon-based transmitting chip and the silicon-based receiving chip is not difficult to realize in terms of process, the channel number of the silicon-based transmitting and receiving system can be flexibly determined according to actual requirements, the integration level of the channel number of the silicon-based transmitting and receiving system is higher, and the integration difficulty caused by the process difference of the traditional photoelectric transmitting chip and the photoelectric receiving chip is avoided.
Further, the silicon optical structure of each channel comprises two silicon-based PN junction structures, the two silicon-based PN junctions are connected with a P-type semiconductor and an N-type semiconductor, the doping degree of the P-type semiconductor is sequentially increased, and the material types are N++, N+, N, P, P +, P++, P+, P, N, N + and N++ from left to right. The thickness of the N++, N+, P+ and P++ semiconductors is l1, the thickness of the N, P semiconductors is l2, and the width of the silicon-based PN junction is w1, and the silicon-based PN junction can pass light with specific wavelength through the design of l1, l2 and w 1. The specific semiconductor doping concentration and semiconductor dimensions are determined by the process level of the semiconductor manufacturer.
Further, the silicon optical structure of the single channel comprises two paths of light, one path of light enters and the other path of light exits, the single channel works in an LWDM wavelength range under an O wave band, each channel adopts a specific LWDM channel, and the channel wavelengths are not overlapped. The two silicon-based PN junctions are optical waveguide structures, light entering is firstly divided into two parts by an optical waveguide of the silicon optical structure, the divided two parts of light respectively enter the two silicon-based PN junctions of the silicon-based structure, the two parts of light are respectively transmitted from the two silicon-based PN junctions, modulation of electric signals is completed, and the two parts of light are then combined into one part by the optical waveguide and are transmitted to a light-emitting light path; in order to modulate the phase difference of two paths of equal-split light, a thermal resistor is arranged on the optical waveguide where one path of equal-split light is located, and the phase difference of the two paths of equal-split light is changed by a heating mode. The silicon-based PN junction structure is arranged on the SiO2 layer, the SiO2 layer is arranged on the Si layer, and meanwhile, siO2 materials are arranged between the junction gaps of the silicon-based PN junctions and the top layer of the silicon-based PN junction.
Referring to fig. 3 and 4, the radio frequency electrode led out by the silicon-based emitting chip is in a GS structure, the silicon-based emitting chip electrode is arranged at the top layer of the silicon optical structure, and the electrode material is aluminum and is respectively connected with N++ and P++ of the silicon-based PN junction structure. The characteristic impedance Z1 of the silicon-based transmitting chip electrode GS structure is 70 ohms and is matched with the impedance range of 60 ohms-80 ohms of the transmitting signal amplifying module by designing the sizes g1 of the silicon-based transmitting chip electrode to be 200um, w2 to be 25um and l3 to be 2.5mm, and meanwhile, the matching resistor R1 is arranged at the tail end of the GS electrode to be 70 ohms, so that the matching resistor R1 is matched with the characteristic impedance Z1, and the reflection of radio frequency signals is minimum; meanwhile, the thermal resistor R2 arranged on the optical waveguide of the silicon-based transmitting chip is 200 ohms, and the phase of one of the two paths of equal optical paths is changed through the transmission of the thermal resistor, so that the phase modulation performance of the silicon-based transmitting chip is adjusted.
Referring to fig. 5 and 6, the radio frequency electrode led out from the silicon-based receiving chip is in a GSG structure, the silicon-based receiving chip electrode is arranged at the top layer of the silicon optical structure, and the electrode material is aluminum and is respectively connected with n++ and p++ of the silicon-based PN junction structure. The characteristic impedance Z2 of the GSG structure of the silicon-based receiving chip electrode is 20 ohms and is matched with the receiving signal amplifying module by designing the dimensions g2 of the silicon-based receiving chip electrode to be 200um, w3 to be 20um, s1 to be 2.5um and l4 to be 2.5mm, and meanwhile, the matching resistor R3 is arranged at the tail end of the GSG electrode to be 20 ohms, so that the matching resistor R3 is matched with the characteristic impedance Z2, and the reflection of radio frequency signals is minimum; meanwhile, the thermal resistor R4 arranged on the optical waveguide of the silicon-based receiving chip is 200 ohms, and the phase of one of the two paths of equal optical paths is changed through the heating of the thermal resistor, so that the receiving signal performance of the silicon-based receiving chip is adjusted.
Further, by reasonably setting the sizes g1, g2, w3, s1, l3 and l4 of the silicon optical structure electrodes, the silicon-based transmitting chip and the silicon-based receiving chip multiplex the same silicon optical structure. There is g1=g2, l3=l4, w2=w3+2×s1, so that the silicon-based transmitting and receiving functions can be implemented on the same silicon optical structure, respectively. Meanwhile, the silicon-based transmitting chip can be matched with the transmitting signal amplifying module in structure and electrical property, and the silicon-based receiving chip is matched with the receiving signal amplifying module in structure and electrical property. The silicon-based transmitting chip and the silicon-based receiving chip are different in that the electrode structures are a GS structure and a GSG structure respectively, and bonding pads with different sizes are led out from two sides of the silicon optical structure. The wire bonding pad is arranged on the top layer of the silicon-based chip and is already in the second half of the process, so that the whole process is not greatly influenced.
Referring to fig. 4, two optical ports are led out from each channel of the silicon-based emission chip, the optical ports respectively perform optical input and output by adopting end face couplers of two spot-size converters, the plurality of channels form a spot-size converter array, the spot-size converters are arranged at equal intervals, and the center distance 375um between adjacent spot-size converters can be aligned with the existing first optical fiber array. By means of the optical packaging technology, optical matching liquid is filled between the first optical fiber array and the silicon-based emitting chip spot-size converter, and the outside is wrapped with curing glue, low-loss coupling of light can be achieved, and loss is controlled to be about 2 dB.
Referring to fig. 6, two optical ports are led out from each channel of the silicon-based receiving chip, the optical ports respectively input and output light by adopting end face couplers of two spot-size converters, the spot-size converters are formed by a plurality of channels, the spot-size converters are arranged at equal intervals, and the center distance 375um between adjacent spot-size converters can be aligned with the existing second optical fiber array. By the optical packaging technology, optical matching liquid is filled between the second optical fiber array and the silicon-based receiving chip spot-size converter, and the outside is wrapped with curing glue, so that low-loss coupling of light can be realized, and the loss is controlled to be about 2 dB.
Referring to fig. 1, the silicon-based transmitting chip is electrically connected with the transmitting signal amplifying module by double-line printing. In order to improve the high-frequency performance of the link, the radio frequency bonding pad size of the silicon-based transmitting chip is 120um, so that the connection requirement of the bonding double gold wires is met. The diameter of the gold wire is 1mil, and the gold wire is welded in a wedge welding way, so that the length of the gold wire is further controlled, and the high-frequency performance of the link is improved. The transmitting signal amplifying module is connected with the radio frequency input switching port through a gold wire, and the radio frequency input switching port is a high-frequency switching port of the type of 2.4 mm; the radio frequency input interface is connected with the arbitrary waveform generator through a radio frequency cable.
Referring to fig. 1, the silicon-based receiving chip is electrically connected with the receiving signal amplifying module by gold wire bonding, and in order to improve the high-frequency performance of the link, the radio-frequency wire bonding pad size of the silicon-based receiving chip is 100um x 100um, so that the connection requirement of double gold wires is met. The diameter of the gold wire is 1mil, and the gold wire is welded in a wedge welding way, so that the length of the gold wire is further controlled, and the high-frequency performance of the link is improved. The receiving signal amplifying module is connected with the radio frequency output switching port through a gold wire, and the radio frequency output switching port is a GPPO type high-frequency switching port; the radio frequency output conversion interface is connected with the error code instrument through a radio frequency cable, and the signal performance of a system link is analyzed.
The multichannel photoelectric transceiver integrated system adopts the silicon optical structure with specific design, realizes the transmission and the reception of silicon optical signals based on the multiplexing of the same silicon optical structure, can complete the design of silicon optical transmitting and receiving chips on the same wafer in the same process, and has obvious integration advantages. By introducing different types of electric amplifying chips, a multichannel photoelectric receiving and transmitting integrated system is obtained, a test and verification complete link is built, and a new technical path is provided for future high-speed photoelectric integration.
The foregoing is merely exemplary of the present invention and is not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are to be included in the scope of the claims of the present invention.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. The specification and examples are to be regarded in an illustrative manner only.
It is to be understood that the present application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof.
The above embodiments are merely for illustrating the design concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement the same, the scope of the present invention is not limited to the above embodiments. Therefore, all equivalent changes or modifications according to the principles and design ideas of the present invention are within the scope of the present invention.
Claims (10)
1. The multichannel photoelectric transceiver integrated system is characterized by comprising a first optical fiber array, a second optical fiber array, a silicon-based transmitting chip, a transmitting signal amplifying module, a silicon-based receiving chip and a receiving signal amplifying module;
the first optical fiber array provides an external light source for the silicon-based transmitting chip through optical packaging and outputs the modulated optical signals to the optical fibers;
the second optical fiber array provides modulated optical signals for the silicon-based receiving chip through optical packaging;
the silicon-based transmitting chip is connected with a transmitting signal amplifying module through high-speed radio frequency electric signals, the transmitting signal amplifying module is connected with a signal source of an external arbitrary waveform transmitter, and the transmitting signal amplifying module amplifies the high-speed electric signals generated by the arbitrary waveform transmitter and modulates the high-speed electric signals onto the silicon-based transmitting chip;
the silicon-based receiving chip is connected with the receiving signal amplifying module through high-speed radio frequency electric signals, the receiving signal amplifying module is connected with the external error code instrument, and the receiving signal amplifying module amplifies the high-speed electric signals generated by the silicon-based receiving chip and outputs the amplified high-speed electric signals to the error code instrument for signal quality analysis;
the silicon light structures of the silicon-based transmitting chip and the silicon-based receiving chip are the same and are integrated on the same wafer; the radio frequency electrode led out of the silicon-based transmitting chip is of a GS structure, and the radio frequency electrode led out of the silicon-based receiving chip is of a GSG structure.
2. The multi-channel optoelectronic transceiver integrated system of claim 1, wherein said silicon optical structure comprises two silicon-based PN junction structures connected to P-type and N-type semiconductors with sequentially higher doping levels; in the silicon-based PN junctions, the material types from left to right are N++, N+, N, P, P +, P++, P+, P, N, N + and N++, and the two silicon-based PN junctions are optical waveguide structures, so that light passes through the two silicon-based PN junctions.
3. The multi-channel optoelectronic transceiver integrated system of claim 2, wherein said silicon-based PN junction structure is disposed on top of a SiO2 layer, the SiO2 layer is disposed on top of a Si layer, and a SiO2 material is disposed between the silicon-based PN junctions at the junction gap and the top of the silicon-based PN junctions.
4. The multi-channel photoelectric transceiver integrated system according to claim 2, wherein the electrode structure is at the top layer of the silicon optical structure, the electrode material is aluminum, and the electrode structure is respectively connected with N++ and P++ of the silicon-based PN junction structure; the characteristic impedance Z1 of the silicon-based transmitting chip electrode GS structure is matched with the transmitting signal amplifying module, and the characteristic impedance Z2 of the silicon-based receiving chip electrode GSG structure is matched with the receiving signal amplifying module.
5. The integrated multi-channel optoelectronic transceiver system of claim 1, wherein said integrated multi-channel optoelectronic transceiver system operates in an LWDM wavelength range in the O-band, each channel employs a specific channel of LWDM, and the channel wavelengths do not overlap.
6. The multi-channel photoelectric transceiver integrated system of claim 1, wherein the silicon-based transmitting chip comprises a plurality of channels, each channel is led out of two optical ports, and the two optical ports of each channel respectively input and output light by adopting an end face coupler of two spot-size converters; the plurality of channels form a spot-size converter array, and are arranged at equal intervals, and the center-to-center distance of adjacent spot-size converters is matched with that of the first optical fiber array.
7. The multi-channel photoelectric transceiver integrated system of claim 1, wherein the silicon-based receiving chip comprises a plurality of channels, each channel is led out of two optical ports, and the two optical ports of each channel respectively input and output light by adopting an end face coupler of two spot-size converters; the plurality of channels form a spot-size converter array, and are arranged at equal intervals, and the center distance between adjacent spot-size converters is matched with the second optical fiber array.
8. The multi-channel optoelectronic transceiver integrated system of claim 1, wherein said silicon-based transmitting chip is configured to couple an external light source to the optical path of the spot-size converter array by optical packaging of the optical fiber array; the silicon-based receiving chip realizes the optical path coupling of an external light source and the spot-size converter array through the optical package of the optical fiber array.
9. The multi-channel optoelectronic transceiver integrated system of claim 1, wherein said silicon-based transmitting chip is electrically connected to a transmitting signal amplifying module by way of gold wire bonding, the transmitting signal amplifying module is connected to a radio frequency input interface by way of gold wire bonding, and the radio frequency input interface is connected to an arbitrary waveform generator by way of a radio frequency cable.
10. The multi-channel photoelectric transceiver integrated system according to claim 1, wherein the silicon-based receiving chip is electrically connected with the receiving signal amplifying module by way of gold wire bonding, the receiving signal amplifying module is connected with the radio frequency output switching port by way of gold wire bonding, and the radio frequency output switching port is connected with the error code device by way of radio frequency cable.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106468809A (en) * | 2015-08-19 | 2017-03-01 | 乾坤科技股份有限公司 | Photoelectricity module and its manufacture method |
| US9651751B1 (en) * | 2016-03-10 | 2017-05-16 | Inphi Corporation | Compact optical transceiver by hybrid multichip integration |
| WO2019144900A1 (en) * | 2018-01-24 | 2019-08-01 | 中兴通讯股份有限公司 | Signal processing method and device |
| US20210239922A1 (en) * | 2019-03-15 | 2021-08-05 | Hisense Broadband Multimedia Technologies Co., Ltd. | Optical module |
| US11178473B1 (en) * | 2020-06-05 | 2021-11-16 | Marvell Asia Pte, Ltd. | Co-packaged light engine chiplets on switch substrate |
| CN114244445A (en) * | 2021-12-17 | 2022-03-25 | 联合微电子中心有限责任公司 | Optical phased array chip, underwater communication system, calibration system and communication method |
| CN114647030A (en) * | 2022-05-19 | 2022-06-21 | 深圳市迅特通信技术股份有限公司 | Silicon-based photoelectronic receiving and transmitting integrated chip for PON OLT system |
| WO2022161413A1 (en) * | 2021-01-28 | 2022-08-04 | 青岛海信宽带多媒体技术有限公司 | Optical module and manufacturing method for silicon optical chip |
| CN115308834A (en) * | 2022-08-10 | 2022-11-08 | 松山湖材料实验室 | Integrated optical transceiver chip, optoelectronic device and optical transceiver system |
| WO2022257486A1 (en) * | 2021-06-08 | 2022-12-15 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| WO2023100607A1 (en) * | 2021-11-30 | 2023-06-08 | ソニーグループ株式会社 | Interface structure, optical connector, transmitter, receiver, optical cable, and optical communication system |
-
2023
- 2023-11-23 CN CN202311568140.4A patent/CN117270123B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106468809A (en) * | 2015-08-19 | 2017-03-01 | 乾坤科技股份有限公司 | Photoelectricity module and its manufacture method |
| US9651751B1 (en) * | 2016-03-10 | 2017-05-16 | Inphi Corporation | Compact optical transceiver by hybrid multichip integration |
| WO2019144900A1 (en) * | 2018-01-24 | 2019-08-01 | 中兴通讯股份有限公司 | Signal processing method and device |
| US20210239922A1 (en) * | 2019-03-15 | 2021-08-05 | Hisense Broadband Multimedia Technologies Co., Ltd. | Optical module |
| US11178473B1 (en) * | 2020-06-05 | 2021-11-16 | Marvell Asia Pte, Ltd. | Co-packaged light engine chiplets on switch substrate |
| WO2022161413A1 (en) * | 2021-01-28 | 2022-08-04 | 青岛海信宽带多媒体技术有限公司 | Optical module and manufacturing method for silicon optical chip |
| WO2022257486A1 (en) * | 2021-06-08 | 2022-12-15 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| WO2023100607A1 (en) * | 2021-11-30 | 2023-06-08 | ソニーグループ株式会社 | Interface structure, optical connector, transmitter, receiver, optical cable, and optical communication system |
| CN114244445A (en) * | 2021-12-17 | 2022-03-25 | 联合微电子中心有限责任公司 | Optical phased array chip, underwater communication system, calibration system and communication method |
| CN114647030A (en) * | 2022-05-19 | 2022-06-21 | 深圳市迅特通信技术股份有限公司 | Silicon-based photoelectronic receiving and transmitting integrated chip for PON OLT system |
| CN115308834A (en) * | 2022-08-10 | 2022-11-08 | 松山湖材料实验室 | Integrated optical transceiver chip, optoelectronic device and optical transceiver system |
Non-Patent Citations (1)
| Title |
|---|
| 孙瑜;刘丰满;薛海韵;: "高速高密度光电共封装技术", 中兴通讯技术, no. 04, 2 August 2018 (2018-08-02) * |
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