CN117259331A - Dosing device for automatic cleaning of indium phosphide wafers comprising a flow control - Google Patents
Dosing device for automatic cleaning of indium phosphide wafers comprising a flow control Download PDFInfo
- Publication number
- CN117259331A CN117259331A CN202311567071.5A CN202311567071A CN117259331A CN 117259331 A CN117259331 A CN 117259331A CN 202311567071 A CN202311567071 A CN 202311567071A CN 117259331 A CN117259331 A CN 117259331A
- Authority
- CN
- China
- Prior art keywords
- indium phosphide
- flow control
- phosphide wafer
- cleaning
- vacuum adsorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 title claims abstract description 139
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 138
- 238000004140 cleaning Methods 0.000 title claims abstract description 54
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 134
- 230000007246 mechanism Effects 0.000 claims abstract description 103
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 62
- 238000011010 flushing procedure Methods 0.000 claims abstract description 26
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 25
- 238000001179 sorption measurement Methods 0.000 claims description 70
- 239000007921 spray Substances 0.000 claims description 33
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 10
- 230000000694 effects Effects 0.000 description 10
- 230000009471 action Effects 0.000 description 8
- 239000002904 solvent Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000861 blow drying Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
- B08B3/123—Cleaning travelling work, e.g. webs, articles on a conveyor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/02—Devices for holding articles during cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a quantitative supply device for automatically cleaning an indium phosphide wafer, which comprises a flow control device, and relates to the technical field of indium phosphide wafers, wherein the quantitative supply device comprises a cleaning mechanism, a nitrogen treatment chamber, an ultrasonic cleaning chamber and a DI water flushing chamber, wherein the inside of the cleaning mechanism is provided with the quantitative supply mechanism; the quantity of indium phosphide wafer bodies processed by the quantitative supply device is greatly improved, and the working efficiency of the quantitative supply device is ensured.
Description
Technical Field
The invention relates to the technical field of indium phosphide wafers, in particular to a quantitative supply device comprising flow control for automatically cleaning an indium phosphide wafer.
Background
Indium phosphide wafers are a semiconductor material commonly used in the manufacture of high frequency, high speed and optoelectronic devices. The wafer is composed of phosphorus element and indium element, has excellent electronic characteristics and photoelectronic performance, and is widely applied in the fields of communication, microwaves, photonics and other fields;
in the process of producing an indium phosphide wafer, a special cleaning method is required to clean the indium phosphide wafer, for example, an indium phosphide wafer disclosed in chinese patent with publication No. CN102456549B and a surface cleaning method thereof, and a cleaning method for an indium phosphide wafer disclosed in patent with publication No. CN113690128a generally require the use of an organic solvent and DI water for co-cleaning, and since the surface of the indium phosphide wafer is cleaned by the organic solvent, the solvent remains on the surface of the indium phosphide wafer, the DI water is required to be cleaned, the DI water cleaning force is limited in order to protect the indium phosphide wafer, the top surface of the indium phosphide wafer is required to be cleaned under a safe flow, and in order to ensure the cleaning effect of the indium phosphide wafer, the cleaning time of the DI water is only prolonged, so that the cleaning efficiency of the indium phosphide wafer cannot be improved.
Disclosure of Invention
In order to overcome the technical problems described above, the present invention is directed to providing a quantitative supply device for automatic cleaning of an indium phosphide wafer, which includes a flow control device, so as to solve the problem that in the prior art, when DI water is used to clean the indium phosphide wafer, the DI water is limited in cleaning force, the top surface of the indium phosphide wafer needs to be cleaned at a safe flow rate, and in order to ensure the cleaning effect of the indium phosphide wafer, the DI water cleaning time can only be prolonged, which results in the problem that the cleaning efficiency of the indium phosphide wafer cannot be improved.
The aim of the invention can be achieved by the following technical scheme:
the quantitative supply device comprises a cleaning mechanism, a nitrogen treatment chamber, an ultrasonic cleaning chamber and a DI water flushing chamber are arranged in the cleaning mechanism, the top surface of the cleaning mechanism is provided with the quantitative supply mechanism, the quantitative supply mechanism simultaneously transfers a plurality of indium phosphide wafer bodies among the nitrogen treatment chamber, the ultrasonic cleaning chamber and the DI water flushing chamber in a rotating mode, the nitrogen supply mechanism is arranged on the outer side of the nitrogen treatment chamber, the DI water supply mechanism is arranged on the outer side of the DI water flushing chamber, flow control spray heads are arranged on the nitrogen supply mechanism and the DI water supply mechanism, and nitrogen is respectively supplied to the top surface of the indium phosphide wafer bodies in the nitrogen treatment chamber and DI water is supplied to the top surface of the indium phosphide wafer bodies in the DI water flushing chamber.
As a further scheme of the invention: the nitrogen treatment chamber, the ultrasonic cleaning chamber and the DI water flushing chamber are annularly arranged in the cleaning mechanism.
As a further scheme of the invention: the quantitative supply mechanism comprises a hydraulic push rod, the bottom end of the hydraulic push rod is connected with a driving motor, and the driving motor is arranged at the center position inside the cleaning mechanism.
As a further scheme of the invention: the side fixedly connected with three swinging arms of hydraulic push rod, the one end that the three swinging arms kept away from hydraulic push rod is connected with flexible arm, and the bottom of flexible arm is connected with a plurality of vacuum adsorption mechanisms.
As a further scheme of the invention: and a plurality of vacuum adsorption mechanisms are vertically stacked.
As a further scheme of the invention: the vacuum adsorption mechanism comprises a base, wherein an adjusting seat is fixedly connected to the middle position of the top surface of the base, a vacuum adsorption disc is arranged at the middle position of the top surface of the adjusting seat, a motor is arranged at the bottom of the adjusting seat, which is close to the vacuum adsorption disc, and an output shaft of the motor is fixedly connected with the center position of the bottom surface of the vacuum adsorption disc.
As a further scheme of the invention: four telescopic rods are arranged on the top surface of the adjusting seat and close to the outer side of the vacuum adsorption disc, and adjusting arms are nested on the outer sides of the telescopic rods.
As a further scheme of the invention: the connecting hole has been seted up to the one end top surface that the telescopic link was kept away from to the adjusting arm, and the top surface of adjusting arm is close to the position of connecting hole and is equipped with the rubber dog, and one side that the connecting hole was kept away from to the rubber dog is equipped with the arc curved surface.
As a further scheme of the invention: the flow control spray head comprises a spray head main body, one side of the spray head main body is fixedly connected with a connecting arm, a plurality of groups of spray nozzles are installed on the bottom surface of the spray head main body, and the inclination angles of the plurality of groups of spray nozzles are different.
As a further scheme of the invention: the top surface central point of shower nozzle main part puts fixedly connected with infrared inductor.
The invention has the beneficial effects that:
according to the invention, through the cleaning mechanism and the quantitative supply mechanism, as the quantitative supply mechanism simultaneously transfers a plurality of indium phosphide wafer bodies among the nitrogen treatment chamber, the ultrasonic cleaning chamber and the DI water flushing chamber in a rotating mode, namely, the quantitative supply mechanism can simultaneously treat three groups of indium phosphide wafer bodies, and the number of each group of indium phosphide wafer bodies is also a plurality of, the number of the indium phosphide wafer bodies treated by the quantitative supply device is greatly improved, and the working efficiency of the quantitative supply device is ensured.
According to the invention, through the vacuum adsorption disc, after the motor is opened, the output shaft of the motor can drive the vacuum adsorption disc to rotate, and the vacuum adsorption disc adsorbs the indium phosphide wafer body, so that the vacuum adsorption disc can also drive the indium phosphide wafer body to rotate, when the indium phosphide wafer body is in the nitrogen treatment chamber, the high-speed rotating indium phosphide wafer body can generate a larger speed difference with the top surface of the indium phosphide wafer body when encountering nitrogen sprayed by the flow control spray head in the nitrogen treatment chamber, thus not only improving the effect of nitrogen pretreatment, but also improving the effect of nitrogen blow-drying, and in the DI water flushing chamber, the high-speed rotating indium phosphide wafer body can enable DI water on the top surface of the indium phosphide wafer body to generate centrifugal force, so that DI water can flow rapidly on the top surface of the indium phosphide wafer body, and the flushing effect of the DI water on the indium phosphide wafer body is improved.
According to the invention, through the vacuum adsorption mechanism, because the air cavity is communicated with the cylindrical groove through the air transmission channel, the cylindrical groove is communicated to form negative pressure, so that the regulating arms can overcome the elasticity of the springs under the action of the air pressure, move towards one end of the vacuum adsorption disc and act on the end face of the indium phosphide wafer body, according to the principle of the communicating vessel, the pressures in the cylindrical grooves in the four regulating arms are consistent, so that the acting force of the four regulating arms on the indium phosphide wafer body is the same, the indium phosphide wafer body can be fixed at the central position of the vacuum adsorption disc, at the moment, the vacuum adsorption disc works to adsorb the indium phosphide wafer body, the air pump is closed, and the four regulating arms can be automatically unfolded under the action of the spring elasticity, so that the purpose of the arrangement can be ensured that the indium phosphide wafer body is adsorbed at the central position of the vacuum adsorption disc, and the indium phosphide wafer body can be ensured to be more stable when the vacuum adsorption disc drives the indium phosphide wafer body to rotate at high speed.
In the invention, every two vacuum adsorption mechanisms are connected through two connecting rods, the connecting rods are matched with two connecting holes in alignment, when the position of the indium phosphide wafer body is adjusted by the adjusting arms on the vacuum adsorption mechanisms, the adjusting arms among the plurality of vacuum adsorption mechanisms synchronously move under the action of the connecting rods, so that the adjusting arms on all the vacuum adsorption mechanisms can be ensured to move in place as long as one of the plurality of vacuum adsorption mechanisms moves in place, and the problem of inaccurate adjustment caused by repeated use of the adjusting arms can be avoided.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a schematic view of the structure of the metering mechanism of the present invention;
FIG. 4 is a schematic diagram of a stacked structure of a vacuum suction mechanism according to the present invention;
FIG. 5 is a schematic view of the vacuum suction mechanism of the present invention;
FIG. 6 is a schematic view of a partial construction of an adjustment arm according to the present invention;
FIG. 7 is a schematic view of the bottom structure of the flow control spray head of the present invention;
fig. 8 is a schematic top view of a flow control spray head according to the present invention.
In the figure: 1. a cleaning mechanism; 11. a nitrogen treatment chamber; 12. an ultrasonic cleaning chamber; 13. a DI water rinse chamber; 2. a quantitative supply mechanism; 21. a hydraulic push rod; 22. a rotating arm; 23. a telescoping arm; 24. a vacuum adsorption mechanism; 241. a base; 242. an adjusting seat; 243. a telescopic rod; 244. an adjusting arm; 2441. a connection hole; 2442. a rubber stopper; 2443. an arc-shaped curved surface; 245. a vacuum adsorption plate; 25. a connecting rod; 3. a nitrogen gas supply mechanism; 4. a DI water supply mechanism; 5. a flow control spray head; 51. a head main body; 52. a connecting arm; 53. a nozzle; 54. an infrared sensor; 6. an indium phosphide wafer body.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
As shown in fig. 1 and 2, the invention discloses a quantitative supply device for automatically cleaning an indium phosphide wafer, which comprises a cleaning mechanism 1, wherein a nitrogen treatment chamber 11, an ultrasonic cleaning chamber 12 and a DI water flushing chamber 13 are arranged in the cleaning mechanism 1, a quantitative supply mechanism 2 is arranged on the top surface of the cleaning mechanism 1, the quantitative supply mechanism 2 simultaneously transfers a plurality of indium phosphide wafer bodies 6 between the nitrogen treatment chamber 11, the ultrasonic cleaning chamber 12 and the DI water flushing chamber 13 in a rotating manner, a nitrogen supply mechanism 3 is arranged on the outer side of the nitrogen treatment chamber 11, a DI water supply mechanism 4 is arranged on the outer side of the DI water flushing chamber 13, flow control spray heads 5 are arranged on the nitrogen supply mechanism 3 and the DI water supply mechanism 4, and nitrogen is respectively supplied to the top surface of the indium phosphide wafer bodies 6 in the nitrogen treatment chamber 11 and DI water is supplied to the top surface of the indium phosphide wafer bodies 6 in the DI water flushing chamber 13;
it should be noted that, a nitrogen storage bottle is arranged in the nitrogen treatment chamber 11, the output end of the nitrogen storage bottle is connected with the flow control spray head 5 through a pipeline, an electromagnetic valve is arranged between the nitrogen storage bottle and the flow control spray head 5, the electromagnetic valve is mainly used for controlling the output flow of nitrogen of the flow control spray head 5, namely, after the electromagnetic valve is opened, the nitrogen in the nitrogen storage bottle can enter the flow control spray head 5 through the pipeline, and the flow control spray head 5 conveys the nitrogen into the nitrogen treatment chamber 11, so that the nitrogen directly acts on the indium phosphide wafer body 6 in the nitrogen treatment chamber 11;
the nitrogen sprayed by the flow control spray head 5 in the nitrogen treatment chamber 11 mainly has two functions, namely, before the indium phosphide wafer body 6 is cleaned, the nitrogen sprayed by the flow control spray head 5 directly acts on the top surface of the indium phosphide wafer body 6, and the indium phosphide wafer body 6 is dried after being washed by DI water;
the ultrasonic cleaning chamber 12 is internally provided with a solvent for cleaning the indium phosphide wafer body 6, the solvent is specifically anhydrous isopropanol or an organic solvent such as acetone for cleaning the indium phosphide wafer body 6, when the indium phosphide wafer body 6 is pretreated by the nitrogen treatment chamber 11, the indium phosphide wafer body can be transferred into the ultrasonic cleaning chamber 12, the ultrasonic cleaning chamber 12 is internally provided with an ultrasonic generator, and when the quantitative supply mechanism 2 completely immerses the indium phosphide wafer body 6 into the solvent in the ultrasonic cleaning chamber 12, the ultrasonic generator can be turned on for ultrasonic cleaning the indium phosphide wafer body 6;
the DI water flushing chamber 13 is internally provided with a DI water tank, a pressurizing pump is arranged in the DI water tank, the DI water tank is connected with the flow control nozzle 5 through a pipeline, an electromagnetic valve is also arranged between the DI water tank and the flow control nozzle 5, the electromagnetic valve is mainly used for controlling the flow of DI water between the DI water tank and the flow control nozzle 5, when the electromagnetic valve is opened, the DI water tank can convey the DI water into the flow control nozzle 5 through the pipeline under the action of the pressurizing pump, and the flow control nozzle 5 sprays the DI water on the top surface of the indium phosphide wafer body 6 to flush the indium phosphide wafer body 6 so as to remove the solvent remained on the surface of the indium phosphide wafer body 6;
after the solvent remained on the top surface of the indium phosphide wafer body 6 is washed clean, the quantitative supply mechanism 2 transfers the indium phosphide wafer body 6 into the nitrogen treatment chamber 11, and at this time, the nitrogen gas output by the flow control spray head 5 in the nitrogen treatment chamber 11 is mainly used for drying the indium phosphide wafer body 6;
as shown in fig. 2, a nitrogen treatment chamber 11, an ultrasonic cleaning chamber 12 and a DI water cleaning chamber 13 are arranged inside the cleaning mechanism 1 in a ring shape;
since the quantitative supply mechanism 2 simultaneously transfers a plurality of indium phosphide wafer bodies 6 among the nitrogen treatment chamber 11, the ultrasonic cleaning chamber 12 and the DI water cleaning chamber 13 in a rotating manner, that is, the quantitative supply mechanism 2 can simultaneously treat three groups of indium phosphide wafer bodies 6, and the number of the indium phosphide wafer bodies 6 in each group is also a plurality of, the quantitative supply device greatly improves the number of the indium phosphide wafer bodies 6 treated by the quantitative supply device, and ensures the working efficiency of the quantitative supply device.
As shown in fig. 1 and 3, the quantitative supply mechanism 2 comprises a hydraulic push rod 21, the bottom end of the hydraulic push rod 21 is connected with a driving motor, the driving motor is installed at the inner central position of the cleaning mechanism 1, the side surface of the hydraulic push rod 21 is fixedly connected with three rotating arms 22, one end of each of the three rotating arms 22, which is far away from the hydraulic push rod 21, is connected with a telescopic arm 23, the bottom end of each telescopic arm 23 is connected with a plurality of vacuum adsorption mechanisms 24, as shown in fig. 4, the plurality of vacuum adsorption mechanisms 24 are vertically stacked, and therefore, the vacuum adsorption mechanisms 24 can process a plurality of indium phosphide wafer bodies 6 simultaneously;
it should be noted that, the quantitative supply mechanism 2 may quantitatively supply the indium phosphide wafer body 6 to the nitrogen treatment chamber 11, the ultrasonic cleaning chamber 12 and the DI water cleaning chamber 13, specifically, the hydraulic push rod 21 firstly lifts the heights of the three rotating arms 22, so as to ensure that the three rotating arms 22 can lift the plurality of vacuum adsorption mechanisms 24 to the top of the cleaning mechanism 1, then a first group of indium phosphide wafer bodies 6 are placed on the vacuum adsorption mechanisms 24, each vacuum adsorption mechanism 24 corresponds to one indium phosphide wafer body 6, when the vacuum adsorption mechanism 24 adsorbs and fixes the indium phosphide wafer body 6, the hydraulic push rod 21 changes to reduce the heights of the three rotating arms 22, so as to ensure that the vacuum adsorption mechanism 24 can bring the indium phosphide wafer body 6 into the nitrogen treatment chamber 11, and firstly, the first group of indium phosphide wafer bodies 6 are pretreated;
after the first group of indium phosphide wafer bodies 6 are preprocessed, the hydraulic push rod 21 further lifts the heights of the three rotating arms 22, after lifting is completed, the driving motor at the inner central position of the cleaning mechanism 1 drives the three rotating arms 22 through the hydraulic push rod 21, so that the three rotating arms 22 can drive the first group of indium phosphide wafer bodies 6 to rotate anticlockwise by 120 degrees, the first group of indium phosphide wafer bodies 6 are just above the ultrasonic cleaning chamber 12, at the moment, a second group of indium phosphide wafer bodies 6 can be provided for the vacuum adsorption mechanism 24 above the nitrogen treatment chamber 11, then the first group of indium phosphide wafer bodies 6 and the second group of indium phosphide wafer bodies 6 are respectively brought into the ultrasonic cleaning chamber 12 and the nitrogen treatment chamber 11 by the quantitative supply mechanism 2, and the first group of indium phosphide wafer bodies 6 are preprocessed in the nitrogen treatment chamber 11 while the ultrasonic cleaning is carried out in the ultrasonic cleaning chamber 12;
after the first group of indium phosphide wafer bodies 6 and the second group of indium phosphide wafer bodies 6 are processed, the hydraulic push rod 21 again lifts the height of the three rotating arms 22, and then rotates anticlockwise by 120 degrees, at this time, the first group of indium phosphide wafer bodies 6 are positioned right above the DI water flushing chamber 13, the second group of indium phosphide wafer bodies 6 are positioned right above the ultrasonic flushing chamber 12, and then the third group of indium phosphide wafer bodies 6 are provided for the vacuum adsorption mechanism 24 positioned above the nitrogen treatment chamber 11;
when the quantitative supply mechanism 2 descends, the first group of indium phosphide wafer bodies 6 enter a DI water flushing chamber 13 for DI water flushing operation, the second group of indium phosphide wafer bodies 6 enter an ultrasonic cleaning chamber 12 for ultrasonic cleaning, and the third group of indium phosphide wafer bodies 6 enter a nitrogen treatment chamber 11 for pretreatment;
after the three groups of indium phosphide wafer bodies 6 are processed, the quantitative supply mechanism 2 drives the three groups of indium phosphide wafer bodies 6 to rotate by 120 degrees finally, the first group of indium phosphide wafer bodies 6 return to the upper part of the nitrogen treatment chamber 11 again, and can be dried after entering the nitrogen treatment chamber 11, and after the first group of indium phosphide wafer bodies 6 are dried, the indium phosphide wafer bodies 6 can be removed and replaced by the fourth group of indium phosphide wafer bodies 6, so that the indium phosphide wafer bodies 6 are cleaned circularly.
Example 2
As shown in fig. 5, the vacuum adsorption mechanism 24 comprises a base 241, wherein an adjusting seat 242 is fixedly connected to the middle position of the top surface of the base 241, a vacuum adsorption disc 245 is arranged at the middle position of the top surface of the adjusting seat 242, a motor is arranged in the adjusting seat 242 and close to the bottom of the vacuum adsorption disc 245, and an output shaft of the motor is fixedly connected with the center position of the bottom surface of the vacuum adsorption disc 245;
it should be noted that, the output shaft of the motor is directly fixedly connected with the center position of the bottom surface of the vacuum adsorption disc 245, so after the motor is opened, the output shaft of the motor can drive the vacuum adsorption disc 245 to rotate, and the vacuum adsorption disc 245 adsorbs the indium phosphide wafer body 6, so that the vacuum adsorption disc 245 also drives the indium phosphide wafer body 6 to rotate, when the indium phosphide wafer body 6 is in the nitrogen treatment chamber 11, the high-speed rotating indium phosphide wafer body 6 generates a larger speed difference with the top surface of the indium phosphide wafer body 6 when encountering the nitrogen sprayed by the flow control spray head 5 in the nitrogen treatment chamber 11, thus not only improving the effect of nitrogen pretreatment, but also improving the effect of nitrogen blow-drying, and in the DI water flushing chamber 13, the high-speed rotating indium phosphide wafer body 6 can make DI water on the top surface of the indium phosphide wafer body 6 generate centrifugal force, thus being beneficial to the DI water flowing rapidly on the top surface of the indium phosphide wafer body 6, improving the flushing effect of the DI water on the indium phosphide wafer body 6, and shortening the overall cleaning time of the indium phosphide wafer body 6.
Example 3
As shown in fig. 5, four telescopic rods 243 are arranged on the top surface of the adjusting seat 242 near the outer side of the vacuum adsorption plate 245, adjusting arms 244 are nested on the outer sides of the telescopic rods 243, cylindrical grooves are formed in the adjusting arms 244 and matched with the telescopic rods 243, springs are further arranged in the cylindrical grooves, one ends of the springs act on the end surfaces of the telescopic rods 243, and the adjusting arms 244 can be outwards unfolded under the action of spring force;
it should be noted that, an air pump is disposed in the adjusting seat 242, the air pump is connected with an air cavity through a pipeline, an air transmission channel is disposed in the four telescopic rods 243, one end of the air transmission channel is communicated with the air cavity, and the other end of the air transmission channel is communicated with a cylindrical groove in the adjusting arm 244;
when the indium phosphide wafer body 6 is placed on the top surface of the vacuum adsorption disc 245, the air pump is started, the air pump pumps air in the air cavity through the pipeline, so that the air cavity forms negative pressure, the air cavity is communicated with the cylindrical groove through the air transmission channel, the cylindrical groove is communicated with the negative pressure, the adjusting arm 244 overcomes the elasticity of the spring under the action of air pressure, moves towards one end of the vacuum adsorption disc 245 and acts on the end surface of the indium phosphide wafer body 6, according to the communicating vessel principle, the pressure in the cylindrical groove inside the four adjusting arms 244 is consistent, the acting force of the four adjusting arms 244 on the indium phosphide wafer body 6 is the same, the indium phosphide wafer body 6 can be fixed at the central position of the vacuum adsorption disc 245, the vacuum adsorption disc 245 works at the moment, the indium phosphide wafer body 6 is adsorbed by the air pump, the four adjusting arms 244 are closed under the action of the elasticity of the spring, the purpose of the arrangement can be guaranteed that the indium phosphide wafer body 6 is adsorbed at the central position of the vacuum adsorption disc 245, and therefore the indium phosphide wafer body 6 can be driven to rotate at a high speed by the vacuum adsorption disc 245, and the indium phosphide wafer body 6 can be guaranteed to be more stable.
As shown in fig. 6, a connecting hole 2441 is formed in the top surface of one end, far away from the telescopic rod 243, of the adjusting arm 244, a rubber stop 2442 is arranged at a position, close to the connecting hole 2441, of the top surface of the adjusting arm 244, and an arc-shaped curved surface 2443 is arranged on one side, far away from the connecting hole 2441, of the rubber stop 2442;
it should be noted that, the rubber stopper 2442 may play a role in buffering, so as to ensure that the indium phosphide wafer body 6 is not damaged when the position of the indium phosphide wafer body 6 is adjusted, the connecting hole 2441 is used to cooperate with the connecting rod 25, as shown in fig. 4 and 5, the plurality of vacuum adsorption mechanisms 24 are directly connected through the connecting rod 25, and two ends of the connecting rod 25 cooperate with the connecting holes 2441 on the two vacuum adsorption mechanisms 24 respectively;
specifically, every two vacuum adsorption mechanisms 24 are connected through two connecting rods 25, the connecting rods 25 are matched with two connecting holes 2441 in alignment, when the position of the indium phosphide wafer body 6 is adjusted by the adjusting arms 244 on the vacuum adsorption mechanisms 24, the adjusting arms 244 among the plurality of vacuum adsorption mechanisms 24 can synchronously move under the action of the connecting rods 25, so that as long as one adjusting arm 244 on one vacuum adsorption mechanism 24 in the plurality of vacuum adsorption mechanisms 24 moves in place, the adjusting arms 244 on all vacuum adsorption mechanisms 24 can be ensured to move in place, and the problem of inaccurate adjustment caused by repeated use of the adjusting arms 244 can be avoided.
Example 4
As shown in fig. 7, the flow control nozzle 5 includes a nozzle main body 51, a connecting arm 52 is fixedly connected to one side of the nozzle main body 51, a plurality of groups of nozzles 53 are installed on the bottom surface of the nozzle main body 51, and the inclination angles of the plurality of groups of nozzles 53 are different, so that when the flow control nozzle 5 sprays nitrogen or DI water to the top surface of the indium phosphide wafer body 6, the flow control nozzle 5 can uniformly spray the nitrogen or DI water to the top surface of the indium phosphide wafer body 6, thereby improving the effect of nitrogen pretreatment and drying and improving the effect of DI water flushing;
if the nozzles 53 are three groups, the innermost group of nozzles 53 is disposed vertically downward, the angle between the middle group of nozzles 53 and the nozzle body 51 is 22.5 degrees, and the angle between the outermost group of nozzles 53 and the nozzle body 51 is 45 degrees.
As shown in fig. 8, the infrared sensor 54 is fixedly connected to the center of the top surface of the main body 51, an infrared receiver matched with the infrared sensor 54 is arranged at the center of the bottom surface of the base 241, the flow control spray heads 5 with the same number as that of the single group of vacuum adsorption mechanisms 24 are arranged at the inner sides of the nitrogen gas supply mechanism 3 or the DI water supply mechanism 4, the positions of the flow control spray heads 5 and the positions of the vacuum adsorption mechanisms 24 are in one-to-one correspondence, an electric push rod is arranged at the position, close to the top surface of the main body 51, of the nitrogen gas supply mechanism 3 or the DI water supply mechanism 4, when the main body 51 is needed to be used, the electric push rod in the nitrogen gas supply mechanism 3 or the DI water supply mechanism 4 can be opened, and the electric push rod is directly connected with the connecting arm 52, so that the electric push rod can push the main body 51 to move towards the top surface of the vacuum adsorption mechanism 24 through the connecting arm 52, the cooperation of the infrared sensor 54 and the infrared receiver can ensure that the main body 51 stays at the center of the top surface of the vacuum adsorption mechanism 24, namely, that the top surface of the indium phosphide wafer body 6 stays at the center of the top surface of the vacuum adsorption mechanism 24, and the top surface of the main body 23 is also provided with the infrared receiver for the top surface of the vacuum adsorption mechanism.
The foregoing describes one embodiment of the present invention in detail, but the description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (10)
1. A dosing device for automatic cleaning of indium phosphide wafers comprising a flow control, characterized by comprising:
a cleaning mechanism (1) which is internally provided with a nitrogen treatment chamber (11), an ultrasonic cleaning chamber (12) and a DI water flushing chamber (13);
the quantitative supply mechanism (2) is arranged on the top surface of the cleaning mechanism (1), and the quantitative supply mechanism (2) simultaneously transfers a plurality of indium phosphide wafer bodies (6) between the nitrogen treatment chamber (11), the ultrasonic cleaning chamber (12) and the DI water flushing chamber (13) in a rotating mode;
a nitrogen gas supply mechanism (3) provided outside the nitrogen gas treatment chamber (11);
a DI water supply mechanism (4) provided outside the DI water flushing chamber (13);
and two groups of flow control spray heads (5) are respectively connected with the nitrogen gas supply mechanism (3) and the DI water supply mechanism (4) and respectively supply nitrogen gas to the top surface of the indium phosphide wafer body (6) in the nitrogen gas treatment chamber (11) and DI water to the top surface of the indium phosphide wafer body (6) in the DI water flushing chamber (13).
2. The dosing device for automatic cleaning of indium phosphide wafers comprising a flow control according to claim 1, characterized in that the nitrogen treatment chamber (11), ultrasonic cleaning chamber (12) and DI water flushing chamber (13) are arranged inside the cleaning mechanism (1) in a ring shape.
3. The quantitative supply device for automatic cleaning of indium phosphide wafer including flow control according to claim 2, characterized in that the quantitative supply mechanism (2) includes a hydraulic push rod (21), the bottom end of the hydraulic push rod (21) is connected with a driving motor, and the driving motor is installed at the inner center position of the cleaning mechanism (1).
4. A quantitative supply device for automatic cleaning of indium phosphide wafer including flow control according to claim 3, characterized in that the side of the hydraulic push rod (21) is fixedly connected with three rotating arms (22), one end of the three rotating arms (22) far away from the hydraulic push rod (21) is connected with a telescopic arm (23), and the bottom end of the telescopic arm (23) is connected with a plurality of vacuum adsorption mechanisms (24).
5. The dosing device for automatic cleaning of indium phosphide wafers including flow control as claimed in claim 4, wherein several of the vacuum adsorption mechanisms (24) are vertically stacked.
6. The quantitative supply device for automatically cleaning the indium phosphide wafer, which comprises a flow control according to claim 4, wherein the vacuum adsorption mechanism (24) comprises a base (241), an adjusting seat (242) is fixedly connected to the middle position of the top surface of the base (241), a vacuum adsorption disc (245) is arranged at the middle position of the top surface of the adjusting seat (242), a motor is arranged at the bottom of the adjusting seat (242) close to the vacuum adsorption disc (245), and an output shaft of the motor is fixedly connected with the center position of the bottom surface of the vacuum adsorption disc (245).
7. The quantitative supply device for automatic cleaning of indium phosphide wafer including flow control according to claim 6, wherein the top surface of the adjusting seat (242) is provided with four telescopic rods (243) near the outer side of the vacuum adsorption plate (245), and the outer sides of the telescopic rods (243) are nested with adjusting arms (244).
8. The quantitative supply device for automatically cleaning the indium phosphide wafer, which comprises a flow control device according to claim 7, wherein a connecting hole (2441) is formed in the top surface of one end, far away from the telescopic rod (243), of the adjusting arm (244), a rubber stop block (2442) is arranged at the position, close to the connecting hole (2441), of the top surface of the adjusting arm (244), and an arc-shaped curved surface (2443) is arranged on one side, far away from the connecting hole (2441), of the rubber stop block (2442).
9. The quantitative supply device for automatic cleaning of indium phosphide wafer comprising flow control according to claim 1, wherein the flow control spray head (5) comprises a spray head main body (51), one side of the spray head main body (51) is fixedly connected with a connecting arm (52), a plurality of groups of spray nozzles (53) are mounted on the bottom surface of the spray head main body (51), and the inclination angles of the plurality of groups of spray nozzles (53) are different.
10. The quantitative supply device for automatic cleaning of indium phosphide wafer including flow control according to claim 9, characterized in that the top center position of the head main body (51) is fixedly connected with an infrared sensor (54).
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| CN202311567071.5A CN117259331B (en) | 2023-11-23 | 2023-11-23 | Dosing device for automatic cleaning of indium phosphide wafers comprising a flow control |
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| CN202311567071.5A CN117259331B (en) | 2023-11-23 | 2023-11-23 | Dosing device for automatic cleaning of indium phosphide wafers comprising a flow control |
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| CN117259331B (en) | 2024-02-20 |
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