CN117257268A - Manufacturing method of intracranial pressure monitoring probe and intracranial pressure monitoring probe - Google Patents
Manufacturing method of intracranial pressure monitoring probe and intracranial pressure monitoring probe Download PDFInfo
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- CN117257268A CN117257268A CN202311571733.6A CN202311571733A CN117257268A CN 117257268 A CN117257268 A CN 117257268A CN 202311571733 A CN202311571733 A CN 202311571733A CN 117257268 A CN117257268 A CN 117257268A
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- 238000007917 intracranial administration Methods 0.000 title claims abstract description 59
- 238000012544 monitoring process Methods 0.000 title claims abstract description 48
- 239000000523 sample Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000003466 welding Methods 0.000 claims abstract description 59
- 238000007740 vapor deposition Methods 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000001514 detection method Methods 0.000 claims abstract description 23
- 238000005260 corrosion Methods 0.000 claims abstract description 20
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 18
- 239000000741 silica gel Substances 0.000 claims abstract description 18
- 238000011282 treatment Methods 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 238000004381 surface treatment Methods 0.000 claims description 13
- 239000012530 fluid Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000002318 adhesion promoter Substances 0.000 claims description 6
- 239000010407 anodic oxide Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 4
- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 9
- 230000007704 transition Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 43
- 229910000679 solder Inorganic materials 0.000 description 13
- 238000005019 vapor deposition process Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 210000001124 body fluid Anatomy 0.000 description 4
- 239000010839 body fluid Substances 0.000 description 4
- 210000003298 dental enamel Anatomy 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 241000784732 Lycaena phlaeas Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000005493 welding type Methods 0.000 description 2
- 206010048962 Brain oedema Diseases 0.000 description 1
- 206010008111 Cerebral haemorrhage Diseases 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 208000006752 brain edema Diseases 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000036544 posture Effects 0.000 description 1
- 238000004393 prognosis Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000008733 trauma Effects 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/03—Detecting, measuring or recording fluid pressure within the body other than blood pressure, e.g. cerebral pressure; Measuring pressure in body tissues or organs
- A61B5/031—Intracranial pressure
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/0247—Pressure sensors
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/0252—Load cells
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/12—Manufacturing methods specially adapted for producing sensors for in-vivo measurements
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/16—Details of sensor housings or probes; Details of structural supports for sensors
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Hematology (AREA)
- Biophysics (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Neurosurgery (AREA)
- Physics & Mathematics (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Measuring And Recording Apparatus For Diagnosis (AREA)
Abstract
The invention discloses a manufacturing method of an intracranial pressure monitoring probe and the intracranial pressure monitoring probe, wherein the method comprises the steps of welding one end of a first lead to a bonding pad of a relative pressure sensor chip to form a first welding spot; welding one end of the second wire with the other end of the first wire to form a second welding point; placing a mask or a tool on the relative pressure sensor chip; placing the pressure sensor assembly in a vapor deposition device for vapor deposition treatment to protect the metal exposure area; mounting the pressure sensor assembly into the housing and aligning the detection window of the housing; and filling the silica gel support layer into the detection window and covering the pressure sensor assembly. The first lead is used as a transition, so that an operator can conveniently weld; and meanwhile, the vapor deposition is carried out on the corrosion-prone area, so that the problem of intracranial pressure monitoring affected by corrosion is solved.
Description
Technical Field
The invention relates to the technical field of medical equipment, in particular to a manufacturing method of an intracranial pressure monitoring probe and the intracranial pressure monitoring probe.
Background
The intracranial pressure monitoring provides basis for accurately judging intracranial pressure (ICP) change conditions caused by occupancy diseases such as intracranial tumor, intracranial trauma, cerebral hemorrhage, cerebral edema and the like in clinic, and can meet the requirements of diagnosis, treatment and prognosis judgment. The miniature pressure sensor used for intracranial pressure monitoring is small in volume, and has a certain difficulty in direct welding with a lead wire when manufactured by the existing method, so that the product yield is difficult to ensure. Meanwhile, the pressure sensor chip of the intracranial pressure monitoring probe is accommodated in the shell, a silica gel supporting layer is formed on a detection window of the shell, and the intracranial pressure is conducted onto the pressure sensor chip through the silica gel supporting layer.
The water vapor transmittance of the silica gel is very high, gaps are easily formed at the contact surface between the detection window and the silica gel supporting layer, so that corrosive body fluid can enter the shell, as the internal lead usually contains a copper core, solder paste is generally used for welding, and under the condition that water vapor exists, electrochemical corrosion can occur when the tin and copper are electrified, so that the resistance of a welding spot and a copper wire can be changed; when the resistance of the area outside the pressure-sensitive window of the chip changes, the signal transmission and measurement accuracy of the internal circuit are affected. With the increase of the service time, the water vapor entering the inside of the shell increases, and the line corrosion condition is aggravated, so that the detection test precision is reduced and the intracranial pressure monitoring probe on the market is invalid, and the service time of the intracranial pressure monitoring probe on the market is generally not longer than 7 days.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides a manufacturing method of an intracranial pressure monitoring probe, which solves the problems that the welding difficulty is high, and the welded wire and welding spot are easy to corrode in the existing manufacturing method.
The invention also provides an intracranial pressure monitoring probe.
According to a first aspect of the invention, a method for manufacturing an intracranial pressure monitoring probe comprises the following steps:
welding one end of a first wire to a bonding pad of a relative pressure sensor chip to form a first welding spot, wherein the first wire is a bare wire, and the relative pressure sensor chip forms a free end through the first wire;
directly welding one end of a second wire with the other end of the first wire to form a second welding spot, wherein the second wire is an enameled wire, and one end of the second wire is a bare area;
placing a mask or tooling on the relative pressure sensor chip to cover at least a pressure sensitive film of the relative pressure sensor chip;
placing a pressure sensor assembly in vapor deposition equipment for vapor deposition treatment to protect a metal exposure area, realizing a conformal deposition layer at one time and wrapping the metal exposure area at least in a whole surrounding manner, and removing the mask or the tooling after the vapor deposition treatment is finished, wherein the pressure sensor assembly comprises the relative pressure sensor chip, the first lead wire and the second lead wire, and the metal exposure area comprises the first lead wire, the first welding point, the second welding point and the exposed area;
mounting the pressure sensor assembly into a housing and aligning a detection window of the housing;
and filling a silica gel supporting layer into the detection window and covering the detection window on the pressure sensor assembly, wherein the silica gel supporting layer is used for conducting pressure to the pressure sensor assembly.
The manufacturing method of the intracranial pressure monitoring probe at least has the following beneficial effects:
by utilizing the manufacturing method of the embodiment of the invention, after the first wire is welded with the opposite pressure sensor chip, the second wire is welded with the first wire, and compared with the method of directly welding the second wire serving as an enameled wire with the opposite pressure sensor chip and utilizing the first wire serving as a bare wire for transition, the welding treatment of operators can be better facilitated, so that the assembly efficiency and the product yield of the intracranial pressure monitoring probe are improved. Meanwhile, the area which is easy to corrode in the welding process is subjected to vapor deposition treatment, so that an anti-corrosion layer is formed to protect a first wire serving as a bare wire, a first welding point and a second welding point which are provided with soldering paste and a bare area of the second wire, the problem that the intracranial pressure monitoring is affected due to the fact that an internal circuit is corroded is solved, and even if part of corrosive body fluid enters the inside of the shell from a silica gel supporting layer, the relative pressure sensor chip can still work effectively, and the service life of the product can be guaranteed.
In addition, after the welding of the second welding spot is finished, the second lead also has a part exposed around the second welding spot, and due to the consistency factor of the welding process, the exposure deviation among batches is larger, so that the product precision of each batch is different, and especially the product precision after a period of use is caused. The pressure sensor component manufactured by the method provided by the embodiment of the invention can be effectively protected by the anti-corrosion layer, the problem of larger exposure deviation among batches can be well solved, and the consistency of the service lives of products can be improved. In addition, compared with the prior art, the material with general corrosion resistance and low price can be selected from the materials of the first wire and the second wire, such as common copper, silver or alloys and composite layers thereof.
In addition, the relative pressure sensor chip forms a free end through the first lead, and the bottom of the relative pressure sensor chip can be suspended through the first lead, so that most mechanical stress and thermal stress are isolated, the measurement accuracy is improved, and the pressure drift is reduced. Meanwhile, the first lead and the second lead are directly welded, so that the number of welding spots in the assembly manufacturing process is reduced, and the reliability of the process and the product is ensured.
According to some embodiments of the invention, prior to the step of placing the pressure sensor assembly in a vapor deposition apparatus for vapor deposition treatment to protect the metal exposed area, the intracranial pressure monitoring probe fabrication method further comprises the steps of:
and carrying out plasma surface treatment on the metal exposure area to improve the binding force of vapor deposition molecules and the surface of the metal exposure area.
According to some embodiments of the invention, the method for manufacturing an intracranial pressure monitoring probe further comprises the steps of:
after the plasma surface treatment is completed, a primer or adhesion promoter suitable for vapor deposition of molecular materials is applied to the exposed metal areas.
According to some embodiments of the invention, the plasma surface treatment comprises atmospheric glow discharge or vacuum etching.
According to some embodiments of the invention, the plasma surface treated working gas comprises oxygen, argon, carbon tetrafluoride or sulfur hexafluoride.
According to some embodiments of the invention, prior to the step of placing the pressure sensor assembly in a vapor deposition apparatus for vapor deposition treatment to protect the metal exposed area, the intracranial pressure monitoring probe fabrication method further comprises the steps of:
and immersing the pressure sensor assembly into a cleaning working fluid to clean the metal exposure area, and cleaning the residual cleaning working fluid after the cleaning is completed.
According to some embodiments of the invention, the metal exposure area further comprises bare wiring of the relative pressure sensor chip.
According to some embodiments of the invention, the vapor deposition process comprises chemical vapor deposition, physical vapor deposition, or atomic layer deposition, the chemical vapor deposition material comprises parylene, silicon oxide, silicon carbide, or silicon nitride, the physical vapor deposition material comprises silicon oxide, silicon carbide, silicon nitride, gold, silver, platinum, or aluminum, and the atomic layer deposition material comprises aluminum oxide.
An intracranial pressure monitoring probe according to an embodiment of the second aspect of the invention, the intracranial pressure monitoring probe comprising:
a relative pressure sensor chip;
the first lead is provided with a chip connecting end and a lead connecting end, the chip connecting end is welded with the opposite pressure sensor chip and forms a first welding point, the first lead is arranged as a bare wire, and the opposite pressure sensor chip forms a free end through the first lead;
the second wire is arranged as an enameled wire, one end of the second wire is an exposed area, and the exposed area and the wire connection end are directly welded to form a second welding spot;
the anti-corrosion layer is arranged to realize a conformal deposition layer through vapor deposition equipment at one time and is at least entirely deposited on the first lead, the first welding spot, the second welding spot and the exposed area in a surrounding manner;
the shell is provided with a detection window and a wire connecting port, one end of the relative pressure sensor chip, one end of the second wire, the first wire and the deposition layer are all arranged in the shell, the other end of the second wire extends to the outside through the wire connecting port, and an air passage communicated with the wire connecting port is formed below the relative pressure sensor;
and the silica gel support layer is filled in the detection window and covers the relative pressure sensor chip.
According to some embodiments of the invention, the shell is made of titanium or titanium alloy, and an anodic oxide layer is formed on each outer surface of the shell.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a flow chart of a method of manufacturing an intracranial pressure monitoring probe in accordance with one embodiment of the present invention;
FIG. 2 is a schematic diagram of an intracranial pressure monitoring probe according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure of a relative pressure sensor chip according to one embodiment of the present invention;
FIG. 4 is a schematic illustration of a vapor deposition process according to one embodiment of the invention;
FIG. 5 is a flow chart of a method of fabricating an intracranial pressure monitoring probe in accordance with a preferred embodiment of the present invention;
FIG. 6 is a schematic view of an intracranial pressure monitoring probe in accordance with another embodiment of the present invention.
Reference numerals:
a relative pressure sensor chip 110; a first wire 120; a second wire 130; a first pad 140; a second pad 150; a housing 160; a silicone sheath 170; a temperature sensor 180; a third wire 190;
a pad 210; an internal circuit 220; a pressure sensitive film 230;
vapor deposition apparatus 310.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings, in which it is apparent that the embodiments described below are some, but not all embodiments of the invention.
Referring to fig. 1, a flowchart of a method for manufacturing an intracranial pressure monitoring probe according to an embodiment of the invention is shown, and the method for manufacturing the intracranial pressure monitoring probe includes the following steps:
step S110: welding one end of the first wire 120 to the pad 210 of the opposite pressure sensor chip 110 to form a first welding spot 140, wherein the first wire 120 is a bare wire, and the opposite pressure sensor chip 110 forms a free end through the first wire 120;
step S120: directly welding one end of the second wire 130 with the other end of the first wire 120 to form a second welding spot 150, wherein the second wire 130 is an enameled wire, and one end of the second wire 130 is a bare area;
step S130: placing a mask or tool over the opposing pressure sensor die 110 to cover at least the pressure sensitive film 230 of the opposing pressure sensor die 110;
step S140: placing a pressure sensor assembly in the vapor deposition apparatus 310 for a vapor deposition process to protect the metal exposure area, implementing a conformal deposition layer once and wrapping the metal exposure area at least entirely, and removing a mask or tool after the vapor deposition process is completed, the pressure sensor assembly including a relative pressure sensor die, a first lead 120, and a second lead 130, the metal exposure area including the first lead 120, the first solder joint 140, the second solder joint 150, and the bare area;
step S150: mounting the pressure sensor assembly into the housing 160 and aligning the detection window of the housing 160;
step S160: the silicone jacket 170 is filled into the detection window and covers the pressure sensor assembly, the silicone jacket 170 being configured to conduct pressure to the pressure sensor assembly.
Specifically, as can be seen from fig. 2, after step S110 is performed, a first solder joint 140 is formed by soldering between the first wire 120 and the pad 210 of the opposite pressure sensor chip 110, and specifically referring to fig. 3, the solder paste of the first solder joint 140 covers the pad 210 of the opposite pressure sensor chip 110. Meanwhile, after the first welding spot 140 is formed, the opposite pressure sensor chip 110 forms a free end through the first wire 120, that is, the first wire 120 can ensure that the bottom of the opposite pressure sensor chip 110 is suspended. It should be noted that, the relative pressure sensor chip 110 performs measurement based on the atmospheric pressure, so the inner side of the relative pressure sensor chip 110 according to the embodiment of the present invention needs to be in contact with the atmosphere, so the free end is formed to exactly meet the requirement of the assembly of the relative pressure sensor chip 110.
With continued reference to fig. 2, after step S120 is performed, the other end of the first wire 120 is soldered to one end of the second wire 130 to form a second solder joint 150. The second solder joint 150 may be formed by an omni-directional solder ball bond, i.e., the solder is fully encapsulated to encapsulate the exposed second wire 130 ends. The second wires 130 are preferably a plurality of sequentially fixed flat cable structures. It should be appreciated that after the second bond 150 is bonded, the second wire 130 also has a portion exposed around the second bond 150, and the exposure deviation between batches is large due to the bonding process consistency, which results in different product precision from batch to batch, especially after a period of product use.
Further, as shown in fig. 2, the second wire 130 is configured as an enamel wire, the middle portion of which is wrapped with an insulating layer, while the end portion is exposed, while the first wire 120 is a pure bare wire. In order to ensure that the welded internal circuit is not affected by the permeation of water vapor in actual use, steps S130 and S140 are performed.
Referring specifically to FIG. 3, a pressure sensitive membrane 230 is disposed on the opposing pressure sensor chip 110, and the pressure sensitive membrane 230 is configured to receive the transmitted intracranial pressure, so that the internal circuit 220 can convert the intracranial pressure into a corresponding pressure value. The vapor deposition process is characterized in that the molecular material is uniformly deposited on all surfaces, and the pressure-sensitive property is affected if the thickness of the vapor deposited on the pressure-sensitive film 230 exceeds a certain threshold. Therefore, the pressure sensitive film 230 needs to be protected from the influence of the vapor deposition before the vapor deposition process. Specifically, the pressure-sensitive film 230 may be protected by attaching a mask of a corresponding shape before vapor deposition, or by designing a suitable tool or fixture to cover the region where vapor deposition is not required. It should be noted that, the mask or the tooling may cover the whole of the relative pressure sensor chip 110.
With continued reference to fig. 4, after the mask or tool is placed, the pressure sensor assembly is placed in a vapor deposition apparatus 310 for a vapor deposition process to achieve a conformal deposition layer at one time, and after completion, the mask or tool is removed. By adopting the vapor deposition method, the corrosion resistance of the circuit can be greatly improved, and meanwhile, the vapor deposition is characterized in that the complete protection can be realized, namely, all exposed surfaces (including the metal exposure area and the periphery thereof) can form an anti-corrosion layer. Therefore, the corrosion of corrosive body fluid to the metal exposed area in the circuit can be avoided, and the biocompatibility and reliability can be ensured.
Further, the steps S150 and S160 are continued to seal the vapor deposited pressure sensor assembly into the housing 160 and fill the silicone jacket 170 for pressure transmission to the pressure sensor assembly. Specifically, referring to FIG. 1, pressure sensitive membrane 230 sets a detection window oriented with respect to housing 160 to facilitate acquisition of intracranial pressure information; the second wire 130 may extend from the wire connection port to the outside; the silica gel protective layer 170 is embedded and filled in the detection window and covers the opposite pressure sensor chip 110.
By installing the pressure sensor assembly of an embodiment of the present invention into the housing 160, indirect contact of the pressure sensor assembly with the intracranial pressure can be achieved through the detection window, thereby obtaining the intracranial pressure value and achieving intracranial pressure monitoring. By providing the silicone sheath 170, direct contact with the cranium can be achieved to transfer pressure to the pressure sensor assembly.
In this embodiment, by using the manufacturing method of the embodiment of the present invention, after the first wire 120 is welded to the opposite pressure sensor chip 110, the second wire 130 is welded to the first wire 120, so that the welding process by an operator can be better facilitated, and the assembly efficiency and the product yield of the intracranial pressure monitoring probe can be improved, compared with the case that the second wire 130 as an enameled wire is directly welded to the opposite pressure sensor chip 110, and the first wire 120 as a bare wire is used for transition. Meanwhile, the region which is easy to corrode in the welding process is subjected to vapor deposition treatment, so that an anti-corrosion layer is formed to protect the first lead 120 which is used as a bare wire, the first welding point 140 and the second welding point 150 which are provided with soldering paste and the bare region of the second lead 130, the problem that the intracranial pressure monitoring is affected due to the corrosion of an internal circuit is solved, and even if part of corrosive body fluid enters the inside of the shell 160 from the silica gel supporting layer 170, the relative pressure sensor chip 110 can still effectively work, and the service life of a product can be ensured.
The pressure sensor component manufactured by the method provided by the embodiment of the invention can be effectively protected by the anti-corrosion layer, the problem of larger exposure deviation among batches can be well solved, and the consistency of the service lives of products can be improved. In addition, the materials of the first wire 120 and the second wire 130 may be selected from materials having general corrosion resistance and low cost, such as common copper, silver or alloys thereof, composite layers, and the like, compared with the prior art.
In addition, since the relative pressure sensor chip 110 forms a free end through the first wire 120, the first wire 120 in the embodiment of the invention can ensure that the bottom of the relative pressure sensor chip 110 is suspended, thereby isolating most of mechanical stress and thermal stress, improving measurement accuracy and reducing pressure drift. Meanwhile, the number of welding spots in the assembly manufacturing process is reduced by directly welding the first wire 120 and the second wire 130, and the reliability of the process and the product is ensured.
According to some embodiments of the present invention, as shown in fig. 5, before the step of placing the pressure sensor assembly in the vapor deposition apparatus 310 for vapor deposition treatment to protect the metal exposure area, the intracranial pressure monitoring probe fabrication method further comprises the steps of:
step S210: and carrying out plasma surface treatment on the metal exposure area to improve the binding force of vapor deposition molecules and the surface of the metal exposure area.
Referring to fig. 5, it can be understood that step S210 of the present embodiment, that is, plasma surface treatment of the metal exposure region, may be performed before the vapor deposition process, that is, before step S140 is performed. By performing a plasma surface treatment operation, the bonding force of vapor deposition molecules to the surface of the metal exposed region can be improved, and the anti-corrosion layer formed by vapor deposition can be tightly bonded with the pressure sensor assembly to achieve the desired protective effect.
According to some embodiments of the present invention, as shown in fig. 5, the method for manufacturing an intracranial pressure monitoring probe further comprises the steps of:
step S310: after the plasma surface treatment is completed, a primer or adhesion promoter suitable for vapor deposition of molecular materials is applied to the exposed areas of the metal.
Referring to fig. 5, it can be understood that after the plasma surface treatment is completed, i.e., after step S210 is performed, step S310 of the present embodiment may be performed, i.e., the metal exposure area is coated with a primer or adhesion promoter suitable for vapor deposition of molecular materials. In particular, the means of applying the primer or adhesion promoter includes dipping, brushing, spraying, or evaporative deposition, among others.
Optionally, the plasma surface treatment mode comprises normal pressure glow discharge or vacuum etching.
Optionally, the plasma surface treated working gas comprises oxygen, argon, carbon tetrafluoride or sulfur hexafluoride. In some other embodiments, the working gas may also employ a combination of the above-described gases.
According to some embodiments of the present invention, as shown in fig. 5, before the step of placing the pressure sensor assembly in the vapor deposition apparatus 310 for vapor deposition treatment to protect the metal exposure area, the intracranial pressure monitoring probe fabrication method further comprises the steps of:
step S410: immersing the pressure sensor assembly in a cleaning working fluid to clean the metal exposure area, and cleaning the residual cleaning working fluid after the cleaning is completed.
Referring to fig. 5, it can be understood that, before the vapor deposition process is performed, that is, before step S140 is performed, step S410 of the present embodiment may be performed, that is, the pressure sensor assembly is immersed in the cleaning solution to clean the metal exposed area to remove the greasy dirt on the surface of the substrate, and then the residual cleaning solution is rinsed with deionized water and dried.
Optionally, the cleaning working fluid adopts organic solvents such as acetone, isopropanol or alcohol.
Optionally, the cleaning solution is heated prior to immersing the pressure sensor assembly in the cleaning solution to clean the metal exposed area. It can be understood that the heated cleaning working fluid can accelerate the cleaning speed to a certain extent, thereby improving a certain cleaning effect.
Further, ultrasonic-assisted cleaning is used when cleaning the metal-exposed area. The ultrasonic auxiliary cleaning can strengthen the oil removal effect to a certain extent.
According to some embodiments of the present invention, the metal exposure area further includes an exposed line of the opposing pressure sensor chip 110, i.e., by a single vapor deposition process, and the exposed line of the opposing pressure sensor chip 110 and its periphery may also be covered with an anti-corrosion layer (only insulating material).
According to some embodiments of the invention, the vapor deposition process includes chemical vapor deposition, physical vapor deposition, or atomic layer deposition.
Further, the chemical vapor deposited deposition material comprises parylene, silicon oxide, silicon carbide or silicon nitride, the physical vapor deposited deposition material comprises silicon oxide, silicon carbide, silicon nitride, gold, silver, platinum or aluminum, and the atomic layer deposited deposition material comprises aluminum oxide.
Specifically, for the anticorrosive layer formed by vapor deposition treatment, the thickness of the anticorrosive layer can have different specifications according to different materials, and in general, for polymeric polymer materials such as parylene, the thickness of the anticorrosive layer can be 0.1 to 10 micrometers; for inorganic materials such as alumina, silicon nitride, and silicon carbide, the thickness of the anti-corrosion layer may be 50 nm to 500 nm.
It should be noted that, fig. 5 is a flowchart of a preferred embodiment provided by the present invention, and implementation steps of the preferred embodiment may be understood as follows: the welding between the relative pressure sensor chip 110, the first wire 120 and the second wire 130 is completed through the step S110 and the step S120 to primarily obtain a pressure sensor assembly; then, step S410, step S210, step S310, step S130 and step S140 are sequentially performed to sequentially complete the cleaning process, the plasma surface process, the primer or adhesion promoter coating, the mask or tool attaching and the vapor deposition process, and finally, step S150 and step S160 are performed to assemble the vapor deposited pressure sensor assembly into the case 160 and cover the silicone support layer 170. It will be appreciated that the preferred embodiment is only one of several examples, and thus, step S410, step S210 and step S130 are performed as a plurality of steps performed between step S120 and step S140, the order of execution being out of order.
In addition, as shown in fig. 2, the embodiment of the present invention further provides an intracranial pressure monitoring probe, including: the pressure sensor chip 110, the first lead 120, the second lead 130, the corrosion protection layer, the housing 160, and the silicone support 170. The first wire 120 has a chip connection end and a wire connection end, the chip connection end is welded with the opposite pressure sensor chip 110 and forms a first welding spot 140, the first wire 120 is provided as a bare wire, and the opposite pressure sensor chip 110 forms a free end through the first wire 120; the second wire 130 is set as an enameled wire, one end of the second wire 130 is an exposed area, and the exposed area and the wire connection end are directly welded to form a second welding spot 150; the anti-corrosion layer is configured to be a deposition layer that is conformally deposited by the vapor deposition apparatus 310 at a time, and is deposited at least entirely around the first conductive line 120, the first solder joint 140, the second solder joint 150, and the exposed area; the casing 160 is provided with a detection window and a wire connection port, one end of the relative pressure sensor chip 110, one end of the second wire 130, the first wire 120 and the deposition layer are all arranged in the casing 160, the other end of the second wire 130 extends to the outside through the wire connection port, and an air passage communicated with the wire connection port is formed below the relative pressure sensor; the silica gel supporting layer 170 fills in the detection window and covers the opposite pressure sensor chip 110.
It should be noted that, the silica gel supporting layer 420 is embedded in one side of the pressure sensor chip 110, and the other side is located in the air passage communicated with the wire connection port. It should be noted that, the relative pressure sensor chip 110 performs measurement based on the atmospheric pressure, so the inner side of the relative pressure sensor chip 110 according to the embodiment of the present invention needs to be in contact with the atmosphere, i.e. suspended into the air passage. The embodiment of the invention ensures good operation of the relative pressure sensor chip 110 and can significantly reduce the cost of the product compared with the absolute pressure sensor chip.
It is to be understood that the pressure sensor assembly of the present embodiment includes, but is not limited to, a relative pressure sensor chip 110, a first wire 120, and a second wire 130. Specifically, the relative pressure sensor chip 110 may be a strain type pressure sensor, a capacitance type pressure sensor, or a piezoelectric type pressure sensor, preferably a piezoresistive type pressure sensor.
Alternatively, the first wire 120 may be a bare wire such as a gold wire, a silver-plated copper wire, a gold-plated copper wire, a silver-copper alloy wire, or the like. The second wire 130 is preferably a commercially available copper core enamel wire, but is not limited thereto. The first welding spot 140 or the second welding spot 150 may be welded by ultrasonic bonding, solder paste welding, resistance welding, laser soldering, or the like. The invention can effectively avoid the corrosion of each wire and welding spot, and has more obvious effect on materials such as copper, tin, silver and the like which are easy to corrode.
Further, the first conductive wire 120 has better flexibility than the second conductive wire 130, and is more convenient to be welded to the opposite pressure sensor chip 110, thereby reducing the welding difficulty and improving the assembly efficiency. The greater flexibility of the first wire 120 means that it has greater bending capability, i.e., is more flexible to operate, under the same force. That is, the first conductor 120 is a relatively "soft wire" and the second conductor 130 is a relatively "hard wire". The first conductive line 120 and the second conductive line 130 may be made of different materials to achieve different flexibility, or the first conductive line 120 may be thinner when the same materials are used. In addition, in the embodiment shown in fig. 2, the first conductive wire 120 and the second conductive wire 130 are linear, and may also take various curved forms to achieve different postures with respect to the pressure sensor chip 110, which is not limited thereto.
Furthermore, according to some embodiments of the present invention, as shown in fig. 2, the core diameter of the second wire 130 is larger than the diameter of the first wire 120. In particular, referring to fig. 2, it can be appreciated that by providing the first wire 120 with a smaller diameter than the core material of the second wire 130, the first wire 120 is more flexible and less likely to break. In some embodiments, the copper core diameter (neglecting the lacquer layer) of the second wire 130 is 20 micrometers to 200 micrometers and the diameter of the first wire 120 is 10 micrometers to 100 micrometers. Further, the length of the first conductive line 120 is 0.2 mm to 2 mm, and the length of the second conductive line 130 is 0.3 m to 3 m.
Preferably, the second wire 130 may be a direct-welding type enamel wire, and when the direct-welding type enamel wire is used, the second wire 130 is not required to be subjected to a paint removing operation; in some other embodiments, when the second wire 130 is a non-straight wire, the stripping operation may be performed by laser stripping, paint stripper dipping, mechanical stripping, or the like.
With further reference to fig. 3, the first conductive lines 120 and the second conductive lines 130 are provided in plurality, and the number of the first conductive lines 120 and the second conductive lines 130 is the same. For the opposite pressure sensor chip 110 requiring external power supply, one power supply line must be connected, and two positive and negative output lines are required, so that three first and second wires 120 and 130 are required, respectively. It is understood that the three first wires 120 are soldered to the pads 210 of the opposite pressure sensor chip 110 in parallel, and each of the pads 210 is electrically connected to the internal circuit 220 by a different wire.
Optionally, as shown in fig. 6, the intracranial pressure monitor further comprises: a temperature sensor 180, a third wire 190. The temperature sensor 180 is disposed in the housing 160; one end of the third wire 190 is electrically connected to the temperature sensor 180, and the other end extends to the outside through the wire connection port. It will be appreciated that by providing the temperature sensor 180, monitoring of intracranial temperature conditions may be further achieved on the basis of monitoring intracranial pressure.
In some embodiments, the third wire 190 is provided in plurality. Further, if the temperature sensor 180 employs a thermistor, two wires need to be disposed at both ends of the thermistor to provide a voltage, i.e., two wires need to be disposed for the third wire 190.
Further, the housing 160 is preferably made of titanium or a titanium alloy, and an anodic oxide layer is formed on each outer surface of the housing. Because the anodic oxide layer has rich pore structures on the microscopic level, the microscopic bonding area between the outer surface around the detection window and the silica gel supporting layer 170 is enlarged, and the anodic oxide layer and the silica gel interface form good chemical bond (free hydroxyl is bonded with silicon hydroxyl), so that the adhesiveness is remarkably improved. Meanwhile, the anodic oxide layer mainly comprising titanium oxide belongs to a semiconductor material, has extremely low conductivity, and can effectively avoid the generation of a short circuit effect.
It will be appreciated that in the embodiment of fig. 2 and 6, the housing 160 has a regular square configuration, which is only schematically illustrated, and that variations of the housing 160 are contemplated by those skilled in the art based on this, and the invention is not limited thereto. In addition, fig. 2 and 6 only illustrate the probe portion of the intracranial pressure monitor, and other portions such as a host computer, a drainage tube, etc. can refer to the existing and improved technology.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. The manufacturing method of the intracranial pressure monitoring probe is characterized by comprising the following steps of:
welding one end of a first wire to a bonding pad of a relative pressure sensor chip to form a first welding spot, wherein the first wire is a bare wire, and the relative pressure sensor chip forms a free end through the first wire;
directly welding one end of a second wire with the other end of the first wire to form a second welding spot, wherein the second wire is an enameled wire, and one end of the second wire is a bare area;
placing a mask or tooling on the relative pressure sensor chip to cover at least a pressure sensitive film of the relative pressure sensor chip;
placing a pressure sensor assembly in vapor deposition equipment for vapor deposition treatment to protect a metal exposure area, realizing a conformal deposition layer at one time and wrapping the metal exposure area at least in a whole surrounding manner, and removing the mask or the tooling after the vapor deposition treatment is finished, wherein the pressure sensor assembly comprises the relative pressure sensor chip, the first lead wire and the second lead wire, and the metal exposure area comprises the first lead wire, the first welding point, the second welding point and the exposed area;
mounting the pressure sensor assembly into a housing and aligning a detection window of the housing;
and filling a silica gel supporting layer into the detection window and covering the detection window on the pressure sensor assembly, wherein the silica gel supporting layer is used for conducting pressure to the pressure sensor assembly.
2. The method of manufacturing an intracranial pressure monitoring probe according to claim 1, wherein prior to the step of placing the pressure sensor assembly in a vapor deposition apparatus for vapor deposition treatment to protect the metal exposed area, the method further comprises the steps of:
and carrying out plasma surface treatment on the metal exposure area to improve the binding force of vapor deposition molecules and the surface of the metal exposure area.
3. The method of manufacturing an intracranial pressure monitoring probe as recited in claim 2, further comprising the steps of:
after the plasma surface treatment is completed, a primer or adhesion promoter suitable for vapor deposition of molecular materials is applied to the exposed metal areas.
4. The method for manufacturing the intracranial pressure monitoring probe according to claim 2, wherein the plasma surface treatment mode comprises normal pressure glow discharge or vacuum etching.
5. The method of claim 2, wherein the working gas for plasma surface treatment comprises oxygen, argon, carbon tetrafluoride or sulfur hexafluoride.
6. The method of manufacturing an intracranial pressure monitoring probe according to claim 1, wherein prior to the step of placing the pressure sensor assembly in a vapor deposition apparatus for vapor deposition treatment to protect the metal exposed area, the method further comprises the steps of:
and immersing the pressure sensor assembly into a cleaning working fluid to clean the metal exposure area, and cleaning the residual cleaning working fluid after the cleaning is completed.
7. The method of any one of claims 1 to 6, wherein the metal exposure area further comprises bare wiring of the relative pressure sensor chip.
8. The method according to any one of claims 1 to 6, wherein the vapor deposition treatment comprises chemical vapor deposition, physical vapor deposition or atomic layer deposition, the chemical vapor deposition comprises parylene, silicon oxide, silicon carbide or silicon nitride, the physical vapor deposition comprises silicon oxide, silicon carbide, silicon nitride, gold, silver, platinum or aluminum, and the atomic layer deposition comprises aluminum oxide.
9. An intracranial pressure monitoring probe, the intracranial pressure monitoring probe comprising:
a relative pressure sensor chip;
the first lead is provided with a chip connecting end and a lead connecting end, the chip connecting end is welded with the opposite pressure sensor chip and forms a first welding point, the first lead is arranged as a bare wire, and the opposite pressure sensor chip forms a free end through the first lead;
the second wire is arranged as an enameled wire, one end of the second wire is an exposed area, and the exposed area and the wire connection end are directly welded to form a second welding spot;
the anti-corrosion layer is arranged to realize a conformal deposition layer through vapor deposition equipment at one time and is at least entirely deposited on the first lead, the first welding spot, the second welding spot and the exposed area in a surrounding manner;
the shell is provided with a detection window and a wire connecting port, one end of the relative pressure sensor chip, one end of the second wire, the first wire and the deposition layer are all arranged in the shell, the other end of the second wire extends to the outside through the wire connecting port, and an air passage communicated with the wire connecting port is formed below the relative pressure sensor;
and the silica gel support layer is filled in the detection window and covers the relative pressure sensor chip.
10. The intracranial pressure monitoring probe as recited in claim 9, wherein the housing is made of titanium or titanium alloy, and an anodic oxide layer is formed on each outer surface of the housing.
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| US20090218643A1 (en) * | 2005-11-01 | 2009-09-03 | Hitach, Ltd. | Semiconductor Pressure Sensor |
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| CN113080922A (en) * | 2021-03-22 | 2021-07-09 | 清华大学深圳国际研究生院 | Packaging structure and method of catheter type intracranial pressure measuring probe |
| CN116350202A (en) * | 2023-04-17 | 2023-06-30 | 深圳长久康联生物科技有限公司 | Intracranial pressure probe and manufacturing method thereof |
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| US20090218643A1 (en) * | 2005-11-01 | 2009-09-03 | Hitach, Ltd. | Semiconductor Pressure Sensor |
| KR20110113482A (en) * | 2010-04-09 | 2011-10-17 | (주)비엠알테크놀러지 | Manufacturing method of x-ray image sensor by direct deposition |
| CN110279409A (en) * | 2019-07-29 | 2019-09-27 | 成都拓蓝精创医学技术有限公司 | A kind of probe encapsulating structure of human pressure's measurement sensor |
| CN113080922A (en) * | 2021-03-22 | 2021-07-09 | 清华大学深圳国际研究生院 | Packaging structure and method of catheter type intracranial pressure measuring probe |
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