CN117253829B - Control method and system for ultra-thin wafer ring removal - Google Patents
Control method and system for ultra-thin wafer ring removal Download PDFInfo
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- 235000012431 wafers Nutrition 0.000 claims abstract description 121
- 230000008569 process Effects 0.000 claims abstract description 70
- 238000012546 transfer Methods 0.000 claims description 44
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- 238000004140 cleaning Methods 0.000 claims description 27
- 239000002699 waste material Substances 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 13
- 238000001179 sorption measurement Methods 0.000 claims description 13
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 13
- 238000005286 illumination Methods 0.000 claims description 10
- 230000001960 triggered effect Effects 0.000 claims description 9
- 239000002313 adhesive film Substances 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 abstract description 8
- 230000000875 corresponding effect Effects 0.000 description 20
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- 230000002159 abnormal effect Effects 0.000 description 4
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- 241001391944 Commicarpus scandens Species 0.000 description 1
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- 238000012797 qualification Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Abstract
The invention belongs to the technical field of ultra-thin wafer ring removal, and particularly relates to a control method and a system for ultra-thin wafer ring removal. The invention can realize timely intervention treatment on possible fault conditions in each operation process, and perform omnibearing full-flow fault monitoring and treatment, thereby obviously reducing the risk of scrapping products due to the problems of breakage, scratch and the like, effectively reducing the fault rate of ring removal of ultrathin wafers and maximally avoiding economic loss.
Description
Technical Field
The invention belongs to the technical field of ultra-thin wafer ring removal, and particularly relates to a control method and a control system for ultra-thin wafer ring removal.
Background
When chips are processed, the thickness of the wafer corresponding to the chips is thin (in the order of tens of micrometers), and when the thin wafer is conveyed, the wafer is possibly broken due to shaking of equipment or people and improper operation. For this reason, it is common to process the wafer to a thinner thickness in the middle, while the remaining periphery (i.e., the outer periphery) still maintains a thicker thickness of several hundred microns (referred to as a thick ring), thereby strengthening the wafer strength; and a film is generally disposed on the surface of the wafer to protect the wafer from scratches during handling and the like. But in practice it is necessary to remove the thick ring to obtain a thinner wafer.
However, for an ultrathin wafer, multiple processes such as cutting and ring removal are needed in the ring removal processing process of the thick ring, and after the ultrathin wafer is processed by the ring removal method in the prior art, the problem that the thick ring cannot be completely removed can occur, so that the thick ring is broken in the removal process; if the thick ring is broken during ring removal, the current product is easy to discard, and the problem that the broken wafer or fragments of the thick ring are scratched during ring removal of the subsequent product can be caused. And, when the ultra-thin wafer is in the ring-removing processing, the risk that the ultra-thin wafer is broken or even scrapped due to uneven surface of a workbench or abnormal photoresist stripping and the like is more likely to occur in the ring-removing process.
It should be noted that this section of the disclosure only provides a background related to the present disclosure, and does not necessarily constitute prior art or known technology.
Disclosure of Invention
The invention aims to overcome the defects that the prior art has a large number of expensive ultrathin wafers and is easy to break, scratch the wafers and the like, so that the product is scrapped at a large risk and serious economic loss occurs.
In order to achieve the above object, the present invention provides a control method for removing a loop of an ultra-thin wafer, comprising sequentially performing a cutting operation, a cleaning operation, a UV-dechucking operation, a loop removing operation, and an operation of transferring a thick loop performed after the loop removing operation is completed to a waste box and an operation of transferring an ultra-thin wafer to a qualified wafer box, and a transfer instruction triggered according to any one of the acquired operation instructions, the transfer instruction being performed before the corresponding operation instruction is performed.
And the control method for the ultra-thin wafer ring removal further comprises the following steps:
in the process of executing the conveying instruction, acquiring a vacuum value at the current moment in a vacuum chuck for adsorbing the ultrathin wafer in real time; judging whether the vacuum value at the current moment is lower than the preset vacuum lower limit value or not in real time based on the vacuum value at the current moment and the preset vacuum lower limit value, if yes, sending a first alarm signal, executing a fault handling procedure instruction of the conveying arm, and marking that the current conveying instruction is finished after the fault handling procedure instruction of the conveying arm is finished;
in the process of executing UV de-gelling operation, acquiring a UV energy value at the current moment in real time; based on the current moment UV energy value and a preset UV energy lower limit value, judging whether the current moment UV energy value is lower than the preset UV energy lower limit value in real time, if yes, sending a second alarm signal, executing a UV debonder failure treatment procedure instruction, and marking that the current UV debonder operation is completed after the UV debonder failure treatment procedure instruction is completed;
in the operation process of executing ring removing operation and transferring the thick ring to the waste box, the reflected beam intensity at the current moment of at least three positions of the thick ring is obtained in real time, whether the reflected beam intensity at the current moment accords with the preset reflected beam intensity range or not is judged in real time based on the reflected beam intensity at the current moment and the preset reflected beam intensity range, if not, a third alarm signal is sent, a corresponding operation failure treatment procedure instruction is executed, and after the corresponding operation failure treatment procedure instruction is completed, the current operation is marked as being completed; wherein the respective operation failure handling procedure instruction includes a ring removal failure handling procedure instruction or a thick ring transfer failure handling procedure instruction.
In some preferred embodiments of the present invention, the handling arm failure handling procedure instruction includes executing a corresponding operation retry instruction first and then executing a manual operation instruction.
In some preferred embodiments of the present invention, the UV debonder failure handling procedure instruction includes performing a UV retry instruction first and then performing a manual transfer instruction, where the manual transfer instruction includes manually removing the ultra-thin wafer at the current time and transferring to the debonder failure wafer box.
In some preferred embodiments of the present invention, the ring removal failure handling procedure instruction includes performing a ring removal retry instruction first, marking as a thick ring fracture when the current reflected beam intensity of at least one of the positions does not conform to a preset reflected beam intensity range according to the current reflected beam intensities of at least three positions acquired in real time and the preset reflected beam intensity range, and performing a manual ring removal instruction when the thick ring fracture occurs.
In some preferred embodiments of the present invention, the thick ring transition failure handling procedure instruction includes restarting the irradiation beam, marking as false alarm when the reflected beam intensities at the current moments at the at least two positions of the thick ring meet the preset reflected beam intensity range according to the reflected beam intensities at the current moments at the different positions of the thick ring and the preset reflected beam intensity range, and continuing to execute the current operation, and if not, executing the manual transition thick ring instruction and the thick ring transition retry instruction.
In some preferred embodiments of the present invention, the process of executing the handling arm failure handling process instruction includes:
s101, closing vacuum of a vacuum chuck, and driving a conveying arm to lift and move along a direction away from an ultrathin wafer;
s102, executing a conveying retry instruction, wherein the conveying retry instruction comprises: transferring the conveying arm to a target adsorption position, and opening vacuum of the vacuum chuck to adsorb the ultrathin wafer again; the vacuum value at the current moment in the vacuum chuck is obtained in real time in the re-adsorption process;
based on the current time vacuum value and a preset vacuum lower limit value, judging whether the current time vacuum value is lower than the preset vacuum lower limit value in real time;
if yes, the retry operation of S101-S102 is executed, and a manual mode instruction is executed under the condition that the vacuum value at the current moment is still lower than the preset vacuum lower limit value after the retry operation is executed twice, wherein the manual mode instruction comprises a manual conveying waiting instruction and a manual conveying completion instruction sent by a user is acquired in real time;
if not, continuing to execute the current conveying instruction until the completion.
In some preferred embodiments of the present invention, the process of executing the UV debonder failure handling procedure instruction comprises:
S201, turning off a UV irradiation lamp source;
s202, executing a UV retry instruction, wherein the UV retry instruction comprises restarting a UV irradiation lamp source to irradiate again; the UV energy value at the current moment is obtained in real time in the re-irradiation process; based on the current moment UV energy value and a preset UV energy lower limit value, judging whether the current moment UV energy value is lower than the preset UV energy lower limit value or not in real time;
if yes, executing S201, and then executing a manual transfer instruction, wherein the manual transfer instruction comprises manually taking down an ultrathin wafer at the current moment and transferring the ultrathin wafer to a wafer box with a failure in debonding, and marking that a UV debonding failure treatment procedure instruction is completed after completion;
if not, continuing to execute the current UV glue-breaking instruction until finishing.
In some preferred embodiments of the present invention, the process of handling the procedure instruction for failure to remove a ring includes:
s301, closing a light beam irradiated on a thick ring, then restarting the light beam irradiated on the thick ring, and then executing a ring removing retry instruction; the reflected light beam intensities of at least three positions of the thick ring are obtained in real time in the process of executing the ring removing retry instruction;
s302, based on the intensity of the reflected light beam at the current moment and the preset reflected light beam intensity range, judging whether the intensity of the reflected light beam at the current moment at any position accords with the preset reflected light beam intensity range in real time;
If the intensity of the reflected light beam at the current moment of at least one position is not consistent, marking as thick ring fracture, executing a manual ring removing instruction, wherein the manual ring removing instruction comprises a manual ring removing waiting instruction, and acquiring a manual ring removing completion instruction sent by a user in real time;
if the two types of the ring-removing instructions are matched, continuing to execute the current ring-removing instruction until the ring-removing instruction is completed.
In some preferred embodiments of the present invention, the thick loop transfer failure handling procedure instruction process includes:
s401, closing the light beam irradiated on the thick ring, and then restarting the light beam irradiated on the thick ring to acquire the reflected light beam intensity at the current moment of at least three positions of the thick ring in real time;
s402, judging whether the reflected light beam intensities at the current moment at least two positions meet the preset reflected light beam intensity range in real time based on the reflected light beam intensity at the current moment and the preset reflected light beam intensity range;
if yes, marking as false alarm, and continuing to execute the operation of transferring the thick ring to the waste box until the current thick ring transfer is completed;
otherwise, marking as thick ring falling, and executing a manual thick ring transferring instruction, wherein the manual thick ring transferring instruction comprises waiting for a user to manually transfer the thick ring, acquiring a manual transfer completion instruction sent by the user, executing a thick ring transferring retry instruction after the manual transfer completion instruction is acquired, and acquiring the reflected light beam intensity at the current moment at the corresponding position of the thick ring in real time and executing S402 in the process of executing the thick ring transferring retry instruction until the current thick ring transferring instruction is completed; the thick loop transfer retry instruction includes operations of performing a loop removing operation again and transferring the thick loop to the scrap box.
In some embodiments of the present invention, the thickness t of the ultra-thin wafer is 30-400 microns, the outer periphery of the ultra-thin wafer is provided with a thick ring, and the thickness of the thick ring is 600-720 microns.
The invention also provides a system for ultra-thin wafer decyclization, comprising:
the conveying module comprises a conveying arm and a plurality of vacuum chucks arranged on the conveying arm, wherein the vacuum chucks are used for vacuum adsorption and fixing of ultrathin wafers and are used for executing conveying instructions;
the analog quantity sensor is arranged on the air supply pipeline of the vacuum chuck and used for acquiring the vacuum value of the vacuum chuck in real time;
the alarm module is used for sending out a first alarm signal, a second alarm signal or a third alarm signal;
the cutting module comprises a cutting knife and a cutting driving mechanism and is used for cutting the thick ring part on the periphery of the ultrathin wafer;
the cleaning module comprises a cleaning area and is used for cleaning the cut ultrathin wafer;
the UV glue removing module comprises a UV irradiation lamp source and is used for carrying out ultraviolet irradiation glue removing on the cut and cleaned adhesive film on the ultrathin wafer;
the illumination sensor is arranged close to the UV illumination lamp source and is used for detecting the UV energy value in real time;
the ring removing module comprises a ring removing arm and is used for stripping the thick ring on the ultra-thin wafer after UV (ultraviolet) dispergation;
The reflection sensors are at least three and are arranged at intervals in the circumferential direction of the ring removing arm, which is close to the head part of the thick ring, and are used for detecting the intensity of reflection light beams at different positions of the thick ring in real time so as to judge whether the thick ring is broken at the different positions;
waste cassettes and qualified wafer cassettes;
and the control system is electrically connected with the conveying module, the alarm module, the cutting module, the cleaning module, the UV de-gelling module, the illumination sensor, the ring removing module and the reflection sensor respectively, and performs the control method for removing the ring of the ultrathin wafer.
The beneficial effects are that:
according to the invention, the system comprising the cutting module, the cleaning module, the UV dispergation module and the ring removing module is adopted when the thick ring of the ultrathin wafer is cut, so that the ring can be conveniently removed in batches, however, as the wafer is in a micron-sized and expensive size, the conditions of uneven stress, improper processing and the like easily occur in a plurality of ring removing processes, various faults such as thick ring fracture and/or falling, ultrathin wafer falling and the like easily occur, and particularly in the process of carrying the ultrathin wafer, the problems of falling easily occur in the vacuum adsorption process and fracture easily occur in each ring removing process due to the ultrathin and smaller size of the wafer are found; any failure may affect the acceptable production of wafers, causing serious loss. However, no report is made in the prior art on how to reduce the failure rate in the process of ring removal. Based on this, the present invention has been further studied.
According to the technical scheme, the real-time monitoring of the corresponding execution conditions is carried out in the process of each operation of ring removal, so that the possible fault conditions in each operation process are timely intervened and processed, the omnibearing full-flow fault monitoring is carried out, various fault conditions are processed differently, most fault conditions can be considered, faults of corresponding areas in different operations can be safely and rapidly treated, the scrapping risk of products due to the problems of breakage, scratch and the like is obviously reduced, the failure rate of ring removal of the ultrathin wafer is effectively reduced, and economic losses are maximally avoided.
The invention is especially based on the fact that a great amount of researches find that faults and reasons thereof may exist (for example, due to the fact that a UV irradiation light source is used in the process of UV glue removing operation, the UV irradiation light source may be damaged, for example, a UV controller is damaged, a UV lamp tube is damaged, or a UV cover plate on the UV irradiation light source is not opened or closed successfully, so that the monitored UV energy value is lower than a preset UV energy lower limit value, when a ring is removed, the situation that a thick ring is broken due to improper parameter setting or poor processing is possibly caused, and when the ring is carried, if vacuum adsorption is adopted, the problem that vacuum adsorption is not up to standard and can fall off in the carrying process is solved, different parameter indexes are monitored in different operation processes in a targeted manner, for example, the vacuum value in a vacuum chuck is monitored in real time, the UV energy value is monitored in real time in the process of UV glue removing operation, the current moment reflected light beam intensity at least three positions of the thick ring is monitored in real time in the process of ring removing operation and thick ring recycling operation is accurately monitored in real time, the situation of different operation is monitored, whether faults occur is easy to be monitored in real time, and the fault handling is possibly caused, and the fault removing rate is greatly reduced in the process is aimed at the fault removing process. The method comprises the steps of carrying out UV de-gelling operation on a wafer, wherein timely fault detection and treatment in the UV de-gelling operation can sort out products which fail in de-gelling, avoid the risk that thick rings cannot be completely removed to cause breakage, and further avoid the risk that broken wafer fragments are scratched when subsequent products are de-looped, so that the qualification rate of ultra-thin wafers subjected to de-looping processing is improved.
Detailed Description
In the present disclosure, the terms "first," "second," and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying a number of technical features being indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
The invention provides a control method for removing rings of an ultrathin wafer, which comprises the steps of sequentially executing a cutting operation, a cleaning operation, a UV (ultraviolet) dispergation operation and a ring removing operation, after the ring removing operation is completed, executing an operation of transferring a thick ring to a waste box and an operation of transferring the ultrathin wafer to a qualified wafer box, and executing a conveying instruction triggered according to any acquired operation instruction before executing the corresponding operation instruction. After the ring removing operation is completed, the operation of transferring the thick ring to the waste box and the operation of transferring the ultrathin wafer to the qualified wafer box can be performed simultaneously, or one instruction can be executed first and then the other instruction can be executed.
The carrying instruction triggered according to any one of the acquired operation instructions is carried out before the corresponding operation instruction is executed, that is, when any one of the operation instructions of cutting operation, cleaning operation, UV (ultraviolet) de-gelling operation, ring removing operation, thick ring transferring operation to a waste box and ultra-thin wafer transferring operation to a qualified wafer box is acquired, the carrying instruction is triggered to be executed first, and then the current operation instruction is executed. It is understood that the conveyance instruction means that the work object is conveyed to the work area of the current operation instruction so as to perform the current operation on the work object. For example, when a dicing operation is acquired, a transfer instruction for transferring the wafer to the dicing station is triggered, and then the dicing operation is performed. For example, when the operation of transferring the thick ring to the scrap box is obtained, a transfer instruction for transferring the thick ring from the ring removing station of the previous process (ring removing operation) to the region where the scrap box is located is triggered, and then the operation of transferring the thick ring to the scrap box is performed (i.e. the thick ring is continuously transferred into the scrap box). For another example, when the UV decrepitation operation is obtained, the wafer is triggered to be transported from the cleaning station of the previous process (cleaning operation) to the UV decrepitation station, and then the UV decrepitation operation is performed.
In the invention, after the wafer is cut by the cutting operation, the ultrathin wafer positioned in the middle and the thick ring positioned at the periphery are cut, but the surface of the wafer is provided with the adhesive film, so that the ultrathin wafer and the thick ring are not completely peeled at the moment, but the adhesive film is adhered at the junction; then cleaning the waste water by a cleaning operation; then, the photoresist is removed by UV photoresist removing operation, in the step, the photoresist film at the junction of the ultrathin wafer and the thick ring is dissolved under the irradiation of ultraviolet rays, the adhesion degree of the wafer and the photoresist film is reduced, at the moment, the junction of the ultrathin wafer and the thick ring is not adhered with the photoresist film, and it can be understood that the photoresist film at the non-junction (such as the surface of the middle position of the wafer) is not removed and remains; and removing the thick ring from the periphery of the ultrathin wafer through ring removal operation to completely strip the thick ring and the ultrathin wafer, and then respectively recovering the thick ring and the ultrathin wafer. Thick ring shifts to the waste box and can be convenient for concentrate the handling according to the demand.
And the control method for the ultra-thin wafer ring removal further comprises the following steps: in the process of executing the conveying instruction, acquiring a vacuum value at the current moment in a vacuum chuck for adsorbing the ultrathin wafer in real time; based on the current time vacuum value and a preset vacuum lower limit value, judging whether the current time vacuum value is lower than the preset vacuum lower limit value in real time, if yes, sending a first alarm signal, executing a fault handling procedure instruction of the conveying arm, and marking that the current conveying instruction is finished after the fault handling procedure instruction of the conveying arm is finished.
In the invention, the number of the vacuum chucks can be at least two, preferably four, and the vacuum value in each vacuum chuck needs to be detected and acquired in real time. The invention detects the vacuum values in all vacuum chucks in real time, if the vacuum value in any vacuum chuck is lower than the preset vacuum lower limit value, a first alarm signal is sent out, a fault handling procedure instruction of the conveying arm is executed, and after the fault handling procedure instruction of the conveying arm is finished, the current conveying instruction is marked as finished. It can be understood that if the vacuum value in any vacuum chuck is not lower than the preset vacuum lower limit value, the current instruction is continuously carried, and other instructions are not triggered.
In some embodiments of the present invention, whether the operation of the previous process is completed may be determined according to the real-time acquisition of the operation progress. For example, in the process of executing the cutting operation, the cutting progress information may be obtained in real time, and whether the cutting is completed is judged based on the cutting progress information and a preset cutting process information table, if yes, a cutting completion signal is sent, and then the next procedure is executed; the preset cutting process information table stores cutting progress information and cutting completion information; the cutting progress information may be represented by a cutting route, for example, and the proportion of the cutting route to the total route is represented as cutting completion information. Those skilled in the art can appropriately select according to the actual situation and the requirements.
And the control method for the ultra-thin wafer ring removal further comprises the following steps: in the process of executing UV de-gelling operation, acquiring a UV energy value at the current moment in real time; based on the current moment UV energy value and a preset UV energy lower limit value, judging whether the current moment UV energy value is lower than the preset UV energy lower limit value in real time, if yes, sending a second alarm signal, executing a UV debonder failure treatment procedure instruction, and marking that the current UV debonder operation is completed after the UV debonder failure treatment procedure instruction is completed.
In the invention, the specific values or ranges of the preset vacuum lower limit value and the preset UV energy lower limit value can be adjusted according to the thickness, the size, the corresponding effect degree and the like of the ultrathin wafer or the thick ring, so long as the method is beneficial to the required operation and sensitive monitoring on whether faults occur.
And the control method for the ultra-thin wafer ring removal further comprises the following steps: in the operation process of executing ring removing operation and transferring the thick ring to the waste box, the reflected beam intensity at the current moment of at least three positions of the thick ring is obtained in real time, whether the reflected beam intensity at the current moment accords with the preset reflected beam intensity range or not is judged in real time based on the reflected beam intensity at the current moment and the preset reflected beam intensity range, if not, a third alarm signal is sent, a corresponding operation failure treatment procedure instruction is executed, and after the corresponding operation failure treatment procedure instruction is completed, the current operation is marked as being completed; wherein the respective operation failure handling procedure instruction includes a ring removal failure handling procedure instruction or a thick ring transfer failure handling procedure instruction. It is understood that the respective operation failure handling process instruction corresponding to the ring removing operation is a ring removing failure handling process instruction, and the respective operation failure handling process instruction of the operation of the thick ring transfer to the waste cartridge is a thick ring transfer failure handling process instruction.
In the present invention, when the thick ring is not broken during the ring removing operation, the reading is normal because the thick ring can actively reflect the light beam irradiated on the thick ring. In contrast, when the thick ring breaks, the thick ring at the breaking position cannot reflect the light beam to cause abnormal reading, so that whether the thick ring breaks or not can be judged according to the reflected light beam intensity at different positions of the thick ring detected in real time and the preset reflected light beam intensity range. The preset reflected beam intensity range can be determined by those skilled in the art according to the values of the broken thick rings (including different degrees of breakage) and the unbroken cases and the actual requirements.
During the operation of transferring the thick ring to the scrap box, when the thick ring is not dropped, the thick ring is read normally because it can actively reflect the light beam irradiated on the thick ring. In contrast, when at least part of the thick ring falls (the probability of failure in the conveying process is increased due to the falling of part of the thick ring, corresponding processing is also needed), the thick ring at the falling position cannot reflect light beams or the reflected light beam intensity is low, so that abnormal reading is caused, and whether the thick ring falls or not can be judged according to the reflected light beam intensity at different positions of the thick ring detected in real time and the preset reflected light beam intensity range. During the operation of transferring the thick ring to the scrap box, a person skilled in the art can appropriately select a preset reflected light beam intensity range according to the falling condition of the thick ring and the reflected light beam intensity when the thick ring is not falling, and the preset reflected light beam intensity range in this condition is the same as or different from the preset reflected light beam intensity range during the operation of performing the ring removing.
In some preferred embodiments of the present invention, the handling arm failure handling procedure instruction includes executing a corresponding operation retry instruction first and then executing a manual operation instruction.
In some preferred embodiments of the present invention, the UV debonder failure handling procedure instruction includes performing a UV retry instruction first and then performing a manual transfer instruction, where the manual transfer instruction includes manually removing the ultra-thin wafer at the current time and transferring to the debonder failure wafer box.
In some preferred embodiments of the present invention, the ring removal failure handling procedure instruction includes performing a ring removal retry instruction first, marking as a thick ring fracture when the current reflected beam intensity of at least one of the positions does not conform to a preset reflected beam intensity range according to the current reflected beam intensities of at least three positions acquired in real time and the preset reflected beam intensity range, and performing a manual ring removal instruction when the thick ring fracture occurs.
In some preferred embodiments of the present invention, the thick ring transition failure handling procedure instruction includes restarting the irradiation beam, marking as false alarm when the reflected beam intensities at the current moments at the at least two positions of the thick ring meet the preset reflected beam intensity range according to the reflected beam intensities at the current moments at the different positions of the thick ring and the preset reflected beam intensity range, and continuing to execute the current operation, and if not, executing the manual transition thick ring instruction and the thick ring transition retry instruction.
In the preferable fault treatment scheme, the specially set monitoring indexes are matched with the respective treatment process, particularly, the large fault problem can be solved by most of adopted retry operations, the manual operation is less, the degree of automatic real-time monitoring and treatment is high, the ring removing efficiency is greatly improved, and the fault rate is reduced.
In the invention, the current time refers to a preset detection time unit, for example, the detection time unit can be detected once and acquired once in 1 minute, and then the current time refers to the current time within 1 minute; it may be detected once or acquired once for 20 minutes, and the current time is the current 20 minutes.
In some specific preferred embodiments of the present invention, the process of executing the handling arm failure handling process instruction includes:
s101, closing vacuum of a vacuum chuck, and driving a conveying arm to lift and move along a direction away from an ultrathin wafer;
s102, executing a conveying retry instruction, wherein the conveying retry instruction comprises: transferring the conveying arm to a target adsorption position, and opening vacuum of the vacuum chuck to adsorb the ultrathin wafer again; the vacuum value at the current moment in the vacuum chuck is obtained in real time in the re-adsorption process;
Based on the current time vacuum value and a preset vacuum lower limit value, judging whether the current time vacuum value is lower than the preset vacuum lower limit value in real time;
if yes, the retry operation of S101-S102 is executed, and a manual mode instruction is executed under the condition that the vacuum value at the current moment is still lower than the preset vacuum lower limit value after the retry operation is executed twice, wherein the manual mode instruction comprises a manual conveying waiting instruction and a manual conveying completion instruction sent by a user is acquired in real time;
if not, continuing to execute the current conveying instruction until the completion.
In some specific preferred embodiments of the present invention, the process of executing the UV debonder failure handling procedure instruction includes:
s201, turning off a UV irradiation lamp source;
s202, executing a UV retry instruction, wherein the UV retry instruction comprises restarting a UV irradiation lamp source to irradiate again; the UV energy value at the current moment is obtained in real time in the re-irradiation process; based on the current moment UV energy value and a preset UV energy lower limit value, judging whether the current moment UV energy value is lower than the preset UV energy lower limit value or not in real time;
if yes, executing S201, and then executing a manual transfer instruction, wherein the manual transfer instruction comprises manually taking down an ultrathin wafer at the current moment and transferring the ultrathin wafer to a wafer box with a failure in debonding, and marking that a UV debonding failure treatment procedure instruction is completed after completion;
If not, continuing to execute the current UV glue-breaking instruction until finishing.
The preset lower limit value of the UV energy can be determined according to actual requirements.
In some specific preferred embodiments of the present invention, the process of handling the procedure instruction for failure to remove the ring includes:
s301, closing a light beam irradiated on a thick ring, then restarting the light beam irradiated on the thick ring, and then executing a ring removing retry instruction; the reflected light beam intensities of at least three positions of the thick ring are obtained in real time in the process of executing the ring removing retry instruction;
s302, based on the intensity of the reflected light beam at the current moment and the preset reflected light beam intensity range, judging whether the intensity of the reflected light beam at the current moment at any position accords with the preset reflected light beam intensity range in real time;
if the intensity of the reflected light beam at the current moment of at least one position is not consistent, marking as thick ring fracture, executing a manual ring removing instruction, wherein the manual ring removing instruction comprises a manual ring removing waiting instruction, and acquiring a manual ring removing completion instruction sent by a user in real time;
if the two types of the ring-removing instructions are matched, continuing to execute the current ring-removing instruction until the ring-removing instruction is completed. In the preferred scheme, a great deal of researches show that if the intensity of the reflected light beam at the current moment of at least three positions of the thick ring is monitored, whether the thick ring is broken or not can be accurately judged, and if the intensity of the reflected light beam at the current moment of at least one position is not consistent, manual ring removal is performed, manual timely intervention is performed, and the problem that the thick ring is broken to cause easy falling in the conveying process is solved.
In some particularly preferred embodiments of the present invention, the thick loop transfer failure handling procedure instruction process includes:
s401, closing the light beam irradiated on the thick ring, and then restarting the light beam irradiated on the thick ring to acquire the reflected light beam intensity at the current moment of at least three positions of the thick ring in real time;
s402, judging whether the reflected light beam intensities at the current moment at least two positions meet the preset reflected light beam intensity range in real time based on the reflected light beam intensity at the current moment and the preset reflected light beam intensity range;
if yes, marking as false alarm, and continuing to execute the operation of transferring the thick ring to the waste box until the current thick ring transfer is completed;
otherwise, marking as thick ring falling, and executing a manual thick ring transferring instruction, wherein the manual thick ring transferring instruction comprises waiting for a user to manually transfer the thick ring, acquiring a manual transfer completion instruction sent by the user, executing a thick ring transferring retry instruction after the manual transfer completion instruction is acquired, and acquiring the reflected light beam intensity at the current moment at the corresponding position of the thick ring in real time and executing S402 in the process of executing the thick ring transferring retry instruction until the current thick ring transferring instruction is completed; the thick loop transfer retry instruction includes operations of performing a loop removing operation again and transferring the thick loop to the scrap box. In the preferred scheme, a great deal of researches show that if the intensity of the reflected light beam at the current moment at least two positions accords with the preset reflected light beam intensity range, the possibility that the thick ring falls off in the middle of transfer is extremely low, and if only one of the reflected light beam intensities accords with the preset reflected light beam intensity range or neither of the reflected light beam intensities accords with the preset reflected light beam intensity range, the possibility that the thick ring falls off in the middle of transfer is large or falls off, so that the later process is timely intervened to avoid faults.
The specific signals of the first alarm signal, the second alarm signal and the third alarm signal in the invention can be selected by a person skilled in the art according to actual requirements, for example, the specific signals can be red light warning for reminding a worker to perform corresponding processing.
In some preferred embodiments of the present invention, the thickness t of the ultra-thin wafer is 30-400 microns, the outer periphery of the ultra-thin wafer is provided with thick rings and the thickness of the thick rings is 600-720 microns. The invention is especially suitable for the ring removing treatment of ultrathin wafers, and timely monitoring and treating faults.
The invention also provides a system for ultra-thin wafer decyclization, comprising: the device comprises a conveying module, an analog sensor, an alarm module, a cutting module, a cleaning module, a UV (ultraviolet) glue removing module, an illumination sensor, a ring removing module, a reflection sensor, a waste box, a qualified wafer box and a control system. According to the invention, through the cooperation of the conveying module, the cutting module, the cleaning module, the UV dispergation module and other functional modules, the analog quantity sensor, the alarm module, the illumination sensor, the reflection sensor and the control system are arranged, so that the real-time monitoring of each link of the ring removal can be realized, faults are monitored in time, faults are intervened in time, and the fault rate of ring removal processing is greatly reduced.
The conveying module comprises a conveying arm and a plurality of vacuum chucks arranged on the conveying arm, wherein the vacuum chucks are used for vacuum adsorption and fixing of ultrathin wafers and executing conveying instructions.
The analog quantity sensor is arranged on the air supply pipeline of the vacuum chuck and used for acquiring the vacuum value of the vacuum chuck in real time.
The alarm module is used for sending out a first alarm signal, a second alarm signal or a third alarm signal.
The cutting module comprises a cutting knife and a cutting driving mechanism and is used for cutting the thick ring part on the periphery of the ultrathin wafer.
The cleaning module comprises a cleaning area and is used for cleaning the cut ultrathin wafer.
The UV glue removing module comprises a UV irradiation lamp source and is used for removing glue from the cut and cleaned ultra-thin wafer by ultraviolet irradiation.
The illumination sensor is arranged close to the UV irradiation lamp source and is used for detecting the UV energy value in real time.
The ring removing module comprises a ring removing arm, and is used for stripping thick rings on the ultra-thin wafer after UV (ultraviolet) dispergation.
The reflective sensors are at least three and are arranged at intervals in the circumferential direction of the ring removing arm, which is close to the head of the thick ring, and are used for detecting the intensity of the reflective light beams at different positions of the thick ring in real time so as to judge whether the thick ring is broken at different positions. When the thick ring is not broken, the reflective sensor reads normally because the thick ring can positively reflect the light beam emitted from the reflective sensor. In contrast, when the thick ring breaks, the reflective sensor can judge whether the thick ring breaks or not by detecting the reflected light beams at different positions because the thick ring cannot reflect the light beams to cause abnormal reading.
The control system is electrically connected with the conveying module, the alarm module, the cutting module, the cleaning module, the UV de-glue module, the illumination sensor, the ring removing module and the reflection sensor respectively, and performs the control method for removing the rings of the ultrathin wafer.
The number of the vacuum chucks in the conveying module can be selected according to actual requirements, and preferably, four vacuum chucks are arranged on the conveying arm to adsorb one wafer. The invention detects the vacuum values inside all vacuum chucks in real time through the analog quantity sensor.
The specific structure of the cutting module, the cleaning module, the UV dispergation module and the ring removing module is not limited, so long as the required cutting, cleaning, UV dispergation and ring removing functions can be realized, and a person skilled in the art can select any one of the cutting module, the cleaning module, the UV dispergation module and the ring removing module from the prior art, for example, any one of the cutting module, the cleaning module, the UV dispergation module and the ring removing module can independently select from CN114571616A, KR102409260B1 and CN 114843207B.
The conveying arm and the alarm module of the conveying module can realize the corresponding conveying function and the corresponding alarm function required by vacuum adsorption, and can be selected from the prior art by the person skilled in the art.
The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited thereto. Within the scope of the technical idea of the invention, a number of simple variants of the technical solution of the invention are possible, including combinations of the individual technical features in any other suitable way, which simple variants and combinations should likewise be regarded as being disclosed by the invention, all falling within the scope of protection of the invention.
Claims (10)
1. The control method for the ultra-thin wafer ring removal is characterized by comprising the steps of sequentially executing a cutting operation, a cleaning operation, a UV (ultraviolet) glue removing operation and a ring removing operation, after the ring removing operation is completed, executing an operation of transferring a thick ring to a waste box and an operation of transferring an ultra-thin wafer to a qualified wafer box, and executing a conveying instruction triggered according to any acquired operation instruction, wherein the conveying instruction is executed before executing the corresponding operation instruction; and further comprising the steps of:
in the process of executing the conveying instruction, acquiring a vacuum value at the current moment in a vacuum chuck for adsorbing the ultrathin wafer in real time; judging whether the vacuum value at the current moment is lower than the preset vacuum lower limit value or not in real time based on the vacuum value at the current moment and the preset vacuum lower limit value, if yes, sending a first alarm signal, executing a fault handling procedure instruction of the conveying arm, and marking that the current conveying instruction is finished after the fault handling procedure instruction of the conveying arm is finished;
In the process of executing UV de-gelling operation, acquiring a UV energy value at the current moment in real time; based on the current moment UV energy value and a preset UV energy lower limit value, judging whether the current moment UV energy value is lower than the preset UV energy lower limit value in real time, if yes, sending a second alarm signal, executing a UV debonder failure treatment procedure instruction, and marking that the current UV debonder operation is completed after the UV debonder failure treatment procedure instruction is completed;
in the operation process of executing ring removing operation and transferring the thick ring to the waste box, the reflected beam intensity at the current moment of at least three positions of the thick ring is obtained in real time, whether the reflected beam intensity at the current moment accords with the preset reflected beam intensity range or not is judged in real time based on the reflected beam intensity at the current moment and the preset reflected beam intensity range, if not, a third alarm signal is sent, a corresponding operation failure treatment procedure instruction is executed, and after the corresponding operation failure treatment procedure instruction is completed, the current operation is marked as being completed; wherein the respective operation failure handling procedure instruction includes a ring removal failure handling procedure instruction or a thick ring transfer failure handling procedure instruction.
2. The method of claim 1, wherein the handling of the failure of the handling arm includes performing a corresponding operation retry instruction and then performing a manual operation instruction.
3. The method for controlling the decyclization of an ultra-thin wafer as claimed in claim 2, wherein,
the process of executing the fault handling process instruction of the conveying arm comprises the following steps:
s101, closing vacuum of a vacuum chuck, and driving a conveying arm to lift and move along a direction away from an ultrathin wafer;
s102, executing a conveying retry instruction, wherein the conveying retry instruction comprises: transferring the conveying arm to a target adsorption position, and opening vacuum of the vacuum chuck to adsorb the ultrathin wafer again; the vacuum value at the current moment in the vacuum chuck is obtained in real time in the re-adsorption process;
based on the current time vacuum value and a preset vacuum lower limit value, judging whether the current time vacuum value is lower than the preset vacuum lower limit value in real time;
if yes, the retry operation of S101-S102 is executed, and a manual mode instruction is executed under the condition that the vacuum value at the current moment is still lower than the preset vacuum lower limit value after the retry operation is executed twice, wherein the manual mode instruction comprises a manual conveying waiting instruction and a manual conveying completion instruction sent by a user is acquired in real time;
if not, continuing to execute the current conveying instruction until the completion.
4. The method of claim 1, wherein the UV de-chucking failure handling procedure instruction includes performing a UV retry instruction and then performing a manual transfer instruction, the manual transfer instruction including manually removing the ultra-thin wafer at the current time and transferring to a de-chucking failure wafer cassette.
5. The method of claim 4, wherein the step of executing the UV de-glue failure handling process instruction comprises:
s201, turning off a UV irradiation lamp source;
s202, executing a UV retry instruction, wherein the UV retry instruction comprises restarting a UV irradiation lamp source to irradiate again; the UV energy value at the current moment is obtained in real time in the re-irradiation process; based on the current moment UV energy value and a preset UV energy lower limit value, judging whether the current moment UV energy value is lower than the preset UV energy lower limit value or not in real time;
if yes, executing S201, and then executing a manual transfer instruction, wherein the manual transfer instruction comprises manually taking down an ultrathin wafer at the current moment and transferring the ultrathin wafer to a wafer box with a failure in debonding, and marking that a UV debonding failure treatment procedure instruction is completed after completion;
if not, continuing to execute the current UV glue-breaking instruction until finishing.
6. The method according to claim 1, wherein the failed-to-remove-ring process instruction includes performing a failed-to-remove-ring retry instruction, marking as a thick-ring fracture when the current reflected beam intensity of at least one of the positions does not conform to a preset reflected beam intensity range, and performing a manual failed-ring instruction when the thick-ring fracture occurs, according to the current reflected beam intensities of the at least three positions acquired in real time and the preset reflected beam intensity range;
The thick ring transfer failure handling procedure instruction comprises restarting an irradiation beam, according to the reflected beam intensities at the current moments at different positions of the thick ring and the preset reflected beam intensity range, marking as false alarm when the reflected beam intensities at the current moments at least two positions of the thick ring meet the preset reflected beam intensity range, and simultaneously continuing to execute the current operation, and if not, executing a manual thick ring transfer instruction and a thick ring transfer retry instruction.
7. The method of claim 6, wherein the process of the de-ringing failure handling procedure instruction comprises:
s301, closing a light beam irradiated on a thick ring, then restarting the light beam irradiated on the thick ring, and then executing a ring removing retry instruction; the reflected light beam intensities of at least three positions of the thick ring are obtained in real time in the process of executing the ring removing retry instruction;
s302, based on the intensity of the reflected light beam at the current moment and the preset reflected light beam intensity range, judging whether the intensity of the reflected light beam at the current moment at any position accords with the preset reflected light beam intensity range in real time;
if the intensity of the reflected light beam at the current moment of at least one position is not consistent, marking as thick ring fracture, executing a manual ring removing instruction, wherein the manual ring removing instruction comprises a manual ring removing waiting instruction, and acquiring a manual ring removing completion instruction sent by a user in real time;
If the two types of the ring-removing instructions are matched, continuing to execute the current ring-removing instruction until the ring-removing instruction is completed.
8. The control method for ultra-thin wafer decyclization of claim 6, wherein the thick ring transfer failure handling process of process instructions comprises:
s401, closing the light beam irradiated on the thick ring, and then restarting the light beam irradiated on the thick ring to acquire the reflected light beam intensity at the current moment of at least three positions of the thick ring in real time;
s402, judging whether the reflected light beam intensities at the current moment at least two positions meet the preset reflected light beam intensity range in real time based on the reflected light beam intensity at the current moment and the preset reflected light beam intensity range;
if yes, marking as false alarm, and continuing to execute the operation of transferring the thick ring to the waste box until the current thick ring transfer is completed;
otherwise, marking as thick ring falling, and executing a manual thick ring transferring instruction, wherein the manual thick ring transferring instruction comprises waiting for a user to manually transfer the thick ring, acquiring a manual transfer completion instruction sent by the user, executing a thick ring transferring retry instruction after the manual transfer completion instruction is acquired, and acquiring the reflected light beam intensity at the current moment at the corresponding position of the thick ring in real time and executing S402 in the process of executing the thick ring transferring retry instruction until the current thick ring transferring instruction is completed; the thick loop transfer retry instruction includes operations of performing a loop removing operation again and transferring the thick loop to the scrap box.
9. The method for controlling the decyclization of an ultra-thin wafer according to claim 1, wherein the thickness t of the ultra-thin wafer is 30-400 microns, the outer periphery of the ultra-thin wafer is provided with a thick ring, and the thickness of the thick ring is 600-720 microns.
10. A system for de-chucking an ultra-thin wafer, comprising:
the conveying module comprises a conveying arm and a plurality of vacuum chucks arranged on the conveying arm, wherein the vacuum chucks are used for vacuum adsorption and fixing of ultrathin wafers and are used for executing conveying instructions;
the analog quantity sensor is arranged on the air supply pipeline of the vacuum chuck and used for acquiring the vacuum value of the vacuum chuck in real time;
the alarm module is used for sending out a first alarm signal, a second alarm signal or a third alarm signal;
the cutting module comprises a cutting knife and a cutting driving mechanism and is used for cutting the thick ring part on the periphery of the ultrathin wafer;
the cleaning module comprises a cleaning area and is used for cleaning the cut ultrathin wafer;
the UV glue removing module comprises a UV irradiation lamp source and is used for carrying out ultraviolet irradiation glue removing on the cut and cleaned adhesive film on the ultrathin wafer;
the illumination sensor is arranged close to the UV illumination lamp source and is used for detecting the UV energy value in real time;
The ring removing module comprises a ring removing arm and is used for stripping the thick ring on the ultra-thin wafer after UV (ultraviolet) dispergation;
the reflection sensors are at least three and are arranged at intervals in the circumferential direction of the ring removing arm, which is close to the head part of the thick ring, and are used for detecting the intensity of reflection light beams at different positions of the thick ring in real time so as to judge whether the thick ring is broken at the different positions;
waste cassettes and qualified wafer cassettes;
a control system electrically connected to the transport module, the alarm module, the cutting module, the cleaning module, the UV de-glue module, the illumination sensor, the de-ringing module, the reflection sensor, respectively, and performing the control method for ultra-thin wafer de-ringing according to any one of claims 1-9.
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