CN112705859A - Laser cutting ring-removing method for wafer - Google Patents
Laser cutting ring-removing method for wafer Download PDFInfo
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- CN112705859A CN112705859A CN202011462759.3A CN202011462759A CN112705859A CN 112705859 A CN112705859 A CN 112705859A CN 202011462759 A CN202011462759 A CN 202011462759A CN 112705859 A CN112705859 A CN 112705859A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000003698 laser cutting Methods 0.000 title claims abstract description 29
- 238000005520 cutting process Methods 0.000 claims abstract description 65
- 230000000694 effects Effects 0.000 claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 64
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Abstract
The invention discloses a laser cutting ring-removing method of a wafer, which comprises the following steps: firstly, placing and fixing a wafer on a cutting table; dividing incident laser beams emitted by the laser emitter into reflected laser beams and refracted laser beams through a spectroscope; and thirdly, cutting and removing the edge ring of the wafer by adopting the reflected laser beam or the refracted laser beam, and reducing the heat effect in the cutting process by utilizing the characteristic that the energy of the reflected laser beam or the refracted laser beam is lower than that of the incident laser beam. The invention can improve the width of the laser cutting beam and ensure that the laser cutting beam has lower energy, thereby reducing the heat effect in the cutting process and avoiding generating ablates to splash onto the surface of the wafer on the inner side of the edge ring, thereby preventing the effective chip grains of the wafer from generating adverse effects, and meanwhile, the wider laser cutting beam is beneficial to cutting the thinner wafer without generating micro-cracks.
Description
Technical Field
The present invention relates to a semiconductor integrated circuit manufacturing process, and more particularly, to a Ring removal (Ring Cut) method for wafer laser cutting.
Background
In semiconductor integrated circuit manufacturing, wafers are often thinned to improve device performance, and after the wafers are thinned, edge rings of the wafers are cut and removed. The wafer thinning process comprises a Taiko (Taiko) thinning process, the Taiko thinning process only thins the middle area of the wafer, and the edge area of the wafer is not thinned and is used as a support ring.
The cutting process of the edge ring of the wafer includes laser cutting, as shown in fig. 1, which is a schematic diagram of laser cutting in the conventional laser cutting ring-removing method of the wafer; the existing laser cutting ring-removing method for the wafer comprises the following steps:
step one, the wafer 102 is placed and fixed on the cutting table 101.
The wafer 102 is thinned.
The thinning process of the wafer 102 includes drum thinning.
The thickness of the thinned wafer 102 is tens of micrometers to hundreds of micrometers.
The width of the edge ring to be cut on the wafer 102 is several millimeters or less.
Step two, a laser beam 105a emitted by a laser emitter 103 is reflected by a reflecting mirror 104 to form a cutting beam 105b, the edge Ring of the wafer 102 is cut by the cutting beam 105b to Remove the edge Ring (Ring Remove), namely, the edge Ring is subjected to laser cutting, namely Ring cut, and then the edge Ring after laser cutting is removed, namely Ring Remove;
in the wafer manufacturing process, in order to increase the effective area of the wafer 102, the laser beam 105a with a small width is generally selected in the cutting process to reduce the cutting width; the width of the cutting beam 105b is equal to the width of the laser beam 105 a.
But as the thin sheet process is developed to be thinner, microcracks occur in an effective area in the Ring Remove process; if a wider laser beam is simply selected, the thermal effect per unit time will increase rapidly, causing a significant amount of ablates to splash onto the active die (die) in the wafer center and edge and causing irreversible thermal reaction of the active die.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for removing a ring of a wafer by laser cutting, which can reduce the energy of a laser cutting beam, thereby improving the width of the laser cutting beam, ensuring that the laser cutting beam has lower energy, reducing the heat effect in the cutting process and avoiding generating ablates to splash on the surface of the wafer at the inner side of an edge ring, and the wider laser cutting beam is beneficial to cutting a thinner wafer without generating micro-cracks.
In order to solve the above technical problem, the method for removing the ring of the wafer by laser cutting provided by the invention comprises the following steps:
step one, the wafer is placed and fixed on a cutting table.
And secondly, dividing incident laser beams emitted by the laser emitter into reflected laser beams and refracted laser beams through a spectroscope, wherein the energy of the reflected laser beams and the energy of the refracted laser beams are lower than that of the incident laser beams.
And thirdly, cutting the edge ring of the wafer by adopting the reflected laser beam or the refracted laser beam and removing the edge ring, and reducing the heat effect in the cutting process and avoiding generating ablates to splash on the surface of the wafer on the inner side of the edge ring by utilizing the characteristic that the energy of the reflected laser beam or the refracted laser beam is lower than that of the incident laser beam.
In a further improvement, the reflected laser beam is reflected by the first reflector and then irradiates the edge ring of the wafer to realize the cutting of the edge ring.
In a further improvement, the reflected laser beam has a first angle with the normal of the wafer after being reflected by the first reflector, and the first angle is adjusted to enable the width of a cut formed by irradiating the reflected laser beam onto the edge ring to be larger than that of the reflected laser beam, so that cracks generated in the cutting process are reduced.
In a further refinement, the first angle is equal to an exit angle of the beam splitter.
In a further improvement, the refracted laser beam is reflected by a second reflector and then irradiates the edge ring of the wafer to realize the cutting of the edge ring.
In a further improvement, the refracted laser beam has a second angle with the normal of the wafer after being reflected by a second reflector, and the second angle is adjusted to enable the reflected laser beam to irradiate the edge ring to form a cutting width larger than that of the reflected laser beam, so that cracks generated in the cutting process are reduced.
In a further improvement, the second angle is equal to the exit angle of the beam splitter.
In a further improvement, in the second step, the energy attenuation of the beam splitter to the incident laser beam is less than 20%.
The further improvement is that the ratio of the energy of the reflected laser beam to the energy of the refracted laser beam is 10: 1-1: 10.
In a further improvement, the incident angle of the incident laser beam to the beam splitter is 0 to 90 degrees.
The further improvement is that the included angle between the cutting beam after the reflected laser beam is reflected by the first reflecting mirror and the cutting beam after the refracted laser beam is reflected by the second reflecting mirror is 0-360 degrees.
In a further improvement, the wafer in the first step is thinned.
In a further improvement, the thinning process of the wafer comprises drum thinning.
The further improvement is that the thickness of the thinned wafer is tens of microns to hundreds of microns.
In a further refinement, the width of the edge ring is less than a few millimeters.
The invention does not directly use the incident laser beam emitted by the laser emitter as the cutting beam of the wafer, but uses the reflected laser beam and the refracted laser beam formed by the incident laser beam after being split by the beam splitter as the cutting beam of the wafer, because the energy of the reflected laser beam and the refracted laser beam is reduced after being split by the beam splitter, and simultaneously, the width of the reflected laser beam and the refracted laser beam can be maintained, thereby improving the width of the laser cutting beam, ensuring that the laser cutting beam has lower energy, reducing the heat effect in the cutting process and avoiding generating ablates to splash onto the surface of the wafer on the inner side of the edge ring, and preventing the effective chip grains on the wafer from generating adverse effects such as irreversible thermal reaction; meanwhile, the wider laser cutting beam is beneficial to cutting thinner wafers without generating micro-cracks.
In addition, an included angle is formed between the reflected laser beam and the refracted laser beam after the beam splitter splits and the incident laser beam, so that the reflected laser beam or the refracted laser beam is incident at an angle after being irradiated onto the wafer through the corresponding reflecting mirror, and the width of the cutting beam actually irradiated onto the wafer is larger than that of the cutting beam, so that the actual cutting width can be further expanded under the condition of not changing the energy of the cutting beam, and the cutting effect on a thinner wafer can be further improved.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a schematic diagram of a laser dicing in a conventional method for laser dicing a wafer to remove a ring;
FIG. 2 is a flowchart of a method for laser dicing a wafer according to an embodiment of the invention;
FIG. 3 is a schematic diagram of laser dicing in a method for laser dicing a wafer to remove rings according to an embodiment of the invention.
Detailed Description
Fig. 2 is a flowchart illustrating a method for removing a ring from a wafer 2 by laser dicing according to an embodiment of the present invention; fig. 3 is a schematic diagram illustrating laser dicing in the method for laser dicing and ring-removing of a wafer 2 according to an embodiment of the invention. The laser cutting ring-removing method for the wafer 2 comprises the following steps:
step one, the wafer 2 is placed and fixed on the cutting table 1.
The wafer 2 is thinned.
The thinning process of the wafer 2 comprises Taiko thinning.
The thickness of the thinned wafer 2 is tens of micrometers to hundreds of micrometers.
The width of the edge ring to be cut on the wafer 2 is several millimeters or less.
Step two, dividing an incident laser beam 6a emitted by the laser emitter 3 into a reflected laser beam 6b and a refracted laser beam 6c by the spectroscope 4, wherein the energy of the reflected laser beam 6b and the energy of the refracted laser beam 6c are both lower than that of the incident laser beam 6 a.
In the embodiment of the present invention, the energy attenuation of the beam splitter 4 to the incident laser beam 6a is less than 20%.
The ratio of the energy of the reflected laser beam 6b to the energy of the refracted laser beam 6c is 10: 1-1: 10.
The incident angle of the incident laser beam 6a to the spectroscope 4 is 0-90 degrees; in fig. 3, the incident laser beam 6a is perpendicularly incident to the beam splitter 4.
And thirdly, cutting the edge ring of the wafer 2 by using the reflected laser beam 6b or the refracted laser beam 6c and removing the edge ring. Namely, firstly, carrying out laser cutting on the edge ring, and then removing the edge ring after the laser cutting; the characteristic that the energy of the reflected laser beam 6b or the refracted laser beam 6c is lower than that of the incident laser beam 6a is utilized to reduce the thermal effect in the cutting process and avoid generating ablations to splash on the surface of the wafer 2 at the inner side of the edge ring.
In the embodiment of the present invention, the reflected laser beam 6b is reflected by the first reflecting mirror 5a and then irradiates the edge ring of the wafer 2 to cut the edge ring. The cutting beam after said reflected laser beam 6b has been reflected by the first mirror 5a is indicated by reference numeral 6 d.
The reflected laser beam 6b has a first angle with the normal of the wafer 2 after being reflected by the first reflecting mirror 5a, and the first angle is adjusted to enable the cutting width formed by the reflected laser beam 6b irradiating the edge ring to be larger than the width of the reflected laser beam 6b, so that cracks generated in the cutting process are reduced.
The first angle is equal to the exit angle θ of the beam splitter 4.
The refracted laser beam 6c is reflected by the second reflecting mirror 5b and then irradiates the edge ring of the wafer 2 to cut the edge ring. The cutting beam after reflection of the refracted laser beam 6c by the second reflecting mirror 5b is indicated by reference numeral 6 e.
The refracted laser beam 6c has a second angle with the normal of the wafer 2 after being reflected by the second reflecting mirror 5b, and the second angle is adjusted to enable the reflected laser beam 6b to irradiate the edge ring to form a cutting width larger than the width of the reflected laser beam 6b, so that cracks generated in the cutting process are reduced.
The second angle is equal to the exit angle θ of the beam splitter 4.
In the embodiment of the present invention, an included angle between the cutting beam of the reflected laser beam 6b reflected by the first reflecting mirror 5a and the cutting beam of the refracted laser beam 6c reflected by the second reflecting mirror 5b is 0 to 360 degrees. In fig. 3, cutting beams 6d and 6e are parallel, both of which enable cutting of the edge ring of the wafer.
The embodiment of the present invention does not directly use the incident laser beam 6a emitted from the laser emitter 3 as the cutting beam of the wafer 2, but the reflected laser beam 6b and the refracted laser beam 6c formed by the incident laser beam 6a being split by the beam splitter 4 are used as the dicing beam of the wafer 2, since the energies of the reflected laser beam 6b and the refracted laser beam 6c are both reduced after being split by the beam splitter 4, and at the same time, the widths of the reflected laser beam 6b and the refracted laser beam 6c can be maintained, thereby ensuring that the laser cutting beam has lower energy while improving the width of the laser cutting beam, and thus can reduce the heat effect in the course of cutting and avoid producing the ablated thing to splash on the surface of the crystal plate 2 of the inner side of edge ring, the laser cutting light beam of the broad is favorable to cutting the thinner crystal plate 2, will not produce the micro-crack when removing the edge ring.
In addition, an included angle is formed between the reflected laser beam 6b and the refracted laser beam 6c after being split by the beam splitter 4 and the incident laser beam 6a, so that the reflected laser beam 6b or the refracted laser beam 6c is incident at an angle after being irradiated onto the wafer 2 through the corresponding reflecting mirror, and the width of the cutting beam actually irradiated onto the wafer 2 is larger than the width of the cutting beam, so that the actual cutting width can be further expanded under the condition that the energy of the cutting beam is not changed, and the cutting effect on the thinner wafer 2 can be further improved.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (15)
1. A laser cutting ring-removing method of a wafer is characterized by comprising the following steps:
firstly, placing and fixing a wafer on a cutting table;
dividing incident laser beams emitted by a laser emitter into reflected laser beams and refracted laser beams through a spectroscope, wherein the energy of the reflected laser beams and the energy of the refracted laser beams are lower than that of the incident laser beams;
and thirdly, cutting the edge ring of the wafer by adopting the reflected laser beam or the refracted laser beam and removing the edge ring, and reducing the heat effect in the cutting process and avoiding generating ablates to splash on the surface of the wafer on the inner side of the edge ring by utilizing the characteristic that the energy of the reflected laser beam or the refracted laser beam is lower than that of the incident laser beam.
2. The laser dicing ring-removal method of a wafer according to claim 1, characterized in that: and the reflected laser beam irradiates the edge ring of the wafer after being reflected by the first reflecting mirror to realize the cutting of the edge ring.
3. The laser dicing ring-removal method of a wafer according to claim 2, characterized in that: the reflected laser beam has a first angle with the normal of the wafer after being reflected by the first reflecting mirror, and the first angle is adjusted to enable the cutting width formed by the reflected laser beam irradiating the edge ring to be larger than the width of the reflected laser beam, so that cracks generated in the cutting process are reduced.
4. The laser dicing ring-removal method of a wafer according to claim 3, characterized in that: the first angle is equal to the exit angle of the beam splitter.
5. A method for laser dicing and ring-removing of a wafer according to claim 1, 2 or 3, characterized in that: and the refracted laser beam irradiates the edge ring of the wafer after being reflected by the second reflector to realize the cutting of the edge ring.
6. The laser dicing ring-removal method of a wafer according to claim 5, characterized in that: and the refracted laser beam has a second angle with the normal of the wafer after being reflected by a second reflector, and the second angle is adjusted to enable the reflected laser beam to irradiate the edge ring to form a cutting width which is larger than the width of the reflected laser beam, so that cracks generated in the cutting process are reduced.
7. The laser dicing ring-removal method of a wafer according to claim 6, characterized in that: the second angle is equal to the exit angle of the beam splitter.
8. The laser dicing ring-removal method of a wafer according to claim 1, characterized in that: in the second step, the energy attenuation of the spectroscope to the incident laser beam is less than 20%.
9. The laser dicing ring-removing method of a wafer according to claim 1 or 8, characterized in that: the ratio of the energy of the reflected laser beam to the energy of the refracted laser beam is 10: 1-1: 10.
10. The laser dicing ring-removal method of a wafer according to claim 1, characterized in that: the incident angle of the incident laser beam to the spectroscope is 0-90 degrees.
11. The laser dicing ring-removal method of a wafer as claimed in claim 10, wherein: the included angle between the cutting beam of the reflected laser beam reflected by the first reflecting mirror and the cutting beam of the refracted laser beam reflected by the second reflecting mirror is 0-360 degrees.
12. The laser dicing ring-removal method of a wafer according to claim 1, characterized in that: and thinning the wafer in the step one.
13. The laser dicing ring-removal method of a wafer of claim 12, wherein: the thinning process of the wafer comprises Taiko thinning.
14. The laser dicing ring-removing method of a wafer according to claim 12 or 13, characterized in that: the thickness of the thinned wafer is tens of microns to hundreds of microns.
15. The laser dicing ring-removing method of a wafer according to claim 12 or 13, characterized in that: the width of the edge ring is several millimeters or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011462759.3A CN112705859A (en) | 2020-12-14 | 2020-12-14 | Laser cutting ring-removing method for wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011462759.3A CN112705859A (en) | 2020-12-14 | 2020-12-14 | Laser cutting ring-removing method for wafer |
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| CN112705859A true CN112705859A (en) | 2021-04-27 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114535836A (en) * | 2022-03-25 | 2022-05-27 | 华虹半导体(无锡)有限公司 | Method for cutting wafer |
| CN114571616A (en) * | 2022-02-18 | 2022-06-03 | 华虹半导体(无锡)有限公司 | Wafer ring removing device and ring removing method |
| CN117253829A (en) * | 2023-11-17 | 2023-12-19 | 沈阳和研科技股份有限公司 | Control method and system for ultra-thin wafer ring removal |
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| CN117253829A (en) * | 2023-11-17 | 2023-12-19 | 沈阳和研科技股份有限公司 | Control method and system for ultra-thin wafer ring removal |
| CN117253829B (en) * | 2023-11-17 | 2024-01-19 | 沈阳和研科技股份有限公司 | Control method and system for ultra-thin wafer ring removal |
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