CN117218981A - Testing device and testing method - Google Patents

Abstract

The invention provides a testing device and a testing method, wherein the testing device comprises a first probe, a second probe, a testing circuit and a light-emitting unit, wherein the first probe is used for being contacted with a first bonding pad in an array layer to be tested, and the first bonding pad is electrically connected with a data line in the array layer to be tested; the second probe is used for contacting with a second bonding pad in the array layer to be tested, and the second bonding pad is electrically connected with a scanning circuit in the array layer to be tested; the test circuit is electrically connected with the first probe and the second probe, and inputs scanning signals to the array layer to be tested through the second probe; the light-emitting unit is electrically connected with the first probe and the test circuit and comprises a first light-emitting device and a second light-emitting device which are connected in parallel, wherein the conduction directions of the first light-emitting device and the second light-emitting device are different. The accuracy of the current test can be improved by connecting the first light emitting device and the second light emitting device in parallel and having different conducting directions.

Description

Testing device and testing method

Technical Field

The invention belongs to the technical field of display, and particularly relates to a testing device and a testing method.

Background

In the current testing process of the array layer, a current type electrical test can be adopted for part of the array layer, and specifically: the current type electrical test technology can realize the test of local pixel circuits or all pixel circuits in the array layer.

However, current testing precision is limited at present, and in different testing stages, the current in an array layer is at nA level sometimes and at pA level sometimes only; many kinds of thin film transistor (Thin Film Transistor, TFT) leakage defects cannot be tested using current test devices, so that the defects are detected; the specific cause of the detected defects cannot be determined, the false detection rate is high, the reliability of the detected defects is low, and the occurrence condition of the real defects of the production line of the array factory cannot be truly reflected.

Therefore, it is necessary to use a testing device with high detection accuracy to improve the detection accuracy.

Disclosure of Invention

The invention provides a testing device and a testing method, which can improve the accuracy of current testing.

In order to solve the technical problems, the invention adopts a technical scheme that: the testing device comprises a first probe, a second probe, a testing circuit and a light-emitting unit, wherein the first probe is used for being in contact with a first bonding pad in an array layer to be tested, and the first bonding pad is electrically connected with a data line in the array layer to be tested; the second probe is used for contacting with a second bonding pad in the array layer to be tested, and the second bonding pad is electrically connected with a scanning circuit in the array layer to be tested; the test circuit is electrically connected with the first probe and the second probe, and inputs scanning signals to the array layer to be tested through the second probe; the light-emitting unit is electrically connected with the first probe and the test circuit and comprises a first light-emitting device and a second light-emitting device which are connected in parallel, wherein the conduction directions of the first light-emitting device and the second light-emitting device are different.

In an embodiment, the testing device further comprises a camera and a processor, wherein the camera is used for shooting the light emitting unit to obtain a target image; the processor is electrically connected with the camera and is used for analyzing the target image to determine the lighting condition of the target pixel, wherein the target pixel is electrically connected with the data line electrically connected with the first bonding pad and the scanning circuit electrically connected with the second bonding pad at the same time.

In an embodiment, the number of the first probes, the second probes and the light emitting units is multiple, the first probes are in one-to-one correspondence with the light emitting units, the light emitting units are electrically connected with the corresponding first probes and the test circuit, the first probes are used for being in contact with different first bonding pads in the same array layer to be tested, and the second probes are used for being in contact with different second bonding pads in the same array layer to be tested.

In an embodiment, the number of the first probes, the second probes and the light emitting units is multiple, the first probes and the light emitting units are in one-to-one correspondence, and the light emitting units are electrically connected with the corresponding first probes and the test circuit; the first probes form a plurality of first probe groups, the second probes form a plurality of second probe groups, and the light-emitting units form a plurality of light-emitting groups; the first probes in the same first probe group, the second probes in the same second probe group and the light-emitting units in the same light-emitting group are respectively and electrically connected with the same array layer to be tested, and the first probes in different first probe groups, the second probes in different second probe groups and the light-emitting units in different light-emitting groups are respectively and electrically connected with different array layers to be tested; the first probe groups, the second probe groups and the light-emitting units are in one-to-one correspondence, and the corresponding first probe groups, second probe groups and light-emitting units are electrically connected with the same array layer to be tested.

In one embodiment, the test device further comprises a first carrier substrate and a pin card, wherein the test circuit is formed on the first carrier substrate; the needle cards are arranged on the first bearing substrate, the number of the needle cards is multiple, the needle cards, the first probe groups and the second probe groups are in one-to-one correspondence, and the first probes in the first probe groups and the second probes in the second probe groups are all arranged on the corresponding needle cards.

In an embodiment, the light emitting units in the light emitting groups corresponding to the first probe group are integrated on the pin cards corresponding to the first probe group.

In an embodiment, the testing device further includes a second carrier substrate, and the light emitting units in all the light emitting groups are formed on the second carrier substrate.

In an embodiment, the first light emitting device includes a first electrode layer, a first light emitting material layer, and a second electrode layer sequentially stacked; the second light-emitting device comprises a third electrode layer, a second light-emitting material layer and a fourth electrode layer which are sequentially stacked; the first electrode layer and the third electrode layer are electrically connected with the first probe while being electrically connected, and the second electrode layer and the fourth electrode layer are insulated and are respectively and electrically connected with the test circuit.

The invention adopts another technical scheme that: there is provided a test method applied to the test device of any one of the above embodiments, the test method including: contacting the first probe with a first bonding pad in the array layer to be tested; contacting the second probe with a second bonding pad in the array layer to be tested; and determining the light emitting condition of the target pixel according to the light emitting condition of the light emitting unit, wherein the target pixel is electrically connected with the data line electrically connected with the first bonding pad and the scanning circuit electrically connected with the second bonding pad at the same time.

In an embodiment, the step of determining the light emitting condition of the target pixel according to the light emitting condition of the light emitting unit includes: shooting the light-emitting unit by using a camera to obtain a target image; the target image is analyzed to determine the lighting of the target pixel.

The beneficial effects of the invention are as follows: the invention sets the first probe to contact with the first bonding pad in the array layer to be tested, and the second probe to contact with the second bonding pad in the array layer to be tested, thereby selecting the tested pixel. Meanwhile, the testing device comprises a light-emitting unit, so that the testing device can detect tiny current flowing through the pixels, and the testing accuracy is improved. In addition, the light-emitting unit comprises a first light-emitting device and a second light-emitting device which are connected in parallel, and the conduction directions of the first light-emitting device and the second light-emitting device are different, so that when current flows from the test circuit to the array layer to be tested, one of the first light-emitting device and the second light-emitting device emits light, and when current flows from the array layer to be tested to the test circuit, the other of the first light-emitting device and the second light-emitting device emits light, thereby accurately determining the current flow direction in the array layer to be tested and improving the detection accuracy.

Drawings

For a clearer description of the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the description below are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art, wherein:

FIG. 1 is a schematic diagram of an embodiment of a testing device of the present invention in operation;

FIG. 2 is a schematic diagram of an embodiment of the present invention during operation of a first probe;

FIG. 3 is a schematic diagram of an embodiment of a light emitting unit arrangement in the present invention;

fig. 4 is a schematic view of a structure of another embodiment of the light emitting unit arrangement in the present invention;

FIG. 5 is a schematic diagram of an embodiment of a light emitting unit according to the present invention;

FIG. 6 is a schematic circuit diagram of an embodiment of a pixel circuit to be tested;

FIG. 7 is a schematic diagram of an embodiment of current flow in a pixel circuit to be tested;

FIG. 8 is a schematic diagram of another embodiment of current flow in a pixel circuit to be tested;

FIG. 9 is a flow chart of an embodiment of a testing method according to the present invention;

FIG. 10 is a flowchart of an embodiment corresponding to the step S3 in FIG. 9;

reference numerals illustrate: 1. a test circuit; 11. a first probe; 13. a light emitting unit; 14. a first light emitting device; 15. a second light emitting device; 16. a camera; 17. a first carrier substrate; 18. a needle card; 19. a second carrier substrate; 2. an array layer; 21. a first bonding pad; 22. a second bonding pad; 23. a data line; 24. a scanning line; 31. a first electrode layer; 32. a first luminescent material layer; 33. a second electrode layer; 34. a third electrode layer; 35. a second luminescent material layer; 36. and a fourth electrode layer.

Detailed Description

The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

Referring to fig. 1 and 2, the present invention provides a testing device, which includes a first probe 11, a second probe, a testing circuit 1 and a light emitting unit 13, wherein the first probe 11 is used for contacting with a first pad 21 in an array layer 2 to be tested, and the first pad 21 is electrically connected with a data line 23 in the array layer 2 to be tested; the second probe is used for contacting with a second bonding pad 22 in the array layer 2 to be tested, and the second bonding pad 22 is electrically connected with a scanning circuit in the array layer 2 to be tested; the test circuit 1 is electrically connected with the first probe 11 and the second probe, and the test circuit 1 inputs scanning signals to the array layer 2 to be tested through the second probe; the light emitting unit 13 is electrically connected to the first probe 11 and the test circuit 1, and the light emitting unit 13 includes a first light emitting device 14 and a second light emitting device 15 connected in parallel, wherein the conduction directions of the first light emitting device 14 and the second light emitting device 15 are different.

Specifically, the first probe 11 is made of a conductive material, and the first pad 21 in the array layer 2 to be tested is also made of a conductive material, so that when the first probe 11 and the first pad 21 are in contact, signal conduction between the first probe 11 and the first pad 21 can be achieved. Meanwhile, the first bonding pad 21 is electrically connected with the data line 23 in the array layer 2 to be tested, that is, the testing device is contacted with the first bonding pad 21 through the first probe 11, so that the electric signal transmitted by the data line 23 in the array layer 2 to be tested can be obtained.

Likewise, the second probe is made of a conductive material, and the second pad 22 in the array layer 2 to be tested is also made of a conductive material, so that when the second probe is in contact with the second pad 22, signal conduction between the second probe and the second pad 22 can be achieved. Meanwhile, the second bonding pad 22 is electrically connected with the scanning circuit in the array layer 2 to be tested, that is, the testing device is contacted with the second bonding pad 22 through the second probe, so that the electric signal transmitted by the scanning circuit in the array layer 2 to be tested can be obtained. Specifically, the scan circuit includes a plurality of scan lines 24.

Meanwhile, the test circuit 1 is contacted with the second bonding pad 22 through the second probe, so that the test circuit 1 can obtain a scanning signal generated by the scanning circuit through the second probe, and the pixel circuit units in the array layer 2 to be tested can be scanned in sequence in the test process, so that the pixel to be tested can be selected, and the test device can test the luminous condition of the selected pixel.

Meanwhile, in the light emitting unit 13, the conduction directions of the first light emitting device 14 and the second light emitting device 15 are different, and if the first light emitting device 14 is turned on to emit light when current flows from the test circuit 1 to the light emitting unit 13, the second light emitting device 15 is turned on to emit light when current flows from the light emitting unit 13 to the test circuit 1, so that the current flow direction in the array layer 2 to be tested can be determined from the light emitting conditions of the first light emitting device 14 and the second light emitting device 15. And it will be appreciated that when neither the first light emitting device 14 nor the second light emitting device 15 emits light, it can be determined that no current is flowing through the selected tested pixel.

As can be seen from the above, the present invention provides that the first probe 11 is in contact with the first pad 21 in the array layer 2 to be tested, and the second probe is in contact with the second pad 22 in the array layer 2 to be tested, so that the pixel to be tested can be selected. Meanwhile, the testing device comprises a light-emitting unit 13, so that the testing device can detect tiny current flowing through the pixels, and the testing accuracy is improved. In addition, the light emitting unit 13 includes a first light emitting device 14 and a second light emitting device 15 connected in parallel, and the conduction directions of the first light emitting device 14 and the second light emitting device 15 are different, so that when current flows from the test circuit 1 to the array layer 2 to be tested, one of the first light emitting device 14 and the second light emitting device 15 emits light, and when current flows from the array layer 2 to be tested to the test circuit 1, the other of the first light emitting device 14 and the second light emitting device 15 emits light, thereby accurately determining the current flow direction in the array layer 2 to be tested and improving the detection accuracy.

The same array layer 2 to be tested, the array layer 2 comprises a plurality of pixel circuit units which are arranged in a matrix, wherein the pixel circuit units in the same column are connected with the same data line 23, all the pixel circuit units in the array layer 2 to be tested are connected with the same number of scanning circuits, a plurality of first probes 11 are used for contacting with different first bonding pads 21 in the same array layer 2 to be tested, the first bonding pads 21 are connected with data signals in the pixel circuit units in the same column, a plurality of second probes are used for contacting with different second bonding pads 22 in the same array layer 2 to be tested, and the second bonding pads 22 are electrically connected with the scanning circuits.

Wherein the second probes are connected to all the second pads 22 in the same array layer 2 by different first probes 11 being connected to all the first pads 21 in the same array layer 2. When the testing device transmits a scanning signal to the array layer 2 to be tested through the second bonding pad 22, the scanning circuit scans the pixel circuit units in the array layer 2 to be tested line by line, and meanwhile, the first probe 11 is connected with the first bonding pad 21 electrically connected with data signals in the pixel circuit units in the same column. In the actual operation process, the scanning circuit scans the pixel circuit units in the array layer 2 to be tested one by one in the row direction, scans each row, and when the scanning circuit scans the pixel circuit units in the first row and the first column, the first probe 11 collects information of the data line 23 in the corresponding pixel circuit unit and transmits the information to the test circuit 1 through the first bonding pad 21 corresponding to the first column and the data line 23, so that the corresponding light emitting unit 13 can be lightened.

With continued reference to fig. 1, the testing device further includes a camera 16 and a processor (not shown), wherein the camera 16 is configured to capture the light emitting unit 13 to obtain a target image; the processor is electrically connected to the camera 16, and is configured to analyze the target image, determine the brightness of the light emitted by the light emitting unit 13, and determine the light emitting condition of the target pixel according to the brightness information, where the target pixel is electrically connected to the data line 23 electrically connected to the first pad 21 and the scan circuit electrically connected to the second pad 22.

Specifically, the target pixel is the currently selected pixel to be measured. In order to accurately determine the light emission condition of the target pixel, for example, the light emission intensity of the target pixel, in consideration of possible errors in human eye observation, the light emission unit 13 is photographed by the camera 16 to obtain a target image, and the light emission condition of the target pixel, for example, the light emission intensity of the target pixel, and thus the current flowing through the target pixel can be accurately determined by performing image analysis on the target image. It can be understood that the subjectivity of human eyes can be avoided by analyzing the target image to obtain the lighting condition of the target pixel, so that the accuracy of the test result is ensured.

In another embodiment, a processor may be integrated into the camera 16 such that the camera 16 may independently obtain the illumination of the target pixel from the captured target image.

In other embodiments, the camera 16 and the processor may not be included, and the light emission of the target pixel may be determined directly by the human eye, and thus the current of the target pixel may be determined.

With continued reference to fig. 1, the number of the first probes 11, the number of the second probes, and the number of the light emitting units 13 are all plural, the first probes 11 are in one-to-one correspondence with the light emitting units 13, the light emitting units 13 are electrically connected to the corresponding first probes 11 and the test circuit 1, the first probes 11 are used for contacting different first pads 21 in the same array layer 2 to be tested, and the second probes are used for contacting different second pads 22 in the same array layer 2 to be tested.

Specifically, the test apparatus includes a plurality of first probes 11, a plurality of second probes, and a plurality of light emitting units 13. In the testing device, the array layer 2 to be tested is tested through the plurality of first probes 11, the plurality of second probes and the plurality of light emitting units 13, so that a plurality of selected pixels can be tested at the same time, and the testing efficiency is improved.

In an embodiment, the number of the first probes 11, the second probes and the light emitting units 13 is plural, the plural first probes 11 are in one-to-one correspondence with the plural light emitting units 13, and the light emitting units 13 are electrically connected with the corresponding first probes 11 and the test circuit 1; the plurality of first probes 11 form a plurality of first probe groups, the plurality of second probes form a plurality of second probe groups, and the plurality of light emitting units 13 form a plurality of light emitting groups; the first probes 11 in the same first probe group, the second probes in the same second probe group and the light-emitting units 13 in the same light-emitting group are respectively and electrically connected with the same array layer 2 to be tested, and the first probes 11 in different first probe groups, the second probes in different second probe groups and the light-emitting units 13 in different light-emitting groups are respectively and electrically connected with different array layers 2 to be tested; the first probe groups, the second probe groups and the light-emitting units 13 are in one-to-one correspondence, and the corresponding first probe groups, second probe groups and light-emitting units 13 are electrically connected with the same array layer 2 to be tested.

The above arrangement may allow the testing device to test a plurality of array layers 2 under test simultaneously, for example, the testing device may perform current testing on 8 or 10 array layers 2 under test simultaneously.

Specifically, when the testing device tests a plurality of array layers 2 to be tested simultaneously, the first bonding pads 21 of the same array layer 2 to be tested are connected with the first probes 11 in the same first probe group, and the second bonding pads 22 of the same array layer 2 to be tested are connected with the second probes in the same second probe group. The first bonding pads 21 in the different array layers 2 to be tested are connected with the first probes 11 in the different first probe groups, the second bonding pads 22 in the different array layers 2 to be tested are connected with the second probes in the different second probe groups, and the light emitting units 13 in the different light emitting groups are correspondingly arranged with the first probes 11 in the different array layers 2 to be tested.

Referring to fig. 3 and 4, the testing device further includes a first carrier substrate 17 and a pin card 18, wherein the testing circuit 1 is formed on the first carrier substrate 17; the pin cards 18 are disposed on the first carrier substrate 17, the number of the pin cards 18 is plural, the plural pin cards 18, the plural first probe groups, and the plural second probe groups are in one-to-one correspondence, and the first probes 11 in the first probe groups and the second probes in the second probe groups are mounted on the corresponding pin cards 18.

Specifically, by disposing the test circuit 1 on the first carrier substrate 17 while disposing the plurality of pin cards 18 on the first carrier substrate 17, it is also possible to dispose the plurality of pin cards 18 on the first carrier substrate 17. One pin card 18 may be in one-to-one correspondence with one of the first probe group and one of the second probe group, so that the pin card 18 may be in one-to-one correspondence with the array layer 2 to be tested. When there are 8 pin cards 18 on the same first carrier substrate 17, the testing device can test 8 array layers 2 to be tested arranged in the same row at the same time. In addition, the first probes 11 in the same first probe group and the second probes in the same second probe group are all mounted on corresponding probe cards 18.

In an embodiment, the light emitting units 13 in the light emitting groups corresponding to the first probe group are integrated on the pin cards 18 corresponding to the first probe group. Specifically, since the first probe group is in contact with different first bonding pads 21 in the same array layer 2 to be tested, the light emitting units 13 in the light emitting group are in one-to-one correspondence with the first probes 11 of the first probe group, and meanwhile, the light emitting units 13 can be lightened according to the electric signals transmitted by the first probes 11, in order to timely obtain the circuit conduction condition and the current magnitude of the pixel circuit units in the corresponding array layer 2 to be tested, the light emitting units 13 in the light emitting group corresponding to the first probe group can be integrated on the probe card 18 corresponding to the first probe group. According to the light emitting condition of the light emitting unit 13 on the pin card 18, the information such as the circuit conduction condition or the current magnitude of the pixel circuit unit in the corresponding test array layer 2 can be obtained.

With continued reference to fig. 4, the testing apparatus further includes a second carrier substrate 19, and the light emitting units 13 in all the light emitting groups are formed on the second carrier substrate 19. By integrating the light emitting units 13 in all the light emitting groups on the second carrier substrate 19, analysis of the test results in all the array layers 2 under test tested simultaneously can be achieved by fixing the camera 16 above the second carrier substrate 19.

Referring to fig. 5, the first light emitting device 14 includes a first electrode layer 31, a first light emitting material layer 32, and a second electrode layer 33 stacked in this order; the second light emitting device 15 includes a third electrode layer 34, a second light emitting material layer 35, and a fourth electrode layer 36, which are sequentially stacked; the first electrode layer 31 and the third electrode layer 34 are electrically connected to the first probe 11, and the second electrode layer 33 and the fourth electrode layer 36 are electrically connected to the test circuit 1 while being insulated from each other.

Specifically, the first light emitting device 14 is similar to the second light emitting device 15 in structure, and includes two electrode layers and one light emitting material layer, wherein the first electrode layer 31 and the third electrode layer 34 are electrically connected, so that the first electrode layer 31 and the third electrode layer 34 can be continuous, and thus the manufacturing efficiency can be improved.

In an application scenario, when the voltage in the data line 23 in the pixel circuit is higher than the voltage of the test circuit 1, the first light emitting device 14 is turned on, the second light emitting device 15 does not emit light, and if the first light emitting device 14 is not turned on or the second light emitting device 15 emits light, the pixel current abnormality can be judged; when the voltage of the pin card 18 is higher than the voltage of the data line 23 in the measured pixel circuit, the second light emitting device 15 is turned on, the first light emitting device 14 does not emit light, and the pixel current abnormality can be judged if the second light emitting device 15 is not turned on or the first light emitting device 14 emits light.

With continued reference to fig. 5, the first light emitting material layer and the second light emitting material layer each include a hole injection layer HIL, a hole transport layer HTL, a light emitting layer, an electron transport layer ETL, and an electron injection layer EIL, where the arrangement order of the hole injection layer HIL, the hole transport layer HTL, the light emitting layer, the electron transport layer ETL, and the electron injection layer EIL in the first light emitting material layer is opposite to the arrangement order of the second light emitting material layer along the same direction, so that the conduction directions of the first light emitting device and the second light emitting device are different.

In one embodiment, the first light emitting device 14 and the second light emitting device 15 are light emitting diodes, and the intensity of the light emission is related to the magnitude of the current flowing through the light emitting diodes.

Please refer to fig. 6, 7 and 8. The array layer 2 to be tested includes a plurality of pixel circuit units, fig. 6 shows a 7T1C pixel circuit, that is, the pixel circuit has 7 transistors and 1 capacitor, wherein the fourth transistor M4 and the sixth transistor M6 are dual-gate transistors, and the seventh transistor M7 and the eighth transistor M8 are dual-gate transistors. When the testing device tests the array layer 2 to be tested, the paths between the testing device and each pixel circuit unit in the array layer 2 to be tested are sequentially conducted for testing, and the probes except the first probe 11 and the second probe can be contacted with signals in the pixel circuit units, namely, the testing device can test the array layer 2 to be tested by adopting an array test full-contact (Array Test full contact) technology, and can realize loading of accurate puncture corresponding signals. The pixel circuit shown in fig. 6 is merely an example, and is convenient for illustration. The testing device of the invention can be applied to a plurality of different pixel circuits.

In one embodiment, when the testing device tests the pixel circuit, referring to R1 in fig. 7, in the first stage, the testing device charges the capacitor, specifically, the testing device charges the capacitor C1 by applying a voltage value to the pixel circuit unit at a reference voltage (Vref) terminal, and the voltage enters the pixel circuit unit from the Vref terminal, passes through the seventh transistor M7 and the eighth transistor M8, reaches the capacitor C1, and charges the capacitor C1.

Referring to R2 in fig. 7, in the second stage, when the capacitor discharges, the capacitor reaches the data end (Vdata) position through the fourth transistor M4, the sixth transistor M6, the third transistor M3 and the first transistor M1, and the first probe 11 is connected to the data line 23, so that the paths in the testing device and the pixel circuit are turned on, and if the transistors and the connection lines in R2 are not abnormal, the corresponding light emitting unit 13 is turned on.

Referring to R3 in fig. 8, in the third stage, the test device inputs an electrical signal to the high power voltage line VDD, so that the electrical signal reaches the Vdata terminal through the second transistor M2 and the first transistor M1. Specifically, before the third stage, a step of charging the capacitor may also be performed, as shown in R1 in fig. 7, where the testing device applies a voltage value to the pixel circuit unit at the reference voltage (Vref) end, and the voltage enters the pixel circuit unit from the Vref end, passes through the seventh transistor M7 and the eighth transistor M8, reaches the capacitor C1, and charges the capacitor C1. After the capacitor is charged, so that in the third stage, when the capacitor C1 is charged, the third transistor M3 is turned on by the Vref voltage driving.

Referring to R4 in fig. 8, in the fourth stage, an electrical signal is input to the Vref terminal in the testing device, so that the paths among the Vref, the ninth transistor M9, the fifth transistor M5, the third transistor M3, the first transistor M1 and the Vdata are turned on, and the Vdata is read. Specifically, the ninth transistor M9 is turned on by the second Scan signal Scan2, the fifth transistor M5 is turned on by the light emitting signal line EM, the third transistor M3 is turned on by the capacitor C1, and the first transistor M1 is turned on by the second Scan signal Scan 2.

In an embodiment, the tests of the third stage and the fourth stage may be combined together, so that the electrical signals are simultaneously input to the VDD and Vref ends of the high power voltage line in the test device, and after the electrical signals are connected to the data line 23 through the first probe 11, the paths in the test device and the pixel circuit are turned on, and the test device may measure whether the pixel circuit is turned on. The pixel circuit further includes a first Scan signal Scan1 and a light emitting device OLED.

Referring to fig. 9, the present invention further provides a testing method, which can be applied to the testing device described in the above embodiment, and the testing method includes:

s1, the first probes 11 are contacted with the first bonding pads 21 in the array layer 2 to be tested.

The first probes 11 are used for contacting with first bonding pads 21 in the array layer 2 to be tested, and the first bonding pads 21 are electrically connected with data wires 23 in the array layer 2 to be tested; the data signals in the first pads 21 can be led out to the testing device by means of the first probes 11.

And S2, contacting the second probe with a second bonding pad 22 in the array layer 2 to be tested.

The second probe is used for contacting with a second bonding pad 22 in the array layer 2 to be tested, and the second bonding pad 22 is electrically connected with a scanning circuit in the array layer 2 to be tested; the test device may obtain the electrical signal transferred by the scanning circuit in the array layer 2 to be tested by contacting the second probe with the second pad 22.

In an embodiment, the step of contacting the first probe 11 with the first pad 21 in the array layer 2 to be tested and the step of contacting the second probe with the second pad 22 in the array layer 2 to be tested may be performed simultaneously. When the testing device tests the array layer 2 to be tested, the first probe 11 and the second probe in the testing device can be contacted with the array layer 2 to be tested at the same time.

And S3, determining the light emitting condition of the target pixel according to the light emitting condition of the light emitting unit 13, wherein the target pixel is electrically connected with the data line 23 electrically connected with the first bonding pad 21 and the scanning circuit electrically connected with the second bonding pad 22 at the same time.

The data line 23 electrically connected to the first pad 21 through the target pixel and the scanning circuit electrically connected to the second pad 22 are simultaneously electrically connected. So that a part of circuits in the pixel circuit units corresponding to the target pixels in the array layer 2 to be tested are conducted, and the light emitting units 13 are lighted by passing current. For the light emission situation of the light emitting unit 13, it can be determined whether or not there is a current in the array layer 2 to be tested.

In addition, whether the corresponding pixel circuit units in the array layer to be detected have defects can be judged according to the light-emitting condition of the light-emitting units. If a defective pixel circuit unit exists, the pixel circuit unit can be positioned through a data line and a scanning circuit. Specifically, the array layer to be tested is regarded as a matrix, the extending direction of the data lines is defined as a column direction, and the direction perpendicular to the column direction is defined as a row direction, wherein the pixel circuit units are arranged along the row direction and the column direction, so that the coordinates of the pixel circuit units are determined according to the arrangement positions of the pixel circuit units. The column coordinates of the pixel circuit units can be determined through the data lines, and the abscissa coordinates of the pixel circuit units can be determined through the scanning time sequences in the scanning circuits.

Referring to fig. 10, specifically, step S3 includes:

s31, the camera 16 is used to shoot the light emitting unit 13 to obtain a target image.

The light emission condition of the light emitting unit 13 can be accurately acquired using the camera 16, and the camera 16 obtains a target image by photographing the light emitting unit 13.

And S32, analyzing the target image to determine the luminous condition of the target pixel.

The luminance of the light emitted from the light emitting unit 13 can be determined by analyzing the target image, and the light emission condition of the target pixel can be determined based on the luminance information.

The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.

Claims (10)

1. A test device, comprising:

a first probe for contacting a first pad electrically connected to the data line in the array layer to be tested;

a second probe, which is used for contacting with a second bonding pad electrically connected with the scanning circuit in the array layer to be tested;

the test circuit is electrically connected with the first probe and the second probe, and inputs scanning signals to the array layer to be tested through the second probe;

and the light-emitting unit is electrically connected with the first probe and the test circuit and comprises a first light-emitting device and a second light-emitting device which are connected in parallel, wherein the conduction directions of the first light-emitting device and the second light-emitting device are different.

2. The test device of claim 1, wherein the test device comprises a plurality of test elements,

the test device further comprises:

a camera for shooting the light-emitting unit to obtain a target image;

and the processor is electrically connected with the camera and is used for analyzing the target image to determine the luminous condition of the target pixel, wherein the target pixel is electrically connected with the data line electrically connected with the first bonding pad and the scanning circuit electrically connected with the second bonding pad at the same time.

3. The test device of claim 1, wherein the test device comprises a plurality of test elements,

the number of the first probes, the second probes and the light-emitting units is multiple, the multiple first probes are in one-to-one correspondence with the multiple light-emitting units, the light-emitting units are electrically connected with the corresponding first probes and the test circuit,

the first probes are used for contacting with different first bonding pads in the same array layer to be tested, and the second probes are used for contacting with different second bonding pads in the same array layer to be tested.

4. The test device of claim 1, wherein the test device comprises a plurality of test elements,

the number of the first probes, the number of the second probes and the number of the light-emitting units are all multiple, the first probes are in one-to-one correspondence with the light-emitting units, and the light-emitting units are electrically connected with the corresponding first probes and the test circuit;

the plurality of first probes form a plurality of first probe groups, the plurality of second probes form a plurality of second probe groups, and the plurality of light emitting units form a plurality of light emitting groups;

the first probes in the same first probe group, the second probes in the same second probe group and the light-emitting units in the same light-emitting group are respectively and electrically connected with the same array layer to be tested, and the first probes in different first probe groups, the second probes in different second probe groups and the light-emitting units in different light-emitting groups are respectively and electrically connected with different array layers to be tested;

the first probe groups, the second probe groups and the light-emitting units are in one-to-one correspondence, and the corresponding first probe groups, second probe groups and light-emitting units are electrically connected with the same array layer to be tested.

5. The test device of claim 4, wherein the test device further comprises:

a first carrier substrate on which the test circuit is formed;

the pin cards are arranged on the first bearing substrate, the number of the pin cards is multiple, the pin cards, the first probe groups and the second probe groups are in one-to-one correspondence, and the first probes in the first probe groups and the second probes in the second probe groups are all arranged on the corresponding pin cards.

6. The test device of claim 5, wherein the test device comprises a plurality of test elements,

the light emitting units in the light emitting groups corresponding to the first probe groups are integrated on the needle cards corresponding to the first probe groups.

7. The test device of claim 5, wherein the test device further comprises:

the light emitting units in all the light emitting groups are formed on the second bearing substrate.

8. The test device of claim 1, wherein the test device comprises a plurality of test elements,

the first light-emitting device comprises a first electrode layer, a first light-emitting material layer and a second electrode layer which are sequentially stacked; the second light-emitting device comprises a third electrode layer, a second light-emitting material layer and a fourth electrode layer which are sequentially stacked;

the first electrode layer and the third electrode layer are electrically connected with the first probe while being electrically connected, and the second electrode layer and the fourth electrode layer are insulated and are respectively and electrically connected with the test circuit.

9. A test method applied to the test device according to any one of claims 1 to 8, the method comprising:

contacting the first probe with the first bonding pad in the array layer to be tested;

contacting the second probe with the second bonding pad in the array layer to be tested;

and determining the light emitting condition of a target pixel according to the light emitting condition of the light emitting unit, wherein the target pixel is electrically connected with the data line electrically connected with the first bonding pad and the scanning circuit electrically connected with the second bonding pad at the same time.

10. The test method according to claim 9, wherein,

the step of determining the light emitting condition of the target pixel according to the light emitting condition of the light emitting unit includes:

shooting the light-emitting unit by using a camera to obtain a target image;

and analyzing the target image to determine the luminous condition of the target pixel.