CN117199044A - High-gate breakdown voltage field effect transistor - Google Patents
High-gate breakdown voltage field effect transistor Download PDFInfo
- Publication number
- CN117199044A CN117199044A CN202311201323.2A CN202311201323A CN117199044A CN 117199044 A CN117199044 A CN 117199044A CN 202311201323 A CN202311201323 A CN 202311201323A CN 117199044 A CN117199044 A CN 117199044A
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- Prior art keywords
- field effect
- effect transistor
- breakdown voltage
- gate breakdown
- transistor
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- 230000005669 field effect Effects 0.000 title claims abstract description 63
- 230000015556 catabolic process Effects 0.000 title claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 33
- 230000001681 protective effect Effects 0.000 claims abstract description 20
- 238000009434 installation Methods 0.000 claims abstract description 15
- 238000007789 sealing Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000741 silica gel Substances 0.000 claims description 11
- 229910002027 silica gel Inorganic materials 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 3
- 238000001125 extrusion Methods 0.000 abstract description 3
- 230000006698 induction Effects 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Thyristors (AREA)
Abstract
The invention discloses a field effect transistor with high gate breakdown voltage, which comprises a transistor main body, wherein one end of the transistor main body is provided with a mounting plate, a hole body is arranged in the middle position inside the mounting plate, the bottom end of a mounting sleeve is provided with a metal protective shell, the top end of one side of the metal protective shell is movably provided with a threaded rod, and one side of the threaded rod is provided with a fixed block. This field effect transistor is through being provided with the subassembly such as installation cover, metal protection shell, fixed block and threaded rod, the pin exposes outside in this field effect transistor transportation, easily take place to buckle and damage, install the metal protection shell at the lateral wall of transistor main part through the installation cover of setting so that the metal protection shell suit protects this pin at the lateral wall of pin, make this metal protection shell be difficult for receiving the extrusion of external force in the transportation, metal protection shell adopts the metal material simultaneously, can short circuit the pin, place outside induction potential and break down the grid.
Description
Technical Field
The invention relates to the technical field of field effect transistors, in particular to a field effect transistor with high gate breakdown voltage.
Background
A transistor is one of the common basic components in an electronic product, and is a semiconductor component capable of amplifying or switching an electrical signal and power and stabilizing current, and one end of a field effect transistor is provided with three terminals, namely an S source electrode, a g gate electrode and a d drain electrode, respectively, and when the voltage between the gate electrode and the source electrode exceeds a certain value, the current suddenly increases, so that the transistor is broken down, and the phenomenon is that the field effect transistor with high gate breakdown voltage is generated.
Through retrieving, refer to the silicon carbide semiconductor field effect transistor of application number CN201820354865.1 disclosure, including field effect transistor shell body, projecting pole, collecting electrode and base, the bottom of field effect transistor shell body is provided with the transistor base, the inboard of transistor base is provided with the block room, the top of field effect transistor shell body is provided with the transistor top cap, projecting pole, collecting electrode and base pass through screw thread post and connecting hole and are connected with the connecting pipe. The fixing fixture block arranged at the bottom of the transistor and the clamping chamber arranged on the base of the transistor are designed, so that the connection of the fixing fixture block and the clamping chamber is realized, the connection stability of the fixing fixture block and the clamping chamber is greatly improved, the dislocation phenomenon is avoided, and the fixing of the fixing fixture block and the clamping chamber and the fixing hole arranged on the base of the transistor are realized through the design of the spring button arranged on the fixing fixture block and the fixing hole arranged on the base of the transistor, so that the fixing fixture block and the clamping chamber are greatly convenient to detach and install;
next, a junction field effect transistor disclosed in reference CN201821898028.1 includes: a substrate; a first conductivity type drift region; a first conductivity type source region; the second conductive type gate region surrounds the first conductive type source region in an enclosing structure, and a channel region of the junction field effect transistor comprises a limiting region surrounded by the second conductive type gate region; and a first conductive type drain region disposed apart from the second conductive type gate region. The channel opening and closing of the channel region is realized by the lateral depletion of the channel region through the P-type gate region. Therefore, by adjusting the interval between the P-type gate regions, the width of the channel region can be changed, and the pinch-off voltage can be changed. The invention can integrate a plurality of junction field effect transistors with different pinch-off voltages in the same circuit, can meet different circuit performance requirements, and effectively saves manufacturing cost;
in the above-mentioned application document, at first design mounting structure, increase its installation dismantlement's convenience, increase the suitability in same circuit with the junction type field effect transistor integration that a plurality of have different pinch-off voltages simultaneously, but in actual use, field effect transistor needs to transport, the in-process of transportation, the pin of field effect transistor bottom installation can lead to the fact the pin deformation to bend when meetting outside extrusion force in the transportation and damage, so provide a field effect transistor of high grid breakdown voltage now, the outside of this field effect transistor adds the metal protection shell, protect the pin in the transportation and avoid its damage of buckling.
In view of this, a novel field effect transistor with high gate breakdown voltage is proposed to solve the above problems.
Disclosure of Invention
The invention aims to provide a field effect transistor with high gate breakdown voltage so as to solve the problem that the pins provided in the background art are deformed and damaged by external extrusion in the transportation process.
In order to achieve the above purpose, the present invention provides the following technical solutions: the utility model provides a high gate breakdown voltage's field effect transistor, includes the transistor main part, the mounting piece is installed to the one end of transistor main part, the inside both sides of transistor main part all are provided with N type semiconductor, the inside one end of mounting piece is provided with s source electrode, one side of s source electrode is provided with g grid, one side of g grid is provided with d drain electrode, the pin is all installed to the one end of s source electrode, g grid and d drain electrode, the installation cover is installed to the bottom of transistor main part lateral wall, the metal protective housing is installed to the bottom of installation cover, the top activity of metal protective housing one side is provided with the threaded rod, and the fixed block is installed to one side of threaded rod.
Preferably, the cross section of the metal protection shell is larger than the cross section of the three groups of pins, and the metal protection shell is matched with the pins.
Preferably, the cross section of the mounting sleeve is larger than that of the transistor main body, and the mounting sleeve is matched with the transistor main body.
Preferably, one side inside the installation sleeve is uniformly provided with internal threads, and the installation sleeve and the fixed block are in threaded connection.
Preferably, a hole body is arranged at the middle position inside the mounting piece.
Preferably, one end of the mounting piece is elastically adjusted to form a dustproof protective sleeve, and a sealing groove is arranged at the edge of one end of the dustproof protective sleeve.
Preferably, a sealing strip is arranged at one end of the sealing groove, and one end of the sealing strip is fixed with the outer side wall of the hole body.
Preferably, the cross section of sealing strip and seal groove matches, constitute the block structure between sealing strip and the seal groove.
Preferably, a heat conducting silica gel is fixed on one side of the N-type semiconductor, and heat radiating fins are arranged on one side of the heat conducting silica gel.
Preferably, the two groups of heat dissipation fins are arranged, and the two groups of heat dissipation fins are symmetrically distributed relative to the central axis of the transistor main body.
Compared with the prior art, the invention has the beneficial effects that: the field effect transistor with high gate breakdown voltage not only realizes the protection of the pins in the transportation process of the field effect transistor and avoids the bending damage phenomenon of the pins in the transportation process, but also realizes the rust protection of the fixing bolts for installing the field effect transistor, improves the heat dissipation effect of the field effect transistor and avoids the high-temperature damage;
(1) The pin is exposed outside in the transportation process of the field effect transistor and is easy to bend and damage by arranging the installation sleeve, the metal protection shell is arranged on the outer side wall of the transistor main body, so that the metal protection shell is sleeved on the outer side wall of the pin to protect the pin, the metal protection shell is not easy to be extruded by external force in the transportation process, meanwhile, the metal protection shell is made of metal materials, the pin can be short-circuited, and an external induction potential is placed to break down a grid electrode;
(2) The field effect transistor is installed by screwing the field effect transistor into the corresponding installation position through the mounting piece by taking the fixing piece when the field effect transistor is used, the set dustproof protective sleeve can be turned and sleeved at the head position of the bolt to protect the bolt, and corrosion caused by external water and dust is prevented from affecting subsequent screwing and dismounting, so that the field effect transistor is convenient to dismount;
(3) Through being provided with components such as heat conduction silica gel and heat radiation fin, the N type semiconductor operation of this field effect transistor in-process that this field effect transistor used can produce certain heat, and heat conduction silica gel can dispel the heat through heat radiation fin after carrying out heat conduction to N type semiconductor when this N type semiconductor operation produced heat to improved the radiating effect of this field effect transistor, avoided the N type semiconductor to appear the too high phenomenon of temperature, excellent in use effect.
Drawings
FIG. 1 is a schematic cross-sectional elevation view of the present invention;
FIG. 2 is a schematic diagram of a rear view of a lead according to the present invention;
FIG. 3 is an enlarged schematic view of the structure of FIG. 1A according to the present invention;
FIG. 4 is a schematic cross-sectional elevation view of a metallic protective shell according to the present invention;
fig. 5 is a schematic top-down cross-sectional view of a transistor body according to the present invention;
fig. 6 is a schematic side sectional structure of the present invention.
In the figure: 1. a mounting piece; 2. a transistor body; 3. a mounting sleeve; 4. pins; 5. a fixed block; 6. a threaded rod; 7. a dustproof protective sleeve; 8. a hole body; 9. sealing grooves; 10. a sealing strip; 11. a metal protective shell; 12. s source electrode; 13. g grid electrode; 14. d drain electrode; 15. an N-type semiconductor; 16. thermally conductive silica gel; 17. and the heat dissipation fins.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-6, an embodiment of the present invention is provided: the field effect transistor with high gate breakdown voltage comprises a transistor main body 2, wherein a mounting plate 1 is mounted at one end of the transistor main body 2, a hole body 8 is formed in the middle position inside the mounting plate 1, N-type semiconductors 15 are arranged on two sides inside the transistor main body 2, an s source electrode 12 is arranged at one end inside the mounting plate 1, a g grid electrode 13 is arranged on one side of the s source electrode 12, a d drain electrode 14 is arranged on one side of the g grid electrode 13, pins 4 are mounted at one ends of the s source electrode 12, the g grid electrode 13 and the d drain electrode 14, a mounting sleeve 3 is mounted at the bottom end of the outer side wall of the transistor main body 2, a metal protective shell 11 is mounted at the bottom end of the mounting sleeve 3, a threaded rod 6 is movably arranged at the top end of one side of the metal protective shell 11, and a fixed block 5 is mounted at one side of the threaded rod 6;
the cross section of the metal protection shell 11 is larger than that of the three groups of pins 4, the metal protection shell 11 is matched with the pins 4, the protection of the pins 4 is more comprehensive, and the protection effect is better;
the cross section of the mounting sleeve 3 is larger than that of the transistor main body 2, the mounting sleeve 3 is matched with the transistor main body 2, the mounting sleeve 3 is tightly attached to the transistor main body 2, and the protection effect on the pins 4 is better;
one side of the inside of the mounting sleeve 3 is uniformly provided with internal threads, the mounting sleeve 3 and the fixed block 5 are in threaded connection, so that the fixed block 5 is conveniently pushed to move, the mounting sleeve 3 is locked on the outer side wall of the transistor main body 2 and is detached, and the use is more convenient;
specifically, as shown in fig. 1 and 3, when the field effect transistor is used, the metal protection shell 11 is sleeved on the outer side wall of the transistor main body 2 through the mounting sleeve 3, the threaded rod 6 is screwed to push the fixing block 5 to be attached to the outer side wall of the transistor main body 2, so that the metal protection shell 11 is mounted on the outer side wall of the transistor main body 2 through the mounting sleeve 3, then the pin 4 is protected in the process of transporting the field effect transistor, when the field effect transistor is required to be used, the threaded rod 6 is reversely rotated to pull the fixing block 5 to open the limit of the mounting sleeve 3, then the metal protection shell 11 is pulled to one end to take the metal protection shell 11 off the outer side wall of the transistor main body 2, the field effect transistor can be normally used, and the detached metal protection shell 11 can be collected for recycling.
One end of the mounting sheet 1 is elastically adjusted with a dustproof protective sleeve 7, a sealing groove 9 is arranged at the edge of one end of the dustproof protective sleeve 7, a sealing strip 10 is arranged at one end of the sealing groove 9, and one end of the sealing strip 10 is fixed with the outer side wall of the hole body 8;
the cross section of the sealing strip 10 is matched with that of the sealing groove 9, and a clamping structure is formed between the sealing strip 10 and the sealing groove 9, so that the dustproof protective sleeve 7 has better protective effect on the head of the fixing bolt;
specifically, as shown in fig. 1, 3 and 6, after the fixing bolt is screwed into the corresponding installation position of the field effect transistor through the hole body 8 to install the field effect transistor, the dustproof protecting sleeve 7 can be turned over to enable the sealing groove 9 at one end of the dustproof protecting sleeve 7 to be clamped with the sealing strip 10 on the outer side wall of the hole body 8, so that the dustproof protecting sleeve 7 is protected at the head position of the fixing bolt to seal and protect the fixing bolt, and corrosion of external dust and water to the fixing bolt is avoided, so that the fixing bolt can be conveniently and easily screwed after the fixing bolt is dismounted.
One side of the N-type semiconductor 15 is fixed with heat conduction silica gel 16, and one side of the heat conduction silica gel 16 is provided with heat dissipation fins 17;
the two groups of the radiating fins 17 are symmetrically distributed about the central axis of the transistor main body 2, so that the radiating effect is better, and more heat is discharged;
specifically, as shown in fig. 5, in the process of using the field effect transistor, the N-type semiconductor 15 on both sides of the inside of the field effect transistor operates and generates a certain temperature, and when the temperature is generated, the heat is conducted out by the heat conducting silica gel 16 fixed on one side of the N-type semiconductor 15 and then is discharged through the heat radiating fins 17, so that the heat radiating effect of the N-type semiconductor 15 is improved, and the generation of high temperature is avoided.
Working principle: when the field effect transistor is used, the field effect transistor is taken out, the fixing bolt is also fixed, the fixing bolt is screwed into the corresponding installation position of the field effect transistor through the hole body 8, after the field effect transistor is installed, the threaded rod 6 is reversely rotated to pull the fixing block 5 to open the limit of the installation sleeve 3, then the metal protection shell 11 is pulled to one end to be taken out from the outer side wall of the transistor main body 2, so that the metal protection shell 11 is exposed, then the metal protection shell 11 is pulled and adjusted to a proper position according to actual requirements, and the corresponding connection position is welded together for use, when the field effect transistor is used, the circuit functions of an amplifier, a switch, an oscillator, a voltage regulator and the like can be performed by utilizing the field effect transistor, in the use process of the field effect transistor, the N-type semiconductor 15 in the field effect transistor is operated to generate certain heat, and then the heat is led out by the heat conduction silica gel 16 and is rapidly discharged through the heat dissipation fins 17, so that the phenomenon of overhigh temperature is avoided.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A field effect transistor with high gate breakdown voltage comprising a transistor body (2), characterized in that: mounting piece (1) is installed to one end of transistor main part (2), inside both sides of transistor main part (2) all are provided with N type semiconductor (15), the inside one end of mounting piece (1) is provided with s source (12), one side of s source (12) is provided with g grid (13), one side of g grid (13) is provided with d drain (14), pin (4) are all installed to one end of s source (12), g grid (13) and d drain (14), installation cover (3) are installed to the bottom of transistor main part (2) lateral wall, metal protective housing (11) are installed to the bottom of installation cover (3), the top activity of metal protective housing (11) one side is provided with threaded rod (6), and fixed block (5) are installed to one side of threaded rod (6).
2. A high gate breakdown voltage field effect transistor according to claim 1, wherein: the cross section of the metal protection shell (11) is larger than that of the three groups of pins (4), and the metal protection shell (11) is matched with the pins (4).
3. A high gate breakdown voltage field effect transistor according to claim 1, wherein: the cross section of the mounting sleeve (3) is larger than that of the transistor main body (2), and the mounting sleeve (3) is matched with the transistor main body (2).
4. A high gate breakdown voltage field effect transistor according to claim 1, wherein: internal threads are uniformly formed on one side of the inside of the mounting sleeve (3), and the mounting sleeve (3) and the fixed block (5) are in threaded connection.
5. A high gate breakdown voltage field effect transistor according to claim 1, wherein: a hole body (8) is arranged at the middle position inside the mounting piece (1).
6. A high gate breakdown voltage field effect transistor according to claim 1, wherein: one end of the mounting piece (1) is elastically adjusted to form a dustproof protective sleeve (7), and a sealing groove (9) is arranged at the edge of one end of the dustproof protective sleeve (7).
7. The high gate breakdown voltage field effect transistor of claim 6, wherein: one end of the sealing groove (9) is provided with a sealing strip (10), and one end of the sealing strip (10) is fixed with the outer side wall of the hole body (8).
8. The high gate breakdown voltage field effect transistor of claim 7, wherein: the sealing strip (10) is matched with the cross section of the sealing groove (9), and a clamping structure is formed between the sealing strip (10) and the sealing groove (9).
9. A high gate breakdown voltage field effect transistor according to claim 1, wherein: one side of the N-type semiconductor (15) is fixed with heat conduction silica gel (16), and one side of the heat conduction silica gel (16) is provided with heat radiation fins (17).
10. A high gate breakdown voltage field effect transistor according to claim 9, wherein: the radiating fins (17) are provided with two groups, and the two groups of radiating fins (17) are symmetrically distributed relative to the central axis of the transistor main body (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311201323.2A CN117199044A (en) | 2023-09-18 | 2023-09-18 | High-gate breakdown voltage field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311201323.2A CN117199044A (en) | 2023-09-18 | 2023-09-18 | High-gate breakdown voltage field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117199044A true CN117199044A (en) | 2023-12-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311201323.2A Pending CN117199044A (en) | 2023-09-18 | 2023-09-18 | High-gate breakdown voltage field effect transistor |
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| Country | Link |
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| CN (1) | CN117199044A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN210392125U (en) * | 2019-05-21 | 2020-04-24 | 无锡金碧微科技有限公司 | Protective sleeve for field effect transistor |
| CN111917249A (en) * | 2020-08-31 | 2020-11-10 | 上海法雷奥汽车电器系统有限公司 | Electrostatic protection device |
| CN212113683U (en) * | 2020-06-12 | 2020-12-08 | 无锡市新逵机械设备有限公司 | Improved semiconductor transistor packaging structure |
| CN218039176U (en) * | 2022-09-05 | 2022-12-13 | 江苏顺烨电子有限公司 | Three-phase diode rectifier bridge module |
| CN218385183U (en) * | 2022-08-26 | 2023-01-24 | 江西万年芯微电子有限公司 | Multi-pin chip packaging structure |
-
2023
- 2023-09-18 CN CN202311201323.2A patent/CN117199044A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN210392125U (en) * | 2019-05-21 | 2020-04-24 | 无锡金碧微科技有限公司 | Protective sleeve for field effect transistor |
| CN212113683U (en) * | 2020-06-12 | 2020-12-08 | 无锡市新逵机械设备有限公司 | Improved semiconductor transistor packaging structure |
| CN111917249A (en) * | 2020-08-31 | 2020-11-10 | 上海法雷奥汽车电器系统有限公司 | Electrostatic protection device |
| CN218385183U (en) * | 2022-08-26 | 2023-01-24 | 江西万年芯微电子有限公司 | Multi-pin chip packaging structure |
| CN218039176U (en) * | 2022-09-05 | 2022-12-13 | 江苏顺烨电子有限公司 | Three-phase diode rectifier bridge module |
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