CN212113683U - Improved semiconductor transistor packaging structure - Google Patents
Improved semiconductor transistor packaging structure Download PDFInfo
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- CN212113683U CN212113683U CN202021076125.XU CN202021076125U CN212113683U CN 212113683 U CN212113683 U CN 212113683U CN 202021076125 U CN202021076125 U CN 202021076125U CN 212113683 U CN212113683 U CN 212113683U
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Abstract
The utility model discloses a modified semiconductor transistor's packaging structure, concretely relates to semiconductor transistor field, including encapsulation casing and semiconductor transistor, the encapsulation casing includes first shrouding and second shrouding, and the outside fixed mounting of first shrouding and second shrouding has the thermoplastic sheet, and heat dissipation mechanism is installed in the surface embedding of first shrouding, and heat dissipation mechanism includes heat conduction slab and protruding fin, and semiconductor transistor has painted heat conduction silicone grease layer with heat dissipation mechanism's junction, and the opposite side fixed mounting of first shrouding and second shrouding has the stitch backplate. The utility model discloses a set up first shrouding and the second shrouding structure of laminating of mutually heat-moulding, the joint is pasted through the mode of hot melt to the heat-moulding board that utilizes the shrouding side, avoids the parcel encapsulation of traditional whole encapsulation, is convenient for carry out dismouting many times, and inside the reserving certain cavity of non-parcel structure be convenient for carry out the effluvium of semiconductor work heat.
Description
Technical Field
The utility model relates to a semiconductor transistor technical field, more specifically say, the utility model specifically is a modified semiconductor transistor's packaging structure.
Background
The semiconductor transistor package is a package for mounting a semiconductor integrated circuit chip, which not only plays a role in mounting, fixing, sealing, protecting the chip and enhancing the electric heating performance, but also is connected to pins of the package by wires through contacts on the chip, and the pins are connected to other devices by wires on a printed circuit board, thereby realizing the connection between an internal chip and an external circuit.
The transistor packaging in the current market mostly adopts the mode of direct plastic packaging to carry out whole encapsulation to the outside of transistor, and the plug breaks easily in the use, and encapsulation integrated into one piece does not have the restoration possibility, has brought the discomfort for the user to its heat dispersion of structure of whole encapsulation is poor can't derive fast in the use of transistor, and easy high temperature damages, has brought troublesome problem for the user.
It is therefore desirable to provide an improved package structure for a semiconductor transistor.
SUMMERY OF THE UTILITY MODEL
In order to overcome the above-mentioned defect of prior art, the embodiment of the utility model provides a modified semiconductor transistor's packaging structure, through setting up first shrouding and the second shrouding structure of mutually hot molding laminating, utilize the hot welding board of shrouding side to paste the joint through the mode of hot melt, and the heat conduction slab that utilizes metal copper sheet to make and the contact that heat conduction silicone grease layer structure can realize semiconductor transistor dispels the heat fast through fin structure and air to solve the problem that proposes in the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: an improved packaging structure of a semiconductor transistor comprises a packaging shell and the semiconductor transistor, the semiconductor transistor is fixedly arranged in the packaging shell, the end part of the semiconductor transistor is fixedly welded with a lead pin, the packaging shell comprises a first sealing plate and a second sealing plate, a thermoplastic connecting plate is fixedly arranged at the outer sides of the first sealing plate and the second sealing plate, the surface of the first sealing plate is embedded with a heat dissipation mechanism, the heat dissipation mechanism comprises a heat conduction plate and a raised fin, the bottom surface of the heat dissipation mechanism is mutually abutted against the surface of the semiconductor transistor, a heat conduction silicone grease layer is coated at the joint of the semiconductor transistor and the heat dissipation mechanism, one side fixed mounting of second shrouding has the installation otic placode, the opposite side fixed mounting of first shrouding and second shrouding has the stitch backplate, the fixed cover of stitch backplate connects in the outside of semiconductor transistor.
In a preferred embodiment, the stitch protection plate and the thermoplastic connecting plate are divided into an upper layer structure and a lower layer structure, two side structures of the stitch protection plate and the thermoplastic connecting plate are fixedly connected with the side surfaces of the first sealing plate and the second sealing plate respectively, and the stitch protection plate, the thermoplastic connecting plate and the first sealing plate are of an integrally formed structure.
In a preferred embodiment, the surface of the thermoplastic joint plate is coated with a hot melt adhesive layer, and the side thermoplastic joint plates of the first sealing plate and the second sealing plate are adhered and fixed with each other.
In a preferred embodiment, the two sides of the mounting ear plate are provided with mounting ear grooves, and the surface of the mounting ear plate is provided with fixing through holes.
In a preferred embodiment, the heat conducting plate sheet and the protruding fins are of an integral punch forming structure, and the heat dissipation mechanism is a metal copper material component.
In a preferred embodiment, the upper side and the lower side of the semiconductor transistor are respectively abutted against the bottom surface of the inner cavity of the package shell and the bottom surface of the heat dissipation mechanism, and the outer side of the semiconductor transistor is spaced from the two sides and the top surface of the inner cavity of the package shell.
The utility model discloses a technological effect and advantage:
1. the utility model discloses a first shrouding and the second shrouding structure that sets up mutual thermoplastic laminating, utilize the thermoplastic fishplate bar of shrouding side end to paste the joint through the mode of hot melt, avoid the parcel encapsulation of traditional whole encapsulation, be convenient for carry on the dismouting many times, and non-parcel structure inside reserve certain cavity and be convenient for carry on the effluvium of semiconductor work heat;
2. the utility model discloses an at packaging shell surface embedding heat dissipation mechanism, the heat conduction that utilizes the heat conduction slab and the heat conduction silicone grease layer structure that the metal copper sheet made can realize semiconductor transistor dispels the heat fast and through the contact of fin structure and air, guarantees the continuous operation of transistor, improves its life.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
Fig. 2 is a schematic perspective view of the present invention.
Fig. 3 is a schematic cross-sectional structure diagram of the present invention.
Fig. 4 is a schematic structural diagram of a position a in fig. 3 according to the present invention.
The reference signs are: 1. a package housing; 2. a semiconductor transistor; 3. a lead pin; 4. a stitch guard plate; 5. mounting an ear plate; 6. thermoplastic joint plates; 7. a heat dissipation mechanism; 8. a thermally conductive silicone layer; 11. a first seal plate; 12. a second seal plate; 51. mounting an ear groove; 52. a fixing through hole; 71. a heat conducting plate; 72. raised fins.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1-4, an improved package structure of a semiconductor transistor includes a package housing 1 and a semiconductor transistor 2, the semiconductor transistor 2 is fixedly mounted inside the package housing 1, the end of the semiconductor transistor 2 is fixedly welded with lead pins 3, the package housing 1 includes a first sealing plate 11 and a second sealing plate 12, a thermoplastic connecting plate 6 is fixedly mounted on the outer sides of the first sealing plate 11 and the second sealing plate 12, a heat dissipating mechanism 7 is mounted on the surface of the first sealing plate 11 in an embedded manner, the heat dissipating mechanism 7 includes a heat conducting plate 71 and a raised fin 72, the bottom surface of the heat dissipating mechanism 7 is abutted against the surface of the semiconductor transistor 2, a heat conducting silicone layer 8 is coated on the joint between the semiconductor transistor 2 and the heat dissipating mechanism 7, a mounting ear plate 5 is fixedly mounted on one side of the second sealing plate 12, and guard plates 4 are fixedly mounted on the other sides of the first sealing plate 11 and the second sealing, the stitch guard 4 is fixedly sleeved on the outer side of the semiconductor transistor 2.
The implementation mode is specifically as follows: through the arrangement of the first sealing plate 11 and the second sealing plate 12 which are mutually thermoplastic bonded, the thermoplastic connecting plate 6 at the side end of the sealing plates is bonded and connected in a hot melting mode, so that the wrapping and packaging of the traditional integral packaging are avoided, the repeated assembly and disassembly are convenient, and a certain cavity is reserved in the non-wrapping structure to facilitate the dissipation of the working heat of the semiconductor; additionally, the utility model discloses an at encapsulation casing 1 surface embedding heat dissipation mechanism 7, the heat conduction of semiconductor transistor 2 and the contact through fin structure and air is dispelled the heat fast to heat conduction slab 71 and the 8 structures on heat conduction silicone grease layer that utilize the metal copper sheet to make, guarantees the continuous operation of transistor, improves its life.
Wherein, two-layer structure about stitch backplate 4 and the thermoplastic connecting plate 6 divide into, stitch backplate 4 and the both sides structure of thermoplastic connecting plate 6 respectively with the side fixed connection of first shrouding 11 and second shrouding 12, stitch backplate 4, thermoplastic connecting plate 6 and first shrouding 11 are the integrated into one piece structure, realize fixed to the pressfitting of semiconductor transistor 2 upper and lower both sides to the link that utilizes the stitch backplate 4 protection lead wire stitch 3 of upper and lower both sides prevents to take place the rupture.
Wherein, the surface coating of the thermoplastic fishplate bar 6 has a hot melt adhesive layer, and the thermoplastic fishplate bar 6 of the first shrouding 11 and the 12 sides of second shrouding is pasted fixedly each other, realizes the hot melt bonding dismouting of being convenient for of first shrouding 11 and the 12 second shrouding.
Wherein, the two sides of the mounting ear plate 5 are provided with mounting ear grooves 51, and the surface of the mounting ear plate 5 is provided with fixing through holes 52, which is convenient for fixing the packaging structure.
The heat conducting plate 71 and the protruding fins 72 are formed by integral punching, and the heat dissipation mechanism 7 is a metal copper member, so that heat can be conveniently led out.
The upper side and the lower side of the semiconductor transistor 2 are respectively abutted to the bottom surface of the inner cavity of the packaging shell 1 and the bottom surface of the heat dissipation mechanism 7, the outer side of the semiconductor transistor 2 is provided with intervals with the two sides and the top surface of the inner cavity of the packaging shell 1, and a certain cavity is reserved in the semiconductor transistor 2 so as to facilitate the dissipation of semiconductor working heat.
The utility model discloses the theory of operation:
the first step is as follows: in the working process of the transistor, the heat conduction of the semiconductor transistor 2 can be realized by utilizing the heat conduction plate 71 made of the metal copper sheet and the heat conduction silicone layer 8 structure, and the heat absorbed by the heat dissipation mechanism 7 is quickly dissipated through the contact with air through the convex fins 72 on the surface of the heat conduction plate 71, so that the continuous operation of the transistor is ensured;
the second step is that: when the transistor is damaged or the pin is broken, the thermoplastic connecting plates 6 on the two sides of the packaging shell 1 can be heated through a hot air welding gun, so that the joint between the thermoplastic connecting plates 6 is hot-melted, the first sealing plate 11 and the second sealing plate 12 are separated to realize the disassembly and maintenance of the transistor, the hot melt adhesive can be coated on the surface of the thermoplastic connecting plate 6 after the new semiconductor transistor 2 is welded, and the heat-conducting silicone layer 8 is coated newly to carry out secondary installation and use, so that the maintenance is convenient.
The points to be finally explained are: first, in the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may be a mechanical connection or an electrical connection, or a communication between two elements, and may be a direct connection, and "upper," "lower," "left," and "right" are only used to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may be changed;
secondly, the method comprises the following steps: in the drawings of the disclosed embodiments of the present invention, only the structures related to the disclosed embodiments are referred to, and other structures can refer to the common design, and under the condition of no conflict, the same embodiment and different embodiments of the present invention can be combined with each other;
and finally: the above description is only for the preferred embodiment of the present invention and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. An improved packaging structure of a semiconductor transistor comprises a packaging shell (1) and a semiconductor transistor (2), wherein the semiconductor transistor (2) is fixedly installed inside the packaging shell (1), and a lead pin (3) is fixedly welded at the end part of the semiconductor transistor (2), and is characterized in that: the packaging shell (1) comprises a first closing plate (11) and a second closing plate (12), the outer sides of the first sealing plate (11) and the second sealing plate (12) are fixedly provided with a thermoplastic connecting plate (6), the surface of the first sealing plate (11) is embedded with a heat dissipation mechanism (7), the heat dissipation mechanism (7) comprises a heat conduction plate sheet (71) and a raised fin (72), the bottom surface of the heat dissipation mechanism (7) is mutually abutted with the surface of the semiconductor transistor (2), a heat-conducting silicone grease layer (8) is coated at the joint of the semiconductor transistor (2) and the heat dissipation mechanism (7), one side of the second sealing plate (12) is fixedly provided with a mounting ear plate (5), the other sides of the first sealing plate (11) and the second sealing plate (12) are fixedly provided with pin protection plates (4), the stitch guard plate (4) is fixedly sleeved on the outer side of the semiconductor transistor (2).
2. The improved packaging structure of a semiconductor transistor according to claim 1, wherein: two-layer structure about stitch backplate (4) and thermoplastic fishplate bar (6) divide into, the both sides structure of stitch backplate (4) and thermoplastic fishplate bar (6) respectively with the side fixed connection of first shrouding (11) and second shrouding (12), stitch backplate (4), thermoplastic fishplate bar (6) and first shrouding (11) are the integrated into one piece structure.
3. The improved packaging structure of a semiconductor transistor according to claim 1, wherein: the surface of the thermoplastic connecting plate (6) is coated with a hot melt adhesive layer, and the thermoplastic connecting plate (6) on the side surfaces of the first sealing plate (11) and the second sealing plate (12) are mutually adhered and fixed.
4. The improved packaging structure of a semiconductor transistor according to claim 1, wherein: mounting ear grooves (51) are formed in two sides of the mounting ear plate (5), and fixing through holes (52) are formed in the surface of the mounting ear plate (5).
5. The improved packaging structure of a semiconductor transistor according to claim 1, wherein: heat conduction board (71) and protruding fin (72) stamping forming structure as an organic whole, heat dissipation mechanism (7) are metal copper material component.
6. The improved packaging structure of a semiconductor transistor according to claim 1, wherein: the upper side and the lower side of the semiconductor transistor (2) are respectively abutted to the bottom surface of the inner cavity of the packaging shell (1) and the bottom surface of the heat dissipation mechanism (7), and the outer side of the semiconductor transistor (2) is provided with intervals with the two sides and the top surface of the inner cavity of the packaging shell (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021076125.XU CN212113683U (en) | 2020-06-12 | 2020-06-12 | Improved semiconductor transistor packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021076125.XU CN212113683U (en) | 2020-06-12 | 2020-06-12 | Improved semiconductor transistor packaging structure |
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| CN212113683U true CN212113683U (en) | 2020-12-08 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117199044A (en) * | 2023-09-18 | 2023-12-08 | 先之科半导体科技(东莞)有限公司 | High-gate breakdown voltage field effect transistor |
| CN117199020A (en) * | 2023-08-09 | 2023-12-08 | 南通思凯光电有限公司 | Packaging module of semiconductor element |
| CN117238876A (en) * | 2023-09-19 | 2023-12-15 | 先之科半导体科技(东莞)有限公司 | MOS transistor capable of reducing tunneling leakage current |
| CN117276206A (en) * | 2023-09-12 | 2023-12-22 | 先之科半导体科技(东莞)有限公司 | MOS transistor assembly with low static loss |
| CN117238876B (en) * | 2023-09-19 | 2024-05-31 | 先之科半导体科技(东莞)有限公司 | MOS transistor capable of reducing tunneling leakage current |
-
2020
- 2020-06-12 CN CN202021076125.XU patent/CN212113683U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117199020A (en) * | 2023-08-09 | 2023-12-08 | 南通思凯光电有限公司 | Packaging module of semiconductor element |
| CN117199020B (en) * | 2023-08-09 | 2024-04-19 | 南通思凯光电有限公司 | Packaging module of semiconductor element |
| CN117276206A (en) * | 2023-09-12 | 2023-12-22 | 先之科半导体科技(东莞)有限公司 | MOS transistor assembly with low static loss |
| CN117199044A (en) * | 2023-09-18 | 2023-12-08 | 先之科半导体科技(东莞)有限公司 | High-gate breakdown voltage field effect transistor |
| CN117238876A (en) * | 2023-09-19 | 2023-12-15 | 先之科半导体科技(东莞)有限公司 | MOS transistor capable of reducing tunneling leakage current |
| CN117238876B (en) * | 2023-09-19 | 2024-05-31 | 先之科半导体科技(东莞)有限公司 | MOS transistor capable of reducing tunneling leakage current |
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