CN117174777A - Absorption plate structure of amorphous silicon infrared detector and process method - Google Patents
Absorption plate structure of amorphous silicon infrared detector and process method Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000010521 absorption reaction Methods 0.000 title abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 120
- 239000002184 metal Substances 0.000 claims abstract description 120
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 88
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 87
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 20
- 239000010941 cobalt Substances 0.000 claims abstract description 20
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002210 silicon-based material Substances 0.000 claims abstract description 20
- 239000010936 titanium Substances 0.000 claims abstract description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 14
- 239000010937 tungsten Substances 0.000 claims abstract description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 379
- 239000006096 absorbing agent Substances 0.000 claims description 38
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 8
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 238000001514 detection method Methods 0.000 abstract description 32
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 239000000463 material Substances 0.000 description 9
- 150000002431 hydrogen Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910001260 Pt alloy Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The disclosure relates to an absorption plate structure of an amorphous silicon infrared detector and a process method thereof, comprising the following steps: the heat sensitive layer, the metal silicide layer, the dielectric layer and the electrode layer; the thermosensitive layer comprises an amorphous silicon material; the metal silicide layer is positioned in the electrode connecting area of the thermosensitive layer and is positioned between the thermosensitive layer and the electrode layer; the medium layer is positioned on the resistor area of the thermosensitive layer to protect the amorphous silicon resistor from forming metal silicide; the electrode layer is positioned on one side of the metal silicide layer, which is far away from the thermosensitive layer, and the electrode layer is made of one of titanium nitride, titanium, nickel platinate, nickel, tungsten and cobalt; the noise of the structure formed by the thermosensitive layer, the metal silicide layer and the electrode layer is smaller than that of the structure formed by the electrode layer and the thermosensitive layer. Through the technical scheme of the disclosure, the noise of the infrared detector is reduced, the detection rate and sensitivity of the infrared detector are improved, and the infrared detection capability of the infrared detector is improved.
Description
Technical Field
The disclosure relates to the technical field of infrared detection, in particular to an absorption plate structure of an amorphous silicon infrared detector and a process method.
Background
The non-contact infrared detector comprises a non-contact temperature measuring sensor, for example, and the detection principle is that the infrared detector converts an infrared radiation signal emitted by a target object to be detected into a thermal signal, the thermal signal is converted into an electric signal through a detector sensitive element, and then the electric signal is processed and output through a circuit chip, so that the infrared detector realizes an infrared detection function.
In the related art, because amorphous silicon is a semiconductor material, when the amorphous silicon is used as a thermosensitive layer to be in direct contact with an electrode layer, noise between the thermosensitive layer and the electrode layer is large, so that noise of an infrared detector is large, the detection rate and sensitivity of the infrared detector are reduced due to the noise, and the infrared detection capability of the infrared detector is affected.
Disclosure of Invention
In order to solve the technical problems or at least partially solve the technical problems, the disclosure provides an absorption plate structure and a process method of an amorphous silicon infrared detector, which reduce noise of the infrared detector, improve detection rate and sensitivity of the infrared detector, and improve infrared detection capability of the infrared detector.
In a first aspect, the present disclosure provides an absorber plate structure of an amorphous silicon infrared detector, comprising:
the heat sensitive layer, the metal silicide layer, the dielectric layer and the electrode layer;
the thermosensitive layer comprises an amorphous silicon material which is doped with one or more elements of boron, phosphorus, hydrogen, germanium, vanadium and oxygen and has a negative resistance temperature coefficient of more than 1.0%/K;
the metal silicide layer is positioned in an electrode connection region of the thermosensitive layer and is positioned between the thermosensitive layer and the electrode layer;
the dielectric layer is positioned on the resistor area of the thermosensitive layer and used for protecting the amorphous silicon resistor from forming metal silicide;
the electrode layer is positioned on one side of the metal silicide layer, which is away from the thermosensitive layer, and the electrode layer is made of one of titanium nitride, titanium, nickel platinate, nickel, tungsten and cobalt;
the noise of the structure formed by the thermosensitive layer, the metal silicide layer and the electrode layer is smaller than the noise of the direct contact between the electrode layer and the thermosensitive layer.
Optionally, the metal silicide layer includes one of nickel silicide, cobalt silicide, titanium silicide, and tungsten silicide.
Optionally, the dielectric layer includes: one or more of silicon oxide, silicon nitride or silicon oxynitride to ensure that the resistance of the amorphous silicon does not form a metal silicide.
Optionally, the absorber plate structure of the amorphous silicon infrared detector further includes: the first protection layer is positioned on one side of the electrode layer, which is away from the dielectric layer.
Optionally, the material constituting the first protective layer includes at least one or more of silicon nitride, aluminum oxide, silicon oxide, and silicon oxynitride.
In a second aspect, the present disclosure provides a process for fabricating an absorber plate structure of an amorphous silicon infrared detector, including:
forming a thermosensitive layer;
forming a patterned dielectric layer on the thermosensitive layer, wherein the dielectric layer is positioned on a resistor area of the thermosensitive layer;
forming a metal silicide layer on the thermosensitive layer; the metal silicide layer is contacted with the thermosensitive layer of the electrode connecting region;
forming a patterned electrode layer on the metal silicide layer and the dielectric layer;
the heat sensitive layer comprises an amorphous silicon material, wherein the amorphous silicon material is one or more elements of boron, phosphorus, hydrogen, germanium, vanadium and oxygen, and has a negative resistance temperature coefficient of more than 1.0%/K; the noise of the structure formed by the thermosensitive layer, the metal silicide layer and the electrode layer is smaller than the noise of the direct contact between the electrode layer and the thermosensitive layer.
Optionally, the forming a metal silicide layer on the thermosensitive layer includes:
forming a metal layer on the thermosensitive layer;
annealing the metal layer to enable one side of the metal layer facing the thermosensitive layer to react with the thermosensitive layer to form a metal silicide layer;
the metal layer comprises one of nickel, nickel platinum, cobalt, titanium and tungsten.
Optionally, after forming the patterned electrode layer on the metal silicide layer, the method further includes:
a first protective layer is formed over the electrode layer.
Optionally, after forming the metal layer on the thermosensitive layer, the method further includes:
forming a second protective layer on the metal layer;
the second protective layer comprises silicon nitride.
Optionally, the annealing temperature is 200-400 ℃.
The present disclosure provides an absorber plate structure of an amorphous silicon infrared detector, comprising: the heat sensitive layer, the metal silicide layer, the dielectric layer and the electrode layer; the thermosensitive layer comprises an amorphous silicon material, wherein the amorphous silicon material is one or more elements of boron, phosphorus, hydrogen, germanium, vanadium and oxygen, and has a negative resistance temperature coefficient of more than 1.0%/K; the metal silicide layer is positioned in the electrode connecting area of the thermosensitive layer and is positioned between the thermosensitive layer and the electrode layer; the medium layer is positioned on the resistor area of the thermosensitive layer to protect the amorphous silicon resistor from forming metal silicide; the electrode layer is positioned on one side of the metal silicide layer, which is far away from the thermosensitive layer, and the electrode layer is made of one of titanium nitride, titanium, nickel platinate, nickel, tungsten and cobalt; the noise of the structure formed by the thermosensitive layer, the metal silicide layer and the electrode layer is smaller than that of the structure formed by the electrode layer and the thermosensitive layer. Therefore, the metal silicide is utilized to reduce the noise between the thermosensitive layer and the electrode layer, so that the noise of the infrared detector is reduced, the problem that the detection rate and the sensitivity of the infrared detector are reduced due to overlarge noise caused by direct contact between the thermosensitive layer and the electrode layer is avoided, the detection rate and the sensitivity of the infrared detector are improved, and the infrared detection capability of the infrared detector is improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments of the present disclosure or the solutions in the prior art, the drawings that are required for the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic cross-sectional view of an absorber plate structure of an amorphous silicon infrared detector;
FIG. 2 is a schematic cross-sectional view of an absorber plate structure of another amorphous silicon infrared detector;
FIG. 3 is a schematic cross-sectional view of an absorber plate structure of another amorphous silicon infrared detector;
fig. 4 is a schematic cross-sectional structure of an absorber plate structure of an amorphous silicon infrared detector according to an embodiment of the disclosure;
fig. 5 is a schematic cross-sectional structure of an absorber plate structure of another amorphous silicon infrared detector according to an embodiment of the disclosure;
fig. 6 is a schematic flow chart of a process method of an absorber plate structure of an amorphous silicon infrared detector according to an embodiment of the disclosure;
fig. 7 to fig. 12 are schematic cross-sectional structures corresponding to steps of a process method of an absorber plate structure of an amorphous silicon infrared detector according to an embodiment of the disclosure.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, a further description of aspects of the present disclosure will be provided below. It should be noted that, without conflict, the embodiments of the present disclosure and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the disclosure.
Fig. 1 is a schematic cross-sectional structure of an absorber plate structure of an amorphous silicon infrared detector, as shown in fig. 1, in the related art, when the absorber plate of the amorphous silicon infrared detector is manufactured, a whole silicon oxide film can be formed on a thermosensitive layer 2 as a dielectric layer 31, a resistor position on the thermosensitive layer 2 is reserved by etching patterning, a whole electrode layer 4 is formed on the thermosensitive layer 2 and the dielectric layer 31, etching patterning is performed, and the electrode layer 4 is in direct contact with the thermosensitive layer 2.
Fig. 2 is a schematic cross-sectional structure of an absorber plate structure of another amorphous silicon infrared detector, fig. 3 is a schematic cross-sectional structure of an absorber plate structure of another amorphous silicon infrared detector, and in combination with fig. 2 and 3, when the absorber plate of the amorphous silicon infrared detector is manufactured in the related art, an entire electrode layer 4 may be formed on the thermosensitive layer 2, and then etching patterning is performed, where the electrode layer 4 and the thermosensitive layer 2 are in direct contact. The electrode positions in fig. 2 and 3 are different, fig. 2 may be, for example, a front-mounted electrode, and fig. 3 may be, for example, a flip-chip electrode.
The heat sensitive layer 2 and the electrode layer 4 in the absorption plate structure of the amorphous silicon infrared detector in fig. 1-3 are in direct contact, and the heat sensitive layer 2 is made of amorphous silicon material, so that when the amorphous silicon is used as the heat sensitive layer 2 to be in direct contact with the electrode layer 4, the noise between the heat sensitive layer 2 and the electrode layer 4 is larger, the noise of the infrared detector is larger, the detection rate and the sensitivity of the infrared detector are reduced due to the noise, and the infrared detection capability of the infrared detector is affected.
In order to solve the above problems, embodiments of the present disclosure provide an absorber plate structure of an amorphous silicon infrared detector. Fig. 4 is a schematic cross-sectional structure of an absorber plate structure of an amorphous silicon infrared detector according to an embodiment of the disclosure. As shown in fig. 4, the absorber plate structure of the amorphous silicon infrared detector comprises a thermosensitive layer 2, a dielectric layer 31, a metal silicide layer 32 and an electrode layer 4; the thermosensitive layer 2 comprises an amorphous silicon material, wherein the amorphous silicon material is one or more elements of boron, phosphorus, hydrogen, germanium, vanadium and oxygen, and has a negative resistance temperature coefficient of more than 1.0%/K; the metal silicide layer 32 is located in the electrode connection region of the thermosensitive layer 2 and between the thermosensitive layer 2 and the electrode layer 4; the dielectric layer 31 is positioned on the resistor area of the thermosensitive layer 2 and is used for protecting the amorphous silicon resistor from forming metal silicide; the electrode layer 4 is positioned on one side of the metal silicide layer 32 away from the thermosensitive layer 2, and the material of the electrode layer 4 is one of titanium nitride, titanium, nickel platinate, nickel, tungsten and cobalt; the structure formed by the thermosensitive layer 2, the metal silicide layer 32 and the electrode layer 4 has less noise than the structure formed by the electrode layer 4 in direct contact with the thermosensitive layer 2.
Specifically, the thermosensitive layer 2 of the absorber plate structure is used for converting an infrared temperature detection signal into an infrared detection electric signal, the thermosensitive layer 2 comprises an amorphous silicon material, and the amorphous silicon material can be an amorphous silicon material doped with elements such as boron (B), phosphorus (P), hydrogen (H), germanium (Ge), vanadium (V), oxygen (O) and the like, and the negative resistance temperature coefficient of the amorphous silicon material is more than 1.0%/K. The amorphous silicon material has the advantages of large-area low-temperature film formation, compatibility with the conventional IC technology and the like, is widely applied to the field of semiconductors, cannot be corroded by hydrogen fluoride gas, and is beneficial to release of a sacrificial layer in an infrared detector. The dielectric layer 31 is disposed on the resistor region of the thermosensitive layer 2, and the dielectric layer 31 can protect the resistor on the thermosensitive layer 2 of amorphous silicon from forming metal silicide.
The electrode layer 4 is located on the side of the metal silicide layer 32 facing away from the thermosensitive layer 2, and the electrode layer 4 is used for transmitting the infrared detection electric signal converted by the thermosensitive layer 2 to the substrate through the beam structure in the infrared detector. Illustratively, the material constituting the electrode layer 4 may include, for example, one of titanium nitride (TiN), titanium (Ti), nickel-platinum alloy (NiPt), nickel (Ni), tungsten (W), and cobalt (Co), and titanium nitride, titanium, nickel platinate, nickel, tungsten, and cobalt as the conductive material may effectively improve oxidation resistance of the electrode layer 4, and are common metal conductive materials in CMOS processes.
In the related art, because amorphous silicon is a semiconductor material, when the amorphous silicon is used as the thermosensitive layer 2 to be in direct contact with the electrode layer 4, noise between the thermosensitive layer 2 and the electrode layer 4 is large, so that noise of an infrared detector is large, the detection rate and sensitivity of the infrared detector are reduced due to the noise, and the infrared detection capability of the infrared detector is affected.
In order to solve the above-mentioned problem, the absorber plate structure of the infrared detector according to the embodiment of the present disclosure further includes a metal silicide layer 32, the metal silicide layer 32 is connected to the electrode connection region located on the thermosensitive layer 2, and the metal silicide layer 32 is located between the electrode layer 4 and the thermosensitive layer 2, and the dielectric layer 31 is located on the resistor region of the thermosensitive layer 2, so as to protect the amorphous silicon from forming metal silicide.
The structure formed by the thermosensitive layer 2, the metal silicide layer 32 and the electrode layer 4 has noise smaller than the contact resistance when the electrode layer 4 and the thermosensitive layer 2 are in direct contact. Therefore, the metal silicide layer 32 avoids direct contact between the thermosensitive layer 2 and the electrode layer 4, reduces noise between the thermosensitive layer 2 and the electrode layer 4, and reduces R (resistance) C (control capacitance) delay, so that noise of the infrared detector is reduced, the problem that the detection rate and sensitivity of the infrared detector are reduced due to overlarge noise between the thermosensitive layer 2 and the electrode layer 4, and the infrared detection capability of the infrared detector is improved.
According to the absorption plate structure of the amorphous silicon infrared detector, the metal silicide layer 32 is arranged on the thermosensitive layer 2 of the electrode connection area, the metal silicide 32 is located between the thermosensitive layer 2 and the electrode layer 4, noise of the structure formed by the thermosensitive layer 2, the metal silicide layer 32 and the electrode layer 4 is smaller than that of the structure formed by the electrode layer 4 and the thermosensitive layer 2, direct contact of the thermosensitive layer 2 and the electrode layer 4 is avoided, contact resistance between the thermosensitive layer 2 and the electrode layer 4 is reduced, RC delay is reduced, noise of the infrared detector is reduced, the problem that the noise of the infrared detector is overlarge due to overlarge noise between the thermosensitive layer 2 and the electrode layer 4, and the detection rate and the sensitivity of the infrared detector are reduced is solved, the detection rate and the sensitivity of the infrared detector are improved, and the infrared detection capability of the infrared detector is improved.
Optionally, the metal silicide layer 32 comprises one of nickel silicide, cobalt silicide, titanium silicide, tungsten silicide.
Specifically, the metal silicide layer 32 may include, for example, nickel silicide (NiSi), cobalt silicide (CoSi/CoSi 2), titanium silicide (TiSi 2), and tungsten silicide (WSi 2), and since the resistivity of the metal silicide is low, the metal silicide layer is disposed between the thermosensitive layer 2 and the electrode layer 4, and the noise of the structure constituted by the metal silicide layer 32, the thermosensitive layer 2, and the electrode layer 4 can be made smaller than the noise between the electrode layer 4 and the thermosensitive layer 2. Therefore, the metal silicide layers 32 can be formed by using metal silicides such as nickel silicide, cobalt silicide, titanium silicide, tungsten silicide and the like, and noise between the electrode layer 4 and the thermosensitive layer 2 is reduced, so that noise of the infrared detector is reduced, the detection rate and sensitivity of the infrared detector are improved, and the infrared detection capability of the infrared detector is improved.
Optionally, the dielectric layer 31 includes: one or more of silicon oxide, silicon nitride or silicon oxynitride to ensure that the resistance of the amorphous silicon does not form a metal silicide.
Specifically, as shown in fig. 4, the dielectric layer 31 is located on the resistive region of the thermosensitive layer 2 and between the electrode layer 4 and the thermosensitive layer 2, and the dielectric layer 31 separates the electrode layer 4 and the thermosensitive layer 2, so that the resistive region of the thermosensitive layer 2 can be prevented from being affected by the metal in the electrode layer 4. The silicon oxide, the silicon nitride or the silicon oxynitride is arranged as the dielectric layer 31, the silicon oxide, the silicon nitride or the silicon oxynitride can meet the requirement that the resistance region of the thermosensitive layer 2 cannot be affected by the electrode layer 4, the metal used for forming the metal silicide layer 32 cannot react with the silicon oxide, the silicon nitride or the silicon oxynitride, the resistance region of amorphous silicon can be protected from forming metal silicide, the preparation process of the material is more mature, the price is relatively low, and the manufacturing cost of the infrared detector is reduced.
Fig. 5 is a schematic cross-sectional structure of an absorber plate structure of another amorphous silicon infrared detector according to an embodiment of the disclosure. Optionally, as shown in fig. 5, the absorber plate structure of the amorphous silicon infrared detector further includes: the first protective layer 5, the first protective layer 5 is located on the side of the electrode layer 4 facing away from the dielectric layer 31.
Specifically, the first protection layer 5 is arranged on one side, away from the dielectric layer 31, of the electrode layer 4, so that the electrode layer 4 can be protected from oxidation or corrosion in the preparation process of the absorption plate structure, and the stability of the absorption plate structure is improved. The first protective layer 5 may include, for example, at least one or several of silicon nitride, aluminum oxide, silicon oxynitride. The thermal conductivity of silicon nitride, aluminum oxide, silicon oxide and silicon oxynitride is small, so that the thermal conductivity of the infrared detector can be effectively reduced.
According to the absorption plate structure of the amorphous silicon infrared detector, the metal silicide layer 32 is arranged between the thermosensitive layer 2 and the electrode layer 4 of the electrode connection area, noise of a structure formed by the electrode layer 4, the metal silicide layer 32 and the thermosensitive layer 2 is smaller than that of direct contact between the electrode layer 4 and the thermosensitive layer 2, so that the direct contact between the thermosensitive layer 2 and the electrode layer 4 is avoided by utilizing the metal silicide layer 32, the noise between the thermosensitive layer 2 and the electrode layer 4 is reduced, the noise of the infrared detector is reduced, the problem that the noise of the infrared detector is overlarge due to overlarge noise between the thermosensitive layer 2 and the electrode layer 4, and the detection rate and the sensitivity of the infrared detector are reduced is solved, the detection rate and the sensitivity of the infrared detector are improved, and the infrared detection capability of the infrared detector is improved.
The embodiment of the disclosure also provides a process method of the absorber plate structure of the amorphous silicon infrared detector, and fig. 6 is a flow chart of the process method of the absorber plate structure of the amorphous silicon infrared detector. The process of the absorber plate structure of the amorphous silicon infrared detector can be used to prepare the absorber plate structure of the amorphous silicon infrared detector as described in the above embodiments. As shown in fig. 6, the process method of the absorber plate structure of the amorphous silicon infrared detector includes:
s101, forming a thermosensitive layer; the heat sensitive layer comprises an amorphous silicon material, wherein the amorphous silicon material is one or more elements of boron, phosphorus, hydrogen, germanium, vanadium and oxygen, and has a negative resistance temperature coefficient of more than 1.0%/K.
S102, forming a patterned dielectric layer on the thermosensitive layer, wherein the dielectric layer is positioned on a resistor area of the thermosensitive layer.
Fig. 7 to fig. 12 are schematic cross-sectional structures corresponding to steps of a process method of an absorber plate structure of an amorphous silicon infrared detector according to an embodiment of the disclosure.
Specifically, as shown in fig. 7, a whole dielectric layer 31 may be formed on the thermosensitive layer 2, and then etched to form a corresponding pattern, where the etched pattern on the dielectric layer 31 retains the position of the resistive region on the thermosensitive layer 2.
S103, forming a metal silicide layer on the thermosensitive layer; the metal silicide layer is in contact with the thermosensitive layer of the electrode connection region.
Optionally, forming the metal silicide layer 32 on the thermosensitive layer 2 includes:
forming a metal layer 321 on the thermosensitive layer 2;
annealing the metal layer 321 so that a side of the metal layer 321 facing the thermosensitive layer 2 reacts with the thermosensitive layer 2 to form a metal silicide layer 32;
the metal layer 321 includes one of nickel, nickel platinum, cobalt, titanium, and tungsten.
Specifically, as shown in fig. 8, after forming the patterned dielectric layer 31, a metal layer 321 is formed on the thermosensitive layer 2, and the metal layer 321 covers the thermosensitive layer 2 and the patterned dielectric layer 31 that has been formed, for example, one of nickel, nickel-platinum alloy, cobalt, titanium, or tungsten may be deposited on the thermosensitive layer 2 of amorphous silicon material to form the metal layer 321. The metal layer 321 is annealed, the side of the metal layer 321 facing the thermosensitive layer 2 reacts with amorphous silicon in the thermosensitive layer 2 at the time of annealing, and nickel, cobalt, titanium or platinum nickel alloy in the metal layer 321 does not react with silicon oxide, silicon nitride or silicon oxynitride in the dielectric layer 31. Fig. 9 exemplarily shows that the metal layer 321 contains a metal that does not react with amorphous silicon and a metal that does not react with silicon oxide, silicon nitride, or silicon oxynitride, and is removed by, for example, pickling with aqua regia, to finally form a metal silicide as the metal silicide layer 32 shown in fig. 10.
Optionally, after forming the metal layer 321 on the thermosensitive layer 2, it further includes: a second protective layer is formed on the metal layer 321, the second protective layer comprising silicon nitride.
Specifically, a second protection layer may be formed on the metal layer 321, where the second protection layer may include, for example, a silicon nitride material, and the metal in the metal layer 321 is protected by using the second protection layer, so that oxidation of the metal and external substances is avoided, and stability of the infrared detector is improved. The second protective layer may be removed together when removing the metal in the metal layer 321 that does not react with the thermosensitive layer 2, such as acid washing. The second protective layer is not specifically shown in the drawings.
Alternatively, the annealing temperature may be, for example, 200-400 ℃. Specifically, at an annealing temperature of 200-400 ℃, nickel-platinum alloy, cobalt, titanium or tungsten in the metal layer 321 can react with amorphous silicon to form metal silicide as the metal silicide layer 32, and the annealing temperature does not affect the materials in the thermosensitive layer 2 and the dielectric layer 31, so that the reliability of the annealing process is improved.
And S104, forming a patterned electrode layer on the metal silicide layer.
The noise of the structure formed by the thermosensitive layer, the metal silicide layer and the electrode layer is smaller than that of the structure formed by the electrode layer and the thermosensitive layer.
Specifically, referring to fig. 11, a patterned electrode layer 4 is formed on the patterned dielectric layer 31 and the metal silicide layer 32, and the material constituting the electrode layer 4 may include one or more of titanium nitride, titanium, nickel platinate, nickel, tungsten, and cobalt, and the entire electrode layer 4 may be formed on the patterned dielectric layer 31 first, and then the electrode layer 4 may be etched to form the patterned electrode layer 4.
Optionally, after forming the patterned electrode layer 4 on the metal silicide layer 32, further includes: a first protective layer 5 is formed on the electrode layer 4.
Specifically, with reference to fig. 12, the first protection layer 5 is formed on the patterned electrode layer 4, and the first protection layer 5 is etched, so that the oxidation resistance of the electrode layer 4 can be effectively improved, the heat conductivity coefficient of the electrode material is reduced, and the thermal responsiveness of the infrared detector is further improved.
According to the absorption plate structure of the amorphous silicon infrared detector, the metal silicide layer 32 is arranged between the thermosensitive layer 2 and the electrode layer 4 of the electrode connection area, noise of a structure formed by the electrode layer 4, the metal silicide layer 32 and the thermosensitive layer 2 is smaller than that of direct contact between the electrode layer 4 and the thermosensitive layer 2, so that the direct contact between the thermosensitive layer 2 and the electrode layer 4 is avoided by utilizing the metal silicide layer 32, the noise between the thermosensitive layer 2 and the electrode layer 4 is reduced, the noise of the infrared detector is reduced, the problem that the noise of the infrared detector is overlarge due to overlarge noise between the thermosensitive layer 2 and the electrode layer 4, and the detection rate and the sensitivity of the infrared detector are reduced is solved, the detection rate and the sensitivity of the infrared detector are improved, and the infrared detection capability of the infrared detector is improved.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely a specific embodiment of the disclosure to enable one skilled in the art to understand or practice the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown and described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An absorber plate structure of an amorphous silicon infrared detector, comprising:
the heat sensitive layer, the metal silicide layer, the dielectric layer and the electrode layer;
the thermosensitive layer comprises an amorphous silicon material which is doped with one or more elements of boron, phosphorus, hydrogen, germanium, vanadium and oxygen and has a negative resistance temperature coefficient of more than 1.0%/K;
the metal silicide layer is positioned in an electrode connection region of the thermosensitive layer and is positioned between the thermosensitive layer and the electrode layer;
the dielectric layer is positioned on the resistor area of the thermosensitive layer and used for protecting the amorphous silicon resistor from forming metal silicide;
the electrode layer is positioned on one side of the metal silicide layer, which is away from the thermosensitive layer, and the electrode layer is made of one of titanium nitride, titanium, nickel platinate, nickel, tungsten and cobalt;
the noise of the structure formed by the thermosensitive layer, the metal silicide layer and the electrode layer is smaller than the noise of the direct contact between the electrode layer and the thermosensitive layer.
2. The absorber plate structure of claim 1 wherein said metal silicide layer comprises one of nickel silicide, cobalt silicide, titanium silicide, tungsten silicide.
3. The absorber plate structure of an amorphous silicon infrared detector as recited in claim 1, wherein said dielectric layer comprises: one or more of silicon oxide, silicon nitride or silicon oxynitride to ensure that the resistance of the amorphous silicon does not form a metal silicide.
4. The absorber plate structure of an amorphous silicon infrared detector as set forth in claim 1, further comprising: the first protection layer is positioned on one side of the electrode layer, which is away from the dielectric layer.
5. The absorber plate structure of claim 4 wherein said first protective layer is comprised of at least one or more of silicon nitride, aluminum oxide, silicon oxide, and silicon oxynitride.
6. A process for manufacturing an absorber plate structure of an amorphous silicon infrared detector, adapted to an absorber plate structure of an amorphous silicon infrared detector as claimed in any one of claims 1 to 5, comprising:
forming a thermosensitive layer;
forming a patterned dielectric layer on the thermosensitive layer, wherein the dielectric layer is positioned on a resistor area of the thermosensitive layer;
forming a metal silicide layer on the thermosensitive layer; the metal silicide layer is contacted with the thermosensitive layer of the electrode connecting region;
forming a patterned electrode layer on the metal silicide layer and the dielectric layer; the electrode layer is made of one of titanium nitride, titanium, nickel platinate, nickel, tungsten and cobalt;
the heat-sensitive layer comprises an amorphous silicon material, wherein the amorphous silicon material is one or more elements of boron, phosphorus, hydrogen, germanium, vanadium and oxygen, and has a negative resistance temperature coefficient of more than 1.0%/K; the noise of the structure formed by the thermosensitive layer, the metal silicide layer and the electrode layer is smaller than the noise of the direct contact between the electrode layer and the thermosensitive layer.
7. The method of fabricating an absorber plate structure of an amorphous silicon infrared detector as recited in claim 6, wherein said forming a metal silicide layer on said thermally sensitive layer comprises:
forming a metal layer on the thermosensitive layer;
annealing the metal layer to enable one side of the metal layer facing the thermosensitive layer to react with the thermosensitive layer to form a metal silicide layer;
the metal layer comprises one of nickel, nickel platinum, cobalt, titanium and tungsten.
8. The method of claim 6, further comprising, after forming a patterned electrode layer on the metal silicide layer and the dielectric layer:
a first protective layer is formed over the electrode layer.
9. The process of claim 7, further comprising, after forming a metal layer on the thermosensitive layer:
forming a second protective layer on the metal layer;
the second protective layer comprises silicon nitride.
10. The process of fabricating an absorber plate structure of an amorphous silicon infrared detector as recited in claim 7, wherein,
the annealing temperature is 200-400 ℃.
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