CN113328003A - Infrared detector and preparation method thereof - Google Patents
Infrared detector and preparation method thereof Download PDFInfo
- Publication number
- CN113328003A CN113328003A CN202110138405.1A CN202110138405A CN113328003A CN 113328003 A CN113328003 A CN 113328003A CN 202110138405 A CN202110138405 A CN 202110138405A CN 113328003 A CN113328003 A CN 113328003A
- Authority
- CN
- China
- Prior art keywords
- layer
- infrared detector
- forming
- patterned
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims description 12
- 239000000463 material Substances 0.000 claims abstract description 84
- 238000010521 absorption reaction Methods 0.000 claims abstract description 68
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 24
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000003610 charcoal Substances 0.000 claims abstract description 24
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910001080 W alloy Inorganic materials 0.000 claims abstract description 18
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 334
- 238000000034 method Methods 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 17
- 239000010937 tungsten Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 7
- 239000006096 absorbing agent Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 claims description 7
- 229910001120 nichrome Inorganic materials 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 4
- 230000004044 response Effects 0.000 abstract description 18
- 238000001514 detection method Methods 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The infrared detector comprises a substrate, a heat-sensitive layer, a dielectric layer, an electrode layer and a passivation layer, wherein the heat-sensitive layer, the dielectric layer, the electrode layer and the passivation layer are positioned on the substrate; the infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structures are connected to the corresponding micro-bridge columns through the corresponding beam structures; the heat-sensitive layer covers the area where the absorption plate structure and the beam structure are located; wherein, the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium; the passivation layer covers the area where the absorption plate structure is located; wherein, the material for forming the electrode layer at least comprises titanium-tungsten alloy. Through the technical scheme disclosed by the invention, the infrared response rate of the infrared detector is improved.
Description
Technical Field
The disclosure relates to the technical field of infrared detection, in particular to an infrared detector and a preparation method thereof.
Background
The non-contact infrared detector comprises a non-contact temperature measuring sensor, for example, and the detection principle is that the infrared detector converts an infrared radiation signal emitted by a target object to be detected into a thermal signal, the thermal signal is converted into an electric signal through a detector sensitive element, the electric signal is processed and output through a circuit chip, and the infrared detector realizes an infrared detection function.
Infrared detector includes absorbing plate structure and beam structure, absorbing plate structure and beam structure's performance direct influence infrared detector's thermal response performance and detection performance, the absorbing plate structure that generally corresponds infrared detector all needs the preparation solitary support rete to support the absorbing plate structure behind infrared detector release sacrificial layer, but the setting that supports the rete can lead to the thickness increase of infrared detector absorbing plate structure, and then the thermal response time that leads to infrared detector increases, influences infrared detector's infrared detection performance.
Disclosure of Invention
In order to solve the technical problems or at least partially solve the technical problems, the present disclosure provides an infrared detector and a method for manufacturing the same, which reduces a thermal response time of the infrared detector and improves an infrared response rate of the infrared detector.
In a first aspect, the present disclosure provides an infrared detector comprising:
the heat-sensitive electrode comprises a substrate, and a heat-sensitive layer, a dielectric layer, an electrode layer and a passivation layer which are positioned on the substrate, wherein the dielectric layer is positioned between the heat-sensitive layer and the electrode layer, the heat-sensitive layer is positioned on one side of the dielectric layer close to the substrate, and the passivation layer is positioned on one side of the electrode layer far away from the substrate;
the infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structures are connected to the corresponding micro-bridge columns through the corresponding beam structures;
the heat-sensitive layer covers the areas where the absorption plate structure and the beam structure are located; wherein, the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium;
the passivation layer covers the area where the absorption plate structure is located; wherein the material of the electrode layer at least comprises titanium-tungsten alloy.
Optionally, the material forming the electrode layer further includes one or more of nichrome, nickel-platinum alloy, nickel-silicon alloy, nickel, platinum, tungsten, aluminum, copper, or gold;
the material for forming the dielectric layer comprises one or more of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbonitride, aluminum oxide or amorphous carbon;
the material for forming the passivation layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium, amorphous silicon germanium or aluminum oxide.
Optionally, the material comprising the sacrificial layer between the substrate and the heat sensitive layer comprises silicon oxide.
Optionally, the infrared detector further comprises:
the reflecting layer is arranged on the substrate in a contact mode, and the material forming the reflecting layer comprises one or more of aluminum, copper, titanium or tungsten.
Optionally, the infrared detector further comprises:
and the protective layer is positioned on the reflecting layer, corresponds to the position of the micro-bridge column, and the electrode layer is electrically connected with the reflecting layer through a through hole penetrating through the dielectric layer, the thermosensitive layer and the protective layer.
Optionally, the material constituting the protective layer includes one or more of silicon nitride, silicon carbide, aluminum oxide, silicon, or amorphous carbon.
In a second aspect, the present disclosure provides a method for manufacturing an infrared detector, where the infrared detector includes a plurality of infrared detector pixels arranged in a matrix, where the infrared detector pixels include an absorber plate structure, at least two micro-bridge columns, and at least two beam structures, and the absorber plate structure is connected to the corresponding micro-bridge columns through the corresponding beam structures;
the preparation method of the infrared detector comprises the following steps:
forming a sacrificial layer on a substrate;
forming a heat-sensitive layer on the sacrificial layer; wherein, the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium;
forming a patterned dielectric layer on the thermosensitive layer;
forming a patterned electrode layer on the patterned dielectric layer; the electrode layer forms a patterned structure corresponding to the absorption plate structure, and the material for forming the electrode layer at least comprises titanium-tungsten alloy;
forming a passivation layer on the whole patterned electrode layer, and etching the passivation layer; wherein the passivation layer forms a patterned structure corresponding to the absorption plate structure;
etching the electrode layer and the heat-sensitive layer to form the absorber plate structure and the beam structure; wherein the heat-sensitive layer forms a patterned structure corresponding to the absorption plate structure and the beam structure, and the electrode layer forms a patterned structure corresponding to the absorption plate structure and the beam structure;
and releasing the sacrificial layer.
Optionally, the forming a patterned electrode layer on the patterned dielectric layer includes:
forming a whole electrode layer on the patterned dielectric layer;
and etching the electrode layer corresponding to the position of the absorption plate structure to form the patterned electrode layer.
Optionally, before forming the sacrificial layer on the substrate, the method further includes:
forming a patterned reflective layer on the substrate; wherein, the material for forming the reflecting layer comprises one or more of aluminum, copper, titanium or tungsten;
forming a patterned protective layer on the patterned reflective layer; wherein, the material for forming the protective layer comprises one or more of silicon nitride, silicon carbide, aluminum oxide, silicon or amorphous carbon;
forming a patterned sacrificial layer on the patterned protective layer; and the electrode layer is electrically connected with the reflecting layer through a through hole penetrating through the dielectric layer, the thermosensitive layer and the protective layer corresponding to the position of the micro-bridge column.
Optionally, the material constituting the sacrificial layer comprises silicon oxide;
the releasing the sacrificial layer includes:
releasing the sacrificial layer using hydrogen fluoride gas.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
the infrared detector comprises a substrate, and a heat-sensitive layer, a dielectric layer, an electrode layer and a passivation layer which are arranged on the substrate, wherein the dielectric layer is arranged between the heat-sensitive layer and the electrode layer, the heat-sensitive layer is arranged on one side of the dielectric layer close to the substrate, and the passivation layer is arranged on one side of the electrode layer far away from the substrate. The infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structures are connected to the corresponding micro-bridge columns through the corresponding beam structures. The heat-sensitive layer covers the areas where the absorption plate structure and the beam structure are located, and the passivation layer covers the areas where the absorption plate structure is located; wherein, the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium. From this, utilize the heat-sensitive layer to act as the bearing structure of absorbing plate structure, need not to correspond the independent support rete of absorbing plate structure preparation, be favorable to reducing the thickness of absorbing plate structure, and then reduce the heat capacity of absorbing plate structure, reduce infrared detector's thermal response time. In addition, the thermosensitive layer made of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium and other materials also covers the area where the beam structure is located, so that the thermal conductivity of the beam structure is favorably reduced, and the infrared response rate of the infrared detector is further improved. In addition, the materials for forming the electrode layer at least comprise titanium-tungsten alloy, so that the oxidation resistance of the electrode layer is effectively improved, the heat conductivity coefficient of the electrode material is reduced, an additional passivation layer is not required to be arranged on the beam structure, the heat conductivity of the beam structure is favorably reduced, and the thermal responsivity of the infrared detector is further improved. In addition, the absorption plate structure and the beam structure can comprise heat-sensitive layers made of the same material, so that the manufacturing process of the infrared detector is simplified, and the manufacturing yield of the infrared detector is improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic perspective view of an infrared detector according to an embodiment of the present disclosure;
fig. 2 is a schematic perspective structure diagram of an infrared detector pixel provided in an embodiment of the present disclosure;
fig. 3 is a schematic cross-sectional structure diagram of an infrared detector pixel provided in an embodiment of the present disclosure;
fig. 4 is a schematic top view of an electrode layer corresponding to an absorption plate structure according to an embodiment of the disclosure;
fig. 5 is a schematic flow chart illustrating a method for manufacturing an infrared detector according to an embodiment of the present disclosure;
fig. 6-13 are schematic cross-sectional structure diagrams corresponding to steps of a method for manufacturing an infrared detector, respectively.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
Fig. 1 is a schematic perspective structure diagram of an infrared detector provided in an embodiment of the present disclosure, fig. 2 is a schematic perspective structure diagram of an infrared detector pixel provided in an embodiment of the present disclosure, and fig. 3 is a schematic sectional structure diagram of an infrared detector pixel provided in an embodiment of the present disclosure. With reference to fig. 1 to 3, the infrared detector includes a substrate 1, and a thermal sensitive layer 2, a dielectric layer 3, an electrode layer 4 and a passivation layer 5 on the substrate 1, where the dielectric layer 3 is located between the thermal sensitive layer 2 and the electrode layer 4, the thermal sensitive layer 2 is located on a side of the dielectric layer 3 close to the substrate 1, and the passivation layer 5 is located on a side of the electrode layer 4 away from the substrate 1. The infrared detector comprises a plurality of infrared detector pixels 100 which are arranged in a matrix, each infrared detector pixel 100 comprises an absorption plate structure 6, at least two micro-bridge columns 7 and at least two beam structures 8, and the absorption plate structures 6 are connected to the corresponding micro-bridge columns 7 through the corresponding beam structures 8.
For example, fig. 2 illustrates that the infrared detector pixel 100 includes four micro-bridge pillars 7 and two beam structures 8, and the specific number of the micro-bridge pillars 7 and the beam structures 8 included in the infrared detector pixel 100 is not limited in the embodiment of the present disclosure, for example, the number of the micro-bridge pillars 7 in the infrared detector pixel 100 may also be two, and the number of the beam structures 8 may also be four.
Specifically, be provided with the readout circuit in the substrate 1, the readout circuit is used for realizing the collection of infrared detection signal of telecommunication and the processing of data, micro-bridge post 7 structure for example can be hollow column structure, micro-bridge post 7 structure is located substrate 1 for supporting infrared detector's beam structure 8 and absorption plate structure 6 after sacrificial layer 9 on substrate 1 releases, absorption plate structure 6 is connected to corresponding micro-bridge post 7 through corresponding beam structure 8, and micro-bridge post 7 structure and the 8 overlap joints of beam structure and then realize the support to absorption plate structure 6 promptly.
Specifically, the thermosensitive layer 2 is used for converting an infrared temperature detection signal into an infrared detection electrical signal, the electrode layer 4 is used for transmitting the infrared detection electrical signal converted by the thermosensitive layer 2 to the substrate 11 through the beam structures 8 on the left and right sides, and fig. 4 is a schematic view of a top view structure of the electrode layer corresponding to the absorption plate structure provided by the embodiment of the present disclosure. Referring to fig. 1 to 4, two electrodes 41 and 42 are disposed at positions of the electrode layer 4 corresponding to the absorption plate structure 6, the two electrodes 41 and 42 are respectively connected to the beam structures 8 at the left and right sides, the two electrodes 41 and 42 respectively transmit positive and negative signals of the infrared detection electrical signal, that is, the two beam structures 8 respectively transmit positive and negative signals of the infrared detection electrical signal, a readout circuit in the substrate 1 implements non-contact infrared temperature detection by analyzing the acquired infrared detection electrical signal, and the passivation layer 5 is used to protect the dielectric layer 3 from oxidation or corrosion.
Illustratively, the material forming the dielectric layer 3 may be one or more of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbonitride, aluminum oxide, or amorphous carbon, and the material forming the passivation layer 5 may be one or more of amorphous silicon, amorphous carbon, amorphous germanium, amorphous silicon germanium, or aluminum oxide. Illustratively, if the material of the dielectric layer 3 is one or more of silicon carbide, aluminum oxide or amorphous carbon, the passivation layer 5 may not be prepared, and after the electrode layer 4 is patterned, the electrode layer 4 and the material of the thermosensitive layer 2 are etched together to form a beam structure and an absorption plate structure.
With reference to fig. 1 to 4, the thermal sensitive layer 2 is disposed to cover the area where the absorber plate structure 6 and the beam structure 8 are located, and the material constituting the thermal sensitive layer 2 includes one or more of amorphous silicon, amorphous carbon, amorphous germanium, or amorphous silicon germanium.
The performance of infrared detector's absorption plate structure and beam structure directly influences infrared detector's thermal response performance, and general infrared detector's absorption plate structure all need make solitary support rete to support whole infrared detector behind infrared detector release sacrificial layer, but the setting that supports the rete can lead to the thickness increase of infrared detector absorption plate structure, leads to infrared detector's thermal response time to increase, influences infrared detector's infrared detection performance.
The embodiment of the present disclosure utilizes the heat sensitive layer 2 as the support structure of the absorption plate structure 6, and does not need to correspond to the absorption plate structure 6 to make an independent support film layer, which is beneficial to reducing the film layer number constituting the absorption plate structure 6, and reducing the thickness of the absorption plate structure 6, thereby reducing the heat capacity of the absorption plate structure 6, reducing the thermal response time of the infrared detector, and improving the thermal response rate of the infrared detector. In addition, the material forming the thermosensitive layer 2 includes one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium, that is, the thermosensitive layer 2 formed by the amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium and other materials is arranged to cover the area where the beam structure 8 is located, so that the amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium and other materials are used as the thermosensitive material, the amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium and other materials in the beam structure 8 can effectively reduce the thermal conductivity of the beam structure 8, and the thermal response rate of the infrared detector is improved. In addition, the absorption plate structure 6 and the beam structure 8 comprise the thermosensitive layer 2 made of the same material, so that the manufacturing process of the infrared detector is simplified, and the manufacturing yield of the infrared detector is improved.
The embodiment of the disclosure further sets the passivation layer 5 to cover the area where the absorption plate structure 6 is located, the material forming the electrode layer 4 at least comprises titanium-tungsten alloy, the titanium-tungsten alloy is used as an electrode material, the heat conductivity coefficient is small, the oxidation resistance is good, the oxidation resistance of the electrode layer 4 is effectively improved by using the titanium-tungsten alloy to manufacture the electrode layer 4, the heat conductivity of the electrode material is reduced, and the titanium-tungsten alloy has a good selection ratio with silicon oxide, so that the beam structure 8 is not required to be provided with an additional passivation layer, the heat conduction material on the beam structure 8 can be effectively reduced, the heat conduction of the beam structure 8 is favorably reduced, and the heat responsivity of the infrared detector is further mentioned.
Optionally, with reference to fig. 1 to 4, the material constituting the electrode layer 4 may further include one or more of nichrome, nickel-platinum alloy, nickel-silicon alloy, nickel, platinum, tungsten, aluminum, copper, or gold. Specifically, the materials of nichrome, nickel platinum alloy, nickel silicon alloy, nickel, platinum, tungsten, aluminum, copper or gold and the like also have the characteristics of small heat conductivity coefficient, good oxidation resistance and good etching selectivity with silicon oxide, the materials for forming the electrode layer 4 also comprise one or more of nichrome, nickel platinum alloy, nickel silicon alloy, nickel, platinum, tungsten, aluminum, copper or gold, the oxidation resistance of the electrode layer 4 can be effectively improved, the heat conductivity of the electrode material is reduced, an additional passivation layer is not required to be arranged on the beam structure 8, the heat conduction materials on the beam structure 8 can be effectively reduced, the heat conduction of the beam structure 8 is favorably reduced, and the thermal responsiveness of the infrared detector is further improved.
At present, infrared detectors are detector chip structures formed by CMOS circuits and MEMS structures, the process compatibility is not high, the productivity is low, the yield is low, the cost is high, the CMOS process is utilized to complete the circuits and the sensor structures together, and therefore the integrated infrared detector chip is the future development direction. Alternatively, in conjunction with fig. 1 to 4, it may be provided that the material constituting the sacrificial layer 9 between the substrate 1 and the thermosensitive layer 2 comprises silicon oxide. Specifically, the silicon oxide is used as the material of the sacrificial layer 9 between the substrate 1 and the thermosensitive layer 2, which is beneficial to realizing the CMOS process flow sheet of the readout circuit in the substrate 1 and the whole infrared detector, i.e. the infrared detector can be prepared by adopting the CMOS process, and an integrated infrared detector can be formed by utilizing the CMOS process, so that the preparation yield of the infrared detector is effectively improved, and the preparation cost of the infrared detector is reduced. In addition, the material forming the thermosensitive layer 2 comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium, the material forming the electrode layer at least comprises titanium tungsten alloy, and silicon oxide has a good selective etching ratio with the materials of amorphous silicon, amorphous carbon, amorphous germanium, amorphous silicon germanium, titanium tungsten alloy and the like, so that the release of the sacrificial layer 9 formed by silicon oxide is facilitated to form a released hollow structure, the influence of the release process of the sacrificial layer 9 on other film layers in the infrared detector is avoided, and the infrared detection performance of the infrared detector is optimized.
It should be noted that fig. 3 exemplarily shows the sacrificial layer 9 in the infrared detector for explaining a specific structure of the infrared detector, and in the finally formed infrared detector product, the sacrificial layer 9 is released, that is, the sacrificial layer 9 is not present.
Optionally, in conjunction with fig. 1 to 4, the infrared detector may further include a reflective layer 10 on the substrate 1, the reflective layer 10 being disposed in contact with the substrate 1. Specifically, the infrared detector further comprises a reflecting layer 10 located on the substrate 1, the reflecting layer 10 can reflect infrared rays irradiated to the reflecting layer 10 to the absorption plate structure 6 in the infrared detector pixel 100, and secondary absorption of the infrared rays is realized by matching with a resonant cavity formed by the infrared detector pixel 100, so that the infrared absorption rate of the infrared detector pixel 100 is improved.
Illustratively, the material constituting the reflective layer 10 may be configured to include one or more of aluminum, copper, titanium, or tungsten, and the reflective layer 10 made of the aluminum, copper, titanium, or tungsten material may be configured to implement the absorption plate structure 6 that reflects infrared rays irradiated to the reflective layer 10 into the infrared detector pixel 100 to improve the infrared absorption rate of the infrared detector pixel 100. In addition, the silicon oxide has a good selective etching ratio with aluminum, copper, titanium or tungsten, and the materials forming the reflecting layer 10 include one or more of aluminum, copper, titanium or tungsten, so that the release of the sacrificial layer 9 formed by the silicon oxide is facilitated to form a released hollow structure, the influence of the release process of the sacrificial layer 9 on other film layers in the infrared detector is avoided, and the infrared detection performance of the infrared detector is optimized.
Optionally, with reference to fig. 1 to 4, the infrared detector may further include a protective layer 11 on the reflective layer 10, where the electrode layer 4 is electrically connected to the reflective layer 10 through a through hole penetrating through the dielectric layer 3, the thermosensitive layer 2 and the protective layer 11, corresponding to the location of the micro-bridge pillar 7. Specifically, a porous structure is formed on the micro-bridge column 7 corresponding to the position of the micro-bridge column 7 by the medium layer 3, namely, on the bottom of the hollow column structure, a porous structure is formed on the bottom of the micro-bridge column 7 by the thermosensitive layer 2, a porous structure is formed on the position of the protective layer 11 corresponding to the micro-bridge column 7, so that the electrode layer 4 is electrically connected to the reflective layer 10 through a through-hole penetrating the dielectric layer 3, the thermosensitive layer 2 and the protective layer 11, further realizing that the infrared detection electric signal converted by the thermosensitive layer 2 is transmitted to the electrode layer 4, then is transmitted to the reflecting layer 10 through the beam structures 8 at the left and right sides and the micro-bridge column 7 structure, the part of the reflecting layer 10 electrically connected with the electrode layer 4 is used as a connecting disc-shaped structure, the infrared detection electrical signal is further transmitted to a reading circuit in the substrate 1, and the reading circuit performs analysis of the infrared detection electrical signal and processing of related data, so as to realize the infrared detection function of the infrared detector. In addition, the protective layer 11 can protect the reflective layer 10 serving as the connecting disk structure from oxidation and corrosion after the sacrificial layer 9 is released.
Illustratively, the material that may be provided to form the protective layer 11 includes one or more of silicon nitride, silicon carbide, aluminum oxide, silicon, or amorphous carbon. Specifically, the protective layer 11 made of a material such as silicon nitride, silicon carbide, aluminum oxide, silicon, or amorphous carbon can effectively protect the reflective layer 10 serving as the connecting disk structure after the sacrificial layer 9 is released. In addition, the silicon oxide has a good selective etching ratio with materials such as silicon nitride, silicon carbide, aluminum oxide, silicon or amorphous carbon, and the like, and the materials forming the protective layer 11 include one or more of silicon nitride, silicon carbide, aluminum oxide, silicon or amorphous carbon, so that the release of the sacrificial layer 9 formed by the silicon oxide is facilitated to form a released hollow structure, the influence of the release process of the sacrificial layer 9 on other film layers in the infrared detector is avoided, and the infrared detection performance of the infrared detector is optimized.
The embodiment of the present disclosure uses the heat sensitive layer 2 as the support structure of the absorption plate structure 6, and does not need to make an independent support film layer corresponding to the absorption plate structure 6, which is beneficial to reducing the thickness of the absorption plate structure 6, and further reduces the heat capacity of the absorption plate structure 6, and reduces the thermal response time of the infrared detector. In addition, the thermosensitive layer 2 made of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium and other materials also covers the area where the beam structure 8 is located, so that the thermal conductivity of the beam structure 8 is favorably reduced, and the infrared response rate of the infrared detector is further improved. In addition, the materials for forming the electrode layer at least comprise titanium-tungsten alloy, so that the oxidation resistance of the electrode layer is effectively improved, the heat conductivity coefficient of the electrode material is reduced, an additional passivation layer is not required to be arranged on the beam structure, the heat conductivity of the beam structure is favorably reduced, and the thermal responsivity of the infrared detector is further improved. In addition, the absorption plate structure 6 and the beam structure 8 comprise the thermosensitive layer 2 made of the same material, so that the manufacturing process of the infrared detector is simplified, and the manufacturing yield of the infrared detector is improved.
The embodiment of the disclosure also provides a preparation method of the infrared detector, and fig. 5 is a schematic flow chart of the preparation method of the infrared detector provided by the embodiment of the disclosure. The method of manufacturing the infrared detector may be used to manufacture the infrared detector as in the above embodiments. As shown in fig. 5, the method for manufacturing the infrared detector includes:
and S110, forming a sacrificial layer on the substrate.
Specifically, before forming the sacrificial layer on the substrate 1, as shown in fig. 6, a patterned reflective layer 10 is formed on the substrate 1, the material forming the reflective layer 10 may include one or more of aluminum, copper, titanium, or tungsten, and the entire reflective layer 10 may be formed first and then etched to form a corresponding pattern. As shown in fig. 7, a patterned protection layer 11 is formed on the patterned reflective layer 10, the material constituting the protection layer 11 may include one or more of silicon nitride, silicon carbide, aluminum oxide, silicon, or amorphous carbon, and the entire protection layer 11 may be formed first, and then etched to form a corresponding pattern, so that the protection layer 11 forms a via hole 110 corresponding to the position of the micro-bridge pillar, so as to expose the reflective layer 10 serving as a connecting disk structure. As shown in fig. 8, a patterned sacrificial layer 9 is formed on the patterned protection layer 11, and the entire sacrificial layer 9 may be formed first, and then etched to form a corresponding pattern, so that a via hole 90 is formed at a position of the sacrificial layer 9 corresponding to the micro-bridge pillar, so as to expose the reflective layer 10 serving as the connecting disk structure.
S120, forming a thermosensitive layer on the sacrificial layer; wherein, the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium.
Specifically, as shown in fig. 9, the entire thermosensitive layer 2 is formed on the sacrificial layer 9.
And S130, forming a patterned dielectric layer on the thermosensitive layer.
Specifically, as shown in fig. 10, a patterned dielectric layer 3 is formed on the thermosensitive layer 2, and the entire dielectric layer 3 may be formed first and then etched to form a corresponding pattern.
S140, forming a patterned electrode layer on the patterned dielectric layer; the electrode layer forms a patterned structure corresponding to the absorption plate structure, and the material forming the electrode layer at least comprises titanium-tungsten alloy.
Specifically, with reference to fig. 3 and fig. 11, a patterned electrode layer 4 is formed on the patterned dielectric layer 3, the material constituting the electrode layer 4 at least includes titanium-tungsten alloy, and may further include one or more of nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, platinum, tungsten, aluminum, copper, or gold, the entire electrode layer 4 may be formed on the patterned dielectric layer 3, and the electrode layer 4 is etched corresponding to the position of the absorber plate structure 6 to form the patterned electrode layer 4. In addition, the electrode layer 4 is electrically connected with the reflecting layer 10 through a through hole penetrating through the dielectric layer 3, the thermosensitive layer 2 and the protective layer 11 corresponding to the position of the micro-bridge pillar 7.
S150, forming a passivation layer on the whole surface of the patterned electrode layer, and etching the passivation layer; wherein, the passivation layer forms a patterned structure corresponding to the absorbing plate structure.
Specifically, with reference to fig. 3 and 12, the entire passivation layer 5 is formed on the patterned electrode layer 4, the passivation layer 5 is etched, and the etched passivation layer 5 forms a patterned structure corresponding to the absorber plate structure 6. From this, the material that sets up to constitute electrode layer 4 includes titanium tungsten alloy at least, and passivation layer 5 corresponds absorption plate structure 6 and forms the patterning structure, has effectively improved electrode layer 4's oxidation resistance, has reduced electrode material's coefficient of heat conductivity for need not to set up extra passivation layer on the beam structure 8, be favorable to reducing beam structure 8's thermal conductance, further mention infrared detector's thermal responsiveness.
S160, etching the electrode layer and the thermosensitive layer to form an absorption plate structure and a beam structure; the heat-sensitive layer forms a patterned structure corresponding to the absorption plate structure and the beam structure, and the electrode layer forms a patterned structure corresponding to the absorption plate structure and the beam structure.
Specifically, referring to fig. 3 and 12, the electrode layer 4 and the thermosensitive layer 2 are etched to form the absorption plate structure 6 and the beam structure 8, the etched thermosensitive layer 2 forms a patterned structure corresponding to the absorption plate structure 6 and the beam structure 8, and the etched electrode layer 4 forms a patterned structure corresponding to the absorption plate structure 6 and the beam structure 8.
From this, realized that heat sensitive layer 2 covers absorbing plate structure 6 and beam structure 8 region, utilized heat sensitive layer 2 of material processes such as amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium to act as absorbing plate structure 6's bearing structure, need not to correspond absorbing plate structure 6 and make solitary support rete, be favorable to reducing absorbing plate structure 6's thickness, and then reduced absorbing plate structure 6's heat capacity, reduced infrared detector's thermal response time. In addition, the thermosensitive layer 2 made of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium and other materials also covers the area where the beam structure 8 is located, so that the thermal conductivity of the beam structure 8 is favorably reduced, and the response rate of the infrared detector is improved. In addition, only the thermosensitive layer 2 and the electrode layer 4 are arranged on the beam structure 8, and an additional passivation layer is not needed, so that the heat conduction of the beam structure 8 is reduced, and the heat responsivity of the infrared detector is further improved. The absorption plate structure 6 and the beam structure 8 comprise the thermosensitive layer 2 made of the same material, so that the manufacturing process of the infrared detector is simplified, and the manufacturing yield of the infrared detector is improved.
And S170, releasing the sacrificial layer.
Specifically, as shown in fig. 13, the material constituting the sacrifice layer 9 includes silicon oxide, and the sacrifice layer 9 can be released by hydrogen fluoride gas. The material forming the heat sensitive layer 2 comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium, the material forming the reflecting layer 10 comprises one or more of aluminum, copper, titanium or tungsten, the material forming the protective layer 11 comprises one or more of silicon nitride, silicon carbide, aluminum oxide, silicon or amorphous carbon, the material forming the electrode layer 4 comprises one or more of titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, platinum, tungsten, aluminum, copper or gold, the material forming the passivation layer 5 comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium, amorphous silicon germanium or aluminum oxide, the materials have good selective etching ratio with silicon oxide, the material forming the sacrificial layer 9 comprises silicon oxide, which is beneficial for hydrogen fluoride gas to release the sacrificial layer 9 to form a hollow structure shown in fig. 13, and other film layers in the infrared detector are prevented from being influenced by the release process of the sacrificial layer 9, and optimizing the infrared detection performance of the infrared detector.
The embodiment of the disclosure utilizes the heat-sensitive layer as the supporting structure of the absorbing plate structure, does not need to correspond to the absorbing plate structure to manufacture an independent supporting film layer, is favorable for reducing the thickness of the absorbing plate structure, further reduces the heat capacity of the absorbing plate structure, and reduces the thermal response time of the infrared detector. In addition, the thermosensitive layer made of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium and other materials also covers the area where the beam structure is located, so that the thermal conductivity of the beam structure is favorably reduced, and the infrared response rate of the infrared detector is further improved. In addition, the materials for forming the electrode layer at least comprise titanium-tungsten alloy, so that the oxidation resistance of the electrode layer is effectively improved, the heat conductivity coefficient of the electrode material is reduced, an additional passivation layer is not required to be arranged on the beam structure, the heat conductivity of the beam structure is favorably reduced, and the thermal responsivity of the infrared detector is further improved. In addition, the absorption plate structure 6 and the beam structure 8 comprise the thermosensitive layer 2 made of the same material, so that the manufacturing process of the infrared detector is simplified, and the manufacturing yield of the infrared detector is improved.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An infrared detector, comprising:
the heat-sensitive electrode comprises a substrate, and a heat-sensitive layer, a dielectric layer, an electrode layer and a passivation layer which are positioned on the substrate, wherein the dielectric layer is positioned between the heat-sensitive layer and the electrode layer, the heat-sensitive layer is positioned on one side of the dielectric layer close to the substrate, and the passivation layer is positioned on one side of the electrode layer far away from the substrate;
the infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structures are connected to the corresponding micro-bridge columns through the corresponding beam structures;
the heat-sensitive layer covers the areas where the absorption plate structure and the beam structure are located; wherein, the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium;
the passivation layer covers the area where the absorption plate structure is located; wherein the material of the electrode layer at least comprises titanium-tungsten alloy.
2. The infrared detector of claim 1, wherein the electrode layer is made of a material further comprising one or more of nichrome, nickel platinum alloy, nickel silicon alloy, nickel, platinum, tungsten, aluminum, copper, or gold;
the material for forming the dielectric layer comprises one or more of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbonitride, aluminum oxide or amorphous carbon;
the material for forming the passivation layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium, amorphous silicon germanium or aluminum oxide.
3. The infrared detector as set forth in claim 1, wherein the material comprising the sacrificial layer between the substrate and the thermally sensitive layer comprises silicon oxide.
4. The infrared detector of claim 1, further comprising:
the reflecting layer is arranged on the substrate in a contact mode, and the material forming the reflecting layer comprises one or more of aluminum, copper, titanium or tungsten.
5. The infrared detector of claim 4, further comprising:
and the protective layer is positioned on the reflecting layer, corresponds to the position of the micro-bridge column, and the electrode layer is electrically connected with the reflecting layer through a through hole penetrating through the dielectric layer, the thermosensitive layer and the protective layer.
6. The infrared detector as set forth in claim 5, wherein said protective layer is made of a material comprising one or more of silicon nitride, silicon carbide, aluminum oxide, silicon, or amorphous carbon.
7. The preparation method of the infrared detector is characterized in that the infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structure is connected to the corresponding micro-bridge columns through the corresponding beam structures;
the preparation method of the infrared detector comprises the following steps:
forming a sacrificial layer on a substrate;
forming a heat-sensitive layer on the sacrificial layer; wherein, the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium;
forming a patterned dielectric layer on the thermosensitive layer;
forming a patterned electrode layer on the patterned dielectric layer; the electrode layer forms a patterned structure corresponding to the absorption plate structure, and the material for forming the electrode layer at least comprises titanium-tungsten alloy;
forming a passivation layer on the whole patterned electrode layer, and etching the passivation layer; wherein the passivation layer forms a patterned structure corresponding to the absorption plate structure;
etching the electrode layer and the heat-sensitive layer to form the absorber plate structure and the beam structure; wherein the heat-sensitive layer forms a patterned structure corresponding to the absorption plate structure and the beam structure, and the electrode layer forms a patterned structure corresponding to the absorption plate structure and the beam structure;
and releasing the sacrificial layer.
8. The method of claim 7, wherein the forming a patterned electrode layer on the patterned dielectric layer comprises:
forming a whole electrode layer on the patterned dielectric layer;
and etching the electrode layer corresponding to the position of the absorption plate structure to form the patterned electrode layer.
9. The method of claim 7, further comprising, before forming the sacrificial layer on the substrate:
forming a patterned reflective layer on the substrate; wherein, the material for forming the reflecting layer comprises one or more of aluminum, copper, titanium or tungsten;
forming a patterned protective layer on the patterned reflective layer; wherein, the material for forming the protective layer comprises one or more of silicon nitride, silicon carbide, aluminum oxide, silicon or amorphous carbon;
forming a patterned sacrificial layer on the patterned protective layer; and the electrode layer is electrically connected with the reflecting layer through a through hole penetrating through the dielectric layer, the thermosensitive layer and the protective layer corresponding to the position of the micro-bridge column.
10. The method of claim 7, wherein a material constituting the sacrificial layer includes silicon oxide;
the releasing the sacrificial layer includes:
releasing the sacrificial layer using hydrogen fluoride gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110138405.1A CN113328003B (en) | 2021-02-01 | 2021-02-01 | Infrared detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110138405.1A CN113328003B (en) | 2021-02-01 | 2021-02-01 | Infrared detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113328003A true CN113328003A (en) | 2021-08-31 |
| CN113328003B CN113328003B (en) | 2021-12-28 |
Family
ID=77413499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110138405.1A Active CN113328003B (en) | 2021-02-01 | 2021-02-01 | Infrared detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113328003B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594193A (en) * | 2021-09-30 | 2021-11-02 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
| CN113639879A (en) * | 2021-10-13 | 2021-11-12 | 北京北方高业科技有限公司 | Preparation method of infrared microbridge detector with multilayer structure and infrared microbridge detector |
| CN113791048A (en) * | 2021-09-13 | 2021-12-14 | 上海翼捷工业安全设备股份有限公司 | MEMS infrared light source and preparation method thereof |
| CN117174777A (en) * | 2023-10-26 | 2023-12-05 | 北京北方高业科技有限公司 | Absorption plate structure of amorphous silicon infrared detector and process method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
| US20140175588A1 (en) * | 2012-12-21 | 2014-06-26 | Robert Bosch Gmbh | Suspension and absorber structure for bolometer |
| CN106124066A (en) * | 2016-06-13 | 2016-11-16 | 烟台睿创微纳技术股份有限公司 | The microbolometer of a kind of high fill factor and preparation method |
| CN110120437A (en) * | 2019-04-30 | 2019-08-13 | 上海集成电路研发中心有限公司 | A kind of infrared detector structure of high fill factor and preparation method thereof |
| CN110160656A (en) * | 2017-09-30 | 2019-08-23 | 烟台睿创微纳技术股份有限公司 | A kind of non refrigerating infrared imaging sensor based on super surface |
| CN110332998A (en) * | 2019-06-17 | 2019-10-15 | 华中科技大学 | Metamaterial non-refrigerating infrared focal plane polychrome polarization detector and preparation method thereof |
| CN111947787A (en) * | 2020-07-06 | 2020-11-17 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
-
2021
- 2021-02-01 CN CN202110138405.1A patent/CN113328003B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140175588A1 (en) * | 2012-12-21 | 2014-06-26 | Robert Bosch Gmbh | Suspension and absorber structure for bolometer |
| CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
| CN106124066A (en) * | 2016-06-13 | 2016-11-16 | 烟台睿创微纳技术股份有限公司 | The microbolometer of a kind of high fill factor and preparation method |
| CN110160656A (en) * | 2017-09-30 | 2019-08-23 | 烟台睿创微纳技术股份有限公司 | A kind of non refrigerating infrared imaging sensor based on super surface |
| CN110120437A (en) * | 2019-04-30 | 2019-08-13 | 上海集成电路研发中心有限公司 | A kind of infrared detector structure of high fill factor and preparation method thereof |
| CN110332998A (en) * | 2019-06-17 | 2019-10-15 | 华中科技大学 | Metamaterial non-refrigerating infrared focal plane polychrome polarization detector and preparation method thereof |
| CN111947787A (en) * | 2020-07-06 | 2020-11-17 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113791048A (en) * | 2021-09-13 | 2021-12-14 | 上海翼捷工业安全设备股份有限公司 | MEMS infrared light source and preparation method thereof |
| CN113594193A (en) * | 2021-09-30 | 2021-11-02 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
| CN113594193B (en) * | 2021-09-30 | 2022-01-25 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
| CN113639879A (en) * | 2021-10-13 | 2021-11-12 | 北京北方高业科技有限公司 | Preparation method of infrared microbridge detector with multilayer structure and infrared microbridge detector |
| CN117174777A (en) * | 2023-10-26 | 2023-12-05 | 北京北方高业科技有限公司 | Absorption plate structure of amorphous silicon infrared detector and process method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113328003B (en) | 2021-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113328003B (en) | Infrared detector and preparation method thereof | |
| US7288765B2 (en) | Device for detecting infrared radiation with bolometric detectors | |
| US6552344B1 (en) | Infrared detector and method of making the infrared detector | |
| US6335478B1 (en) | Thermopile infrared sensor, thermopile infrared sensors array, and method of manufacturing the same | |
| TWI248513B (en) | Infrared sensor | |
| JP3878937B2 (en) | Infrared array detector | |
| CN113328002B (en) | Infrared detector and preparation method thereof | |
| US8350350B2 (en) | Optical sensor | |
| CN113659027B (en) | Infrared detector and preparation method thereof | |
| US4575631A (en) | Infra-red detector | |
| JP4915555B2 (en) | Infrared sensor | |
| JP3339276B2 (en) | Infrared detector | |
| CN113720482A (en) | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process | |
| CN113659028B (en) | Infrared detector and preparation method thereof | |
| JP2008082791A (en) | Infrared sensor | |
| JP2011203226A (en) | Infrared sensor module | |
| JP2910448B2 (en) | Infrared sensor | |
| CN113720476B (en) | Infrared detector mirror image element based on CMOS (complementary metal oxide semiconductor) process and infrared detector | |
| CN113720464B (en) | Infrared detector mirror image element based on CMOS (complementary metal oxide semiconductor) process and infrared detector | |
| JP3775830B2 (en) | Infrared detector | |
| US20030164450A1 (en) | Thermal radiation detection device, method for producing the same and use of said device | |
| CN113720481B (en) | Infrared detector mirror image element based on CMOS (complementary metal oxide semiconductor) process and infrared detector | |
| CN113720479B (en) | Infrared detector pixel and infrared detector based on CMOS (complementary Metal oxide semiconductor) process | |
| CN113720474B (en) | Infrared detector mirror image element based on CMOS (complementary metal oxide semiconductor) process and infrared detector | |
| JP3052329B2 (en) | Infrared sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |