CN110160656A - A kind of non refrigerating infrared imaging sensor based on super surface - Google Patents
A kind of non refrigerating infrared imaging sensor based on super surface Download PDFInfo
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- CN110160656A CN110160656A CN201910250576.6A CN201910250576A CN110160656A CN 110160656 A CN110160656 A CN 110160656A CN 201910250576 A CN201910250576 A CN 201910250576A CN 110160656 A CN110160656 A CN 110160656A
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to a kind of non refrigerating infrared imaging sensors based on super surface, including the double-deck non-refrigerated infrared detector, the double-deck non-refrigerated infrared detector includes semiconductor substrate and detector body, detector body includes first layer hanging structure and second layer hanging structure, first layer hanging structure includes metallic reflector, insulating medium layer, metal electrode layer, electrode protecting layer, first supporting layer, temperature-sensitive protective layer and heat-sensitive layer, second layer hanging structure includes Meta Materials supporting layer and Meta Materials support protective layer, metamaterial structure is equipped on Meta Materials support protective layer, the metamaterial structure uses NiCr or/and Al, its thickness is between 12~30nm, preparation process is simple, it can be compatible with CMOS technology, and it can be realized multi-color detection, broadband detection, the functions such as narrow spectrum detection.
Description
The application is application number 201710918927.7, applying date 2017.09.30, " one kind is based on super surface to denomination of invention
Non refrigerating infrared imaging sensor and preparation method thereof " divisional application.
Technical field
The present invention relates to a kind of non refrigerating infrared imaging sensors based on super surface, belong to non-refrigerated infrared detector
Field.
Background technique
Non-refrigerated infrared detector (uncooled infrared bolometer) in addition to military field application other than,
It is widely used in civil field, such as fire-fighting, automobile auxiliary, forest fire protection, field detection, environmental protection field.
Electromagnetism Meta Materials (Metamaterial), abbreviation Meta Materials refer to a kind of with super not available for natural material
The artificial composite structure or composite material of normal electromagnetic property；2001, Walser proposed the concept benefit of electromagnetism Meta Materials for the first time
Any " the cutting out " of electromagnetic wave and light wave performance may be implemented with Meta Materials, thus can get such as perfect lens, stealthy cape,
The particular devices such as electromagnetic wave perfection absorption；Nowadays, Meta Materials have become theoretical basis research and technical application research is paid close attention to jointly
Hot spot.According to effective Media Theory, the characteristic of Meta Materials can be regulated and controled by the structurally ordered design of key physical size；
So Meta Materials can be made to couple with the generation of the electromagnetic component of incident electromagnetic wave by adjusting its physical size and material parameter,
It is " complete thus to obtain special Meta Materials to make the overwhelming majority (or even 100%) of the incident electromagnetic wave of special frequency band be absorbed
U.S. absorber "；After N.I.Landy et al. first time experimental verification Meta Materials perfection wave-absorber, Meta Materials wave-absorber is taken
Quick development was obtained, service band gradually extends to THz wave band, infrared or even visible light wave range from radio-frequency range.
Traditional infrared detector is in order to realize broadband function, and the general method using adjustment resonant cavity height is (specially
Sharp CN103759838A), by the adjustment of the height, enhance the absorption of specific band, thus realize broadband absorption, but should
The technology difficulty of method is very big, has band selective for infrared radiation absorption.
Traditional infrared detector is when realizing polarization function, generally using external polarizing film in conjunction with optical lens.
This method not only increases the design difficulty of optical path, and increases the cost of product；
Traditional infrared detector generally uses the resonant cavity group of a variety of different heights when realizing polychrome function
It closes, by adjusting the height of resonant cavity, increases specific absorption spectral coverage.This method considerably increases processing step, improves work
The difficulty that skill is realized, and since the control of the height of different resonant cavities is very difficult, so being very easy to lead during the preparation process
It causes product that cannot reach ideal height, cannot also realize the absorption of target wave band, promoted so as to cause the crash rate of product.
Summary of the invention
In view of the above-mentioned deficiencies in the prior art, it is low to provide a kind of additional thermal capacitance by the present invention, manufacture craft it is simple and
Detect target capability it is strong based on novel super surface non refrigerating infrared imaging sensor.
The technical scheme to solve the above technical problems is that a kind of non refrigerating infrared imaging based on super surface passes
Sensor, including the double-deck non-refrigerated infrared detector, the bilayer non-refrigerated infrared detector includes partly leading comprising reading circuit
Body substrate and detector body with microbridge support construction, the detector body include that first layer hanging structure and the second layer are outstanding
Hollow structure, the second layer hanging structure are arranged on the first layer hanging structure, and the first layer hanging structure includes gold
Belong to reflecting layer, insulating medium layer, metal electrode layer, electrode protecting layer, the first supporting layer, temperature-sensitive protective layer and heat-sensitive layer, it is described
Second layer hanging structure includes that Meta Materials supporting layer and the Meta Materials being arranged on the Meta Materials supporting layer support protective layer,
Meta Materials support protective layer to be equipped with metamaterial structure, and the metamaterial structure uses NiCr or/and Al, thickness 12~
Between 30nm.
In the present invention sensor the utility model has the advantages that
(1) it realizes metamaterial structure and the double-deck non-refrigerated infrared detector carries out single-chip integration, it can be according to practical need
It wants, custom design structure: since Meta Materials electromagnetic wave absorption is mainly based upon the combination of physical structure and material parameter, so can
To pass through the different structure of design and using different materials in conjunction with the structure, so as to realize the absorption of multiple functions
The functions such as structure, such as broadband, polarization, polychrome, narrow spectrum.The production of the structure is completely compatible with traditional CMOS technology, and
It not will increase technology difficulty.And the structure and infrared detector are one complete whole, enormously simplify process flow, mention
Production efficiency is risen；
(2) by using metamaterial structure in conjunction with infrared detector, Meta Materials electromagnetic wave absorption can enhance infrared acquisition
The electromagnetic wave signal that device itself absorbs, two signals are superimposed completely, that is to say, that pass through Meta Materials and infrared spy
The intensity of signal can be increased by surveying device combination, and can handle the signal by a reading circuit, and is increased without additional
Algorithm and circuit, simplify the signal processing module of rear end, save manpower and cost.
(3) the double-deck non-refrigerated infrared detector of Meta Materials is combined, additional thermal capacitance is low, can be realized multi-functional infrared
The single-chip integration of detector, so as to promoted detector detection target ability.
Further, the semiconductor substrate is equipped with the metallic reflector and the insulating medium layer, and the metal is anti-
Penetrating layer includes several metal blocks；
The insulating medium layer is equipped with first supporting layer, and first supporting layer is equipped with the first anchor point hole and the
The bottom in two anchor point holes, first anchor point hole and the second anchor point hole is respectively equipped with first through hole and the second through-hole, and described first
Through-hole and the second through-hole respectively terminate in the metal block, on first supporting layer, in the first anchor point hole and the second anchor point hole
Equipped with metal electrode layer, the metal electrode layer includes the metal electrode being arranged on first supporting layer and is arranged first
Metal connecting line in anchor point hole and the second anchor point hole, the metal electrode layer are equipped with electrode protecting layer, the electrode protecting layer
It is equipped with contact hole, the contact hole terminates at the metal electrode, and the electrode protecting layer is equipped with heat-sensitive layer, the temperature-sensitive
Layer is equipped with temperature-sensitive protective layer；
The temperature-sensitive protective layer is equipped with the second layer hanging structure, and the Meta Materials supporting layer is equipped with third anchor point
The section in hole and the 4th anchor point hole, third anchor point hole and the 4th anchor point hole is trapezoidal, the protection of temperature-sensitive described in lower end in contact
Layer.
Beneficial effect using above-mentioned further technical solution is: the design of the second layer structure of double-layer structure will not be by
The influence of one layer of structure, the structure diversification that can be designed, and will not influence the heat-sensitive layer temperature-sensitive effect of first layer structure.
Further, the insulating medium layer silicon nitride film or silica membrane, with a thickness of 0.02~0.30 μm, institute
It states the first supporting layer and Meta Materials supporting layer is low stress nitride silicon thin film, thickness is 0.10~0.30 μm, the metal
Electrode layer is metallic aluminium or tungsten, and the heat-sensitive layer is vanadium oxide, manganese oxide, copper oxide, molybdenum oxide, titanium oxide or polysilicon etc..
Further, the metamaterial structure includes the rectangle of rectangular box with the intermediate position that the rectangular box is arranged in
Central plate, between the rectangular box and the rectangular centre plate be equipped with criss-cross transverse bar and vertical bar, the rectangular box,
Form multiple rectangle hollow outs between transverse bar and vertical bar, the area of the rectangular centre plate be equal to adjacent four rectangle hollow outs and its it
Between transverse bar and vertical bar area and, the rectangular centre plate does not include the transverse bar and vertical bar that its surrounding is arranged in, the rectangle
Framework, transverse bar and vertical bar with a thickness of 12nm, material NiCr.
Beneficial effect using above-mentioned further technical solution is: can be realized broadband absorption, between 3-19 μm
Wavelength between be attained by very high absorptivity.
Further, the outer profile of the metamaterial structure is rectangle, is equipped with rectangle hollow out at center, the outer profile is equipped with
Horizontal center line and vertical centerline are equipped between the rectangle hollow out and the outer profile and are bent to form closed loop configuration back and forth
Strip, the closed loop configuration that the strip is formed is symmetrical respectively about the horizontal center line and the vertical centerline, described to close
The bending place of ring structure is right angle bending, and the material of the strip is NiCr, and with a thickness of 20nm, width is 0.5 μm -5 μm.
Using above-mentioned further technical solution the utility model has the advantages that 6 μm, 10.5 μm and 19 μm of high-selenium corn may be implemented
Rate, and the absorptivity of remaining wave band is relatively low, and the effect of polychrome type infrared detector may be implemented using the structure.
Further, the quadrangle of the rectangular box is equipped with chamfering, is less than close to the area of the rectangle hollow out of chamfering separate
The area of rectangle hollow out at chamfering.
Further, the metamaterial structure includes that rectangular profile is formed by bandlet, in each edge of the rectangular profile
The heart is equipped with inside U-shaped and bends, and the material of the bandlet is NiCr, and with a thickness of 20nm, width is 0.5 μm -5 μm.
Using the beneficial effect of above-mentioned further technical solution is: the effect to realize polychrome type infrared detector.
Further, the outer profile of the metamaterial structure is rectangle, is equipped with cross engraved structure, the super material at center
The material for expecting structure is NiCr, and with a thickness of 20nm, the gap width of cross engraved structure is 0.5 μm -5 μm.
Beneficial effect using above-mentioned further technical solution is: 14-17 μm of infrared waves may be implemented with this configuration
The high-absorbility of section, realizes the absorption of certain spectral, by adjusting the size in gap, the size of structure and the thickness of film
Degree can also be adjusted to spectral coverage is absorbed, can obtain target spectral coverage by controlling factors above.
Further, the metamaterial structure includes a pair of rectangle frame arranged symmetrically, and the adjacent edge of two rectangle frames, which is equipped with, to be opened
Mouthful, connecting band is equipped among two rectangle frames, the connecting band passes through the side of the opening and two rectangle frames
Side is vertical.
Beneficial effect using above-mentioned further technical solution is: the absorption of certain spectral may be implemented.
Further, the metamaterial structure is concave character type structure, material Al, with a thickness of 30nm.
Beneficial effect using above-mentioned further technical solution is: the effect of polarization may be implemented.
Further, the metamaterial structure includes four regions arranged in arrays, respectively first area, the secondth area
Domain, third region and the fourth region are respectively equipped with the first metamaterial structure, the second metamaterial structure, third in four regions
Metamaterial structure and the 4th metamaterial structure, first metamaterial structure is identical with the shape of third metamaterial structure, described
Second metamaterial structure is identical as the shape of the 4th metamaterial structure.
Beneficial effect using above-mentioned further technical solution is: by the way that different shape and thickness is arranged in four regions
Metamaterial structure can be with since coupling effect of the interaction and electromagnetic field between structure between different structure is different
Make sensor that can not only realize the superposition of each function, and the effect of each function can be made to enhance, is i.e. increase sensor
Overall absorption rate.
Further, first metamaterial structure be include rectangular box and the intermediate position that the rectangular box is set
Rectangular centre plate, between the rectangular box and the rectangular centre plate be equipped with criss-cross transverse bar and vertical bar, the square
Multiple rectangle hollow outs are formed between shape framework, transverse bar and vertical bar, the area of the rectangular centre plate is equal to adjacent four rectangles and engraves
It is empty and its between transverse bar and vertical bar area and, the rectangular box, transverse bar and vertical bar with a thickness of 12nm, material is
NiCr；Second metamaterial structure includes multiple vertical thin slices being arranged successively, and the vertical thin slice is Al, with a thickness of
30nm。
Using above-mentioned further technical solution the utility model has the advantages that can be achieved at the same time the function and broadband suction of polarization
It receives.
Further, first metamaterial structure be include rectangular box and the intermediate position that the rectangular box is set
Rectangular centre plate, between the rectangular box and the rectangular centre plate be equipped with criss-cross transverse bar and vertical bar, the square
Multiple rectangle hollow outs are formed between shape framework, transverse bar and vertical bar, the area of the rectangular centre plate is equal to adjacent four rectangles and engraves
It is empty and its between transverse bar and vertical bar area and, the rectangular box, transverse bar and vertical bar with a thickness of 12nm, material is
NiCr；Second metamaterial structure is concave character type structure, material Al, with a thickness of 30nm.
Beneficial effect using above-mentioned further technical solution is: can be achieved at the same time the function and broadband suction of polarization
It receives.
The invention further relates to a kind of preparation methods of non refrigerating infrared imaging sensor based on super surface, including following step
It is rapid:
Step 1. provides a double-deck non-refrigerated infrared detector for not carrying out sacrificial layer release, including including reading circuit
Semiconductor substrate and detector body with microbridge support construction, the detector body includes first layer hanging structure and second
Layer hanging structure, the first layer hanging structure includes metal block, insulating medium layer, the first sacrificial layer, metal electrode layer, electrode
Protective layer, the first supporting layer, temperature-sensitive protective layer and heat-sensitive layer, the second layer hanging structure include the second sacrificial layer, Meta Materials
Supporting layer and the Meta Materials being arranged on the Meta Materials supporting layer support protective layer；
Step 2: preparing metamaterial structure on Meta Materials support protective layer, the super material of preparation on Meta Materials support protective layer
Expect structure, firstly, metamaterial layer is deposited on Meta Materials support protective layer, then, in the surface spin coating photoresist of metamaterial layer,
By the method for Lithography Etching, obtain metamaterial structure on Meta Materials support protective layer, the metamaterial layer be NiCr and/or
Al, thickness is between 12~30nm；
Step 3: structure release discharges the first sacrificial layer and the second sacrificial layer, forms the uncooled ir based on super surface
Imaging sensor.
The beneficial effect of preparation method is in the present invention:
(1) can according to actual needs, custom design structure: since Meta Materials electromagnetic wave absorption is mainly based upon physics knot
The combination of structure and material parameter, it is possible to by designing different structures and using different materials in conjunction with the structure,
So as to realize the functions such as the absorbing structure of multiple functions, such as broadband, polarization, polychrome, narrow spectrum.The production of the structure is complete
Entirely compatible with traditional CMOS technology, without will increase technology difficulty, and the structure and infrared detector are one complete
It is whole, process flow is enormously simplified, production efficiency is improved；
(2) by using metamaterial structure in conjunction with infrared detector, Meta Materials electromagnetic wave absorption can enhance infrared acquisition
The electromagnetic wave signal that device itself absorbs, two signals are superimposed completely, that is to say, that pass through Meta Materials and infrared spy
The intensity of signal can be increased by surveying device combination, and can handle the signal by a reading circuit, and is increased without additional
Algorithm and circuit, simplify the signal processing module of rear end, save manpower and cost；
(3) infrared detector of Meta Materials is combined, additional thermal capacitance is low, can be realized the list of multi-functional infrared detector
Piece is integrated, so as to promoted detector detection target ability.
Further, the preparation method of the double-deck non-refrigerated infrared detector of sacrificial layer release is not carried out described in step 1
It is as follows:
1) metallic reflector is made on comprising reading circuit semiconductor substrate, and place is patterned to metallic reflector
Reason, it is graphical after metal layer form several metal blocks；Metal block is electrically connected with the reading circuit in semiconductor substrate；Complete
At depositing insulating medium layer on patterned metal layer；
2) the first sacrificial layer is deposited on the insulating medium layer, and processing, shape are patterned to the first sacrificial layer
At the first anchor point hole and the second anchor point hole, the section in first anchor point hole and the second anchor point hole be it is trapezoidal, it is then sacrificial first
The first supporting layer is deposited on domestic animal layer, and photoetching or etching are carried out directly to the first supporting layer in the first anchor point hole and the second anchor point hole
To the metal block is contacted, first through hole and the second through-hole are formed；
3) the deposit metal electrodes layer on the first supporting layer, and processing is patterned to metal electrode layer, form metal
Electrode and metal connecting line, then depositing electrode protective layer on the metal electrode layer after graphical treatment, then to electrode protection
Layer is patterned processing, and photoetching or etched electrodes protective layer are until contact the metal electrode, the first contact hole of formation and the
Two contact holes；
4) heat-sensitive layer is deposited on the electrode protecting layer after graphical treatment, and processing is patterned to heat-sensitive layer, is schemed
Shapeization treated heat-sensitive layer only on bridge floor, then deposits temperature-sensitive protective layer on the heat-sensitive layer after graphical treatment；
5) depositing second sacrificial layer on temperature-sensitive protective layer, and processing is patterned to the second sacrificial layer, form third
Then the trapezoidal structure in section in anchor point hole and the 4th anchor point hole, third anchor point hole and the 4th anchor point hole is sacrificed second
Meta Materials supporting layer and Meta Materials support protective layer are sequentially depositing on layer.
Detailed description of the invention
Fig. 1 is the status diagram that first through hole and the second through-hole are formed in the present invention；
Fig. 2 is the diagrammatic cross-section for not carrying out the first layer hanging structure of sacrificial layer release in the present invention；
Fig. 3 is not carry out the first layer hanging structure of sacrificial layer release and second layer hanging structure cuts open in the embodiment of the present invention
Face schematic diagram；
Fig. 4 is the schematic diagram of the section structure of sensor in the present invention；
Fig. 5 is the schematic diagram of the metamaterial structure of the embodiment of the present invention 1；
Fig. 6 is the infrared absorpting light spectra of the embodiment of the present invention 1 (abscissa is wavelength, and ordinate is absorptivity)；
Fig. 7 is the schematic diagram of the metamaterial structure of the embodiment of the present invention 2；
Fig. 8 is the infrared absorpting light spectra of the embodiment of the present invention 3 (abscissa is wavelength, and ordinate is absorptivity)；
Fig. 9 is the schematic diagram of the metamaterial structure of the embodiment of the present invention 3；
Figure 10 is the schematic diagram of the metamaterial structure of the embodiment of the present invention 4；
Figure 11 is the infrared absorpting light spectra of the embodiment of the present invention 5 (abscissa is wavelength, and ordinate is absorptivity)；
Figure 12 is the schematic diagram of the metamaterial structure of the embodiment of the present invention 5；
Figure 13 is the schematic diagram of the metamaterial structure of the embodiment of the present invention 6；
Figure 14 is the schematic diagram of the metamaterial structure of the embodiment of the present invention 7；
Figure 15 is the schematic diagram of the metamaterial structure of embodiment 8 in the present invention；
In the accompanying drawings, list of designations represented by each label is as follows: 1, semiconductor substrate, 2, metallic reflector, 2-
1, metal block, 3, insulating medium layer, 4, first layer sacrificial layer, 4-1, the first anchor point hole, 4-2, the second anchor point hole, the 5, first support
Layer, 4-1, first through hole, 4-2, the second through-hole, 6, metal electrode layer, 6-1, metal connecting line, 6-2, metal electrode, 7, electrode guarantor
Sheath, 8, heat-sensitive layer, 9, temperature-sensitive protective layer, 10, second layer sacrificial layer, 10-1, third anchor point hole, 10-2, the 4th anchor point hole,
11, Meta Materials supporting layer, 12, Meta Materials support protective layer, 13, metamaterial structure, 13-1, vertical bar, 13-2, transverse bar, 13-3, square
Shape hollow out, 13-4, rectangular centre plate, 13-5, strip, 13-6, rectangle hollow out, 13-7, bandlet, 13-8, U-shaped bending, 13-9,
Cross engraved structure, 13-10, connecting band, 13-11, rectangle frame, 13-12, vertical thin slice.
Specific embodiment
Below in conjunction with attached drawing to the principle and feature based on super surface non refrigerating infrared imaging sensor a kind of in the present invention
It is described, the given examples are served only to explain the present invention, is not intended to limit the scope of the present invention.
Embodiment 1
As shown in figures 1 to 6, a kind of non refrigerating infrared imaging sensor based on super surface, including the double-deck uncooled ir are visited
Survey device, it is described bilayer non-refrigerated infrared detector include comprising reading circuit semiconductor substrate 1 and with microbridge support construction
Detector body, the detector body include first layer hanging structure and second layer hanging structure, and the second layer is vacantly tied
Structure is arranged on first layer hanging structure, and the first layer hanging structure includes metallic reflector 2, insulating medium layer 3, metal electricity
Pole layer 6, electrode protecting layer 7, the first supporting layer 5, temperature-sensitive protective layer 9 and heat-sensitive layer 8, the second layer hanging structure include super material
Expect that supporting layer 11 and setting support protective layer 12 in 11 Meta Materials of Meta Materials supporting layer, on Meta Materials support protective layer 12
Equipped with metamaterial structure 13, the metamaterial structure 13 uses NiCr or/and Al, and thickness is between 12~30nm.
The semiconductor substrate 1 is equipped with the metallic reflector 2 and insulating medium layer 3, and the metallic reflector 2 includes
Several metal blocks 2-1；
The insulating medium layer 3 be equipped with the first supporting layer 5, first supporting layer 5 be equipped with the first anchor point hole 4-1 and
The bottom of second anchor point hole 4-2, first anchor point hole 4-1 and the second anchor point hole 4-2 are respectively equipped with first through hole 5-1 and second
Through-hole 5-2, the first through hole 5-1 and the second through-hole 5-2 respectively terminate in the metal block 2-1, first supporting layer 5
Metal electrode layer 6 is equipped in upper, the first anchor point hole 4-1 and the second anchor point hole 4-2, the metal electrode layer 6 includes being arranged in institute
The metal connecting line stating the metal electrode 6-2 on the first supporting layer 5 and being arranged in the first anchor point hole 4-1 and the second anchor point hole 4-2
6-1, the metal electrode layer 6 are equipped with electrode protecting layer 7, and the electrode protecting layer 7 is equipped with contact hole, and the contact hole is whole
The metal electrode 6-2 is terminated in, the electrode protecting layer 7 is equipped with the heat-sensitive layer 8, and the heat-sensitive layer 8 is equipped with the heat
Quick protective layer 9；
The temperature-sensitive protective layer 9 is equipped with the second layer hanging structure, and the Meta Materials supporting layer 11 is equipped with third
The section of anchor point hole 10-1 and the 4th anchor point hole 10-2, third anchor point hole 10-1 and the 4th anchor point hole 10-2 are trapezoidal,
Temperature-sensitive protective layer 9 described in lower end in contact；
The metamaterial structure 13 is the rectangular centre plate 13- at the intermediate position that the rectangular box is arranged in rectangular box
4, criss-cross transverse bar 13-2 and vertical bar 13-1, the square are equipped between the rectangular box and the rectangular centre plate 13-4
Multiple rectangle hollow out 13-3 are formed between shape framework, transverse bar 13-2 and vertical bar 13-1, the intermediate position of the rectangular box is equipped with
The area of rectangular centre plate 13-4, the rectangular centre plate 13-4 be the adjacent four rectangle hollow out 13-3 and its between cross
Muscle and the area of vertical bar and, the rectangular box, transverse bar 13-2 and vertical bar 13-1 with a thickness of 12nm, material NiCr.
Embodiment 2
With implement 1 the difference is that, as shown in fig. 7, the outer profile of the metamaterial structure 13 is rectangle, at center
Equipped with rectangle hollow out 13-6, the outer profile is equipped with horizontal center line and vertical centerline, the rectangle hollow out 13-6 and described
The strip 13-5 for being bent to form closed loop configuration back and forth is equipped between outer profile, the closed loop configuration that the strip 13-5 is formed is closed respectively
Symmetrical in the horizontal center line and the vertical centerline, the bending place of the closed loop configuration is right angle bending, the strip
Material be NiCr, with a thickness of 20nm, width is 0.5 μm -5 μm.
Embodiment 3
Difference from example 1 is that as illustrated in figs. 8-9, the metamaterial structure 13 includes by bandlet 13-7
Rectangular profile is formed, the center of each edge of the rectangular profile is equipped with inside U-shaped and bends 13-8, the bandlet 13-7's
Material is NiCr, and with a thickness of 20nm, width is 0.5 μm -5 μm.
Embodiment 4
Difference from example 1 is that as shown in Figure 10, the outer profile of the metamaterial structure is rectangle, center
Place is equipped with cross engraved structure 13-9, and the material of the metamaterial structure 13 is NiCr, with a thickness of 20nm, cross hollow out knot
The gap width of structure 13-9 is 0.5 μm -5 μm.
Embodiment 5
The difference is that, as shown in Figure 11-Figure 12, the metamaterial structure 13 includes that a pair is symmetrically set with implementation 1
Rectangle frame 13-11 is set, the adjacent edge of two rectangle frame 13-11 is equipped with opening, the company of being equipped among two rectangle frame 13-11
Tape splicing 13-10, it is vertical with the side of two rectangle frame 13-11 that the connecting band 13-10 passes through the opening.
Embodiment 6
Difference from example 1 is that as shown in figure 13, the metamaterial structure 13 is concave character type structure, material
For Al, with a thickness of 30nm.
Embodiment 7
Difference from example 1 is that as shown in figure 14, the metamaterial structure 13 includes arranged in arrays four
A region, respectively first area, second area, third region and the fourth region are respectively equipped in four regions and the first surpass
Material structure, the second metamaterial structure, third metamaterial structure and the 4th metamaterial structure, first metamaterial structure and
The shape of three metamaterial structures is identical, and second metamaterial structure is identical as the shape of the 4th metamaterial structure；
Described first, third metamaterial structure includes rectangular box and rectangular centre plate 13-4, the rectangular box and square
Criss-cross transverse bar 13-2 and vertical bar 13-1, the rectangular box, transverse bar 13-2 and vertical bar are equipped between shape central plate 13-4
Multiple rectangle hollow out 13-3 are formed between 13-1, the intermediate position of the rectangular box is equipped with rectangular centre plate 13-4, the square
The area of shape central plate 13-4 be the adjacent four rectangle hollow out 13-3 and its between transverse bar 13-2 and vertical bar 13-1 face
Product and, the rectangular box, transverse bar 13-2 and vertical bar 13-1 with a thickness of 12nm, material NiCr；
Described second, the 4th metamaterial structure includes multiple vertical thin slice 13-12 being arranged successively, the vertical thin slice
13-12 is Al, with a thickness of 30nm.
Embodiment 8
With embodiment 7 the difference is that, as shown in figure 15 described first, third metamaterial structure include 13-3 and square
Shape central plate 13-4 is equipped with criss-cross transverse bar 13-2 and vertical bar 13- between the rectangular box and rectangular centre plate 13-4
1, multiple rectangle hollow out 13-3, the centre of the rectangular box are formed between the rectangular box, transverse bar 13-2 and vertical bar 13-1
Position is equipped with rectangular centre plate 13-4, the area of the rectangular centre plate 13-4 be the adjacent four rectangle hollow out 13-3 and its
Between transverse bar 13-2 and vertical bar 13-1 area and, the rectangular box, transverse bar 13-2 and vertical bar 13-1 with a thickness of 12nm,
Material is NiCr；
Described second, four metamaterial structures are concave character type structure, material Al, with a thickness of 30nm.
The invention further relates to a kind of preparation methods based on novel super surface non refrigerating infrared imaging sensor, picture 1-4
It is shown, the specific steps are as follows:
Step 1. provides a double-deck non-refrigerated infrared detector for not carrying out sacrificial layer release, including including reading circuit
Semiconductor substrate 1 and detector body with microbridge support construction, the detector body includes first layer hanging structure and
Two layers of hanging structure, the first layer hanging structure include metal block 2-1, insulating medium layer 3, the first sacrificial layer 4, metal electrode
Layer 6, electrode protecting layer 7, the first supporting layer 5, temperature-sensitive protective layer 9 and heat-sensitive layer 8, the second layer hanging structure include second sacrificial
Domestic animal layer 10, Meta Materials supporting layer 11 and the Meta Materials support protective layer 12 being arranged on the Meta Materials supporting layer 11；
The double-deck non-refrigerated infrared detector for not carrying out sacrificial layer release the preparation method is as follows:
1) figure is being carried out comprising making metallic reflector 2 in reading circuit semiconductor substrate 1, and to metallic reflector 2
Change processing, it is graphical after metal layer form several metal blocks 2-1；Reading circuit on metal block 2-1 and semiconductor substrate 1
Electrical connection；Insulating medium layer 3 is deposited on completing patterned metal layer；
2) the first sacrificial layer 4 is deposited on the insulating medium layer 3, and processing is patterned to the first sacrificial layer 4,
Form the first anchor point hole 4-1 and the second anchor point hole 4-2, the section of first anchor point hole 4-1 and the second anchor point hole 4-2 are ladder
Then shape deposits the first supporting layer 5 on the first sacrificial layer 4, and in the first anchor point hole 4-1 and the second anchor point hole 4-2
One supporting layer 5 carries out photoetching or is etched through the contact metal block 2-1, forms first through hole 5-1 and the second through-hole 5-2, such as
Shown in Fig. 1；
3) the deposit metal electrodes layer 6 on the first supporting layer 5, and processing is patterned to metal electrode layer 6, form gold
Belong to electrode 6-2 and metal connecting line 6-1, then depositing electrode protective layer 7 on the metal electrode layer 6 after graphical treatment, then
Processing is patterned to electrode protecting layer 7, photoetching or etched electrodes protective layer 7 form the until contact the metal electrode 6
One contact hole and the second contact hole；
4) heat-sensitive layer 8 is deposited on the electrode protecting layer 7 after graphical treatment, and processing is patterned to heat-sensitive layer 8,
Heat-sensitive layer 8 after graphical treatment only on bridge floor, then deposits temperature-sensitive protective layer 9 on the heat-sensitive layer 8 after graphical treatment,
As shown in Figure 2；
5) depositing second sacrificial layer 10 on temperature-sensitive protective layer 9, and processing is patterned to the second sacrificial layer 10, it is formed
The section of third anchor point hole 10-1 and the 4th anchor point hole 10-2, third anchor point hole 10-1 and the 4th anchor point hole 10-2 are trapezoidal
Structure, is then sequentially depositing Meta Materials supporting layer 11 on the second sacrificial layer 10 and Meta Materials support protective layer 12 is as shown in Figure 3；
Step 2: preparing metamaterial structure on Meta Materials support protective layer, the super material of preparation on Meta Materials support protective layer
Expect structure, firstly, metamaterial layer is deposited on Meta Materials support protective layer, then, in the surface spin coating photoresist of metamaterial layer,
By the method for Lithography Etching, obtain metamaterial structure on Meta Materials support protective layer, the metamaterial layer be NiCr and/or
Al, thickness, can according to actual needs between 12~30nm, and custom design structure forms different metamaterial structures, realize
The functions such as the absorbing structure of multiple functions, such as broadband, polarization, polychrome, narrow spectrum；
Step 3: structure release discharges the first sacrificial layer and the second sacrificial layer 10, and it is red to form the non-brake method based on super surface
Outer imaging sensor, as shown in Figure 4.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (2)
1. a kind of non refrigerating infrared imaging sensor based on super surface, which is characterized in that including the double-deck Uncooled infrared detection
Device, the bilayer non-refrigerated infrared detector includes the semiconductor substrate comprising reading circuit and the detection with microbridge support construction
Device ontology, the detector body include first layer hanging structure and second layer hanging structure, and the second layer hanging structure is set
It sets on the first layer hanging structure, the first layer hanging structure includes metallic reflector, insulating medium layer, metal electrode
Layer, electrode protecting layer, the first supporting layer, temperature-sensitive protective layer and heat-sensitive layer, the second layer hanging structure include Meta Materials support
Layer and the Meta Materials being arranged on Meta Materials supporting layer support protective layer, are equipped with Meta Materials on Meta Materials support protective layer
Structure；
The metamaterial structure includes that rectangular profile is formed by bandlet, and the center of each edge of the rectangular profile is equipped with inside
U-shaped bending, the material of the bandlet are NiCr, and with a thickness of 20nm, width is 0.5 μm -5 μm.
2. the non refrigerating infrared imaging sensor according to claim 1 based on super surface, which is characterized in that described partly to lead
Body substrate is equipped with the metallic reflector and the insulating medium layer, and the metallic reflector includes several metal blocks；
The insulating medium layer is equipped with first supporting layer, and first supporting layer is equipped with the first anchor point hole and the second anchor
The bottom in spot hole, first anchor point hole and the second anchor point hole is respectively equipped with first through hole and the second through-hole, the first through hole
The metal block is respectively terminated in the second through-hole, is equipped on first supporting layer, in the first anchor point hole and the second anchor point hole
Metal electrode layer, the metal electrode layer include the metal electrode being arranged on first supporting layer and are arranged in the first anchor point
Metal connecting line in hole and the second anchor point hole, the metal electrode layer are equipped with electrode protecting layer, set on the electrode protecting layer
There is a contact hole, the contact hole terminates at the metal electrode, and the electrode protecting layer is equipped with heat-sensitive layer, on the heat-sensitive layer
Equipped with temperature-sensitive protective layer；
The temperature-sensitive protective layer be equipped with the second layer hanging structure, the Meta Materials supporting layer be equipped with third anchor point hole and
The section in the 4th anchor point hole, third anchor point hole and the 4th anchor point hole is trapezoidal, temperature-sensitive protective layer described in lower end in contact.
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| CN113984215A (en) * | 2021-11-23 | 2022-01-28 | 天津津航技术物理研究所 | Near-zero power consumption MEMS infrared detector |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012008551A1 (en) * | 2010-07-15 | 2012-01-19 | 旭硝子株式会社 | Process for producing metamaterial, and metamaterial |
| US20140193301A1 (en) * | 2011-06-07 | 2014-07-10 | Nanyang Technological University | Method of generating a metamaterial, and a metamaterial generated thereof |
| CN204857970U (en) * | 2015-08-20 | 2015-12-09 | 深圳光启高等理工研究院 | Terahertz is super material now |
| US9322953B2 (en) * | 2010-05-18 | 2016-04-26 | Purdue Research Foundation | Energy absorbing materials |
| CN107150995A (en) * | 2017-05-11 | 2017-09-12 | 烟台睿创微纳技术股份有限公司 | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007103560A2 (en) * | 2006-03-08 | 2007-09-13 | Los Alamos National Security, Llc | Dynamical/tunable electromagnetic materials and devices |
| WO2011050272A2 (en) * | 2009-10-23 | 2011-04-28 | Trustees Of Boston University | Nanoantenna arrays for nanospectroscopy, methods of use and methods of high-throughput nanofabrication |
| US8921789B2 (en) * | 2010-09-21 | 2014-12-30 | California Institute Of Technology | Tunable compliant optical metamaterial structures |
| JP5919789B2 (en) * | 2011-12-13 | 2016-05-18 | 富士通株式会社 | Infrared imaging device |
| CN103575407A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz radiation detector |
| DE102012220207A1 (en) * | 2012-11-07 | 2014-05-08 | Robert Bosch Gmbh | An image pixel device for detecting electromagnetic radiation, a sensor array for detecting electromagnetic radiation and a method for detecting electromagnetic radiation by means of an image pixel device |
| CN102997999A (en) * | 2012-11-26 | 2013-03-27 | 烟台睿创微纳技术有限公司 | Infrared focal plane array detector |
| US9419583B2 (en) * | 2013-04-22 | 2016-08-16 | Northeastern University | Nano- and micro-electromechanical resonators |
| CN104458011A (en) * | 2013-09-13 | 2015-03-25 | 北京大学 | Full waveband infrared focal plane array based on MEMS technology |
| CN203707330U (en) * | 2013-12-03 | 2014-07-09 | 深圳光启创新技术有限公司 | Wave-transparent metamaterial |
| US9551655B2 (en) * | 2014-07-28 | 2017-01-24 | The Regents Of The University Of Michigan | Metamaterial sensor platforms for terahertz DNA sensing |
| CN104143580B (en) * | 2014-08-08 | 2016-04-20 | 电子科技大学 | A kind of terahertz wave detector and preparation method thereof |
| CN104535197A (en) * | 2014-12-29 | 2015-04-22 | 杭州士兰集成电路有限公司 | Thermopile infrared detector and manufacturing method thereof |
| CN104535198B (en) * | 2015-01-16 | 2018-07-31 | 电子科技大学 | Terahertz micro-metering bolometer based on meta-material absorber and preparation method thereof |
| US9404804B1 (en) * | 2015-04-02 | 2016-08-02 | Palo Alto Research Center Incorporated | Thermal sensor with infrared absorption membrane including metamaterial structure |
| CN106450785B (en) * | 2016-12-06 | 2020-02-18 | 电子科技大学 | Electromagnetic metamaterial structure for generating local hot spots |
| CN106692994B (en) * | 2017-01-22 | 2019-11-08 | 东南大学 | A kind of flexible Meta Materials and its preparation method and application of helical form gold nano grain composition |
-
2017
- 2017-09-30 CN CN201910250570.9A patent/CN110174175B/en active Active
- 2017-09-30 CN CN201910251900.6A patent/CN110186574B/en active Active
- 2017-09-30 CN CN201710918927.7A patent/CN107741278B/en active Active
- 2017-09-30 CN CN201910250576.6A patent/CN110160656B/en active Active
- 2017-09-30 CN CN201910250543.1A patent/CN110260981B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9322953B2 (en) * | 2010-05-18 | 2016-04-26 | Purdue Research Foundation | Energy absorbing materials |
| WO2012008551A1 (en) * | 2010-07-15 | 2012-01-19 | 旭硝子株式会社 | Process for producing metamaterial, and metamaterial |
| US20140193301A1 (en) * | 2011-06-07 | 2014-07-10 | Nanyang Technological University | Method of generating a metamaterial, and a metamaterial generated thereof |
| CN204857970U (en) * | 2015-08-20 | 2015-12-09 | 深圳光启高等理工研究院 | Terahertz is super material now |
| CN107150995A (en) * | 2017-05-11 | 2017-09-12 | 烟台睿创微纳技术股份有限公司 | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111947787A (en) * | 2020-07-06 | 2020-11-17 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN111947787B (en) * | 2020-07-06 | 2021-07-13 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113328003A (en) * | 2021-02-01 | 2021-08-31 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113328002A (en) * | 2021-02-01 | 2021-08-31 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113328003B (en) * | 2021-02-01 | 2021-12-28 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113328002B (en) * | 2021-02-01 | 2022-01-18 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113984215A (en) * | 2021-11-23 | 2022-01-28 | 天津津航技术物理研究所 | Near-zero power consumption MEMS infrared detector |
| CN113984215B (en) * | 2021-11-23 | 2023-08-11 | 天津津航技术物理研究所 | Near zero power consumption MEMS infrared detector |
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| CN110174175B (en) | 2020-06-12 |
| CN110260981B (en) | 2020-06-12 |
| CN110160656B (en) | 2020-07-03 |
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| CN110260981A (en) | 2019-09-20 |
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| CN107741278B (en) | 2019-09-10 |
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