CN110160656B - Uncooled infrared imaging sensor based on super surface - Google Patents
Uncooled infrared imaging sensor based on super surface Download PDFInfo
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- CN110160656B CN110160656B CN201910250576.6A CN201910250576A CN110160656B CN 110160656 B CN110160656 B CN 110160656B CN 201910250576 A CN201910250576 A CN 201910250576A CN 110160656 B CN110160656 B CN 110160656B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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Abstract
The invention relates to a super-surface-based uncooled infrared imaging sensor which comprises a double-layer uncooled infrared detector, wherein the double-layer uncooled infrared detector comprises a semiconductor substrate and a detector body, the detector body comprises a first suspended structure and a second suspended structure, the first suspended structure comprises a metal reflecting layer, an insulating medium layer, a metal electrode layer, an electrode protection layer, a first supporting layer, a thermosensitive protection layer and a thermosensitive layer, the second suspended structure comprises a metamaterial supporting layer and a metamaterial supporting protection layer, a metamaterial structure is arranged on the metamaterial supporting protection layer, the metamaterial structure adopts NiCr or/and Al, the thickness of the metamaterial structure is 12-30 nm, the preparation process is simple, the metamaterial structure is compatible with a CMOS (complementary metal oxide semiconductor) process, and the functions of multi-color detection, wide-band detection, narrow-spectrum detection and the like can be realized.
Description
The application is a divisional application with application number 201710918927.7, application date 2017.09.30 and invention name 'a super surface based non-refrigeration infrared imaging sensor and a preparation method thereof'.
Technical Field
The invention relates to an uncooled infrared imaging sensor based on a super surface, and belongs to the field of uncooled infrared detectors.
Background
Uncooled infrared detectors (uncooled infrared bolometers) are widely used in civil fields such as fire fighting, automobile assistance, forest fire prevention, field detection, environmental protection, etc., in addition to military fields.
Electromagnetic Metamaterial (Metamaterial), referred to as Metamaterial for short, refers to a kind of artificial composite structure or composite material having extraordinary electromagnetic properties that natural materials do not have; in 2001, Walser first proposed the concept of electromagnetic metamaterials, and the metamaterials can be used to realize arbitrary 'cutting' of electromagnetic waves and light wave properties, so that special devices such as perfect lenses, invisible cloaks, perfect absorption of electromagnetic waves and the like can be obtained; nowadays, metamaterials have become a focus of common attention for theoretical basis research and technical application research. According to the effective medium theory, the characteristics of the metamaterial can be regulated and controlled through the structural ordered design of key physical dimensions; therefore, by adjusting the physical size and material parameters, the metamaterial can be coupled with the electromagnetic component of the incident electromagnetic wave, so that most (even 100%) of the incident electromagnetic wave of a specific frequency band is absorbed, and a special metamaterial 'perfect absorber' is obtained; since the first experiment of N.I.Landy et al verifies that the metamaterial is perfect, the metamaterial absorber develops rapidly, and the working band gradually extends from a radio frequency band to a THz band, namely an infrared band or even a visible light band.
In order to realize the function of a wide band, a traditional infrared detector generally adopts a method of adjusting the height of a resonant cavity (patent CN103759838A), and the absorption of a specific band is enhanced through the adjustment of the height, so as to realize the absorption of the wide band.
When the traditional infrared detector realizes the polarization function, an external polaroid is generally combined with an optical lens. The method not only increases the design difficulty of the light path, but also increases the cost of the product;
when the traditional infrared detector realizes the multi-color function, a plurality of resonant cavities with different heights are generally used, and a specific absorption spectrum section is increased by adjusting the heights of the resonant cavities. The method greatly increases the process steps, improves the difficulty of process realization, and is very easy to cause that the product can not reach the ideal height in the preparation process and can not realize the absorption of the target wave band because the height control of different resonant cavities is very difficult, thereby causing the failure rate of the product to be improved.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides the novel super-surface uncooled infrared imaging sensor which is low in additional heat capacity, simple in manufacturing process and strong in target detection capability.
The technical scheme for solving the technical problems is as follows: an uncooled infrared imaging sensor based on a super surface comprises a double-layer uncooled infrared detector, the double-layer uncooled infrared detector comprises a semiconductor substrate containing a reading circuit and a detector body with a micro-bridge supporting structure, the detector body comprises a first layer of suspended structure and a second layer of suspended structure, the second layer of suspended structure is arranged on the first layer of suspended structure, the first layer of suspended structure comprises a metal reflecting layer, an insulating medium layer, a metal electrode layer, an electrode protective layer, a first supporting layer, a thermosensitive protective layer and a thermosensitive layer, the second layer of suspended structure comprises a metamaterial supporting layer and a metamaterial supporting protection layer arranged on the metamaterial supporting layer, and a metamaterial structure is arranged on the metamaterial support protection layer, the metamaterial structure is NiCr or/and Al, and the thickness of the metamaterial structure is 12-30 nm.
The sensor has the beneficial effects that:
(1) realized that metamaterial structure and double-deck uncooled infrared detector carry out monolithic integration, can be according to actual need, the customization project organization: since the absorption of electromagnetic waves by the metamaterial is mainly based on the combination of physical structure and material parameters, different structures can be designed and different materials can be used to combine with the structure, so that the absorption structure with multiple functions, such as functions of wide band, polarization, multiple colors, narrow spectrum and the like, can be realized. The structure is fully compatible with the traditional CMOS process without increasing the process difficulty. The structure and the infrared detector are a complete whole, so that the process flow is greatly simplified, and the production efficiency is improved;
(2) the metamaterial structure is combined with the infrared detector, the metamaterial absorbs electromagnetic waves to enhance electromagnetic wave signals absorbed by the infrared detector, the two signals are completely superposed, namely, the strength of the signals can be increased through the combination of the metamaterial and the infrared detector, the signals can be processed through a reading circuit without adding extra algorithms and circuits, a signal processing module at the rear end is simplified, and labor and cost are saved.
(3) The double-layer uncooled infrared detector combined with the metamaterial has low additional heat capacity, and can realize the monolithic integration of the multifunctional infrared detector, so that the target detection capability of the detector can be improved.
Furthermore, the semiconductor substrate is provided with the metal reflecting layer and the insulating medium layer, and the metal reflecting layer comprises a plurality of metal blocks;
the insulating medium layer is provided with the first supporting layer, the first supporting layer is provided with a first anchor point hole and a second anchor point hole, the bottoms of the first anchor point hole and the second anchor point hole are respectively provided with a first through hole and a second through hole, the first through hole and the second through hole are respectively terminated at the metal block, the first supporting layer, the first anchor point hole and the second anchor point hole are internally provided with a metal electrode layer, the metal electrode layer comprises a metal electrode arranged on the first supporting layer and a metal connecting line arranged in the first anchor point hole and the second anchor point hole, the metal electrode layer is provided with an electrode protecting layer, the electrode protecting layer is provided with a contact hole, the contact hole is terminated at the metal electrode, the electrode protecting layer is provided with a thermosensitive layer, and the thermosensitive layer is provided with a thermosensitive protecting layer;
the heat-sensitive protective layer is provided with the second suspended structure, the metamaterial supporting layer is provided with a third anchor point hole and a fourth anchor point hole, the cross sections of the third anchor point hole and the fourth anchor point hole are trapezoidal, and the lower ends of the third anchor point hole and the fourth anchor point hole are in contact with the heat-sensitive protective layer.
The beneficial effect of adopting the further technical scheme is that: the design of the second layer structure of the double-layer structure is not influenced by the first layer structure, the designed structure is diversified, and the thermosensitive effect of the thermosensitive layer of the first layer structure is not influenced.
Further, the thickness of the insulating medium layer silicon nitride film or the silicon dioxide film is 0.02-0.30 μm, the first supporting layer and the metamaterial supporting layer are both low-stress silicon nitride films, the thickness of the first supporting layer and the metamaterial supporting layer is 0.10-0.30 μm, the metal electrode layer is metal aluminum or tungsten, and the thermosensitive layer is vanadium oxide, manganese oxide, copper oxide, molybdenum oxide, titanium oxide or polysilicon and the like.
Further, the metamaterial structure includes that the rectangle framework is in with the setting the rectangle center plate of the middle part of rectangle framework, the rectangle framework with be equipped with vertically and horizontally staggered's horizontal muscle and perpendicular muscle between the rectangle center plate, form a plurality of rectangle fretworks between rectangle framework, horizontal muscle and the perpendicular muscle, the area of rectangle center plate equals four adjacent rectangle fretworks and the horizontal muscle between them and the area sum of perpendicular muscle, the rectangle center plate does not include the setting at its horizontal muscle and perpendicular muscle all around, the thickness of rectangle framework, horizontal muscle and perpendicular muscle is 12nm, and the material is NiCr.
The beneficial effect of adopting the further technical scheme is that: can realize the absorption of wide wave band, and can reach high absorption rate in the wavelength of 3-19 μm.
Further, the outer contour of the metamaterial structure is rectangular, a rectangular hollow is arranged at the center of the metamaterial structure, the outer contour is provided with a horizontal center line and a vertical center line, a thin strip which is bent back and forth to form a closed-loop structure is arranged between the rectangular hollow and the outer contour, the closed-loop structure formed by the thin strip is symmetrical about the horizontal center line and the vertical center line, the bent part of the closed-loop structure is bent at a right angle, the thin strip is made of NiCr, the thickness of the thin strip is 20nm, and the width of the thin strip is 0.5-5 microns.
The beneficial effects of the further technical scheme are that: high absorptance of 6 μm, 10.5 μm and 19 μm can be realized, and absorptance of the remaining wavelength bands is relatively low, and the use of this structure can realize the effect of a multicolor type infrared detector.
Furthermore, four corners of the rectangular frame body are provided with chamfers, and the area of the rectangular hollow close to the chamfers is smaller than the area of the rectangular hollow far away from the chamfers.
Further, the metamaterial structure comprises a rectangular outline formed by a flat belt, wherein the center of each side of the rectangular outline is provided with an inward U-shaped bend, the flat belt is made of NiCr, the thickness of the flat belt is 20nm, and the width of the flat belt is 0.5-5 μm.
The beneficial effect of adopting the further technical scheme is that: to realize the function of a multicolor type infrared detector.
Furthermore, the outline of the metamaterial structure is rectangular, a cross-shaped hollow structure is arranged at the center of the metamaterial structure, the metamaterial structure is made of NiCr, the thickness of the metamaterial structure is 20nm, and the width of a gap of the cross-shaped hollow structure is 0.5-5 microns.
The beneficial effect of adopting the further technical scheme is that: the structure can realize high absorption rate of an infrared band of 14-17 mu m, realize absorption of a specific spectrum band, adjust the absorption spectrum band by adjusting the size of a gap, the size of the structure and the thickness of a film, and obtain a target spectrum band by controlling the factors.
Furthermore, the metamaterial structure comprises a pair of rectangular frames which are symmetrically arranged, openings are arranged on the adjacent sides of the two rectangular frames, a connecting belt is arranged between the two rectangular frames, and the connecting belt penetrates through the openings and is perpendicular to the side edges of the two rectangular frames.
The beneficial effect of adopting the further technical scheme is that: absorption in a particular spectral band can be achieved.
Furthermore, the metamaterial structure is a concave structure, the material is Al, and the thickness is 30 nm.
The beneficial effect of adopting the further technical scheme is that: a polarizing effect can be achieved.
Further, the metamaterial structure comprises four regions which are arranged in a matrix and are respectively a first region, a second region, a third region and a fourth region, a first metamaterial structure, a second metamaterial structure, a third metamaterial structure and a fourth metamaterial structure are respectively arranged in the four regions, the shapes of the first metamaterial structure and the third metamaterial structure are the same, and the shapes of the second metamaterial structure and the fourth metamaterial structure are the same.
The beneficial effect of adopting the further technical scheme is that: through set up the metamaterial structure of different shapes and thickness in four regions, because the interact between the structure to and the coupling effect of electromagnetic field between different structures is different, can make the sensor not only can realize the stack of each function, can make the effect reinforcing of each function moreover, increase the whole absorptivity of sensor promptly.
Further, the first metamaterial structure comprises a rectangular frame body and a rectangular central plate arranged in the middle of the rectangular frame body, criss-cross transverse ribs and vertical ribs are arranged between the rectangular frame body and the rectangular central plate, a plurality of rectangular hollows are formed among the rectangular frame body, the transverse ribs and the vertical ribs, the area of the rectangular central plate is equal to the sum of the areas of four adjacent rectangular hollows and the transverse ribs and the vertical ribs between the four rectangular hollows, the thickness of the rectangular frame body, the thickness of the transverse ribs and the thickness of the vertical ribs are 12nm, and the material is NiCr; the second metamaterial structure comprises a plurality of vertical slices which are sequentially arranged, wherein the vertical slices are made of Al, and the thickness of the vertical slices is 30 nm.
The beneficial effects of the further technical scheme are that: the polarization function and the absorption of wide wave band can be realized simultaneously.
Further, the first metamaterial structure comprises a rectangular frame body and a rectangular central plate arranged in the middle of the rectangular frame body, criss-cross transverse ribs and vertical ribs are arranged between the rectangular frame body and the rectangular central plate, a plurality of rectangular hollows are formed among the rectangular frame body, the transverse ribs and the vertical ribs, the area of the rectangular central plate is equal to the sum of the areas of four adjacent rectangular hollows and the transverse ribs and the vertical ribs between the four rectangular hollows, the thickness of the rectangular frame body, the thickness of the transverse ribs and the thickness of the vertical ribs are 12nm, and the material is NiCr; the second metamaterial structure is a concave structure, the material is Al, and the thickness is 30 nm.
The beneficial effect of adopting the further technical scheme is that: the polarization function and the absorption of wide wave band can be realized simultaneously.
The invention also relates to a preparation method of the non-refrigeration infrared imaging sensor based on the super surface, which comprises the following steps:
step 1, providing a double-layer uncooled infrared detector without sacrificial layer release, which comprises a semiconductor substrate containing a reading circuit and a detector body with a microbridge supporting structure, wherein the detector body comprises a first layer of suspended structure and a second layer of suspended structure, the first layer of suspended structure comprises a metal block, an insulating medium layer, a first sacrificial layer, a metal electrode layer, an electrode protection layer, a first supporting layer, a heat-sensitive protective layer and a heat-sensitive layer, and the second layer of suspended structure comprises a second sacrificial layer, a metamaterial supporting layer and a metamaterial supporting and protecting layer arranged on the metamaterial supporting layer;
step 2: preparing a metamaterial structure on a metamaterial supporting protection layer, and preparing the metamaterial structure on the metamaterial supporting protection layer, wherein firstly, a metamaterial layer is deposited on the metamaterial supporting protection layer, then, photoresist is coated on the surface of the metamaterial layer in a spinning mode, and the metamaterial structure is obtained on the metamaterial supporting protection layer through a photoetching method, wherein the metamaterial layer is NiCr and/or Al, and the thickness of the metamaterial layer is 12-30 nm;
and step 3: and releasing the structure, and releasing the first sacrificial layer and the second sacrificial layer to form the super-surface-based uncooled infrared imaging sensor.
The preparation method has the beneficial effects that:
(1) the design structure can be customized according to actual needs: since the absorption of electromagnetic waves by the metamaterial is mainly based on the combination of physical structure and material parameters, different structures can be designed and different materials can be used to combine with the structure, so that the absorption structure with multiple functions, such as functions of wide band, polarization, multiple colors, narrow spectrum and the like, can be realized. The structure is completely compatible with the traditional CMOS process without increasing the process difficulty, and the structure and the infrared detector are a complete whole, thereby greatly simplifying the process flow and improving the production efficiency;
(2) the metamaterial structure is combined with the infrared detector, the metamaterial absorbs electromagnetic waves to enhance electromagnetic wave signals absorbed by the infrared detector, and the two signals are completely superposed, namely, the strength of the signals can be increased by combining the metamaterial with the infrared detector, and the signals can be processed through a reading circuit without adding extra algorithms and circuits, so that a signal processing module at the rear end is simplified, and labor and cost are saved;
(3) the infrared detector combined with the metamaterial has low additional heat capacity, and can realize the monolithic integration of the multifunctional infrared detector, so that the target detection capability of the detector can be improved.
Further, the preparation method of the double-layer uncooled infrared detector without sacrificial layer release in the step 1 is as follows:
1) manufacturing a metal reflecting layer on a semiconductor substrate containing a reading circuit, and carrying out patterning processing on the metal reflecting layer, wherein a plurality of metal blocks are formed on the patterned metal layer; the metal block is electrically connected with a readout circuit on the semiconductor substrate; depositing an insulating medium layer on the patterned metal layer;
2) depositing a first sacrificial layer on the insulating medium layer, carrying out graphical treatment on the first sacrificial layer to form a first anchor point hole and a second anchor point hole, wherein the cross sections of the first anchor point hole and the second anchor point hole are trapezoidal, then depositing a first supporting layer on the first sacrificial layer, and carrying out photoetching or etching on the first supporting layer in the first anchor point hole and the second anchor point hole until the first supporting layer is contacted with the metal block to form a first through hole and a second through hole;
3) depositing a metal electrode layer on the first support layer, carrying out patterning treatment on the metal electrode layer to form a metal electrode and a metal connecting line, then depositing an electrode protection layer on the metal electrode layer subjected to patterning treatment, carrying out patterning treatment on the electrode protection layer, and photoetching or etching the electrode protection layer until the electrode protection layer contacts the metal electrode to form a first contact hole and a second contact hole;
4) depositing a heat-sensitive layer on the electrode protection layer after the patterning treatment, performing patterning treatment on the heat-sensitive layer, wherein the heat-sensitive layer after the patterning treatment is only on the bridge deck, and then depositing a heat-sensitive protection layer on the heat-sensitive layer after the patterning treatment;
5) depositing a second sacrificial layer on the thermosensitive protection layer, performing graphical processing on the second sacrificial layer to form a third anchor point hole and a fourth anchor point hole, wherein the cross sections of the third anchor point hole and the fourth anchor point hole are in a trapezoidal structure, and then sequentially depositing a metamaterial supporting layer and a metamaterial supporting protection layer on the second sacrificial layer.
Drawings
FIG. 1 is a schematic view showing a state in which a first through-hole and a second through-hole are formed in the present invention;
FIG. 2 is a cross-sectional view of a first layer of suspended structures without sacrificial layer release according to the present invention;
FIG. 3 is a cross-sectional view of a first layer of floating structure and a second layer of floating structure without sacrificial layer release according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a sensor according to the present invention;
FIG. 5 is a schematic diagram of a metamaterial structure according to embodiment 1 of the present invention;
FIG. 6 is an infrared absorption spectrum of example 1 of the present invention (wavelength on the abscissa and absorbance on the ordinate);
FIG. 7 is a schematic diagram of a metamaterial structure according to embodiment 2 of the present invention;
FIG. 8 is a graph of an infrared absorption spectrum of example 3 of the present invention (wavelength on the abscissa and absorbance on the ordinate);
FIG. 9 is a schematic diagram of a metamaterial structure according to embodiment 3 of the present invention;
FIG. 10 is a schematic diagram of a metamaterial structure according to embodiment 4 of the present invention;
FIG. 11 is a graph of an infrared absorption spectrum of example 5 of the present invention (wavelength on the abscissa and absorbance on the ordinate);
FIG. 12 is a schematic diagram of a metamaterial structure according to embodiment 5 of the present invention;
FIG. 13 is a schematic diagram of a metamaterial structure according to embodiment 6 of the present invention;
FIG. 14 is a schematic diagram of a metamaterial structure according to embodiment 7 of the present invention;
FIG. 15 is a schematic diagram of a metamaterial structure according to example 8 of the present invention;
in the drawings, the parts names represented by the respective reference numerals are listed as follows: 1. the structure comprises a semiconductor substrate, 2 parts of a metal reflection layer, 2-1 parts of a metal block, 3 parts of an insulating medium layer, 4 parts of a first sacrificial layer, 4-1 parts of a first anchor point hole, 4-2 parts of a second anchor point hole, 5 parts of a first support layer, 4-1 parts of a first through hole, 4-2 parts of a second through hole, 6 parts of a metal electrode layer, 6-1 parts of a metal connecting line, 6-2 parts of a metal electrode, 7 parts of an electrode protection layer, 8 parts of a thermosensitive layer, 9 parts of a thermosensitive protection layer, 10 parts of a second sacrificial layer, 10-1 parts of a third anchor point hole, 10-2 parts of a fourth anchor point hole, 11 parts of a metamaterial support layer, 12 parts of a metamaterial support protection layer, 13 parts of a metamaterial structure, 13-1 parts of a vertical rib, 13-2 parts of a transverse rib, 13-3 parts of a rectangular hollow part, 13-4 parts of a rectangular central plate, 13-5 parts of, 13-6 parts of thin strip, 13-7 parts of rectangular hollow, 13-8 parts of flat strip, 13-9 parts of U-shaped bent, 13-10 parts of cross hollow structure, 13-11 parts of connecting strip, 13-12 parts of rectangular frame and vertical thin sheet.
Detailed Description
The principles and features of an ultra-surface uncooled infrared imaging sensor according to the present invention are described in detail below with reference to the drawings, which are provided for illustration and not for limiting the scope of the invention.
Example 1
As shown in fig. 1-6, an uncooled infrared imaging sensor based on a super surface includes a double-layer uncooled infrared detector, which includes a semiconductor substrate 1 including a readout circuit and a detector body with a microbridge supporting structure, the detector body includes a first suspended structure and a second suspended structure, the second suspended structure is disposed on the first suspended structure, the first suspended structure includes a metal reflective layer 2, an insulating dielectric layer 3, a metal electrode layer 6, an electrode protection layer 7, a first supporting layer 5, a thermosensitive protection layer 9 and a thermosensitive layer 8, the second suspended structure includes a metamaterial supporting layer 11 and a metamaterial supporting protection layer 12 disposed on the metamaterial supporting layer 11, a metamaterial structure 13 is disposed on the metamaterial supporting protection layer 12, the metamaterial structure 13 is made of NiCr or/and Al, the thickness of the film is 12-30 nm.
The semiconductor substrate 1 is provided with the metal reflecting layer 2 and an insulating medium layer 3, and the metal reflecting layer 2 comprises a plurality of metal blocks 2-1;
the insulating medium layer 3 is provided with a first supporting layer 5, the first supporting layer 5 is provided with a first anchor point hole 4-1 and a second anchor point hole 4-2, the bottoms of the first anchor point hole 4-1 and the second anchor point hole 4-2 are respectively provided with a first through hole 5-1 and a second through hole 5-2, the first through hole 5-1 and the second through hole 5-2 are respectively terminated at the metal block 2-1, the first supporting layer 5, the first anchor point hole 4-1 and the second anchor point hole 4-2 are internally provided with a metal electrode layer 6, the metal electrode layer 6 comprises a metal electrode 6-2 arranged on the first supporting layer 5 and a metal connecting wire 6-1 arranged in the first anchor point hole 4-1 and the second anchor point hole 4-2, the metal electrode layer 6 is provided with an electrode protection layer 7, a contact hole is formed in the electrode protection layer 7, the contact hole is terminated at the metal electrode 6-2, the thermosensitive layer 8 is arranged on the electrode protection layer 7, and the thermosensitive protection layer 9 is arranged on the thermosensitive layer 8;
the second layer of suspended structure is arranged on the thermosensitive protection layer 9, a third anchor point hole 10-1 and a fourth anchor point hole 10-2 are arranged on the metamaterial supporting layer 11, the cross sections of the third anchor point hole 10-1 and the fourth anchor point hole 10-2 are trapezoidal, and the lower end of the third anchor point hole is in contact with the thermosensitive protection layer 9;
the metamaterial structure 13 is a rectangular central plate 13-4 with a rectangular frame body arranged in the middle of the rectangular frame body, criss-cross transverse ribs 13-2 and vertical ribs 13-1 are arranged between the rectangular frame body and the rectangular central plate 13-4, a plurality of rectangular hollow parts 13-3 are formed among the rectangular frame body, the transverse ribs 13-2 and the vertical ribs 13-1, the rectangular central plate 13-4 is arranged in the middle of the rectangular frame body, the area of the rectangular central plate 13-4 is the sum of the areas of the four adjacent rectangular hollow parts 13-3 and the transverse ribs and the vertical ribs between the rectangular hollow parts 13-3, the thickness of the rectangular frame body, the transverse ribs 13-2 and the vertical ribs 13-1 is 12nm, and the material is NiCr.
Example 2
The difference from the embodiment 1 is that, as shown in fig. 7, the outer contour of the metamaterial structure 13 is rectangular, a rectangular hollow 13-6 is arranged at the center, a horizontal center line and a vertical center line are arranged on the outer contour, a thin strip 13-5 bent back and forth to form a closed-loop structure is arranged between the rectangular hollow 13-6 and the outer contour, the closed-loop structure formed by the thin strip 13-5 is respectively symmetrical about the horizontal center line and the vertical center line, the bent portion of the closed-loop structure is bent at a right angle, the thin strip is made of NiCr, and is 20nm in thickness and 0.5 μm-5 μm in width.
Example 3
The difference from the embodiment 1 is that, as shown in fig. 8-9, the metamaterial structure 13 comprises a rectangular profile formed by a flat belt 13-7, the center of each side of the rectangular profile is provided with an inward U-shaped bend 13-8, the material of the flat belt 13-7 is NiCr, the thickness is 20nm, and the width is 0.5 μm-5 μm.
Example 4
The difference from the embodiment 1 is that, as shown in fig. 10, the outline of the metamaterial structure is rectangular, a cross-shaped hollow structure 13-9 is arranged at the center, the material of the metamaterial structure 13 is NiCr, the thickness is 20nm, and the gap width of the cross-shaped hollow structure 13-9 is 0.5 μm-5 μm.
Example 5
The difference from the embodiment 1 is that, as shown in fig. 11-12, the metamaterial structure 13 includes a pair of rectangular frames 13-11 symmetrically disposed, openings are disposed on adjacent sides of the two rectangular frames 13-11, a connection band 13-10 is disposed between the two rectangular frames 13-11, and the connection band 13-10 passes through the openings and is perpendicular to the sides of the two rectangular frames 13-11.
Example 6
The difference from the embodiment 1 is that, as shown in fig. 13, the metamaterial structure 13 is a concave structure, the material is Al, and the thickness is 30 nm.
Example 7
The difference from embodiment 1 is that, as shown in fig. 14, the metamaterial structure 13 includes four regions arranged in a matrix, which are a first region, a second region, a third region, and a fourth region, a first metamaterial structure, a second metamaterial structure, a third metamaterial structure, and a fourth metamaterial structure are respectively disposed in the four regions, the first metamaterial structure and the third metamaterial structure have the same shape, and the second metamaterial structure and the fourth metamaterial structure have the same shape;
the first metamaterial structure and the third metamaterial structure comprise rectangular frames and rectangular central plates 13-4, criss-cross transverse ribs 13-2 and vertical ribs 13-1 are arranged between the rectangular frames and the rectangular central plates 13-4, a plurality of rectangular hollows 13-3 are formed among the rectangular frames, the transverse ribs 13-2 and the vertical ribs 13-1, the rectangular central plates 13-4 are arranged in the middle of the rectangular frames, the area of each rectangular central plate 13-4 is the sum of the areas of the four adjacent rectangular hollows 13-3 and the transverse ribs 13-2 and the vertical ribs 13-1 between the four adjacent rectangular hollows 13-3, the thickness of each rectangular frame, the thickness of each transverse rib 13-2 and the thickness of each vertical rib 13-1 are 12nm, and the materials are NiCr;
the second metamaterial structure and the fourth metamaterial structure comprise a plurality of vertical slices 13-12 which are sequentially arranged, wherein the vertical slices 13-12 are made of Al, and the thickness of the vertical slices is 30 nm.
Example 8
The first metamaterial structure and the third metamaterial structure are different from the first metamaterial structure and the second metamaterial structure in embodiment 7 in that the first metamaterial structure and the third metamaterial structure comprise 13-3 and rectangular central plates 13-4, criss-cross transverse ribs 13-2 and vertical ribs 13-1 are arranged between the rectangular frame body and the rectangular central plates 13-4, a plurality of rectangular hollow parts 13-3 are formed among the rectangular frame body, the transverse ribs 13-2 and the vertical ribs 13-1, the rectangular central plates 13-4 are arranged in the middle of the rectangular frame body, the area of each rectangular central plate 13-4 is the sum of the areas of the four adjacent rectangular hollow parts 13-3 and the transverse ribs 13-2 and the vertical ribs 13-1 between the adjacent rectangular hollow parts, the thickness of each rectangular frame body, the transverse ribs 13-2 and the vertical ribs 13-1 is 12nm, and the materials are NiCr;
the second metamaterial structure and the fourth metamaterial structure are of concave structures, the material is Al, and the thickness is 30 nm.
The invention also relates to a preparation method based on the novel super-surface uncooled infrared imaging sensor, which comprises the following specific steps as shown in figures 1-4:
step 1, providing a double-layer uncooled infrared detector without sacrificial layer release, which comprises a semiconductor substrate 1 comprising a reading circuit and a detector body with a micro-bridge supporting structure, wherein the detector body comprises a first layer of suspended structure and a second layer of suspended structure, the first layer of suspended structure comprises a metal block 2-1, an insulating medium layer 3, a first sacrificial layer 4, a metal electrode layer 6, an electrode protection layer 7, a first supporting layer 5, a thermosensitive protection layer 9 and a thermosensitive layer 8, and the second layer of suspended structure comprises a second sacrificial layer 10, a metamaterial supporting layer 11 and a metamaterial supporting and protecting layer 12 arranged on the metamaterial supporting layer 11;
the preparation method of the double-layer uncooled infrared detector without sacrificial layer release comprises the following steps:
1) manufacturing a metal reflecting layer 2 on a semiconductor substrate 1 containing a reading circuit, and carrying out patterning processing on the metal reflecting layer 2, wherein a plurality of metal blocks 2-1 are formed on the patterned metal layer; the metal block 2-1 is electrically connected with a readout circuit on the semiconductor substrate 1; depositing an insulating medium layer 3 on the patterned metal layer;
2) depositing a first sacrificial layer 4 on the insulating medium layer 3, performing patterning treatment on the first sacrificial layer 4 to form a first anchor point hole 4-1 and a second anchor point hole 4-2, wherein the cross sections of the first anchor point hole 4-1 and the second anchor point hole 4-2 are trapezoidal, then depositing a first support layer 5 on the first sacrificial layer 4, and performing photoetching or etching on the first support layer 5 in the first anchor point hole 4-1 and the second anchor point hole 4-2 until the first support layer contacts the metal block 2-1 to form a first through hole 5-1 and a second through hole 5-2, as shown in fig. 1;
3) depositing a metal electrode layer 6 on the first support layer 5, performing patterning treatment on the metal electrode layer 6 to form a metal electrode 6-2 and a metal connecting line 6-1, then depositing an electrode protection layer 7 on the metal electrode layer 6 after the patterning treatment, performing patterning treatment on the electrode protection layer 7, and photoetching or etching the electrode protection layer 7 until the electrode protection layer contacts the metal electrode 6 to form a first contact hole and a second contact hole;
4) depositing a heat-sensitive layer 8 on the patterned electrode protection layer 7, performing patterning on the heat-sensitive layer 8, wherein the patterned heat-sensitive layer 8 is only on the bridge deck, and then depositing a heat-sensitive protection layer 9 on the patterned heat-sensitive layer 8, as shown in fig. 2;
5) depositing a second sacrificial layer 10 on the heat-sensitive protective layer 9, performing patterning processing on the second sacrificial layer 10 to form a third anchor point hole 10-1 and a fourth anchor point hole 10-2, wherein the cross sections of the third anchor point hole 10-1 and the fourth anchor point hole 10-2 are in a trapezoid structure, and then sequentially depositing a metamaterial support layer 11 and a metamaterial support protective layer 12 on the second sacrificial layer 10 as shown in fig. 3;
step 2: preparing a metamaterial structure on a metamaterial supporting protection layer, preparing the metamaterial structure on the metamaterial supporting protection layer, firstly, depositing a metamaterial layer on the metamaterial supporting protection layer, then, spin-coating photoresist on the surface of the metamaterial layer, obtaining the metamaterial structure on the metamaterial supporting protection layer by a photoetching method, wherein the metamaterial layer is NiCr and/or Al, the thickness of the metamaterial layer is 12-30 nm, different metamaterial structures can be formed by customizing and designing the structure according to actual needs, and various functional absorption structures such as functions of wide band, polarization, multicolor, narrow spectrum and the like are realized;
and step 3: and releasing the structure, namely releasing the first sacrificial layer and the second sacrificial layer 10 to form the super-surface-based uncooled infrared imaging sensor, as shown in figure 4.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (1)
1. An uncooled infrared imaging sensor based on a super surface is characterized by comprising a double-layer uncooled infrared detector, wherein the double-layer uncooled infrared detector comprises a semiconductor substrate containing a reading circuit and a detector body with a micro-bridge supporting structure, the detector body comprises a first layer of suspended structure and a second layer of suspended structure, the second layer of suspended structure is arranged on the first layer of suspended structure, the first layer of suspended structure comprises a metal reflecting layer, an insulating medium layer, a metal electrode layer, an electrode protecting layer, a first supporting layer, a thermosensitive protecting layer and a thermosensitive layer, the second layer of suspended structure comprises a metamaterial supporting layer and a metamaterial supporting and protecting layer arranged on the metamaterial supporting layer, and a metamaterial structure is arranged on the metamaterial supporting layer;
the semiconductor substrate is provided with the metal reflecting layer and the insulating medium layer, and the metal reflecting layer comprises a plurality of metal blocks;
the insulating medium layer is provided with the first supporting layer, the first supporting layer is provided with a first anchor point hole and a second anchor point hole, the bottoms of the first anchor point hole and the second anchor point hole are respectively provided with a first through hole and a second through hole, the first through hole and the second through hole are respectively terminated at the metal block, the first supporting layer, the first anchor point hole and the second anchor point hole are internally provided with a metal electrode layer, the metal electrode layer comprises a metal electrode arranged on the first supporting layer and a metal connecting line arranged in the first anchor point hole and the second anchor point hole, the metal electrode layer is provided with an electrode protecting layer, the electrode protecting layer is provided with a contact hole, the contact hole is terminated at the metal electrode, the electrode protecting layer is provided with a thermosensitive layer, and the thermosensitive layer is provided with a thermosensitive protecting layer;
the heat-sensitive protective layer is provided with the second layer of suspended structure, the metamaterial supporting layer is provided with a third anchor point hole and a fourth anchor point hole, the cross sections of the third anchor point hole and the fourth anchor point hole are trapezoidal, and the lower ends of the third anchor point hole and the fourth anchor point hole are in contact with the heat-sensitive protective layer;
the metamaterial structure comprises a rectangular outline formed by a flat belt, wherein an inward U-shaped bend is arranged at the center of each side of the rectangular outline, the flat belt is made of NiCr, the thickness of the flat belt is 20nm, and the width of the flat belt is 0.5-5 mu m.
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| CN108507685B (en) * | 2018-03-13 | 2020-11-03 | 烟台睿创微纳技术股份有限公司 | Graphene detector and preparation method thereof |
| CN109253803B (en) * | 2018-08-29 | 2021-03-02 | 北方广微科技有限公司 | Non-refrigeration infrared polarization detector pixel structure and preparation method |
| CN109459148B (en) * | 2018-11-12 | 2020-09-08 | 中国科学院长春光学精密机械与物理研究所 | Polarized infrared sensor based on super surface FBAR resonance frequency temperature drift characteristic |
| CN109813448B (en) * | 2019-01-31 | 2021-11-05 | 中国科学院长春光学精密机械与物理研究所 | Double-spectrum super-surface integrated uncooled infrared detector and manufacturing method thereof |
| CN110118604B (en) * | 2019-05-30 | 2020-03-13 | 中国科学院长春光学精密机械与物理研究所 | Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof |
| CN110967119B (en) * | 2019-11-18 | 2020-10-27 | 中国空间技术研究院 | Ultra-wide waveband uncooled infrared detector with single-layer structure and preparation method thereof |
| CN111947787B (en) * | 2020-07-06 | 2021-07-13 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN111896122B (en) * | 2020-08-11 | 2021-11-16 | 烟台睿创微纳技术股份有限公司 | Polarization non-refrigeration infrared detector and preparation method thereof |
| CN111947789B (en) * | 2020-08-11 | 2021-12-21 | 烟台睿创微纳技术股份有限公司 | Double-color polarization non-refrigeration infrared detector and manufacturing method thereof |
| CN113328002B (en) * | 2021-02-01 | 2022-01-18 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113328003B (en) * | 2021-02-01 | 2021-12-28 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
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| CN113447146B (en) * | 2021-06-25 | 2022-12-02 | 北京北方高业科技有限公司 | Step type infrared detector |
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| CN110160656A (en) | 2019-08-23 |
| CN110260981A (en) | 2019-09-20 |
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| CN110260981B (en) | 2020-06-12 |
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