CN117157733A - Method for manufacturing semiconductor device and dicing die-bonding integrated film - Google Patents

Method for manufacturing semiconductor device and dicing die-bonding integrated film Download PDF

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Publication number
CN117157733A
CN117157733A CN202280027031.9A CN202280027031A CN117157733A CN 117157733 A CN117157733 A CN 117157733A CN 202280027031 A CN202280027031 A CN 202280027031A CN 117157733 A CN117157733 A CN 117157733A
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China
Prior art keywords
adhesive layer
pressure
sensitive adhesive
meth
film
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CN202280027031.9A
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Chinese (zh)
Inventor
菅原丈博
木村尚弘
大久保惠介
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Lishennoco Co ltd
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Lishennoco Co ltd
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Publication of CN117157733A publication Critical patent/CN117157733A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)

Abstract

The invention discloses a dicing die bonding integrated film. The dicing die bonding integrated film includes: a dicing film comprising a substrate layer and a pressure-sensitive adhesive layer composed of an ultraviolet-curable pressure-sensitive adhesive provided on the substrate layer; and an adhesive layer disposed on the pressure-sensitive adhesive layer of the dicing film. The pressure-sensitive adhesive layer has an adhesive force of 15N/25mm or more with respect to the adhesive layer measured at a temperature of 23 ℃ under conditions of a peeling angle of 30 DEG and a peeling speed of 600 mm/min.

Description

Method for manufacturing semiconductor device and dicing die-bonding integrated film
Technical Field
The present invention relates to a method for manufacturing a semiconductor device and a dicing die-bonding integrated film.
Background
The semiconductor device is manufactured through the following steps. First, a dicing step is performed in a state where a dicing pressure-sensitive adhesive film is attached to a wafer. Then, an expanding process, a picking process, a die bonding process, and the like are performed.
In the manufacturing process of a semiconductor device, a film called a dicing die-bonding integrated film is used. The film has a structure in which a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer are laminated in this order, and is used, for example, in the following manner. First, the adhesive layer side surface is attached to a wafer, and the wafer is diced in a state where the wafer is fixed with a dicing ring. Thereby, the wafer is singulated into a plurality of chips. Then, after the adhesive strength of the pressure-sensitive adhesive layer with respect to the adhesive layer is reduced by irradiating ultraviolet rays to the pressure-sensitive adhesive layer, the chip is picked up from the pressure-sensitive adhesive layer together with the adhesive sheet on which the adhesive layer is singulated. Thereafter, the chip is mounted on a substrate or the like via an adhesive sheet to manufacture a semiconductor device. In addition, a laminate composed of a chip obtained through a dicing process and an adhesive sheet attached thereto is referred to as a chip with an adhesive sheet.
Conventionally, as a dicing method of a wafer and an adhesive layer, dicing by a blade or the like is widely known. In recent years, with the high integration of semiconductor packages and the thinning of wafers, stealth dicing has been popular (see patent documents 1 and 2). The invisible dicing is a method of forming a predetermined dicing line in the object by laser light, and then dicing the wafer and the adhesive layer along the predetermined dicing line to obtain a chip with an adhesive sheet.
Technical literature of the prior art
Patent literature
Patent document 1: japanese patent laid-open No. 2002-192370
Patent document 2: japanese patent laid-open publication No. 2003-338467
Disclosure of Invention
Technical problem to be solved by the invention
However, in the production of a chip with an adhesive sheet using a thinned chip, there is a problem that the yield is lowered. According to the studies by the present inventors, it was found that peeling sometimes occurs between the end of the chip with the adhesive sheet and the pressure-sensitive adhesive layer before the chip with the adhesive sheet is picked up from the pressure-sensitive adhesive layer. When such peeling occurs, the peeled portion of the pressure-sensitive adhesive layer is in contact with oxygen, and the adhesive strength is not sufficiently lowered when irradiated with ultraviolet rays, and the pickup property tends to be lowered.
And forming an alignment mark on the chip, the means for picking up the chip with the adhesive sheet from the pressure-sensitive adhesive layer, and determining the position of the picked-up chip with the adhesive sheet by recognizing the alignment mark. Therefore, if such peeling occurs, the peeled portion of the pressure-sensitive adhesive layer may be discolored, and the position of the picked-up chip with the adhesive sheet attached cannot be determined, and the pick-up property is lowered.
Accordingly, the present invention provides a dicing die bonding-integrated film capable of suppressing a decrease in pickup. The present invention also provides a method for manufacturing a semiconductor device using the dicing die-bonding integrated film.
Means for solving the technical problems
An aspect of the present invention relates to a method of manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes the following steps.
(A) A step (preparation step) of preparing a dicing die-bonding integrated film, the dicing die-bonding integrated film comprising: a dicing film comprising a substrate layer and a pressure-sensitive adhesive layer composed of an ultraviolet-curable pressure-sensitive adhesive provided on the substrate layer; and an adhesive layer disposed on the pressure-sensitive adhesive layer of the dicing film
(B) Wafer dicing step (dicing step)
(C) Attaching a wafer to an adhesive layer of a dicing die-bonding integrated film (wafer attaching step)
(D) A step of expanding the base material layer under cooling to obtain a wafer and an adhesive layer singulated chip with an adhesive sheet (cooling expansion step)
(E) A step of reducing the adhesive force of the pressure-sensitive adhesive layer with respect to the chip with the adhesive sheet by irradiating the pressure-sensitive adhesive layer with ultraviolet rays (ultraviolet irradiation step)
(F) A step of picking up a chip with an adhesive sheet from the pressure-sensitive adhesive layer (pick-up step)
(G) A step of mounting the picked-up chip with the adhesive sheet on a substrate or other chips (mounting step)
In the dicing die-bonding integrated film prepared in the step (A), the adhesive strength of the pressure-sensitive adhesive layer with respect to the adhesive layer is 15N/25mm or more, measured at a temperature of 23 ℃ under conditions of a peeling angle of 30 DEG and a peeling speed of 600 mm/min.
According to this method of manufacturing a semiconductor device, the dicing die having a predetermined adhesive force can be used to bond the integral film, and before the chip with the adhesive sheet attached thereto is picked up from the pressure-sensitive adhesive layer (before the step (F)), peeling between the end of the chip with the adhesive sheet attached thereto and the pressure-sensitive adhesive layer can be suppressed, and a decrease in the pick-up property can be suppressed. Thus, a semiconductor device can be manufactured with a sufficiently high yield.
In the dicing die-bonding integrated film prepared in the step (A), the pressure-sensitive adhesive layer was irradiated with an illuminance of 70mW/cm 2 An irradiation amount of 150mJ/cm 2 After ultraviolet rays of (2), the adhesive force of the pressure-sensitive adhesive layer after ultraviolet rays irradiation with respect to the adhesive layer measured at a temperature of 23 ℃ under the conditions of a peeling angle of 30 DEG and a peeling speed of 600 mm/min may be 1N/25mm or less.
In the dicing die-bonding integrated film prepared in the step (a), the storage modulus of the dicing film at-15 ℃ may be 100MPa or more. By using a dicing film having a predetermined storage modulus, in the cooling expansion step ((D) step), the adhesive on the outer periphery of the chip with the adhesive sheet tends to be broken by impact and pressure during expansion, and to be easily divided into individual chips with the adhesive sheet.
Another aspect of the invention relates to a dicing die bonding integral type film. The dicing die bonding integrated film includes: a dicing film comprising a substrate layer and a dicing film disposed on the substrate layerA pressure-sensitive adhesive layer composed of an ultraviolet-curable pressure-sensitive adhesive; and an adhesive layer disposed on the pressure-sensitive adhesive layer of the dicing film. The adhesive force of the pressure-sensitive adhesive layer relative to the adhesive layer measured at a temperature of 23 ℃ under the conditions of a peeling angle of 30 DEG and a peeling speed of 600 mm/min is 15N/25mm or more. Irradiating the pressure-sensitive adhesive layer with illuminance of 70mW/cm 2 An irradiation amount of 150mJ/cm 2 After ultraviolet rays of (2), the adhesive force of the pressure-sensitive adhesive layer after ultraviolet rays irradiation with respect to the adhesive layer measured at a temperature of 23 ℃ under the conditions of a peeling angle of 30 DEG and a peeling speed of 600 mm/min may be 1N/25mm or less. The storage modulus of the cut film at-15 ℃ may be 100MPa or more.
Effects of the invention
According to the present invention, a dicing die bonding integrated film capable of suppressing deterioration of pickup property is provided. Further, according to the present invention, there is provided a method for manufacturing a semiconductor device using such a dicing die-bonding integrated film.
Drawings
Fig. 1 (a) is a plan view showing an embodiment of a dicing die-bonding integrated film, and fig. 1 (B) is a schematic cross-sectional view taken along line B-B shown in fig. 1 (a).
Fig. 2 is a sectional view schematically showing a state in which 30 ° peel strength of the pressure-sensitive adhesive layer with respect to the adhesive layer is measured.
Fig. 3 is a schematic cross-sectional view of an embodiment of a semiconductor device.
Fig. 4 (a) and 4 (b) are cross-sectional views schematically showing a process of manufacturing a chip with an adhesive sheet.
Fig. 5 (a), 5 (b) and 5 (c) are cross-sectional views schematically showing a process of manufacturing a chip with an adhesive sheet.
Fig. 6 (a) and 6 (b) are cross-sectional views schematically showing a process of manufacturing the semiconductor device shown in fig. 3.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments.
In the present specification, the numerical range indicated by the term "to" means a range in which numerical values before and after the term "to" are included as a minimum value and a maximum value, respectively. In the numerical ranges described in stages in the present specification, the upper limit or the lower limit of the numerical range in a certain stage may be replaced with the upper limit or the lower limit of the numerical range in another stage. In addition, in the numerical ranges described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the embodiment. The upper limit and the lower limit described above may be arbitrarily combined. In the present specification, "(meth) acrylate" means at least one of an acrylate and a methacrylate corresponding thereto. The same applies to "(meth) acryl", "(meth) acrylic", and the like. Also, "(poly)" indicates both cases where there is and is no prefix of "poly". The "a" or "B" may include any one of a and B, or may include two. In addition, 1 kind of material may be used alone, or 2 or more kinds may be used in combination, unless otherwise specified. When a plurality of substances corresponding to the respective components are present in the composition, unless otherwise specified, the content of the respective components in the composition indicates the total amount of the plurality of substances present in the composition.
[ dicing die bonding integral film ]
Fig. 1 (a) is a plan view showing an embodiment of a dicing die-bonding integrated film, and fig. 1 (B) is a schematic cross-sectional view taken along line B-B shown in fig. 1 (a). The dicing die bonding integrated film 10 (hereinafter, simply referred to as "film 10" as the case may be) can be suitably used in a process for manufacturing a semiconductor device including steps (a) to (G).
The film 10 includes: a dicing film 7 comprising a base material layer 1 and a pressure-sensitive adhesive layer 3 composed of an ultraviolet-curable pressure-sensitive adhesive provided on the base material layer 1; and an adhesive layer 5 disposed on the pressure-sensitive adhesive layer 3 of the dicing film 7. The film 10 includes, in order, a base material layer 1, a pressure-sensitive adhesive layer 3 composed of an ultraviolet-curable pressure-sensitive adhesive, and an adhesive layer 5. In the present embodiment, a case is illustrated in which a laminate of 1 pressure-sensitive adhesive layer 3 and adhesive layer 5 is formed on a square base layer 1, but the base layer 1 may have a predetermined length (for example, 100m or more), and the laminate of the pressure-sensitive adhesive layer 3 and adhesive layer 5 may be arranged at predetermined intervals so as to be aligned along the longitudinal direction thereof.
< cutting film >
The dicing film 7 includes a base material layer 1 and a pressure-sensitive adhesive layer 3 composed of an ultraviolet-curable pressure-sensitive adhesive provided on the base material layer 1.
(pressure-sensitive adhesive layer)
The pressure-sensitive adhesive layer 3 has a bonding force (before irradiation with ultraviolet rays) of 15N/25mm or more with respect to the adhesive layer 5. The adhesive bonding force was 30℃peel strength measured at a peel angle of 30℃and a peel speed of 600 mm/min at a temperature of 23 ℃. Fig. 2 is a sectional view schematically showing a state in which 30 ° peel strength of the pressure-sensitive adhesive layer with respect to the adhesive layer is measured. As shown in fig. 2, the 30 ° peel strength of the pressure-sensitive adhesive layer 3 was measured in a state where the adhesive layer 5 of the measurement sample (width 25mm×length 100 mm) was fixed on the support plate 80. If the adhesive bonding force (30 ° peel strength) of the pressure-sensitive adhesive layer 3 with respect to the adhesive layer 5 is within this range, it is possible to suppress peeling between the end of the chip with the adhesive sheet and the pressure-sensitive adhesive layer before picking up the chip with the adhesive sheet from the pressure-sensitive adhesive layer (before the (F) process), and to suppress a decrease in the pick-up property. Thus, a semiconductor device can be manufactured with a sufficiently high yield. The adhesive force of the pressure-sensitive adhesive layer 3 with respect to the adhesive layer 5 may be 16N/25mm or more, 18N/25mm or more, or 20N/25mm or more. The adhesive strength of the pressure-sensitive adhesive layer 3 with respect to the adhesive layer 5 may be, for example, 30N/25mm or less.
The pressure-sensitive adhesive layer 3 was irradiated with illuminance of 70mW/cm 2 An irradiation amount of 150mJ/cm 2 The pressure-sensitive adhesive layer 3 after irradiation of ultraviolet rays (main wavelength: 365 nm) may have an adhesive strength of 1N/25mm or less or 0.9N/25mm or less with respect to the adhesive layer 5. If the bonding strength of the pressure-sensitive adhesive layer 3 with respect to the adhesive layer 5 after irradiation with ultraviolet rays is in such a rangeIn this case, excellent pick-up can be achieved. The adhesive force of the pressure-sensitive adhesive layer 3 after irradiation with ultraviolet rays with respect to the adhesive layer 5 may be 0.2N/25mm or more, 0.4N/25mm or more, or 0.6N/25mm or more. The adhesive bonding force was the same as that described above, and was 30 ° peel strength measured at a temperature of 23 ℃ under conditions of a peel angle of 30 ° and a peel speed of 600 mm/min (see fig. 2).
In the present embodiment, for example, the adhesive strength of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 and the adhesive strength of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 after irradiation with ultraviolet rays can be adjusted by adjusting the content of the chain-polymerizable functional group (the content of the compound into which the functional group is introduced) in the (meth) acrylic resin a described later, the content of the crosslinking agent for crosslinking the (meth) acrylic resin a, or the like, or by adding other resins (acrylic monomer or oligomer, urethane monomer or oligomer, or the like), an adhesiveness imparting agent (thickener, or the like), for example.
The pressure-sensitive adhesive layer 3 is composed of, for example, an ultraviolet-curable pressure-sensitive adhesive containing a (meth) acrylic resin having a chain-polymerizable functional group (in this specification, sometimes referred to as "(meth) acrylic resin a") and a photopolymerization initiator. Regarding the (meth) acrylic resin a, at least a part thereof may be crosslinked by a crosslinking agent. Hereinafter, the components containing the ultraviolet curable pressure-sensitive adhesive will be described in detail.
(meth) acrylic resin having chain-polymerizable functional group
The ultraviolet curable pressure-sensitive adhesive may contain a (meth) acrylic resin a. In the case where such a (meth) acrylic resin a is contained, the functional group may be at least one selected from the group consisting of an acryl group and a methacryl group. The content of the functional group in the (meth) acrylic resin may be 1.0mmol/g or more, or may be 1.1mmol/g or more or 1.2mmol/g or more. If the content of the functional group in the (meth) acrylic resin a is 1.0mmol/g or more, it is possible to suppress peeling between the end of the chip with the adhesive sheet and the pressure-sensitive adhesive layer before picking up the chip with the adhesive sheet from the pressure-sensitive adhesive layer (before the step (F)), and to suppress a decrease in the pick-up property. From the viewpoint of the pick-up property, the content of the functional group in the (meth) acrylic resin a may be 1.5mmol/g or less.
The (meth) acrylic resin a can be obtained by reacting a (meth) acrylic resin having at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group, and the like (hereinafter, sometimes referred to as a "(meth) acrylic resin a") with a compound having an introduced functional group, which will be described later. The (meth) acrylic resin a may also be referred to as a reactant of the (meth) acrylic resin a and the compound into which the functional group is introduced.
The (meth) acrylic resin a can be synthesized by a known method. Examples of the synthesis method include solution polymerization, suspension polymerization, emulsion polymerization, bulk polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, and supercritical polymerization. Examples of the type of polymerization reaction include other ATRP (atom transfer radical polymerization) and RAFT (reversible addition fragmentation chain transfer polymerization) methods such as radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, and immortalization polymerization. Among them, the synthesis by the radical polymerization using the solution polymerization method has advantages such as good economy, fast reaction rate, easy polymerization control, etc., and the capability of directly blending the resin solution obtained by the polymerization.
Among them, a method of obtaining the (meth) acrylic resin a by radical polymerization using a solution polymerization method will be described in detail.
The monomer used in synthesizing the (meth) acrylic resin a is not particularly limited as long as it is a monomer having 1 (meth) acryloyl group in one molecule. Specific examples thereof include: aliphatic (meth) acrylates such as methyl methacrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) acrylate, butoxyethyl (meth) acrylate, isopentyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octyl heptyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, lauryl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, octadecyl (meth) acrylate, docosyl (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, ethoxypolyethylene glycol (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, ethoxypolypropylene glycol (meth) acrylate, mono (2- (meth) acryloyloxyethyl) succinate; alicyclic (meth) acrylates such as amyl (meth) acrylate, cyclohexyl (meth) acrylate, amyl (meth) acrylate, dicyclopentanyl (meth) acrylate, isobornyl (meth) acrylate, mono (2- (meth) acryloyloxyethyl) tetrahydrophthalate, mono (2- (meth) acryloyloxyethyl) hexahydrophthalate, and the like; aromatic (meth) acrylates such as benzyl (meth) acrylate, phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate, 2-naphthyl (meth) acrylate, phenoxyethyl (meth) acrylate, p-cumylphenoxyethyl (meth) acrylate, o-phenylphenoxyethyl (meth) acrylate, 1-naphthyloxyethyl (meth) acrylate, 2-naphthyloxyethyl (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, nonylphenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, 2-hydroxy-3- (o-phenylphenoxy) propyl (meth) acrylate, 2-hydroxy-3- (1-naphthyloxy) propyl (meth) acrylate, 2-hydroxy-3- (2-naphthyloxy) propyl (meth) acrylate; compounds having an ethylenically unsaturated group and an epoxy group, such as a heterocyclic (meth) acrylate such as 2-tetrahydrofurfuryl (meth) acrylate, N- (meth) acryloyloxyethyl hexahydrophthalimide, 2- (meth) acryloyloxyethyl-N-carbazole, modified products of these caprolactone, ω -carboxy-polycaprolactone mono (meth) acrylate, epoxypropyl (meth) acrylate, α -ethylepoxypropyl (meth) acrylate, α -propylepoxypropyl (meth) acrylate, α -butylepoxypropyl (meth) acrylate, 2-methylpropyl (meth) acrylate, 2-ethylepoxypropyl (meth) acrylate, 2-propylepoxypropyl (meth) acrylate, 3, 4-epoxybutyl (meth) acrylate, 3, 4-epoxyheptyl (meth) acrylate, α -ethyl-6, 7-epoxyheptyl (meth) acrylate, 3, 4-epoxycyclohexyl methyl methacrylate, o-vinylbenzyl epoxypropyl ether, m-vinylbenzyl epoxypropyl ether, p-vinylbenzyl epoxypropyl ether; compounds having an ethylenically unsaturated group and an oxetanyl group, such as methyl (2-ethyl-2-oxetanyl) methacrylate, methyl (2-methyl-2-oxetanyl) methacrylate, 2- (2-ethyl-2-oxetanyl) ethyl (meth) acrylate, 2- (2-methyl-2-oxetanyl) ethyl (meth) acrylate, 3- (2-ethyl-2-oxetanyl) propyl (meth) acrylate, and 3- (2-methyl-2-oxetanyl) propyl (meth) acrylate; compounds having an ethylenically unsaturated group and an isocyanate group, such as 2- (meth) acryloyloxyethyl isocyanate; compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxy (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, and 2-hydroxy (meth) acrylate. The (meth) acrylic resin a as a target can be obtained by appropriately combining these.
The (meth) acrylic resin a has at least one functional group selected from the group consisting of a hydroxyl group, a glycidyl group (epoxy group), an amino group, and the like as a functional group-introduced compound or a reaction point with a crosslinking agent, which will be described later. Examples of the monomer used for synthesizing the hydroxyl group-containing (meth) acrylic resin a include compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxy (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, and 2-hydroxy (meth) acrylate.
Examples of the monomer used for synthesizing the epoxypropyl group-containing (meth) acrylic resin a include epoxypropyl (meth) acrylate, α -ethyl epoxypropyl (meth) acrylate, α -propyl epoxypropyl (meth) acrylate, α -butyl epoxypropyl (meth) acrylate, 2-methyl epoxypropyl (meth) acrylate, 2-ethyl epoxypropyl (meth) acrylate, 2-propyl epoxypropyl (meth) acrylate, 3, 4-epoxybutyl (meth) acrylate, 3, 4-epoxyheptyl (meth) acrylate, α -ethyl-6, 7-epoxyheptyl (meth) acrylate, 3, 4-epoxycyclohexyl methyl methacrylate, o-vinylbenzyl epoxypropyl ether, m-vinylbenzyl epoxypropyl ether, p-vinylbenzyl epoxypropyl ether and other compounds having an ethylenically unsaturated group and an epoxy group.
The (meth) acrylic resin a contains a chain polymerizable functional group. The chain polymerizable functional group is, for example, at least one selected from the group consisting of an acryl group and a methacryl group. The chain polymerizable functional group can be introduced into the (meth) acrylic resin a by, for example, reacting a (meth) acrylic resin a having a functional group selected from at least one of a hydroxyl group, a glycidyl group (epoxy group), an amino group, and the like synthesized as described above with the following compound (functional group-introduced compound). Specific examples of the compound having a functional group introduced therein include: 2-methacryloxyethyl isocyanate, α -dimethyl-4-isopropenyl benzyl isocyanate, allyl isocyanate, 1- (bisacryloxymethyl) ethyl isocyanate; an acryl monoisocyanate compound obtained by reacting a diisocyanate compound or polyisocyanate compound with hydroxyethyl (meth) acrylate or 4-hydroxybutyl ethyl (meth) acrylate; and an acryl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound, a polyol compound, and a hydroxyethyl (meth) acrylate. Among these, the compound to which the functional group is introduced may be 2-methacryloxyethyl isocyanate.
The (meth) acrylic resin a may mainly have at least one functional group selected from hydroxyl groups, glycidyl groups (epoxy groups), amino groups, and the like as a reaction site, and a part of the reaction site is crosslinked by a crosslinking agent. That is, at least a part of the (meth) acrylic resin a may be crosslinked by a crosslinking agent. The ultraviolet curable pressure-sensitive adhesive may contain, as the (meth) acrylic resin a, (meth) acrylic resin crosslinked by a crosslinking agent having a chain-polymerizable functional group.
The crosslinking agent is used, for example, for the purpose of controlling the storage modulus and/or the tackiness of the pressure-sensitive adhesive layer. The crosslinking agent may be any compound having 2 or more functional groups in one molecule, and the functional groups may react with at least one functional group selected from the group consisting of hydroxyl groups, glycidyl groups, amino groups, and the like, which are contained in the (meth) acrylic resin a. Examples of the bond formed by the reaction of the (meth) acrylic resin a and the crosslinking agent include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond.
The crosslinking agent may be, for example, a polyfunctional isocyanate having 2 or more isocyanate groups in one molecule. When such a polyfunctional isocyanate is used, it can easily react with hydroxyl groups, epoxypropyl groups, amino groups, and the like of the (meth) acrylic resin a to form a strong crosslinked structure.
Examples of the polyfunctional isocyanate having 2 or more isocyanate groups in one molecule include isocyanate compounds such as 2, 4-toluene diisocyanate, 2, 6-toluene diisocyanate, 1, 3-xylene diisocyanate, 1, 4-xylene diisocyanate, diphenylmethane-4, 4 '-diisocyanate, diphenylmethane-2, 4' -diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4, 4 '-diisocyanate, dicyclohexylmethane-2, 4' -diisocyanate, and lysine isocyanate.
The crosslinking agent may be a reactant of a polyfunctional isocyanate and a polyol having 2 or more hydroxyl groups in one molecule (an oligomer containing an isocyanate group). Examples of the polyhydric alcohol having 2 or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1, 6-hexanediol, 1, 8-octanediol, 1, 9-nonanediol, 1, 10-decanediol, 1, 11-undecanediol, 1, 12-dodecanediol, glycerol, trimethylolpropane, pentaerythritol, dipentaerythritol, 1, 4-cyclohexanediol, and 1, 3-cyclohexanediol.
Of these, the crosslinking agent may be a reactant (oligomer containing an isocyanate group) of a polyfunctional isocyanate having 2 or more isocyanate groups in one molecule and a polyol having 3 or more hydroxyl groups in one molecule. By using an oligomer containing such an isocyanate group as a crosslinking agent, the pressure-sensitive adhesive layer 3 forms a dense crosslinked structure, and thus, there is a tendency that the pressure-sensitive adhesive can be suppressed from adhering to the adhesive layer 5 in the pick-up process.
The content of the crosslinking agent when reacting the (meth) acrylic resin a with the crosslinking agent can be appropriately set in accordance with the cohesive force, elongation at break, adhesiveness to the adhesive layer, and the like obtained for the pressure-sensitive adhesive layer. Specifically, the content of the crosslinking agent may be, for example, 0.1 to 10 parts by mass, 0.2 to 7 parts by mass, or 0.3 to 5 parts by mass, based on 100 parts by mass of the total amount of the (meth) acrylic resin a. When the content of the crosslinking agent is within such a range, the properties required for the pressure-sensitive adhesive layer in the dicing step and the properties required for the pressure-sensitive adhesive layer in the die bonding step can be balanced, and excellent pick-up properties can be obtained.
When the content of the crosslinking agent is 0.1 part by mass or more relative to 100 parts by mass of the total amount of the (meth) acrylic resin a, the formation of the crosslinked structure is not likely to become insufficient, and the interface adhesion with the adhesive layer is sufficiently reduced in the pickup step, so that defects tend not to be generated at the time of pickup. On the other hand, if the content of the crosslinking agent is 10 parts by mass or less relative to 100 parts by mass of the total amount of the (meth) acrylic resin a, the pressure-sensitive adhesive layer is less likely to become excessively hard, and the chip is less likely to peel off in the expansion step.
The (meth) acrylic resin a may be the main component of the ultraviolet curable pressure-sensitive adhesive (or pressure-sensitive adhesive layer 3). The content of the (meth) acrylic resin a may be 80 mass% or more, 85 mass% or more, 90 mass% or more, 95 mass% or more, or 98 mass% or more based on the total amount of the ultraviolet curable pressure-sensitive adhesive (or pressure-sensitive adhesive layer 3).
Photopolymerization initiator
The photopolymerization initiator is not particularly limited as long as it is an active species capable of undergoing chain polymerization by irradiation with ultraviolet rays. Examples of the photopolymerization initiator include a photo radical polymerization initiator and the like. The chain polymerizable reactive species refers to a substance that starts a polymerization reaction by reacting with a chain polymerizable functional group.
Examples of the photo radical polymerization initiator include: benzoin ketals such as 2, 2-dimethoxy-1, 2-diphenylethan-1-one; alpha-hydroxyketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, and 1- [4- (2-hydroxyethoxy) phenyl ] -2-hydroxy-2-methyl-1-propan-1-one; α -amino ketones such as 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one, 1, 2-methyl-1- [4- (methylthio) phenyl ] -2-morpholinopropan-1-one; oxime esters such as 1- [4- (phenylsulfanyl) phenyl ] -1, 2-octanedione-2- (benzoyl) oxime; phosphine oxides such as bis (2, 4, 6-trimethylbenzoyl) phenylphosphine oxide, bis (2, 6-dimethoxybenzoyl) -2, 4-trimethylpentylphosphine oxide, and 2,4, 6-trimethylbenzoyl diphenylphosphine oxide; 2,4, 5-triarylimidazole dimers such as 2- (o-chlorophenyl) -4, 5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4, 5-di (methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4, 5-diphenylimidazole dimer, 2- (o-methoxyphenyl) -4, 5-diphenylimidazole dimer, and 2- (p-methoxyphenyl) -4, 5-diphenylimidazole dimer; benzophenone, N, N, N ', N ' -tetramethyl-4, 4' -diaminobenzophenone, N, N, N ', diphenyl ketone compounds such as N ' -tetraethyl-4, 4' -diaminobenzophenone and 4-methoxy-4 ' -dimethylaminobenzophenone; quinone compounds such as 2-ethylanthraquinone, phenanthrenequinone, 2-t-butylanthraquinone, octamethylanthraquinone, 1, 2-phenylanthraquinone, 2, 3-phenylanthraquinone, 2, 3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1, 4-naphthoquinone, 9, 10-phenanthrenequinone, 2-methyl-1, 4-naphthoquinone, and 2, 3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, benzoin phenyl ether, and the like; benzoin compounds such as benzoin, methyl benzoin, ethyl benzoin, and the like; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-benzacridine and 1, 7-bis (9, 9' -acridinylheptane); n-phenylglycine, coumarin, and the like.
The content of the photopolymerization initiator in the ultraviolet curable pressure-sensitive adhesive may be 0.1 to 30 parts by mass, 0.3 to 10 parts by mass, or 0.5 to 5 parts by mass with respect to 100 parts by mass of the total amount of the (meth) acrylic resin a. If the content of the photopolymerization initiator is 0.1 part by mass or more relative to 100 parts by mass of the total amount of the (meth) acrylic resin a, the pressure-sensitive adhesive layer is not likely to be sufficiently cured after irradiation with ultraviolet rays, and pick-up failure is not likely to occur. When the content of the photopolymerization initiator is 30 parts by mass or less relative to 100 parts by mass of the total amount of the (meth) acrylic resin a, contamination of the adhesive layer (transfer to the adhesive layer of the photopolymerization initiator) tends to be prevented.
The ultraviolet curable pressure sensitive adhesive may contain other components. Examples of the other component include resins other than (meth) acrylic resins having chain polymerizable functional groups (acrylic monomers or oligomers, urethane monomers or oligomers, and the like), and adhesion imparting agents (thickeners, and the like).
The thickness of the pressure-sensitive adhesive layer 3 may be appropriately set depending on the conditions (temperature, tension, etc.) of the expansion process, and may be, for example, 1 to 100 μm,2 to 50 μm,3 to 20 μm, or 5 to 15 μm. If the thickness of the pressure-sensitive adhesive layer 3 is 1 μm or more, the adhesiveness is less likely to become insufficient, and if it is 100 μm or less, the kerf width becomes wider at the time of expansion (no pressure relaxation occurs at the time of pushing on the pin), and pickup is less likely to become insufficient.
The pressure-sensitive adhesive layer 3 is formed on the base material layer 1. As a method for forming the pressure-sensitive adhesive layer 3, a known method can be employed. For example, a laminate of the base material layer 1 and the pressure-sensitive adhesive layer 3 may be formed by a double-layer extrusion method, or a varnish of an ultraviolet-curable pressure-sensitive adhesive (a varnish for forming a pressure-sensitive adhesive layer) may be prepared, applied to the surface of the base material layer 1, or the pressure-sensitive adhesive layer 3 may be formed on a film subjected to a mold release treatment, and transferred to the base material layer 1.
The varnish of the ultraviolet curable pressure-sensitive adhesive (varnish for forming a pressure-sensitive adhesive layer) is an organic solvent capable of dissolving the (meth) acrylic resin a, the photopolymerization initiator, and the crosslinking agent, and may be a substance that volatilizes by heating. Specific examples of the organic solvent include: aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1, 4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, gamma-butyrolactone and the like; carbonates such as ethylene carbonate and propylene carbonate; polyhydric alcohol alkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; polyhydric alcohol alkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, etc.; amides such as N, N-dimethylformamide acetamide, N-dimethylacetamide and N-methyl-2-pyrrolidone.
Among these, the organic solvent may be at least one selected from the group consisting of toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N, N-dimethylacetamide, for example, from the viewpoint of solubility and boiling point. The solid content concentration of the varnish is usually 10 to 60 mass%.
(substrate layer)
The base material layer 1 may be a known polymer sheet or film, and is not particularly limited as long as the stretching process can be performed under low temperature conditions. Specific examples of the substrate layer 1 include crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, polyolefin such as polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyester such as polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aramid (paper), glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, a mixture of these with a plasticizer, or a cured product crosslinked by irradiation with electron beam.
The base material layer 1 has a surface having at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer and polyethylene-polypropylene block copolymer as a main component, and the surface may be in contact with the pressure-sensitive adhesive layer 3. These resins can be excellent base materials from the viewpoints of properties such as Young's modulus, pressure relaxation property and melting point, price, recycling of waste after use, and the like. The base material layer 1 may be a single layer or may have a multilayer structure in which layers made of different materials are stacked as needed. From the viewpoint of controlling the adhesion to the pressure-sensitive adhesive layer 3, the substrate layer 1 may be subjected to surface roughening treatment such as matting treatment, corona treatment, or the like on its surface.
The thickness of the base material layer 1 may be, for example, 10 to 200 μm or 20 to 170 μm.
The dicing film 7 (dicing film 7 including the base material layer 1 and the pressure-sensitive adhesive layer 3 composed of an ultraviolet-curable pressure-sensitive adhesive provided on the base material layer 1) may have a storage modulus at-15 ℃ of 100MPa or more. If the storage modulus of the dicing film 7 at-15 ℃ is within this range, the adhesive on the outer periphery of the chip with the adhesive sheet tends to be broken by the impact and pressure during the expansion in the cooling expansion step ((D)) and the dicing film tends to be easily divided into individual chips with the adhesive sheet. The storage modulus of the dicing film 7 at-15 ℃ may be 300MPa or more or 500MPa or more. The storage modulus of the dicing film 7 at-15 ℃ may be 1000MPa or less, for example. The storage modulus represents a value obtained by measurement based on the following apparatus and conditions.
Dynamic viscoelasticity measurement device: rheogel E-4000 (Universal Building Materials Co., ltd.)
Object of measurement: film-shaped formed article (cut film) of ultraviolet-curable pressure-sensitive adhesive (width: 4mm, length: 40 mm)
Temperature increase rate: 3 ℃/min
Frequency: 1Hz
Distance between the jaws: 20mm of
Load condition: self-dynamic and static load
< adhesive layer >)
In the adhesive layer 5, an adhesive composition constituting a known die bonding film can be applied. Specifically, the adhesive composition constituting the adhesive layer 5 may contain an epoxy resin, an epoxy resin curing agent, and a (meth) acrylic copolymer containing a reactive group. The adhesive composition comprising the adhesive layer 5 may further comprise a curing accelerator and a filler. According to the adhesive layer 5 containing these components, there is a tendency to have the following characteristics: the die-to-substrate and die-to-die adhesion are excellent, and electrode injectability, wire injectability, and the like can be provided, and in the die bonding step, bonding can be performed at a low temperature, excellent curing can be obtained in a short time, and excellent reliability and the like can be provided after molding with a sealant.
Examples of the epoxy resin include bisphenol a type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol a novolac type epoxy resin, diglycidyl etherate of bisphenol, diglycidyl etherate of naphthalene diol, phenolic diglycidyl etherate, diglycidyl etherate of alcohol, difunctional epoxy resin such as alkyl substituent, halide, and hydrogenated product of these, novolac type epoxy resin, and the like. Further, other epoxy resins generally known, such as multifunctional epoxy resins and heterocyclic epoxy resins, may be used. The epoxy resin may contain components other than the epoxy resin as impurities within a range that does not impair the characteristics.
Examples of the epoxy resin curing agent include a phenol resin obtained by reacting a phenol compound with a xylene compound as a 2-valent linking group in the absence of a catalyst or in the presence of an oxygen catalyst. Examples of phenol compounds used in the production of the phenol resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-propylphenol, p-n-propylphenol, o-isopropylphenol, m-isopropylphenol, p-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2, 4-xylenol, 2, 6-xylenol, 3, 5-xylenol, 2,4, 6-trimethylphenol, resorcinol, catechol, hydroquinone, 4-methoxyphenol, o-phenylphenol, m-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, and p-fluorophenol. As the xylene compound which is a 2-valent linking group used in the production of the phenolic resin, xylene dihalides, xylene diethylene glycol, and derivatives thereof shown below can be used. Specifically, specific examples of the xylene compound include α, α '-dichloro-p-xylene, α' -dichloro-m-xylene, α '-dichloro-o-xylene, α' -dibromo-p-xylene, α '-dibromo-m-xylene, α' -dibromo-o-xylene, and α, alpha '-diiodo-para-xylene, alpha' -diiodo-meta-xylene, alpha '-diiodo-ortho-xylene, alpha' -dihydroxy-para-xylene, alpha, alpha '-dihydroxy-meta-xylene, alpha' -dihydroxy-ortho-xylene, alpha '-dimethoxy-para-xylene, alpha' -dimethoxy-meta-xylene, alpha, alpha '-dimethoxy-o-xylene, alpha' -diethoxy-p-xylene, alpha '-diethoxy-m-xylene, alpha' -diethoxy-o-xylene, alpha, alpha '-di-n-propoxy-p-xylene, alpha' -di-n-propoxy-m-xylene, alpha '-di-n-propoxy-o-xylene, alpha, alpha' -di-n-propoxy-p-xylene, alpha '-di-n-propoxy-m-xylene, alpha, alpha' -di-n-propoxy-o-xylene, alpha, α, α '-diisobutoxy-p-xylene, α' -diisobutoxy-m-xylene, α '-diisobutoxy-o-xylene, α' -di-t-butoxy-p-xylene, α '-di-t-butoxy-m-xylene, α' -di-t-butoxy-o-xylene, and the like.
In the case of reacting a phenol compound with a xylene compound, an inorganic acid such as hydrochloric acid, sulfuric acid, phosphoric acid, or polyphosphoric acid can be used; organic carboxylic acids such as dimethyl sulfuric acid, diethyl sulfuric acid, p-toluene sulfonic acid, methane sulfonic acid, ethane sulfonic acid, and the like; super acids such as trifluoromethanesulfonic acid; strongly acidic ion exchange resins such as alkane sulfonic acid type ion exchange resins; super strong acidic ion exchange resins such as perfluoroalkanesulfonic acid type ion exchange resins (product name: nafil, nafion, du Pont de Nemours, inc., "Nafion" is a registered trademark); natural and synthetic zeolites; and acid catalysts such as activated clay (acid clay), and the like, and the raw material xylene compound is substantially eliminated at 50 to 250 ℃ and reacted until the reaction composition becomes constant, thereby obtaining a phenolic resin. The reaction time can be appropriately set according to the starting materials and the reaction temperature, and can be, for example, about 1 to 15 hours, and can be determined by GPC (gel permeation chromatography) or the like while tracking the reaction composition.
The reactive group-containing (meth) acrylic copolymer may be, for example, an epoxy group-containing (meth) acrylic copolymer. The epoxy group-containing (meth) acrylic copolymer may be a copolymer obtained by using, as a raw material, a propylene oxide (meth) acrylate in an amount of 0.5 to 6 mass% relative to the obtained copolymer. When the content of the epoxypropyl (meth) acrylate is 0.5 mass% or more, high adhesion is easily obtained, while when it is 6 mass% or less, gelation tends to be suppressed. The monomer constituting the remainder of the (meth) acrylic copolymer containing a reactive group may be, for example, an alkyl (meth) acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl methacrylate, styrene, acrylonitrile, or the like. Among these, the monomers constituting the remainder of the (meth) acrylic copolymer containing a reactive group may be ethyl (meth) acrylate and/or butyl (meth) acrylate. The mixing ratio can be adjusted in consideration of Tg of the (meth) acrylic copolymer containing the reactive group. When Tg is-10 ℃ or higher, the tackiness of the adhesive layer 5 in the B-stage state tends to be suppressed from becoming too great, and the workability tends to be excellent. The glass transition temperature (Tg) of the epoxy group-containing (meth) acrylic copolymer may be, for example, 30 ℃ or lower. The polymerization method is not particularly limited, and examples thereof include bead polymerization, solution polymerization, and the like. As a commercially available epoxy group-containing (meth) acrylic copolymer, HTR-860P-3 (product name, manufactured by Nagase Chemtex Corporation) can be mentioned, for example.
The weight average molecular weight of the epoxy group-containing (meth) acrylic copolymer may be 10 ten thousand or more, or 30 ten thousand to 300 ten thousand or 50 ten thousand to 200 ten thousand from the viewpoint of adhesion and heat resistance. When the weight average molecular weight is 300 ten thousand or less, the decrease in the filling property between the chip and the substrate supporting the chip can be suppressed. The weight average molecular weight is a polystyrene equivalent by Gel Permeation Chromatography (GPC) using a calibration curve based on standard polystyrene.
Examples of the curing accelerator include tertiary amines, imidazoles, and quaternary ammonium salts. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate.
The filler may be an inorganic filler. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate crystal, boron nitride, crystalline silica, and amorphous silica.
The thickness of the adhesive layer 5 may be, for example, 1 to 300 μm, 5 to 150 μm or 10 to 100 μm. When the thickness of the adhesive layer 5 is 1 μm or more, the adhesion is more excellent, and when it is 300 μm or less, the division and pick-up properties at the time of expansion are more excellent.
The adhesive layer 5 may not include a thermosetting resin (epoxy resin and epoxy resin curing agent). For example, in the case where the adhesive layer 5 includes a (meth) acrylic copolymer containing a reactive group, the adhesive layer 5 may include a (meth) acrylic copolymer containing a reactive group, a curing accelerator, and a filler.
The method of forming the adhesive layer 5 on the pressure-sensitive adhesive layer 3 of the dicing film 7 can employ a known method. As a method of forming the adhesive layer 5, for example, a method of preparing a varnish (adhesive layer forming varnish) of an adhesive composition and applying it to the surface of the pressure-sensitive adhesive layer 3, a method of forming a die-bonding film including a film subjected to a release treatment and the adhesive layer 5 provided on the film subjected to the release treatment, and attaching the adhesive layer 5 in the die-bonding film to the pressure-sensitive adhesive layer 3, and the like can be cited. The varnish of the adhesive composition (adhesive layer forming varnish) is an organic solvent capable of dissolving the components other than the filler, and may be a substance volatilized by heating. Specific examples of the organic solvent include the same organic solvent as that in the varnish of the ultraviolet-curable pressure-sensitive adhesive.
The film 10 can be manufactured, for example, by a method comprising: a step of preparing a dicing film 7 including a base material layer 1 and a pressure-sensitive adhesive layer 3 composed of an ultraviolet-curable pressure-sensitive adhesive provided on the base material layer 1; and a step of disposing the adhesive layer 5 on the pressure-sensitive adhesive layer 3 of the dicing film 7.
[ semiconductor device and method for manufacturing the same ]
Fig. 3 is a schematic cross-sectional view of an embodiment of a semiconductor device. The semiconductor device 100 shown in fig. 3 includes: a substrate 70, 4 chips S1, S2, S3, S4 stacked on the surface of the substrate 70, electrodes (not shown) on the surface of the substrate 70, wires W1, W2, W3, W4 electrically connected to the 4 chips S1, S2, S3, S4, and a sealing layer 50 sealing these.
The substrate 70 may be, for example, an organic substrate or a metal substrate such as a lead frame. The thickness of the substrate 70 may be, for example, 70 to 140 μm or 80 to 100 μm from the viewpoint of suppressing warpage of the semiconductor device 100.
The 4 chips S1, S2, S3, S4 may be stacked via the cured product 5C of the adhesive sheet 5P. The chips S1, S2, S3, S4 have square or rectangular shapes when viewed in plan. The area of the chips S1, S2, S3 and S4 can be 30-250 mm 2 May be 40-200 mm 2 Or 50 to 150mm 2 . The length of one side of the chips S1, S2, S3, S4 is, for example, 6.0mm or more, and may be 7.0 to 18mm or 8.0 to 15mm. The thickness of the chips S1, S2, S3, S4 may be, for example, 10 to 100. Mu.m, or 20 to 80. Mu.m. The lengths of one side of the 4 chips S1, S2, S3, S4 may be the same or different from each other, and the thicknesses may be the same. The 4 chips S1, S2, S3, and S4 may be small-sized chips. That is, the area of the chips S1, S2, S3, S4 may be, for example, less than 30mm 2 May be 0.1 to 20mm 2 Or 1 to 15mm 2 。
The method for manufacturing the semiconductor device 100 includes the following steps.
(A) A step (preparation step) of preparing a dicing die-bonding integrated film, the dicing die-bonding integrated film comprising: a dicing film comprising a substrate layer and a pressure-sensitive adhesive layer composed of an ultraviolet-curable pressure-sensitive adhesive provided on the substrate layer; and an adhesive layer disposed on the pressure-sensitive adhesive layer of the dicing film
(B) Wafer dicing step (dicing step)
(C) Attaching a wafer to an adhesive layer of a dicing die-bonding integrated film (wafer attaching step)
(D) A step of expanding the base material layer under cooling to obtain a wafer and an adhesive layer singulated chip with an adhesive sheet (cooling expansion step)
(E) A step of reducing the adhesive force of the pressure-sensitive adhesive layer with respect to the chip with the adhesive sheet by irradiating the pressure-sensitive adhesive layer with ultraviolet rays (ultraviolet irradiation step)
(F) A step of picking up a chip with an adhesive sheet from the pressure-sensitive adhesive layer (pick-up step)
(G) A step of mounting the picked-up chip with the adhesive sheet on a substrate or other chips (mounting step)
In the dicing die-bonding integrated film prepared in the step (A), the adhesive strength of the pressure-sensitive adhesive layer with respect to the adhesive layer is 15N/25mm or more, measured at a temperature of 23 ℃ under conditions of a peeling angle of 30 DEG and a peeling speed of 600 mm/min. In the dicing die-bonding integrated film prepared in the step (a), the storage modulus of the dicing film at-15 ℃ is 100MPa or more.
An example of a method for manufacturing the chip 8 with the adhesive sheet will be described with reference to fig. 4 and 5. First, the film 10 is prepared ((a) step (preparation step)).
Next, a protective film (sometimes referred to as a "BG tape") is attached to the circuit surface Wa of the wafer W, and a laser beam is irradiated onto the wafer W to form a plurality of dicing lines L ((B) step (dicing step), see fig. 4 (a)). This is called stealth cutting. The dicing method can be suitably used for a thin wafer W (for example, 100 μm or less). Thereafter, the wafer W may be subjected to a back polishing process for adjusting the thickness of the wafer W and a polishing process for polishing the wafer W, as needed. Although laser-based stealth dicing is described here, instead of stealth dicing, the wafer W may be stealth diced by a blade. Which is sometimes referred to as a stealth cut. Invisible dicing means that a kerf corresponding to a predetermined dicing line L of the wafer W is formed without dicing the wafer W.
Next, as shown in fig. 4 (a), the back surface Wb of the wafer W is attached to the adhesive layer 5 of the film 10 ((B) step (wafer attaching step)). At this time, the dicing ring DR may be attached to the pressure-sensitive adhesive layer 3.
Next, as shown in fig. 4 b, the wafer W and the adhesive layer 5 are singulated by cooling and expanding at a temperature of-15 to 0 ℃ (step (cooling and expanding step)). That is, as shown in fig. 4 (b), the ring Ra pushes up the inner region 1a of the dicing ring DR in the base material layer 1, thereby imparting tension to the base material layer 1. Thereby, the wafer W is divided along the predetermined dicing line L, and the following adhesive layer 5 is divided by the adhesive sheet 5P, and a plurality of chips 8 with the adhesive sheet attached are obtained on the surface of the pressure-sensitive adhesive layer 3. The chip 8 with the adhesive sheet is composed of a chip S and an adhesive sheet 5P.
Next, the inner region 1a of the dicing ring DR in the base material layer 1 is heated to shrink (heat shrink) the inner region 1 a. Fig. 5 (a) is a cross-sectional view schematically showing a state in which the inner region 1a is heated by the air blowing of the heater H. By contracting the inner region 1a into a ring shape to apply tension to the base material layer 1, the interval between adjacent chips 8 with adhesive sheets can be widened. This can further suppress occurrence of pick-up errors and improve visibility of the chip 8 with the adhesive sheet in the pick-up process.
Next, as shown in fig. 5 (b), the adhesive force of the pressure-sensitive adhesive layer 3 is reduced by irradiation of ultraviolet rays ((E) step (ultraviolet irradiation step)). The illuminance of the ultraviolet light to the pressure-sensitive adhesive layer 3 may be, for example, 1 to 200mW/cm 2 ，10～150mW/cm 2 Or 30-100 mW/cm 2 . The irradiation amount of the pressure-sensitive adhesive layer 3 with ultraviolet rays is, for example, 10 to 1000mJ/cm 2 May be 50-700 mJ/cm 2 Or 100-500 mJ/cm 2 . Thereafter, as shown in FIG. 5 (c), the chip 8 with the adhesive sheet is attached by pushing up the chip with the adhesive sheet by the pushing-up jig 42The chip 8 of the adhesive sheet is peeled off from the pressure-sensitive adhesive layer 3, and the chip 8 with the adhesive sheet attached is picked up by suction by the suction chuck 44 ((F) process (pick-up process)).
The chip 8 with the adhesive sheet is transported to an assembling device (not shown) of the semiconductor device, and is pressed against a circuit board or the like ((G) step (mounting step)). As shown in fig. 6 (a), the first stage chip S1 (chip S) is pressure-bonded to a predetermined position of the substrate 70 via the adhesive sheet 5P. Next, the adhesive sheet 5P is cured by heating (die bonding step). Thus, the adhesive sheet 5P becomes a cured product 5C by curing. From the viewpoint of reducing the voids, the curing treatment of the adhesive sheet 5P may be performed under a pressurized atmosphere.
The second stage chip S2 is mounted on the surface of the chip S1 in the same manner as the chip S1 is mounted on the substrate 70. The structure 60 shown in fig. 6 (b) is fabricated by mounting the chips S3 and S4 of the third and fourth stages. The semiconductor device 100 shown in fig. 3 can be manufactured by forming the sealing layer 50 for sealing the semiconductor element and the wire after the chips S1, S2, S3, S4 and the substrate 70 are electrically connected by the wires W1, W2, W3, W4, respectively.
Examples
Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited to these examples. Unless otherwise specified, reagents (commercially available products) are used for the pharmaceutical products.
< manufacturing example 1 >
[ (meth) acrylic resin (A-1) Synthesis ]
The following components were added to a 2000mL flask equipped with and attached to a three-in-one motor, a stirring paddle, and a nitrogen inlet tube.
Ethyl acetate (solvent): 635 parts by mass
2-ethylhexyl acrylate: 395 parts by mass
2-hydroxyethyl acrylate: 100 parts by mass
Methacrylic acid: 5 parts by mass
Azobisisobutyronitrile: 0.08 part by mass
After the contents were stirred to be sufficiently uniform, bubbling was performed at a flow rate of 500 mL/min for 60 minutes, and dissolved oxygen in the system was degassed. The temperature was raised to 78℃over 1 hour, and polymerization was carried out for 6 hours after the temperature was raised. Then, the reaction solution was transferred to a 2000mL autoclave equipped with a three-in-one motor, a stirring blade, and a nitrogen inlet, and heated at 120℃for 4.5 hours under 0.28MPa, and then cooled to room temperature (25 ℃ C., the same applies hereinafter).
Subsequently, 490 parts by mass of ethyl acetate was added and stirred, thereby diluting the content. To this was added 0.10 parts by mass of dioctyltin dilaurate as a urethanization catalyst, followed by 105.3 parts by mass of 2-methacryloxyethyl isocyanate (manufactured by SHOWA DENKO k.k., product name)) and reacted at 70 ℃ for 6 hours, followed by cooling to room temperature. Next, ethyl acetate was further added to adjust the nonvolatile content in the (meth) acrylic resin solution to 35 mass%, thereby obtaining a solution containing the (meth) acrylic resin (a-1) having a chain polymerizable functional group in production example 1.
< manufacturing example 2 >
[ (meth) acrylic resin (A-2) Synthesis ]
A solution containing the (meth) acrylic resin (a-2) of production example 2 was obtained in the same manner as in production example 1, except that the raw material monomer composition shown in production example 1 of table 1 was changed to the raw material monomer composition shown in production example 2 of table 1. The measurement results of the properties of the (meth) acrylic resin (A-2) of production example 2 are shown in Table 1.
< manufacturing example 3 >
[ (meth) acrylic resin (A-3) Synthesis ]
A solution containing the (meth) acrylic resin (a-3) of production example 3 was obtained in the same manner as in production example 1, except that the raw material monomer composition shown in production example 1 of table 1 was changed to the raw material monomer composition shown in production example 3 of table 1. The measurement results of the properties of the (meth) acrylic resin (A-3) of production example 3 are shown in Table 1.
TABLE 1
Example 1 >
[ production of dicing film (pressure-sensitive adhesive layer) ]
A varnish of an ultraviolet-curable pressure-sensitive adhesive (pressure-sensitive adhesive layer-forming varnish) was prepared by mixing the following components (refer to table 2). The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish became 25 mass%.
Solution of production example 1 containing (meth) acrylic resin (a-1): 100 parts by mass (solid content)
Photopolymerization initiator (B-1) 1-hydroxycyclohexyl phenyl ketone (IGM RESINS B.V. manufactured by Omnirad 184, the "Omnirad" being a registered trademark): 1.0 part by mass
Photopolymerization initiator (B-2) phenylbis (2, 4, 6-trimethylbenzoyl) phosphine oxide (IGM RESINS b.v. company, manufactured by Omnirad 819, "Omnirad" is a registered trademark): 0.2 part by mass
Crosslinking agent (C-1) (polyfunctional isocyanate (reactant of toluene diisocyanate and trimethylolpropane), nippon Polyurethane Industry co., ltd., corporation, coronate L, solid content: 75%): 2.0 parts by mass (solid content)
Ethyl acetate (solvent)
A polyethylene terephthalate film (width 450mm, length 500mm, thickness 38 μm) having been subjected to a mold release treatment on one surface was prepared. The surface subjected to the release treatment was coated with a varnish of an ultraviolet curable pressure sensitive adhesive using an applicator, and then dried at 80℃for 3 minutes. Thus obtained was a laminate (dicing film) composed of a polyethylene terephthalate film and a pressure-sensitive adhesive layer of thickness 8 μm formed thereon.
A polyolefin film (width 450mm, length 500mm, thickness 90 μm) on one surface of which corona treatment was performed was prepared. The corona-treated surface and the pressure-sensitive adhesive layer of the laminate were bonded at room temperature. Next, the pressure-sensitive adhesive layer was transferred to a polyolefin film (cover film) by pressing with a rubber roller. Thereafter, a cut film with a cover film attached thereto was obtained by standing at room temperature for 3 days.
[ production of die-bonding film (adhesive layer) ]
The following components were mixed to prepare a varnish for forming an adhesive layer. First, cyclohexanone (solvent) was added to a mixture containing the following ingredients and mixed with stirring, and then, the mixture was further mixed with a bead mill for 90 minutes.
Epoxy resin (YDCN-700-10 (product name), NIPPON STEEL Chemical & Material Co., ltd. Manufactured, cresol novolac type epoxy resin, epoxy equivalent: 210, molecular weight: 1200, softening point: 80 ℃ C.). 11.0 parts by mass
Epoxy resin (EXA-830 CRP (product name), manufactured by DIC CORPORATION, bisphenol F type epoxy resin, epoxy equivalent: 160, molecular weight: 1800, softening point: 85 ℃ C.). 13.0 parts by mass
Phenolic resin (Millex XLC-LL (product name), manufactured by Mitsui Chemicals, inc., phenolic resin, hydroxyl equivalent: 175, water absorption: 1.8%, heating weight reduction at 350 ℃ C.: 4%): 18.7 parts by mass
Silane coupling agent (manufactured by NUC a-189 (product name) NUC company, γ -mercaptopropyl trimethoxysilane): 0.1 part by mass
Silane coupling agent (NUC a-1160 (product name), manufactured by ENEOS NUC Corporation, γ -ureidopropyltriethoxysilane): 0.2 part by mass
Filler (SC 2050-HLG (product name), ADMATECHS co., ltd. Manufactured, silica, average particle size 0.500 μm): 39 parts by mass
To the mixture obtained as described above, the following components were further added, and then the mixture was stirred, mixed and vacuum deaerated to obtain a varnish for forming an adhesive layer.
Acrylic copolymer containing an epoxy group (HTR-860P-3 (product name), manufactured by Nagase Chemtex Corporation, weight average molecular weight: 80 ten thousand): 16 parts by mass
0.1 part by mass of a curing accelerator (Curesol 2PZ-CN (product name), manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole, "Curesol" is a registered trademark)
A polyethylene terephthalate film (thickness 35 μm) was prepared, one surface of which was subjected to a mold release treatment. The release-treated surface was coated with an adhesive layer-forming varnish using an applicator, and then dried by heating at 140℃for 5 minutes. Thus, a laminate (die-bonding film) composed of a polyethylene terephthalate film (carrier film) and an adhesive layer (B-stage state) formed thereon and having a thickness of 25 μm was obtained.
[ production of dicing die-bonded integral film ]
The die-bonding film composed of the adhesive layer and carrier film was cut into circles each having a diameter of 312 mm. On the cut die-bonding film, a cut film from which the polyethylene terephthalate film was peeled was attached at room temperature, and then left at room temperature for 1 day. Thereafter, the cut film was cut into a circular shape of 370mm in diameter. In this way, a plurality of dicing die-bonded integrated films of example 1 for use in various evaluation tests described later were obtained.
Example 2 >
A plurality of dicing die-bonding integrated films of example 2 were obtained in the same manner as in example 1, except that the thickness of the pressure-sensitive adhesive layer was changed from 8 μm to 10 μm.
Example 3 >
A plurality of dicing die-bonding integrated films of example 3 were obtained in the same manner as in example 2, except that the content of the crosslinking agent (C-1) at the time of producing the dicing film (pressure-sensitive adhesive layer) was changed from 2.0 parts by mass (solid content) to 4.0 parts by mass (solid content).
Comparative example 1 >
A plurality of dicing die-bonding integral films of comparative example 1 were obtained in the same manner as in example 2, except that the composition of the pressure-sensitive adhesive layer of example 2 of table 2 was changed to that of comparative example 1 of table 2.
Comparative example 2 >
A plurality of dicing die-bonding integral films of comparative example 1 were obtained in the same manner as in example 2, except that the composition of the pressure-sensitive adhesive layer of example 2 of table 2 was changed to that of comparative example 2 of table 2.
[ evaluation test ]
(1) Determination of the adhesive bond force (30 ° peel strength) of the pressure-sensitive adhesive layer with respect to the adhesive
The adhesive strength of the pressure-sensitive adhesive layer before irradiation with ultraviolet light with respect to the adhesive and the adhesive strength of the pressure-sensitive adhesive layer after irradiation with ultraviolet light were evaluated by measuring the peel strength at 30 °. The measurement sample of the pressure-sensitive adhesive layer before ultraviolet irradiation was obtained by cutting out a dicing die-bonding integrated film to a width of 25mm and a length of 100 mm. In the measurement sample of the pressure-sensitive adhesive layer after irradiation with ultraviolet rays, the cut crystal grains were bonded to the integral film to have a width of 25mm and a length of 100mm, and the film was irradiated with an illuminance of 70mW/cm by using an ultraviolet irradiation device (GS Yuasa Corporation, conveyor belt ultraviolet irradiation device CS 60) 2 An irradiation amount of 150mJ/cm 2 Obtained by ultraviolet rays (dominant wavelength: 365 nm). The amount of peel strength of the pressure-sensitive adhesive layer relative to the adhesive layer was measured from each measurement sample using a tensile tester (Kyowa Interface Science co., ltd. Manufactured by tensile tester "VPA-2"). The measurement conditions were set to a peeling angle of 30℃and a peeling speed of 600 mm/min. The sample was stored and the peel strength was measured at a temperature of 23℃and a relative humidity of 40%. The results are shown in table 2. The upper limit of measurement of the peel strength was "20N/25mm", and "> 20" in Table 2 indicates that the upper limit of measurement was exceeded.
(2) Determination of storage modulus of the cut film at-15 ℃
The cut film was subjected to dynamic viscoelasticity measurement to determine storage modulus at-15 ℃. The cut film was cut out to have a width of 4mm and a length of 40mm, and test pieces were obtained. The storage modulus of the cut test piece was measured under an automatic static load condition using a dynamic viscoelasticity measuring device (Rheogel E-4000 (Universal Building Materials co., ltd.) at a frequency of 1Hz, a heating rate of 3 ℃/min, a distance between chucks of 20 mm. The results are shown in table 2. In table 2, "-" indicates that measurement was not performed.
(3) Evaluation of pickup Property
A 12-inch wafer and dicing die bonding integrated film was prepared, and a dicing step, a wafer attaching step, a cooling expansion step, an ultraviolet irradiation step, and a pickup step were sequentially performed. In the dicing step, predetermined separation lines are formed on the wafer by stealth dicing into rectangular shapes of 12mm×6 mm. Thereafter, in order to adjust the thickness of the wafer, a back polishing process was performed to adjust the thickness of the wafer to 35 μm. In the wafer attaching step, wafers are attached to the adhesive layers of the dicing die bonding integrated film manufactured as described above at 70 ℃. In the cooling expansion step, a mold separator (manufactured by DISCO Corporation, model DDS-2300) was used, and cooling expansion and subsequent heat shrinkage were performed under the following conditions. Then, the mold was cleaned and dried by the cleaning mechanism in the mold separator under the following conditions.
(Cooling expansion conditions)
Cooling temperature: -15 ℃, cooling time: 90 seconds, spread: 10mm, expansion speed: 200mm/s, retention time after expansion: 3 seconds
(conditions of thermal shrinkage)
Heater temperature: 220 ℃, heater rotation speed: 5 °/second, spread: 8mm of
(cleaning conditions)
Cleaning time: 120 seconds, rotational speed: 600 revolutions per minute
(drying conditions)
Drying time: 60 seconds, rotational speed: 1500 revolutions per minute
In the ultraviolet irradiation step, an ultraviolet irradiation device (GS Yuasa Corporation, conveyor ultraviolet irradiation device CS 60) was used to irradiate an illuminance of 70mW/cm 2 An irradiation amount of 150mJ/cm 2 Ultraviolet rays (dominant wavelength: 365 nm). In the pick-up process, 20 chips with adhesive sheets were picked up under the following conditions.
(pickup Condition)
Chip mounter device: DB800-HSD (manufactured by Hitachi High-Technologies Corporation)
Push-up pin: EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7mm, front end shape: radius 350 μm hemisphere, manufactured by Micro Mechanics Co., ltd.)
Push-up height: 100 μm
Push-up speed: 10 mm/min
In addition, regarding the pick-up property, the case where the number of successful picks up was 20 (100%) was evaluated as "a", the case where the success rates of picks up were 16 to 19 was evaluated as "B", and the case where the success rates of picks up were 15 or less was evaluated as "C". The results are shown in table 2.
(4) Splittability of adhesive layer and peelability of chip with adhesive sheet
(3) After evaluating the pick-up property, the picked-up chip with the adhesive sheet was visually observed. Even when dicing die bonding integrated films of examples 1 to 3 and comparative examples 1 and 2 were used, the adhesive layer was excellent in the separation property. Next, the adhesive layer surface and the pressure-sensitive adhesive layer surface of the picked-up chip with the adhesive sheet were visually observed. In the case of using the dicing die-bonded integral film of comparative examples 1 and 2, the mark of peeling between the pressure-sensitive adhesive layer and the end of the chip with the adhesive sheet, which was generated between the expanding step (from step (D)) and the ultraviolet irradiation step ((E)), was confirmed to be transferred to the surface of the adhesive layer. On the other hand, in the case of using the dicing die-bonding integrated films of examples 1 to 3, no peeling trace between the end portion of the chip with the adhesive sheet and the pressure-sensitive adhesive layer was observed, and the peelability of the chip with the adhesive sheet was good.
TABLE 2
As shown in table 2, the die-bonded films of examples 1 to 3 were better in pick-up than the die-bonded films of comparative examples 1 and 2. From the above results, it was confirmed that the dicing die-bonding integrated film of the present invention can suppress the decrease in the pick-up property.
Symbol description
1-substrate layer, 3-pressure-sensitive adhesive layer, 5-adhesive layer, 7-dicing film, 8-chip with adhesive sheet, 10-dicing die bonding integral film, W-wafer.

Claims (6)

1. A method of manufacturing a semiconductor device, comprising:
(A) A step of preparing a dicing die-bonding integrated film, the dicing die-bonding integrated film comprising: a dicing film comprising a substrate layer and a pressure-sensitive adhesive layer composed of an ultraviolet-curable pressure-sensitive adhesive provided on the substrate layer; and an adhesive layer disposed on the pressure-sensitive adhesive layer of the dicing film;
(B) Dicing the wafer;
(C) Attaching the wafer to the adhesive layer of the dicing die-bonding integrated film;
(D) A step of obtaining a die with an adhesive sheet, wherein the die and the adhesive layer are singulated by expanding the base material layer under cooling conditions;
(E) A step of reducing an adhesive force of the pressure-sensitive adhesive layer with respect to the adhesive sheet-attached chip by irradiating ultraviolet rays to the pressure-sensitive adhesive layer;
(F) Picking up the chip with the adhesive sheet from the pressure-sensitive adhesive layer; a kind of electronic device with high-pressure air-conditioning system
(G) A step of mounting the picked-up chip with the adhesive sheet on a substrate or other chips,
in the dicing die-bonding integrated film, the adhesive force of the pressure-sensitive adhesive layer with respect to the adhesive layer measured at a temperature of 23 ℃ under conditions of a peeling angle of 30 DEG and a peeling speed of 600 mm/min is 15N/25mm or more.
2. The method for manufacturing a semiconductor device according to claim 1, wherein,
irradiating the pressure-sensitive adhesive layer with illuminance of 70mW/cm 2 An irradiation amount of 150mJ/cm 2 After ultraviolet rays of (2), the pressure-sensitive adhesive layer after ultraviolet rays are irradiated to the adhesive layer at a peeling angle of 30 DEG and a peeling speed of 600 mm/min at a temperature of 23 ℃ has an adhesive force of 1N/25mm or less.
3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein,
in the dicing die-bonding integrated film, the storage modulus of the dicing film at-15 ℃ is 100MPa or more.
4. A dicing die-bonding integrated film comprising:
a dicing film comprising a substrate layer and a pressure-sensitive adhesive layer composed of an ultraviolet-curable pressure-sensitive adhesive provided on the substrate layer; and an adhesive layer provided on the pressure-sensitive adhesive layer of the dicing film,
The pressure-sensitive adhesive layer has an adhesive force of 15N/25mm or more with respect to the adhesive layer, measured at a temperature of 23 ℃ under conditions of a peeling angle of 30 DEG and a peeling speed of 600 mm/min.
5. The dicing die-bonded monolithic film of claim 4, wherein,
irradiating the pressure-sensitive adhesive layer with illuminance of 70mW/cm 2 An irradiation amount of 150mJ/cm 2 After ultraviolet rays of (2), the pressure-sensitive adhesive layer after ultraviolet rays are irradiated to the adhesive layer at a peeling angle of 30 DEG and a peeling speed of 600 mm/min at a temperature of 23 ℃ has an adhesive force of 1N/25mm or less.
6. The dicing die-bonding integrated film according to claim 4 or 5, wherein,
the storage modulus of the cutting film at the temperature of minus 15 ℃ is more than 100 MPa.
CN202280027031.9A 2021-06-02 2022-05-30 Method for manufacturing semiconductor device and dicing die-bonding integrated film Pending CN117157733A (en)

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JP3408805B2 (en) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
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JP7059553B2 (en) * 2017-10-04 2022-04-26 昭和電工マテリアルズ株式会社 Adhesive tape for stealth dicing, dicing die bonding integrated tape, and method for manufacturing semiconductor devices
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