CN117136436A - 包括通过桥接件耦合的集成器件的封装件 - Google Patents

包括通过桥接件耦合的集成器件的封装件 Download PDF

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Publication number
CN117136436A
CN117136436A CN202280027060.5A CN202280027060A CN117136436A CN 117136436 A CN117136436 A CN 117136436A CN 202280027060 A CN202280027060 A CN 202280027060A CN 117136436 A CN117136436 A CN 117136436A
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Prior art keywords
interconnects
integrated device
metallization
bridge
coupled
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CN202280027060.5A
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English (en)
Chinese (zh)
Inventor
卫洪博
A·帕蒂尔
Z·王
M·徐
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Qualcomm Inc
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Qualcomm Inc
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Publication of CN117136436A publication Critical patent/CN117136436A/zh
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
CN202280027060.5A 2021-05-24 2022-04-25 包括通过桥接件耦合的集成器件的封装件 Pending CN117136436A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/328,666 US20220375838A1 (en) 2021-05-24 2021-05-24 Package comprising integrated devices coupled through a bridge
US17/328,666 2021-05-24
PCT/US2022/026200 WO2022250821A1 (en) 2021-05-24 2022-04-25 Package comprising integrated devices coupled through a bridge

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Publication Number Publication Date
CN117136436A true CN117136436A (zh) 2023-11-28

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US (1) US20220375838A1 (enExample)
EP (1) EP4348711A1 (enExample)
JP (1) JP2024521546A (enExample)
KR (1) KR20240013097A (enExample)
CN (1) CN117136436A (enExample)
BR (1) BR112023023632A2 (enExample)
WO (1) WO2022250821A1 (enExample)

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US12355000B2 (en) 2020-11-10 2025-07-08 Qualcomm Incorporated Package comprising a substrate and a high-density interconnect integrated device
US12469811B2 (en) 2021-03-26 2025-11-11 Qualcomm Incorporated Package comprising wire bonds coupled to integrated devices
KR102914981B1 (ko) * 2021-06-14 2026-01-21 삼성전자주식회사 반도체 패키지
KR20230011659A (ko) * 2021-07-14 2023-01-25 삼성전자주식회사 반도체 패키지 및 그의 제조 방법

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US9595496B2 (en) * 2014-11-07 2017-03-14 Qualcomm Incorporated Integrated device package comprising silicon bridge in an encapsulation layer
US9379090B1 (en) * 2015-02-13 2016-06-28 Qualcomm Incorporated System, apparatus, and method for split die interconnection
US10147682B2 (en) * 2015-11-30 2018-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Structure for stacked logic performance improvement
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US20220375838A1 (en) 2022-11-24
TW202249194A (zh) 2022-12-16

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