CN1171319C - 高频肖特基二极管 - Google Patents

高频肖特基二极管 Download PDF

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Publication number
CN1171319C
CN1171319C CNB021123241A CN02112324A CN1171319C CN 1171319 C CN1171319 C CN 1171319C CN B021123241 A CNB021123241 A CN B021123241A CN 02112324 A CN02112324 A CN 02112324A CN 1171319 C CN1171319 C CN 1171319C
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China
Prior art keywords
schottky diode
silicon
silicon epitaxy
high frequency
epitaxy layer
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CNB021123241A
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CN1388592A (zh
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叶志镇
张海燕
黄靖云
李蓓
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Zhejiang University ZJU
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Zhejiang University ZJU
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Abstract

本发明的高频肖特基二极管包括由重掺杂硅衬底和硅外延层构成的硅外延片，欧姆接触电极，周边围有二氧化硅的金属阻挡层和金属电极，其特征是所说的硅外延层的厚度为0.4μm～1μm，外延层掺杂浓度为1×1015cm-3～1×1017cm-3。本发明采用了外延层厚度为亚微米的超薄硅外延片及合适的掺杂浓度，能有效降低器件的串联电阻和结电容，大幅度提高截止频率，试验表明，可使截止频率高达40 GHz～80GHz，本发明的高频肖特基二极管拓宽了硅基器件在高频领域的应用，能广泛用于微波混频、检波及超高速开关电路中。

Description

高频肖特基二极管
                          技术领域
本发明涉及半导体器件。具体说涉及肖特基二极管。
                          背景技术
肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件，它包括由重掺杂硅衬底和轻掺杂的硅外延层构成的硅外延片，设在衬底背面的欧姆接触电极，在硅外延层的上方有周边围了二氧化硅的金属阻挡层，金属阻挡层上方设置有金属电极。在本发明作出前，传统的硅基肖特基二极管的硅外延层厚度均在2μm以上，它的截止频率较低，使应用场合受到极大限制，已无法适应通讯、微波技术的发展。
                          发明内容
本发明的目的是提供一种高频肖特基二极管。它包括由重掺杂硅衬底和硅外延层构成的硅外延片，欧姆接触电极，周边围有二氧化硅的金属阻挡层和金属电极，其特征是所说的硅外延层的厚度为0.4μm～1μm，外延层掺杂浓度为1×1015cm-3～1×1017cm-3。
本发明采用了外延层厚度为亚微米的超薄硅外延片及合适的掺杂浓度，能有效降低器件的串联电阻和结电容，大幅度提高截止频率，试验表明，可使截止频率高达40GHz～80GHz，本发明的高频肖特基二极管拓宽了硅基器件在高频领域的应用，能广泛用于微波混频、检波及超高速开关电路中。
                         附图说明
附图是高频肖特基二极管结构示意图。
                       具体实施方式
参照附图，高频肖特基二极管包括重掺杂硅衬底1和硅外延层3构成的硅外延片，设在衬底背面的欧姆接触电极2，硅外延层的厚度为0.4μm～1μm，硅外延层的掺杂浓度为1×1015cm-3～1×1017cm-3，通常，用磷掺杂或砷掺杂，在硅外延层的上方有周边围了二氧化硅6的金属阻挡层4，在金属阻挡层的上方设置有金属电极5。

Claims (2)

1.高频肖特基二极管，包括由重掺杂硅衬底(1)和硅外延层(3)构成的硅外延片，欧姆接触电极(2)，周边围有二氧化硅的金属阻挡层(4)和金属电极(5)，其特征是所说的硅外延层的厚度为0.4μm～1μm，外延层掺杂浓度为1×1015cm-3～1×1017cm-3。
2.按权利要求1所述的高频肖特基二极管，其特征是硅外延层的掺杂为磷或砷。
CNB021123241A 2002-06-26 2002-06-26 高频肖特基二极管 Expired - Fee Related CN1171319C (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB021123241A CN1171319C (zh) 2002-06-26 2002-06-26 高频肖特基二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB021123241A CN1171319C (zh) 2002-06-26 2002-06-26 高频肖特基二极管

Publications (2)

Publication Number Publication Date
CN1388592A CN1388592A (zh) 2003-01-01
CN1171319C true CN1171319C (zh) 2004-10-13

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825073B1 (en) * 2003-09-17 2004-11-30 Chip Integration Tech Co., Ltd. Schottky diode with high field breakdown and low reverse leakage current

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