CN1171319C - 高频肖特基二极管 - Google Patents
高频肖特基二极管 Download PDFInfo
- Publication number
- CN1171319C CN1171319C CNB021123241A CN02112324A CN1171319C CN 1171319 C CN1171319 C CN 1171319C CN B021123241 A CNB021123241 A CN B021123241A CN 02112324 A CN02112324 A CN 02112324A CN 1171319 C CN1171319 C CN 1171319C
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- Prior art keywords
- schottky diode
- silicon
- silicon epitaxy
- high frequency
- epitaxy layer
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 238000000407 epitaxy Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000005036 potential barrier Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Abstract
本发明的高频肖特基二极管包括由重掺杂硅衬底和硅外延层构成的硅外延片,欧姆接触电极,周边围有二氧化硅的金属阻挡层和金属电极,其特征是所说的硅外延层的厚度为0.4μm~1μm,外延层掺杂浓度为1×1015cm-3~1×1017cm-3。本发明采用了外延层厚度为亚微米的超薄硅外延片及合适的掺杂浓度,能有效降低器件的串联电阻和结电容,大幅度提高截止频率,试验表明,可使截止频率高达40 GHz~80GHz,本发明的高频肖特基二极管拓宽了硅基器件在高频领域的应用,能广泛用于微波混频、检波及超高速开关电路中。
Description
技术领域
本发明涉及半导体器件。具体说涉及肖特基二极管。
背景技术
肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件,它包括由重掺杂硅衬底和轻掺杂的硅外延层构成的硅外延片,设在衬底背面的欧姆接触电极,在硅外延层的上方有周边围了二氧化硅的金属阻挡层,金属阻挡层上方设置有金属电极。在本发明作出前,传统的硅基肖特基二极管的硅外延层厚度均在2μm以上,它的截止频率较低,使应用场合受到极大限制,已无法适应通讯、微波技术的发展。
发明内容
本发明的目的是提供一种高频肖特基二极管。它包括由重掺杂硅衬底和硅外延层构成的硅外延片,欧姆接触电极,周边围有二氧化硅的金属阻挡层和金属电极,其特征是所说的硅外延层的厚度为0.4μm~1μm,外延层掺杂浓度为1×1015cm-3~1×1017cm-3。
本发明采用了外延层厚度为亚微米的超薄硅外延片及合适的掺杂浓度,能有效降低器件的串联电阻和结电容,大幅度提高截止频率,试验表明,可使截止频率高达40GHz~80GHz,本发明的高频肖特基二极管拓宽了硅基器件在高频领域的应用,能广泛用于微波混频、检波及超高速开关电路中。
附图说明
附图是高频肖特基二极管结构示意图。
具体实施方式
参照附图,高频肖特基二极管包括重掺杂硅衬底1和硅外延层3构成的硅外延片,设在衬底背面的欧姆接触电极2,硅外延层的厚度为0.4μm~1μm,硅外延层的掺杂浓度为1×1015cm-3~1×1017cm-3,通常,用磷掺杂或砷掺杂,在硅外延层的上方有周边围了二氧化硅6的金属阻挡层4,在金属阻挡层的上方设置有金属电极5。
Claims (2)
1.高频肖特基二极管,包括由重掺杂硅衬底(1)和硅外延层(3)构成的硅外延片,欧姆接触电极(2),周边围有二氧化硅的金属阻挡层(4)和金属电极(5),其特征是所说的硅外延层的厚度为0.4μm~1μm,外延层掺杂浓度为1×1015cm-3~1×1017cm-3。
2.按权利要求1所述的高频肖特基二极管,其特征是硅外延层的掺杂为磷或砷。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB021123241A CN1171319C (zh) | 2002-06-26 | 2002-06-26 | 高频肖特基二极管 |
Applications Claiming Priority (1)
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CNB021123241A CN1171319C (zh) | 2002-06-26 | 2002-06-26 | 高频肖特基二极管 |
Publications (2)
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CN1388592A CN1388592A (zh) | 2003-01-01 |
CN1171319C true CN1171319C (zh) | 2004-10-13 |
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CNB021123241A Expired - Fee Related CN1171319C (zh) | 2002-06-26 | 2002-06-26 | 高频肖特基二极管 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6825073B1 (en) * | 2003-09-17 | 2004-11-30 | Chip Integration Tech Co., Ltd. | Schottky diode with high field breakdown and low reverse leakage current |
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2002
- 2002-06-26 CN CNB021123241A patent/CN1171319C/zh not_active Expired - Fee Related
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