CN117098403A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN117098403A
CN117098403A CN202310076640.XA CN202310076640A CN117098403A CN 117098403 A CN117098403 A CN 117098403A CN 202310076640 A CN202310076640 A CN 202310076640A CN 117098403 A CN117098403 A CN 117098403A
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CN
China
Prior art keywords
layer
tdmit
electrode layer
variable resistance
thickness
Prior art date
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Pending
Application number
CN202310076640.XA
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English (en)
Chinese (zh)
Inventor
尹宗珉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
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SK Hynix Inc
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Filing date
Publication date
Application filed by SK Hynix Inc filed Critical SK Hynix Inc
Publication of CN117098403A publication Critical patent/CN117098403A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN202310076640.XA 2022-05-20 2023-01-17 半导体装置及其制造方法 Pending CN117098403A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2022-0061822 2022-05-20
KR1020220061822A KR20230162219A (ko) 2022-05-20 2022-05-20 반도체 장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
CN117098403A true CN117098403A (zh) 2023-11-21

Family

ID=88772354

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310076640.XA Pending CN117098403A (zh) 2022-05-20 2023-01-17 半导体装置及其制造方法

Country Status (4)

Country Link
US (2) US12543324B2 (enExample)
JP (1) JP2023171210A (enExample)
KR (1) KR20230162219A (enExample)
CN (1) CN117098403A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230162219A (ko) * 2022-05-20 2023-11-28 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
KR20250001696A (ko) * 2023-06-29 2025-01-07 에스케이하이닉스 주식회사 셀렉터를 갖는 메모리 셀을 포함하는 반도체 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000653A (zh) * 2011-09-09 2013-03-27 瑞萨电子株式会社 非易失性半导体存储器件及其制造方法
US20160172366A1 (en) * 2014-12-16 2016-06-16 SanDisk Technologies, Inc. Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack
CN107531028A (zh) * 2015-04-10 2018-01-02 富士胶片株式会社 透明膜、偏振片以及图像显示装置
CN109728159A (zh) * 2017-10-30 2019-05-07 爱思开海力士有限公司 包括线形选择互连的半导体存储器件及包括其的电子系统
CN111326652A (zh) * 2018-12-14 2020-06-23 爱思开海力士有限公司 具有抗氧化电极的可变电阻半导体器件
DE102020108814A1 (de) * 2019-09-30 2021-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Abstandhalterplan und verfahren für mram

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101438588B1 (ko) 2010-07-01 2014-09-15 한국전자통신연구원 금속-반도체 융합 전자 회로 장치 및 이를 이용한 전자회로 시스템
KR20140108616A (ko) 2014-07-22 2014-09-12 서울대학교산학협력단 도전성 산화물을 전극으로 사용하는 커패시터 소자
US11107859B2 (en) 2019-08-05 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell with unipolar selectors
KR20230162219A (ko) * 2022-05-20 2023-11-28 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000653A (zh) * 2011-09-09 2013-03-27 瑞萨电子株式会社 非易失性半导体存储器件及其制造方法
US20160172366A1 (en) * 2014-12-16 2016-06-16 SanDisk Technologies, Inc. Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack
CN107531028A (zh) * 2015-04-10 2018-01-02 富士胶片株式会社 透明膜、偏振片以及图像显示装置
CN109728159A (zh) * 2017-10-30 2019-05-07 爱思开海力士有限公司 包括线形选择互连的半导体存储器件及包括其的电子系统
CN111326652A (zh) * 2018-12-14 2020-06-23 爱思开海力士有限公司 具有抗氧化电极的可变电阻半导体器件
DE102020108814A1 (de) * 2019-09-30 2021-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Abstandhalterplan und verfahren für mram

Also Published As

Publication number Publication date
US20230380192A1 (en) 2023-11-23
JP2023171210A (ja) 2023-12-01
US20260107476A1 (en) 2026-04-16
KR20230162219A (ko) 2023-11-28
US12543324B2 (en) 2026-02-03

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