JP2023171210A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP2023171210A
JP2023171210A JP2022207017A JP2022207017A JP2023171210A JP 2023171210 A JP2023171210 A JP 2023171210A JP 2022207017 A JP2022207017 A JP 2022207017A JP 2022207017 A JP2022207017 A JP 2022207017A JP 2023171210 A JP2023171210 A JP 2023171210A
Authority
JP
Japan
Prior art keywords
layer
variable resistance
tdmit
wiring
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022207017A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023171210A5 (enExample
Inventor
ジョン ミン ユン
Jong Min Yun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
SK Hynix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SK Hynix Inc filed Critical SK Hynix Inc
Publication of JP2023171210A publication Critical patent/JP2023171210A/ja
Publication of JP2023171210A5 publication Critical patent/JP2023171210A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2022207017A 2022-05-20 2022-12-23 半導体装置及びその製造方法 Pending JP2023171210A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2022-0061822 2022-05-20
KR1020220061822A KR20230162219A (ko) 2022-05-20 2022-05-20 반도체 장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
JP2023171210A true JP2023171210A (ja) 2023-12-01
JP2023171210A5 JP2023171210A5 (enExample) 2026-01-06

Family

ID=88772354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022207017A Pending JP2023171210A (ja) 2022-05-20 2022-12-23 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US12543324B2 (enExample)
JP (1) JP2023171210A (enExample)
KR (1) KR20230162219A (enExample)
CN (1) CN117098403A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230162219A (ko) * 2022-05-20 2023-11-28 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
KR20250001696A (ko) * 2023-06-29 2025-01-07 에스케이하이닉스 주식회사 셀렉터를 갖는 메모리 셀을 포함하는 반도체 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101438588B1 (ko) 2010-07-01 2014-09-15 한국전자통신연구원 금속-반도체 융합 전자 회로 장치 및 이를 이용한 전자회로 시스템
JP6180700B2 (ja) * 2011-09-09 2017-08-16 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びその製造方法
KR20140108616A (ko) 2014-07-22 2014-09-12 서울대학교산학협력단 도전성 산화물을 전극으로 사용하는 커패시터 소자
US9515079B2 (en) * 2014-12-16 2016-12-06 Sandisk Technologies Llc Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack
WO2016163554A1 (ja) * 2015-04-10 2016-10-13 富士フイルム株式会社 透明フィルム、偏光板、及び画像表示装置
KR20190048050A (ko) * 2017-10-30 2019-05-09 에스케이하이닉스 주식회사 라인 형태의 선택 배선을 가진 반도체 메모리 소자를 포함하는 전자 장치
KR102758501B1 (ko) 2018-12-14 2025-01-23 에스케이하이닉스 주식회사 내 산화성 전극을 가진 가변 저항성 반도체 소자
US11107859B2 (en) 2019-08-05 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell with unipolar selectors
US11283005B2 (en) * 2019-09-30 2022-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer scheme and method for MRAM
KR20230162219A (ko) * 2022-05-20 2023-11-28 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
US20230380192A1 (en) 2023-11-23
US20260107476A1 (en) 2026-04-16
CN117098403A (zh) 2023-11-21
KR20230162219A (ko) 2023-11-28
US12543324B2 (en) 2026-02-03

Similar Documents

Publication Publication Date Title
CN100502083C (zh) 相变化存储器的垂直侧壁有效引脚结构及其制造方法
US7820996B2 (en) Nonvolatile memory device made of resistance material and method of fabricating the same
US12495724B2 (en) Semiconductor device and method for fabricating the same
KR20180109287A (ko) 메모리 소자
US12464961B2 (en) Semiconductor device and method for fabricating the same
US20230133638A1 (en) Semiconductor device and method for fabricating the same
US20260107476A1 (en) Semiconductor device and method for fabricating the same
US12532672B2 (en) Semiconductor device including shield layer
US20260143975A1 (en) Semiconductor device and method for fabricating the same
US20240172569A1 (en) Semiconductor device and method for fabricating the same
US20230171967A1 (en) Semiconductor device and method for fabricating the same
US20240155953A1 (en) Semiconductor device and method for fabricating the same
US12396178B2 (en) Semiconductor device and method for fabricating the same
US20230142183A1 (en) Semiconductor device and method for fabricating the same
US12507418B2 (en) Semiconductor device and method for fabricating the same
TW202429550A (zh) 用於製造電極的方法和包括該電極的半導體裝置
US20240099157A1 (en) Variable resistance element and semiconductor device including the same
KR20250057552A (ko) 셀렉터, 이를 포함하는 반도체 장치 및 그 제조 방법
TW202434036A (zh) 半導體裝置以及用於製造該半導體裝置的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20251219