KR20230162219A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR20230162219A
KR20230162219A KR1020220061822A KR20220061822A KR20230162219A KR 20230162219 A KR20230162219 A KR 20230162219A KR 1020220061822 A KR1020220061822 A KR 1020220061822A KR 20220061822 A KR20220061822 A KR 20220061822A KR 20230162219 A KR20230162219 A KR 20230162219A
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KR
South Korea
Prior art keywords
layer
variable resistance
tdmit
electrode layer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020220061822A
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English (en)
Korean (ko)
Inventor
윤종민
Original Assignee
에스케이하이닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이하이닉스 주식회사 filed Critical 에스케이하이닉스 주식회사
Priority to KR1020220061822A priority Critical patent/KR20230162219A/ko
Priority to US18/066,080 priority patent/US12543324B2/en
Priority to JP2022207017A priority patent/JP2023171210A/ja
Priority to CN202310076640.XA priority patent/CN117098403A/zh
Publication of KR20230162219A publication Critical patent/KR20230162219A/ko
Priority to US19/418,597 priority patent/US20260107476A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020220061822A 2022-05-20 2022-05-20 반도체 장치 및 그 제조방법 Pending KR20230162219A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020220061822A KR20230162219A (ko) 2022-05-20 2022-05-20 반도체 장치 및 그 제조방법
US18/066,080 US12543324B2 (en) 2022-05-20 2022-12-14 Semiconductor device and method for fabricating the same
JP2022207017A JP2023171210A (ja) 2022-05-20 2022-12-23 半導体装置及びその製造方法
CN202310076640.XA CN117098403A (zh) 2022-05-20 2023-01-17 半导体装置及其制造方法
US19/418,597 US20260107476A1 (en) 2022-05-20 2025-12-12 Semiconductor device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020220061822A KR20230162219A (ko) 2022-05-20 2022-05-20 반도체 장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR20230162219A true KR20230162219A (ko) 2023-11-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020220061822A Pending KR20230162219A (ko) 2022-05-20 2022-05-20 반도체 장치 및 그 제조방법

Country Status (4)

Country Link
US (2) US12543324B2 (enExample)
JP (1) JP2023171210A (enExample)
KR (1) KR20230162219A (enExample)
CN (1) CN117098403A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230162219A (ko) * 2022-05-20 2023-11-28 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
KR20250001696A (ko) * 2023-06-29 2025-01-07 에스케이하이닉스 주식회사 셀렉터를 갖는 메모리 셀을 포함하는 반도체 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101438588B1 (ko) 2010-07-01 2014-09-15 한국전자통신연구원 금속-반도체 융합 전자 회로 장치 및 이를 이용한 전자회로 시스템
JP6180700B2 (ja) * 2011-09-09 2017-08-16 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びその製造方法
KR20140108616A (ko) 2014-07-22 2014-09-12 서울대학교산학협력단 도전성 산화물을 전극으로 사용하는 커패시터 소자
US9515079B2 (en) * 2014-12-16 2016-12-06 Sandisk Technologies Llc Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack
WO2016163554A1 (ja) * 2015-04-10 2016-10-13 富士フイルム株式会社 透明フィルム、偏光板、及び画像表示装置
KR20190048050A (ko) * 2017-10-30 2019-05-09 에스케이하이닉스 주식회사 라인 형태의 선택 배선을 가진 반도체 메모리 소자를 포함하는 전자 장치
KR102758501B1 (ko) 2018-12-14 2025-01-23 에스케이하이닉스 주식회사 내 산화성 전극을 가진 가변 저항성 반도체 소자
US11107859B2 (en) 2019-08-05 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell with unipolar selectors
US11283005B2 (en) * 2019-09-30 2022-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer scheme and method for MRAM
KR20230162219A (ko) * 2022-05-20 2023-11-28 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
US20230380192A1 (en) 2023-11-23
JP2023171210A (ja) 2023-12-01
US20260107476A1 (en) 2026-04-16
CN117098403A (zh) 2023-11-21
US12543324B2 (en) 2026-02-03

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