CN117081534A - Bulk acoustic wave filter packaging structure and preparation method thereof - Google Patents
Bulk acoustic wave filter packaging structure and preparation method thereof Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title abstract description 14
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 32
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 31
- 230000010354 integration Effects 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229920000927 poly(p-phenylene benzobisoxazole) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The application provides a bulk acoustic wave filter packaging structure and a preparation method thereof, wherein a first substrate, a first dielectric layer, a filter, a bonding layer, a radio frequency circuit layer and a second substrate are sequentially arranged in the bulk acoustic wave filter packaging structure, and the bonding layer is provided with a through groove which is surrounded by the filter, the bonding layer and the radio frequency circuit layer to form a cavity; the interconnection structure penetrates through the bonding layer to connect the filter and the radio frequency circuit layer, the second dielectric layer wraps the radio frequency circuit layer, and the lead-out structure penetrates through the second substrate to electrically connect and lead out the radio frequency circuit layer to the surface of the second substrate. According to the application, through the vertical stacking integrated method that the filter and the radio frequency circuit layer are bonded after being respectively and modularly prepared, the structure packaging area is reduced, the manufacturing cost is reduced, and the preparation efficiency is improved.
Description
Technical Field
The application belongs to the technical field of semiconductor integrated circuit manufacturing, and particularly relates to a bulk acoustic wave filter packaging structure and a preparation method thereof.
Background
With the development of communication technology, the working frequency of communication electromagnetic waves is further improved, the number of radio frequency front end modules integrated by a single mobile communication terminal is more and more, and the high frequency, integration and miniaturization of the radio frequency front end modules become main development trends.
At present, the main integration method of the radio frequency front end is transverse stacking, different devices in the module are interconnected through metal leads, the packaging area is large, and the area is further reduced difficultly.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solutions of the present application and is thus convenient for a person skilled in the art to understand, and it should not be construed that the above technical solutions are known to the person skilled in the art merely because these solutions are described in the background art section of the present application.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present application is to provide a bulk acoustic wave filter package structure and a method for manufacturing the same, which are used for solving the problems of poor heat conduction capability and poor mechanical strength of the bulk acoustic wave filter in the prior art.
In order to achieve the above object, the present application provides a bulk acoustic wave filter package structure including: the device comprises a first substrate, a first dielectric layer, a filter, a bonding layer, an interconnection structure, a radio frequency circuit layer, a wire leading-out structure, a second dielectric layer and a second substrate;
the first dielectric layer is arranged on the first substrate, the filter is arranged on the first dielectric layer, the bonding layer is arranged on the filter, the radio frequency circuit layer is arranged on the bonding layer, the bonding layer is provided with a through groove for exposing the filter below, and the through groove is surrounded by the filter, the bonding layer and the radio frequency circuit layer to form a cavity;
the interconnection structure penetrates through the bonding layer to connect the filter and the radio frequency circuit layer, and the filter is bonded with the radio frequency circuit layer through the bonding layer;
the radio frequency circuit layer is wrapped by the second dielectric layer, the second substrate is arranged on the radio frequency circuit layer, and the lead-out structure penetrates through the second substrate to electrically connect and lead out the radio frequency circuit layer to the surface of the second substrate.
Optionally, the filter includes reflection configuration, first electrode layer, piezoelectric layer, second electrode layer and extraction lead, first electrode layer set up in on the reflection configuration, piezoelectric layer set up in first electrode layer, second electrode layer set up in on the piezoelectric layer, one extraction lead runs through the piezoelectric layer will the electric connection of first electrode layer is drawn forth to the upper surface of piezoelectric layer, another extraction lead is drawn forth the second electrode layer makes the second electrode layer pass through interconnect structure with radio frequency circuit layer forms effective electric connection.
Optionally, the reflective structure is a cavity structure or a bragg reflective structure formed by alternating low acoustic impedance layers and high acoustic impedance layers.
Optionally, the radio frequency circuit layer comprises a radio frequency switch or/and an amplifier; when the radio frequency circuit layer comprises a radio frequency switch and an amplifier, the radio frequency switch is connected with one lead-out structure and led out to the surface of the second substrate, and the amplifier is connected with the other lead-out structure and led out to the surface of the second substrate; when the radio frequency circuit layer only comprises one of a radio frequency switch or an amplifier, the radio frequency switch or the amplifier is connected with one of the lead-out structures and led out to the surface of the second substrate.
Optionally, the material of the piezoelectric layer is single crystal aluminum nitride, or the material of the piezoelectric layer is single crystal aluminum nitride doped with one element of Sc, Y and Ta, or the material of the piezoelectric layer is single crystal aluminum nitride co-doped with Y and B.
Optionally, the interconnect structure is one of a bond layer via, a redistribution layer, or a metal pillar.
The application also provides a preparation method of the bulk acoustic wave filter packaging structure, which is used for preparing any one of the bulk acoustic wave filter packaging structures, and comprises the following steps:
providing a first substrate, and arranging a filter on the first substrate;
providing a second substrate, and arranging a radio frequency circuit layer on the second substrate;
a bonding layer is arranged between the filter and the radio frequency circuit layer, so that the filter and the radio frequency circuit layer are bonded through the bonding layer and are electrically connected through an interconnection structure penetrating through the bonding layer;
and arranging a lead-out structure penetrating through the second substrate to electrically connect and lead out the radio frequency circuit layer to the surface of the second substrate.
Optionally, the method for disposing the bonding layer between the filter and the radio frequency circuit layer includes: growing metal wires on the filter and the radio frequency circuit layer respectively; bonding materials are respectively arranged on the filter and the radio frequency circuit layer, and cover the upper surfaces of the filter and the radio frequency circuit layer and wrap the metal wires; thinning the bonding material to expose the metal lines; and bonding the filter and the radio frequency circuit layer through the bonding material, bonding the filter and the bonding material on the radio frequency circuit layer to form a bonding layer, and aligning and connecting the metal wire on the filter and the metal wire on the radio frequency circuit layer through the bonding layer to form an interconnection structure.
Alternatively, the method of thinning the bonding material is polishing or fly cutting.
Optionally, the method for disposing the bonding layer between the filter and the radio frequency circuit layer includes: setting a bonding layer on the filter, and setting an interconnection structure to penetrate through the bonding layer and lead out the electric connection of the filter to the bonding layer to obtain a surface; a metal wire is arranged on the surface of the radio frequency circuit layer; and bonding the filter with the radio frequency circuit layer through the bonding layer, and aligning the metal wire on the surface of the radio frequency circuit layer with the interconnection structure to realize electric connection.
As described above, the bulk acoustic wave filter packaging structure and the preparation method thereof of the application have the following beneficial effects:
according to the application, through the vertical stacking integrated method that the filter and the radio frequency circuit layer are bonded after being respectively and modularly prepared, the structure packaging area is reduced, the manufacturing cost is reduced, and the preparation efficiency is improved;
drawings
Fig. 1 is a schematic structural diagram of a device in an alternative example of a bulk acoustic wave filter package structure according to the present application, and the reflective structure is a cavity structure.
Fig. 2 is a schematic structural diagram of a device in an alternative example of the bulk acoustic wave filter package structure of the present application, and the reflective structure is a bragg reflective structure.
Fig. 3 is a schematic structural diagram of a device in an alternative example of the bulk acoustic wave filter package structure of the present application, and the reflective structure is a bragg reflective structure.
Fig. 4 is a schematic structural diagram of two devices and a reflective structure which is a cavity structure in an alternative example of the bulk acoustic wave filter package structure of the present application.
Fig. 5 is a schematic diagram of a bulk acoustic wave filter package structure according to an alternative embodiment of the present application, wherein the reflective structure is a bragg reflector.
Fig. 6 is a schematic diagram of a bulk acoustic wave filter package structure according to an alternative embodiment of the present application, wherein the reflective structure is a bragg reflector.
Fig. 7 is a schematic structural diagram of a method for manufacturing a bulk acoustic wave filter package according to an alternative example of step 1, in which a filter reflection structure is configured as a cavity structure.
Fig. 8 is a schematic structural diagram showing an alternative example of the method for manufacturing a bulk acoustic wave filter package structure according to step 1, in which the filter reflection structure is a bragg reflection structure.
Fig. 9 is a schematic structural diagram of a method for manufacturing a bulk acoustic wave filter package according to an alternative example of step 1, in which a filter reflection structure is provided as a bragg reflection structure.
Fig. 10 is a schematic structural diagram of a radio frequency circuit layer provided with two devices in an alternative example of the method step 2 of manufacturing a bulk acoustic wave filter package structure according to the present application.
Fig. 11 is a schematic structural diagram of a radio frequency circuit layer of an alternative example of the method step 2 for manufacturing a bulk acoustic wave filter package structure according to the present application.
Fig. 12 is a schematic structural diagram of a growing metal wire on a radio frequency circuit layer of a device in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure in step 3 of the present application.
Fig. 13 is a schematic structural diagram of a growth metal wire on a radio frequency circuit layer of two devices in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure of the present application, step 3.
Fig. 14 is a schematic structural diagram showing a method for manufacturing a bulk acoustic wave filter package according to an alternative example of step 3 of the method for manufacturing a bulk acoustic wave filter package according to the present application, in which a bonding material is disposed on a radio frequency circuit layer of a device.
Fig. 15 is a schematic structural diagram showing a method for manufacturing a bulk acoustic wave filter package structure according to an alternative example of step 3 of the present application, in which bonding materials are disposed on radio frequency circuit layers of two devices.
Fig. 16 is a schematic structural diagram of a thinned bonding material on a radio frequency circuit layer of a device in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure of the present application, step 3.
Fig. 17 is a schematic structural diagram of a thinned bonding material on radio frequency circuit layers of two devices in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure of the present application, step 3.
Fig. 18 is a schematic structural diagram showing a method for manufacturing a bulk acoustic wave filter package structure according to an alternative example of step 3, in which a bonding layer is formed on a radio frequency circuit layer of a device and a reflective structure is a cavity structure.
Fig. 19 is a schematic structural diagram showing a structure in which a bonding layer is formed on a radio frequency circuit layer of two devices and a reflective structure is a cavity structure in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure of the present application in step 3.
Fig. 20 is a schematic structural diagram showing a structure in which a bonding layer is formed on a radio frequency circuit layer of a device and a reflection structure is a bragg reflection structure in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure in step 3 of the present application.
Fig. 21 is a schematic structural diagram showing a structure in which a bonding layer is formed on a radio frequency circuit layer of two devices and a reflection structure is a bragg reflection structure in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure in step 3 of the present application.
Fig. 22 is a schematic structural diagram showing a structure in which a bonding layer is formed on a radio frequency circuit layer of a device and a reflection structure is a bragg reflection structure in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure in step 3 of the present application.
Fig. 23 is a schematic structural diagram showing a structure in which a bonding layer is formed on a radio frequency circuit layer of two devices and a reflection structure is a bragg reflection structure in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure in step 3 of the present application.
Fig. 24 is a schematic structural diagram showing a structure of disposing a bonding layer on a filter in an alternative example of step 3 of the method for manufacturing a bulk acoustic wave filter package structure according to the present application.
Fig. 25 is a schematic structural diagram showing a structure of disposing metal wires on a radio frequency circuit layer in an alternative example of the method step 3 of manufacturing a bulk acoustic wave filter package structure according to the present application.
Fig. 26 is a schematic structural diagram showing a device with a lead-out structure and a reflective structure in a cavity structure in an alternative example of step 4 of the method for manufacturing a bulk acoustic wave filter package structure according to the present application.
Fig. 27 is a schematic structural diagram showing a device with a lead-out structure and a bragg reflection structure in an alternative example of the method step 4 for manufacturing a bulk acoustic wave filter package structure according to the present application.
Fig. 28 is a schematic structural diagram showing a device with a lead-out structure and a bragg reflection structure in an alternative example of the method step 4 for manufacturing a bulk acoustic wave filter package structure according to the present application.
Fig. 29 is a schematic structural diagram showing two devices of a lead-out structure and a reflective structure of a cavity structure in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure of the present application in step 4.
Fig. 30 is a schematic structural diagram showing two devices of a lead-out structure and a bragg reflection structure in an alternative example of the method step 4 for manufacturing a bulk acoustic wave filter package structure according to the present application.
Fig. 31 is a schematic structural diagram showing two devices of a lead-out structure and a bragg reflection structure in an alternative example of the method for manufacturing a bulk acoustic wave filter package structure in step 4 of the present application.
Description of element reference numerals
1. A first substrate; 2. a first dielectric layer; 311. a cavity structure; 312. a Bragg reflection structure; 32. a first electrode layer, 33, a piezoelectric layer; 34. a second electrode layer; 35. leading out a wire; 4. a bonding layer; 41. a cavity; 42. a bonding material; 43. a metal wire; 5. an interconnect structure; 6. a radio frequency circuit layer; 7. a lead-out structure; 8. a second dielectric layer; 9. a second substrate.
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application.
As described in detail in the embodiments of the present application, the schematic drawings showing the structure of the apparatus are not partially enlarged to general scale, and the schematic drawings are merely examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures.
In the context of the present application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 1 to 6, the present application provides a bulk acoustic wave filter package structure, including: a first substrate 1, a first dielectric layer 2, a filter, a bonding layer 4, an interconnection structure 5, a radio frequency circuit layer 6, a wire lead-out structure 7, a second dielectric layer 8 and a second substrate 9;
the first dielectric layer 2 is arranged on the first substrate 1, the filter is arranged on the first dielectric layer 2, the bonding layer 4 is arranged on the filter, the radio frequency circuit layer 6 is arranged on the bonding layer 4, the bonding layer 4 is provided with a through groove for exposing the filter below, and the through groove is surrounded by the filter, the bonding layer 4 and the radio frequency circuit layer 6 to form a cavity 41;
the interconnection structure 5 penetrates through the bonding layer 4 to connect the filter and the radio frequency circuit layer 6, and the filter is bonded with the radio frequency circuit layer 6 through the bonding layer 4;
the radio frequency circuit layer 6 is wrapped by the second dielectric layer 8, the second substrate 9 is arranged on the radio frequency circuit layer 6, and the lead-out structure 7 penetrates through the second substrate 9 to electrically connect and lead out the radio frequency circuit layer 6 to the surface of the second substrate 9.
In one embodiment, the filter includes a reflective structure, a first electrode layer 32, a piezoelectric layer 33, a second electrode layer 34, and an outgoing lead 35, where the first electrode layer 32 is disposed on the reflective structure, the piezoelectric layer 33 is disposed on the first electrode layer 32, the second electrode layer 34 is disposed on the piezoelectric layer 33, one outgoing lead 35 penetrates the piezoelectric layer 33 to draw the electrical connection of the first electrode layer 32 to the upper surface of the piezoelectric layer 33, and the other outgoing lead 35 draws the second electrode layer 34 to form an effective electrical connection of the second electrode layer 34 with the radio frequency circuit layer 6 through the interconnection structure 5.
In one embodiment, the reflective structure is a cavity structure 311 as shown in fig. 1 and 4 or a bragg reflective structure 312 formed of alternating low acoustic impedance layers and high acoustic impedance layers as shown in fig. 2, 3, 5, and 6.
In an embodiment, the bragg reflecting structure 312 as shown in fig. 2 and 5 is layered over the first substrate 1, or the bragg reflecting structure 312 as shown in fig. 3 and 6 is provided only in the area under the first electrode layer 32.
In one embodiment, the material of the piezoelectric layer 33 is single crystal aluminum nitride, or the material of the piezoelectric layer 33 is single crystal aluminum nitride doped with one of Sc, Y, and Ta, or the material of the piezoelectric layer 33 is single crystal aluminum nitride co-doped with Y and B.
In one embodiment, the radio frequency circuit layer 6 includes radio frequency switches or/and amplifiers; as shown in fig. 4 to 6, when the radio frequency circuit layer 6 includes a radio frequency switch and an amplifier, the radio frequency switch is connected with one of the lead-out structures 7 and led out to the surface of the second substrate 9, and the amplifier is connected with the other of the lead-out structures 7 and led out to the surface of the second substrate 9; as shown in fig. 1-3, when the rf circuit layer 6 includes only one of an rf switch or an amplifier, the rf switch or the amplifier is connected to the lead-out structure 7 and led out to the surface of the second substrate 9.
In one embodiment, the interconnect structure 5 is one of a bond layer 4 via, a redistribution layer (RDL), or a metal pillar (pilar).
In one embodiment, the material of the first dielectric layer 2 and/or the second dielectric layer 8 is silicon dioxide.
As shown in fig. 7 to 31, the present application further provides a method for preparing a bulk acoustic wave filter package structure, where the method is used to prepare any one of the bulk acoustic wave filter package structures, and the method includes:
step 1: providing a first substrate 1, and arranging a filter on the first substrate 1;
step 2: providing a second substrate 9, and arranging a radio frequency circuit layer 6 on the second substrate 9;
step 3: a bonding layer 4 is arranged between the filter and the radio frequency circuit layer 6, so that the filter and the radio frequency circuit layer 6 are bonded through the bonding layer 4 and are electrically connected through an interconnection structure 5 penetrating through the bonding layer 4;
step 4: and a wire lead-out structure 7 penetrates through the second substrate 9 to electrically connect and lead out the radio frequency circuit layer 6 to the surface of the second substrate 9.
The method for manufacturing the bulk acoustic wave filter package of the present application will be described in detail with reference to the accompanying drawings, wherein, the above-mentioned sequence is not strictly representative of the sequence of the method for manufacturing the bulk acoustic wave filter package of the present application, and those skilled in the art can vary depending on the actual manufacturing steps.
First, as shown in fig. 7 to 9, step 1 is performed, a first substrate 1 is provided, and a filter is provided on the first substrate 1.
In one embodiment, a first dielectric layer 2 is provided surrounding the filter.
In one embodiment, as shown in fig. 7, the reflective structure in the filter is a cavity structure 311; or as shown in fig. 8, the reflective structure within the filter is a bragg reflective structure 312 that is layered over the first substrate 1; or as shown in fig. 9, the reflective structure within the filter is a bragg reflective structure 312 disposed only under the first electrode layer 32.
Then, step 2 is performed, providing a second substrate 9, and disposing the radio frequency circuit layer 6 on the second substrate 9.
In one embodiment, as shown in fig. 10, the radio frequency circuit layer 6 includes two devices, namely a radio frequency switch and an amplifier; or as shown in fig. 11, the radio frequency circuit layer 6 includes one of a radio frequency switch or an amplifier.
Next, step 3 is performed, in which a bonding layer 4 is disposed between the filter and the radio frequency circuit layer 6, so that the filter and the radio frequency circuit layer 6 are bonded through the bonding layer 4 and electrically connected through an interconnection structure 5 penetrating through the bonding layer 4.
In one embodiment, the bonding layer 4 is made of SiO 2 、SiN、Al 2 O 3 Any combination of one or more of BCB (benzocyclobutene resin), PI (polyimide), or PBO (poly (p-phenylene benzobisoxazole)). Preferably, the bonding layer 4 is made of SiO 2 。
In one embodiment, the method for disposing the bonding layer 4 between the filter and the radio frequency circuit layer 6 includes: as shown in fig. 12 and 13, metal lines 43 are grown on the filter and the radio frequency circuit layer 6, respectively; as shown in fig. 14 and 15, a bonding material 42 is disposed on the filter and the radio frequency circuit layer 6, respectively, and the bonding material 42 covers the upper surfaces of the filter and the radio frequency circuit layer 6 and wraps the metal wire 43; as shown in fig. 16 and 17, the bonding material 42 is thinned to expose the metal lines 43; as shown in fig. 18-23, the filter and the radio frequency circuit layer 6 are bonded by the bonding material 42, the bonding material 42 on the filter and the radio frequency circuit layer 6 is bonded to form a bonding layer 4, and the metal wire 43 on the filter and the metal wire 43 on the radio frequency circuit layer 6 are aligned and connected by the bonding layer 4 to form an interconnection structure 5. Specifically, fig. 12, 14, 16, 18, 20, and 22 are structures when only one device is included in the radio frequency circuit layer 6, fig. 13, 15, 17, 19, 21, and 23 are structures when two devices are included in the radio frequency circuit layer 6, the reflective structure of fig. 18-19 is the cavity structure 311, the reflective structure of fig. 20 and 21 is the bragg reflective structure 312 that is spread over the first substrate 1, and the reflective structure of fig. 22 and 23 is the bragg reflective structure 312 that is disposed only under the first electrode layer 32.
In one embodiment, the method of growing the metal line 43 on the filter is: and (3) spin-coating a polymer on the filter to serve as a mask layer, patterning the mask layer, growing a metal wire 43 at a position where a gap of the patterned mask layer reveals the filter, and removing the mask layer to obtain the metal wire 43.
In one embodiment, a second dielectric layer 8 is provided to encapsulate the radio frequency circuitry layer 6.
In one embodiment, the method for growing the metal wire 43 on the radio frequency circuit layer 6 is as follows: and spin-coating a polymer on the radio frequency circuit layer 6 as a mask layer, patterning the mask layer, patterning a preset part of the second dielectric layer 8, growing a metal wire 43 in a gap of the patterned second dielectric layer 8, and removing the mask layer to obtain the metal wire 43.
In one embodiment, the bonding material 42 is provided by spin coating or growth.
In one embodiment, the method of thinning the bonding material 42 is polishing or fly cutting (fly cutting).
In one embodiment, the method for disposing the bonding layer 4 between the filter and the radio frequency circuit layer 6 includes: as shown in fig. 24, a bonding layer 4 is disposed on the filter, and an interconnection structure 5 is disposed to penetrate through the bonding layer 4 and draw out the electrical connection of the filter to the bonding layer 4 to obtain a surface; as shown in fig. 25, a metal wire 43 is disposed on the surface of the radio frequency circuit layer 6; and bonding the filter with the radio frequency circuit layer 6 through the bonding layer 4, and aligning the metal wire 43 on the surface of the radio frequency circuit layer 6 with the interconnection structure 5 to realize electric connection.
In one embodiment, the bonding layer 4 is provided by spin coating or growth.
Finally, as shown in fig. 26-31, step 4 is performed, where a wire lead-out structure 7 is disposed through the second substrate 9 to electrically connect and lead out the radio frequency circuit layer 6 to the surface of the second substrate 9.
Specifically, fig. 26 to 28 are structures in which only one device is disposed on the rf circuit layer 6, fig. 29 to 31 are structures in which two devices are disposed on the rf circuit layer 6, the reflective structures in fig. 26 and 29 are cavity structures 311, the reflective structures in fig. 27 and 30 are bragg reflective structures 312 that are layered on the first substrate 1, and the reflective structures in fig. 29 and 31 are bragg reflective structures 312 that are disposed only under the first electrode layer 32.
In one embodiment, the method for disposing the conductive lead-out structure includes: and spin-coating a polymer on the second substrate 9 as a mask layer, patterning the mask layer, continuing to pattern the second substrate 9, growing a conductive material in the patterned gap of the second substrate 9, and removing the mask layer to obtain a conductive lead-out structure.
According to the application, the filter and the radio frequency circuit layer 6 are respectively prepared in a modularized manner, and the filter and the radio frequency circuit layer 6 are subjected to heterogeneous integration through a bonding process, so that modularized multifunctional density integration is realized, the manufacturing cost is reduced, and the performance advantage is realized; meanwhile, through the three-dimensional vertically stacked packaging structure, the area of the radio frequency front end module is effectively reduced, and the integration level of the chip is improved.
In summary, the bulk acoustic wave filter packaging structure and the preparation method thereof can reduce the packaging area of the structure, reduce the manufacturing cost and improve the preparation efficiency through the vertical stacking integrated method of bonding after the filter and the radio frequency circuit layer are respectively prepared in a modularized mode.
Therefore, the application effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present application and its effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the application. Accordingly, it is intended that all equivalent modifications and variations of the application be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (11)
1. A bulk acoustic wave filter package structure, characterized in that the bulk acoustic wave filter package structure comprises: the device comprises a first substrate, a first dielectric layer, a filter, a bonding layer, an interconnection structure, a radio frequency circuit layer, a wire leading-out structure, a second dielectric layer and a second substrate;
the first dielectric layer is arranged on the first substrate, the filter is arranged on the first dielectric layer, the bonding layer is arranged on the filter, the radio frequency circuit layer is arranged on the bonding layer, the bonding layer is provided with a through groove for exposing the filter below, and the through groove is surrounded by the filter, the bonding layer and the radio frequency circuit layer to form a cavity;
the interconnection structure penetrates through the bonding layer to connect the filter and the radio frequency circuit layer, and the filter is bonded with the radio frequency circuit layer through the bonding layer;
the radio frequency circuit layer is wrapped by the second dielectric layer, the second substrate is arranged on the radio frequency circuit layer, and the lead-out structure penetrates through the second substrate to electrically connect and lead out the radio frequency circuit layer to the surface of the second substrate.
2. The bulk acoustic wave filter package structure of claim 1, wherein the filter comprises a reflective structure, a first electrode layer, a piezoelectric layer, a second electrode layer, and an extraction lead, the first electrode layer is disposed on the reflective structure, the piezoelectric layer is disposed on the first electrode layer, the second electrode layer is disposed on the piezoelectric layer, one extraction lead extends through the piezoelectric layer to extract an electrical connection of the first electrode layer to an upper surface of the piezoelectric layer, and the other extraction lead extends out of the second electrode layer to effectively electrically connect the second electrode layer to the radio frequency circuit layer through the interconnect structure.
3. The bulk acoustic wave filter package structure of claim 2, wherein the reflective structure is a cavity structure or a bragg reflective structure formed of alternating low acoustic impedance layers and high acoustic impedance layers.
4. The bulk acoustic wave filter package structure of claim 1, wherein the radio frequency circuit layer comprises a radio frequency switch or/and an amplifier; when the radio frequency circuit layer comprises a radio frequency switch and an amplifier, the radio frequency switch is connected with one lead-out structure and led out to the surface of the second substrate, and the amplifier is connected with the other lead-out structure and led out to the surface of the second substrate; when the radio frequency circuit layer only comprises one of a radio frequency switch or an amplifier, the radio frequency switch or the amplifier is connected with one of the lead-out structures and led out to the surface of the second substrate.
5. The bulk acoustic wave filter package structure of claim 1, wherein the material of the piezoelectric layer is single crystal aluminum nitride, or the material of the piezoelectric layer is single crystal aluminum nitride doped with one of Sc, Y, ta, or the material of the piezoelectric layer is single crystal aluminum nitride co-doped with Y and B.
6. The bulk acoustic wave filter package structure of claim 1, wherein the interconnect structure is one of a bond layer via, a redistribution layer, or a metal pillar.
7. A method for manufacturing a bulk acoustic wave filter package structure, wherein the method is used for manufacturing the bulk acoustic wave filter package structure according to any one of claims 1 to 6, the method comprising:
providing a first substrate, and arranging a filter on the first substrate;
providing a second substrate, and arranging a radio frequency circuit layer on the second substrate;
a bonding layer is arranged between the filter and the radio frequency circuit layer, so that the filter and the radio frequency circuit layer are bonded through the bonding layer and are electrically connected through an interconnection structure penetrating through the bonding layer;
and arranging a lead-out structure penetrating through the second substrate to electrically connect and lead out the radio frequency circuit layer to the surface of the second substrate.
8. The method for manufacturing a bulk acoustic wave filter package structure according to claim 7, wherein the method for disposing the bonding layer between the filter and the radio frequency circuit layer comprises: growing metal wires on the filter and the radio frequency circuit layer respectively; bonding materials are respectively arranged on the filter and the radio frequency circuit layer, and cover the upper surfaces of the filter and the radio frequency circuit layer and wrap the metal wires; thinning the bonding material to expose the metal lines; and bonding the filter and the radio frequency circuit layer through the bonding material, bonding the filter and the bonding material on the radio frequency circuit layer to form a bonding layer, and aligning and connecting the metal wire on the filter and the metal wire on the radio frequency circuit layer through the bonding layer to form an interconnection structure.
9. The method of claim 8, wherein the method of thinning the bonding material is polishing or rapid cutting.
10. The method for manufacturing a bulk acoustic wave filter package structure according to claim 7, wherein the method for disposing the bonding layer between the filter and the radio frequency circuit layer comprises: setting a bonding layer on the filter, and setting an interconnection structure to penetrate through the bonding layer and lead out the electric connection of the filter to the bonding layer to obtain a surface; a metal wire is arranged on the surface of the radio frequency circuit layer; and bonding the filter with the radio frequency circuit layer through the bonding layer, and aligning the metal wire on the surface of the radio frequency circuit layer with the interconnection structure to realize electric connection.
11. The method of claim 7, wherein the polymer is spin-coated on the surfaces of the filter and the rf circuit layer, and the metal is patterned on the polymer to remove the polymer and form the metal line.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117478100A (en) * | 2023-12-25 | 2024-01-30 | 深圳新声半导体有限公司 | Multiplexer with resonant cavity acoustic wave filter and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117478100A (en) * | 2023-12-25 | 2024-01-30 | 深圳新声半导体有限公司 | Multiplexer with resonant cavity acoustic wave filter and preparation method thereof |
| CN117478100B (en) * | 2023-12-25 | 2024-04-16 | 深圳新声半导体有限公司 | Multiplexer with resonant cavity acoustic wave filter and preparation method thereof |
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