CN117080323B - Huge transfer method of Micro LED chip - Google Patents

Huge transfer method of Micro LED chip Download PDF

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Publication number
CN117080323B
CN117080323B CN202311286309.7A CN202311286309A CN117080323B CN 117080323 B CN117080323 B CN 117080323B CN 202311286309 A CN202311286309 A CN 202311286309A CN 117080323 B CN117080323 B CN 117080323B
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micro led
led chip
substrate
layer
led chips
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CN117080323A (en
Inventor
李雍
王怀厅
陈文娟
瞿澄
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Luohuaxin Display Technology Development Jiangsu Co ltd
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Luohuaxin Display Technology Development Jiangsu Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention relates to a huge transfer method of Micro LED chips, and relates to the technical field of semiconductor display. In the huge transfer method of Micro LED chips, the Micro LED chips on the first transfer substrate are packaged by using the packaging adhesive, and then cutting treatment is carried out along the packaging adhesive layer to form a plurality of groups of Micro LED chip modules, wherein the Micro LED chip modules are L-shaped, arc-shaped or one-shaped in the overlooking structure, so that the Micro LED chip modules can be transferred to the edge area or the corner area of the target substrate, and shadows at the edge and the corner of a corresponding display panel can be effectively eliminated through the arrangement of the Micro LED chip modules.

Description

Huge transfer method of Micro LED chip
Technical Field
The invention relates to the technical field of semiconductor display, in particular to a huge transfer method of Micro LED chips.
Background
The display panel generally includes an organic display panel and an inorganic display panel, the organic display panel is mainly driven by an electric field, and an organic semiconductor material and a light emitting material realize light emission after carrier injection and recombination. The organic display panel has the defects of difficult large size, short service life, complex process and the like. The display principle of the inorganic display panel is that the inorganic light emitting diode structure is designed to be thin-film, miniaturized and arrayed, then the micro light emitting units are transferred to the driving circuit substrate in batches, then the preparation of the protective layer and the upper electrode is completed by utilizing the physical vapor deposition and/or chemical vapor deposition process, and finally the upper substrate is packaged to obtain the micro light emitting unit display panel. In the existing micro light emitting unit display panel, the conventional mass transfer technology easily causes shadows at the edges and corners of the micro light emitting unit display panel, so that the display appearance of the display panel is poor.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a huge transfer method of Micro LED chips.
In order to achieve the above object, the present invention provides a method for transferring huge amounts of Micro LED chips, comprising:
providing a growth substrate, epitaxially growing an epitaxial functional layer on the growth substrate, and growing a conductive contact on the epitaxial functional layer;
cutting the growth substrate to form a plurality of separated Micro LED chips;
providing a first transfer substrate, transferring a plurality of Micro LED chips to the first transfer substrate, and then stretching the first transfer substrate to increase the spacing between adjacent Micro LED chips;
packaging the Micro LED chip by packaging adhesive, and curing the packaging adhesive;
then, thinning the Micro LED chip and the packaging adhesive to expose the back surface of the Micro LED chip;
cutting along the packaging adhesive layer to form a plurality of groups of Micro LED chip modules;
next, forming a peelable layer, wherein the peelable layer covers each group of Micro LED chip modules;
next, providing an adhesive layer on the peelable layer;
providing a second transfer substrate, selectively transferring the Micro LED chip module on the first transfer substrate to the second transfer substrate,
providing a target substrate, and transferring the Micro LED chip module on the second transfer substrate to a specific area of the target substrate;
the peelable layer and the adhesive layer on the Micro LED chip module on the target substrate are then removed.
As a preferred embodiment, the epitaxial functional layer includes a first conductivity type semiconductor layer, a quantum well light emitting layer, and a second conductivity type semiconductor layer.
As a preferable technical scheme, the growth substrate of the Micro LED chip is removed in the process of thinning the Micro LED chip and the packaging adhesive.
As a preferable technical scheme, the top view structure of the Micro LED chip module is L-shaped, arc-shaped or one-shaped.
Preferably, the specific area is an edge area or a corner area of the target substrate.
As a preferable technical scheme, before transferring the Micro LED chip module on the second transfer substrate to the edge area or the corner area of the target substrate, micro LED chips are first disposed on the main area of the target substrate.
As a preferable technical scheme, before the Micro LED chip module on the second transfer substrate is transferred to the edge area or the corner area of the target substrate, the Micro LED chip on the main area of the target substrate is wrapped by the encapsulation layer.
The invention has the beneficial effects that:
in the huge transfer method of Micro LED chips, the Micro LED chips on the first transfer substrate are packaged by using the packaging adhesive, and then cutting treatment is carried out along the packaging adhesive layer to form a plurality of groups of Micro LED chip modules, wherein the Micro LED chip modules are L-shaped, arc-shaped or one-shaped in the overlooking structure, so that the Micro LED chip modules can be transferred to the edge area or the corner area of the target substrate, and shadows at the edge and the corner of a corresponding display panel can be effectively eliminated through the arrangement of the Micro LED chip modules.
Drawings
Fig. 1 is a schematic diagram showing a structure of forming a plurality of separate Micro LED chips in an embodiment of the present invention.
Fig. 2 is a schematic diagram of a structure of transferring a plurality of Micro LED chips to a first transfer substrate according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a Micro LED chip packaged by a packaging adhesive according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a cutting process along a packaging adhesive layer to form a plurality of Micro LED chip modules according to an embodiment of the present invention.
Fig. 5 is a schematic diagram showing a structure of selectively transferring Micro LED chip modules on a first transfer substrate to a second transfer substrate according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of transferring a Micro LED chip module on a second transfer substrate to a specific area of a target substrate according to an embodiment of the present invention.
Description of the embodiments
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
As shown in fig. 1 to 6, the present embodiment provides a macro transfer method of Micro LED chips, including:
as shown in fig. 1, a growth substrate 100 is provided, an epitaxial functional layer 101 is epitaxially grown on the growth substrate 100, and a conductive contact (not shown) is grown on the epitaxial functional layer 101.
In a specific embodiment, the epitaxial functional layer 101 includes a first conductive type semiconductor layer, a quantum well light emitting layer, and a second conductive type semiconductor layer.
In a specific embodiment, the growth substrate 100 may be a sapphire substrate or a gallium nitride substrate, and the specific steps of growing the semiconductor functional layer on the growth substrate 100 are as follows: a buffer layer, an N-type semiconductor layer, an active light emitting layer, a P-type layer, and a current spreading layer are sequentially grown on the growth substrate 100, and a plurality of conductive contacts arranged in an array are formed on the current spreading layer.
In a specific embodiment, undoped gallium nitride is grown on the sapphire growth substrate 100 as a buffer layer, then an N-type doped gallium nitride layer is grown on the undoped gallium nitride layer as an electron injection layer, further a gallium nitride/indium gallium nitride superlattice structure is grown on the N-type gallium nitride layer as an active light emitting layer, wherein gallium nitride is used as a barrier layer, indium gallium nitride is used as a potential well layer, then a P-type doped gallium nitride layer is grown on the active light emitting layer as a hole injection layer, then a current expansion layer is grown on the P-type doped gallium nitride layer, wherein the material of the current expansion layer can be specifically indium tin oxide, a composite metal layer or aluminum doped zinc oxide, and then a metal material such as copper, aluminum, gold, silver, palladium and other suitable metals are deposited by a physical vapor deposition process or a chemical vapor deposition process to form the conductive contact.
As shown in fig. 1, the growth substrate 100 is subjected to a dicing process to form a plurality of separate Micro LED chips 200.
In a specific embodiment, the epitaxially grown growth substrate 100 may be placed on a carrier substrate, which may alternatively be a suitable rigid substrate such as a glass substrate, a metal substrate, a semiconductor substrate, or the like, and then cut by a laser or a cutter to form a plurality of separate Micro LED chips 200.
As shown in fig. 2, a first transfer substrate 300 is provided, a plurality of Micro LED chips 200 are transferred to the first transfer substrate 300, and then the first transfer substrate is stretched to increase the pitch between adjacent Micro LED chips 200.
In a specific embodiment, the material of the first transfer substrate 300 is a stretchable resin material.
In a specific embodiment, an adhesive layer is disposed on the first transfer substrate 300, and the Micro LED chip 200 transferred is adhered using the adhesive layer, and the adhesive layer may lose adhesion under high temperature or light irradiation so as to facilitate peeling of the first transfer substrate 300.
As shown in fig. 3, the Micro LED chip 200 is encapsulated by an encapsulation compound 400, and the encapsulation compound 400 is cured, and then the first transfer substrate 300 is peeled off; the Micro LED chip 200 and the encapsulation adhesive 400 are then thinned to expose the back surface of the Micro LED chip 200.
In a specific embodiment, the growth substrate 100 of the Micro LED chip 200 is removed during the thinning process of the Micro LED chip 200 and the encapsulation glue 400.
In a specific embodiment, the encapsulation compound 400 may be epoxy, and the encapsulation compound 400 is formed by a suitable process such as transfer molding, printing, spin coating, dispensing, and thermal compression.
In a specific embodiment, the Micro LED chip 200 and the encapsulation glue 400 are thinned by a grinding process.
As shown in fig. 4, a dicing process is then performed along the encapsulation glue layer 400 to form a plurality of Micro LED chip modules 500.
In a specific embodiment, a laser cutting process is performed along the encapsulation glue layer 400 to form a plurality of groups of Micro LED chip modules 500, and more specifically, the Micro LED chip modules 500 have an "L" shape, a circular arc shape, or a "one" shape in a top view. Through the laser cutting process, micro LED chip modules 500 with L-shaped, arc-shaped or one-shaped top view structures can be formed, shadows at edges and corners of corresponding display panels are eliminated by the Micro LED chip modules 500, and display effects are improved.
As shown in fig. 5, a peelable layer 601 is then formed, the peelable layer 601 covering each set of Micro LED chip modules 500; then, an adhesive layer 602 is arranged on the peelable layer 601, and the peelable layer 601 is arranged in advance before the adhesive layer 602 is arranged on the Micro LED chip module 500, and the peelable layer 601 is an adhesive layer losing adhesiveness under illumination or heating, so that after the peelable layer 601 is conveniently and subsequently transferred to a target substrate, the second transfer substrate is conveniently peeled off, and the adhesive layer does not remain on the surface of the Micro LED chip module 500.
Next, a second transfer substrate 700 is provided to selectively transfer the Micro LED chip module 500 on the first transfer substrate 300 to the second transfer substrate 700.
In a particular embodiment, the Micro LED chip module 500 is bonded to the second transfer substrate 700 using an adhesive layer 602.
As shown in fig. 6, a target substrate 800 is provided, and the Micro LED chip module 500 on the second transfer substrate 700 is transferred to a specific area of the target substrate 800; the peelable layer 601 and the adhesive layer 602 on the Micro LED chip module 500 on the target substrate 800 are then removed, thereby peeling the second transfer substrate 700.
In a specific embodiment, the specific area is an edge area or a corner area of the target substrate 800, that is, when the target substrate 800 is rectangular, the edge area or the corner area is at four edges or four corners of the target substrate 800, respectively.
In a specific embodiment, before the Micro LED chip module 500 on the second transfer substrate 700 is transferred to the edge area or the corner area of the target substrate 800, micro LED chips are disposed on the main area of the target substrate 800, and the Micro LED chips on the main area of the target substrate 800 are wrapped by a packaging layer.
In other preferred technical schemes, the method for transferring the huge amount of the Micro LED chip provided by the invention comprises the following steps:
providing a growth substrate, epitaxially growing an epitaxial functional layer on the growth substrate, and growing a conductive contact on the epitaxial functional layer;
cutting the growth substrate to form a plurality of separated Micro LED chips;
providing a first transfer substrate, transferring a plurality of Micro LED chips to the first transfer substrate, and then stretching the first transfer substrate to increase the spacing between adjacent Micro LED chips;
packaging the Micro LED chip by packaging adhesive, and curing the packaging adhesive;
then, thinning the Micro LED chip and the packaging adhesive to expose the back surface of the Micro LED chip;
cutting along the packaging adhesive layer to form a plurality of groups of Micro LED chip modules;
next, forming a peelable layer, wherein the peelable layer covers each group of Micro LED chip modules;
next, providing an adhesive layer on the peelable layer;
providing a second transfer substrate, selectively transferring the Micro LED chip module on the first transfer substrate to the second transfer substrate,
providing a target substrate, and transferring the Micro LED chip module on the second transfer substrate to a specific area of the target substrate;
the peelable layer and the adhesive layer on the Micro LED chip module on the target substrate are then removed.
In a preferred embodiment, the epitaxial functional layer includes a first conductivity type semiconductor layer, a quantum well light emitting layer, and a second conductivity type semiconductor layer.
In a more preferable technical scheme, the growth substrate of the Micro LED chip is removed in the process of thinning the Micro LED chip and the packaging adhesive.
In a more preferable technical scheme, the top view structure of the Micro LED chip module is L-shaped, arc-shaped or one-shaped.
In a more preferred embodiment, the specific region is an edge region or a corner region of the target substrate.
In a more preferable technical scheme, before transferring the Micro LED chip module on the second transfer substrate to the edge area or the corner area of the target substrate, micro LED chips are first arranged on the main area of the target substrate.
In a more preferable technical scheme, before the Micro LED chip module on the second transfer substrate is transferred to the edge area or the corner area of the target substrate, the Micro LED chip on the main area of the target substrate is wrapped by the encapsulation layer.
In the huge transfer method of Micro LED chips, the Micro LED chips on the first transfer substrate are packaged by using the packaging adhesive, and then cutting treatment is carried out along the packaging adhesive layer to form a plurality of groups of Micro LED chip modules, wherein the Micro LED chip modules are L-shaped, arc-shaped or one-shaped in the overlooking structure, so that the Micro LED chip modules can be transferred to the edge area or the corner area of the target substrate, and shadows at the edge and the corner of a corresponding display panel can be effectively eliminated through the arrangement of the Micro LED chip modules.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (7)

1. A mass transfer method of Micro LED chips is characterized in that: comprising the following steps:
providing a growth substrate, epitaxially growing an epitaxial functional layer on the growth substrate, and growing a conductive contact on the epitaxial functional layer;
cutting the growth substrate to form a plurality of separated Micro LED chips;
providing a first transfer substrate, transferring a plurality of Micro LED chips to the first transfer substrate, and then stretching the first transfer substrate to increase the spacing between adjacent Micro LED chips;
packaging the Micro LED chip by packaging adhesive, and curing the packaging adhesive;
then, thinning the Micro LED chip and the packaging adhesive to expose the back surface of the Micro LED chip;
cutting along the packaging adhesive layer to form a plurality of groups of Micro LED chip modules;
next, forming a peelable layer, wherein the peelable layer covers each group of Micro LED chip modules;
next, providing an adhesive layer on the peelable layer;
providing a second transfer substrate, selectively transferring the Micro LED chip module on the first transfer substrate to the second transfer substrate,
providing a target substrate, and transferring the Micro LED chip module on the second transfer substrate to a specific area of the target substrate;
the peelable layer and the adhesive layer on the Micro LED chip module on the target substrate are then removed.
2. The mass transfer method of Micro LED chips according to claim 1, wherein: the epitaxial functional layer includes a first conductivity type semiconductor layer, a quantum well light emitting layer, and a second conductivity type semiconductor layer.
3. The mass transfer method of Micro LED chips according to claim 1, wherein: and removing the growth substrate of the Micro LED chip in the process of thinning the Micro LED chip and the packaging adhesive.
4. The mass transfer method of Micro LED chips according to claim 1, wherein: the top view structure of the Micro LED chip module is L-shaped, arc-shaped or one-shaped.
5. The mass transfer method of Micro LED chips according to claim 1, wherein: the specific region is an edge region or a corner region of the target substrate.
6. The mass transfer method of Micro LED chips according to claim 5, wherein: and before the Micro LED chip module on the second transfer substrate is transferred to the edge area or the corner area of the target substrate, micro LED chips are arranged on the main area of the target substrate.
7. The method for mass transfer of Micro LED chips according to claim 6, wherein: and before the Micro LED chip module on the second transfer substrate is transferred to the edge area or the corner area of the target substrate, the Micro LED chip on the main area of the target substrate is wrapped by a packaging layer.
CN202311286309.7A 2023-10-08 2023-10-08 Huge transfer method of Micro LED chip Active CN117080323B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210045644A (en) * 2019-10-17 2021-04-27 (주)라이타이저 Manufacturing method of display apparatus and display apparatus manufactured by that method
CN113594309A (en) * 2021-10-08 2021-11-02 罗化芯显示科技开发(江苏)有限公司 Transfer method of micro light-emitting diode unit and micro light-emitting diode display panel
CN114628564A (en) * 2022-03-15 2022-06-14 韦尔通(厦门)科技股份有限公司 Encapsulation transfer method for LED
WO2023044256A1 (en) * 2021-09-20 2023-03-23 Applied Materials, Inc. Methods of parallel transfer of micro-devices using treatment
WO2023062139A1 (en) * 2021-10-15 2023-04-20 Aledia Method for transferring an optoelectronic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210045644A (en) * 2019-10-17 2021-04-27 (주)라이타이저 Manufacturing method of display apparatus and display apparatus manufactured by that method
WO2023044256A1 (en) * 2021-09-20 2023-03-23 Applied Materials, Inc. Methods of parallel transfer of micro-devices using treatment
CN113594309A (en) * 2021-10-08 2021-11-02 罗化芯显示科技开发(江苏)有限公司 Transfer method of micro light-emitting diode unit and micro light-emitting diode display panel
WO2023062139A1 (en) * 2021-10-15 2023-04-20 Aledia Method for transferring an optoelectronic device
CN114628564A (en) * 2022-03-15 2022-06-14 韦尔通(厦门)科技股份有限公司 Encapsulation transfer method for LED

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