CN104868835B - Light-focusing type photoelectric conversion device and its manufacturing method - Google Patents
Light-focusing type photoelectric conversion device and its manufacturing method Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The purpose of the present invention is to provide a kind of light-focusing type photoelectric conversion devices, without re-starting band gap design, the existing solar cell that can be also obtained using non-solar cell batteries manufacturer, it can be easily manufactured, heat dissipation design be easy, even and if improve concentration magnification can also inhibit decrease in efficiency.In order to solve described problem, the present invention provides a kind of light-focusing type photoelectric conversion device, has：Condenser；And photo-electric conversion element, be set to it is opposite with aforementioned condenser to position, which is characterized in that aforementioned Photon-Electron conversion element includes：Scattering light solar cell with through hole；And optically focused solar cell, it is configured in the aforementioned through hole of aforementioned scatter light solar cell；Also, aforementioned condenser is made of clear thermosetting resin, and aforementioned Photon-Electron conversion element is placed on external connection substrate.
Description
Technical field
The present invention relates to a kind of light-focusing type photoelectric conversion device and its manufacturing methods.
Background technology
Since previously, as photoelectric conversion device, the device of solar generating converted solar energy into electrical energy is able to reality
Using, it is cost effective in order to realize, and more generated energy is further obtained, a kind of light-focusing type photoelectric conversion device is practical
Change, the solar irradiation of aggregation is incident upon by solar cell device more smaller than the light-receiving area of condenser by condenser, comes
Obtain electric energy (for example, referring to patent document 1).
But previous light-focusing type photoelectric conversion device has the following problems：When fine day, and common silicon solar is used
The panel solar battery component (module) of battery is compared, and can get more generated energy, but can not almost be obtained when the cloudy day
Generated energy.
To solve the above-mentioned problems, it proposes a kind of light-focusing type photoelectric conversion device, is configured to, in the scattering light silicon sun
The more maqting type solar cells of optically focused compound semiconductor can be placed on battery, to will scatter light silicon solar cell and
The more maqting type solar cells of optically focused compound semiconductor are electrically connected (with reference to patent document 2).
[existing technical literature]
(patent document)
Patent document 1：Japanese Unexamined Patent Publication 2006-339522 bulletins；
Patent document 2：Japanese Unexamined Patent Publication 2009-147077 bulletins.
Invention content
To the light-focusing type photoelectric conversion device proposed in patent document 2, on one side with reference to Fig. 7, following explanation is carried out on one side.
In the figure 7, light-focusing type photoelectric conversion device 3 has：Silicon solar cell 100 scatters light solar cell；
And the more maqting type solar cells 200 of compound semiconductor, that is, the optically focused solar energy being formed on silicon solar cell 100
Battery.
In addition, the top of light-focusing type photoelectric conversion device 3 is light-receiving surface, top, which has, is converged to optically focused solar cell
That is the condenser (not shown) of the more maqting type solar cells of compound semiconductor 200.
Silicon solar cell 100 includes：P-type silicon substrate 113；P-type impurity doped region 114, is formed in p-type silicon substrate
113 light receiving side；And n-type impurity doped region 112, it is formed in the opposite side of the light-receiving surface of p-type silicon substrate 113；Its
In, p-type impurity doped region 114 includes：First emitter layer 114a；And the second emitter layer 114b, it is set to the first hair
Around emitter layer 114a.
It is formed with n-electrode 115 on the surface of the second emitter layer 114b, is formed on the surface of n-type impurity doped region 112
There is p-electrode 111.
Also, on the first emitter layer 114a, across a part of insulating film 117, it is formed with the bonding electrodes of L-shaped shape
116。
The more maqting type solar cells of compound semiconductor 200 have：The first compound semiconductor sun of light receiving side
It can battery 523；Second compound semiconductor solar cell 524 is located at the opposite side of light-receiving surface；And tunnel junction layer
(tunnel junction layer) 518 is located at the first compound semiconductor solar cell 523 and second compound half
Between conductor solar cell 524.
First compound semiconductor solar cell 523 and second compound semiconductor solar cell 524, pass through tunnel
Layer 518 is tied to engage.
First compound semiconductor solar cell 523, it is 1.8eV or more and 2eV below half to contain by band gap width
Conductor layer is formed by the first pn-junction 525, also, the first n-type compound semiconductor layer laminate 516 with light receiving side,
And the first p-type compound semiconductor layer laminate 517 of light-receiving surface opposite side.
First n-type compound semiconductor layer laminate 516 has multiple n-type compound semiconductor layers by lamination by is formed,
First p-type compound semiconductor layer laminate 517 has multiple p-type compound semiconductor layers by lamination by is formed.
Second compound semiconductor solar cell 524, it is 1.4eV or more by band gap width to contain and 1.6eV is below
Semiconductor layer is formed by the second pn-junction 526, also, the second n-type compound semiconductor layer laminate with light receiving side
519 and light-receiving surface opposite side the second p-type compound semiconductor layer laminate 520.
Second n-type compound semiconductor layer laminate 519 has multiple n-type compound semiconductor layers by lamination by is formed,
Second p-type compound semiconductor layer laminate 520 has multiple p-type compound semiconductor layers by lamination by is formed.
The surface of the light receiving side of first n-type compound semiconductor layer laminate 516 is provided with n-electrode 521, second
The surface opposite with light receiving side of p-type compound semiconductor layer laminate 520 is provided with p-electrode 522.
Moreover, by making the p-electrode 522 of the more maqting type solar cells of compound semiconductor 200 be arranged and being electrically connected
In on the bonding electrodes 116 of silicon solar cell 100, light-focusing type photoelectric conversion device 3 is formed.
But after the inventors of the present invention's research as a result, finding that light-focusing type photoelectric conversion device 3 illustrated among the above exists
Following problem.
First problem point is due to each subelement (that is, optically focused solar cell and scattering light solar cell)
Band gap difficult design, therefore, it is difficult to high efficiencies.
That is, using the more maqting type solar cells of compound semiconductor and both solar cells of silicon solar cell,
In order to improve generating efficiency, the main wavelength for needing adjustment to be absorbed using each solar cell, but which solar-electricity utilized
The adjustment which wavelength pond absorbs is more difficult, as a result, is difficult to carry out band gap design.
It is contemplated that above-mentioned influence in the following cases can be more apparent：When the more maqting type solar cells of compound semiconductor
Area become larger relative to the ratio (be generally less than 1) of the area of silicon solar cell, that is, it is more to become compound semiconductor
When the area of the silicon solar cell of the shadow of maqting type solar cell becomes larger.
Second Problem point is for non-solar cell batteries manufacturer, and manufacture is difficult.
That is, manufacturing device needs hundreds of millions of semiconductor manufacturing apparatuses, the little companies such as medium-sized and small enterprises to be difficult to carry out equipment
Investment is to manufacture difficulty.
Third problem is heat dissipation design difficulty.
That is, the optically focused of the above-mentioned light-focusing type photoelectric conversion device 3 more maqting types of solar cell, that is, compound semiconductor
Solar cell 200 is configured on silicon solar cell 100, since the heat generated by optically focused is from more maqting type sun
Energy battery 200 is spread to silicon solar cell 100, therefore the heat generated will pass through silicon solar cell 100 once, production in this way
Raw heat cannot directly loss to outside, therefore heat dissipation design is difficult.
4th problem is reduced because of temperature rise since the transfer efficiency of silicon solar cell is easy, can not
Improve concentration magnification.
That is, due to the major heat meeting generated in the more maqting type solar cells of compound semiconductor 200 by optically focused
Silicon solar cell 100 is diffused to, it therefore, can be because of the temperature rise of silicon solar cell 100 if concentration magnification is made to improve
And lead to the reduction of transfer efficiency.
Also, since the high temperature of part to generate stress distribution in silicon solar cell, from reliably and with long-term
There are also problems from the viewpoint of property.
The present invention is to complete in view of the above problems, and its purpose is to provide a kind of light-focusing type photoelectric conversion device, nothings
Band gap design, the existing solar cell that can be also obtained using non-solar cell batteries manufacturer, Ke Yirong need to be re-started
It changes places manufacture, heat dissipation design is easy, even and if improving concentration magnification and can also inhibit decrease in efficiency.
In order to achieve the above object, the present invention provides a kind of light-focusing type photoelectric conversion device, has：Condenser；And light
Electric transition element, the photo-electric conversion element be set to it is opposite with aforementioned condenser to position, which is characterized in that aforementioned Photon-Electron turn
Changing element includes：Scattering light solar cell with through hole；And optically focused solar cell, the optically focused solar energy
Battery is configured in the aforementioned through hole of aforementioned scatter light solar cell；Also, aforementioned condenser is by clear thermosetting tree
Fat is constituted, and aforementioned Photon-Electron conversion element is placed on external connection substrate.
So, become such a construction, optically focused is configured at scattering light solar cell with solar cell
In through hole, the scattering light for constituting photo-electric conversion element is placed in external connection with solar cell and optically focused with solar cell
On substrate, if the existing optically focused solar cell of combination and existing scattering light solar cell and be electrically connected, just
A kind of light-focusing type photoelectric conversion device can be become, to be not necessarily to re-start band gap design, non-solar cell batteries system as a kind of
Make quotient can also easy to manufacture construction.
Also, since optically focused is placed in solar cell on external connection substrate, it can make in the optically focused sun
The heat generated in energy battery directly diffuses to external connection substrate, to prevent heat to scattering light with too as one kind
Positive energy battery spreads and is easy to carry out the construction of heat dissipation design.
At this point, aforementioned scatter light solar cell and aforementioned optically focused solar cell can include monocrystalline silicon type, it is more
Crystal silicon type, film silicon type, hetero-junctions (hetero-junction with intrinsic thin-layer, HIT) type, copper and indium
Gallium selenium (copper indium gallium selenide, CIGS) type, cadmium telluride (cadmium telluride, CdTe) type,
At least 1 or more in coloring matter sensitization type, organic semiconductor type and the more maqting types of iii-v.
So, it as scattering light solar cell and optically focused solar cell, can properly use above-mentioned
The solar cell of type.
At this point, aforementioned transparent thermosetting resin is preferably the material containing silicone.
As the clear thermosetting resin for constituting condenser, the material containing silicone can be properly used.
At this point, on the surface of the condenser side of scattering light solar cell and optically focused solar cell, preferably
With resin layer or vitreous layer, the resin layer or vitreous layer contain in anti-light scattering material, fluorophor and quantum dot
At least one or more.
With such a configuration, scattering light solar cell and optically focused can be made to be carried with the generating efficiency of solar cell
It is high.
At this point, preferably on the face of the said external connecting substrate side of aforementioned scatter light solar cell, have anti-
Penetrate layer, the reflecting layer make through aforementioned scatter light with solar cell come light reflection or scattering.
With such a configuration, the generating efficiency of scattering solar cell can be made to improve.
At this point, aforementioned condenser and aforementioned Photon-Electron conversion element, are preferably integrally formed using clear thermosetting resin, are close
Envelope, for the clear thermosetting resin in the wave-length coverage of 400nm~800nm, the transmitance of light is 80% or more.
It with such a configuration, can be in the generating efficiency for maintaining scattering solar cell and optically focused solar cell
While, improve the moisture-proof of photo-electric conversion element.
Also, the present invention provides a kind of light-focusing type photoelectric conversion device, has：Condenser；And photo-electric conversion element,
The photo-electric conversion element be set to it is opposite with aforementioned condenser to position, which is characterized in that aforementioned Photon-Electron conversion element has：
Silicon solar cell as base material；And the more maqting type solar cells of iii-v, the more maqting type solar-electricities of the iii-v
Pond is configured in the through hole formed in aforementioned silicon solar cell；Also, aforementioned Photon-Electron conversion element is placed in outside and connects
It connects on substrate.
So, become such a construction, the optically focused more maqting type solar cells of solar cell, that is, iii-v
It is configured in the scattering light solar cell i.e. through hole of silicon solar cell, and constitutes the silicon solar of photo-electric conversion element
Battery and the more maqting type solar cells of iii-v are placed on external connection substrate, so if the iii-v that combination is existing
More maqting type solar cells and existing silicon solar cell and electric connection will become a kind of light-focusing type opto-electronic conversion and fill
It sets, without re-starting band gap design, non-solar cell batteries manufacturer can also be easily manufactured.
Also, since the more maqting type solar cells of iii-v are placed on external connection substrate, III- can be made
The heat generated in the more maqting type solar cells of V races directly diffuses to external connection substrate, so as to prevent heat to silicon
Solar cell is spread, and can inhibit the decrease in power generation efficiency of silicon solar cell, and can easily be done heat dissipation design.
At this point, aforementioned silicon solar cell, the more maqting type solar cells of aforementioned iii-v at least more than one
On the surface of aforementioned condenser side, be preferably provided with resin layer, the resin layer be mixed with the material comprising silicone resin with
The fluorophor of adjustable wavelength.
With such a configuration, at least one of the more maqting type solar cells of silicon solar cell, iii-v can be made
Generating efficiency improve.
At this point, in the aforementioned poly- of at least more than one of silicon solar cell or the more maqting type solar cells of iii-v
On the surface of light microscopic side, it is preferably provided with vitreous layer, the vitreous layer is mixed with using polysilazane as main component
Material and adjustable wavelength fluorophor and formed.
With such a configuration, at least the one of the more maqting type solar cells of silicon solar cell, iii-v can also be made
The generating efficiency of person improves.
Also, the present invention provides a kind of manufacturing method of light-focusing type photoelectric conversion device, is the above-mentioned light-focusing type of manufacture
The method of photoelectric conversion device, which is characterized in that by aforementioned Photon-Electron conversion element it is integrated with said external connecting substrate after,
Using mold, using aforementioned transparent thermosetting resin, in aforementioned Photon-Electron conversion element and said external connecting substrate opposite side
One side, make condenser molding hardening.
The condenser of above-mentioned light-focusing type photoelectric conversion device can be manufactured using such manufacturing method.
At this point, can be by the processing method of at least one or more in perforation, laser and etching, it will be aforementioned to be formed
Scatter the light aforementioned through hole formed in solar cell.
When being formed in the aforementioned scatter light aforementioned through hole formed in solar cell, it can properly use above-mentioned
Processing method.
At this time, it is preferable that using clear thermosetting resin, pass through injection molding, transfer formation, compression forming and ejection formation
In at least one or more mode, aforementioned condenser and aforementioned Photon-Electron conversion element are integrally formed, sealing, the transparent heat
For thermosetting resin in the wave-length coverage of 400nm~800nm, the transmitance of light is 80% or more.
When condenser and aforementioned Photon-Electron conversion element are integrally formed, are sealed, above-mentioned manufacturer can be properly used
Method.
Also, the present invention provides a kind of manufacturing method of light-focusing type photoelectric conversion device, is the above-mentioned light-focusing type of manufacture
The method of photoelectric conversion device, which is characterized in that in being molded by film adhered, spraying, spin coating, printing, vapor deposition and mold
The mode of at least one or more, to form aforementioned resin layer or vitreous layer.
The resin layer or the nature of glass of above-mentioned light-focusing type photoelectric conversion device can be manufactured using such manufacturing method
Layer.
Also, the present invention provides a kind of manufacturing method of light-focusing type photoelectric conversion device, is the above-mentioned light-focusing type of manufacture
The method of photoelectric conversion device, which is characterized in that by aforementioned Photon-Electron conversion element it is integrated with said external connecting substrate after,
Using mold, and using the material for including transparent silicone resin, in aforementioned Photon-Electron conversion element and said external connecting substrate
The one side of opposite side makes condenser molding hardening.
The condenser of above-mentioned light-focusing type photoelectric conversion device can be manufactured using such manufacturing method.
As described above, according to the present invention, become such a construction, optically focused is configured at scattering light with too with solar cell
In the through hole of positive energy battery, the scattering light for constituting photo-electric conversion element is loaded with solar cell and optically focused with solar cell
In on external connection substrate, if optically focused solar cell and existing scattering light solar cell and electricity that combination is existing
Property connection, will become a kind of light-focusing type photoelectric conversion device, there is no need to re-start band gap design, non-solar cell batteries system
Making quotient can also be easily manufactured.
Also, according to the present invention, since optically focused is placed in solar cell on external connection substrate, can make to gather
Light directly diffuses to external connection substrate with the heat generated in solar cell, so as to prevent heat to scattering light with too
Positive energy battery diffusion, and it is easy to carry out heat dissipation design.
Description of the drawings
Fig. 1 is the sectional view and stereogram for indicating the light-focusing type photoelectric conversion device of the present invention.
Fig. 2 is the sectional view for the condenser for indicating the light-focusing type photoelectric conversion device of the present invention.
Fig. 3 is the sectional view and stereogram for the concrete example for indicating the light-focusing type photoelectric conversion device of the present invention.
Fig. 4 is the sectional view of the condenser for the concrete example for indicating the light-focusing type photoelectric conversion device of the present invention.
Fig. 5 is by the more maqting type solar cells of iii-v of the concrete example of the light-focusing type photoelectric conversion device of the present invention
The sectional view of amplification.
Fig. 6 is the sectional view for the light-focusing type photoelectric conversion device for indicating comparative example 1.
Fig. 7 is the sectional view for indicating previous light-focusing type photoelectric conversion device.
Wherein, the reference numerals are as follows：
1,2,3,4 light-focusing type photoelectric conversion device；
10 scattering light solar cells；
10 ' silicon solar cells (scattering light solar cell)；
11 p-electrodes；
12 n-type impurity doped regions；
13 p-type silicon substrates；
14 p-type impurity doped regions；
15 n-electrodes；
16 through holes；
20 optically focused solar cells；
The more maqting type solar cells of 20 ' iii-vs (optically focused solar cell)；
21 p-electrodes；
22 second p-type Group III-V compound semiconductor layer laminates；
22a p-type AlGaAs base layers；
22b p-type InGaP back surface field layers；
22c p-type GaAs contact layers；
23 second n-type Group III-V compound semiconductor layer laminates；
23a N-shaped AlInP Window layers；
23b N-shaped AlGaAs emitter layers；
24 tunnel junction layers；
24a p-type AlGaAs tunnel junction layers；
24b N-shaped AlInGaP tunnel junction layers；
25 first p-type Group III-V compound semiconductor layer laminates；
25a p-type AlInGaP base layers；
25b p-type AlInP back surface field layers；
26 first n-type Group III-V compound semiconductor layer laminates；
26a N-shaped GaAs contact layers；
26b N-shaped AlInP Window layers；
26c N-shaped AlInGaP emitter layers；
27 second Group III-V compound semiconductor solar cells；
28 first Group III-V compound semiconductor solar cells；
29 n-electrodes；
30 photo-electric conversion elements；
31 external connection substrates；
32 matrixes；
33 external connecting wires；
34 condensers；
35 first pn-junctions；
36 second pn-junctions；
41 external connection substrates；
42 matrixes；
43 external connecting wires；
100 silicon solar cells (scattering light solar cell)；
111 p-electrodes；
112 n-type impurity doped regions；
113 p-type silicon substrates；
114 p-type impurity doped regions；
The first emitter layers of 114a；
The second emitter layers of 114b；
115 n-electrodes；
116 bonding electrodes；
117 insulating films；
The more maqting type solar cells of 200 compound semiconductors (optically focused solar cell)；
516 first n-type compound semiconductor layer laminates；
517 first p-type compound semiconductor layer laminates；
518 tunnel junction layers；
519 second n-type compound semiconductor layer laminates；
520 second p-type compound semiconductor layer laminates；
521 n-electrodes；
522 p-electrodes；
523 first compound semiconductor solar cells；
524 second compound semiconductor solar cells；
525 first pn-junctions；
526 second pn-junctions.
Specific implementation mode
Hereinafter, for the present invention, as an example of embodiment, it is described in detail while with reference to attached drawing,
But embodiment that the present invention is not limited thereto.
As described above, in the light-focusing type photoelectric conversion device proposed in patent document 2, there are following problems.
First problem point is due to each subelement (that is, optically focused solar cell and scattering light solar cell)
Band gap difficult design, therefore, it is difficult to high efficiencies.
Second Problem point is for non-solar cell batteries manufacturer, and manufacture is difficult.
Third problem is heat dissipation design difficulty.
4th problem is reduced because of temperature rise since the transfer efficiency of silicon solar cell is easy, can not
Improve concentration magnification.
Therefore, the inventors of the present invention make great efforts to study repeatedly to light-focusing type photoelectric conversion device, the light-focusing type opto-electronic conversion dress
It sets without re-starting band gap design, non-solar cell batteries manufacturer can also be easily manufactured, and heat dissipation design is easy, even and if
Decrease in efficiency can also be inhibited by improving concentration magnification.
Itself as a result, it has been found that, become such a construction, by optically focused with solar cell be configured at scattering light solar-electricity
In the through hole in pond, the scattering light for constituting photo-electric conversion element is placed in outside with solar cell and optically focused with solar cell
In connecting substrate, so if the existing optically focused solar cell of combination and existing scattering light solar cell and electrical
Connection will become a kind of light-focusing type photoelectric conversion device, without re-starting band gap design, non-solar cell batteries manufacture
Quotient can also be easily manufactured, and further, since optically focused is placed in solar cell on external connection substrate, can make
Optically focused directly diffuses to external connection substrate with the heat generated in solar cell, so as to prevent heat from being used to scattering light
Solar cell is spread, and is easy to carry out heat dissipation design, so far completes the present invention.
Hereinafter, one side referring to Fig.1~Fig. 2, on one side illustrates the light-focusing type photoelectric conversion device of the present invention.
In Fig. 1, (a) is the sectional view for indicating the light-focusing type photoelectric conversion device 1 of the present invention, (b) indicates the present invention
The stereogram of light-focusing type photoelectric conversion device 1, Fig. 2 are the condensers 34 for indicating the light-focusing type photoelectric conversion device 1 of the present invention
Sectional view.
In Fig. 1, light-focusing type photoelectric conversion device 1 has：Scattering light solar cell 10 with through hole 16；
And photo-electric conversion element 30, it includes the optically focused solar energy being configured in the through hole 16 of scattering light solar cell 10
Battery 20.
Moreover, the top of light-focusing type photoelectric conversion device 1 is light-receiving surface, top has condenser 34, the condenser 34
Clear thermosetting resin by being converged to optically focused solar cell 20 is constituted (with reference to Fig. 2).
The scattering light for constituting photo-electric conversion element 30 is loaded with solar cell 10 and optically focused with solar cell 20 respectively
In on the external connection substrate 31 being made of matrix 32 and external connecting wires 33, and it is connected to across external connection substrate 31
It is external.
Since the light-focusing type photoelectric conversion device 1 of the present invention is such a construction, optically focused is configured with solar cell 20
In in the through hole 16 of scattering light solar cell 10, constituting the scattering light of photo-electric conversion element 30 with 10 He of solar cell
Optically focused solar cell 20 is placed on external connection substrate 31, so if the existing optically focused solar cell of combination with
Existing scattering light solar cell is simultaneously electrically connected, and will become a kind of light-focusing type photoelectric conversion device, to become one
Kind without re-start band gap design, non-solar cell batteries manufacturer can also easy to manufacture construction.
Also, since in the light-focusing type photoelectric conversion device 1 of the present invention, optically focused solar cell 20 is placed in outside and connects
It connects on substrate 31, therefore optically focused can be made directly to diffuse to external connection substrate 31 with the heat generated in solar cell 20,
To prevent heat from being spread to scattering light solar cell 10 as one kind, and it is easy to carry out the structure of heat dissipation design
It makes.
Scattering light solar cell 10 and optically focused solar cell 20 can be comprising monocrystalline silicon type, polycrystalline silicon type, thin
At least 1 in film silicon type, HIT types, CIGS types, CdTe types, coloring matter sensitization type, organic semiconductor type and the more maqting types of iii-v
Kind or more.
So, it as scattering light solar cell and optically focused solar cell, can properly use above-mentioned
The solar cell of type.
The clear thermosetting resin for constituting condenser 34 is preferably the material containing silicone.
As the clear thermosetting resin for constituting condenser, the material containing silicone can be properly used.
On the surface of 34 side of condenser of scattering light solar cell 10 and optically focused solar cell 20, preferably
With resin layer or vitreous layer, the resin layer or vitreous layer contain in anti-light scattering material, fluorophor and quantum dot
At least one or more.
With such a configuration, the generating efficiency of scattering solar cell 10 and optically focused solar cell 20 can be made
It improves.
Can be attached, be sprayed film, spin coating, printing, vapor deposition and mold molding at least one of more than by way of,
To form above-mentioned resin layer or vitreous layer.
Preferably, there is reflecting layer on the face of 31 side of external connection substrate of scattering light solar cell 10, it is described
Reflecting layer makes the light reflection through scattering light solar cell 10 or scattering.
With such a configuration, the generating efficiency of scattering solar cell 10 can be made to improve.
Preferably, using clear thermosetting resin, condenser 10 is made to be integrally formed with photo-electric conversion element 30, sealing, institute
Clear thermosetting resin is stated in the wave-length coverage of 400nm~800nm, the transmitance of light is 80% or more.
It with such a configuration, can be in the power generation for maintaining scattering solar cell 10 and optically focused solar cell 20
While efficiency, the moisture-proof of photo-electric conversion element is improved.
By photo-electric conversion element 30 it is integrated with external connection substrate 31 after, using mold, utilize clear thermosetting tree
Fat can make the molding hardening of condenser 34 in the one side with 31 opposite side of external connection substrate of photo-electric conversion element 30, to
Form condenser 34.
The condenser 34 of light-focusing type photoelectric conversion device 1 can be manufactured using such manufacturing method.
It can be processed by using at least one or more in perforation, laser, etching, it will be in the scattering light sun to be formed
The aforementioned through hole 16 formed in energy battery 10.
When being formed in the scattering light aforementioned through hole formed in solar cell, above-mentioned add can be properly used
Work method.
Preferably, using clear thermosetting resin, by injection molding, transfer formation, compression forming and ejection formation extremely
Condenser and photo-electric conversion element are integrally formed, sealing by few a kind or more of method, and the clear thermosetting resin is in 400nm
In the wave-length coverage of~800nm, the transmitance of light is 80% or more.
When condenser and photo-electric conversion element are integrally formed, are sealed, above-mentioned manufacturing method can be properly used.
Then, on one side with reference to Fig. 3~Fig. 5, on one side to the light-focusing type in the light-focusing type photoelectric conversion device 1 of the present invention
Photoelectric conversion device 2 illustrates, and the light-focusing type photoelectric conversion device 2 uses silicon solar cell 10 ' to be used as scattering light
Solar cell, and the more maqting type solar cells 20 ' of iii-v is used to be used as optically focused solar cell.
In Fig. 3, (a) is the sectional view for indicating the light-focusing type photoelectric conversion device 2 of the present invention, (b) is painted the present invention
The stereogram of light-focusing type photoelectric conversion device 2, Fig. 4 are the condensers 34 for indicating the light-focusing type photoelectric conversion device 2 of the present invention
Sectional view, Fig. 5 are the sectional views for indicating to amplify in the more maqting type solar cells 20 ' of iii-v.
In figure 3, light-focusing type photoelectric conversion device 2 has photo-electric conversion element 30, and the photo-electric conversion element 30 includes：
Silicon solar cell 10 ' with through hole 16；And the more maqting type solar cells 20 ' of iii-v, it is configured at the silicon sun
In the through hole 16 of energy battery 10 '.
Moreover, the top of light-focusing type photoelectric conversion device 2 is light-receiving surface, top has condenser 34, the condenser 34
It is converged to the more maqting type solar cells 20 ' (with reference to Fig. 4) of iii-v.
Constitute the silicon solar cell 10 ' and the more difference of maqting type solar cells 20 ' of iii-v of photo-electric conversion element 30
It is placed in the external connection substrate 31 being made of matrix 32 and external connecting wires 33, and is connected across external connection substrate 31
In outside.
Silicon solar cell 10 ' includes：P-type silicon substrate 13；P-type impurity doped region 14 is formed in p-type silicon substrate 13
34 side of condenser；And n-type impurity doped region 12, it is formed in 31 side of external connection substrate of p-type silicon substrate 13.
N-electrode 15 is formed on the surface of p-type impurity doped region 14, on the surface of n-type impurity doped region 12
It is formed with p-electrode 11.
Moreover, silicon solar cell 10 ' is electrically connected in a manner of so that p-electrode 11 is contacted with external connecting wires 33
External connection substrate 31.
The more maqting type solar cells of iii-v 20 ' have：First Group III-V compound semiconductor of 34 side of condenser
Solar cell 28；Second Group III-V compound semiconductor solar cell 27 is located at 31 side of external connection substrate；And tunnel
Road knot layer 24 is located at the first Group III-V compound semiconductor solar cell 28 and the second Group III-V compound semiconductor too
Between positive energy battery 27.
First Group III-V compound semiconductor solar cell 28 and the second Group III-V compound semiconductor solar-electricity
Pond 27 is bonded together by tunnel junction layer 24.
Tunnel junction layer 24, for example, as shown in figure 5, including p-type AlGaAs tunnel junction layers 24a and N-shaped AlInGaP tunnel knots
Layer 24b.
First Group III-V compound semiconductor solar cell 28, containing by band gap width be 1.8eV or more and 2eV with
Under semiconductor layer be formed by the first pn-junction 35, also, the first n-type Group III-V compound with 34 side of condenser is partly led
First p-type Group III-V compound semiconductor layer laminate 25 of 31 side of body laminated layer body 26 and external connection substrate.
First n-type Group III-V compound semiconductor layer laminate 26 has multiple n-type Group III-V compounds half by lamination
Conductor and formed, for example, as shown in figure 5, including N-shaped GaAs contact layers 26a, N-shaped AlInP Window layers 26b and N-shaped AlInGaP
Emitter layer 26c.
First p-type Group III-V compound semiconductor layer laminate 25 has multiple p-type Group III-V compounds half by lamination
Conductor layer and formed, for example, as shown in figure 5, including p-type AlInGaP base layers 25a and p-type AlInP back surface field layers 25b.
Second Group III-V compound semiconductor solar cell 27, it is 1.4eV or more and 1.6eV to contain by band gap width
Semiconductor layer below is formed by the second pn-junction 36, also, the second n-type Group III-V compound with 34 side of condenser half
Second p-type Group III-V compound semiconductor layer laminate 22 of 31 side of conductor layer laminate 23 and external connection substrate.
Second n-type Group III-V compound semiconductor layer laminate 23 has multiple n-type Group III-V compounds half by lamination
Conductor layer and formed, for example, as shown in figure 5, including N-shaped AlInP Window layers 23a and N-shaped AlGaAs emitter layers 23b.
Second p-type Group III-V compound semiconductor layer laminate 22 has multiple p-type Group III-V compounds half by lamination
Conductor layer and formed, for example, as shown in figure 5, including p-type AlGaAs base layers 22a, p-type InGaP back surface field layers 22b and p
Type GaAs contact layers 22c.
The surface of the light receiving side of first n-type Group III-V compound semiconductor layer laminate 26 is provided with n-electrode 29,
The surface of 31 side of external connection substrate of second p-type Group III-V compound semiconductor layer laminate 22 is provided with p-electrode 21.
Moreover, the more maqting type solar cells 20 ' of iii-v, so that the side that p-electrode 21 is contacted with external connecting wires 33
Formula is electrically connected on external connection substrate 31.
Since the light-focusing type photoelectric conversion device 2 of the present invention is such a construction, the more maqting type solar-electricities of iii-v
Pond 20 ' is configured in the through hole 16 of silicon solar cell 10 ', constitute photo-electric conversion element 30 silicon solar cell 10 ' and
The more maqting type solar cells of iii-v 20 ' are placed on external connection substrate 31, so if the iii-v that combination is existing
More maqting type solar cells and existing silicon solar cell and electric connection will become a kind of light-focusing type opto-electronic conversion and fill
It sets, without re-starting band gap design, non-solar cell batteries manufacturer can also be easily manufactured.
Also, since the more maqting type solar cells 20 ' of the iii-v of the light-focusing type photoelectric conversion device 2 of the present invention carry
It is placed on external connection substrate 31, therefore the heat of generation in the more maqting type solar cells 20 ' of iii-v can be made directly to expand
It is dissipated to external connection substrate 31, so as to prevent heat from being spread to silicon solar cell 10 ', and inhibits silicon solar cell
10 ' decrease in power generation efficiency, while can easily be done heat dissipation design.
In the condenser of at least more than one of the more maqting type solar cells of silicon solar cell 10 ', iii-v 20 '
On 34 side surfaces, it is preferably provided with resin layer, the resin layer is mixed with the material comprising silicone resin and adjustable wavelength
Fluorophor.
With such a configuration, the more maqting type solar cells of silicon solar cell 10 ', iii-v 20 ' can be made extremely
The generating efficiency of few one improves.
In at least more than one aforementioned poly- of the more maqting type solar cells of silicon solar cell 10 ', iii-v 20 '
On 34 side surface of light microscopic, it is preferably provided with vitreous layer, the vitreous layer is mixed with using polysilazane as main component
Material and adjustable wavelength fluorophor and formed.
With such a configuration, the more maqting type solar cells of silicon solar cell 10 ', iii-v 20 ' can also be made
The generating efficiency of at least one improves.
By photo-electric conversion element 30 it is integrated with external connection substrate 31 after, mold can be used, and using containing saturating
The material of bright silicone resin, in the one side with 31 opposite side of external connection substrate of photo-electric conversion element 30, make condenser 34 at
Type hardens.
The condenser 34 of light-focusing type photoelectric conversion device 2 can be manufactured using such manufacturing method.
[embodiment]
Hereinafter, illustrative embodiments, comparative example, carry out more specific description, but the present invention is not limited to these to the present invention
Example.
(embodiment 1)
First, it is ready to pass through etching method and is formed with the silicon solar cell 10 ' of through hole 16.
Then, using solder(ing) paste, silicon solar cell 10 ' and the more maqting type solar cells of iii-v 20 ' are placed in
External connection substrate 31 is in PCB substrate, and the more maqting type solar cells of the iii-v 20 ' are placed in silicon solar cell
10 ' 16 part of through hole.
Then, UV ozone treatments are implemented.
Then, photo-electric conversion element 30 and external connection substrate 31 are configured at mold, using by silicone resin (LPS-
3541 (models)：Chemical industrial company of SHIN-ETSU HANTOTAI (Shin-Etsu Chemical Co., Ltd.s) manufactures) compression forming, by optically focused
Mirror 34 is integrally formed, to make light-focusing type photoelectric conversion device 2.
(embodiment 2)
First, it is ready to pass through etching method and is formed with the silicon solar cell 10 ' of through hole 16.
Then, using solder(ing) paste, silicon solar cell 10 ' and the more maqting type solar cells of iii-v 20 ' are placed in
External connection substrate 31 is in PCB substrate, and the more maqting type solar cells of the iii-v 20 ' are placed in silicon solar cell
10 ' 16 part of through hole.
Then, UV ozone treatments are implemented.
Then, using vacuum lamination apparatus (manufacture of Nichigo-Morton companies), silicone resin (AF-500 will be mixed
(model)：SHIN-ETSU HANTOTAI's chemical industry manufacture) and the latter made resin film of fluorophor, it is attached at the surface of silicon solar cell 10 '.
Then, the photo-electric conversion element 30 having been connect with external connection substrate 31 is configured at mold, using by silicone tree
Fat (LPS-3541 (model)：Chemical industrial company of SHIN-ETSU HANTOTAI manufactures) compression forming, condenser 34 is integrally formed, to make optically focused
Type photoelectric conversion device 2.
(embodiment 3)
First, it is ready to pass through etching method and is formed with the silicon solar cell 10 ' of through hole 16.
Then, using solder(ing) paste, silicon solar cell 10 ' and the more maqting type solar cells of iii-v 20 ' are placed in
External connection substrate 31 is in PCB substrate, and the more maqting type solar cells of the iii-v 20 ' are placed in silicon solar cell
10 ' 16 part of through hole.
Then, UV ozone treatments are implemented.
Then, by spin coating, coating is mixed with polysilazane on the surface of silicon solar cell 10 ' and fluorophor forms
Material, and make its harden after, make vitreous layer.
Then, the photo-electric conversion element 30 having been connect with external connection substrate 31 is configured at mold, using by silicone tree
Fat (LPS-3541 (model)：Chemical industrial company of SHIN-ETSU HANTOTAI manufactures) compression forming, condenser 34 is integrally formed, to make optically focused
Type photoelectric conversion device 2.
(comparative example 1)
On one side with reference to Fig. 6, the light-focusing type photoelectric conversion device 4 of comparative example 1 is illustrated on one side.
First, using solder(ing) paste, silicon solar cell 10 ' is placed in comprising matrix 42 and external connecting wires 43
External connection substrate 41 is then to implement UV ozone treatments in PCB substrate.
Then, silk-screen printing silver paste (manufacture of chemical industrial company of SHIN-ETSU HANTOTAI) on the surface of silicon solar cell 10 ', to make
Make electrode layer 32, the electrode layer 32 loads the optically focused more maqting type solar cells of solar cell, that is, iii-v 20 '.
After making electrode layer 32, using Pb-free solder, by the optically focused more maqting type solar energy of solar cell, that is, iii-v
Battery 20 ' is placed on electrode layer 32.
Then, the photo-electric conversion element 30 being placed on external connection substrate 41 is configured at mold, using by silicone
Resin (LPS-3541 (model)：Chemical industrial company of SHIN-ETSU HANTOTAI manufactures) compression forming, condenser 34 and external connection base will be possessed
The photo-electric conversion element 30 of plate 41 is integrally formed, to make light-focusing type photoelectric conversion device 4.
The light-focusing type photoelectric conversion device 2 of Examples 1 to 3 is measured using actual sunlight at 25 DEG C respectively
Total generating efficiency.
Further, silicon solar cell, the more maqting type solar cells of iii-v are equally operated, measures power generation
Efficiency.In addition, generating efficiency be defined as (electricity output from solar cell/enter solar cell solar energy) × 100
(%).
This result is shown in table 1.
[table 1]
As known from Table 1, come with the existing more maqting type solar cells of iii-v in the existing silicon solar cell of combination
In the light-focusing type photoelectric conversion device of the Examples 1 to 3 made, silicon solar cell, iii-v is relatively used alone and connects more
Mould assembly solar cell can be such that generating efficiency improves tremendously.
Also, practical sunlight is used, respectively to the light-focusing type photoelectric conversion device 2 of Examples 1 to 3, measures experiment opening
The junction temperature (junction temperature) of total generating efficiency and its silicon solar cell after beginning 30 minutes.
Further, the light-focusing type photoelectric conversion device 4 of comparative example 1 is also similarly measured.
This result is shown in table 2.
[table 2]
| Embodiment 1 | Embodiment 2 | Comparative example 1 | |
| Generating efficiency (%) | 25 | 27 | 19 |
| Junction temperature (DEG C) | 57 | 57 | 73 |
As known from Table 2, make the embodiment combined after silicon solar cell and the more maqting type solar cell independences of iii-v
In 1~3 light-focusing type photoelectric conversion device 2, with the more maqting type solar cells of lamination iii-v on silicon solar cell
The light-focusing type photoelectric conversion device 4 of comparative example 1 is compared, since the more maqting type solar cell fevers of iii-v are to silicon solar
It influences to be inhibited caused by battery, the junction temperature of silicon solar cell will not be substantially increased.It follows that can will be because connecing
The fall of generating efficiency maintains within 10% caused by the temperature rise of face, to solve the problems, such as thermal diffusivity correlation.
In addition, the present invention is not limited to the above embodiments.The above embodiment is to illustrate, and has the power with the present invention
The substantially identical structure of technological thought described in sharp claim, and the technical solution of identical function and effect is played, it is all contained in this
In the technical scope of invention.
Claims (32)
1. a kind of light-focusing type photoelectric conversion device, has：Condenser；And photo-electric conversion element, photo-electric conversion element setting
In it is opposite with aforementioned condenser to position, which is characterized in that
Aforementioned Photon-Electron conversion element includes：Scattering light solar cell with through hole；And optically focused solar cell,
The optically focused is configured at solar cell in the aforementioned through hole of aforementioned scatter light solar cell；
Also, aforementioned condenser is made of clear thermosetting resin,
Also, aforementioned Photon-Electron conversion element is placed on external connection substrate.
2. light-focusing type photoelectric conversion device as described in claim 1, wherein aforementioned scatter light solar cell gathers with aforementioned
Light solar cell includes monocrystalline silicon type, polycrystalline silicon type, film silicon type, heterojunction type, copper indium gallium selenide type, cadmium telluride type, color
At least one or more in plain sensitizing type, organic semiconductor type and the more maqting types of iii-v.
3. light-focusing type photoelectric conversion device as described in claim 1, wherein aforementioned transparent thermosetting resin is containing silicone
Material.
4. light-focusing type photoelectric conversion device as claimed in claim 2, wherein aforementioned transparent thermosetting resin is containing silicone
Material.
5. light-focusing type photoelectric conversion device as described in claim 1, wherein in aforementioned scatter light solar cell and aforementioned
On the surface of the aforementioned condenser side of optically focused solar cell, there is resin layer or vitreous layer, the resin layer or glass
Matter layer contains at least one or more in anti-light scattering material, fluorophor and quantum dot.
6. light-focusing type photoelectric conversion device as claimed in claim 2, wherein in aforementioned scatter light solar cell and aforementioned
On the surface of the aforementioned condenser side of optically focused solar cell, there is resin layer or vitreous layer, the resin layer or glass
Matter layer contains at least one or more in anti-light scattering material, fluorophor and quantum dot.
7. light-focusing type photoelectric conversion device as claimed in claim 3, wherein in aforementioned scatter light solar cell and aforementioned
On the surface of the aforementioned condenser side of optically focused solar cell, there is resin layer or vitreous layer, the resin layer or glass
Matter layer contains at least one or more in anti-light scattering material, fluorophor and quantum dot.
8. light-focusing type photoelectric conversion device as claimed in claim 4, wherein in aforementioned scatter light solar cell and aforementioned
On the surface of the aforementioned condenser side of optically focused solar cell, there is resin layer or vitreous layer, the resin layer or glass
Matter layer contains at least one or more in anti-light scattering material, fluorophor and quantum dot.
9. such as light-focusing type photoelectric conversion device described in any item of the claim 1 to 8, wherein in the aforementioned scatter light sun
On the face of the said external connecting substrate side of energy battery, there is reflecting layer, the reflecting layer to make to penetrate the aforementioned scatter light sun
Can battery and come light reflection or scattering.
10. such as light-focusing type photoelectric conversion device described in any item of the claim 1 to 8, wherein aforementioned condenser and aforementioned light
Electric transition element is to be integrally formed, sealed using clear thermosetting resin, and the clear thermosetting resin is in 400nm~800nm
Wave-length coverage in, the transmitance of light is 80% or more.
11. light-focusing type photoelectric conversion device as claimed in claim 9, wherein aforementioned condenser and aforementioned Photon-Electron conversion element
It is to be integrally formed, sealed, wave-length coverage of the clear thermosetting resin in 400nm~800nm using clear thermosetting resin
Interior, the transmitance of light is 80% or more.
12. a kind of light-focusing type photoelectric conversion device, has：Condenser；And photo-electric conversion element, the photo-electric conversion element are set
Be placed in it is opposite with aforementioned condenser to position, which is characterized in that
Aforementioned Photon-Electron conversion element has：Silicon solar cell as base material；And the more maqting type solar cells of iii-v,
The more maqting type solar cells of the iii-v are configured in the through hole formed in aforementioned silicon solar cell；
Also, aforementioned Photon-Electron conversion element is placed on external connection substrate.
13. light-focusing type photoelectric conversion device as claimed in claim 12, wherein in aforementioned silicon solar cell, aforementioned III-V
On the aforementioned condenser side surface of at least more than one of the more maqting type solar cells of race, it is provided with resin layer, the resin
Layer is mixed with the fluorophor of the material comprising silicone resin and adjustable wavelength.
14. light-focusing type photoelectric conversion device as claimed in claim 12, wherein in aforementioned silicon solar cell, aforementioned III-V
On the aforementioned condenser side surface of at least more than one of the more maqting type solar cells of race, it is provided with vitreous layer, the glass
Glass matter layer is the fluorophor being mixed with polysilazane material as main component with adjustable wavelength and is formed.
15. a kind of manufacturing method of light-focusing type photoelectric conversion device is poly- described in any one of manufacturing claims 1 to 8
The method of light type photoelectric conversion device, which is characterized in that
By aforementioned Photon-Electron conversion element it is integrated with said external connecting substrate after, using mold, utilize aforementioned transparent thermosetting
Property resin make condenser molding hardening in the one side with said external connecting substrate opposite side of aforementioned Photon-Electron conversion element.
16. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 15, wherein pass through perforation, laser and erosion
The processing method of at least one or more in quarter, will be in the aforementioned perforation formed in solar cell of aforementioned scatter light to be formed
Hole.
17. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 15, wherein use clear thermosetting tree
Fat, by way of at least one or more in injection molding, transfer formation, compression forming and ejection formation, by aforementioned condenser with
Aforementioned Photon-Electron conversion element is integrally formed, seals, and the clear thermosetting resin is in the wave-length coverage of 400nm~800nm, light
Transmitance be 80% or more.
18. a kind of manufacturing method of light-focusing type photoelectric conversion device is the light-focusing type opto-electronic conversion described in manufacturing claims 9
The method of device, which is characterized in that
By aforementioned Photon-Electron conversion element it is integrated with said external connecting substrate after, using mold, utilize aforementioned transparent thermosetting
Property resin make condenser molding hardening in the one side with said external connecting substrate opposite side of aforementioned Photon-Electron conversion element.
19. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 18, wherein pass through perforation, laser and erosion
The processing method of at least one or more in quarter, will be in the aforementioned perforation formed in solar cell of aforementioned scatter light to be formed
Hole.
20. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 18, wherein use clear thermosetting tree
Fat, by way of at least one or more in injection molding, transfer formation, compression forming and ejection formation, by aforementioned condenser with
Aforementioned Photon-Electron conversion element is integrally formed, seals, and the clear thermosetting resin is in the wave-length coverage of 400nm~800nm, light
Transmitance be 80% or more.
21. a kind of manufacturing method of light-focusing type photoelectric conversion device is that the light-focusing type photoelectricity described in manufacturing claims 10 turns
The method of changing device, which is characterized in that
By aforementioned Photon-Electron conversion element it is integrated with said external connecting substrate after, using mold, utilize aforementioned transparent thermosetting
Property resin make condenser molding hardening in the one side with said external connecting substrate opposite side of aforementioned Photon-Electron conversion element.
22. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 21, wherein pass through perforation, laser and erosion
The processing method of at least one or more in quarter, will be in the aforementioned perforation formed in solar cell of aforementioned scatter light to be formed
Hole.
23. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 21, wherein use clear thermosetting tree
Fat, by way of at least one or more in injection molding, transfer formation, compression forming and ejection formation, by aforementioned condenser with
Aforementioned Photon-Electron conversion element is integrally formed, seals, and the clear thermosetting resin is in the wave-length coverage of 400nm~800nm, light
Transmitance be 80% or more.
24. a kind of manufacturing method of light-focusing type photoelectric conversion device is that the light-focusing type photoelectricity described in manufacturing claims 11 turns
The method of changing device, which is characterized in that
By aforementioned Photon-Electron conversion element it is integrated with said external connecting substrate after, using mold, utilize aforementioned transparent thermosetting
Property resin make condenser molding hardening in the one side with said external connecting substrate opposite side of aforementioned Photon-Electron conversion element.
25. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 24, wherein pass through perforation, laser and erosion
The processing method of at least one or more in quarter, will be in the aforementioned perforation formed in solar cell of aforementioned scatter light to be formed
Hole.
26. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 24, wherein use clear thermosetting tree
Fat, by way of at least one or more in injection molding, transfer formation, compression forming and ejection formation, by aforementioned condenser with
Aforementioned Photon-Electron conversion element is integrally formed, seals, and the clear thermosetting resin is in the wave-length coverage of 400nm~800nm, light
Transmitance be 80% or more.
27. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 19, wherein use clear thermosetting tree
Fat, by way of at least one or more in injection molding, transfer formation, compression forming and ejection formation, by aforementioned condenser with
Aforementioned Photon-Electron conversion element is integrally formed, seals, and the clear thermosetting resin is in the wave-length coverage of 400nm~800nm, light
Transmitance be 80% or more.
28. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 20, wherein use clear thermosetting tree
Fat, by way of at least one or more in injection molding, transfer formation, compression forming and ejection formation, by aforementioned condenser with
Aforementioned Photon-Electron conversion element is integrally formed, seals, and the clear thermosetting resin is in the wave-length coverage of 400nm~800nm, light
Transmitance be 80% or more.
29. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 21, wherein use clear thermosetting tree
Fat, by way of at least one or more in injection molding, transfer formation, compression forming and ejection formation, by aforementioned condenser with
Aforementioned Photon-Electron conversion element is integrally formed, seals, and the clear thermosetting resin is in the wave-length coverage of 400nm~800nm, light
Transmitance be 80% or more.
30. the manufacturing method of light-focusing type photoelectric conversion device as claimed in claim 22, wherein use clear thermosetting tree
Fat, by way of at least one or more in injection molding, transfer formation, compression forming and ejection formation, by aforementioned condenser with
Aforementioned Photon-Electron conversion element is integrally formed, seals, and the clear thermosetting resin is in the wave-length coverage of 400nm~800nm, light
Transmitance be 80% or more.
31. a kind of manufacturing method of light-focusing type photoelectric conversion device is poly- described in any one of manufacturing claims 5 to 8
The method of light type photoelectric conversion device, which is characterized in that
By way of at least one or more in the molding of film adhered, spraying, spin coating, printing, vapor deposition and mold, before being formed
State resin layer or foregoing glass matter layer.
32. a kind of manufacturing method of light-focusing type photoelectric conversion device, is described in any one of manufacturing claims 12 to 14
The method of light-focusing type photoelectric conversion device, which is characterized in that
By aforementioned Photon-Electron conversion element it is integrated with said external connecting substrate after, using mold, and using containing transparent silicon
The material of ketone resin makes condenser be molded in the one side with said external connecting substrate opposite side of aforementioned Photon-Electron conversion element
Hardening.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-032098 | 2014-02-21 | ||
| JP2014032098A JP6042362B2 (en) | 2014-02-21 | 2014-02-21 | Condensing photoelectric conversion device and manufacturing method thereof |
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| CN104868835B true CN104868835B (en) | 2018-07-13 |
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| JPH11233818A (en) * | 1998-02-10 | 1999-08-27 | Furukawa Electric Co Ltd:The | Optoelectric conversion type light-emitting device |
| JP4986056B2 (en) * | 2007-12-13 | 2012-07-25 | シャープ株式会社 | Condensing photoelectric converter |
| US8669461B2 (en) * | 2008-10-17 | 2014-03-11 | Massachusetts Institute Of Technology | Ultra-high efficiency multi-junction solar cells using polychromatic diffractive concentrators |
| CN101494248B (en) * | 2009-03-05 | 2011-09-07 | 中山大学 | Flat-plate concentration solar battery and method for manufacturing the same |
| CN102449775B (en) * | 2009-06-05 | 2014-07-02 | 独立行政法人产业技术综合研究所 | Semiconductor wafer, photoelectric conversion device, method of producing semiconductor wafer, and method of producing photoelectric conversion device |
| CN101777596B (en) * | 2010-01-19 | 2011-06-29 | 华中科技大学 | Dispersion type solar cell adopting photonic crystals |
| JP2015159154A (en) * | 2014-02-21 | 2015-09-03 | 信越化学工業株式会社 | Condensing photoelectric conversion apparatus and method for manufacturing the same |
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| JP6042362B2 (en) | 2016-12-14 |
| JP2015159151A (en) | 2015-09-03 |
| CN104868835A (en) | 2015-08-26 |
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