CN104868835A - Concentrator photovoltaic conversion device and manufacturing method thereof - Google Patents
Concentrator photovoltaic conversion device and manufacturing method thereof Download PDFInfo
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- CN104868835A CN104868835A CN201510086836.2A CN201510086836A CN104868835A CN 104868835 A CN104868835 A CN 104868835A CN 201510086836 A CN201510086836 A CN 201510086836A CN 104868835 A CN104868835 A CN 104868835A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention aims to provide a concentrator photovoltaic conversion device having the advantages of no need for redesigning a band gap, using existing solar cells obtained from non-solar cell manufacturers, easy manufacturing, easy thermal design, and capacity of suppressing reduction of conversion efficiency even in the case of improved concentrating efficiency. In order to solve the problems, the present invention provides the concentrator photovoltaic conversion device, comprising a concentrating mirror and a photovoltaic conversion element arranged opposite to the concentrating mirror, wherein the photovoltaic conversion element comprises a light scattering-used solar cell having a through hole, and a concentrating-used solar cell arranged in the through hole of the light scattering-used solar cell, in addition, the concentrating mirror is formed by transparent thermosetting resin, and the photovoltaic conversion element is carried on an external connection substrate.
Description
Technical field
The present invention relates to a kind of light-focusing type photoelectric conversion device and manufacture method thereof.
Background technology
Previously, as photoelectric conversion device, the device of solar generating converted solar energy into electrical energy is able to practical application, in order to realize cost degradation, and obtaining more energy output further, a kind of light-focusing type photoelectric conversion device is practical, and the solar irradiation of gathering is incident upon the solar cell device less than the light-receiving area of condenser by condenser by it, obtain electric energy (for example, referring to patent documentation 1).
But, there is following problem in previous light-focusing type photoelectric conversion device: during fine day, compared with using the panel solar battery component (module) of common silicon solar cell, more energy output can be obtained, but almost cannot obtain energy output during the cloudy day.
In order to solve the problem, a kind of light-focusing type photoelectric conversion device is proposed, it is configured to, scattered light silicon solar cell is placed optically focused compound semiconductor many maqting type solar cell, thus scattered light silicon solar cell and optically focused compound semiconductor many maqting type solar cell is electrically connected (with reference to patent documentation 2).
[prior art document]
(patent documentation)
Patent documentation 1: Japanese Unexamined Patent Publication 2006-339522 publication;
Patent documentation 2: Japanese Unexamined Patent Publication 2009-147077 publication.
Summary of the invention
To the light-focusing type photoelectric conversion device proposed in patent documentation 2, with reference to Fig. 7, while carry out following explanation.
In the figure 7, light-focusing type photoelectric conversion device 3 has: silicon solar cell 100, i.e. scattered light solar cell; And compound semiconductor many maqting type solar cell 200, is namely formed at the optically focused solar cell on silicon solar cell 100.
In addition, the top of light-focusing type photoelectric conversion device 3 is sensitive surface, and top has the condenser (not shown) being converged to optically focused solar cell and compound semiconductor many maqting type solar cell 200.
Silicon solar cell 100 comprises: p-type silicon substrate 113; N-shaped impurity doping region 114, it is formed at the sensitive surface side of p-type silicon substrate 113; And, p-type impurity doping region 112, it is formed at the opposition side of the sensitive surface of p-type silicon substrate 113; Wherein, N-shaped impurity doping region 114 comprises: the first emitter layer 114a; And the second emitter layer 114b, it is arranged at around the first emitter layer 114a.
Be formed with n-electrode 115 on the surface of the second emitter layer 114b, be formed with p-electrode 111 on the surface of p-type impurity doping region 112.
Further, on the first emitter layer 114a, across a part of dielectric film 117, the bonding electrodes 116 of L-shaped shape is formed.
Compound semiconductor many maqting type solar cell 200 has: the first compound semiconductor solar cell 523 of sensitive surface side; Second compound semiconductor solar cell 524, it is positioned at the opposition side of sensitive surface; And tunnel junction layer (tunnel junction layer) 518, it is between the first compound semiconductor solar cell 523 and the second compound semiconductor solar cell 524.
First compound semiconductor solar cell 523 and the second compound semiconductor solar cell 524, is engaged by tunnel junction layer 518.
First compound semiconductor solar cell 523, containing by band gap width for more than 1.8eV and the semiconductor layer of below 2eV formed the one pn tie 525, further, there is the first n-type compound semiconductor layer laminate 516 of sensitive surface side and the first p-type compound semiconductor layer laminate 517 of sensitive surface opposition side.
First n-type compound semiconductor layer laminate 516 has multiple n-type compound semiconductor layer by lamination and is formed, and the first p-type compound semiconductor layer laminate 517 has multiple p-type compound semiconductor layer by lamination and formed.
Second compound semiconductor solar cell 524, containing by band gap width for more than 1.4eV and the semiconductor layer of below 1.6eV formed the 2nd pn tie 526, further, there is the second n-type compound semiconductor layer laminate 519 of sensitive surface side and the second p-type compound semiconductor layer laminate 520 of sensitive surface opposition side.
Second n-type compound semiconductor layer laminate 519 has multiple n-type compound semiconductor layer by lamination and is formed, and the second p-type compound semiconductor layer laminate 520 has multiple p-type compound semiconductor layer by lamination and formed.
The surface of the sensitive surface side of the first n-type compound semiconductor layer laminate 516 is provided with n-electrode 521, the surface contrary with sensitive surface side of the second p-type compound semiconductor layer laminate 520 is provided with p-electrode 522.
And, arrange by making the p-electrode 522 of compound semiconductor many maqting type solar cell 200 and be electrically connected on the bonding electrodes 116 of silicon solar cell 100, forming light-focusing type photoelectric conversion device 3.
But, the result after the research such as the present inventor, find above-mentioned in illustrated light-focusing type photoelectric conversion device 3 there is following problem points.
First problem point is the band gap difficult design due to each subelement (that is, optically focused solar cell and scattered light solar cell), is therefore difficult to high efficiency.
Namely, use compound semiconductor many maqting type solar cell and these two kinds of solar cells of silicon solar cell, in order to improve generating efficiency, need to adjust the main wavelength utilizing each solar cell to absorb, but it is comparatively difficult to utilize which solar cell to absorb the adjustment of which wavelength, as a result, be difficult to carry out band gap design.
Can estimate that above-mentioned impact in the following cases can be more obvious: when the area of compound semiconductor many maqting type solar cell becomes larger relative to the ratio (being generally less than 1) of the area of silicon solar cell, that is, become the silicon solar cell of the shadow of compound semiconductor many maqting type solar cell area become large time.
Second Problem point is for non-solar cell batteries manufacturer, manufactures difficulty.
That is, manufacturing installation needs hundreds of millions of semiconductor-fabricating devices, and the little companies such as medium-sized and small enterprises are difficult to carry out equipment investment thus manufacture difficulty.
3rd problem points is heat dissipation design difficulty.
Namely, optically focused solar cell and compound semiconductor many maqting type solar cell 200 of above-mentioned light-focusing type photoelectric conversion device 3 are configured on silicon solar cell 100, because the heat produced by optically focused spreads from many maqting type solar cell 200 to silicon solar cell 100, therefore the heat produced will through silicon solar cell 100 once, the heat of such generation just can not directly loss to outside, therefore heat dissipation design difficulty.
Four problems point reduces due to the easy Yin Wendu rising of conversion efficiency of silicon solar cell, therefore cannot improve concentration magnification.
Namely, because the major heat produced in compound semiconductor many maqting type solar cell 200 by optically focused can diffuse to silicon solar cell 100, therefore, if make concentration magnification improve, then the reduction of conversion efficiency can be caused because the temperature of silicon solar cell 100 rises.
Further, because the high temperature of local makes to produce stress distribution in silicon solar cell, therefore, also have problems from the viewpoint of long-term reliability.
The present invention puts in view of the above problems and completes, its object is to provide a kind of light-focusing type photoelectric conversion device, without the need to re-starting band gap design, use the existing solar cell that non-solar cell batteries manufacturer also can obtain, can easily manufacture, heat dissipation design is easy, even and if raising concentration magnification also can suppress conversion efficiency to decline.
In order to achieve the above object, the invention provides a kind of light-focusing type photoelectric conversion device, it possesses: condenser; And, photo-electric conversion element, this photo-electric conversion element is arranged at the position relative with aforementioned condenser, it is characterized in that, aforementioned Photon-Electron conversion element comprises: the scattered light solar cell with through hole; And, optically focused solar cell, this optically focused solar cell is configured in the aforementioned through hole of aforementioned scatter light solar cell; Further, aforementioned condenser is made up of clear thermosetting resin, and aforementioned Photon-Electron conversion element is placed on outside connection substrate.
So, become a kind of like this structure, optically focused solar cell is configured in the through hole of scattered light solar cell, the scattered light solar cell and the optically focused solar cell that form photo-electric conversion element are placed on outside connection substrate, if combine existing optically focused solar cell and existing scattered light solar cell and be electrically connected, just a kind of light-focusing type photoelectric conversion device can be become, thus become a kind of without the need to re-starting band gap design, the structure that non-solar cell batteries manufacturer also can easily manufacture.
And, because optically focused solar cell is placed on outside connection substrate, therefore, it is possible to make the heat produced in optically focused solar cell directly diffuse to outside connection substrate, thus become a kind of and heat can be prevented to the diffusion of scattered light solar cell and easily carry out the structure of heat dissipation design.
Now, aforementioned scatter light solar cell and aforementioned optically focused solar cell can comprise monocrystalline silicon type, polycrystalline silicon type, film silicon type, heterojunction (hetero-junction with intrinsic thin-layer, HIT) type, Copper Indium Gallium Selenide (copper indium gallium selenide, more than at least 1 person CIGS) in type, cadmium telluride (cadmiumtelluride, CdTe) type, coloring matter sensitization type, organic semiconductor type and the many maqting type of iii-v.
So, as scattered light solar cell and optically focused solar cell, the solar cell of the above-mentioned type can be used aptly.
Now, aforementioned transparent thermosetting resin is preferably the material containing silicone.
As the clear thermosetting resin forming condenser, the material containing silicone can be used aptly.
Now, on the surface of the condenser side of scattered light solar cell and optically focused solar cell, preferably have resin bed or vitreous layer, described resin bed or vitreous layer contain more than at least a kind in anti-light scattering material, fluorophor and quantum dot.
By such structure, the generating efficiency of scattered light solar cell and optically focused solar cell can be made to improve.
Now, be preferably on the face of the said external connection substrate side of aforementioned scatter light solar cell, have reflector, described reflector makes the light come through aforementioned scatter light solar cell reflect or scattering.
By such structure, the generating efficiency of scattering solar cell can be made to improve.
Now, aforementioned condenser and aforementioned Photon-Electron conversion element, preferably utilize clear thermosetting resin one-body molded, sealing, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
By such structure, while the generating efficiency maintaining scattering solar cell and optically focused solar cell, the moisture-proof of photo-electric conversion element can be improved.
Further, the invention provides a kind of light-focusing type photoelectric conversion device, it possesses: condenser; And, photo-electric conversion element, this photo-electric conversion element is arranged at the position relative with aforementioned condenser, it is characterized in that, aforementioned Photon-Electron conversion element has: as the silicon solar cell of base material; And, iii-v many maqting type solar cell, this iii-v many maqting type solar cell is configured in the through hole that formed in aforementioned silicon solar cell; Further, aforementioned Photon-Electron conversion element, is placed on outside connection substrate.
So, become a kind of like this structure, optically focused solar cell and iii-v many maqting type solar cell are configured in the through hole of scattered light solar cell and silicon solar cell, and the silicon solar cell of formation photo-electric conversion element and iii-v many maqting type solar cell are placed on outside connection substrate, if therefore combine existing iii-v many maqting type solar cell and existing silicon solar cell and be electrically connected, just a kind of light-focusing type photoelectric conversion device can be become, thus without the need to re-starting band gap design, non-solar cell batteries manufacturer also can easily manufacture.
And, because iii-v many maqting type solar cell is placed on outside connection substrate, therefore, it is possible to make the heat produced in iii-v many maqting type solar cell directly diffuse to outside connection substrate, thus can prevent heat from spreading to silicon solar cell, the decrease in power generation efficiency of silicon solar cell can be suppressed, and easily can carry out heat dissipation design.
Now, aforementioned silicon solar cell, on the surface of at least more than one aforementioned condenser side of aforementioned iii-v many maqting type solar cell, preferably be provided with resin bed, described resin bed is mixed with the fluorophor of material and the adjustable wavelength comprising silicone resin.
By such structure, the generating efficiency of at least one of silicon solar cell, iii-v many maqting type solar cell can be made to improve.
Now, on the surface of at least more than one aforementioned condenser side of silicon solar cell or iii-v many maqting type solar cell, preferably be provided with vitreous layer, described vitreous layer is that to be mixed with polysilazane be that the material of main component and the fluorophor of adjustable wavelength are formed.
By such structure, the generating efficiency of at least one of silicon solar cell, iii-v many maqting type solar cell also can be made to improve.
And, the invention provides a kind of manufacture method of light-focusing type photoelectric conversion device, it is the method manufacturing above-mentioned light-focusing type photoelectric conversion device, it is characterized in that, after aforementioned Photon-Electron conversion element is integrated with said external connection substrate, use mould, utilize aforementioned transparent thermosetting resin, aforementioned Photon-Electron conversion element with the one side of said external connection substrate opposition side, make the shaping sclerosis of condenser.
Such manufacture method can be used to manufacture the condenser of above-mentioned light-focusing type photoelectric conversion device.
Now, by the processing method of more than at least a kind in perforation, laser and etching, the aforementioned through hole that will be formed in aforementioned scatter light solar cell can be formed.
When being formed in the aforementioned through hole formed in aforementioned scatter light solar cell, above-mentioned processing method can be used aptly.
Now, be preferably, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
By condenser and aforementioned Photon-Electron conversion element one-body molded, seal time, above-mentioned manufacture method can be used aptly.
And, the invention provides a kind of manufacture method of light-focusing type photoelectric conversion device, it is the method manufacturing above-mentioned light-focusing type photoelectric conversion device, it is characterized in that, by the mode of more than at least a kind in film adhered, spraying, spin coating, printing, evaporation and mould molding, form aforementioned resin layer or vitreous layer.
Such manufacture method can be used to manufacture resin bed or the vitreous layer of above-mentioned light-focusing type photoelectric conversion device.
And, the invention provides a kind of manufacture method of light-focusing type photoelectric conversion device, it is the method manufacturing above-mentioned light-focusing type photoelectric conversion device, it is characterized in that, after aforementioned Photon-Electron conversion element is integrated with said external connection substrate, use mould, and utilize the material comprising transparent silicone resin, aforementioned Photon-Electron conversion element with the one side of said external connection substrate opposition side, make the shaping sclerosis of condenser.
Such manufacture method can be used to manufacture the condenser of above-mentioned light-focusing type photoelectric conversion device.
As mentioned above, according to the present invention, become a kind of like this structure, optically focused solar cell is configured in the through hole of scattered light solar cell, the scattered light solar cell and the optically focused solar cell that form photo-electric conversion element are placed on outside connection substrate, if combine existing optically focused solar cell and existing scattered light solar cell and be electrically connected, just a kind of light-focusing type photoelectric conversion device can be become, therefore without the need to re-starting band gap design, non-solar cell batteries manufacturer also can easily manufacture.
And, according to the present invention, because optically focused solar cell is placed on outside connection substrate, therefore, it is possible to make the heat produced in optically focused solar cell directly diffuse to outside connection substrate, thus can prevent heat from spreading to scattered light solar cell, and easily carry out heat dissipation design.
Accompanying drawing explanation
Fig. 1 is the sectional view and the stereogram that represent light-focusing type photoelectric conversion device of the present invention.
Fig. 2 is the sectional view of the condenser representing light-focusing type photoelectric conversion device of the present invention.
Fig. 3 is sectional view and the stereogram of the concrete example representing light-focusing type photoelectric conversion device of the present invention.
Fig. 4 is the sectional view of the condenser of the concrete example representing light-focusing type photoelectric conversion device of the present invention.
Fig. 5 is the sectional view amplified by iii-v many maqting type solar cell of the concrete example of light-focusing type photoelectric conversion device of the present invention.
Fig. 6 is the sectional view of the light-focusing type photoelectric conversion device representing comparative example 1.
Fig. 7 is the sectional view representing previous light-focusing type photoelectric conversion device.
Wherein, description of reference numerals is as follows:
1,2,3,4 light-focusing type photoelectric conversion devices;
10 scattered light solar cells;
10 ' silicon solar cell (scattered light solar cell);
11 p-electrode;
12 p-type impurity doping regions;
13 p-type silicon substrates;
14 N-shaped impurity doping regions;
15 n-electrode;
16 through holes;
20 optically focused solar cells;
20 ' iii-v many maqting type solar cell (optically focused solar cell);
21 p-electrode;
22 second p-type Group III-V compound semiconductor layer laminates;
22a p-type AlGaAs base layer;
22b p-type InGaP back surface field layer;
22c p-type GaAs contact layer;
23 second n-type Group III-V compound semiconductor layer laminates;
23a N-shaped AlInP Window layer;
23b N-shaped AlGaAs emitter layer;
24 tunnel junction layers;
24a p-type AlGaAs tunnel junction layer;
24b N-shaped AlInGaP tunnel junction layer;
25 first p-type Group III-V compound semiconductor layer laminates;
25a p-type AlInGaP base layer;
25b p-type AlInP back surface field layer;
26 first n-type Group III-V compound semiconductor layer laminates;
26a N-shaped GaAs contact layer;
26b N-shaped AlInP Window layer;
26c N-shaped AlInGaP emitter layer;
27 second Group III-V compound semiconductor solar cells;
28 first Group III-V compound semiconductor solar cells;
29 n-electrode;
30 photo-electric conversion elements;
31 outside connection substrates;
32 matrixes;
33 external connecting wires;
34 condensers;
35 the one pn knots;
36 the 2nd pn knots;
41 outside connection substrates;
42 matrixes;
43 external connecting wires;
100 silicon solar cells (scattered light solar cell);
111 p-electrode;
112 p-type impurity doping regions;
113 p-type silicon substrates;
114 N-shaped impurity doping regions;
114a first emitter layer;
114b second emitter layer;
115 n-electrode;
116 bonding electrodes;
117 dielectric films;
200 compound semiconductor many maqting type solar cells (optically focused solar cell);
516 first n-type compound semiconductor layer laminates;
517 first p-type compound semiconductor layer laminates;
518 tunnel junction layers;
519 second n-type compound semiconductor layer laminates;
520 second p-type compound semiconductor layer laminates;
521 n-electrode;
522 p-electrode;
523 first compound semiconductor solar cells;
524 second compound semiconductor solar cells;
525 the one pn knots;
526 the 2nd pn knots.
Embodiment
Below, for the present invention, as an example of execution mode, with reference to accompanying drawing while be described in detail, but the present invention is not limited to this execution mode.
As mentioned above, in the light-focusing type photoelectric conversion device proposed in patent documentation 2, there is following problem points.
First problem point is the band gap difficult design due to each subelement (that is, optically focused solar cell and scattered light solar cell), is therefore difficult to high efficiency.
Second Problem point is for non-solar cell batteries manufacturer, manufactures difficulty.
3rd problem points is heat dissipation design difficulty.
Four problems point reduces due to the easy Yin Wendu rising of conversion efficiency of silicon solar cell, therefore cannot improve concentration magnification.
Therefore, the present inventor etc. make great efforts research repeatedly to light-focusing type photoelectric conversion device, described light-focusing type photoelectric conversion device is without the need to re-starting band gap design, non-solar cell batteries manufacturer also can easily manufacture, heat dissipation design is easy, even and if raising concentration magnification also can suppress conversion efficiency to decline.
It found that, become a kind of like this structure, optically focused solar cell is configured in the through hole of scattered light solar cell, the scattered light solar cell and the optically focused solar cell that form photo-electric conversion element are placed on outside connection substrate, if therefore combine existing optically focused solar cell and existing scattered light solar cell and be electrically connected, just a kind of light-focusing type photoelectric conversion device can be become, thus without the need to re-starting band gap design, non-solar cell batteries manufacturer also can easily manufacture, further, because optically focused solar cell is placed on outside connection substrate, therefore, it is possible to make the heat produced in optically focused solar cell directly diffuse to outside connection substrate, thus can prevent heat from spreading to scattered light solar cell, and easily carry out heat dissipation design, so far the present invention is completed.
Below, with reference to Fig. 1 ~ Fig. 2, while be described light-focusing type photoelectric conversion device of the present invention.
In Fig. 1, a () is the sectional view representing light-focusing type photoelectric conversion device 1 of the present invention, b () is the stereogram representing light-focusing type photoelectric conversion device 1 of the present invention, Fig. 2 is the sectional view of the condenser 34 representing light-focusing type photoelectric conversion device 1 of the present invention.
In FIG, light-focusing type photoelectric conversion device 1 possesses: the scattered light solar cell 10 with through hole 16; And photo-electric conversion element 30, it comprises the optically focused solar cell 20 be configured in the through hole 16 of scattered light solar cell 10.
And the top of light-focusing type photoelectric conversion device 1 is sensitive surface, and top has condenser 34, described condenser 34 is made up of (with reference to Fig. 2) the clear thermosetting resin being converged to optically focused solar cell 20.
Form the scattered light solar cell 10 of photo-electric conversion element 30 and optically focused solar cell 20 to be placed in respectively on the outside connection substrate 31 that is made up of matrix 32 and external connecting wires 33, and be connected to outside across outside connection substrate 31.
Because light-focusing type photoelectric conversion device 1 of the present invention is a kind of like this structure, optically focused solar cell 20 is configured in the through hole 16 of scattered light solar cell 10, the scattered light solar cell 10 and the optically focused solar cell 20 that form photo-electric conversion element 30 are placed on outside connection substrate 31, if therefore combine existing optically focused solar cell and existing scattered light solar cell and be electrically connected, just a kind of light-focusing type photoelectric conversion device can be become, thus become a kind of without the need to re-starting band gap design, the structure that non-solar cell batteries manufacturer also can easily manufacture.
And, due in light-focusing type photoelectric conversion device 1 of the present invention, optically focused solar cell 20 is placed on outside connection substrate 31, therefore, it is possible to make the heat produced in optically focused solar cell 20 directly diffuse to outside connection substrate 31, thus become one and can prevent heat from spreading to scattered light solar cell 10, and easily carry out the structure of heat dissipation design.
Scattered light solar cell 10 and optically focused solar cell 20 can comprise more than at least a kind in monocrystalline silicon type, polycrystalline silicon type, film silicon type, HIT type, CIGS type, CdTe type, coloring matter sensitization type, organic semiconductor type and the many maqting type of iii-v.
So, as scattered light solar cell and optically focused solar cell, the solar cell of the above-mentioned type can be used aptly.
The clear thermosetting resin forming condenser 34 is preferably the material containing silicone.
As the clear thermosetting resin forming condenser, the material containing silicone can be used aptly.
On the surface of scattered light with condenser 34 side of solar cell 10 and optically focused solar cell 20, preferably have resin bed or vitreous layer, described resin bed or vitreous layer contain more than at least a kind in anti-light scattering material, fluorophor and quantum dot.
By such structure, the generating efficiency of scattering solar cell 10 and optically focused solar cell 20 can be made to improve.
Can be attached by film, spray, spin coating, printing, more than at least one in evaporation and mould molding mode, form above-mentioned resin bed or vitreous layer.
Be preferably, the face of outside connection substrate 31 side of scattered light solar cell 10 has reflector, described reflector makes to reflect or scattering through the light of scattered light solar cell 10.
By such structure, the generating efficiency of scattering solar cell 10 can be made to improve.
Be preferably, utilize clear thermosetting resin, make condenser 10 and photo-electric conversion element 30 one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
By such structure, while the generating efficiency maintaining scattering solar cell 10 and optically focused solar cell 20, the moisture-proof of photo-electric conversion element can be improved.
After photo-electric conversion element 30 is integrated with outside connection substrate 31, use mould, utilize clear thermosetting resin, can photo-electric conversion element 30 with the one side of outside connection substrate 31 opposition side, make the shaping sclerosis of condenser 34, thus form condenser 34.
Such manufacture method can be used to manufacture the condenser 34 of light-focusing type photoelectric conversion device 1.
By utilizing more than at least a kind processing in perforation, laser, etching, the aforementioned through hole 16 that will be formed in scattered light solar cell 10 can be formed.
When being formed in the aforementioned through hole formed in scattered light solar cell, above-mentioned processing method can be used aptly.
Be preferably, use clear thermosetting resin, by the method for more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by condenser and photo-electric conversion element is one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
By condenser and photo-electric conversion element is one-body molded, when sealing, can use above-mentioned manufacture method aptly.
Then, while with reference to Fig. 3 ~ Fig. 5, while be described the light-focusing type photoelectric conversion device 2 in light-focusing type photoelectric conversion device 1 of the present invention, described light-focusing type photoelectric conversion device 2 uses silicon solar cell 10 ' as scattered light solar cell, and uses iii-v many maqting type solar cell 20 ' as optically focused solar cell.
In Fig. 3, a () is the sectional view representing light-focusing type photoelectric conversion device 2 of the present invention, b () is the stereogram illustrating light-focusing type photoelectric conversion device 2 of the present invention, Fig. 4 is the sectional view of the condenser 34 representing light-focusing type photoelectric conversion device 2 of the present invention, and Fig. 5 represents the sectional view amplified by iii-v many maqting type solar cell 20 '.
In figure 3, light-focusing type photoelectric conversion device 2 possesses photo-electric conversion element 30, and described photo-electric conversion element 30 comprises: the silicon solar cell 10 ' with through hole 16; And iii-v many maqting type solar cell 20 ', it is configured in the through hole 16 of silicon solar cell 10 '.
And the top of light-focusing type photoelectric conversion device 2 is sensitive surface, and top has condenser 34, described condenser 34 is converged to iii-v many maqting type solar cell 20 ' (with reference to Fig. 4).
The silicon solar cell 10 ' and the iii-v many maqting type solar cell 20 ' that form photo-electric conversion element 30 are placed in the outside connection substrate 31 be made up of matrix 32 and external connecting wires 33 respectively, and are connected to outside across outside connection substrate 31.
Silicon solar cell 10 ' comprises: p-type silicon substrate 13; N-shaped impurity doping region 14, it is formed at condenser 34 side of p-type silicon substrate 13; And p-type impurity doping region 12, it is formed at outside connection substrate 31 side of p-type silicon substrate 13.
The surface of N-shaped impurity doping region 14 is formed with n-electrode 15, the surface of p-type impurity doping region 12 is formed with p-electrode 11.
And silicon solar cell 10 ', in the mode making p-electrode 11 contact with external connecting wires 33, is electrically connected at outside connection substrate 31.
Iii-v many maqting type solar cell 20 ' has: the first Group III-V compound semiconductor solar cell 28 of condenser 34 side; Second Group III-V compound semiconductor solar cell 27, it is positioned at outside connection substrate 31 side; And tunnel junction layer 24, it is between the first Group III-V compound semiconductor solar cell 28 and the second Group III-V compound semiconductor solar cell 27.
First Group III-V compound semiconductor solar cell 28 and the second Group III-V compound semiconductor solar cell 27 are bonded together by tunnel junction layer 24.
Tunnel junction layer 24, such as, as shown in Figure 5, comprises p-type AlGaAs tunnel junction layer 24a and N-shaped AlInGaP tunnel junction layer 24b.
First Group III-V compound semiconductor solar cell 28, containing by band gap width for more than 1.8eV and the semiconductor layer of below 2eV formed the one pn tie 35, further, there is the first n-type Group III-V compound semiconductor layer laminate 26 of condenser 34 side and the first p-type Group III-V compound semiconductor layer laminate 25 of outside connection substrate 31 side.
First n-type Group III-V compound semiconductor layer laminate 26 has multiple n-type Group III-V compound semiconductor by lamination and is formed, such as, as shown in Figure 5, N-shaped GaAs contact layer 26a, N-shaped AlInP Window layer 26b and N-shaped AlInGaP emitter layer 26c is comprised.
First p-type Group III-V compound semiconductor layer laminate 25 has multiple p-type Group III-V compound semiconductor layer by lamination and is formed, and such as, as shown in Figure 5, comprises p-type AlInGaP base layer 25a and p-type AlInP back surface field layer 25b.
Second Group III-V compound semiconductor solar cell 27, containing by band gap width for more than 1.4eV and the semiconductor layer of below 1.6eV formed the 2nd pn tie 36, further, there is the second n-type Group III-V compound semiconductor layer laminate 23 of condenser 34 side and the second p-type Group III-V compound semiconductor layer laminate 22 of outside connection substrate 31 side.
Second n-type Group III-V compound semiconductor layer laminate 23 has multiple n-type Group III-V compound semiconductor layer by lamination and is formed, and such as, as shown in Figure 5, comprises N-shaped AlInP Window layer 23a and N-shaped AlGaAs emitter layer 23b.
Second p-type Group III-V compound semiconductor layer laminate 22 has multiple p-type Group III-V compound semiconductor layer by lamination and is formed, such as, as shown in Figure 5, p-type AlGaAs base layer 22a, p-type InGaP back surface field layer 22b and p-type GaAs contact layer 22c is comprised.
The surface of the sensitive surface side of the first n-type Group III-V compound semiconductor layer laminate 26 is provided with n-electrode 29, the surface of outside connection substrate 31 side of the second p-type Group III-V compound semiconductor layer laminate 22 is provided with p-electrode 21.
And iii-v many maqting type solar cell 20 ', in the mode making p-electrode 21 contact with external connecting wires 33, is electrically connected on outside connection substrate 31.
Because light-focusing type photoelectric conversion device 2 of the present invention is a kind of like this structures, iii-v many maqting type solar cell 20 ' is configured in the through hole 16 of silicon solar cell 10 ', the silicon solar cell 10 ' and the iii-v many maqting type solar cell 20 ' that form photo-electric conversion element 30 are placed on outside connection substrate 31, if therefore combine existing iii-v many maqting type solar cell and existing silicon solar cell and be electrically connected, just a kind of light-focusing type photoelectric conversion device can be become, thus without the need to re-starting band gap design, non-solar cell batteries manufacturer also can easily manufacture.
And, iii-v many maqting type solar cell 20 ' due to light-focusing type photoelectric conversion device 2 of the present invention is placed on outside connection substrate 31, therefore, it is possible to make the heat produced in iii-v many maqting type solar cell 20 ' directly diffuse to outside connection substrate 31, thus can prevent heat from spreading to silicon solar cell 10 ', and suppress the decrease in power generation efficiency of silicon solar cell 10 ', easily can carry out heat dissipation design simultaneously.
On at least more than one condenser 34 side surface of silicon solar cell 10 ', iii-v many maqting type solar cell 20 ', be preferably provided with resin bed, described resin bed is mixed with the fluorophor of material and the adjustable wavelength comprising silicone resin.
By such structure, the generating efficiency of at least one of silicon solar cell 10 ', iii-v many maqting type solar cell 20 ' can be made to improve.
On at least more than one aforementioned condenser 34 side surface of silicon solar cell 10 ', iii-v many maqting type solar cell 20 ', preferably be provided with vitreous layer, described vitreous layer is that to be mixed with polysilazane be that the material of main component and the fluorophor of adjustable wavelength are formed.
By such structure, the generating efficiency of at least one of silicon solar cell 10 ', iii-v many maqting type solar cell 20 ' also can be made to improve.
After photo-electric conversion element 30 is integrated with outside connection substrate 31, can mould be used, and utilize containing the material of transparent silicone resin, photo-electric conversion element 30 with the one side of outside connection substrate 31 opposition side, make the shaping sclerosis of condenser 34.
Such manufacture method can be used to manufacture the condenser 34 of light-focusing type photoelectric conversion device 2.
[embodiment]
Below, illustrative embodiments, comparative example, carry out more specific description to the present invention, but the present invention is not limited to these examples.
(embodiment 1)
First, the silicon solar cell 10 ' being formed with through hole 16 by etching method is prepared.
Then, use solder(ing) paste, be placed in outside connection substrate 31 i.e. PCB substrate by silicon solar cell 10 ' and iii-v many maqting type solar cell 20 ', described iii-v many maqting type solar cell 20 ' is placed in through hole 16 part of silicon solar cell 10 '.
Then, UV ozone treatment is implemented.
Then, photo-electric conversion element 30 and outside connection substrate 31 are configured at mould, utilize silicone resin (LPS-3541 (model): chemical industrial company of SHIN-ETSU HANTOTAI (Shin-Etsu Chemical Co., Ltd.) manufacture) compression forming, by one-body molded for condenser 34, make light-focusing type photoelectric conversion device 2.
(embodiment 2)
First, the silicon solar cell 10 ' being formed with through hole 16 by etching method is prepared.
Then, use solder(ing) paste, be placed in outside connection substrate 31 i.e. PCB substrate by silicon solar cell 10 ' and iii-v many maqting type solar cell 20 ', described iii-v many maqting type solar cell 20 ' is placed in through hole 16 part of silicon solar cell 10 '.
Then, UV ozone treatment is implemented.
Then, utilize vacuum lamination apparatus (manufacture of Nichigo-Morton company), silicone resin (AF-500 (model): SHIN-ETSU HANTOTAI's chemical industry manufactures) and the latter made resin molding of fluorophor will be mixed, be attached at the surface of silicon solar cell 10 '.
Then, the photo-electric conversion element 30 be connected with outside connection substrate 31 is configured at mould, utilize silicone resin (LPS-3541 (model): chemical industrial company of SHIN-ETSU HANTOTAI manufactures) compression forming, by one-body molded for condenser 34, make light-focusing type photoelectric conversion device 2.
(embodiment 3)
First, the silicon solar cell 10 ' being formed with through hole 16 by etching method is prepared.
Then, use solder(ing) paste, be placed in outside connection substrate 31 i.e. PCB substrate by silicon solar cell 10 ' and iii-v many maqting type solar cell 20 ', described iii-v many maqting type solar cell 20 ' is placed in through hole 16 part of silicon solar cell 10 '.
Then, UV ozone treatment is implemented.
Then, by spin coating, on the surface of silicon solar cell 10 ', coating is mixed with the material of polysilazane and fluorophor, and after making it harden, makes vitreous layer.
Then, the photo-electric conversion element 30 be connected with outside connection substrate 31 is configured at mould, utilize silicone resin (LPS-3541 (model): chemical industrial company of SHIN-ETSU HANTOTAI manufactures) compression forming, by one-body molded for condenser 34, make light-focusing type photoelectric conversion device 2.
(comparative example 1)
While with reference to Fig. 6, be described the light-focusing type photoelectric conversion device 4 of comparative example 1.
First, use solder(ing) paste, silicon solar cell 10 ' is placed in the outside connection substrate 41 i.e. PCB substrate comprising matrix 42 and external connecting wires 43, then implement UV ozone treatment.
Then, silk screen printing silver slurry (manufacture of chemical industrial company of SHIN-ETSU HANTOTAI) on the surface of silicon solar cell 10 ', make electrode layer 32, described electrode layer 32 loads optically focused solar cell and iii-v many maqting type solar cell 20 '.
After making electrode layer 32, use Pb-free solder, optically focused solar cell and iii-v many maqting type solar cell 20 ' are placed on electrode layer 32.
Then, the photo-electric conversion element 30 be placed on outside connection substrate 41 is configured at mould, utilize silicone resin (LPS-3541 (model): chemical industrial company of SHIN-ETSU HANTOTAI manufactures) compression forming, one-body molded with the photo-electric conversion element 30 of outside connection substrate 41 by having condenser 34, make light-focusing type photoelectric conversion device 4.
Respectively to the light-focusing type photoelectric conversion device 2 of embodiment 1 ~ 3, use actual sunlight, measure the total generating efficiency 25 DEG C time.
Further, silicon solar cell, iii-v many maqting type solar cell are operated equally, measure generating efficiency.In addition, generating efficiency is defined as (solar energy that the electricity from solar cell exported/entered solar cell) × 100 (%).
This result is shown in table 1.
[table 1]
As known from Table 1, carry out in the light-focusing type photoelectric conversion device of the embodiment 1 ~ 3 made at the existing silicon solar cell of combination and existing iii-v many maqting type solar cell, comparatively be used alone silicon solar cell, iii-v many maqting type solar cell, generating efficiency can be made tremendously to improve.
Further, use actual sunlight, respectively to the light-focusing type photoelectric conversion device 2 of embodiment 1 ~ 3, measure the junction temperature (junction temperature) of the total generating efficiency after 30 minutes on-tests and silicon solar cell thereof.
Further, also same measurement is carried out to the light-focusing type photoelectric conversion device 4 of comparative example 1.
This result is shown in table 2.
[table 2]
| Embodiment 1 | Embodiment 2 | Comparative example 1 | |
| Generating efficiency (%) | 25 | 27 | 19 |
| Junction temperature (DEG C) | 57 | 57 | 73 |
As known from Table 2, make in the light-focusing type photoelectric conversion device 2 of silicon solar cell and the independent rear embodiment 1 ~ 3 combined of iii-v many maqting type solar cell, compared with the light-focusing type photoelectric conversion device 4 of the comparative example 1 of lamination iii-v many maqting type solar cell on silicon solar cell, because the heating of iii-v many maqting type solar cell is suppressed the impact that silicon solar cell causes, the junction temperature of silicon solar cell can not significantly rise.It can thus be appreciated that, the fall of the generating efficiency caused because junction temperature rises can be maintained within 10%, thus solve the relevant problem of thermal diffusivity.
In addition, the present invention is not limited to above-mentioned execution mode.Above-mentioned execution mode, for illustrating, has the structure identical with the technological thought essence described in claims of the present invention, and plays the technical scheme of identical action effect, be all included in technical scope of the present invention.
Claims (32)
1. a light-focusing type photoelectric conversion device, it possesses: condenser; And, photo-electric conversion element, this photo-electric conversion element is arranged at the position relative with aforementioned condenser, it is characterized in that,
Aforementioned Photon-Electron conversion element comprises: the scattered light solar cell with through hole; And, optically focused solar cell, this optically focused solar cell is configured in the aforementioned through hole of aforementioned scatter light solar cell;
Further, aforementioned condenser is made up of clear thermosetting resin,
Further, aforementioned Photon-Electron conversion element is placed on outside connection substrate.
2. light-focusing type photoelectric conversion device as claimed in claim 1, wherein, aforementioned scatter light solar cell and aforementioned optically focused solar cell comprise more than at least a kind in monocrystalline silicon type, polycrystalline silicon type, film silicon type, heterojunction type, Copper Indium Gallium Selenide type, cadmium telluride type, coloring matter sensitization type, organic semiconductor type and the many maqting type of iii-v.
3. light-focusing type photoelectric conversion device as claimed in claim 1, wherein, aforementioned transparent thermosetting resin is the material containing silicone.
4. light-focusing type photoelectric conversion device as claimed in claim 2, wherein, aforementioned transparent thermosetting resin is the material containing silicone.
5. light-focusing type photoelectric conversion device as claimed in claim 1, wherein, on the surface of the aforementioned condenser side of aforementioned scatter light solar cell and aforementioned optically focused solar cell, have resin bed or vitreous layer, described resin bed or vitreous layer contain more than at least a kind in anti-light scattering material, fluorophor and quantum dot.
6. light-focusing type photoelectric conversion device as claimed in claim 2, wherein, on the surface of the aforementioned condenser side of aforementioned scatter light solar cell and aforementioned optically focused solar cell, have resin bed or vitreous layer, described resin bed or vitreous layer contain more than at least a kind in anti-light scattering material, fluorophor and quantum dot.
7. light-focusing type photoelectric conversion device as claimed in claim 3, wherein, on the surface of the aforementioned condenser side of aforementioned scatter light solar cell and aforementioned optically focused solar cell, have resin bed or vitreous layer, described resin bed or vitreous layer contain more than at least a kind in anti-light scattering material, fluorophor and quantum dot.
8. light-focusing type photoelectric conversion device as claimed in claim 4, wherein, on the surface of the aforementioned condenser side of aforementioned scatter light solar cell and aforementioned optically focused solar cell, have resin bed or vitreous layer, described resin bed or vitreous layer contain more than at least a kind in anti-light scattering material, fluorophor and quantum dot.
9. the light-focusing type photoelectric conversion device according to any one of claim 1 to 8, wherein, on the face of the said external connection substrate side of aforementioned scatter light solar cell, have reflector, described reflector makes the light come through aforementioned scatter light solar cell reflect or scattering.
10. the light-focusing type photoelectric conversion device according to any one of claim 1 to 8, wherein, aforementioned condenser and aforementioned Photon-Electron conversion element be utilize clear thermosetting resin one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
11. light-focusing type photoelectric conversion devices as claimed in claim 9, wherein, aforementioned condenser and aforementioned Photon-Electron conversion element be utilize clear thermosetting resin one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
12. 1 kinds of light-focusing type photoelectric conversion devices, it possesses: condenser; And, photo-electric conversion element, this photo-electric conversion element is arranged at the position relative with aforementioned condenser, it is characterized in that,
Aforementioned Photon-Electron conversion element has: as the silicon solar cell of base material; And, iii-v many maqting type solar cell, this iii-v many maqting type solar cell is configured in the through hole that formed in aforementioned silicon solar cell;
Further, aforementioned Photon-Electron conversion element, is placed on outside connection substrate.
13. light-focusing type photoelectric conversion devices as claimed in claim 12, wherein, on at least more than one aforementioned condenser side surface of aforementioned silicon solar cell, aforementioned iii-v many maqting type solar cell, be provided with resin bed, described resin bed is mixed with the fluorophor of material and the adjustable wavelength comprising silicone resin.
14. light-focusing type photoelectric conversion devices as claimed in claim 12, wherein, on at least more than one aforementioned condenser side surface of aforementioned silicon solar cell, aforementioned iii-v many maqting type solar cell, be provided with vitreous layer, described vitreous layer is that to be mixed with polysilazane be that the material of main component and the fluorophor of adjustable wavelength are formed.
The manufacture method of 15. 1 kinds of light-focusing type photoelectric conversion devices, it is the method for the light-focusing type photoelectric conversion device according to any one of manufacturing claims 1 to 8, it is characterized in that,
After aforementioned Photon-Electron conversion element is integrated with said external connection substrate, use mould, utilize aforementioned transparent thermosetting resin, aforementioned Photon-Electron conversion element with the one side of said external connection substrate opposition side, make the shaping sclerosis of condenser.
The manufacture method of 16. 1 kinds of light-focusing type photoelectric conversion devices, it is the method for the light-focusing type photoelectric conversion device described in manufacturing claims 9, it is characterized in that,
After aforementioned Photon-Electron conversion element is integrated with said external connection substrate, use mould, utilize aforementioned transparent thermosetting resin, aforementioned Photon-Electron conversion element with the one side of said external connection substrate opposition side, make the shaping sclerosis of condenser.
The manufacture method of 17. 1 kinds of light-focusing type photoelectric conversion devices, it is the method for the light-focusing type photoelectric conversion device described in manufacturing claims 10, it is characterized in that,
After aforementioned Photon-Electron conversion element is integrated with said external connection substrate, use mould, utilize aforementioned transparent thermosetting resin, aforementioned Photon-Electron conversion element with the one side of said external connection substrate opposition side, make the shaping sclerosis of condenser.
The manufacture method of 18. 1 kinds of light-focusing type photoelectric conversion devices, it is the method for the light-focusing type photoelectric conversion device described in manufacturing claims 11, it is characterized in that,
After aforementioned Photon-Electron conversion element is integrated with said external connection substrate, use mould, utilize aforementioned transparent thermosetting resin, aforementioned Photon-Electron conversion element with the one side of said external connection substrate opposition side, make the shaping sclerosis of condenser.
The manufacture method of 19. light-focusing type photoelectric conversion devices as claimed in claim 15, wherein, by the processing method of more than at least a kind in perforation, laser and etching, forms the aforementioned through hole that will be formed in aforementioned scatter light solar cell.
The manufacture method of 20. light-focusing type photoelectric conversion devices as claimed in claim 16, wherein, by the processing method of more than at least a kind in perforation, laser and etching, forms the aforementioned through hole that will be formed in aforementioned scatter light solar cell.
The manufacture method of 21. light-focusing type photoelectric conversion devices as claimed in claim 17, wherein, by the processing method of more than at least a kind in perforation, laser and etching, forms the aforementioned through hole that will be formed in aforementioned scatter light solar cell.
The manufacture method of 22. light-focusing type photoelectric conversion devices as claimed in claim 18, wherein, by the processing method of more than at least a kind in perforation, laser and etching, forms the aforementioned through hole that will be formed in aforementioned scatter light solar cell.
The manufacture method of 23. light-focusing type photoelectric conversion devices as claimed in claim 15, wherein, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
The manufacture method of 24. light-focusing type photoelectric conversion devices as claimed in claim 16, wherein, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
The manufacture method of 25. light-focusing type photoelectric conversion devices as claimed in claim 17, wherein, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
The manufacture method of 26. light-focusing type photoelectric conversion devices as claimed in claim 18, wherein, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
The manufacture method of 27. light-focusing type photoelectric conversion devices as claimed in claim 19, wherein, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
The manufacture method of 28. light-focusing type photoelectric conversion devices as claimed in claim 20, wherein, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
The manufacture method of 29. light-focusing type photoelectric conversion devices as claimed in claim 21, wherein, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
The manufacture method of 30. light-focusing type photoelectric conversion devices as claimed in claim 22, wherein, use clear thermosetting resin, by the mode of more than at least a kind in injection moulding, transfer formation, compression forming and ejection formation, by aforementioned condenser and aforementioned Photon-Electron conversion element one-body molded, seal, described clear thermosetting resin is in the wave-length coverage of 400nm ~ 800nm, and the transmitance of light is more than 80%.
The manufacture method of 31. 1 kinds of light-focusing type photoelectric conversion devices, it is the method for the light-focusing type photoelectric conversion device according to any one of manufacturing claims 5 to 8, it is characterized in that,
By the mode of more than at least a kind in film adhered, spraying, spin coating, printing, evaporation and mould molding, form aforementioned resin layer or foregoing glass matter layer.
The manufacture method of 32. 1 kinds of light-focusing type photoelectric conversion devices, it is the method for the light-focusing type photoelectric conversion device according to any one of manufacturing claims 12 to 14, it is characterized in that,
After aforementioned Photon-Electron conversion element is integrated with said external connection substrate, use mould, and utilize containing the material of transparent silicone resin, aforementioned Photon-Electron conversion element with the one side of said external connection substrate opposition side, make the shaping sclerosis of condenser.
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| JPH11233818A (en) * | 1998-02-10 | 1999-08-27 | Furukawa Electric Co Ltd:The | Optoelectric conversion type light-emitting device |
| CN101494248A (en) * | 2009-03-05 | 2009-07-29 | 中山大学 | Flat-plate concentration solar battery and method for manufacturing the same |
| CN101777596A (en) * | 2010-01-19 | 2010-07-14 | 华中科技大学 | Dispersion type solar cell adopting photonic crystals |
| JP4986056B2 (en) * | 2007-12-13 | 2012-07-25 | シャープ株式会社 | Condensing photoelectric converter |
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| US8669461B2 (en) * | 2008-10-17 | 2014-03-11 | Massachusetts Institute Of Technology | Ultra-high efficiency multi-junction solar cells using polychromatic diffractive concentrators |
| CN102449775B (en) * | 2009-06-05 | 2014-07-02 | 独立行政法人产业技术综合研究所 | Semiconductor wafer, photoelectric conversion device, method of producing semiconductor wafer, and method of producing photoelectric conversion device |
| JP2015159154A (en) * | 2014-02-21 | 2015-09-03 | 信越化学工業株式会社 | Condensing photoelectric conversion apparatus and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233818A (en) * | 1998-02-10 | 1999-08-27 | Furukawa Electric Co Ltd:The | Optoelectric conversion type light-emitting device |
| JP4986056B2 (en) * | 2007-12-13 | 2012-07-25 | シャープ株式会社 | Condensing photoelectric converter |
| CN101494248A (en) * | 2009-03-05 | 2009-07-29 | 中山大学 | Flat-plate concentration solar battery and method for manufacturing the same |
| CN101777596A (en) * | 2010-01-19 | 2010-07-14 | 华中科技大学 | Dispersion type solar cell adopting photonic crystals |
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| JP6042362B2 (en) | 2016-12-14 |
| JP2015159151A (en) | 2015-09-03 |
| CN104868835B (en) | 2018-07-13 |
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