JP4986056B2 - Condensing photoelectric converter - Google Patents

Description

  The present invention relates to a concentrating photoelectric conversion device, and more particularly to a condensing photoelectric conversion device that can suppress a decrease in the amount of power generation during cloudy weather and obtain a large amount of power generation regardless of the weather.

Conventionally, a photovoltaic power generation device that converts solar energy into electrical energy has been put to practical use as a photoelectric conversion device. However, in order to achieve a reduction in cost and obtain a larger amount of power generation, a condensing lens is used. A condensing photoelectric conversion device of a type that takes out electric power by irradiating condensed solar light to a solar cell element smaller than the light receiving area of a condensing lens has been put into practical use (for example, see Patent Document 1).
JP 2006-339522 A

  However, in the conventional condensing photoelectric conversion device, a large amount of power generation can be obtained in clear weather as compared with a flat plate solar cell module using a normal silicon solar cell, but almost no power generation can be obtained in cloudy weather. There was a problem.

  Therefore, the present invention has been made to solve the above problems, and its purpose is to suppress a decrease in the amount of power generation during cloudy weather and to obtain a large amount of power generation regardless of the weather. The object is to provide a condensing photoelectric conversion device.

The present invention includes a condensing lens and a photoelectric conversion element installed at a position facing the condensing lens, the photoelectric conversion element on the surface of the silicon solar cell and the installation side of the condensing lens of the silicon solar cell. A light receiving surface which is a surface of the light receiving surface side multijunction solar cell on the installation side of the condensing lens, including a light receiving surface side multijunction solar cell installed so as to be electrically connected to the silicon solar cell of area I Oh below 1.2 times 0.8 or more areas of the light condensed on the light receiving surface by the condenser lens, the extension light receiving surface of the silicon solar cells around the light-receiving surface-side multi-junction solar cell The first emitter layer and the second emitter layer are provided on the surface of the silicon solar cell on the installation side of the condenser lens, and the first emitter layer is a light-receiving surface side multijunction solar cell. Formed below, the second emitter layer is extended Formed on the light receiving surface of the silicon solar cell, and the first emitter layer and the second emitter layer formed at a position adjacent to the first emitter layer are electrically separated, 2. A condensing photoelectric conversion device in which a second electrode is provided on the emitter layer of 2 and a third electrode is provided on the surface opposite to the installation side of the condenser lens of the silicon solar power It is.

Here, in the condensing photoelectric conversion device of the present invention, the first emitter layer of the silicon solar cell and the p-type layer of the light-receiving surface side multi-junction solar cell are electrically connected, and the light-receiving surface The first electrode is provided on the surface on the installation side of the condenser lens of the side multi-junction solar cell, the first electrode is an n-electrode, the second electrode is an n-electrode, The electrode is preferably a p-electrode .

  In the condensing photoelectric conversion device of the present invention, the light-receiving surface side multijunction solar cell includes a compound semiconductor solar including one pn junction of a compound semiconductor layer having a forbidden band width of 1.7 eV or more and 1.9 eV or less. You may have a battery. The compound semiconductor layer is preferably at least one selected from the group consisting of AlGaAs, InGaP, InGaAsP, AlInGaP, and AlInGaAsP.

  In the condensing photoelectric conversion device of the present invention, the light-receiving surface side multijunction solar cell includes a first pn junction of a first compound semiconductor layer having a forbidden band width of 1.8 eV or more and 2 eV or less. A first compound semiconductor solar cell, and a second compound semiconductor including a second pn junction of a second compound semiconductor layer having a forbidden band width of 1.4 eV or more and 1.6 eV or less below the first compound semiconductor solar cell You may have a solar cell. Here, the first compound semiconductor layer is preferably at least one selected from the group consisting of AlGaAs, InGaP, InGaAsP, AlInGaP, and AlInGaAsP, and the second compound semiconductor layer is made of AlGaAs, InGaAsP, and AlInGaAsP. It is preferably at least one selected from the group consisting of

  In the condensing photoelectric conversion device of the present invention, the light-receiving surface side multijunction solar cell includes a first pn junction of a first compound semiconductor layer having a forbidden band width of 1.8 eV or more and 2 eV or less. A first compound semiconductor solar cell, and a second compound semiconductor including a second pn junction of a second compound semiconductor layer having a forbidden band width of 1.4 eV or more and 1.6 eV or less below the first compound semiconductor solar cell A back side multi-junction solar cell is installed on the surface of the silicon solar cell opposite to the installation side of the condenser lens so as to be electrically connected to the silicon solar cell. The back side multi-junction solar cell includes a third compound semiconductor solar cell including a third pn junction of a third compound semiconductor layer having a forbidden band width of 0.6 eV or more and 0.8 eV or less. Also good. Here, the first compound semiconductor layer is preferably at least one selected from the group consisting of AlGaAs, InGaP, InGaAsP, AlInGaP, and AlInGaAsP, and the second compound semiconductor layer is made of AlGaAs, InGaAsP, and AlInGaAsP. The third compound semiconductor layer is preferably at least one selected from the group consisting of InGaAs, InGaAsP, and AlInGaAsP.

In addition, the condensing photoelectric conversion device according to the present invention separates power generated between the first electrode and the third electrode from power generated between the second electrode and the third electrode. Preferably it can be done.

  ADVANTAGE OF THE INVENTION According to this invention, the condensing photoelectric conversion apparatus which enabled suppression of the fall of the electric power generation amount at the time of cloudy weather and obtained many electric power generation amounts irrespective of the weather can be provided.

  Embodiments of the present invention will be described below. In the drawings of the present invention, reference numerals represent the same or corresponding parts.

<Embodiment 1>
FIG. 1A is a schematic cross-sectional view of an example of a photoelectric conversion element used in the condensing photoelectric conversion device of the present invention.

  As shown in FIG. 1A, a photoelectric conversion element used in the condensing photoelectric conversion device of the present invention includes a silicon solar cell 10 formed from a silicon substrate and a light reception formed on the silicon solar cell 10. It is comprised from the surface side multijunction type solar cell 20. In addition, a condensing lens is installed in the light-receiving surface (surface on the opposite side to the surface where the silicon solar cell 10 is installed) side of the light-receiving surface side multijunction solar cell 20 side.

  Here, in the silicon solar cell 10, an n-type impurity doped region 14 formed by doping a light-receiving surface of a p-type silicon substrate 13 with a striped n-type impurity is formed, and the p-type silicon substrate 13 is formed. A p-type impurity doping region 12 formed by doping a p-type impurity is formed on the entire back surface of the p-type impurity. A p-electrode 11 made of a conductive material is formed so as to cover the p-type impurity doping region 12. Is formed.

  Also, the n-type impurity doping region 14 is not located below the first emitter layer 14 a located below the light-receiving surface side multijunction solar cell 20 and the light-receiving surface side multijunction solar cell 20. And an emitter layer 14b. At both ends of the first emitter layer 14a, an L-shaped junction electrode 16 and a band-shaped insulating film 17 filling the gap between the junction electrode 16 and the first emitter layer 14a are formed. A plurality of n electrodes 15 are formed on the second emitter layer 14b.

  Here, since the first emitter layer 14a and the second emitter layer 14b are each formed in a strip shape with a predetermined interval, the first emitter layer 14a and the second emitter layer 14b are provided between the first emitter layer 14a and the second emitter layer 14b. Have no electrical contact and are electrically separated.

  The light-receiving surface side multijunction solar cell 20 includes a p-type compound semiconductor layer stack 211 formed by stacking a plurality of p-type compound semiconductor layers, and the p-type compound semiconductor layer stack 211. It has a compound semiconductor solar cell 215 formed by bonding an n-type compound semiconductor layer stack 210 formed by stacking a plurality of n-type compound semiconductor layers. A junction between the p-type compound semiconductor layer stack 211 and the n-type compound semiconductor layer stack 210 is a pn junction 214.

  An n-side electrode 212 is formed on the light-receiving surface of the n-type compound semiconductor layer stack 210 of the light-receiving surface side multijunction solar cell 20, and p is formed on the back surface of the p-type compound semiconductor layer stack 211. Side electrodes 213 are formed.

  The p-side electrode 213 of the light-receiving surface side multi-junction solar cell 20 is placed on and electrically connected to the junction electrode 16 of the silicon solar cell 10 to form a photoelectric conversion element.

  FIG. 1B is a schematic perspective view of the photoelectric conversion element shown in FIG. 1A viewed from the light receiving surface side. As shown in FIG. 1B, the photoelectric conversion element of the present embodiment has a configuration in which a light-receiving surface side multijunction solar cell 20 is installed at the center of the light-receiving surface of the silicon solar cell 10.

  FIG. 1C is a schematic perspective view of the photoelectric conversion element shown in FIG. As shown in FIG. 1C, in the photoelectric conversion element of the present embodiment, a p-electrode 11 is formed on the entire back surface of the silicon solar cell 10.

  The photoelectric conversion elements shown in FIGS. 1A to 1C can be manufactured, for example, as follows.

  First, a p-type impurity doped region 12 serving as a back surface field layer is formed by doping a p-type impurity such as boron on the back surface of a p-type silicon substrate 13 doped with a p-type impurity such as boron. Then, a p-electrode 11 is formed on the surface of the p-type impurity doping region 12 by evaporating a metal such as aluminum.

  Next, a silicon oxide film is formed on the light-receiving surface of the p-type silicon substrate 13 by spin coating sintering or the like, and a pattern is formed in a region that does not correspond to the formation region of the n-type impurity doping region 14 by using a photolithography technique. A annealed silicon oxide film is formed. Then, the portion where the silicon oxide film is not formed is etched to expose a part of the light receiving surface of the p-type silicon substrate 13 and doped with an n-type impurity such as phosphorus to form the light receiving surface of the p-type silicon substrate 13. An n-type impurity doping region 14 (first emitter layer 14a, second emitter layer 14b) is formed. Thereafter, the silicon oxide film is removed.

  Subsequently, as shown in the schematic cross-sectional view of FIG. 2A, an insulating film 17 is formed on the first emitter layer 14 a on the light receiving surface of the p-type silicon substrate 13. Then, as shown in the schematic cross-sectional view of FIG. 2B, a resist pattern 110 patterned into a predetermined shape is formed on both sides of the insulating film 17 by using a photolithography technique, and then, for example, By evaporating silver or the like, the band-shaped n-electrode 15 and the L-shaped bonding electrode 16 can be formed. And the silicon solar cell 10 of the structure shown to Fig.1 (a) is formed by removing the resist pattern 110 formed as mentioned above. Here, in the present embodiment, the forbidden band widths of the p-type silicon substrate 13 and the n-type impurity doping region 14 of the silicon solar cell 10 are about 1.1 eV, respectively.

  In addition to the silicon solar cell 10, as shown in the schematic configuration diagram of FIG. 3, on the GaAs substrate 21, a GaAs buffer layer 22, an InGaP etching stop layer 23, an n-type GaAs contact layer 24, an n-type AlInP window. The compound semiconductor in which the layer 25, the n-type InGaP emitter layer 26, the p-type InGaP base layer 27, the p-type AlInP back surface field layer 28 and the p-type GaAs contact layer 29 are sequentially epitaxially grown by, eg, MOCVD (Metal Organic Chemical Vapor Deposition) method A wafer is produced.

  Here, an n-type compound semiconductor layer laminate 210 is constituted by a laminate of the n-type GaAs contact layer 24, the n-type AlInP window layer 25, and the n-type InGaP emitter layer 26, and the p-type InGaP base layer 27 and the p-type AlInP back surface. A p-type compound semiconductor layer stack 211 is formed by a stack of the electric field layer 28 and the p-type GaAs contact layer 29. Here, the pn junction 214 is formed by joining the n-type InGaP emitter layer 26 and the p-type InGaP base layer 27. Here, in this embodiment, the forbidden band widths of the n-type InGaP emitter layer 26 and the p-type InGaP base layer 27 are 1.7 eV or more and 1.9 eV or less, respectively.

  Then, a p-side electrode 213 patterned in a predetermined shape is formed on the surface of the p-type GaAs contact layer 29 of the compound semiconductor wafer, and cells are formed by dicing the compound semiconductor wafer into a square shape.

  Thereafter, the p-side electrode 213 of the cell formed as described above is electrically connected and fixed on the junction electrode 16 of the silicon solar cell 10 manufactured as described above. Here, the connection between the junction electrode 16 of the silicon solar cell 10 and the p-side electrode 213 of the cell can be implemented by using, for example, a low melting point eutectic metal or solder.

  Then, with the cell fixed on the silicon solar cell 10, the GaAs substrate 21, GaAs buffer layer 22 and InGaP etching stop layer 23 of the cell are removed, and the surface of the n-type GaAs contact layer 24 is exposed.

  Thereafter, a resist pattern having a predetermined shape is formed on the surface of the n-type GaAs contact layer 24 exposed as described above using a photolithography technique, and a metal film is deposited on a portion where the resist pattern is not formed. Then, the metal film formed on the resist pattern together with the resist pattern is removed by lift-off or the like, whereby the n-side electrode 212 patterned into a predetermined shape by the remaining metal film is formed. Here, as the n-side electrode 212, for example, a configuration in which a metal film is formed in the order of an Au—Ge film, a Ni film, an Au film, and an Ag film from the surface side of the n-type GaAs contact layer 24 can be used.

In the above epitaxial growth, for example, the surface temperature of the GaAs substrate 21 is set to about 700.degree. Moreover, as a raw material for epitaxially growing the GaAs compound semiconductor layer, for example, TMG (trimethyl gallium) and AsH ₃ (arsine) can be used. Moreover, as a raw material for epitaxially growing the InGaP compound semiconductor layer, for example, TMI (trimethylindium), TMG, and PH ₃ (phosphine) can be used. Moreover, as a raw material for epitaxially growing the AlInP compound semiconductor layer, for example, TMA (trimethylaluminum), TMI, and PH ₃ can be used.

In addition, when the p-type compound semiconductor layer is epitaxially grown during the above-described epitaxial growth, for example, DEZn (diethyl zinc) can be used together with the above raw material, and when the n-type compound semiconductor layer is epitaxially grown, For example, SiH ₄ (monosilane) can be used together with these raw materials.

  Through the above steps, a photoelectric conversion element having the configuration illustrated in FIGS. 1A to 1C can be manufactured. Then, on the light receiving surface of the photoelectric conversion element thus manufactured, for example, a glass condensing lens having a square shape with a side of 10 mm, a thickness of 3 mm, and a focal length of about 10 mm is attached. The condensing photoelectric conversion device of this embodiment can be manufactured. In the present invention, the condensing lens is not particularly limited as long as it has a function of condensing sunlight.

  FIG. 4 (a) shows a schematic top view of the condensing photoelectric conversion device of the present invention produced as described above, and FIG. 4 (b) shows the condensing photoelectric conversion shown in FIG. 4 (a). A schematic cross-sectional view of the apparatus is shown.

  As shown in FIG. 4A, the condensing lenses 30 are arranged in 5 × 5 above the light receiving surface of the photoelectric conversion element, and the n-electrodes 15 of the silicon solar cell 10 are electrically connected. A terminal 31 for connecting and collecting current and a terminal 32 for electrically connecting and collecting the n-side electrode 212 of the light receiving surface side multi-junction solar cell 20 are drawn out of the photoelectric conversion element.

  Here, in the condensing lens 30, the area of the light receiving surface of each light receiving surface side multijunction solar cell 20 is condensed on the light receiving surface of the light receiving surface side multijunction solar cell 20 by each condensing lens 30. About the same area as the light (the area of the light receiving surface of the light receiving surface side multi-junction solar cell 20 is equal to 0. 0 of the area of the light collected by the condenser lens 30 on the light receiving surface of the light receiving surface side multi junction solar cell 20 8 or more and 1.2 times or less).

  In addition, as shown in FIG. 4B, a space 33 is formed between the condenser lens 30 and the light receiving surface side multijunction solar cell 20.

  The condensing photoelectric conversion device having the above-described configuration is irradiated with pseudo sunlight from the condensing lens 30 side by a solar simulator, and between the terminal 32 and the p electrode 11 and between the terminal 31 and the p electrode 11. Each electrical characteristic was evaluated.

  That is, in the condensing photoelectric conversion device of the present embodiment, the first emitter layer 14a and the second emitter layer 14b of the silicon solar cell 10 are electrically separated from each other. The electric power generated between the n-side electrode 212 formed on the light receiving surface of the junction solar cell 20 and the p-electrode 11 formed on the silicon solar cell 10, and on the second emitter layer 14 b of the silicon solar cell 10 It is possible to separate the electric power generated between the n-electrode 15 formed on the first electrode and the p-electrode 11 formed on the silicon solar cell 10.

  Moreover, said electric characteristic was evaluated about each case of the case where the pseudo sunlight by a solar simulator is irradiated perpendicularly | vertically with respect to the condensing lens 30, and the case where it irradiates and inclines at 30 degrees.

  As a result, when simulated sunlight is irradiated perpendicularly to the condensing lens 30, the amount of power generation between the terminal 32 and the p electrode 11 is 0.56 W, and between the terminal 31 and the p electrode 11. The power generation amount was 0.1 W.

  Further, when the artificial sunlight is irradiated at an angle of 30 ° with respect to the condenser lens 30, the amount of power generation between the terminal 32 and the p electrode 11 is 0.15 W, and the terminal 31 and the p electrode 11 The amount of power generated during this period was 0.3W.

  Thus, in the concentrating photoelectric conversion device of the present embodiment having the above-described configuration, the forbidden band width is 1 on the light receiving surface of the silicon solar cell 10 made of silicon having a forbidden band width of about 1.1 eV. Since the light-receiving surface side multi-junction solar cell 20 having a pn junction of a compound semiconductor layer of 0.7 eV or more and 1.9 eV or less is installed, sunlight condensed by the condenser lens 30 is incident in fine weather. The light receiving surface side multi-junction solar cell 20 can generate electric power efficiently, and the silicon solar cell 10 around the light receiving surface side multi-junction solar cell 20 can generate electric power in cloudy weather.

  Therefore, in the concentrating photoelectric conversion device according to the present embodiment, silicon is effective not only in fine weather but also in cloudy weather as compared with the conventional condensing photoelectric conversion device that can generate power efficiently only in fine weather. Since it is possible to suppress a decrease in the amount of power generation by the power generation of the solar cell 10, it is possible to obtain a large amount of power generation regardless of the weather. That is, in the condensing photoelectric conversion device of this embodiment, it is possible to solve the problem that only direct light can be used and scattered light cannot be used.

  Further, in the concentrating photoelectric conversion device of the present embodiment, the relatively inexpensive silicon solar cell 10 can be used in a large area, and the light receiving surface side multijunction is within a relatively small area in the center. Since the solar cell 20 is installed, a condensing photoelectric conversion device with high conversion efficiency can be manufactured at a relatively low cost.

  Furthermore, in the condensing photoelectric conversion device of the present embodiment, the forbidden band of the compound semiconductor layer constituting the light-receiving surface side multi-junction solar cell 20 is selected so as to be optimal in combination with the silicon solar cell 10. Therefore, the conversion efficiency of the condensing photoelectric conversion device can be increased.

  In the concentrating photoelectric conversion device of the present embodiment, the power from the light-receiving surface side multi-junction solar cell 20 and the power from the silicon solar cell 10 can be separated. In actual power generation, They can be connected in series and parallel to each voltage so as to match each voltage (or can be adjusted on the inverter side).

  In the above embodiment, the pn junction 214 is formed by joining the n-type InGaP emitter layer 26 having a forbidden band width of 1.7 eV or more and 1.9 eV or less and the p-type InGaP base layer 27. However, the material of the compound semiconductor layer forming the pn junction 214 is at least one selected from the group consisting of AlGaAs, InGaP, InGaAsP, AlInGaP, and AlInGaAsP whose forbidden band width is 1.7 eV or more and 1.9 eV or less. It is preferable to use a kind of compound semiconductor layer.

<Embodiment 2>
FIG. 5A shows a schematic cross-sectional view of another example of the photoelectric conversion element used in the condensing photoelectric conversion device of the present invention. In the concentrating photoelectric conversion device of the present embodiment, the light-receiving surface side multi-junction solar cell 20 formed on the silicon solar cell 10 is formed by a compound semiconductor layer having a forbidden band width of 1.8 eV or more and 2 eV or less. A first compound semiconductor solar cell 523 including the first pn junction 525 formed, and a second compound semiconductor layer having a forbidden band width of 1.4 eV or more and 1.6 eV or less below the first compound semiconductor solar cell 523. The second compound semiconductor solar cell 524 including the pn junction 526 is characterized.

  Here, the first compound semiconductor solar battery 523 includes a first p-type compound semiconductor layer stack 517 formed by stacking a plurality of p-type compound semiconductor layers, and the first p-type compound semiconductor. It is configured by bonding a first n-type compound semiconductor layer stack 516 formed by stacking a plurality of n-type compound semiconductor layers on the layer stack 517.

  The second compound semiconductor solar battery 524 includes a second p-type compound semiconductor layer stack 520 formed by stacking a plurality of p-type compound semiconductor layers, and the second p-type compound semiconductor layer. The second n-type compound semiconductor layer stack 519 formed by stacking a plurality of n-type compound semiconductor layers on the stack 520 is joined.

  The first compound semiconductor solar cell 523 and the second compound semiconductor solar cell 524 are joined via a tunnel junction 518.

  In addition, an n-side electrode 521 is formed on the light-receiving surface of the first n-type compound semiconductor layer stack 516 of the first compound semiconductor solar cell 523, and the second compound semiconductor solar cell 524 has the second A p-side electrode 522 is formed on the back surface of the p-type compound semiconductor layer stack 520.

  The p-side electrode 522 of the light-receiving surface side multi-junction solar cell 20 is placed on and electrically connected to the junction electrode 16 of the silicon solar cell 10 to form a photoelectric conversion element.

  FIG. 5B is a schematic perspective view of the photoelectric conversion element shown in FIG. 5A viewed from the light receiving surface side. As shown in FIG. 5B, the photoelectric conversion element of the present embodiment has a configuration in which a light receiving surface side multijunction solar cell 20 is installed at the center of the light receiving surface of the silicon solar cell 10.

  FIG. 5C is a schematic perspective view of the photoelectric conversion element shown in FIG. As shown in FIG. 5C, in the photoelectric conversion element of the present embodiment, the p electrode 11 is formed on the entire back surface of the silicon solar cell 10.

  The photoelectric conversion elements shown in FIGS. 5A to 5C can be manufactured, for example, as follows.

  First, in the same manner as in the first embodiment, the silicon solar cell 10 having the configuration shown in FIG. Here, also in the present embodiment, the forbidden band widths of the p-type silicon substrate 13 and the n-type impurity doping region 14 of the silicon solar cell 10 are each about 1.1 eV.

  In addition to the silicon solar cell 10, as shown in the schematic configuration diagram of FIG. 6, on the GaAs substrate 51, a GaAs buffer layer 52, an InGaP etching stop layer 53, an n-type GaAs contact layer 54, an n-type AlInP window. Layer 55, n-type AlInGaP emitter layer 56, p-type AlInGaP base layer 57, p-type AlInP back surface field layer 58, p-type AlGaAs tunnel junction layer 59, n-type AlInGaP tunnel junction layer 510, n-type AlInP window layer 511, n-type A compound semiconductor wafer is produced by sequentially epitaxially growing the AlGaAs emitter layer 512, the p-type AlGaAs base layer 513, the p-type InGaP back surface field layer 514, and the p-type GaAs contact layer 515 by, for example, MOCVD.

  Here, the n-type GaAs contact layer 54, the n-type AlInP window layer 55, and the n-type AlInGaP emitter layer 56 constitute a first n-type compound semiconductor layer stack 516, and the p-type AlInGaP base layer 57 and the p-type AlInGaP base layer 57 and p A first p-type compound semiconductor layer stack 517 is configured by a stack of the type AlInP back surface field layer 58.

  A tunnel junction 518 is formed by the junction of the p-type AlGaAs tunnel junction layer 59 and the n-type AlInGaP tunnel junction layer 510.

  The n-type AlInP window layer 511 and the n-type AlGaAs emitter layer 512 constitute a second n-type compound semiconductor layer laminate 519, which includes a p-type AlGaAs base layer 513 and a p-type InGaP back surface field layer 514. The p-type GaAs contact layer 515 constitutes a second p-type compound semiconductor layer laminate 520.

  Further, in the present embodiment, the forbidden band widths of the n-type AlInGaP emitter layer 56 and the p-type AlInGaP base layer 57 forming the first pn junction 525 are 1.8 eV or more and 2 eV or less, respectively. The forbidden band widths of the n-type AlGaAs emitter layer 512 and the p-type AlGaAs base layer 513 forming the pn junction 526 are 1.4 eV or more and 1.6 eV or less, respectively.

  Then, a p-side electrode 522 patterned in a predetermined shape is formed on the surface of the p-type GaAs contact layer 515 of the compound semiconductor wafer, and a cell is formed by dicing the compound semiconductor wafer into a square shape.

  Thereafter, the p-side electrode 522 of the cell formed as described above is electrically connected and fixed on the junction electrode 16 of the silicon solar cell 10 manufactured as described above.

  Then, with the cell fixed on the silicon solar cell 10, the GaAs substrate 51, the GaAs buffer layer 52, and the InGaP etching stop layer 53 of the cell are removed, and the surface of the n-type GaAs contact layer 54 is exposed.

  Thereafter, an n-side electrode 521 patterned in a predetermined shape is formed on the surface of the n-type GaAs contact layer 54 exposed as described above. Here, as the n-side electrode 521, for example, a configuration in which a metal film is formed in the order of an Au—Ge film, a Ni film, an Au film, and an Ag film from the surface side of the n-type GaAs contact layer 54 can be used.

When the AlGaAs compound semiconductor layer is epitaxially grown during the above epitaxial growth, for example, TMA, TMG and AsH ₃ can be used as the raw material. Further, when the AlInGaP compound semiconductor layer is epitaxially grown, for example, TMA, TMI, TMG, and PH ₃ can be used as the raw material.

For epitaxial growth of the n-type compound semiconductor layer, for example, SiH ₄ can be used together with the above raw materials. Further, when the AlGaAs compound semiconductor layer is made to be p-type, for example, CBr ₄ (carbon tetrabromide) can be used together with the above-mentioned raw materials, and a p-type compound semiconductor layer other than the AlGaAs compound semiconductor layer is epitaxially grown. For example, DEZn can be used together with the above raw materials. Others are the same as in the first embodiment.

  Through the above steps, a photoelectric conversion element having the configuration illustrated in FIGS. 5A to 5C can be manufactured. Then, the condensing lens is affixed on the light receiving surface of the photoelectric conversion element thus manufactured in the same manner as in the first embodiment, so that the configuration shown in FIGS. 4A and 4B is implemented. A condensing photoelectric conversion device of the form can be manufactured.

  Also in this case, in the condensing lens 30, the area of the light receiving surface of each light receiving surface side multijunction solar cell 20 is condensed on the light receiving surface of the light receiving surface side multijunction solar cell 20 by each condensing lens 30. About the same area as the light (the area of the light receiving surface of the light receiving surface side multi-junction solar cell 20 is equal to 0. 0 of the area of the light collected by the condenser lens 30 on the light receiving surface of the light receiving surface side multi junction solar cell 20 8 or more and 1.2 times or less).

  And similarly to Embodiment 1, about the condensing photoelectric conversion apparatus of the above configuration, the solar simulator irradiates pseudo sunlight from the condensing lens 30 side, and between the terminal 32 and the p electrode 11, The electrical characteristics between the terminal 31 and the p-electrode 11 were evaluated.

  That is, also in the concentrating photoelectric conversion device of the present embodiment, the first emitter layer 14a and the second emitter layer 14b of the silicon solar cell 10 are electrically separated from each other. The electric power generated between the n-side electrode 521 formed on the light-receiving surface of the junction solar cell 20 and the p-electrode 11 formed on the silicon solar cell 10 and the second emitter layer 14b of the silicon solar cell 10 The power generated between the n-electrode 15 formed on the first electrode and the p-electrode 11 formed on the silicon solar cell 10 can be separated.

  In addition, as in the first embodiment, the electrical characteristics described above are evaluated for each of the case where the simulated sunlight by the solar simulator is irradiated perpendicularly to the condenser lens 30 and the case where it is irradiated at an angle of 30 °. did.

  As a result, when simulated sunlight is irradiated perpendicularly to the condenser lens 30, the amount of power generation between the terminal 32 and the p electrode 11 is 0.64 W, and between the terminal 31 and the p electrode 11. The power generation amount was 0.1 W.

  Further, when the artificial sunlight is irradiated at an angle of 30 ° with respect to the condenser lens 30, the amount of power generation between the terminal 32 and the p electrode 11 is 0.17 W, and the terminal 31 and the p electrode 11 The amount of power generated during this period was 0.3W.

  Thus, in the concentrating photoelectric conversion device of the present embodiment having the above-described configuration, the forbidden band width is 1 on the light receiving surface of the silicon solar cell 10 made of silicon having a forbidden band width of about 1.1 eV. A first compound semiconductor solar cell 523 including a first pn junction 525 formed by a compound semiconductor layer that is not less than 0.8 eV and not more than 2 eV, and a forbidden band width is 1.4 eV below the first compound semiconductor solar cell 523. Since the light-receiving surface side multi-junction solar cell 20 having the second compound semiconductor solar cell 524 including the second pn junction 526 of the compound semiconductor layer of 1.6 eV or less is installed, it is collected in fine weather. In the light-receiving surface side multijunction solar cell 20 on which sunlight condensed by the optical lens 30 is incident, more efficient power generation is possible than in the first embodiment, and is implemented in cloudy weather. Generation of silicon solar cells 10 around the form 1 similarly to the light-receiving surface side multijunction solar cell 20 can be performed.

  Therefore, even in the concentrating photoelectric conversion device of the present embodiment, silicon can be used not only in fine weather but also in cloudy weather as compared with the conventional condensing photoelectric conversion device that can generate power efficiently only in fine weather. Since it is possible to suppress a decrease in the amount of power generation by the power generation of the solar cell 10, it is possible to obtain a large amount of power generation regardless of the weather. That is, in the condensing photoelectric conversion device of the present embodiment, it is possible to solve the problem that only direct light can be used and scattered light cannot be used.

  In the present embodiment, the first pn junction 525 is formed by joining an n-type AlInGaP emitter layer 56 having a forbidden band width of 1.8 eV or more and 2 eV or less and a p-type AlInGaP base layer 57. However, the material of the compound semiconductor layer forming the first pn junction 525 is at least one selected from the group consisting of AlGaAs, InGaP, InGaAsP, AlInGaP and AlInGaAsP whose forbidden band width is 1.8 eV or more and 2 eV or less. Is preferably used.

  In the present embodiment, the second pn junction 526 is formed by joining an n-type AlGaAs emitter layer 512 having a forbidden band width of 1.4 eV or more and 1.6 eV or less and a p-type AlGaAs base layer 513. However, the material of the compound semiconductor layer forming the second pn junction 526 is at least one selected from the group consisting of AlGaAs, InGaAsP and AlInGaAsP whose forbidden band width is 1.4 eV or more and 1.6 eV or less. Is preferably used.

Since other explanations are the same as those of the first embodiment, they are omitted.
<Embodiment 3>
FIG. 7A is a schematic cross-sectional view of still another example of the photoelectric conversion element used in the condensing photoelectric conversion device of the present invention.

  In the concentrating photoelectric conversion device according to the present embodiment, a back side multi-junction solar cell 70 is formed on the back side opposite to the light receiving surface side of the silicon solar cell 10, and the back side multi-junction solar cell 70. Is characterized by having a third compound semiconductor solar cell 713 including a third pn junction 714 that is a pn junction of a compound semiconductor layer having a forbidden band width of 0.6 eV or more and 0.8 eV or less. is there.

  Here, the third pn junction 714 includes a third n-type compound semiconductor layer stack 710 formed by stacking a plurality of n-type compound semiconductor layers, and the third n-type compound semiconductor layer stack. A third p-type compound semiconductor layer stack 79 formed by stacking a plurality of p-type compound semiconductor layers on the body 710 is joined.

  Further, an n-side electrode 711 is formed on the surface of the third n-type compound semiconductor layer stack 710 of the back-side multijunction solar cell 70, and the back surface of the third p-type compound semiconductor layer stack 79. A p-side electrode 712 is formed on the entire surface.

  Further, the back surface of the silicon solar cell 10 is not positioned above the first p-type impurity doping region 12 a positioned above the back surface side multijunction solar cell 70 and the back surface side multijunction solar cell 70. The second p-type impurity doping region 12b is formed at a predetermined interval, and the p-type impurity doping region 12 is formed by the first p-type impurity doping region 12a and the second p-type impurity doping region 12b. Is formed.

  Further, an L-shaped junction electrode 18 is formed on the periphery of the first p-type impurity doping region 12 a on the back surface of the silicon solar cell 10, and the first p-type impurity doping region 12 a and the junction electrode 18 are connected to each other. An insulating film 19 is formed in the region between them.

  Then, the n-side electrode 711 of the back side multi-junction solar cell 70 and the junction electrode 18 on the back side of the silicon solar cell 10 are electrically connected to form a photoelectric conversion element.

  FIG. 7B is a schematic perspective view of the photoelectric conversion element shown in FIG. 7A viewed from the light receiving surface side. As shown in FIG. 7B, the photoelectric conversion element of the present embodiment has a configuration in which a light receiving surface side multijunction solar cell 20 is installed at the center of the light receiving surface of the silicon solar cell 10. Here, the light-receiving surface side multi-junction solar cell 20 has the same configuration as the light-receiving surface-side multi-junction solar cell 20 in the second embodiment.

  FIG. 7C is a schematic perspective view of the photoelectric conversion element shown in FIG. As shown in FIG.7 (c), in the photoelectric conversion element of this Embodiment, the back surface side multijunction type solar cell 70 is installed in the center part of the back surface of the silicon solar cell 10, and a back surface side multijunction type | mold is used. A p-electrode 11 is formed so as to surround the entire outer periphery of the solar cell 70 with a predetermined interval.

  The photoelectric conversion elements shown in FIGS. 7A to 7C can be manufactured, for example, as follows.

  First, the silicon solar cell 10 having the configuration shown in FIG. 7A is formed in the same manner as in the first and second embodiments. Here, also in the present embodiment, the forbidden band widths of the p-type silicon substrate 13 and the n-type impurity doping region 14 of the silicon solar cell 10 are each about 1.1 eV.

  Then, in the same manner as in the second embodiment, the p-side electrode 522 of the light-receiving surface side multi-junction solar cell 20 is electrically connected to the junction electrode 16 on the light-receiving surface of the silicon solar cell 10 to thereby obtain a silicon solar cell. A light-receiving surface side multi-junction solar cell 20 is installed on 10.

  In addition to the joined body of the silicon solar cell 10 and the light-receiving-surface-side multijunction solar cell 20, the InP buffer layer 72, p on the InP substrate 71, as shown in the schematic configuration diagram of FIG. The InGaAs contact layer 73, the p-type InP back surface field layer 74, the p-type InGaAs base layer 75, the n-type InGaAs emitter layer 76, the n-type InP window layer 77, and the n-type InGaAs contact layer 78 are sequentially epitaxially grown by, for example, MOCVD. A compound semiconductor wafer is produced.

  Here, a p-type InGaAs contact layer 73, a p-type InP back surface field layer 74, and a p-type InGaAs base layer 75 constitute a third p-type compound semiconductor layer stack 79, and an n-type InGaAs emitter layer. 76, a third n-type compound semiconductor layer stack 710 is formed by a stack of the n-type InP window layer 77 and the n-type InGaAs contact layer 78.

  In the present embodiment, the forbidden band widths of the p-type InGaAs base layer 75 and the n-type InGaAs emitter layer 76 constituting the third pn junction 714 are 0.6 eV or more and 0.8 eV or less, respectively. Yes.

  Then, an n-side electrode 711 patterned in a predetermined shape is formed on the surface of the n-type InGaAs contact layer 78 of the compound semiconductor wafer, and cells are formed by dicing the compound semiconductor wafer into a square shape.

  Thereafter, the n-side electrode 711 of the cell formed as described above is electrically connected and fixed on the junction electrode 18 of the silicon solar cell 10 manufactured as described above.

  Then, with the cell fixed on the silicon solar cell 10, the InP substrate 71 and the InP buffer layer 72 of the cell are removed, and the surface of the p-type InGaAs contact layer 73 is exposed.

  Thereafter, a p-side electrode 712 is formed on the entire surface of the p-type InGaAs contact layer 73 exposed as described above. Here, as the p-side electrode 712, for example, a configuration in which a metal film is formed in the order of an Au—Zn film and an Ag film from the surface side of the p-type InGaAs contact layer 73 can be used.

When the InP compound semiconductor layer is epitaxially grown during the above epitaxial growth, for example, TMI and PH ₃ can be used as the raw material. In addition, when epitaxially growing an InGaAs compound semiconductor layer, for example, TMI, TMG, and AsH ₃ can be used as the raw material. The rest is the same as in the first and second embodiments.

  Through the above steps, a photoelectric conversion element having the structure illustrated in FIGS. 7A to 7C can be manufactured. Then, by attaching a condenser lens on the light receiving surface of the photoelectric conversion element thus manufactured in the same manner as in the first and second embodiments, the configuration shown in FIG. A condensing photoelectric conversion device having a configuration can be manufactured.

  Also in the present embodiment, the condensing lens 30 has an area of the light receiving surface of each light receiving surface side multi-junction solar cell 20 which is changed to the light receiving surface of the light receiving surface side multi junction solar cell 20 by each condensing lens 30. About the same as the area of the collected light (the area of the light receiving surface of the light receiving surface side multi-junction solar cell 20 is equal to the area of the light collected by the light collecting surface 30 on the light receiving surface of the light receiving surface side multi junction solar cell 20 It is installed so as to be 0.8 to 1.2 times the area. In addition, a back-side terminal (not shown) that collects power by electrically connecting the p-side electrode 712 of the back-side multi-junction solar cell 70 is also installed.

  Then, in the same manner as in the first and second embodiments, the condensing photoelectric conversion device having the above-described configuration is irradiated with pseudo sunlight from the condensing lens 30 side by the solar simulator, and the terminal 32 and the back surface side. The electrical characteristics between the terminal and between the terminal 31 and the p-electrode 11 were evaluated.

  That is, also in the concentrating photoelectric conversion device of the present embodiment, the first emitter layer 14a and the second emitter layer 14b of the silicon solar cell 10 are electrically separated from each other. The electric power generated between the n-side electrode 521 formed on the light-receiving surface of the junction solar cell 20 and the p-electrode 11 formed on the silicon solar cell 10 and the second emitter layer 14b of the silicon solar cell 10 The power generated between the n-electrode 15 formed on the first electrode and the p-electrode 11 formed on the silicon solar cell 10 can be separated.

  Further, in the concentrating photoelectric conversion device of the present embodiment, the first p-type impurity doping region 12a and the second p-type impurity doping region 12b of the silicon solar cell 10 are also electrically separated. The electric power generated between the p-side electrode 712 formed on the back surface of the back-side multi-junction solar cell 70 and the p-electrode 11 formed on the silicon solar cell 10, and the second emitter of the silicon solar cell 10 The power generated between the n-electrode 15 formed on the layer 14b and the p-electrode 11 formed on the silicon solar cell 10 can be separated.

  In addition, as in the case of the first and second embodiments, the electrical characteristics described above are obtained when the solar simulator is irradiated with pseudo-sunlight vertically with respect to the condenser lens 30 and when the light is inclined at 30 °. Each case was evaluated.

  As a result, when simulated sunlight is irradiated perpendicularly to the condensing lens 30, the amount of power generation between the terminal 32 and the back side terminal is 0.71 W, and between the terminal 31 and the p electrode 11. The power generation amount was 0.1 W.

  In addition, when simulated sunlight is irradiated at an angle of 30 ° with respect to the condenser lens 30, the power generation amount between the terminal 32 and the back side terminal is 0.19 W, and the terminal 31 and the p electrode 11 The amount of power generated during this period was 0.3W.

  Thus, in the concentrating photoelectric conversion device of the present embodiment having the above-described configuration, the forbidden band width is 1 on the light receiving surface of the silicon solar cell 10 made of silicon having a forbidden band width of about 1.1 eV. A first compound semiconductor solar cell 523 including a first pn junction 525 formed by a compound semiconductor layer that is not less than 0.8 eV and not more than 2 eV, and a forbidden band width is 1.4 eV below the first compound semiconductor solar cell 523. Since the light-receiving surface side multi-junction solar cell 20 having the second compound semiconductor solar cell 524 including the second pn junction 526 of the compound semiconductor layer of 1.6 eV or less is installed, it is collected in fine weather. In the light-receiving surface side multijunction solar cell 20 on which sunlight condensed by the optical lens 30 is incident, more efficient power generation is possible than in the first embodiment, and is implemented in cloudy weather. Generation of silicon solar cells 10 around the form 1 similarly to the light-receiving surface side multijunction solar cell 20 can be performed.

  Further, in the concentrating photoelectric conversion device of the present embodiment, the forbidden band of 0.6 eV or more and 0.8 eV or less having a forbidden band width smaller than that of silicon constituting the silicon solar cell 10 on the back surface of the silicon solar cell 10. Since the back side multi-junction solar cell 70 having the third pn junction 714 of the compound semiconductor layer is installed, the back side multi-junction solar cell 70 generates power by the incidence of longer wavelength sunlight. Further, the conversion efficiency is further increased as compared with the first embodiment and the second embodiment.

  Therefore, even in the concentrating photoelectric conversion device of the present embodiment, silicon can be used not only in fine weather but also in cloudy weather as compared with the conventional condensing photoelectric conversion device that can generate power efficiently only in fine weather. Since it is possible to suppress a decrease in the amount of power generation by the power generation of the solar cell 10, it is possible to obtain a large amount of power generation regardless of the weather. That is, in the condensing photoelectric conversion device of the present embodiment, it is possible to solve the problem that only direct light can be used and scattered light cannot be used.

  In the present embodiment, the third pn junction 714 is formed by bonding a p-type InGaAs base layer 75 having a forbidden band width of 0.6 eV or more and 0.8 eV or less and an n-type InGaAs emitter layer 76. However, the material of the compound semiconductor layer forming the third pn junction 714 is at least one selected from the group consisting of InGaAs, InGaAsP, and AlInGaAsP having a forbidden band width of 0.6 eV or more and 0.8 eV or less. Is preferably used.

Since other explanations are the same as those in the first and second embodiments, they are omitted.
In this specification, only the types of elements constituting the compound semiconductor layer are described, but this means that the composition ratio of the elements constituting the compound semiconductor layer is set as appropriate.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  ADVANTAGE OF THE INVENTION According to this invention, the condensing photoelectric conversion apparatus which enabled suppression of the fall of the electric power generation amount at the time of cloudy weather and obtained many electric power generation amounts irrespective of the weather can be provided.

(A) is typical sectional drawing of an example of the photoelectric conversion element used for the condensing photoelectric conversion apparatus of this invention, (b) is the model which looked at the photoelectric conversion element shown to (a) from the light-receiving surface side. It is a typical perspective view, (c) is the typical perspective view which looked at the photoelectric conversion element shown to (a) from the back surface side. It is a typical block diagram illustrating a part of formation process of the joining electrode of the photoelectric conversion element shown to Fig.1 (a)-(c). It is a typical block diagram illustrating a part of formation process of the light-receiving surface side multijunction solar cell used for preparation of the photoelectric conversion element shown to Fig.1 (a)-(c). (A) shows the typical top view of the condensing photoelectric conversion apparatus of this invention, (b) is typical sectional drawing of the condensing photoelectric conversion apparatus shown to (a). (A) is typical sectional drawing of the other example of the photoelectric conversion element used for the condensing photoelectric conversion apparatus of this invention, (b) sees the photoelectric conversion element shown to (a) from the light-receiving surface side. It is the typical perspective view, (c) is the typical perspective view which looked at the photoelectric conversion element shown to (a) from the back surface side. It is a typical block diagram illustrating a part of formation process of the light-receiving surface side multijunction solar cell used for preparation of the photoelectric conversion element shown to Fig.1 (a)-(c). (A) is typical sectional drawing of further another example of the photoelectric conversion element used for the condensing photoelectric conversion apparatus of this invention, (b) is the photoelectric conversion element shown to (a) from the light-receiving surface side. It is the typical perspective view which looked, (c) is the typical perspective view which looked at the photoelectric conversion element shown to (a) from the back surface side. It is a typical block diagram illustrating a part of formation process of the light-receiving surface side multijunction solar cell used for preparation of the photoelectric conversion element shown to Fig.1 (a)-(c).

Explanation of symbols

  10 silicon solar cell, 11 p electrode, 12 p-type impurity doping region, 12a first p-type impurity doping region, 12b second p-type impurity doping region, 13 p-type silicon substrate, 14 n-type impurity doping region, 14a First emitter layer, 14b Second emitter layer, 15 n electrode, 16, 18 junction electrode, 17, 19 insulating film, 20 light-receiving surface side multi-junction solar cell, 21, 51 GaAs substrate, 22, 52 GaAs buffer Layer, 23, 53 InGaP etching stop layer, 24, 54 n-type GaAs contact layer, 25, 55 n-type AlInP window layer, 26 n-type InGaP emitter layer, 27 p-type InGaP base layer, 28 p-type AlInP back surface field layer, 29 p-type GaAs contact layer, 30 condenser lens, 31, 32 terminals, 5 n-type AlInGaP emitter layer, 57 p-type AlInGaP base layer, 58 p-type AlInP back surface field layer, 59 p-type AlGaAs tunnel junction layer, 70 back-side multi-junction solar cell, 71 InP substrate, 72 InP buffer layer, 73 p-type InGaAs contact layer, 74 p-type InP back surface field layer, 75 p-type InGaAs base layer, 76 n-type InGaAs emitter layer, 77 n-type InP window layer, 78 n-type InGaAs contact layer, 79 third p-type compound semiconductor layer stack Body, 210 n-type compound semiconductor layer stack, 211 p-type compound semiconductor layer stack, 212, 521, 711 n-side electrode, 213, 522, 712 p-side electrode, 214 pn junction, 215 compound semiconductor solar cell, 510 n-type AlInGaP tunnel junction layer, 511 n-type AlI nP window layer, 512 n-type AlGaAs emitter layer, 513 p-type AlGaAs base layer, 514 p-type InGaP back surface field layer, 515 p-type GaAs contact layer, 516 first n-type compound semiconductor layer stack, 517 first p Type compound semiconductor layer stack, 518 tunnel junction, 519 second n-type compound semiconductor layer stack, 520 second p-type compound semiconductor layer stack, 523 first compound semiconductor solar cell, 524 second compound semiconductor Solar cell, 525 first pn junction, 526 second pn junction, 710 third n-type compound semiconductor layer stack, 713 third compound semiconductor solar cell, 714 third pn junction.

Claims (9)

A condenser lens, and a photoelectric conversion element installed at a position facing the condenser lens,
The photoelectric conversion element is a silicon solar cell, and a light receiving surface side multi-junction type installed on the surface of the silicon solar cell on the installation side of the condenser lens so as to be electrically connected to the silicon solar cell. A solar cell,
The area of the light receiving surface which is the surface of the light receiving surface side multi-junction solar cell on the installation side of the condensing lens is 0.8 or more of the area of the light collected on the light receiving surface by the condensing lens. I 2 times or less der,
The light receiving surface of the silicon solar cell is arranged extending around the light receiving surface side multi-junction solar cell,
A first emitter layer and a second emitter layer on the surface of the silicon solar cell on the installation side of the condenser lens;
The first emitter layer is formed below the light-receiving surface side multi-junction solar cell,
The second emitter layer is formed on the light receiving surface of the silicon solar cell arranged in an extended manner,
The first emitter layer and the second emitter layer formed adjacent to the first emitter layer are electrically separated ;
A second electrode is provided on the second emitter layer;
A condensing photoelectric conversion device in which a third electrode is provided on the surface of the silicon solar cell opposite to the side on which the condensing lens is installed . The first emitter layer of the silicon solar cell and the p-type layer of the light-receiving surface side multijunction solar cell are electrically connected, and the condenser lens of the light-receiving surface side multijunction solar cell. The first electrode is provided on the surface on the installation side, the first electrode is an n electrode, the second electrode is an n electrode, and the third electrode is a p electrode. The condensing photoelectric conversion device according to claim 1, wherein:   The light-receiving surface side multijunction solar cell includes a compound semiconductor solar cell including one pn junction of a compound semiconductor layer having a forbidden band width of 1.7 eV or more and 1.9 eV or less. Or the condensing photoelectric conversion apparatus of 2.   The condensing photoelectric conversion device according to claim 3, wherein the compound semiconductor layer is at least one selected from the group consisting of AlGaAs, InGaP, InGaAsP, AlInGaP, and AlInGaAsP.   The light-receiving surface side multi-junction solar cell includes a first compound semiconductor solar cell including a first pn junction of a first compound semiconductor layer having a forbidden band width of 1.8 eV or more and 2 eV or less; And a second compound semiconductor solar cell including a second pn junction of a second compound semiconductor layer having a forbidden band width of 1.4 eV or more and 1.6 eV or less below the compound semiconductor solar cell, The condensing photoelectric conversion apparatus according to claim 1 or 2.   The first compound semiconductor layer is at least one selected from the group consisting of AlGaAs, InGaP, InGaAsP, AlInGaP and AlInGaAsP, and the second compound semiconductor layer is selected from the group consisting of AlGaAs, InGaAsP and AlInGaAsP. The condensing photoelectric conversion device according to claim 5, wherein the condensing photoelectric conversion device is at least one kind. The light-receiving surface side multi-junction solar cell includes a first compound semiconductor solar cell including a first pn junction of a first compound semiconductor layer having a forbidden band width of 1.8 eV or more and 2 eV or less; A second compound semiconductor solar cell including a second pn junction of a second compound semiconductor layer having a forbidden band width of 1.4 eV or more and 1.6 eV or less below the compound semiconductor solar cell;
A back side multi-junction solar cell is installed on the surface of the silicon solar cell opposite to the side where the condenser lens is installed so as to be electrically connected to the silicon solar cell, and the back side The multi-junction solar cell includes a third compound semiconductor solar cell including a third pn junction of a third compound semiconductor layer having a forbidden band width of 0.6 eV or more and 0.8 eV or less. The condensing photoelectric conversion apparatus according to claim 1 or 2.   The first compound semiconductor layer is at least one selected from the group consisting of AlGaAs, InGaP, InGaAsP, AlInGaP and AlInGaAsP, and the second compound semiconductor layer is selected from the group consisting of AlGaAs, InGaAsP and AlInGaAsP. 8. The concentrating photoelectric device according to claim 7, wherein the third compound semiconductor layer is at least one selected from the group consisting of InGaAs, InGaAsP, and AlInGaAsP. Conversion device. The power generated between the first electrode and the third electrode can be separated from the power generated between the second electrode and the third electrode, The condensing photoelectric conversion apparatus according to claim 2 .

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