CN116936714B - Micro light-emitting unit display panel and manufacturing method thereof - Google Patents

Micro light-emitting unit display panel and manufacturing method thereof Download PDF

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Publication number
CN116936714B
CN116936714B CN202311199353.4A CN202311199353A CN116936714B CN 116936714 B CN116936714 B CN 116936714B CN 202311199353 A CN202311199353 A CN 202311199353A CN 116936714 B CN116936714 B CN 116936714B
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light emitting
micro light
emitting unit
display panel
substrate
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CN116936714A (en
Inventor
李雍
瞿澄
刘斌
陈文娟
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Luohuaxin Display Technology Development Jiangsu Co ltd
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Luohuaxin Display Technology Development Jiangsu Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)

Abstract

The application relates to a miniature light-emitting unit display panel and a manufacturing method thereof, and relates to the technical field of semiconductor display. In the method for manufacturing the micro light emitting unit display panel of the present application, the first transfer substrate is provided in a manner that: providing an elastic resin substrate, forming a plurality of grooves in matrix arrangement on the elastic resin substrate, embedding a rigid bump in each groove, wherein a part of each rigid bump protrudes out of the upper surface of the elastic resin substrate, so that a plurality of rigid substrates in array arrangement and stretchable areas between adjacent rigid substrates are formed on the elastic resin substrate.

Description

Micro light-emitting unit display panel and manufacturing method thereof
Technical Field
The application relates to the technical field of semiconductor display, in particular to a miniature light-emitting unit display panel and a manufacturing method thereof.
Background
The display panel generally includes an organic display panel and an inorganic display panel, the organic display panel is mainly driven by an electric field, and an organic semiconductor material and a light emitting material realize light emission after carrier injection and recombination. The organic display panel has the defects of difficult large size, short service life, complex process and the like. The display principle of the inorganic display panel is that the inorganic light emitting diode structure is designed to be thin-film, miniaturized and arrayed, then the micro light emitting units are transferred to the driving circuit substrate in batches, then the preparation of the protective layer and the upper electrode is completed by utilizing the physical vapor deposition and/or chemical vapor deposition process, and finally the upper substrate is packaged to obtain the micro light emitting unit display panel.
Significant technical challenges of miniature light emitting cell display panels include: and the mass transfer technology aims at adhering and fixing a plurality of micro light emitting diode chips on the preset position of the light emitting substrate. In the mass transfer technology, how to precisely control the distance between adjacent micro light emitting units, so as to ensure the precise alignment of the micro light emitting units and the pixel electrode of the driving substrate is a problem of great concern in the industry.
Disclosure of Invention
The present application is directed to a display panel with a micro light emitting unit and a method for manufacturing the same.
In order to achieve the above object, the present application provides a method for manufacturing a display panel of a micro light emitting unit, comprising:
providing an elastic resin substrate, forming a plurality of grooves in a matrix arrangement on the elastic resin substrate, embedding a rigid bump in each groove, wherein a part of each rigid bump protrudes out of the upper surface of the elastic resin substrate so as to form a plurality of rigid substrates in an array arrangement and stretchable areas between adjacent rigid substrates on the elastic resin substrate, so as to form a first transfer substrate.
Providing a light-emitting wafer, and cutting the light-emitting wafer to form a plurality of micro light-emitting units.
Transferring a plurality of said micro-lighting units onto said first transfer substrate such that each of said micro-lighting units is transferred onto a respective one of said rigid substrates.
The first transfer substrate is stretched from four sides of the first transfer substrate such that the stretchable regions between adjacent rigid substrates are stretched.
And providing a fixing module, and fixing four sides of the first transfer substrate by using the fixing module so that the first transfer substrate is kept in a stretched state.
And then forming a black packaging layer on the first transfer substrate, wherein the black packaging layer fills gaps between any adjacent micro light emitting units and covers the micro light emitting units, and then curing the black packaging layer to form a micro light emitting unit packaging body.
And then peeling the first transfer substrate and transferring the miniature light emitting unit package body onto a driving circuit board.
As a preferable technical scheme, the grooves are formed by laser ablation or cutter cutting, and the ratio of the depth of the grooves to the thickness of the elastic resin substrate is not less than 0.9.
As a preferable technical scheme, the rigid bump is made of glass, metal, sapphire or semiconductor, a bonding material is arranged in the groove, and the rigid bump is bonded in the corresponding groove of the elastic resin substrate by using the bonding material.
Preferably, the ratio of the height of the portion of the rigid bump protruding from the elastic resin substrate to the thickness of the rigid bump is 0.3-0.5.
As an preferable technical scheme, the fixing module comprises a bearing substrate and fixing columns positioned at the peripheral edges of the bearing substrate.
As a preferable embodiment, the first transfer substrate held in a stretched state is fixed by the fixing column.
As a preferable technical scheme, after the micro light emitting unit package is transferred onto the driving circuit board, a second package layer is formed.
The application also provides a micro light-emitting unit display panel which is manufactured by adopting the manufacturing method of the micro light-emitting unit display panel.
The application has the beneficial effects that:
in the existing transferring process of the miniature luminous units, the miniature luminous units are directly transferred onto the flexible adhesive film, so that the flexible adhesive film is directly stretched, and the distance between adjacent miniature luminous units cannot be well ensured in the existing transferring process. In the method for manufacturing a micro light emitting unit display panel of the present application, the first transfer substrate is provided in the following manner: providing an elastic resin substrate, forming a plurality of grooves in matrix arrangement on the elastic resin substrate, embedding a rigid bump in each groove, wherein a part of each rigid bump protrudes out of the upper surface of the elastic resin substrate, so that a plurality of rigid substrates in array arrangement and stretchable areas between adjacent rigid substrates are formed on the elastic resin substrate. And the ratio of the depth of the groove to the thickness of the elastic resin substrate is not less than 0.9, and the ratio of the height of the part of the rigid bump protruding out of the elastic resin substrate to the thickness of the rigid bump is 0.3-0.5, so that the stability of the first transfer substrate can be ensured.
Further, four sides of the first transfer substrate are fixed by the fixing module, so that the first transfer substrate is kept in a stretched state, then a black packaging layer is formed on the first transfer substrate, the black packaging layer fills gaps between any adjacent micro light emitting units and covers the micro light emitting units, then the black packaging layer is solidified to form a micro light emitting unit packaging body, and then the micro light emitting unit packaging body is transferred to the driving circuit board.
Drawings
Fig. 1 is a schematic structural view of a first transfer substrate according to an embodiment of the application.
Fig. 2 is a schematic diagram showing a structure of transferring a plurality of micro light emitting units onto a first transfer substrate according to an embodiment of the application.
Fig. 3 is a schematic structural diagram of a first transfer substrate fixed by a fixing module according to an embodiment of the application.
Fig. 4 is a schematic structural diagram illustrating a black encapsulation layer formed on a first transfer substrate according to an embodiment of the present application.
Fig. 5 is a schematic diagram showing a structure of transferring a micro light emitting unit package to a driving circuit board according to an embodiment of the present application.
Description of the embodiments
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the application. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
As shown in fig. 1 to 5, the present embodiment provides a method for manufacturing a display panel of a micro light emitting unit, including:
as shown in fig. 1, an elastic resin substrate 101 is provided, a plurality of grooves arranged in a matrix are formed on the elastic resin substrate 101, a rigid bump 102 is embedded in each groove, and a portion of each rigid bump 102 protrudes from the upper surface of the elastic resin substrate 101, so that a plurality of rigid substrates 102 arranged in an array and stretchable regions 103 between adjacent rigid substrates 102 are formed on the elastic resin substrate 101 to form a first transfer substrate 100.
In a specific embodiment, the grooves are formed by laser ablation or cutter cutting, and the ratio of the depth of the grooves to the thickness of the elastic resin substrate 101 is not less than 0.9, so that the above-mentioned arrangement of the proportional relationship can ensure that the region where the rigid bump 102 is located is not stretched.
In a specific embodiment, the material of the rigid bump 102 is glass, metal, sapphire or semiconductor, and a bonding material is disposed in the groove, and the rigid bump 102 is bonded to the corresponding groove of the elastic resin substrate 101 by using the bonding material.
In a specific embodiment, the ratio of the height of the portion of the rigid bump 102 protruding from the elastic resin substrate 101 to the thickness of the rigid bump 102 is 0.3-0.5, so as to facilitate the transfer of the micro light emitting unit.
In a specific embodiment, the elastic resin substrate 101 may be made of a suitable material such as rubber, acrylic, or polyester. More specifically, silicone rubber is possible.
As shown in fig. 2, a light emitting wafer 200 is provided, and dicing is performed on the light emitting wafer to form a plurality of micro light emitting units 201.
In a specific embodiment, the preparation process of the light emitting wafer 200 may specifically be: an undoped gallium nitride is grown on a sapphire substrate as a buffer layer, then an N-type doped gallium nitride layer is grown on the undoped gallium nitride as an electron injection layer, then a gallium nitride/indium gallium nitride superlattice structure is grown on the N-type gallium nitride layer as an active light emitting layer, wherein gallium nitride is used as a barrier layer, indium gallium nitride is used as a potential well layer, then a P-type doped gallium nitride layer is grown on the active light emitting layer as a hole injection layer, then a current expansion layer is grown on the P-type doped gallium nitride layer, wherein the current expansion layer can be specifically indium tin oxide, a composite metal layer or aluminum doped zinc oxide, and then a metal material such as copper, aluminum, gold, silver, palladium and other suitable metals is deposited through a physical vapor deposition process or a chemical vapor deposition process so as to form conductive bumps. More specifically, the light emitting wafer 200 may emit red, green or blue light.
In a specific embodiment, a plurality of discrete micro light emitting units 201 are formed after the mechanical dicing process or the laser dicing process.
As shown in fig. 3, a plurality of the micro light emitting units 201 are transferred onto the first transfer substrate 100 such that each of the micro light emitting units 201 is transferred onto a corresponding one of the rigid substrates 102. The first transfer substrate 100 is then stretched from four sides of the first transfer substrate 100 such that the stretchable regions 103 between adjacent rigid matrices 102 are stretched. Next, a fixing module is provided, and four sides of the first transfer substrate 100 are fixed by the fixing module, so that the first transfer substrate 100 is kept in a stretched state.
In a specific embodiment, the fixing module includes a carrier substrate 301, and fixing columns 302 located at the peripheral edge of the carrier substrate 301. The first transfer substrate 100 held in a stretched state is fixed by the fixing posts 302.
In a specific embodiment, the material of the carrier substrate 301 and the fixing post 302 is a rigid material, more specifically a metal material. In a preferred embodiment, a plurality of fixing pins 302 are respectively disposed at four edges of the carrier substrate 301.
As shown in fig. 4, a black encapsulation layer 400 is then formed on the first transfer substrate 100, the black encapsulation layer 400 filling the gap between any adjacent micro light emitting units 201 and covering the micro light emitting units 201, and then the black encapsulation layer 400 is cured to form a micro light emitting unit package.
In a specific embodiment, the black encapsulation layer 400 includes an epoxy, a black dye, and an auxiliary agent. The black encapsulation layer 400 is formed by printing, dispensing, knife coating, thermal compression, and the like. The black encapsulation layer 400 may effectively protect the micro light emitting unit 201 from optical crosstalk.
In a specific embodiment, the black encapsulation layer 400 may be thinned to expose the conductive bumps of the micro light emitting units 201.
As shown in fig. 5, the first transfer substrate 100 is then peeled off, and the micro light emitting unit package is transferred onto the driving circuit board 600.
In a specific embodiment, the second encapsulation layer 700 is formed after the micro light emitting unit package is transferred onto the driving circuit board 600.
In a specific embodiment, the second encapsulation layer 700 is a transparent encapsulation layer, and more specifically, the second encapsulation layer 700 is an epoxy encapsulation layer.
In a specific embodiment, the driving circuit board 600 has conductive pads therein electrically connected to the conductive bumps of the micro light emitting unit 201.
In a specific embodiment, the second encapsulation layer 700 encapsulates the black encapsulation layer 400.
As shown in fig. 5, the present application further provides a micro light emitting unit display panel, which is manufactured by the manufacturing method of the micro light emitting unit display panel.
In other preferred embodiments, the method for manufacturing a display panel of a micro light emitting unit according to the present application includes:
providing an elastic resin substrate, forming a plurality of grooves in a matrix arrangement on the elastic resin substrate, embedding a rigid bump in each groove, wherein a part of each rigid bump protrudes out of the upper surface of the elastic resin substrate so as to form a plurality of rigid substrates in an array arrangement and stretchable areas between adjacent rigid substrates on the elastic resin substrate, so as to form a first transfer substrate.
Providing a light-emitting wafer, and cutting the light-emitting wafer to form a plurality of micro light-emitting units.
Transferring a plurality of said micro-lighting units onto said first transfer substrate such that each of said micro-lighting units is transferred onto a respective one of said rigid substrates.
The first transfer substrate is stretched from four sides of the first transfer substrate such that the stretchable regions between adjacent rigid substrates are stretched.
And providing a fixing module, and fixing four sides of the first transfer substrate by using the fixing module so that the first transfer substrate is kept in a stretched state.
And then forming a black packaging layer on the first transfer substrate, wherein the black packaging layer fills gaps between any adjacent micro light emitting units and covers the micro light emitting units, and then curing the black packaging layer to form a micro light emitting unit packaging body.
And then peeling the first transfer substrate and transferring the miniature light emitting unit package body onto a driving circuit board.
In a more preferable technical scheme, the grooves are formed by laser ablation or cutter cutting, and the ratio of the depth of the grooves to the thickness of the elastic resin substrate is not less than 0.9.
In a more preferable technical solution, the rigid bump is made of glass, metal, sapphire or semiconductor, a bonding material is disposed in the groove, and the rigid bump is bonded in the corresponding groove of the elastic resin substrate by using the bonding material.
In a more preferable embodiment, a ratio of a height of the portion of the rigid bump protruding from the elastic resin substrate to a thickness of the rigid bump is 0.3 to 0.5.
In a more preferable technical scheme, the fixing module comprises a bearing substrate and fixing columns positioned at the peripheral edges of the bearing substrate.
In a more preferable embodiment, the first transfer substrate held in a stretched state is fixed by the fixing column.
In a more preferable technical scheme, after the micro light emitting unit package is transferred onto the driving circuit board, a second package layer is formed.
In a preferred technical scheme, the application further provides a micro light-emitting unit display panel which is manufactured by the manufacturing method of the micro light-emitting unit display panel.
In the existing transferring process of the miniature luminous units, the miniature luminous units are directly transferred onto the flexible adhesive film, so that the flexible adhesive film is directly stretched, and the distance between adjacent miniature luminous units cannot be well ensured in the existing transferring process. In the method for manufacturing a micro light emitting unit display panel of the present application, the first transfer substrate is provided in the following manner: providing an elastic resin substrate, forming a plurality of grooves in matrix arrangement on the elastic resin substrate, embedding a rigid bump in each groove, wherein a part of each rigid bump protrudes out of the upper surface of the elastic resin substrate, so that a plurality of rigid substrates in array arrangement and stretchable areas between adjacent rigid substrates are formed on the elastic resin substrate. And the ratio of the depth of the groove to the thickness of the elastic resin substrate is not less than 0.9, and the ratio of the height of the part of the rigid bump protruding out of the elastic resin substrate to the thickness of the rigid bump is 0.3-0.5, so that the stability of the first transfer substrate can be ensured.
Further, four sides of the first transfer substrate are fixed by the fixing module, so that the first transfer substrate is kept in a stretched state, then a black packaging layer is formed on the first transfer substrate, the black packaging layer fills gaps between any adjacent micro light emitting units and covers the micro light emitting units, then the black packaging layer is solidified to form a micro light emitting unit packaging body, and then the micro light emitting unit packaging body is transferred to the driving circuit board.
The above embodiments are merely illustrative of the principles of the present application and its effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the application. Accordingly, it is intended that all equivalent modifications and variations of the application be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (8)

1. A manufacturing method of a display panel of a miniature light emitting unit is characterized in that: comprising the following steps:
providing an elastic resin substrate, forming a plurality of grooves in a matrix arrangement on the elastic resin substrate, embedding a rigid bump in each groove, wherein a part of each rigid bump protrudes out of the upper surface of the elastic resin substrate so as to form a plurality of rigid substrates in an array arrangement and stretchable areas between adjacent rigid substrates on the elastic resin substrate so as to form a first transfer substrate;
providing a light-emitting wafer, and cutting the light-emitting wafer to form a plurality of micro light-emitting units;
transferring a plurality of said micro-lighting units onto said first transfer substrate such that each said micro-lighting unit is transferred onto a respective one of said rigid substrates;
stretching the first transfer substrate from four sides of the first transfer substrate such that the stretchable region between adjacent rigid substrates is stretched;
providing a fixing module, and fixing four sides of the first transfer substrate by using the fixing module so as to keep the first transfer substrate in a stretched state;
then forming a black packaging layer on the first transfer substrate, wherein the black packaging layer fills gaps between any adjacent micro light-emitting units and covers the micro light-emitting units, and then curing the black packaging layer to form a micro light-emitting unit packaging body;
and then peeling the first transfer substrate and transferring the miniature light emitting unit package body onto a driving circuit board.
2. The method of manufacturing a micro light emitting unit display panel according to claim 1, wherein: the grooves are formed by laser ablation or cutter cutting, and the ratio of the depth of the grooves to the thickness of the elastic resin substrate is not less than 0.9.
3. The method of manufacturing a micro light emitting unit display panel according to claim 1, wherein: the rigid bump is made of glass, metal, sapphire or semiconductor, a bonding material is arranged in the groove, and the rigid bump is bonded into the corresponding groove of the elastic resin substrate by using the bonding material.
4. The method for manufacturing a micro light emitting unit display panel according to claim 3, wherein: the ratio of the height of the portion of the rigid bump protruding from the elastic resin substrate to the thickness of the rigid bump is 0.3-0.5.
5. The method of manufacturing a micro light emitting unit display panel according to claim 1, wherein: the fixing module comprises a bearing substrate and fixing columns positioned at the peripheral edges of the bearing substrate.
6. The method of manufacturing a micro light emitting unit display panel according to claim 5, wherein: and fixing the first transfer substrate in a stretched state by the fixing column.
7. The method of manufacturing a micro light emitting unit display panel according to claim 1, wherein: after the micro light emitting unit package is transferred onto the driving circuit board, a second package layer is formed.
8. A micro light emitting unit display panel manufactured by the manufacturing method of the micro light emitting unit display panel according to any one of claims 1 to 7.
CN202311199353.4A 2023-09-18 2023-09-18 Micro light-emitting unit display panel and manufacturing method thereof Active CN116936714B (en)

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