KR20190004136A - Display device using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a display device with improved light efficiency and a manufacturing method thereof, and more specifically, to a display device using a semiconductor light emitting devices. According to the present invention, the display device comprises: a substrate; a plurality of semiconductor light emitting devices assembled on the substrate; and a heat dissipation member configured to emit light of the semiconductor light emitting devices. The heat dissipation member is inserted into the substrate, and the semiconductor light emitting devices are assembled on one surface of the heat dissipation member.

Description

Technical Field [0001] The present invention relates to a display device using a semiconductor light-

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting device.

In recent years, display devices having excellent characteristics such as a thin shape and a flexible shape in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes).

However, in the case of an LCD, there is a problem that the reaction time is not fast and the implementation of the flexible is difficult. In the case of the AMOLED, there is a weak point that the life span is short and the mass production yield is not good.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a display using the semiconductor light emitting device can be presented.

There is a risk that the semiconductor light emitting device is damaged by heat generated during operation of the semiconductor light emitting device, and the operation efficiency is also lowered. Therefore, there is a need to improve the heat radiation performance of the flexible display device using the semiconductor light emitting device, which is capable of emitting heat generated in the semiconductor light emitting device.

In order to improve the heat dissipation performance of the display device, a structure capable of emitting the heat from the substrate connected to the semiconductor light emitting device must be secured as much as possible. Accordingly, the present invention provides a structure capable of ensuring heat radiation performance in a flexible substrate.

An object of the present invention is to provide a structure of a display device with improved heat dissipation performance.

Another object of the present invention is to provide a structure of a display device with improved light efficiency.

The semiconductor light emitting device includes a display substrate according to the present invention, a plurality of semiconductor light emitting devices assembled to the substrate, and a heat dissipating member configured to emit heat of the semiconductor light emitting devices, wherein the heat dissipating member is inserted into the substrate, And may be assembled to one surface of the heat dissipating member.

In an embodiment, the heat dissipating member may be a metal having a heat conduction characteristic. The metal having the heat conduction characteristics may be selected from the group consisting of copper, aluminum, a copper alloy, and an aluminum alloy. The thickness of the heat dissipating member may be in the range of 20 to 200 μm.

In an embodiment, the substrate may be selected from the group consisting of polyimide, fluoropolymer resin, polyester, polyacrylate, polyamide, and polycarbonate. The thickness of the substrate may be in the range of 20 to 200 mu m.

In an exemplary embodiment, a coating layer may be formed between the heat dissipating member and the semiconductor light emitting device to cover at least a part of the heat dissipating member. The coating layer is formed to reflect light emitted from the semiconductor light emitting device, and the coating layer may be selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), and aluminum (Al). In addition, the coating layer may be formed to make an ohmic contact between the semiconductor light emitting device and the heat radiation member. The coating layer may further include chromium (Cr).

In an embodiment, the semiconductor light emitting device may include an insulating member at least partially surrounding the semiconductor light emitting device. The insulating member may further include a light reflection material or a wavelength conversion material.

In the display device according to the present invention, heat released from the semiconductor light emitting device by the substrate having the heat dissipating member inserted therein is quickly radiated to the outside, and heat radiation performance can be improved.

In addition, in the present invention, the light efficiency of the display device can be improved by the structure of the semiconductor light emitting devices formed to be surrounded by the insulating member including the light reflecting material or the wavelength converting material.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along the line CC of Fig.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
Fig. 10 is an enlarged view of a portion A of Fig. 1 for explaining another embodiment of the present invention of a display device of a new structure.
11 is a cross-sectional view taken along line EE in Fig.
12A to 12C are cross-sectional views illustrating a method of manufacturing the display device of the present invention.
13 is a cross-sectional view of display devices for explaining another embodiment of the present invention.
14 to 15 are sectional views of a display device for explaining another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in the thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the display device of the present invention described above, there is a problem that the heat emitted from the semiconductor light emitting device is not smoothly discharged only by the electrode wiring of the substrate. This is because the electrode wiring of the substrate has a limited ability to perform heat dissipation so as to emit heat emitted from the semiconductor light emitting device.

In the present invention, a display device of a new structure capable of solving such a problem is presented. Hereinafter, a display device having a structure in which heat emitted from a semiconductor light emitting device is emitted by a substrate into which a heat dissipating member is inserted to improve heat dissipation performance will be described.

Fig. 10 is an enlarged view of a portion A of Fig. 1 for explaining another embodiment of the present invention of a display device of a new structure. 11 is a cross-sectional view taken along the line E-E in Fig.

Referring to FIGS. 10 and 11, a display device 1000 using a passive matrix (PM) type semiconductor light emitting device as a display device 1000 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 1000 includes a substrate 1010, a heat dissipating member 1011, an insulating member 1030, a second electrode 1040, and a plurality of vertical semiconductor light emitting devices 1050.

The substrate 1010 is a substrate into which the heat dissipating member 1011 can be inserted. The substrate 1010 may be formed of a polyimide, a fluoropolymer resin, a polyester, a polyacrylate, a polyamide, and a polycarbonate to implement a flexible display device ≪ / RTI > In addition, any insulating material and flexible material can be used.

The radiation member 1011 may be configured to emit heat of the vertical type semiconductor light emitting devices 1050. In order to easily dissipate the heat generated during the operation of the vertical semiconductor light emitting device 1050, the heat dissipating member 1011 may be a metal having heat conduction characteristics. In an embodiment, the heat dissipating member 1011 may be selected from the group consisting of copper, aluminum, a copper alloy, and an aluminum alloy having excellent heat conduction characteristics. The radiation member 1011 may be preferably copper.

Further, the heat dissipating member 1011 may be a conduit inserted into the substrate 1010 to smoothly dissipate heat generated in the vertical semiconductor light emitting device 1050. That is, the radiation member 1011 may be inserted into the substrate 1010 and penetrate the substrate. In detail, the thickness of the heat radiation member 1011 may be in the range of 20 to 200 占 퐉. When the thickness of the heat radiation member 1011 is less than 20 mu m, heat generated in the vertical type semiconductor light emitting device 1050 can not be radiated sufficiently. On the other hand, if the thickness of the heat radiation member 1011 exceeds 200 μm, the entire thickness of the display device may increase, causing a problem in the packaging process of the display device, A problem that the flexibility of the display device is lowered may be caused.

In addition, the thickness of the substrate 1010 into which the heat dissipating member 1011 is inserted may also be in the range of 20 to 200 占 퐉. Further preferably, the thickness of the substrate 1010 may range from 25 占 퐉 to 200 占 퐉. If the thickness of the substrate 1010 is less than 20 탆, the supporting force of the heat dissipating member 1011 may be lowered and the heat dissipating member 1011 inserted into the substrate 1010 may be detached. On the other hand, when the thickness of the substrate 1010 is more than 200 μm, the total thickness of the display device increases, which is similar to the case where the thickness of the heat radiation member 1011 increases, May be induced.

In an embodiment, the heat dissipating member 1011 may be formed to be thicker than the substrate 1010 and protrude from the substrate 1010 as shown in Figs. 10 and 11. When the heat dissipating member 1011 is formed to protrude from the substrate 1010, the volume charged by the insulating member 1030 described later may increase, so that the light efficiency of the display device may be improved. The insulating member 1030 will be described in detail below.

The substrate 1010 may be thicker than the heat dissipating member 1011 so that the heat dissipating member 1011 is settled from the substrate 1010. The heat dissipating member formed to be settled from the substrate will be described later with reference to FIG.

In order to efficiently dissipate heat generated by the vertical semiconductor light emitting device 1050, the heat dissipating member 1011 has an area in contact with the vertical semiconductor light emitting device 1050, Can be formed with a wider width than the lower width that does not touch. In detail, the width of the heat radiation member 1011 in contact with the vertical type semiconductor light emitting device 1050 may be 200 μm or more. That is, the width of the heat radiation member 1011 in contact with the vertical type semiconductor light emitting device 1050 may be larger than the width of the vertical type semiconductor light emitting device 1050. The description of the shape of the heat dissipating member 1011 is merely exemplary and the present invention is not limited thereto.

When the vertical semiconductor light emitting device 1050 is a vertical semiconductor light emitting device, the heat dissipating member 1011 is electrically connected to the first conductive electrode 1056 of the vertical semiconductor light emitting device 1050, It can also play a role.

Meanwhile, a coating layer 1012 may be formed between the heat dissipating member 1011 and the vertical semiconductor light emitting device 1050 so as to cover at least a part of the heat dissipating member. The coating layer 1012 may be disposed under the vertical semiconductor light emitting device 1050 in detail. In an embodiment, the coating layer 1012 may be selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), aluminum (Al), and chromium (Cr).

The coating layer 1012 may serve to reflect the light of the vertical semiconductor light emitting device 1050 disposed under the vertical semiconductor light emitting device 1050 and proceeding downward of the vertical semiconductor light emitting device 1050 have. The coating layer 1012 may be selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), and aluminum (Al) to reflect light of the vertical type semiconductor light emitting device 1050.

11, when the vertical semiconductor light emitting device 1050 is attached to the heat dissipating member 1011, the coating layer 1012 may form an ohmic contact as well as a reflection function. In detail, the coating layer 1012 may form an ohmic contact with the first conductive type electrode 1056 of the vertical type semiconductor light emitting device 1050. The coating layer 1012 may include silver (Ag) or chromium (Cr) capable of forming an ohmic contact.

When a vertical semiconductor light emitting device 1050 is attached to the heat dissipating member 1011, an insulating layer (passivation layer) 1013 is formed on one surface of the heat dissipating member 1011 or the coating layer 1012, An area for the element 1050 to be disposed may be formed. In detail, the insulating layer 1013 may be formed in a region where the vertical type semiconductor light emitting device 1050 is not disposed, thereby improving the brightness by inducing reflection of light generated in the vertical type semiconductor light emitting device 1050.

In addition, the insulating layer 1013 is not formed in a region where the vertical semiconductor light emitting device 1050 is disposed. After the insulating layer 1013 is selectively formed, the vertical semiconductor light emitting device 1050 is electrically connected to the heat dissipating member Or may be electrically connected to the coating layer 1012. An adhesive layer 1014 may be disposed between the vertical type semiconductor light emitting device 1050 and the heat dissipating member 1011 or the coating layer 1012 to adhere the vertical semiconductor light emitting device 1050. The adhesive layer 1014 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a paste containing conductive particles, a solution containing conductive particles, and a metal thin film layer. The description of the adhesive layer 1014 is merely exemplary and the present invention is not limited thereto.

The insulating member 1030 may be disposed on the substrate as shown in FIG. 11, and may surround the vertical semiconductor light emitting device 1050 and the protruding heat dissipating member 1011. The insulating member 1030 may include a polymer material having flexibility such as polydimethylsiloxane (PDMS) or polymethylphenylsiloxane (PMPS).

Further, the insulating member 1030 includes a light reflecting material or a wavelength converting material. The insulating member 1030 may serve as a barrier between the vertical semiconductor light emitting devices 1050 and improve light efficiency.

More specifically, the light reflecting material included in the insulating member 1030 is a filler for adjusting the refractive index. The light reflecting material may be a filler such as silicon dioxide (SiO2), titanium dioxide (TiO2), zinc oxide (ZnO2) Reflective material filler.

Meanwhile, the wavelength conversion material included in the insulating member 1030 may convert the light emitted from the vertical semiconductor light emitting device 1050 into white light or convert it into light having a specific wavelength. In an embodiment, the wavelength converting material may include at least one of a phosphor and a quantum dot.

In detail, the fluorescent material may include at least one fluorescent material selected from the group consisting of YAG, TAG, silicate, Sulfide, and Nitride. In addition, the Quantum dot may include a quantum dot of at least one of cadmium selenide (CdSe), cadmium selenide / zinc sulfide (CdSe / ZnS), cadmium telluride (CdTe), and cadmium sulfide (CdS).

The light reflecting material or the wavelength converting material included in the insulating member 1030 may affect the heat radiation performance and the flexibility according to the content ratio. Thus, in an embodiment the ratio may range from 10 to 300 wt%, based on the weight of the flexible polymeric material (PDMS or PMPS). Specifically, when the weight of the light reflection material or the wavelength conversion material is less than 10 wt% based on the weight of the flexible polymer material (PDMS or PMPS), the effect of improving the light efficiency may be weak. On the other hand, if it exceeds 300 wt% with respect to the weight of the flexible polymer material (PDMS or PMPS), the heat dissipation performance and flexibility are deteriorated.

In an embodiment, the insulating member 1030 may be formed by micro-dispensing, aerosol jet printing, molding, spin coating, and spraying.

11, the vertical semiconductor light emitting element 1050 is a blue semiconductor light emitting element that emits blue (B) light, and the phosphor layer 1080 emits blue (B) . The phosphor layer 1080 may be a red phosphor 1081 or a green phosphor 1082 constituting an individual pixel and a black matrix 191 may be disposed between the phosphor layers in order to improve contrast. .

The present invention is not necessarily limited to this, and wavelength conversion materials including the above-described phosphors or quantum dots may be combined to realize unit pixels of red (R), green (G), and blue (B).

In addition, impurities such as indium (In) and aluminum (Al) are added together with gallium nitride (GaN) as a main component, so that a band gap can be controlled. Accordingly, the light emitting device can be realized as a high output light emitting device that emits various light including blue light through the semiconductor layer whose bandgap is adjusted.

In this case, the semiconductor light emitting devices may be red, green, and blue semiconductor light emitting devices to form a unit pixel (sub-pixel), respectively. For example, red (R), green (G) and blue (B) semiconductor light emitting elements (R, G and B) are alternately arranged and red Form a single pixel, through which a full color display can be implemented.

12A to 12C are cross-sectional views illustrating a method of manufacturing the display device 1000 of the present invention.

Referring to FIG. 12A, a substrate 1010 into which a heat dissipating member 1011 is inserted is prepared. Next, a coating layer 1012 is formed on one surface of the heat dissipating member 1011.

Referring to FIG. 12B, an insulating layer (passivation layer) 1013 is formed on one surface of the coating layer 1012 to form a region to which the semiconductor light emitting device 1050 is to be attached. In detail, an insulating layer 1013 is formed in a region where the semiconductor light emitting element 1050 is not disposed. The adhesive layer 1014 may be disposed on one side of the coating layer 1012 in a region where the semiconductor light emitting device 1050 is disposed.

Referring to FIG. 12C, the semiconductor light emitting element 1050 may be bonded to one surface of the adhesive layer 1014. FIG. The method of disposing the semiconductor light emitting device 1050 on the adhesive layer 1014 may include a self-assembly for mounting the semiconductor light emitting devices on the adhesive layer 1014 in a fluid-filled chamber, a laser lifting off method (LLO) The semiconductor light emitting element 1050 can be bonded by a lift-off method (Chemicla Lift-off, CLO).

The semiconductor light emitting device 1050 may be electrically connected to the coating layer 1012 and the heat dissipating member 1011 through the adhesive layer 1014. The semiconductor light emitting device 1050 may be a vertical type semiconductor light emitting device. The heat dissipation member 1011 may be electrically connected to the first conductive type electrode 1056 of the semiconductor light emitting device 1050 to serve as a first electrode of the display device 1000.

Further, the insulating member 1030 may be formed to surround at least a part of the periphery of the semiconductor light emitting element 1050. In detail, the insulating member 1030 includes a photo-conversion material or a light reflecting material, and may be formed of a flexible polymer material (PDMS or PMPS). The insulating member 1030 may be formed by micro-dispensing, aerosol jet printing, molding, spin coating, and spraying.

In addition, the insulating member 1030 formed on one surface of the semiconductor light emitting element 1050 can be removed by dry-etching. That is, a second conductive type electrode 1052 (see FIG. 11) may be formed after a pretreatment process for forming a second conductive type electrode that can be electrically connected to the second conductive type semiconductor layer 1053 is performed. Further, red (R), green (G), and blue (B) unit pixels constitute one pixel including a phosphor or a quantum dot, thereby enabling a full color display to be realized.

On the other hand, the display device described above can be modified into various forms. These modified examples will be described below.

13 is a sectional view of display devices 1300a to 1300d for explaining another embodiment of the present invention. 13, the color of the display device may be implemented in a manner different from that of Figs. 10 to 11 described above. Red (R), green (G), blue (B), or white light may be implemented by combining a wavelength converting material and a light reflecting material, which include the phosphors or quantum dots described above in detail.

Referring to FIG. 13A, red (R), green (G), blue (B), or white light may be implemented through the insulating member 1330a and the phosphor layer 1380 in the display device 1300a . In detail, the insulating member 1330a is a flexible polymer material and may include a light reflecting material based on polydimethylsiloxane (PDMS) or polymethylphenylsiloxane (PMPS).

The filler may be a filler for adjusting the refractive index of light emitted from the semiconductor light emitting device 1350 in detail, and may be a particle type filler having a particle diameter of several nanometers. In an embodiment, a light reflecting material such as silicon dioxide (SiO2), titanium dioxide (TiO2), and zinc oxide (ZnO2) may be included to improve light efficiency.

On the other hand, the phosphor layer 1380 is disposed on one surface of the semiconductor light emitting element 1350 in which the second conductive type electrode 1352 is disposed in order to realize red (R), green (G), blue (B) Light having a desired wavelength can be realized. In an embodiment, the phosphor layer 1380 may include a wavelength conversion material based on polydimethylsiloxane (PDMS) or polymethylphenylsiloxane (PMPS) as a flexible polymer material. The wavelength converting material may include at least one of a phosphor and a quantum dot.

In detail, the fluorescent material may include at least one fluorescent material selected from the group consisting of YAG, TAG, silicate, Sulfide, and Nitride. In addition, the Quantum dot may include a quantum dot of at least one of cadmium selenide (CdSe), cadmium selenide / zinc sulphide (CdSe / ZnS), cadmium telluride (CdTe) and cadmium sulfide (CdS).

The light reflection material or the wavelength conversion material included in the insulating member 1330a or the phosphor layer 1380 may affect the heat radiation performance and the flexibility according to the content ratio. Thus, in an embodiment the ratio may range from 10 to 300 wt%, based on the weight of the flexible polymeric material (PDMS or PMPS).

Further, as shown, an adhesive layer 1331 may further be provided between the insulating member 1330a and the phosphor layer 1380. [ When the adhesiveness between the insulating member 1330a and the phosphor layer 1380 is deteriorated, the insulating member 1330a and the phosphor layer 1380 can be bonded to each other.

13 (b) to 13 (d) are modifications of the above-described FIG. 13 (a).

The display device 1300b may have an insulating member 1330b including the above-described wavelength converting material based on polydimethylsiloxane (PDMS) or polymethylphenylsiloxane (PMPS) as a flexible polymer material .

In addition, in the display devices 1300c and 1300d, the polymer material content of the insulating member 1330a and the fluorescent substance layer 1380 'is controlled, and further, the light reflecting substance 1330b included in the insulating member 1330a and the fluorescent substance layer 1380' Or the content of the wavelength conversion material can be controlled. Thus, the insulating member 1330a and the phosphor layer 1380 'may be bonded between the insulating member 1330a and the phosphor layer 1380' without arranging the adhesive layer.

14 to 15 are sectional views of a display device for explaining another embodiment of the present invention.

Referring to FIG. 14, the flip chip type semiconductor light emitting device 1450 may be formed on the display 1400 by attaching the flip chip type semiconductor light emitting device 1450 on the substrate 1410 on which the heat dissipation member 1411 is inserted. In detail, the flip chip type semiconductor light emitting device 1450 may be disposed to be electrically separated from the coating layer 1412. Thus, the coating layer can perform only the reflection function.

Further, in order to attach the flip chip type semiconductor light emitting device 1450 and the heat dissipating member 1411, an adhesive layer 1415 may be further disposed on one side of the coating layer. The adhesive layer 1415 may be a material capable of electrically separating the flip chip type semiconductor light emitting device 1450 and the heat dissipating member 1411 from each other. Further, the adhesive layer 1415 may be formed to reflect light emitted from the flip-chip type semiconductor light emitting device 1450 to improve the light efficiency of the display device 1400.

Referring to FIG. 15, the radiation member 1511 of the display device 1500 may be inserted into the substrate 1510 so as to be settled. In detail, the heat radiation member 1511 having a smaller thickness of the substrate 1510 can be inserted into the substrate 1510. [ Thus, the volume occupied by the insulating member 1530 including the light reflecting material or the wavelength converting material may be reduced, thereby decreasing the light efficiency of the display device 1500. In order to overcome this problem, a reflective layer 1516 surrounding the insulating member 1530 may be further provided to improve the light efficiency.

The above-described display device using the semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but all or a part of the embodiments may be selectively combined so that various modifications may be made to the embodiments It is possible.

Claims (10)

Board;
A plurality of semiconductor light emitting elements to be assembled to the substrate; And
And a heat dissipating member configured to emit heat of the semiconductor light emitting elements,
Wherein the heat dissipating member is inserted into the substrate, and the semiconductor light emitting device is assembled to one surface of the heat dissipating member. The method according to claim 1,
The heat dissipating member is a metal having heat conduction characteristics,
Wherein the metal having the heat conduction characteristic is selected from the group consisting of copper, aluminum, a copper alloy, and an aluminum alloy. The method according to claim 1,
Wherein the thickness of the heat radiation member is in the range of 20 to 200 占 퐉. The method according to claim 1,
Wherein the substrate is selected from the group consisting of polyimide, fluoropolymer resin, polyester, polyacrylate, polyamide, and polycarbonate. The method according to claim 1,
Wherein the thickness of the substrate is in the range of 20 to 200 占 퐉. The method according to claim 1,
And a coating layer formed between the heat dissipating member and the semiconductor light emitting device to cover at least a part of the heat dissipating member. The method according to claim 6,
Wherein the coating layer is formed to reflect light emitted from the semiconductor light emitting device,
Wherein the coating layer is selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), and aluminum (Al). The method according to claim 6,
Wherein the coating layer is formed to make an ohmic contact between the semiconductor light emitting device and the heat radiation member,
Wherein the coating layer further comprises chromium (Cr). The method according to claim 1,
And an insulating member formed to surround at least a part of the periphery of the semiconductor light emitting element. 10. The method of claim 9,
Wherein the insulating member further comprises a light reflecting material or a wavelength converting material.

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