CN111599912A - Flexible and stretchable Micro-LED bulk transfer device and method - Google Patents

Flexible and stretchable Micro-LED bulk transfer device and method Download PDF

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CN111599912A
CN111599912A CN202010485732.XA CN202010485732A CN111599912A CN 111599912 A CN111599912 A CN 111599912A CN 202010485732 A CN202010485732 A CN 202010485732A CN 111599912 A CN111599912 A CN 111599912A
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flexible
unit
wafer
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stretchable
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CN111599912B (en
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陈云
丁树权
陈新
高健
刘强
贺云波
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Maiwei Technology Zhuhai Co ltd
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Guangdong University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01—ELECTRIC ELEMENTS
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    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
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Abstract

A flexible and stretchable Micro-LED bulk transfer device comprises a transfer substrate and a receiving unit; the transfer substrate comprises a flexible unit, heat-sensitive glue, wafers and wafer bonding pads, wherein the flexible unit is provided with an electric heating unit, the heat-sensitive glue is bonded on the surface of the electric heating unit, the wafers are bonded on the surface of the heat-sensitive glue, and the wafer is attached with the wafer bonding pads; the bearing unit comprises a receiving substrate and metal bumps distributed on the receiving substrate; the metal bumps correspond to the wafer bonding pads one to one. The invention solves the problems of low mass transfer efficiency, poor controllability, complex process flow and the like of the existing Micro-LED, realizes the requirement of controllable discrete wafer spacing distance while selectively releasing in addition to ensuring the precision and yield, and further meets the requirements of low cost, easy operation, high efficiency, high flexibility, simplified process and the like.

Description

Flexible and stretchable Micro-LED bulk transfer device and method
Technical Field
The invention relates to the technical field of semiconductor photoelectricity, in particular to a flexible and stretchable Micro-LED bulk transfer device and method.
Background
After the concept of Micro-LEDs was developed by researchers from the university of texas at the beginning of this century, research institutes and manufacturers have successively intensified research into the development of this technology. Micro-LED and its derivative technology refers to that the traditional LED is miniaturized, filmed and arrayed, so that the densely arranged small size is integrated on each chip with the size of 1-10 μm, then the chip is selected in batches and transferred to a display substrate, and an electrode and a protective layer are manufactured by physical deposition and then packaged. Compared with the traditional LED and OLED display technologies, the LED and OLED display technology has the advantages of high luminous efficiency, high contrast, high color saturation, long service life and the like, and can be used for solving the market pain points of dizziness, wearing discomfort and the like generated by the original display equipment. However, in the mass production process, it faces technical obstacles such as huge (scale) shift, full color, micro-concentration technology, etc. The massive transfer is used as a key process, and is required to uniformly weld and fix thousands of RGB three-color wafer arrays on a transistor panel with the size of a centimeter square so as to realize full-color display, and equipment is required to be capable of uniformly dispersing the wafer intervals of the same transfer batch according to the display requirement of a target substrate in the transfer process and then selectively releasing the wafers. Such a large-scale fine transfer requires development of a more efficient and highly accurate process technology.
The bulk transfer method in the existing process chain mainly adopts (1) laser and ultrasonic stripping technology, and the specific process is as follows: bonding the wafers with a transfer substrate having an elastic film attached thereto, and then pointing the film to protrude by a patterned laser/ultrasonic transducer to selectively release the wafers by gravity and simultaneously to expand the spacing distance between the wafers, such as US8056222B2 and US9161448B2, however, this technique requires a high cost of the patterned laser or ultrasonic technique and laser lift-off is liable to damage the wafers. (2) The fluid self-assembly technology utilizes the intervention of fluid such as gas and liquid to enable the Micro-LED to fall into a prefabricated special structure, so that the self-assembly effect is achieved, but the accuracy is difficult to grasp due to the fact that the controllability of the fluid is not strong.
Flexible materials, such as hydrogels, can achieve superior properties of high toughness, stretchability by manipulating their components, and can offer advantages in the above-described selective release techniques and controlled uniform dispersion of wafer distances. However, in the selective release process, flexible materials have not been applied in the prior art during the process.
Disclosure of Invention
The invention aims to provide a flexible and stretchable Micro-LED bulk transfer device and method aiming at the defects in the background technology, so as to solve the problems of low efficiency, poor controllability, complex process flow and the like of the existing Micro-LED bulk transfer, realize the requirement of controllable dispersed wafer spacing distance while selectively releasing on the premise of ensuring the precision and yield, and further meet the requirements of low cost, easy operation, high efficiency, high flexibility, simplified process and the like.
In order to achieve the purpose, the invention adopts the following technical scheme:
a flexible and stretchable Micro-LED bulk transfer device comprises a transfer substrate and a receiving unit;
the transfer substrate comprises a flexible unit, heat-sensitive glue, wafers and wafer bonding pads, wherein the flexible unit is provided with an electric heating unit, the heat-sensitive glue is bonded on the surface of the electric heating unit, the wafers are bonded on the surface of the heat-sensitive glue, and the wafer is attached with the wafer bonding pads;
the bearing unit comprises a receiving substrate and metal bumps distributed on the receiving substrate;
the metal bumps correspond to the wafer bonding pads one to one.
Preferably, the flexible unit comprises an upper hydrogel layer, a lower hydrogel layer and an elastic layer laminated between the hydrogel layers in a sandwich manner;
the flexible unit is also provided with a lead of a buckling structure;
the electric heating unit is in stable contact with the hydrogel layer, and two ends of the electric heating unit are connected with the leads.
Preferably, the hydrogel layer is comprised of a physically cross-linked dissipative polymer network structure and a covalently cross-linked stretchable polymer network structure;
the stretchable polymer network structure is covalently grafted to the elastic layer.
Preferably, the physically cross-linked dissipative polymer network structure is comprised of alginate, chitosan, and hyaluronic acid;
the covalently cross-linked stretchable polymer network structure is composed of polyacrylamide, polyethylene glycol and polyvinyl alcohol;
the stretchable polymer network structure is covalently grafted to the elastic layer by benzophenone.
Preferably, the clamping device further comprises a clamping unit, wherein the clamping unit surrounds the edge arranged on the flexible unit.
Preferably, the heat-sensitive adhesive is a polyhydroxyether polymer.
Preferably, the receiving substrate is an embedded device.
A flexible and stretchable Micro-LED bulk transfer method comprises the following steps of transferring by using the flexible and stretchable Micro-LED bulk transfer device:
step A: the transfer substrate takes down the chip matrixes arranged adjacently on the Micro-LED growth wafer and transfers the chip matrixes to the upper part of the receiving substrate;
and B: stretching the flexible unit in a multi-dimensional way through the clamping unit according to the spacing of die bonding sites on the wafer matrix and the pattern of the graph to be released, so that the flexible unit is subjected to plane stretching deformation;
and C: making the transfer substrate close to the receiving substrate, making the wafer bonding pad contact with the metal salient point, and electrifying the electric heating unit according to the pattern of the graph required to be released;
step D: the electric heating unit is electrified to heat the heat sensitive glue, so that the wafer is separated from the heat sensitive glue to finish release;
step E: and repeating the steps B-D until all the wafers are released.
Preferably, the multi-dimensionally stretching the flexible unit by the clamping unit to make the flexible unit undergo planar stretching deformation includes:
one-dimensional stretching is carried out on the flexible unit along the y axis;
and (3) performing two-dimensional stretching on the flexible unit along the xy plane.
Preferably, the method comprises the steps of regulating and controlling the shear modulus of the flexible unit through a proportionality coefficient, and changing the tensile failure limit, wherein the tensile failure limit of the flexible unit before failure is 100% -500%;
the method comprises the following steps of obtaining the proportionality coefficient by using a formula I:
Figure BDA0002519114030000041
wherein, ThDenotes the layer thickness of the hydrogel layer, TeThe thickness of the elastic layer is represented, R represents a proportionality coefficient, and the value range of R is 0.5-15;
the method comprises the following steps of obtaining the shear modulus of the flexible unit by using a formula II:
Figure BDA0002519114030000042
wherein: g denotes the shear modulus of the flexible element, GhDenotes the shear modulus, G, of the hydrogel layereRepresents the shear modulus of the elastic layer;
the shear modulus of the hydrogel layer and the elastic layer is determined according to the type of hydrogel and elastomer.
Has the advantages that:
the invention solves the problems of low mass transfer efficiency, poor controllability, complex process flow and the like of the existing Micro-LED, realizes the requirement of controllable discrete wafer spacing distance while selectively releasing in addition to ensuring the precision and yield, and further meets the requirements of low cost, easy operation, high efficiency, high flexibility, simplified process and the like.
Drawings
FIG. 1 is a schematic view of a transfer substrate according to one embodiment of the present invention;
FIG. 2 is a schematic drawing of a transfer device according to one embodiment of the present invention;
FIG. 3 is a schematic illustration of a process for expanding the pitch and selectively releasing a Micro-LED wafer according to one embodiment of the present invention;
FIG. 4 is a top view of a process of expanding pitch and selectively releasing a Micro-LED wafer according to one embodiment of the present invention;
fig. 5 is a schematic diagram of two arrangements of wires in a flexible unit according to one embodiment of the present invention.
Wherein: a hydrogel layer 101; an elastic layer 102; an electric heating unit 103; an unenergized electrothermal element 103 a; an energization electric heating unit 103 b; a conductive line 104; a clamping unit 201; a die pad 202; a wafer 203; unreleased wafer 203 a; released wafer 203 b; a heat sensitive glue 204; a receiving substrate 301; a metal bump 302; a wafer 401; a die attach site 402.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
The invention relates to a flexible and stretchable Micro-LED huge transfer device which comprises a transfer substrate and a receiving unit, wherein the transfer substrate is provided with a plurality of grooves;
the transfer substrate comprises a flexible unit, a heat sensitive adhesive 204, a wafer 203 and a wafer pad 202, wherein the flexible unit is provided with an electric heating unit 103, the heat sensitive adhesive 204 is adhered to the surface of the electric heating unit 103, a plurality of wafers 203 are adhered to the surface of the heat sensitive adhesive 204, and the wafer 203 is attached with a plurality of wafer pads 202;
the receiving unit comprises a receiving substrate 301 and metal bumps 302 distributed on the receiving substrate 301;
the metal bumps 302 correspond to the die pads 202 one to one.
The plurality of wafers 203 are bonded on the lower surface of the heat sensitive adhesive 204, the transfer substrate is transferred to the upper part of the receiving substrate 301, so that the plurality of wafer pads 202 attached to the wafers 203 correspond to the metal bumps 302 on the receiving substrate 301 in a one-to-one spatial distribution manner, the electric heating units 103 are arranged on the flexible units and are heated, so that the heat sensitive adhesive 204 bonded on the surfaces of the electric heating units 103 is heated, and the wafers 203 are separated from the heat sensitive adhesive 204 under the action of gravity, so that the release is completed.
The wafer 203 has a size of 1 μm × 1 μm to 10 μm × 10 μm or more, and includes, for example, an n-doped gallium nitride layer, a multiple quantum well structure, a p-doped gallium nitride layer, and the like.
Preferably, the flexible unit comprises an upper hydrogel layer 101 and a lower hydrogel layer 101, and an elastic layer 102 laminated between the hydrogel layers 101 in a sandwich manner;
the strength and fracture toughness of the common hydrogel layer 101 are usually much lower than those of the common elastic layer 102 (the elastic layer 102 is an elastomer such as silicone rubber), and the requirement of high stretch of the present invention cannot be met, so that the middle elastic layer 102 is introduced through the sandwich lamination type design, and firstly, the shear modulus of the flexible unit can be regulated and controlled by regulating and controlling the layer thickness proportional coefficient R of the hydrogel layer 101 and the middle elastic layer 102 according to the requirement; secondly, the flexible unit has the tensile property which can not be achieved by the common hydrogel layer 101; thirdly, by utilizing the self-healing property of the hydrogel layer 101, when a tiny circuit and a device are arranged on the surface of the hydrogel layer 101, tiny defects such as cracks and the like are avoided.
The flexible unit is also provided with a lead 104 with a buckling structure;
specifically, in the present application, referring to fig. 5(a), the wires 104 are arranged on the flexible unit in an S-shape; referring to fig. 5(b), or disposed on the flexible unit in a semi-embedded manner. The preparation material can be metal, conductive polymer or other conductive substances, and the processing method can be 3D printing, physical sputtering and other methods. The S-shaped pattern can effectively reduce the resistance change of the flexible unit in the stretching process of the lead 104, improve the elastic stretching performance, and can be realized by other buckling patterns, such as zigzag, besides the S-shape.
If the conductive line 104 is designed into a regular straight line pattern, the cross-sectional area of the conductive line 104 will change with the different stretching degrees, thereby generating resistance change, reducing circuit performance, and possibly even generating circuit short circuit; the total length of the S-shaped pattern circuit is greater than that of the straight form, so that the influence of the stretching state on the cross-sectional area of the conductive line 104 is reduced as much as possible, and the resistance change during the stretching process is reduced.
Specifically, the elongation of the wire 104 is 50% to 400%.
The electric heating unit 103 is in firm contact with the hydrogel layer 101, and both ends thereof are connected to the wires 104.
Specifically, the electrothermal unit 103 operates using a current thermal effect, and the temperature rises in the energized state. The material can be platinum iridium alloy or other electrothermal alloy material, and is arranged on the flexible unit by physical sputtering and the like, and is in firm contact with the hydrogel layer 101, and two ends of the electrothermal unit 103 are connected with leads 104.
Preferably, the hydrogel layer 101 is comprised of a physically cross-linked dissipative polymer network structure and a covalently cross-linked stretchable polymer network structure;
the stretchable polymer network structure is covalently grafted to the elastic layer 102.
Preferably, the physically cross-linked dissipative polymer network structure is comprised of alginate, chitosan, and hyaluronic acid;
the covalently cross-linked stretchable polymer network structure is composed of polyacrylamide, polyethylene glycol and polyvinyl alcohol;
the stretchable polymer network structure is covalently grafted to the elastic layer 102 via benzophenone.
In particular, the hydrogel layer 101 of the flexible unit is composed of a physically cross-linked dissipative polymer network structure and a covalently cross-linked stretchable polymer network structure. The stretchable polymer network in the hydrogel layer 101 is covalently grafted to the elastomer chains, i.e. the elastic layer 102, to achieve a strong bond between the hydrogel and the elastic layer 102.
Specifically, the elastic layer 102 is made of a material including Polydimethylsiloxane (PDMS), Ecoflex, latex, or other rubber. In the hydrogel layer 101, alginate, chitosan and hyaluronic acid form a physically cross-linked network structure; polyacrylamide, polyethylene glycol and polyvinyl alcohol form a covalently cross-linked stretchable polymer network structure; benzophenone is used to activate the surface of the elastic layer 102 with the aid of a laser in the ultraviolet band to achieve covalent grafting of the stretchable network of the hydrogel to the molecular chains of the elastomer (i.e., the elastic layer 102).
Preferably, the device further comprises a clamping unit 104, wherein the clamping unit 104 surrounds the edge of the flexible unit.
Specifically, referring to fig. 2(a), the clamping unit 104 is disposed around the flexible unit, and referring to fig. 2(b), the flexible unit may be stretched in one dimension along the y-axis; referring to fig. 2(c), the flexible unit may be subjected to xy-plane two-dimensional stretching, and the clamping unit 104 is disposed on a precision manipulation arm (not shown).
Preferably, the heat-sensitive adhesive 204 is a polyhydroxyether polymer.
Specifically, the heat-sensitive adhesive 204 is a polyhydroxy ether polymer, preferred monomers of the heat-sensitive adhesive are dihydroxy dye and diglycidyl ether, and other heat-sensitive adhesives 204 and the like can be adopted, and the viscosity of the heat-sensitive adhesive can be controlled by temperature and is in a negative correlation relationship. The heat sensitive adhesive 204 is reliably arranged on the surface of the electric heating unit 103 by bonding.
Preferably, the receiving substrate 301 is an embedded device.
The receiving substrate 301 may be a MEMS, a micro sensor, a power semiconductor, a light emitting diode integrated circuit, or other embedded devices.
A flexible and stretchable Micro-LED bulk transfer method comprises the following steps of transferring by using the flexible and stretchable Micro-LED bulk transfer device:
step A: the transfer substrate takes down the matrix of adjacently arranged chips 203 on the Micro-LED growth wafer 401 and transfers it above the receiving substrate 301;
and B: stretching the flexible unit in a multi-dimensional way through the clamping unit 104 according to the spacing of the die bonding sites 402 on the matrix of the wafer 203 and the pattern of the pattern to be released, so that the flexible unit is subjected to plane stretching deformation;
and C: the transfer substrate is close to the receiving substrate 301, the wafer bonding pad 202 is contacted with the metal bump 302, and the electric heating unit 103 is electrified according to the pattern of the graph to be released;
step D: the electric heating unit 103 is electrified to heat the heat sensitive adhesive 204, so that the wafer 203 is separated from the heat sensitive adhesive 204 to complete the release;
step E: repeating steps B-D until all wafers 203 are released.
Specifically, the transfer process is: referring to fig. 3(a), the transfer substrate takes down a chip matrix (i) arranged adjacently on a Micro-LED growth wafer 401, and a plurality of chips 203 are adhered to the lower surface of a heat sensitive adhesive 204 and transferred to the upper side of a receiving substrate 301; referring to fig. 3(b), according to the spacing between die bonding sites 402 and the pattern of the pattern to be released, the flexible unit responds to the planar stretching deformation by the clamping unit 104 to controllably expand the spacing distance of the wafer 203; referring to fig. 3(c), the wafer pad 202 is brought into contact with the metal bump 302 close to the receiving substrate 301, and the electrically energized electrothermal element 103b is selectively energized, and the unenergized electrothermal element 103a is designated as 103 a; referring to fig. 3(d), since the thermal sensitive adhesive 204 is selectively heated and the viscosity is decreased, the released wafer 203b is separated from the thermal sensitive adhesive 204 under the action of gravity, after the action is completed, the transfer substrate is carried by a precision handling arm (not shown), and is away from the upper surface of the receiving substrate 301 together with the unreleased wafer 203a, the release process is completed, and the next working cycle is entered until the unreleased wafer 203a is released, and since the temperature of the thermal sensitive adhesive 204 after the power supply is stopped is spontaneously decreased, the wafer can be reused for many times until the initial temperature is completely recovered.
Specifically, referring to fig. 4(b), through the above process, alternative release patterns include (c) - (c), etc.
Specifically, the energization time of the electric heating unit 103 is 1ms to 1 s.
After the above process, the wafer 203 may be subjected to a conventional post-process. For example, the subsequent process includes: the polymer is coated and etched on the receiving substrate 301, and metal electrodes are formed on the epitaxial layer of the wafer 203 and encapsulated, which is well known in the art and will not be described in detail.
The flexible and stretchable Micro-LED huge transfer device and the transfer method can also take out the Micro-LED with circuit faults on the receiving substrate 301 to complete the circuit repairing function. The specific process is to set the heat sensitive adhesive 204 as a heat bonding adhesive, and the other components are not changed. The process is as follows: according to the pattern of the faulty wafer 203, the electric heating unit 103 corresponding to the pattern of the wafer 203 to be replaced is selectively electrified, the temperature is increased to increase the viscosity of the thermal bonding adhesive, so that the faulty wafer 203 is selectively taken out from the receiving substrate 301, and then the replacement is carried out according to the process of selectively releasing and fixing the wafer 203.
Preferably, the multi-dimensionally stretching the flexible unit by the clamping unit 104 to make the flexible unit undergo planar stretching deformation includes:
one-dimensional stretching is carried out on the flexible unit along the y axis;
and (3) performing two-dimensional stretching on the flexible unit along the xy plane.
Specifically, referring to fig. 2(a), the clamping unit 104 is disposed around the flexible unit, and referring to fig. 2(b), the flexible unit may be stretched in one dimension along the y-axis; referring to fig. 2(c), xy-plane two-dimensional stretching of the flexible unit can be performed, the clamping unit 104 is disposed on a precision manipulator (not shown), and the distance between the wafers 203 can be controllably increased by the response of the clamping unit 104 to the planar stretching deformation of the flexible unit; .
Preferably, the method comprises the steps of regulating and controlling the shear modulus of the flexible unit through a proportionality coefficient, and changing the tensile failure limit, wherein the tensile failure limit of the flexible unit before failure is 100% -500%;
the method comprises the following steps of obtaining the proportionality coefficient by using a formula I:
Figure BDA0002519114030000111
wherein, ThDenotes the layer thickness of the hydrogel layer, TeThe thickness of the elastic layer is represented, R represents a proportionality coefficient, and the value range of R is 0.5-15;
the method comprises the following steps of obtaining the shear modulus of the flexible unit by using a formula II:
Figure BDA0002519114030000112
wherein: g denotes the shear modulus of the flexible element, GhDenotes the shear modulus, G, of the hydrogel layereRepresents the shear modulus of the elastic layer;
the shear modulus of the hydrogel layer and the elastic layer is determined according to the type of hydrogel and elastomer.
The shear modulus G of the flexible unit is regulated and controlled by regulating and controlling a proportionality coefficient R, and further the tensile failure limit is regulated and controlled, wherein GeAnd GhThe shear modulus G of the whole flexible unit can be regulated and controlled by adjusting the scale factor R, and the smaller the shear modulus, the larger the tensile failure limit is.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without inventive effort, which would fall within the scope of the present invention.

Claims (10)

1. A flexible stretchable Micro-LED bulk transfer device is characterized in that: comprises a transfer substrate and a receiving unit;
the transfer substrate comprises a flexible unit, heat-sensitive glue, wafers and wafer bonding pads, wherein the flexible unit is provided with an electric heating unit, the heat-sensitive glue is bonded on the surface of the electric heating unit, the wafers are bonded on the surface of the heat-sensitive glue, and the wafer is attached with the wafer bonding pads;
the bearing unit comprises a receiving substrate and metal bumps distributed on the receiving substrate;
the metal bumps correspond to the wafer bonding pads one to one.
2. A flexible stretchable Micro-LED bulk transfer device according to claim 1, characterized in that:
the flexible unit comprises an upper hydrogel layer, a lower hydrogel layer and an elastic layer laminated between the hydrogel layers in a sandwich manner;
the flexible unit is also provided with a lead of a buckling structure;
the electric heating unit is in stable contact with the hydrogel layer, and two ends of the electric heating unit are connected with the leads.
3. A flexible stretchable Micro-LED bulk transfer device according to claim 2, characterized in that:
the hydrogel layer is comprised of a physically cross-linked dissipative polymer network structure and a covalently cross-linked stretchable polymer network structure;
the stretchable polymer network structure is covalently grafted to the elastic layer.
4. A flexible stretchable Micro-LED bulk transfer device according to claim 3, characterized in that:
the physically cross-linked dissipative polymer network is composed of alginate, chitosan, and hyaluronic acid;
the covalently cross-linked stretchable polymer network structure is composed of polyacrylamide, polyethylene glycol and polyvinyl alcohol;
the stretchable polymer network structure is covalently grafted to the elastic layer by benzophenone.
5. A flexible stretchable Micro-LED bulk transfer device according to claim 1, characterized in that:
the flexible unit is arranged on the outer side of the flexible unit, and the flexible unit is arranged on the outer side of the flexible unit.
6. A flexible stretchable Micro-LED bulk transfer device according to claim 1, characterized in that:
the heat sensitive adhesive is polyhydroxy ether polymer.
7. A flexible stretchable Micro-LED bulk transfer device according to claim 1, characterized in that:
the receiving substrate is an embedded device.
8. A flexible and stretchable Micro-LED bulk transfer method is characterized in that: comprising the use of a flexible stretchable Micro-LED bulk transfer device according to claims 1-7 for transfer by the following steps:
step A: the transfer substrate takes down the chip matrixes arranged adjacently on the Micro-LED growth wafer and transfers the chip matrixes to the upper part of the receiving substrate;
and B: stretching the flexible unit in a multi-dimensional way through the clamping unit according to the spacing of die bonding sites on the wafer matrix and the pattern of the graph to be released, so that the flexible unit is subjected to plane stretching deformation;
and C: making the transfer substrate close to the receiving substrate, making the wafer bonding pad contact with the metal salient point, and electrifying the electric heating unit according to the pattern of the graph required to be released;
step D: the electric heating unit is electrified to heat the heat sensitive glue, so that the wafer is separated from the heat sensitive glue to finish release;
step E: and repeating the steps B-D until all the wafers are released.
9. A flexible stretchable Micro-LED bulk transfer method according to claim 8, characterized in that:
the flexible unit is stretched in a multi-dimensional mode through the clamping unit, and the step of enabling the flexible unit to generate plane stretching deformation comprises the following steps:
one-dimensional stretching is carried out on the flexible unit along the y axis;
and (3) performing two-dimensional stretching on the flexible unit along the xy plane.
10. A flexible stretchable Micro-LED bulk transfer method according to claim 9, characterized in that:
the method comprises the steps of regulating and controlling the shear modulus of the flexible unit through a proportionality coefficient, and changing the tensile failure limit, wherein the tensile failure limit of the flexible unit before failure is 100-500%;
the method comprises the following steps of obtaining the proportionality coefficient by using a formula I:
Figure FDA0002519114020000031
wherein, ThDenotes the layer thickness of the hydrogel layer, TeThe thickness of the elastic layer is represented, R represents a proportionality coefficient, and the value range of R is 0.5-15;
the method comprises the following steps of obtaining the shear modulus of the flexible unit by using a formula II:
Figure FDA0002519114020000032
wherein: g denotes the shear modulus of the flexible element, GhDenotes the shear modulus, G, of the hydrogel layereRepresents the shear modulus of the elastic layer;
the shear modulus of the hydrogel layer and the elastic layer is determined according to the type of hydrogel and elastomer.
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