TWI754454B - Transfer tool and method - Google Patents

Transfer tool and method Download PDF

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Publication number
TWI754454B
TWI754454B TW109139874A TW109139874A TWI754454B TW I754454 B TWI754454 B TW I754454B TW 109139874 A TW109139874 A TW 109139874A TW 109139874 A TW109139874 A TW 109139874A TW I754454 B TWI754454 B TW I754454B
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pickup
heating
substrate
transfer tool
active
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TW109139874A
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Chinese (zh)
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TW202221820A (en
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蕭博唐
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友達光電股份有限公司
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Priority to CN202110509739.5A priority patent/CN113241315B/en
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Publication of TWI754454B publication Critical patent/TWI754454B/en
Publication of TW202221820A publication Critical patent/TW202221820A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736Loading to or unloading from a conveyor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

A transfer tool includes a substrate, an active heating element array and a pickup element. The active heating element array includes a plurality of heating units. These heating units are arranged on the substrate in a matrix manner, and each heating unit includes a driving circuit and a heating element connecting to the driving circuit. The pickup element is disposed on the active heating element array and includes a pickup surface. The pickup surface has an intrinsic pickup force and a modulation pickup force weaker than the intrinsic pickup force in response to the operation of the plurality of heating elements. A transfer method is also provided.

Description

轉移工具及轉移方法Transfer tool and transfer method

本發明是有關於一種轉移工具及轉移方法。 The present invention relates to a transfer tool and transfer method.

在製程過程中,經常需要運用轉移技術來將工件轉移至目標位置或目標基板上。例如,在發光二極體顯示裝置的製造過程中,需要自來源基板巨量轉移多個發光二極體至目標基板。在一些製程中,以聚二甲基矽氧烷(PDMS)做為轉移發光二極體的載板,利用載板與發光二極體之間的凡德瓦力將發光二極體轉移到目標基板上。然而,此方法缺乏選擇性,載板接觸到的所有發光二極體都會被轉移。當來源基板上有損壞的發光二極體或是不良的發光二極體,這些不符合規格的發光二極體也會被轉移到目標基板,造成後續需要修補或替換目標基板上的發光二極體,大幅增加製程的成本及時間。因此,亟需一種具備選擇性的轉移工具及轉移方法。 During the process, transfer technology is often required to transfer the workpiece to the target location or target substrate. For example, in the manufacturing process of the light emitting diode display device, it is necessary to transfer a large number of light emitting diodes from the source substrate to the target substrate. In some processes, polydimethylsiloxane (PDMS) is used as the carrier for transferring the light-emitting diode, and the van der Waals force between the carrier and the light-emitting diode is used to transfer the light-emitting diode to the target on the substrate. However, this method lacks selectivity, and all light-emitting diodes that come into contact with the carrier are transferred. When there are damaged LEDs or bad LEDs on the source substrate, these non-compliant LEDs will also be transferred to the target substrate, resulting in subsequent repair or replacement of the LEDs on the target substrate. body, greatly increasing the cost and time of the process. Therefore, there is an urgent need for a selective transfer tool and transfer method.

本發明提供一種轉移工具及轉移方法,具備選擇所要轉 移的工件的功能,降低製程的成本及時間。 The present invention provides a transfer tool and a transfer method, which are capable of selecting a transfer tool to be transferred. The function of moving workpieces reduces the cost and time of the process.

根據本發明一實施例,提供一種轉移工具,包括基板、主動加熱元件陣列以及拾取件。主動加熱元件陣列包括多個加熱單元,這些加熱單元以陣列形式排列於基板上,且每一加熱單元包括驅動電路以及連接驅動電路的加熱件。拾取件配置於主動加熱元件陣列上,且包括拾取面。拾取面響應於多個加熱件的操作而具備固有拾取力以及小於固有拾取力的調變拾取力。 According to an embodiment of the present invention, there is provided a transfer tool including a substrate, an array of active heating elements, and a pickup. The active heating element array includes a plurality of heating units arranged in an array on the substrate, and each heating unit includes a driving circuit and a heating element connected to the driving circuit. The pickup is disposed on the array of active heating elements and includes a pickup surface. The pickup surface has an inherent pickup force and a modulated pickup force that is less than the inherent pickup force in response to operation of the plurality of heating elements.

根據本發明另一實施例,提供一種轉移方法,包括提供轉移工具,轉移工具包括基板、主動加熱元件陣列以及拾取件。主動加熱元件陣列包括多個加熱單元,這些加熱單元以陣列形式排列於基板上,且每一加熱單元包括驅動電路以及連接驅動電路的加熱件。拾取件配置於主動加熱元件陣列上,且包括拾取面。轉移方法還包括使拾取面的至少一部分以固有拾取力拾取至少一工件,其中拾取面的至少一部分對應於至少一個加熱單元;以及使用至少一個加熱單元的驅動電路致能至少一個加熱單元的加熱件,使得拾取面接觸至少一工件的至少一部分具有小於固有拾取力的調變拾取力。 According to another embodiment of the present invention, there is provided a transfer method including providing a transfer tool, the transfer tool including a substrate, an array of active heating elements, and a pickup. The active heating element array includes a plurality of heating units arranged in an array on the substrate, and each heating unit includes a driving circuit and a heating element connected to the driving circuit. The pickup is disposed on the array of active heating elements and includes a pickup surface. The transfer method further includes causing at least a portion of the pickup surface to pick up at least one workpiece with an inherent pickup force, wherein at least a portion of the pickup surface corresponds to the at least one heating unit; and enabling a heating element of the at least one heating unit using a drive circuit of the at least one heating unit , so that at least a portion of the pick-up surface in contact with at least one workpiece has a modulated pick-up force that is less than the inherent pick-up force.

基於上述,根據本發明一實施例提供的轉移工具在主動加熱元件陣列的每個加熱單元中設置驅動電路。藉由每個驅動電路來控制拾取件的拾取面與所要拾取及釋放(轉移)的工件之間的拾取力的大小,使得轉移工具得以藉由上述的拾取力選擇是否拾取或是釋放對應的工件,達到選擇性拾取及釋放(轉移)工件 的目的。根據本發明另一實施例提供的轉移方法則利用上述的轉移工具,選擇所要拾取及釋放(轉移)的工件,以固有拾取力拾取此工件,再以調變拾取力釋放此工件,達到選擇性拾取及釋放(轉移)工件的目的。 Based on the above, the transfer tool provided according to an embodiment of the present invention is provided with a driving circuit in each heating unit of the active heating element array. The magnitude of the pick-up force between the pick-up surface of the pick-up piece and the workpiece to be picked up and released (transferred) is controlled by each drive circuit, so that the transfer tool can choose whether to pick up or release the corresponding workpiece by the above-mentioned pick-up force. , to selectively pick up and release (transfer) workpieces the goal of. According to another embodiment of the present invention, the transfer method provided by the above-mentioned transfer tool selects the workpiece to be picked up and released (transferred), picks up the workpiece with the inherent pick-up force, and then releases the workpiece with the modulated pick-up force to achieve selectivity The purpose of picking up and releasing (transferring) a workpiece.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

100、400、400’、500、600、700:轉移工具 100, 400, 400’, 500, 600, 700: Transfer tool

101:基板 101: Substrate

102、402、502、602、702、802、902:主動加熱元件陣列 102, 402, 502, 602, 702, 802, 902: Arrays of Active Heating Elements

103、403、403’、503、603、703、803、903:拾取件 103, 403, 403', 503, 603, 703, 803, 903: Pickup

102H、202H、302H、402H:加熱單元 102H, 202H, 302H, 402H: Heating unit

103S、403S、803S、903S:拾取面 103S, 403S, 803S, 903S: Pick faces

200、300:驅動電路 200, 300: drive circuit

201:第一主動元件 201: The first active element

202:第二主動元件 202: Second active element

203:電容 203: Capacitor

204、304:加熱件 204, 304: heating element

205、305:絕緣層 205, 305: insulating layer

206、306:閘絕緣層 206, 306: gate insulating layer

207:第一電源線 207: First Power Cord

208:第二電源線 208: Second power cord

2011、2021:第一電極 2011, 2021: The first electrode

2012、2022:第二電極 2012, 2022: Second Electrode

2013、2023:第三電極 2013, 2023: The third electrode

403T、503T、603T、703T:薄膜 403T, 503T, 603T, 703T: Film

403L、403L’、503L、603L、703L:隔牆層 403L, 403L’, 503L, 603L, 703L: Partition wall layer

403W:隔牆 403W: Partition Wall

403H、403H’:孔穴 403H, 403H': holes

403P、803P:凸塊 403P, 803P: bump

403S、503S、603S、703S:拾取面 403S, 503S, 603S, 703S: Pick faces

4041:保護層 4041: Protective layer

403CL、403CL’、503H、703HA、703HB 703HC:封閉腔體 403CL, 403CL', 503H, 703HA, 703HB 703HC: closed cavity

504、604、605、701A、701B、701C、801、901A、901B:工件 504, 604, 605, 701A, 701B, 701C, 801, 901A, 901B: Workpiece

800、900:部分結構 800, 900: Partial structure

704:第一基板 704: First substrate

705:第二基板 705: Second substrate

903C1、903C2:熱變質層 903C1, 903C2: Thermal metamorphic layer

903T1、903T2:熱傳導層 903T1, 903T2: heat conduction layer

903A:第一拾取單元 903A: First Pickup Unit

903B:第二拾取單元 903B: Second Pickup Unit

903E:間隔部 903E: Spacer

S901、S902、S903、S904、S905:步驟 S901, S902, S903, S904, S905: Steps

AS1、AS2:主動層 AS1, AS2: Active layer

DL:資料線 DL: data line

D1:形變量 D1: Deformation variable

H1:高度 H1: height

H2、H3:深度 H2, H3: depth

M1:金屬層 M1: Metal layer

SL:掃描線 SL: scan line

R1:半徑 R1: radius

r:方向 r: direction

T1、T2:厚度 T1, T2: Thickness

W1、W2:寬度 W1, W2: width

z:方向 z: direction

圖1A繪示了根據本發明一實施例的轉移工具的俯視圖。 1A illustrates a top view of a transfer tool according to an embodiment of the present invention.

圖1B繪示了圖1A所示的轉移工具沿線AA’的剖面圖。 FIG. 1B shows a cross-sectional view of the transfer tool shown in FIG. 1A along line AA'.

圖2A繪示了根據本發明一實施例的加熱單元的配置示意圖。 FIG. 2A is a schematic diagram illustrating a configuration of a heating unit according to an embodiment of the present invention.

圖2B繪示了圖2A所示的加熱單元的驅動電路的俯視圖。 FIG. 2B is a top view of the driving circuit of the heating unit shown in FIG. 2A .

圖2C繪示了圖2A所示的加熱單元的俯視圖。 FIG. 2C is a top view of the heating unit shown in FIG. 2A .

圖2D繪示了圖2C所示的加熱單元沿線BB’的剖面圖。 FIG. 2D is a cross-sectional view of the heating unit shown in FIG. 2C along the line BB'.

圖2E繪示了圖2C所示的加熱單元沿線CC’的剖面圖。 FIG. 2E shows a cross-sectional view of the heating unit shown in FIG. 2C along the line CC'.

圖3A繪示了根據本發明一實施例的加熱單元的俯視圖。 3A shows a top view of a heating unit according to an embodiment of the present invention.

圖3B繪示了圖3A所示的加熱單元沿線DD’的剖面圖。 FIG. 3B is a cross-sectional view of the heating unit shown in FIG. 3A along the line DD'.

圖4A繪示了根據本發明一實施例的轉移工具的剖面圖。 4A illustrates a cross-sectional view of a transfer tool according to an embodiment of the present invention.

圖4B及圖4C繪示了圖4A所示轉移工具的部分構件的俯視圖。 4B and 4C illustrate top views of some components of the transfer tool shown in FIG. 4A.

圖4D繪示了根據本發明一實施例的轉移工具的剖面圖。 4D illustrates a cross-sectional view of a transfer tool according to an embodiment of the present invention.

圖5A以側視圖繪示了轉移工具及其所拾起的工件。 Figure 5A shows the transfer tool and the workpiece it picks up in side view.

圖5B以俯視圖繪示了圖5A所示的轉移工具及工件的配置關係。 FIG. 5B is a top view showing the disposition relationship between the transfer tool and the workpiece shown in FIG. 5A .

圖6A以側視圖繪示了轉移工具及其所拾起的工件。 Figure 6A shows the transfer tool and the workpiece it picks up in side view.

圖6B以俯視圖繪示了圖6A所示的轉移工具及工件的配置關係。 FIG. 6B is a top view showing the disposition relationship between the transfer tool and the workpiece shown in FIG. 6A .

圖7A至圖7F繪示了根據本發明一實施例的轉移方法的示意圖。 7A to 7F are schematic diagrams illustrating a transfer method according to an embodiment of the present invention.

圖7G繪示了圖7F中與工件701A對應的轉移工具700的部分結構的操作示意圖。 FIG. 7G is an operational schematic diagram of the partial structure of the transfer tool 700 corresponding to the workpiece 701A in FIG. 7F .

圖8A及圖8B繪示了根據本發明一實施例的轉移方法的示意圖。 8A and 8B are schematic diagrams illustrating a transfer method according to an embodiment of the present invention.

圖9A及圖9B繪示了根據本發明一實施例的轉移方法的示意圖。 9A and 9B are schematic diagrams illustrating a transfer method according to an embodiment of the present invention.

圖9C繪示了圖9A及圖9B所示實施例的轉移方法的流程圖。 FIG. 9C shows a flowchart of the transfer method of the embodiment shown in FIGS. 9A and 9B .

參照圖1A及圖1B,圖1A繪示了根據本發明一實施例的轉移工具的俯視圖,圖1B繪示了圖1A所示的轉移工具沿線AA’的剖面圖。在圖1A及圖1B中,轉移工具100包括基板101、主動加熱元件陣列102以及拾取件103。主動加熱元件陣列102包括多個加熱單元102H,這些加熱單元102H以陣列形式排列於基板 101上,且每個加熱單元102H包括驅動電路以及連接驅動電路的加熱件(未繪示於圖1A及圖1B)。拾取件103配置於主動加熱元件陣列102上,且包括拾取面103S。如圖1B所示,拾取面103S的不同區域對應不同的加熱單元102H,使得拾取面103S的不同區域得以響應於所對應的加熱單元102H的操作而具備不同的拾取力。當拾取面103S所對應的加熱單元102H中的驅動電路未致能加熱單元102H中的加熱件,此拾取面103S具備固有拾取力。當拾取面103S所對應的加熱單元102H中的驅動電路致能加熱單元102H中的加熱件,此拾取面103S具備小於固有拾取力的調變拾取力。 1A and 1B, FIG. 1A illustrates a top view of a transfer tool according to an embodiment of the present invention, and FIG. 1B illustrates a cross-sectional view of the transfer tool shown in FIG. 1A along line AA'. In FIGS. 1A and 1B , a transfer tool 100 includes a substrate 101 , an array of active heating elements 102 , and a pickup 103 . The active heating element array 102 includes a plurality of heating units 102H arranged in an array on a substrate 101 , and each heating unit 102H includes a driving circuit and a heating element (not shown in FIG. 1A and FIG. 1B ) connected to the driving circuit. The pickup 103 is disposed on the active heating element array 102 and includes a pickup surface 103S. As shown in FIG. 1B , different regions of the pickup surface 103S correspond to different heating units 102H, so that different regions of the pickup surface 103S can have different pickup forces in response to the operations of the corresponding heating units 102H. When the driving circuit in the heating unit 102H corresponding to the pickup surface 103S does not enable the heating element in the heating unit 102H, the pickup surface 103S has an inherent pickup force. When the driving circuit in the heating unit 102H corresponding to the pickup surface 103S enables the heating element in the heating unit 102H, the pickup surface 103S has a modulated pickup force smaller than the inherent pickup force.

具體而言,根據本發明一實施例,以圖1A及圖1B所示的轉移工具100可接觸並轉移一工件(未示出)。在一些實施例中,拾取面103S可以凡德瓦力接觸要被轉移的工件。藉由上述加熱單元102H中的驅動電路以及加熱件的操作,拾取面103S接觸工件的面積可被改變,從而改變拾取面103S與工件的附著力強度。在其他實施例中,藉由上述加熱單元102H中的驅動電路以及加熱件的操作,拾取面103S接觸工件的面積可不改變但拾取面103S的黏性可被改變,從而改變拾取面103S與工件的附著力強度。如此一來,轉移工具100可調整與工件之間的附著力而達成拾取工件、釋放工件或是其他操作。 Specifically, according to an embodiment of the present invention, the transfer tool 100 shown in FIGS. 1A and 1B can contact and transfer a workpiece (not shown). In some embodiments, the pickup surface 103S may contact the workpiece to be transferred with Van der Waals forces. Through the operation of the driving circuit in the heating unit 102H and the heating element, the area of the pick-up surface 103S contacting the workpiece can be changed, thereby changing the adhesion strength between the pick-up surface 103S and the workpiece. In other embodiments, through the operation of the driving circuit and the heating element in the heating unit 102H, the area of the pick-up surface 103S contacting the workpiece may not change but the viscosity of the pick-up surface 103S may be changed, thereby changing the contact between the pick-up surface 103S and the workpiece. Adhesion strength. In this way, the transfer tool 100 can adjust the adhesion force with the workpiece to achieve picking up the workpiece, releasing the workpiece or other operations.

參照圖2A至圖2E,圖2A繪示了根據本發明一實施例的加熱單元的電路示意圖,圖2B繪示了圖2A所示的加熱單元的驅 動電路的俯視圖,圖2C繪示了圖2A所示的加熱單元的俯視圖,圖2D繪示了圖2C所示的加熱單元沿線BB’的剖面圖,圖2E繪示了圖2C所示的加熱單元沿線CC’的剖面圖。 Referring to FIGS. 2A to 2E , FIG. 2A illustrates a schematic circuit diagram of a heating unit according to an embodiment of the present invention, and FIG. 2B illustrates a drive of the heating unit shown in FIG. 2A . 2C shows a top view of the heating unit shown in FIG. 2A, FIG. 2D shows a cross-sectional view of the heating unit shown in FIG. 2C along the line BB', and FIG. 2E shows the heating unit shown in FIG. 2C. Sectional view of the unit along line CC'.

在圖2A至圖2E所示的實施例中,加熱單元202H包括驅動電路200以及加熱件204。驅動電路200包括第一主動元件201、第二主動元件202以及電容203,且第一主動元件201連接在第二主動元件202以及加熱件204之間。在本實施例中,驅動電路200為2T1C(兩個薄膜電晶體及一個電容)的結構,但是本發明不以此為限。在其他實施例中,驅動電路200可以具有不同於兩個的其他數量的電晶體,也可以具有不同於一個的其他數量的電容,驅動電路200還可以具有薄膜電晶體以及電容以外的其他元件。 In the embodiment shown in FIGS. 2A to 2E , the heating unit 202H includes a driving circuit 200 and a heating element 204 . The driving circuit 200 includes a first active element 201 , a second active element 202 and a capacitor 203 , and the first active element 201 is connected between the second active element 202 and the heating element 204 . In this embodiment, the driving circuit 200 has a 2T1C (two thin film transistors and one capacitor) structure, but the invention is not limited to this. In other embodiments, the driving circuit 200 may have other numbers of transistors other than two, and may also have other numbers of capacitors than one, and the driving circuit 200 may also have thin film transistors and other components other than capacitors.

驅動電路200更包括掃描線SL、資料線DL、第一電源線207及第二電源線208,其中第一電源線207提供電壓VDD,第二電源線208提供電壓VSS。第一主動元件201包括主動層AS1、第一電極2011、第二電極2012以及第三電極2013。閘絕緣層206設置於第一主動元件201的主動層AS1及第一電極2011之間,以絕緣兩者。第二主動元件202包括主動層AS2、第一電極2021、第二電極2022以及第三電極2023。閘絕緣層206設置於第二主動元件202的主動層AS2及第一電極2021之間,以絕緣兩者。第二主動元件202的第一電極2021電性連接掃描線SL。第二主動元件202的第二電極2022電性連接資料線DL。第二主動 元件202的第三電極2023通過金屬層M1電性連接第一主動元件201的第一電極2011。第一主動元件201的第二電極2012電性連接第一電源線207。第一主動元件201的第三電極2013連接加熱件204。絕緣層205設置於第一主動元件201及第二主動元件202與加熱件204之間。 The driving circuit 200 further includes a scan line SL, a data line DL, a first power line 207 and a second power line 208, wherein the first power line 207 provides the voltage VDD, and the second power line 208 provides the voltage VSS. The first active element 201 includes an active layer AS1 , a first electrode 2011 , a second electrode 2012 and a third electrode 2013 . The gate insulating layer 206 is disposed between the active layer AS1 of the first active element 201 and the first electrode 2011 to insulate the two. The second active element 202 includes an active layer AS2 , a first electrode 2021 , a second electrode 2022 and a third electrode 2023 . The gate insulating layer 206 is disposed between the active layer AS2 of the second active element 202 and the first electrode 2021 to insulate the two. The first electrode 2021 of the second active element 202 is electrically connected to the scan line SL. The second electrode 2022 of the second active element 202 is electrically connected to the data line DL. second initiative The third electrode 2023 of the element 202 is electrically connected to the first electrode 2011 of the first active element 201 through the metal layer M1. The second electrode 2012 of the first active element 201 is electrically connected to the first power line 207 . The third electrode 2013 of the first active element 201 is connected to the heating element 204 . The insulating layer 205 is disposed between the first active element 201 and the second active element 202 and the heating element 204 .

第二主動元件202的第一電極2021自掃描線SL接收到具有致能準位的掃描訊號後第二電極2022與第三電極2023可透過主動層AS2導通,以選擇性地將來自資料線DL的資料電壓傳送至第一主動元件201的第一電極2011。電容203為儲存電容,電容203的一端電性連接於第一主動元件201的第一電極2011以及第二電極2012之間,而另一端連接於電壓VDD以減輕第一主動元件201的第一電極2011的電壓漂移。電容203的跨壓對應第一主動元件201的導通程度,並決定流經第一主動元件201以及加熱件204的電流。加熱件204可以是加熱絲,藉由控制流經加熱件204的電流來控制其溫度。 After the first electrode 2021 of the second active element 202 receives a scan signal with an enabling level from the scan line SL, the second electrode 2022 and the third electrode 2023 can be turned on through the active layer AS2 to selectively connect the data from the data line DL. The data voltage is transmitted to the first electrode 2011 of the first active element 201 . The capacitor 203 is a storage capacitor, one end of the capacitor 203 is electrically connected between the first electrode 2011 and the second electrode 2012 of the first active element 201 , and the other end is connected to the voltage VDD to relieve the first electrode of the first active element 201 2011 voltage drift. The voltage across the capacitor 203 corresponds to the degree of conduction of the first active element 201 and determines the current flowing through the first active element 201 and the heating element 204 . The heating element 204 may be a heating wire whose temperature is controlled by controlling the current flowing through the heating element 204 .

參照圖3A及圖3B,圖3A繪示了根據本發明一實施例的加熱單元的俯視圖,圖3B繪示了圖3A所示的加熱單元沿線DD’的剖面圖。在此必須說明的是,本實施例沿用圖2A至圖2E所示實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,於本實施例不再重複贅述。 3A and 3B, FIG. 3A shows a top view of a heating unit according to an embodiment of the present invention, and FIG. 3B shows a cross-sectional view of the heating unit shown in FIG. 3A along line DD'. It must be noted here that this embodiment uses the element numbers and part of the content of the embodiment shown in FIG. 2A to FIG. 2E , wherein the same numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and details are not repeated in this embodiment.

在本實施例中,加熱單元302H包括驅動電路300以及加 熱件304。驅動電路300包括第一主動元件201、第二主動元件202以及電容203、掃描線SL、資料線DL、第一電源線207及第二電源線208,上述構件之間的連接方式可以與上述實施例中驅動電路200所包含的構件類似,在此不贅述。第一主動元件201連接在第二主動元件202以及加熱件304之間。閘絕緣層306設置於第一主動元件201的主動層AS1及第一電極2011之間,以絕緣兩者。絕緣層305設置於第一主動元件201、第二主動元件202及加熱件204上。相較於圖2C所示的加熱件204設置於驅動電路200上,圖3A所示的加熱件304與驅動電路200的第一主動元件201是同層設置的。舉例而言,加熱件304可與第二電極2012、第三電極2013、資料線DL、第二電源線208等構件為相同膜層,且加熱件304可直接連接第三電極2013,但不以此為限。 In this embodiment, the heating unit 302H includes the driving circuit 300 and the heating unit 300. Heater 304 . The driving circuit 300 includes a first active element 201 , a second active element 202 , a capacitor 203 , a scan line SL, a data line DL, a first power line 207 and a second power line 208 . The components included in the driving circuit 200 in the example are similar, and are not repeated here. The first active element 201 is connected between the second active element 202 and the heating element 304 . The gate insulating layer 306 is disposed between the active layer AS1 of the first active element 201 and the first electrode 2011 to insulate the two. The insulating layer 305 is disposed on the first active element 201 , the second active element 202 and the heating element 204 . Compared with the heating element 204 shown in FIG. 2C being disposed on the driving circuit 200 , the heating element 304 shown in FIG. 3A and the first active element 201 of the driving circuit 200 are disposed in the same layer. For example, the heating element 304 and the second electrode 2012, the third electrode 2013, the data line DL, the second power line 208 and other components can be the same film layer, and the heating element 304 can be directly connected to the third electrode 2013, but not This is limited.

根據本發明的一些實施例,加熱件204以及加熱件304皆為加熱絲,並蜿蜒地設置於平行於基板101的平面上,且加熱絲在此平面的不同位置處的粗細及分布密度可以不同。 According to some embodiments of the present invention, both the heating element 204 and the heating element 304 are heating wires, and are meanderingly arranged on a plane parallel to the substrate 101 , and the thickness and distribution density of the heating wires at different positions on the plane can be different.

參照圖4A至圖4C,圖4A繪示了根據本發明一實施例的轉移工具的剖面圖,圖4B及圖4C繪示了圖4A所示轉移工具的部分構件的俯視圖。圖4A可以視為沿圖4B的線EE’所繪示的剖面圖。轉移工具400包括基板101、主動加熱元件陣列402、拾取件403以及保護層4041,其中,保護層4041設置於主動加熱元件陣列402以及拾取件403之間。主動加熱元件陣列402包括多個加熱單元402H。在圖4C中,示意地繪示了9個加熱單元,這些 加熱單元402H以3×3陣列形式排列於基板101上,每一個加熱單元402H包括驅動電路以及連接驅動電路的加熱件。但是本發明不限於此,轉移工具400的主動加熱元件陣列402可以包括m*n個加熱單元402H,以m×n陣列形式排列於基板101上,其中m與n為正整數。 Referring to FIGS. 4A to 4C , FIG. 4A is a cross-sectional view of a transfer tool according to an embodiment of the present invention, and FIGS. 4B and 4C are top views of some components of the transfer tool shown in FIG. 4A . Fig. 4A can be viewed as a cross-sectional view along line EE' of Fig. 4B. The transfer tool 400 includes the substrate 101 , the active heating element array 402 , the pickup 403 and the protective layer 4041 , wherein the protective layer 4041 is disposed between the active heating element array 402 and the pickup 403 . Active heating element array 402 includes a plurality of heating cells 402H. In Figure 4C, 9 heating units are schematically depicted, these The heating units 402H are arranged on the substrate 101 in a 3×3 array, and each heating unit 402H includes a driving circuit and a heating element connected to the driving circuit. However, the present invention is not limited thereto, and the active heating element array 402 of the transfer tool 400 may include m*n heating units 402H arranged on the substrate 101 in an m×n array, where m and n are positive integers.

在本實施例中,每一個加熱單元402H與上述的實施例中的加熱單元202H具備相同的組成構件及配置但是本發明不限於此。在一些實施例中,每一個加熱單元402H與上述的加熱單元302H具備相同的組成構件及配置。 In this embodiment, each heating unit 402H has the same components and configurations as the heating unit 202H in the above-mentioned embodiment, but the present invention is not limited thereto. In some embodiments, each heating unit 402H has the same components and configurations as the heating unit 302H described above.

拾取件403包括薄膜403T以及隔牆層403L,其中隔牆層403L包括多個隔牆403W以及這些隔牆403W所定義的多個孔穴403H。薄膜403T密封這些孔穴403H以形成多個封閉腔體403CL。由一個孔穴403H以及薄膜403T所形成的一個封閉腔體403CL對應一個加熱單元402H,但不以此為限。 The pickup 403 includes a thin film 403T and a partition wall layer 403L, wherein the partition wall layer 403L includes a plurality of partition walls 403W and a plurality of holes 403H defined by the partition walls 403W. Thin film 403T seals these cavities 403H to form closed cavities 403CL. A closed cavity 403CL formed by a hole 403H and a thin film 403T corresponds to a heating unit 402H, but not limited thereto.

薄膜403T包括至少一凸塊403P,且凸塊403P的表面構成拾取件403的拾取面403S,如圖4A及圖4B所示。每個孔穴403H與薄膜403T所構成的每個封閉腔體403CL對應9個凸塊403P,但是本發明不以此為限。在其他實施例中,每個封閉腔體403CL可以僅對應一個凸塊403P,或是對應其他數量的凸塊403P。當每個封閉腔體403CL僅對應一個凸塊403P,這個封閉腔體403CL在基板101上的垂直投影的幾何中心可以與這個凸塊403P在基板101上的垂直投影的幾何中心對齊。當每個封閉腔體 403CL對應多個凸塊403P,這些凸塊403P在基板101上的垂直投影可以相對於所對應的這個封閉腔體403CL在基板101上的垂直投影對稱分布。薄膜403T可以是熱形變薄膜或是具有熱變質特性,根據本發明一實施例,薄膜403T的材質可以包括聚二甲基矽氧烷(PDMS)。 The thin film 403T includes at least one bump 403P, and the surface of the bump 403P constitutes a pickup surface 403S of the pickup member 403 , as shown in FIGS. 4A and 4B . Each closed cavity 403CL formed by each hole 403H and the thin film 403T corresponds to nine bumps 403P, but the invention is not limited to this. In other embodiments, each closed cavity 403CL may correspond to only one bump 403P, or correspond to other numbers of bumps 403P. When each closed cavity 403CL corresponds to only one bump 403P, the geometric center of the vertical projection of the closed cavity 403CL on the substrate 101 can be aligned with the geometric center of the vertical projection of the bump 403P on the substrate 101 . when each closed cavity 403CL corresponds to a plurality of bumps 403P, and the vertical projections of these bumps 403P on the substrate 101 may be symmetrically distributed with respect to the vertical projection of the corresponding closed cavity 403CL on the substrate 101 . The thin film 403T may be a thermally deformable thin film or a thermally deformable thin film. According to an embodiment of the present invention, the material of the thin film 403T may include polydimethylsiloxane (PDMS).

由於每一個加熱單元402H與上述的加熱單元202H具備相同的組成構件及配置,每一個加熱單元402H的驅動電路與上述實施例的驅動電路200具備相同的組成構件及配置。換言之,具備有驅動電路的每個加熱單元402H可以選擇性地將來自資料線(未標示於圖4C)的資料電壓傳送至其內部的驅動電路的第一主動元件的第一電極,使電流流經加熱件,提高加熱件的溫度。換言之,與每個加熱單元402H對應的封閉腔體403CL可以選擇性的被其下方的加熱單元402H中的加熱件加熱。由於薄膜403T可以是熱形變薄膜或是具有熱變質特性,當封閉腔體403CL被其下方的加熱件加熱,此封閉腔體403CL上的薄膜403T會因受熱而發生形變或變質。可以藉由這樣的形變或變質,以薄膜403T的表面,即拾取面403S,來轉移工件。具體而言,當薄膜403T未形變或變質,拾取面403S可以提供固有拾取力;當薄膜403T受熱形變或變質,拾取面403S可以提供小於固有拾取力的調變拾取力。可以利用固有拾取力拾起工件,並利用調變拾取力釋放工件,達成轉移此工件的目的。 Since each heating unit 402H has the same components and configurations as the above-mentioned heating unit 202H, the driving circuit of each heating unit 402H has the same components and configurations as the driving circuit 200 of the above-described embodiment. In other words, each heating unit 402H equipped with the driving circuit can selectively transmit the data voltage from the data line (not shown in FIG. 4C ) to the first electrode of the first active element of the driving circuit inside, so that the current flows After the heating element, the temperature of the heating element is increased. In other words, the closed cavity 403CL corresponding to each heating unit 402H can be selectively heated by the heating elements in the heating unit 402H below it. Since the thin film 403T can be a thermally deformable thin film or has thermal deterioration characteristics, when the closed cavity 403CL is heated by the heating element below it, the thin film 403T on the closed cavity 403CL will be deformed or deteriorated due to heating. The workpiece can be transferred by the surface of the thin film 403T, ie, the pickup surface 403S, by such deformation or deterioration. Specifically, when the film 403T is not deformed or deteriorated, the pickup surface 403S can provide an inherent pickup force; when the film 403T is thermally deformed or deteriorated, the pickup surface 403S can provide a modulated pickup force smaller than the inherent pickup force. The workpiece can be picked up by the inherent pick-up force and released by the modulated pick-up force to achieve the purpose of transferring the workpiece.

應當說明的是,每個隔牆403W在垂直基板101的法線 的方向上的寬度W2可以大於每個孔穴403H在此方向上的寬度W1,以避免每個孔穴403H所定義的封閉腔體403CL受到相鄰的加熱單元402H的影響。還應當說明的是,每個孔穴403H在基板101的法線方向上的高度H1可以大於其在垂直基板101的法線的方向上的寬度W1,使得薄膜403T響應於受熱的封閉腔體403CL所產生的形變更為明顯。也就是說,孔穴403H可具有大的深寬比。 It should be noted that each partition wall 403W is perpendicular to the normal line of the substrate 101 The width W2 of each hole 403H in the direction may be greater than the width W1 of each hole 403H in this direction, so as to avoid the closed cavity 403CL defined by each hole 403H from being affected by the adjacent heating unit 402H. It should also be noted that the height H1 of each hole 403H in the direction normal to the substrate 101 may be greater than its width W1 in the direction perpendicular to the normal to the substrate 101, so that the membrane 403T responds to the heating of the closed cavity 403CL. The resulting deformation becomes more pronounced. That is, the holes 403H may have a large aspect ratio.

參照圖4D,其繪示了根據本發明一實施例的轉移工具的剖面圖。轉移工具400’包括基板101、主動加熱元件陣列402以及拾取件403’。拾取件403’包括薄膜403T以及隔牆層403L’,其中隔牆層403L’包括多個孔穴403H’。薄膜403T密封這些孔穴403H’以形成多個封閉腔體403CL’。由一個孔穴403H’以及薄膜403T所形成的一個封閉腔體403CL’對應一個加熱單元402H,但不以此為限。 Referring to FIG. 4D, a cross-sectional view of a transfer tool according to an embodiment of the present invention is shown. The transfer tool 400' includes a substrate 101, an array of active heating elements 402, and a pick-up 403'. The pickup 403' includes a thin film 403T and a partition wall layer 403L', wherein the partition wall layer 403L' includes a plurality of holes 403H'. Thin film 403T seals these cavities 403H' to form closed cavities 403CL'. A closed cavity 403CL' formed by a hole 403H' and a thin film 403T corresponds to a heating unit 402H, but is not limited thereto.

隔牆層403L’的材質例如是有機絕緣材料,其藉由塗佈的方式形成於基板101上而具有較大的厚度。較大厚度的隔牆層403L’可通過黃光製程的方式來形成圖4D所示實施例的孔穴403H’。孔穴403H’在基板101的法線方向上的深度H3小於隔牆層403L’在基板101的法線方向上的厚度T2。不過,在其他的實施例中,孔穴403H’可選擇性的貫穿隔牆層403L’的整體厚度,使得孔穴403H’在基板101的法線方向上的深度H3等於隔牆層403L’在基板101的法線方向上的厚度T2。 The material of the partition wall layer 403L' is, for example, an organic insulating material, which is formed on the substrate 101 by coating to have a relatively large thickness. The larger thickness of the partition wall layer 403L' can be used to form the hole 403H' of the embodiment shown in FIG. 4D by a yellow light process. The depth H3 of the hole 403H' in the normal direction of the substrate 101 is smaller than the thickness T2 of the partition wall layer 403L' in the normal direction of the substrate 101. However, in other embodiments, the hole 403H' can selectively penetrate the entire thickness of the partition wall layer 403L', so that the depth H3 of the hole 403H' in the normal direction of the substrate 101 is equal to that of the partition wall layer 403L' on the substrate 101 The thickness T2 in the normal direction.

參照圖5A及圖5B,圖5A以側視圖繪示了轉移工具及其 所拾起的工件,圖5B以俯視圖繪示了圖5A所示的轉移工具及工件的配置關係。圖5A也可以視為是沿圖5B的線FF’的側視圖。轉移工具500包括基板101、主動加熱元件陣列502以及拾取件503。主動加熱元件陣列502包括多個加熱單元,且多個加熱單元以陣列形式設置於標示為502的層結構中。轉移工具500的多個加熱單元可以例如以圖2A至圖3B所示實施例中的一種加熱單元來實施。拾取件503包括薄膜503T以及隔牆層503L。薄膜503T包括多個凸塊,且這些凸塊的表面構成拾取面503S。工件504受拾取面503S提供的拾取力而被轉移工具500拾起。換言之,拾取面503S接觸工件504時,工件504可至少暫時性的附著於拾取面503S而不會任意的與拾取面503S分離,且也不永久性的貼附於拾取面503S上。在本實施例中,由隔牆層503L及薄膜503T所定義的每個封閉腔體503H可分別對應一個工件504,但不以此為限。 Referring to Figures 5A and 5B, Figure 5A illustrates the transfer tool and its For the picked up workpiece, FIG. 5B is a top view showing the disposition relationship between the transfer tool and the workpiece shown in FIG. 5A . Fig. 5A can also be viewed as a side view along line FF' of Fig. 5B. Transfer tool 500 includes substrate 101 , array 502 of active heating elements, and pick-up 503 . The active heating element array 502 includes a plurality of heating elements, and the plurality of heating elements are arranged in an array in a layer structure designated as 502 . The plurality of heating units of the transfer tool 500 may be implemented, for example, with one heating unit in the embodiment shown in FIGS. 2A-3B. The pickup 503 includes a thin film 503T and a partition wall layer 503L. The thin film 503T includes a plurality of bumps, and the surfaces of these bumps constitute the pickup surface 503S. The workpiece 504 is picked up by the transfer tool 500 by the pick-up force provided by the pick-up surface 503S. In other words, when the pick-up surface 503S contacts the workpiece 504, the workpiece 504 can be attached to the pick-up surface 503S at least temporarily without being arbitrarily separated from the pick-up surface 503S, and also not permanently attached to the pick-up surface 503S. In this embodiment, each closed cavity 503H defined by the partition wall layer 503L and the thin film 503T may correspond to one workpiece 504 respectively, but it is not limited thereto.

參照圖6A及圖6B,圖6A以側視圖繪示了轉移工具及其所拾起的工件,圖6B以俯視圖繪示了圖6A所示的轉移工具及工件的配置關係。圖6A也可以視為是沿圖6B的線GG’的側視圖。轉移工具600包括基板101、主動加熱元件陣列602以及拾取件603。主動加熱元件陣列602包括多個加熱單元,且多個加熱單元以陣列形式設置於標示為602的層結構中。轉移工具600的多個加熱單元可以例如以圖2A至圖3B所示實施例中的一種加熱單元來實施。拾取件603包括薄膜603T以及隔牆層603L。薄膜603T包括多個凸塊,且這些凸塊的表面構成拾取面603S。工件604及 605受拾取面603S提供的拾取力而被轉移工具600拾起。在本實施例中,工件604與隔牆層603L及薄膜603T所定義的4個封閉腔體603H相對應,而被轉移工具600拾起;工件605與隔牆層603L及薄膜603T所定義的1個封閉腔體603H相對應,而被轉移工具600拾起。總的來說,單一個工件可以藉由一個封閉腔體603H或多個封閉腔體603H所對應的拾取面603S來拾起。 6A and 6B, FIG. 6A shows a side view of the transfer tool and the workpiece it picks up, and FIG. 6B shows the configuration relationship between the transfer tool and the workpiece shown in FIG. 6A from a top view. Figure 6A can also be viewed as a side view along line GG' of Figure 6B. Transfer tool 600 includes substrate 101 , array 602 of active heating elements, and pick-up 603 . Active heating element array 602 includes a plurality of heating elements arranged in an array in a layer structure designated 602 . The plurality of heating units of the transfer tool 600 may be implemented, for example, with one heating unit in the embodiment shown in FIGS. 2A-3B. The pickup 603 includes a thin film 603T and a partition wall layer 603L. The thin film 603T includes a plurality of bumps, and the surfaces of these bumps constitute the pickup surface 603S. Workpiece 604 and 605 is picked up by the transfer tool 600 due to the pick-up force provided by the pick-up surface 603S. In this embodiment, the workpiece 604 corresponds to the four closed cavities 603H defined by the partition layer 603L and the film 603T, and is picked up by the transfer tool 600; the workpiece 605 corresponds to the 1 defined by the partition layer 603L and the film 603T. The corresponding closed cavities 603H are picked up by the transfer tool 600 . In general, a single workpiece can be picked up by the pick-up surface 603S corresponding to one closed cavity 603H or multiple closed cavities 603H.

在本實施例中,每個封閉腔體603H對應4個凸塊。但是本發明不以此為限。在其他實施例中,每個腔體可以僅對應一個凸塊,或多個凸塊,且不以4個凸塊為限。 In this embodiment, each closed cavity 603H corresponds to four bumps. However, the present invention is not limited to this. In other embodiments, each cavity may correspond to only one bump, or multiple bumps, and is not limited to four bumps.

參照圖7A至圖7F,圖7A至圖7F繪示了根據本發明一實施例的轉移方法的示意圖。先參照圖7A,在本實施例中,轉移方法包括提供轉移工具700,轉移工具700包括基板101、主動加熱元件陣列702以及拾取件703。主動加熱元件陣列702包括多個加熱單元,且多個加熱單元以陣列形式設置於標示為702的層結構中。轉移工具700的多個加熱單元可以例如以圖2A至圖3B所示實施例中的一種加熱單元來實施。拾取件703包括薄膜703T以及隔牆層703L。薄膜703T包括多個凸塊,且這些凸塊的表面構成拾取面703S。薄膜703T以及隔牆層703L構成多個封閉腔體703HA、703HB以及703HC。 Referring to FIGS. 7A to 7F , FIGS. 7A to 7F are schematic diagrams illustrating a transfer method according to an embodiment of the present invention. Referring first to FIG. 7A , in this embodiment, the transfer method includes providing a transfer tool 700 , and the transfer tool 700 includes a substrate 101 , an array of active heating elements 702 , and a pickup 703 . Active heating element array 702 includes a plurality of heating cells arranged in an array in a layered structure designated 702 . The plurality of heating units of the transfer tool 700 may be implemented, for example, as one heating unit in the embodiment shown in FIGS. 2A-3B. The pickup 703 includes a thin film 703T and a partition wall layer 703L. The thin film 703T includes a plurality of bumps, and the surfaces of these bumps constitute the pickup surface 703S. The thin film 703T and the partition wall layer 703L constitute a plurality of closed cavities 703HA, 703HB and 703HC.

根據本實施例的轉移方法還包括使拾取面703S的至少一部分以固有拾取力拾取至少一工件,以及使用至少一個加熱單元的驅動電路致能至少一個加熱單元的加熱件,使得拾取面703S接 觸至少一工件的至少一部分具有小於固有拾取力的調變拾取力。具體而言,參照圖7A至圖7C,圖7A至圖7C繪示了以轉移工具700選擇性地拾起第一基板704上的多個工件701A、701B或701C的過程。在本實施例中,所欲拾起的工件為工件701A及701C,並且,不拾起工件701B。具體的作法是,將轉移工具700靠近工件701A、701B及701C(如圖7A至圖7B所示的過程),利用設置於主動加熱元件陣列702中的至少一個加熱單元加熱與工件701B對應的封閉腔體703HB,使得封閉腔體703HB內部的空氣因溫度的上升而膨脹(如圖7B至圖7C所示的過程),造成薄膜703T中對應的部份(在圖7C中,薄膜703T的中間段)發生形變。由於上述的形變,相較於與工件701A或701C接觸的拾取面703S,與工件701B接觸的拾取面703S的面積較小,使得此部分的拾取面703S與工件701B之間的拾取力(調變拾取力)較小,因此工件701B無法如同工件701A和701C被轉移工具700拾起。相對的,由於拾取面703S與工件701A或701C之間的接觸面積較大,且拾取力(固有拾取力)較大,工件701A和701C可以被轉移工具700拾起。 The transfer method according to the present embodiment further includes causing at least a portion of the pickup surface 703S to pick up at least one workpiece with an inherent pickup force, and enabling the heating element of the at least one heating unit using a drive circuit of the at least one heating unit, so that the pickup surface 703S contacts the At least a portion of the at least one workpiece contacting has a modulated pick-up force that is less than the inherent pick-up force. Specifically, referring to FIGS. 7A-7C , FIGS. 7A-7C illustrate a process of selectively picking up a plurality of workpieces 701A, 701B or 701C on the first substrate 704 with the transfer tool 700 . In this embodiment, the workpieces to be picked up are the workpieces 701A and 701C, and the workpiece 701B is not picked up. Specifically, the transfer tool 700 is brought close to the workpieces 701A, 701B and 701C (the process shown in FIGS. 7A-7B ), and at least one heating unit disposed in the active heating element array 702 is used to heat the enclosure corresponding to the workpiece 701B The cavity 703HB causes the air inside the closed cavity 703HB to expand due to the rise in temperature (the process shown in FIG. 7B to FIG. 7C ), causing the corresponding part of the film 703T (in FIG. 7C , the middle section of the film 703T ) deformed. Due to the above deformation, the area of the pickup surface 703S in contact with the workpiece 701B is smaller than that of the pickup surface 703S in contact with the workpiece 701A or 701C, so that the pickup force (modulation) between the pickup surface 703S of this part and the workpiece 701B is smaller. Pickup force) is smaller, so workpiece 701B cannot be picked up by transfer tool 700 like workpieces 701A and 701C. In contrast, since the contact area between the pickup surface 703S and the workpiece 701A or 701C is larger, and the pickup force (intrinsic pickup force) is larger, the workpieces 701A and 701C can be picked up by the transfer tool 700 .

根據本實施例的轉移方法還包括使用拾取面703S以小於固有拾取力的調變拾取力將至少一工件釋放於一第二基板。具體而言,參照圖7D至圖7F,被轉移工具700拾起的工件701A及701C藉由圖7D至圖7F所示的過程釋放於第二基板705。具體的做法是,將轉移工具700及工件701A及701C貼近第二基板705 (如圖7D至圖7E所示的過程),利用設置於主動加熱元件陣列702中的多個加熱單元加熱封閉腔體703HA及703HC,使得這兩個封閉腔體內部的空氣因溫度的上升而膨脹,造成薄膜703T中對應的部份發生形變,使得工件701A及701C與薄膜703T之間的拾取力由固有拾取力變成一較小的拾取力(調變拾取力),當轉移工具700朝遠離第二基板705的方向移動,工件701A和701C得以被釋放在第二基板705上(如圖7E至圖7F所示的過程)。應當說明的是,上述的不拾取工件701B的調變拾取力以及釋放工件701A和701C的調變拾取力皆小於固有拾取力,但兩調變拾取力的大小可以彼此不同。不過,在一些實施例中,不拾取工件701B的調變拾取力以及釋放工件701A和701C的調變拾取力可大致相同。舉例而言,調變拾取力的大小可以由加熱單元對封閉腔體的加熱程度來調整與改變。 The transfer method according to the present embodiment further includes using the pickup surface 703S to release at least one workpiece to a second substrate with a modulated pickup force that is less than the inherent pickup force. Specifically, referring to FIGS. 7D to 7F , the workpieces 701A and 701C picked up by the transfer tool 700 are released to the second substrate 705 through the process shown in FIGS. 7D to 7F . Specifically, the transfer tool 700 and the workpieces 701A and 701C are brought close to the second substrate 705 (The process shown in FIG. 7D to FIG. 7E ), the closed cavities 703HA and 703HC are heated by a plurality of heating units arranged in the active heating element array 702, so that the air inside the two closed cavities is heated due to the increase in temperature. The expansion causes the corresponding part of the film 703T to deform, so that the pickup force between the workpieces 701A and 701C and the film 703T changes from the inherent pickup force to a smaller pickup force (modulates the pickup force). When the transfer tool 700 moves away from The direction of the second substrate 705 is moved, and the workpieces 701A and 701C are released on the second substrate 705 (the process shown in FIGS. 7E to 7F ). It should be noted that the above-mentioned modulated pickup force for not picking up the workpiece 701B and the modulated pickup force for releasing the workpieces 701A and 701C are both smaller than the inherent pickup force, but the magnitudes of the two modulated pickup forces may be different from each other. However, in some embodiments, the modulated pickup force for not picking workpiece 701B and the modulated pickup force for releasing workpieces 701A and 701C may be approximately the same. For example, the magnitude of the modulating pickup force can be adjusted and changed by the heating degree of the heating unit to the closed cavity.

應當說明的是,如前所述,轉移工具700中的多個加熱單元可以例如以圖2A至圖3B所示實施例中的一種加熱單元來實施,且圖2A至圖3B所示實施例中的每個加熱單元可以藉由其內部的2T1C結構中的第二主動元件202控制第一主動元件201的開啟及關閉,進而決定此加熱單元的加熱件是否加熱對應的封閉腔體703HA、703HB及703HC,達到選擇性地拾起和釋放工件701A、701B或701C的目的。 It should be noted that, as previously described, the plurality of heating units in the transfer tool 700 may be implemented, for example, as one heating unit in the embodiment shown in FIGS. 2A-3B , and in the embodiment shown in FIGS. 2A-3B Each heating unit can control the opening and closing of the first active element 201 by the second active element 202 in its internal 2T1C structure, thereby determining whether the heating element of the heating unit heats the corresponding closed cavity 703HA, 703HB and 703HC, for the purpose of selectively picking up and releasing workpieces 701A, 701B or 701C.

參照圖7G,其繪示圖7F中與工件701A對應的轉移工具700的部分結構的操作示意圖。具體而言,圖7G係繪示以說明使 工件701A自轉移工具700釋放至第二基板705的條件。在圖7G中,薄膜703T具備厚度T1,封閉腔體703HA在垂直於基板的法線的方向(r方向)上具備半徑R1,在平行於基板的法線的方向(z方向)上具備深度H2。當圖7G所示的封閉腔體703HA受到對應的加熱單元加熱,使得薄膜703T發生形變時,薄膜703T在z方向的形變量為D1。若薄膜703T的形變量D1及封閉腔體703HA的半徑R1符合條件式D1/R1>20%,則工件701A可以脫離薄膜703T。根據本發明一實施例,若薄膜703T的厚度T1為20微米,封閉腔體703HA的深度H2為100微米,且封閉腔體703HA的半徑R1為50微米時,薄膜703T在z方向的形變量D1大於10微米時,可以使工件701A脫離薄膜703T。 Referring to FIG. 7G , it is an operational schematic diagram of the partial structure of the transfer tool 700 corresponding to the workpiece 701A in FIG. 7F . Specifically, FIG. 7G is shown to illustrate the use of Conditions under which workpiece 701A is released from transfer tool 700 to second substrate 705 . In FIG. 7G, the thin film 703T has a thickness T1, the closed cavity 703HA has a radius R1 in the direction perpendicular to the substrate normal (r direction), and has a depth H2 in the direction parallel to the substrate normal (z direction) . When the closed cavity 703HA shown in FIG. 7G is heated by the corresponding heating unit, so that the thin film 703T is deformed, the deformation amount of the thin film 703T in the z direction is D1. If the deformation amount D1 of the film 703T and the radius R1 of the closed cavity 703HA satisfy the conditional formula D1/R1>20%, the workpiece 701A can be separated from the film 703T. According to an embodiment of the present invention, if the thickness T1 of the film 703T is 20 μm, the depth H2 of the closed cavity 703HA is 100 μm, and the radius R1 of the closed cavity 703HA is 50 μm, the deformation amount D1 of the film 703T in the z direction When larger than 10 microns, the workpiece 701A can be released from the film 703T.

參照圖8A及圖8B,圖8A及圖8B繪示了根據本發明一實施例的轉移方法的示意圖。在本實施例中,轉移方法包括提供轉移工具。在圖8A及圖8B中,僅示出此轉移工具的部分結構800,其包括基板101、主動加熱元件陣列802以及拾取件803。主動加熱元件陣列802中設置了至少一個加熱單元。此至少一個加熱單元可以例如以圖2A至圖3B所示實施例中的一種加熱單元來實施。拾取件803是熱形變薄膜,並且具備多個凸塊803P,且這些凸塊803P的表面構成拾取面803S。根據本發明一實施例,拾取件803的材質包括聚二甲基矽氧烷(PDMS),其熱膨脹係數約為310×10-6/℃。 Referring to FIGS. 8A and 8B , FIGS. 8A and 8B are schematic diagrams illustrating a transfer method according to an embodiment of the present invention. In this embodiment, the transfer method includes providing a transfer tool. In FIGS. 8A and 8B , only part of the structure 800 of the transfer tool is shown, which includes the substrate 101 , the active heating element array 802 , and the pick-up 803 . At least one heating element is provided in the active heating element array 802 . This at least one heating unit may be implemented, for example, as one of the heating units in the embodiment shown in Figures 2A-3B. The pickup 803 is a thermally deformable film, and includes a plurality of bumps 803P, and the surfaces of these bumps 803P constitute a pickup surface 803S. According to an embodiment of the present invention, the material of the pick-up member 803 includes polydimethylsiloxane (PDMS), and its thermal expansion coefficient is about 310×10 −6 /°C.

在本實施例中,以拾取面803S與工件801之間的拾取力 拾起工件801,再利用主動加熱元件陣列802中設置的至少一個加熱單元的驅動電路致能此加熱單元的加熱件,使做為熱形變薄膜的拾取件803發生形變,以釋放工件801,達成拾取及釋放工件801的目的。加熱單元的加熱件可以集中設置於部分結構800在基板101的法線方向上的對稱軸心附近,使得當拾取件803熱膨脹時,其中央部分的隆起幅度更加明顯。 In this embodiment, the pick-up force between the pick-up surface 803S and the workpiece 801 is Pick up the workpiece 801, and then use the drive circuit of at least one heating unit set in the active heating element array 802 to enable the heating element of the heating unit, so that the pickup element 803, which is a thermal deformation film, is deformed to release the workpiece 801, so as to achieve The purpose of picking up and releasing workpieces 801 . The heating elements of the heating unit can be centrally disposed near the symmetry axis of the partial structure 800 in the normal direction of the substrate 101 , so that when the pickup element 803 is thermally expanded, the bulging amplitude of the central portion thereof is more obvious.

具體而言,本實施例的轉移工具係由多個部分結構800以陣列形式排列所構成,運用本實施例的轉移工具同樣可以達成如圖7A至圖7F所示的多個工件的轉移的目的。 Specifically, the transfer tool of this embodiment is composed of a plurality of partial structures 800 arranged in an array, and the transfer tool of this embodiment can also achieve the purpose of transferring multiple workpieces as shown in FIGS. 7A to 7F . .

參照圖9A及圖9B,圖9A及圖9B繪示了根據本發明一實施例的轉移方法的示意圖。在本實施例中,轉移方法包括提供轉移工具。在圖9A及圖9B中,僅示出此轉移工具的部分結構900,其包括基板101、主動加熱元件陣列902以及拾取件903。拾取件903包括第一拾取單元903A、第二拾取單元903B以及第一拾取單元903A和第二拾取單元903B之間的間隔部903E。主動加熱元件陣列902中設置了至少兩個加熱單元(未標示),用以分別加熱第一拾取單元903A及第二拾取單元903B。每個加熱單元可以例如以圖2A至圖3B所示實施例中的一種加熱單元來實施。第一拾取單元903A包括了熱傳導層903T1以及熱變質層903C1,第二拾取單元903B包括了熱傳導層903T2以及熱變質層903C2,且熱變質層903C1及903C2的表面構成拾取件903的拾取面903S。熱傳導層903T1及903T2為導熱良好且耐溫的材質,且可 以是藉由黃光或蝕刻等製程形成的圖案化結構。透過在熱傳導層903T1及903T2的凸塊上分別塗佈熱變質層903C1及903C2來形成第一拾取單元903A和第二拾取單元903B。在一些實施例中,第一拾取單元903A和第二拾取單元903B之間的間隔部903E可具有較薄的厚度,以降低第一拾取單元903A和第二拾取單元903B之間的熱傳導。在一些實施例中,第一拾取單元903A和第二拾取單元903B之間的間隔部903E可完全被移除。 Referring to FIGS. 9A and 9B , FIGS. 9A and 9B are schematic diagrams illustrating a transfer method according to an embodiment of the present invention. In this embodiment, the transfer method includes providing a transfer tool. In FIGS. 9A and 9B , only part of the structure 900 of the transfer tool is shown, which includes the substrate 101 , the array 902 of active heating elements, and the pick-up 903 . The pickup 903 includes a first pickup unit 903A, a second pickup unit 903B, and a spacer 903E between the first pickup unit 903A and the second pickup unit 903B. At least two heating units (not shown) are disposed in the active heating element array 902 for heating the first pickup unit 903A and the second pickup unit 903B respectively. Each heating unit may be implemented, for example, as one of the heating units in the embodiments shown in Figures 2A-3B. The first pickup unit 903A includes a thermally conductive layer 903T1 and a thermally altered layer 903C1 , the second pickup unit 903B includes a thermally conductive layer 903T2 and a thermally altered layer 903C2 , and the surfaces of the thermally altered layers 903C1 and 903C2 form a pickup surface 903S of the pickup 903 . The thermal conduction layers 903T1 and 903T2 are materials with good thermal conductivity and temperature resistance, and can be Therefore, it is a patterned structure formed by processes such as yellow light or etching. The first pickup unit 903A and the second pickup unit 903B are formed by coating the thermally modified layers 903C1 and 903C2 on the bumps of the thermally conductive layers 903T1 and 903T2, respectively. In some embodiments, the spacer 903E between the first pickup unit 903A and the second pickup unit 903B may have a thinner thickness to reduce heat conduction between the first pickup unit 903A and the second pickup unit 903B. In some embodiments, the spacer 903E between the first pickup unit 903A and the second pickup unit 903B may be completely removed.

參照圖9C,其繪示圖9A及圖9B所示實施例的轉移方法的流程圖。在本實施例中,以拾取面903S與工件901A及901B之間的拾取力拾起工件901A及901B(步驟S901),再利用主動加熱元件陣列902中設置的至少兩個加熱單元的驅動電路致能此至少兩個加熱單元的加熱件,透過熱傳導層903T1及903T2將熱能傳導至熱變質層903C1及903C2,使熱變質層903C1及903C2受熱變質或分解,因而降低熱變質層903C1及903C2與工件901A及901B之間的拾取力(步驟S902),以釋放工件901A及901B(步驟S903),達成拾取及釋放(轉移)工件901A及901B的目的(步驟S904)。在本實施例中,在工件901A及901B因熱變質層903C1及903C2受熱變質或分解而被釋放後,還可以重新塗佈熱變質層903C1及903C2(步驟S905),重複上述拾取及釋放(轉移)其他工件的過程。 Referring to FIG. 9C , a flowchart of the transfer method of the embodiment shown in FIGS. 9A and 9B is shown. In this embodiment, the workpieces 901A and 901B are picked up by the pick-up force between the pick-up surface 903S and the workpieces 901A and 901B (step S901 ), and then the drive circuits of at least two heating units provided in the active heating element array 902 are used to The heating elements of the at least two heating units can conduct thermal energy to the thermally metamorphic layers 903C1 and 903C2 through the thermally conductive layers 903T1 and 903T2, so that the thermally metamorphic layers 903C1 and 903C2 are decomposed or decomposed by heat, thereby reducing the thermally metamorphic layers 903C1 and 903C2 and the workpiece. The pickup force between 901A and 901B (step S902 ) is used to release the workpieces 901A and 901B (step S903 ) to achieve the purpose of picking up and releasing (transferring) the workpieces 901A and 901B (step S904 ). In this embodiment, after the workpieces 901A and 901B are released due to thermal deterioration or decomposition of the thermally degraded layers 903C1 and 903C2 , the thermally degraded layers 903C1 and 903C2 may be re-coated (step S905 ), and the above pickup and release (transfer) can be repeated. ) other artifacts.

具體而言,本實施例的轉移工具係由以陣列結構排列的多個部分結構900所構成,運用本實施例的轉移工具同樣可以達 成如圖7A至圖7F所示的多個工件的轉移的目的。 Specifically, the transfer tool of this embodiment is composed of a plurality of partial structures 900 arranged in an array structure, and the transfer tool of this embodiment can also achieve For the purpose of transferring a plurality of workpieces as shown in Figures 7A-7F.

綜上所述,根據本發明一實施例提供的轉移工具在主動加熱元件陣列的每個加熱單元中具備驅動電路。藉由每個驅動電路來控制拾取件的拾取面與所要拾取及釋放(轉移)的工件之間的拾取力的大小,使得轉移工具得以藉由上述的拾取力選擇是否拾取或是釋放對應的工件,達到選擇性拾取及釋放(轉移)工件的目的。根據本發明另一實施例提供的轉移方法則利用上述的轉移工具,選擇所要拾取及釋放(轉移)的工件,以固有拾取力拾取此工件,再以調變拾取力釋放此工件,達到選擇性拾取及釋放(轉移)工件的目的。 To sum up, the transfer tool provided according to an embodiment of the present invention is provided with a driving circuit in each heating unit of the active heating element array. The magnitude of the pick-up force between the pick-up surface of the pick-up piece and the workpiece to be picked up and released (transferred) is controlled by each drive circuit, so that the transfer tool can choose whether to pick up or release the corresponding workpiece by the above-mentioned pick-up force. , to achieve the purpose of selectively picking up and releasing (transferring) workpieces. According to another embodiment of the present invention, the transfer method provided by the above-mentioned transfer tool selects the workpiece to be picked up and released (transferred), picks up the workpiece with the inherent pick-up force, and then releases the workpiece with the modulated pick-up force to achieve selectivity The purpose of picking up and releasing (transferring) a workpiece.

400:轉移工具 400: Transfer Tool

101:基板 101: Substrate

402:主動加熱元件陣列 402: Active Heating Element Array

403:拾取件 403: Pickup

402H:加熱單元 402H: Heating unit

403T:薄膜 403T: Film

403L:隔牆層 403L: Partition wall layer

403CL:封閉腔體 403CL: closed cavity

403W:隔牆 403W: Partition Wall

403H:孔穴 403H: Hole

403P:凸塊 403P: bump

403S:拾取面 403S: Pick Face

4041:保護層 4041: Protective layer

H1:高度 H1: height

W1、W2:寬度 W1, W2: width

Claims (18)

一種轉移工具,包括:一基板;一主動加熱元件陣列,包括多個加熱單元,該些加熱單元以陣列形式排列於該基板上,且每一加熱單元包括一驅動電路以及連接該驅動電路的一加熱件;以及一拾取件,配置於該主動加熱元件陣列上,且包括一拾取面、一薄膜以及一隔牆層,其中該薄膜構成該拾取面,該隔牆層配置於該基板上且具有多個孔穴,該薄膜密封該些孔穴以形成多個封閉腔體,其中該拾取面響應於至少一該加熱件的操作而具備一固有拾取力以及小於該固有拾取力的一調變拾取力。 A transfer tool, comprising: a substrate; an active heating element array, including a plurality of heating units, the heating units are arranged on the substrate in an array form, and each heating unit includes a driving circuit and a driving circuit connected to the driving circuit. A heating element; and a pick-up element, disposed on the active heating element array, and comprising a pick-up surface, a thin film and a partition wall layer, wherein the thin film constitutes the pick-up surface, the partition wall layer is disposed on the substrate and has A plurality of holes, the film seals the holes to form a plurality of closed cavities, wherein the pickup surface has an inherent pickup force and a modulated pickup force smaller than the inherent pickup force in response to the operation of at least one of the heating elements. 如請求項1所述的轉移工具,其中每一孔穴在該基板的法線方向上的深度小於該隔牆層在該基板的法線方向上的厚度。 The transfer tool of claim 1, wherein the depth of each hole in the normal direction of the substrate is less than the thickness of the partition wall layer in the normal direction of the substrate. 如請求項1所述的轉移工具,其中每一孔穴在該基板的法線方向上的高度大於其在垂直該基板的法線的一方向上的寬度。 The transfer tool of claim 1, wherein the height of each cavity in a direction normal to the substrate is greater than its width in a direction perpendicular to the normal to the substrate. 如請求項1所述的轉移工具,其中該隔牆層具有多個隔牆,該些隔牆定義該些孔穴,且每一隔牆在垂直該基板的法線的一方向上的厚度,大於每一孔穴在該方向上的寬度。 The transfer tool of claim 1, wherein the partition wall layer has a plurality of partition walls, the partition walls define the holes, and the thickness of each partition wall in a direction perpendicular to the normal of the substrate is greater than that of each partition wall The width of a hole in this direction. 如請求項1所述的轉移工具,其中該薄膜包括至少一凸塊,且該至少一凸塊的一表面構成該拾取面。 The transfer tool of claim 1, wherein the film includes at least one bump, and a surface of the at least one bump constitutes the pickup surface. 如請求項1所述的轉移工具,其中該薄膜為一熱形變薄膜。 The transfer tool of claim 1, wherein the film is a thermally deformable film. 如請求項1所述的轉移工具,其中該薄膜的材質包括聚二甲基矽氧烷(PDMS)。 The transfer tool of claim 1, wherein the material of the film comprises polydimethylsiloxane (PDMS). 如請求項1所述的轉移工具,其中該拾取件更包括配置於該基板上的一熱傳導層,該熱傳導層具有多個孔穴,每一孔穴在該基板的法線方向上的深度小於該熱傳導層在該基板的法線方向上的厚度。 The transfer tool of claim 1, wherein the pick-up member further comprises a heat conduction layer disposed on the substrate, the heat conduction layer has a plurality of holes, and the depth of each hole in the normal direction of the substrate is smaller than the heat conduction layer The thickness of the layer in the direction normal to the substrate. 如請求項1所述的轉移工具,其中該拾取件包括一熱變質層,且該熱變質層構成該拾取面。 The transfer tool of claim 1, wherein the pickup includes a thermally degraded layer, and the thermally degraded layer constitutes the pickup surface. 如請求項1所述的轉移工具,其中該驅動電路包括一第一主動元件、一第二主動元件以及一電容,且該第一主動元件連接在該第二主動元件以及該加熱件之間。 The transfer tool of claim 1, wherein the driving circuit comprises a first active element, a second active element and a capacitor, and the first active element is connected between the second active element and the heating element. 如請求項10所述的轉移工具,其中該加熱件與該第一主動元件同層設置。 The transfer tool of claim 10, wherein the heating element and the first active element are disposed on the same layer. 如請求項1所述的轉移工具,其中該加熱件為一加熱絲,該加熱絲蜿蜒地設置於平行於該基板的一平面上,且該加熱絲在該平面的不同位置處的粗細及分布密度不同。 The transfer tool according to claim 1, wherein the heating element is a heating wire, the heating wire is meanderingly arranged on a plane parallel to the substrate, and the thicknesses of the heating wire at different positions on the plane and The distribution density is different. 如請求項1所述的轉移工具,更包括一絕緣層,設置於該驅動電路以及該加熱件之間。 The transfer tool according to claim 1, further comprising an insulating layer disposed between the driving circuit and the heating element. 如請求項1所述的轉移工具,更包括一保護層,設置於該主動加熱元件陣列以及該拾取件之間。 The transfer tool according to claim 1, further comprising a protective layer disposed between the active heating element array and the pick-up member. 一種轉移方法,包括:提供一轉移工具,該轉移工具包括:一基板;一主動加熱元件陣列,包括多個加熱單元,該些加熱單元以陣列形式排列於該基板上,且每一加熱單元包括一驅動電路以及連接該驅動電路的一加熱件;以及一拾取件,配置於該主動加熱元件陣列上,且包括一拾取面、一薄膜以及一隔牆層,其中該薄膜構成該拾取面,該隔牆層配置於該基板上且具有多個孔穴,該薄膜密封該些孔穴以形成多個封閉腔體,該拾取面具有一固有拾取力;以及使用至少一個加熱單元的該驅動電路致能該至少一個加熱單元的該加熱件,使得該拾取面的至少一部分具有的該固有拾取力調變成小於該固有拾取力的一調變拾取力。 A transfer method, comprising: providing a transfer tool, the transfer tool comprising: a substrate; an array of active heating elements, including a plurality of heating units, the heating units are arranged in an array on the substrate, and each heating unit includes a driving circuit and a heating element connected to the driving circuit; and a pick-up element disposed on the active heating element array and comprising a pick-up surface, a thin film and a partition wall layer, wherein the thin film constitutes the pick-up surface, the The partition layer is disposed on the substrate and has a plurality of holes, the film seals the holes to form a plurality of closed cavities, the pickup surface has an inherent pickup force; and the driving circuit of at least one heating unit is used to enable the The heating element of at least one heating unit makes the inherent pickup force of at least a part of the pickup surface adjusted to a modulated pickup force smaller than the inherent pickup force. 如請求項15所述的轉移方法,更包括:使該拾取面的該至少一部分以該固有拾取力自一第一基板拾起至少一工件;以及使該拾取面的該至少一部分以該調變拾取力將該至少一工件釋放於一第二基板。 The transfer method of claim 15, further comprising: causing the at least a portion of the pickup surface to pick up at least one workpiece from a first substrate with the inherent pickup force; and causing the at least a portion of the pickup surface to use the modulation The pick-up force releases the at least one workpiece to a second substrate. 如請求項15所述的轉移方法,更包括使得該拾取面的該至少一部分以該調變拾取力接觸至少一工件且使得該拾取面的至少另一部分以該固有拾取力接觸至少另一工件。 The transfer method of claim 15, further comprising causing the at least one portion of the pickup surface to contact at least one workpiece with the modulated pickup force and at least another portion of the pickup surface to contact at least another workpiece with the inherent pickup force. 如請求項15所述的轉移方法,其中該驅動電路包括一第一主動元件、一第二主動元件以及一電容,該第一主動元件連接在該第二主動元件以及該加熱件之間,且致能該至少一個加熱單元的該加熱件的方法包括:以該第二主動元件控制該第一主動元件的開啟及關閉。 The transfer method of claim 15, wherein the driving circuit comprises a first active element, a second active element and a capacitor, the first active element is connected between the second active element and the heating element, and The method for enabling the heating element of the at least one heating unit includes: controlling the opening and closing of the first active element with the second active element.
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