KR102702650B1 - Electronic device, manufactruing process of electronic device, and light emitting device transferring method - Google Patents

Abstract

A method for manufacturing a display device may include a step of forming a base layer, a step of forming a circuit layer on the base layer, an alignment step of sequentially arranging an insulating layer and a light-emitting element on the circuit layer, and a transfer step of drying the insulating layer to transfer the light-emitting element onto the circuit layer.

Description

ELECTRONIC DEVICE, MANUFACTRUING PROCESS OF ELECTRONIC DEVICE, AND LIGHT EMITTING DEVICE TRANSFERRING METHOD

The present invention relates to an electronic device having improved reliability and manufacturing yield, a method for manufacturing an electronic device, and a method for transferring a light-emitting element.

The electronic device may include a light-emitting element. The light-emitting element is electrically connected to an electrode and may emit light in response to a voltage applied to the electrode. The light-emitting element may be formed directly on the electrode, or may be formed separately from the electrode and connected to the electrode. When the light-emitting element is formed separately and then connected to the electrode, a process of aligning the light-emitting element over the electrode is required. If the light-emitting element is not properly aligned over the electrode, the light-emitting element may not emit light.

The present invention aims to provide an electronic device, an electronic device manufacturing method, and a light-emitting element transfer method with improved reliability and manufacturing yield.

A method for manufacturing an electronic device according to one embodiment of the present invention may include a step of forming a base layer, a step of forming a circuit layer on the base layer, an alignment step of sequentially arranging an insulating layer and a light-emitting element on the circuit layer, and a transfer step of drying the insulating layer to transfer the light-emitting element onto the circuit layer.

The alignment step may include a step of coating the insulating layer over the circuit layer, and a step of disposing a transport layer having the light-emitting element attached thereto over the insulating layer.

After the above transfer step, a separation step of separating the transfer layer from the light-emitting element may be further included.

The above transport layer is an ultraviolet-curable tape, and the separation step may include a step of irradiating the transport layer with ultraviolet rays.

The alignment step may include a step of attaching the light-emitting element onto a transport layer, a step of coating the insulating layer over the transport layer and the light-emitting element, and a step of arranging the insulating layer and the light-emitting element over the circuit layer.

After the above transfer step, a separation step may further be included for separating a portion of the insulating layer and the transfer layer from the light-emitting element.

The above insulating layer may include a polyimide-based resin.

After the above transfer step, a step of forming a connecting electrode electrically connecting the light-emitting element and the circuit layer may be further included.

The method may further include a step of patterning the insulating layer using the light-emitting element as a mask.

The adhesion of the above insulating layer may be higher after drying than before drying.

The thickness of the above insulating layer may be thinner than the thickness of the light-emitting element.

The above transition step may include a step of heat treating the insulating layer.

The step of forming the above base layer may include a step of forming island portions and bridge portions connecting the island portions.

An electronic device according to one embodiment of the present invention includes a base layer, a circuit layer disposed on the base layer, a first insulating layer disposed on the circuit layer, a light-emitting element disposed on the first insulating layer, a second insulating layer disposed on the circuit layer and in a peripheral area of the light-emitting element, and a connecting electrode disposed on the light-emitting element and electrically connecting the light-emitting element and the circuit layer, wherein a thickness of the first insulating layer may be thinner than a thickness of the second insulating layer.

The above first insulating layer may include a polyimide-based resin.

It may further include a heat dissipation layer disposed between the circuit layer and the first insulating layer.

The thickness of the first insulating layer may be 1 micrometer to 4 micrometers, and the thickness of the second insulating layer may be 3 micrometers to 7 micrometers.

The device further includes a first intermediate electrode disposed on the second insulating layer and electrically connected to the circuit layer, and a third insulating layer disposed on the second insulating layer and covering the first intermediate electrode and the light-emitting element, wherein the connection electrode is disposed on the third insulating layer and can be electrically connected to the first intermediate electrode and the light-emitting element.

The device further includes a second intermediate electrode disposed on the third insulating layer and electrically connected to the first intermediate electrode, and a fourth insulating layer disposed on the third insulating layer and covering the second intermediate electrode, wherein the connecting electrode is disposed on the fourth insulating layer and can be electrically connected to the second intermediate electrode and the light-emitting element.

The above base layer may include island sections spaced apart from each other and bridge sections connecting the island sections.

The circuit layer may include thin film transistors and signal wires electrically connected to the thin film transistors, the thin film transistors may be arranged on the island portions, and the signal wires may be arranged on the bridge portions.

The light emitting element is one of a plurality of light emitting elements, and the light emitting elements can be arranged on the island portions.

A light emitting element transfer method according to one embodiment of the present invention may include an alignment step of sequentially arranging an insulating layer, a light emitting element, and a transfer layer on a circuit board, a transfer step of drying the insulating layer to transfer the light emitting element onto the circuit board, and a separation step of separating the transfer layer from the light emitting element.

The alignment step may include a step of coating the insulating layer on the circuit board, and a step of placing the transfer layer with the light-emitting element attached thereto on the insulating layer.

The alignment step may include a step of attaching the light-emitting element onto the transfer layer, a step of coating the insulating layer over the transfer layer and the light-emitting element, and a step of arranging the insulating layer, the light-emitting element, and the transfer layer over the circuit board.

The above transport layer is an ultraviolet-curable tape, and the separation step may include a step of irradiating the transport layer with ultraviolet rays.

According to the present invention, a light-emitting element can be transferred onto a circuit layer using an insulating layer. The insulating layer can include a material used in an electronic device. Therefore, an additional adhesive layer can be omitted in order to transfer the light-emitting element onto the circuit layer. In addition, since the light-emitting element is transferred onto the circuit layer using a material used in an electronic device, the reliability of the electronic device can be secured.

FIG. 1 is a perspective view of an electronic device according to one embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of an electronic device according to one embodiment of the present invention.
FIG. 3 is an equivalent circuit diagram of a pixel according to one embodiment of the present invention.
FIG. 4A is a cross-sectional view illustrating a portion of an electronic device according to one embodiment of the present invention.
FIG. 4b is a cross-sectional view of a light-emitting element according to one embodiment of the present invention.
FIG. 5 is a cross-sectional view illustrating a portion of an electronic device according to one embodiment of the present invention.
FIG. 6 is a cross-sectional view illustrating a portion of an electronic device according to one embodiment of the present invention.
FIGS. 7A to 7F are cross-sectional views illustrating a method for manufacturing an electronic device according to one embodiment of the present invention.
FIGS. 8A to 8C are cross-sectional views illustrating a method for manufacturing an electronic device according to one embodiment of the present invention.
FIGS. 9A to 9E are cross-sectional views illustrating a method for manufacturing an electronic device according to one embodiment of the present invention.
FIG. 10 is a perspective view of an electronic device according to one embodiment of the present invention.
FIG. 11 illustrates an environment in which an electronic device according to one embodiment of the present invention is used.
FIG. 12A is a schematic plan view of an electronic device according to one embodiment of the present invention.
FIG. 12b is a schematic plan view of an electronic device according to one embodiment of the present invention.
Figure 13 is an exploded perspective view of a display device according to one embodiment of the present invention.

In this specification, when a component (or region, layer, portion, etc.) is referred to as being “on,” “connected to,” or “coupled to” another component, it means that it can be directly disposed/connected/coupled to the other component, or that a third component may be disposed between them.

Identical drawing symbols refer to identical components. Also, in the drawings, the thicknesses, proportions, and dimensions of the components are exaggerated for the purpose of effectively explaining the technical contents.

“And/or” includes any combination of one or more of the associated constructs that can be defined.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are only used to distinguish one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. The singular expression includes the plural expression unless the context clearly indicates otherwise.

Additionally, terms such as "below," "lower," "above," and "upper," are used to describe the relationships between components depicted in the drawings. These terms are relative concepts and are described based on the directions indicated in the drawings.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In addition, terms that are defined in commonly used dictionaries, such as terms, should be interpreted as having a meaning consistent with the meaning in the context of the relevant art, and may be explicitly defined herein, unless interpreted in an idealized or overly formal meaning.

It should be understood that the terms "include" or "have" are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a perspective view of an electronic device (ED) according to one embodiment of the present invention.

Referring to FIG. 1, the electronic device (ED) may be a display device that displays an image. The electronic device (ED) may be used in large electronic devices such as televisions, monitors, or outdoor billboards, as well as small and medium-sized electronic devices such as personal computers, notebook computers, personal digital assistants, car navigation units, game consoles, portable electronic devices, and cameras. In addition, these are presented only as examples, and it goes without saying that they may be employed in other electronic devices as long as they do not depart from the concept of the present invention.

An electronic device (ED) may have a display area (DA) and a non-display area (NDA) defined.

A display area (DA) on which an image (IM) is displayed is parallel to a plane defined by the first direction (DR1) and the second direction (DR2). A normal direction of the display area (DA), i.e., a thickness direction of the electronic device (ED), is indicated by a third direction (DR3). The front (or upper surface) and the back (or lower surface) of each member are distinguished by the third direction (DR3). However, the directions indicated by the first to third directions (DR1, DR2, DR3) are relative concepts and can be converted into other directions. Hereinafter, the first to third directions refer to the same drawing reference numerals as the directions indicated by the first to third directions (DR1, DR2, DR3), respectively.

The non-display area (NDA) is an area adjacent to the display area (DA) where no image (IM) is displayed. The bezel area of an electronic device (ED) can be defined by the non-display area (NDA).

The non-display area (NDA) may surround the display area (DA). However, the present invention is not limited thereto, and the shape of the display area (DA) and the shape of the non-display area (NDA) may be designed relatively. In addition, in one embodiment of the present invention, the non-display area (NDA) may be omitted.

FIG. 2 is a schematic cross-sectional view of an electronic device (ED) according to one embodiment of the present invention.

Referring to FIG. 2, the electronic device (ED) may include a display panel (DP) and a detection unit (SU).

The display panel (DP) may be an ultra-small light-emitting element display panel (DP) including ultra-small light-emitting elements. For example, the display panel (DP) may be a micro light-emitting element display panel (DP).

The display panel (DP) may include a base layer (BL), a circuit layer (ML), a light emitting element layer (EL), and a thin film encapsulation layer (TFE).

The base layer (BL) may include a flexible material, and for example, the base layer (BL) may be a plastic substrate. The plastic substrate may include at least one of an acrylic resin, a methacrylic resin, a polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a siloxane resin, a polyimide resin, a polyamide resin, and a perylene resin. For example, the base layer (BL) may include a single layer of a polyimide resin. However, the present invention is not limited thereto, and the base layer (BL) may be a laminated structure including a plurality of insulating layers. In another embodiment of the present invention, the base layer (BL) may include a rigid material, and for example, the base layer (BL) may be a glass substrate.

A circuit layer (ML) may be disposed on a base layer (BL). The circuit layer (ML) may include a plurality of insulating layers, a plurality of conductive layers, and a semiconductor layer.

A light-emitting element layer (EL) can be disposed on a circuit layer (ML). The light-emitting element layer (EL) includes a display element, for example, a micro light-emitting element. The micro light-emitting element can be a light-emitting diode.

A thin film encapsulation layer (TFE) encapsulates a light emitting element layer (EL). The thin film encapsulation layer (TFE) may include a plurality of inorganic layers and at least one organic layer disposed therebetween. In addition, the thin film encapsulation layer (TFE) may further include a buffer layer. The buffer layer may be a layer closest to the sensing unit (SU). The buffer layer may be an inorganic layer or an organic layer.

The sensing unit (SU) may include a circuit for detecting a touch. The touch detection method of the sensing unit (SU) may include, but is not limited to, a resistive method, an optical method, a capacitive method, and an ultrasonic method. Among these, the sensing unit (SU) of the capacitive method may detect whether a touch has occurred by using the capacitance that changes when a touch generating means comes into contact with the screen of the electronic device (ED). The capacitive method may be divided into a mutual capacitance method and a self-capacitance method.

The sensing unit (SU) may be directly disposed on the display panel (DP). "Directly disposed" means formed by a continuous process, excluding attachment using a separate adhesive member. However, the present invention is not limited thereto, and the display panel (DP) and the sensing unit (SU) may be coupled to each other by an adhesive member (not shown). In addition, in one embodiment of the present invention, the sensing unit (SU) may be omitted.

FIG. 3 is an equivalent circuit diagram of a pixel (PX) according to one embodiment of the present invention.

Referring to FIG. 3, pixels (PX) are arranged in a display area (DA, see FIG. 1) and can implement an image.

A pixel (PX) may be electrically connected to a plurality of signal wires. In FIG. 3, among the signal wires, scan wires (SLi, SLi-1), a data wire (DL), a first power wire (PL1), a second power wire (PL2), an initialization power wire (VIL), and an emission control wire (ECLi) are illustrated as examples. However, this is illustrated as an example, and a pixel (PX) according to an embodiment of the present invention may be additionally connected to various signal wires, and some of the illustrated signal wires may be omitted.

A pixel (PX) may include a light-emitting element (LED) and a pixel circuit (CC). The light-emitting element (LED) may be configured to be included in the light-emitting element layer (EL) of FIG. 2, and the pixel circuit (CC) may be configured to be included in the circuit layer (ML) of FIG. 2.

The pixel circuit (CC) may include a plurality of transistors (T1-T7) and a capacitor (CP). The pixel circuit (CC) may control the amount of current flowing to the light-emitting element (LED) in response to a data signal.

The light-emitting element (LED) can emit light at a predetermined brightness in response to the amount of current provided from the pixel circuit (CC). To this end, the level of the first power supply (ELVDD) can be set higher than the level of the second power supply (ELVSS).

Each of the plurality of transistors (T1-T7) may include an input electrode (or source electrode), an output electrode (or drain electrode), and a control electrode (or gate electrode). For convenience in this specification, one of the input electrode and the output electrode may be referred to as a first electrode, and the other may be referred to as a second electrode.

A first electrode of a first transistor (T1) may be connected to a first power wiring (PL1) via a fifth transistor (T5). The first power wiring (PL1) may be a wiring to which a first power supply (ELVDD) is provided. A second electrode of the first transistor (T1) is connected to an anode electrode of a light-emitting element (LED) via a sixth transistor (T6). The first transistor (T1) may be referred to as a driving transistor within the present specification.

The first transistor (T1) can control the amount of current flowing to the light-emitting element (LED) in response to the voltage applied to the control electrode of the first transistor (T1).

The second transistor (T2) is connected between the data line (DL) and the first electrode of the first transistor (T1). Further, the control electrode of the second transistor (T2) is connected to the ith scan line (SLi). When the ith scan signal is provided to the ith scan line (SLi), the second transistor (T2) is turned on to electrically connect the data line (DL) and the first electrode of the first transistor (T1).

The third transistor (T3) is connected between the second electrode of the first transistor (T1) and the control electrode of the first transistor (T1). The control electrode of the third transistor (T3) is connected to the ith scan line (SLi). When the ith scan signal is provided to the ith scan line (SLi), the third transistor (T3) is turned on to electrically connect the second electrode of the first transistor (T1) and the control electrode of the first transistor (T1). Therefore, when the third transistor (T3) is turned on, the first transistor (T1) is connected in a diode form.

The fourth transistor (T4) is connected between the node (ND) and the initialization power wiring (VIL). Further, the control electrode of the fourth transistor (T4) is connected to the i-1th scan wiring (SLi-1). The node (ND) may be a node to which the control electrodes of the fourth transistor (T4) and the first transistor (T1) are connected. When the i-1th scan signal is provided to the i-1th scan wiring (SLi-1), the fourth transistor (T4) is turned on to provide the initialization voltage (Vint) to the node (ND).

The fifth transistor (T5) is connected between the first power line (PL1) and the first electrode of the first transistor (T1). The sixth transistor (T6) is connected between the second electrode of the first transistor (T1) and the anode electrode of the light-emitting element (LED). The control electrode of the fifth transistor (T5) and the control electrode of the sixth transistor (T6) are connected to the ith light-emitting control line (ECLi).

The seventh transistor (T7) is connected between the initialization power wiring (VIL) and the anode electrode of the light-emitting element (LED). In addition, the control electrode of the seventh transistor (T7) is connected to the ith scan wiring (SLi). When the ith scan signal is provided to the ith scan wiring (SLi), the seventh transistor (T7) is turned on to provide the initialization voltage (Vint) to the anode electrode of the light-emitting element (LED).

The seventh transistor (T7) can improve the black expression capability of the pixel (PX). Specifically, when the seventh transistor (T7) is turned on, the parasitic capacitor (not shown) of the light-emitting element (LED) is discharged. Then, when implementing black brightness, the light-emitting element (LED) does not emit light due to the leakage current from the first transistor (T1), and thus the black expression capability can be improved.

Additionally, although the control electrode of the seventh transistor (T7) is illustrated in FIG. 3 as being connected to the i-th scan wiring (SLi), the present invention is not limited thereto. In another embodiment of the present invention, the control electrode of the seventh transistor (T7) may be connected to the i-1-th scan wiring (SLi-1) or the i+1-th scan wiring (not illustrated).

In Fig. 3, the drawing is based on PMOS, but is not limited thereto. In another embodiment of the present invention, the pixel circuit (CC) may be composed of NMOS. In yet another embodiment of the present invention, the pixel circuit (CC) may be composed of a combination of NMOS and PMOS.

A capacitor (CP) is placed between the first power line (PL1) and the node (ND). The capacitor (CP) stores a voltage corresponding to a data signal. Depending on the voltage stored in the capacitor (CP), the amount of current flowing through the first transistor (T1) when the fifth transistor (T5) and the sixth transistor (T6) are turned on can be determined.

The light emitting element (LED) can be electrically connected to the sixth transistor (T6) and the second power wire (PL2). The light emitting element (LED) can receive the second power supply (ELVSS) through the second power wire (PL2).

The light emitting element (LED) can emit light with a voltage corresponding to the difference between a signal transmitted through the sixth transistor (T6) and a second power supply (ELVSS) received through the second power supply wire (PL2).

The light emitting element (LED) may be a micro light emitting element. In Fig. 3, one light emitting element (LED) is connected between the sixth transistor (T6) and the second power wire (PL2) as an example, but the light emitting element (LED) may be provided in multiple numbers. The light emitting elements (ED) provided in multiple numbers may be connected in parallel with each other.

In the present invention, the structure of the pixel (PX) is not limited to the structure illustrated in Fig. 3. In other embodiments of the present invention, the pixel (PX) may be implemented in various forms for emitting light from a light-emitting element (LED).

FIG. 4A is a cross-sectional view illustrating a portion of an electronic device according to one embodiment of the present invention. FIG. 4B is a cross-sectional view of a light-emitting element according to one embodiment of the present invention.

Referring to FIG. 4a, a first insulating layer (10) may be placed on a base layer (BL). The first insulating layer (10) is illustrated as a single layer, but may include a plurality of layers. For example, the first insulating layer (10) may include a barrier layer and a buffer layer.

The barrier layer may include an inorganic material. The barrier layer may prevent oxygen or moisture introduced through the base layer (BL) from penetrating into the pixel (PX, see FIG. 3). The buffer layer may include an inorganic material. The buffer layer may provide the pixel (PX) with lower surface energy than the base layer (BL) so that the pixel (PX) is stably formed on the base layer (BL). The first insulating layer (10) may include one barrier layer and one buffer layer. However, this is exemplary, and the first insulating layer (10) according to an embodiment of the present invention may include a plurality of barrier layers and buffer layers that are provided and alternately laminated. Alternatively, at least one of the barrier layer and the buffer layer may be provided in a plurality or may be omitted.

A pixel (PX) may include a pixel circuit (CC, see FIG. 3) and a light-emitting element (LED). The pixel circuit (CC) may include transistors (T1-T7, see FIG. 3) and a capacitor (CP, see FIG. 3). In FIG. 4A, only one transistor (TR) among the components of the pixel circuit (CC) is illustrated. The transistor (TR) may be the first transistor (T1, see FIG. 3) described in FIG. 3.

A transistor (TR) may be placed on the first insulating layer (10). The transistor (TR) includes a semiconductor pattern (SP), a control electrode (CE), an input electrode (IE), and an output electrode (OE).

A semiconductor pattern (SP) is arranged on a first insulating layer (10). The semiconductor pattern (SP) may include a semiconductor material. For example, the semiconductor pattern (SP) may include polysilicon or amorphous silicon. In addition, the semiconductor pattern (SP) may include a metal oxide semiconductor. The semiconductor pattern (SP) may include a channel region that acts as a passage through which electrons or holes may move, a first ion doping region and a second ion doping region arranged with the channel region interposed therebetween.

The second insulating layer (20) is arranged on the semiconductor pattern (SP) and can cover the semiconductor pattern (SP). The second insulating layer (20) can include an inorganic material. The inorganic material can include at least one of silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide.

The control electrode (CE) may be disposed on the second insulating layer (20). The third insulating layer (30) may be disposed on the control electrode (CE) and may cover the control electrode (CE). The third insulating layer (30) may include an inorganic material.

The input electrode (IE) and the output electrode (OE) may be placed on the third insulating layer (30). The input electrode (IE) and the output electrode (OE) may be connected to the semiconductor pattern (SP) through through holes penetrating the second insulating layer (20) and the third insulating layer (30).

The fourth insulating layer (40) is disposed on the third insulating layer (30) and can cover the input electrode (IE) and the output electrode (OE). The fourth insulating layer (40) can include an inorganic material. The inorganic material can be silicon oxide.

In one embodiment of the present invention, the circuit layer (ML) may include a plurality of insulating layers (10, 20, 30, 40) and transistors (TR), etc. The circuit layer (ML) including the base layer (BL) may be referred to as a circuit board.

The first insulating layer (IL1) may be placed on the fourth insulating layer (40). That is, the first insulating layer (IL1) may be placed on the circuit layer (ML).

The first insulating layer (IL1) may include an organic material. The organic material may be a polymer organic material. The organic material may include at least one of a polyimide-based resin, an acrylic-based resin, a methacrylic-based resin, a polyisoprene, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a siloxane-based resin, a polyamide-based resin, a polycarbonate-based resin, a phenol-based resin, and a perylene-based resin, but is not limited thereto. The polycarbonate-based resin may have adhesive strength that changes depending on temperature. The first insulating layer (IL1) according to the present invention may include a material whose adhesive strength changes depending on the amount of solvent.

A light-emitting element (LED) may be arranged on the first insulating layer (IL1). The shape of the first insulating layer (IL1) on a plane may correspond to the shape of the light-emitting element (LED). For example, the area of the first insulating layer (IL1) on a plane may correspond to the area of the light-emitting element (LED).

The light emitting element (LED) can be transferred onto the circuit layer (ML) by utilizing the adhesive strength of the first insulating layer (IL1). The adhesive strength of the first insulating layer (IL1) can vary depending on the amount of solvent. In order to transfer the light emitting element (LED) onto the circuit layer (ML), the first insulating layer (IL1) can be dried at least once. For example, the first insulating layer (IL1) can be soft baked. The adhesive strength of the soft-baked first insulating layer (IL1) can be higher than the adhesive strength of the first insulating layer (IL1) before being soft-baked. The light emitting element (LED) can be transferred onto the circuit layer (ML) by the soft-baked first insulating layer (IL1). A specific description thereof will be described later.

Referring to FIG. 4b, the light emitting element (LED) may be a micro light emitting element having a width (WT) of several nanometers to several hundred micrometers. However, the width (WT) of the light emitting element (LED) is described only as an example, and the width (WT) of the light emitting element (LED) is not limited to the above numerical range.

A light emitting element (LED) may include a first electrode (E1), a second electrode (E2), a first semiconductor layer (SC1), a second semiconductor layer (SC2), and an active layer (AL). The active layer (AL) may be disposed between the first semiconductor layer (SC1) and the second semiconductor layer (SC2). The first electrode (E1) may be electrically connected to the first semiconductor layer (SC1), and the second electrode (E2) may be electrically connected to the second semiconductor layer (SC2).

The first semiconductor layer (SC1) can be a p-type semiconductor layer, and the second semiconductor layer (SC2) can be an n-type semiconductor layer. For example, the first semiconductor layer (SC1) can provide holes to the active layer (AL), and the second semiconductor layer (SC2) can provide electrons to the active layer (AL).

The first semiconductor layer (SC1) may be provided by doping a p-type dopant in the semiconductor layer, and the second semiconductor layer (SC2) may be provided by doping a n-type dopant in the semiconductor layer. The semiconductor layer may include a semiconductor material, and the semiconductor material may be, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, or AlInN, but is not limited thereto. The n-type dopant may be, but is not limited to, silicon (Si), germanium (Ge), tin (Sn), selenium (Se), tellurium (Te), or a combination thereof. The p-type dopant may be, but is not limited to, magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), or barium (Ba), or a combination thereof.

The active layer (AL) can be formed by at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, or a quantum dot structure. The active layer (AL) can be a region where electrons injected through the second semiconductor layer (SC2) and holes injected through the first semiconductor layer (SC1) recombine. The active layer (AL) is a layer that emits light having energy determined by an energy band inherent to the material. The position of the active layer can vary depending on the type of diode.

Referring again to FIG. 4a, the first insulating layer (IL1) may be in direct contact with one side of the light emitting element (LED). The one side may be a bottom surface of the light emitting element (LED) where the first electrode (E1) and the second electrode (E2) are not arranged. In the present specification, "the configuration of A and the configuration of B are in direct contact" may mean that no separate adhesive layer/adhesive material is arranged between the configuration of A and the configuration of B.

The second insulating layer (IL2) may be disposed on the fourth insulating layer (40). The second insulating layer (IL2) may be disposed on the circuit layer (ML). The second insulating layer (IL2) may be disposed in a peripheral area of the light emitting element (LED). For example, the second insulating layer (IL2) may not overlap with the light emitting element (LED) on a plane.

The first insulating layer (IL1) and the second insulating layer (IL2) can be formed through separate processes. For example, the second insulating layer (IL2) can be formed after the first insulating layer (IL1) is formed. The second insulating layer (IL2) can include the same material as the first insulating layer (IL1). For example, the first insulating layer (IL1) and the second insulating layer (IL2) can include a polyimide-based resin.

Unlike the present invention, when an adhesive or adhesive is used, the sealing performance may be deteriorated by air bubbles generated in the adhesive or adhesive during a subsequent process. This may deteriorate the performance of the electronic device. However, according to an embodiment of the present invention, the light emitting element (LED) can be transferred onto the circuit layer (ML) by using the first insulating layer (IL1) including the same material as the insulating layer of the electronic device (ED), for example, the second insulating layer (IL2). That is, according to an embodiment of the present invention, the light emitting element (LED) can be transferred onto the circuit layer (ML) by utilizing a change in the adhesiveness of a material previously used in the electronic device (ED). That is, an additional adhesive or adhesive may not be used to transfer the light emitting element (LED) onto the circuit layer (ML).

The first thickness (TK1) of the first insulating layer (IL1) may be smaller than the thickness (TK2) of the second insulating layer (IL2). For example, the first thickness (TK1) may be 1 micrometer to 4 micrometers, and the second thickness (TK2) may be 3 micrometers to 7 micrometers.

Each of the first thickness (TK1) and the second thickness (TK2) may be smaller than the thickness (TKM) of the light-emitting element (LED). For example, when the thickness of the light-emitting element (LED) is 7 micrometers to 8 micrometers, each of the first thickness (TK1) and the second thickness (TK2) may be 7 micrometers or less. For example, it may be 5 micrometers. However, this is merely an example, and the first thickness (TK1), the second thickness (TK2), and the thickness (TKM) are not limited to the above example.

A first intermediate electrode (MCN1) may be placed on the second insulating layer (IL2). The first intermediate electrode (MCN1) may penetrate the second insulating layer (IL2) and the fourth insulating layer (40) and be electrically connected to the output electrode (OE).

A third insulating layer (IL3) may be disposed on the second insulating layer (IL2). The third insulating layer (IL3) may cover the first intermediate electrode (MCN1) and the light-emitting element (LED). The third insulating layer (IL3) may include the same material as the first insulating layer (IL1). For example, the third insulating layer (IL3) may include a polyimide-based resin or the like.

A second intermediate electrode (MCN2) may be disposed on the third insulating layer (IL3). The second intermediate electrode (MCN2) may penetrate the third insulating layer (IL3) and be electrically connected to the first intermediate electrode (MCN1).

A fourth insulating layer (IL4) may be arranged on the third insulating layer (IL3). The fourth insulating layer (IL4) may cover the second intermediate electrode (MCN2).

A first connection electrode (CNE1) and a second connection electrode (CNE2) can be placed on the fourth insulating layer (IL4).

The first connecting electrode (CNE1) can be connected to the second intermediate electrode (MCN2) through the fourth insulating layer (IL4) and to the first electrode (E1) through the third insulating layer (IL3) and the fourth insulating layer (IL4). That is, the first electrode (E1) of the light-emitting element (LED) can be electrically connected to the output electrode (OE) of the transistor (TR) through the first connecting electrode (CNE1), the first intermediate electrode (MCN1), and the second intermediate electrode (MCN2).

The second connecting electrode (CNE2) may be connected to the second electrode (E2) of the light emitting element (LED) through the third insulating layer (IL3) and the fourth insulating layer (IL4). In addition, although not shown, the second connecting electrode (CNE2) may be connected to the second power supply line (PL2, see FIG. 3). Accordingly, the second power supply (ELVSS, see FIG. 3) may be provided to the second electrode (E2).

A fifth insulating layer (IL5) may be arranged on the fourth insulating layer (IL4). The fifth insulating layer (IL5) may cover the first connection electrode (CNE1) and the second connection electrode (CNE2).

Meanwhile, in Fig. 4a, the third insulating layer (IL3), the fourth insulating layer (IL4), the first intermediate electrode (MCN1), and the second intermediate electrode (MCN2) are arranged on the first insulating layer (IL1) and the second insulating layer (IL2), but the present invention is not limited thereto. The number of insulating layers and the number of intermediate electrodes arranged on the first insulating layer (IL1) and the second insulating layer (IL2) may be smaller or larger depending on the thickness of the light-emitting element (LED).

Fig. 5 is a cross-sectional view illustrating a portion of an electronic device according to one embodiment of the present invention. In describing Fig. 5, emphasis will be given to parts that are different from Fig. 4a.

Referring to FIG. 5, a first insulating layer (IL1a) may be disposed on a fourth insulating layer (40). The first insulating layer (IL1a) may include a first insulating region (ILa) under a light-emitting element (LED) and a second insulating region (ILb) disposed in a peripheral region of the light-emitting element (LED). The first insulating region (ILa) and the second insulating region (ILb) may be layers formed simultaneously through the same process.

In order to transfer the light emitting element (LED) onto the circuit layer (ML), the first insulating layer (IL1a) may be dried at least once. For example, the first insulating layer (IL1a) may be soft baked. The light emitting element (LED) may be transferred onto the circuit layer (ML) by the soft-baked first insulating layer (IL1a). During the process of transferring the light emitting element (LED), pressure may be applied to the first insulating region (ILa) of the first insulating layer (IL1a). Accordingly, the thickness (TK1a) of the first insulating region (ILa) may be smaller than the thickness (TK2a) of the second insulating region (ILb). Accordingly, at least a portion of the light emitting element (LED) in the thickness direction, for example, in the third direction (DR3), may be surrounded by the first insulating layer (IL1a).

Fig. 6 is a cross-sectional view illustrating a portion of an electronic device according to one embodiment of the present invention. In describing Fig. 6, emphasis will be given to parts that are different from Fig. 5.

Referring to FIG. 6, the first insulating layer (IL1a) that directly contacts the light-emitting element (LED) may include a material having high heat resistance. For example, the first insulating layer (IL1a) may include a polyimide-based resin. In addition, a heat dissipation layer (HTS) may be further disposed between the circuit layer (ML) and the first insulating layer (IL1a). The heat dissipation layer (HTS) may be disposed under the light-emitting element (LED). The heat dissipation layer (HTS) may diffuse heat generated from the light-emitting element (LED) to prevent a temperature rise in a specific localized area of the light-emitting element (LED).

The heat dissipation layer (HTS) may include a material having excellent thermal conductivity. For example, the heat dissipation layer (HTS) may be a polymer composite material using metal particles as fillers. The metal particles may include at least one of aluminum, silver, copper, and nickel. The heat dissipation layer (HTS) may be a polymer composite material including ceramic powder. The ceramic powder may be at least one of aluminum nitride, aluminum oxide, boron nitride, silicon carbide, and beryllium oxide. The heat dissipation layer (HTS) may include a carbon composite material. The carbon composite material may be at least one of graphite, carbon nanotubes, carbon fibers, and graphene. The heat dissipation layer (HTS) may be a metal thin film layer having excellent thermal conductivity and light reflectivity. The metal thin film layer may include at least one of aluminum, gold, silver, copper, nickel, and molybdenum.

FIGS. 7A to 7F are cross-sectional views illustrating a method for manufacturing an electronic device according to one embodiment of the present invention.

Referring to Fig. 7a, a base layer (BL) is formed. Although not shown, the base layer (BL) may be formed on a carrier substrate (not shown). The carrier substrate may be, for example, a glass substrate. A circuit layer (ML) is formed on the base layer (BL).

Referring to Fig. 7b, an insulating layer (PIL) is formed on a circuit layer (ML). The insulating layer (PIL) can be coated on the circuit layer (ML). For example, a spin coating process can be used to form the insulating layer (PIL).

Referring to FIGS. 7b and 7c, a light-emitting element (LED) and a transport layer (TRL) are sequentially arranged on an insulating layer (PIL). That is, in a cross-section, an insulating layer (PIL) may be sequentially arranged on a circuit layer (ML), a light-emitting element (LED) may be sequentially arranged on the insulating layer (PIL), and a transport layer (TRL) may be sequentially arranged on the light-emitting element (LED).

The insulation layer (PIL) is dried to form a dry insulation layer (PIL-1). The amount of solvent in the dry insulation layer (PIL-1) may be less than the amount of solvent in the insulation layer (PIL). The dry insulation layer (PIL-1) may mean a soft-baked insulation layer (PIL). For example, the dry insulation layer (PIL-1) may be formed by applying heat in a predetermined temperature range for a predetermined time to the insulation layer (PIL). The predetermined time may be, for example, 10 seconds to 3 minutes, and the predetermined temperature range may be 50 degrees to 200 degrees. The predetermined time and the predetermined temperature range may be variously selected as long as the adhesive strength of the dry insulation layer (PIL-1) is higher than the adhesive strength of the insulation layer (PIL), and are not limited to a specific range.

A light-emitting element (LED) can be brought into contact with the dry insulating layer (PIL-1). The adhesive force between the dry insulating layer (PIL-1) and the light-emitting element (LED) may be greater than the adhesive force between the transport layer (TRL) and the light-emitting element (LED). In one embodiment of the present invention, after bringing the light-emitting element (LED) into contact with the insulating layer (PIL), the insulating layer (PIL) may be soft-baked to form the dry insulating layer (PIL-1).

Referring to Fig. 7d, after the light-emitting element (LED) is brought into contact with the dry insulating layer (PIL-1), the transfer layer (TRL) is separated from the light-emitting element (LED). The transfer layer (TRL) may be a UV-curable tape. For example, if the transfer layer (TRL) is irradiated with UV light, the adhesive strength of the transfer layer (TRL) may be reduced.

The ultraviolet ray may be irradiated to the transport layer (TRL) before aligning the light emitting element (LED) and the transport layer (TRL) on the insulating layer (PIL), or may be irradiated to the transport layer (TRL) after the light emitting element (LED) is brought into contact with the dry insulating layer (PIL-1).

Referring to FIG. 7e, a dry insulating layer (PIL-1) can be patterned using a light-emitting element (LED) as a mask. Accordingly, a first insulating layer (IL1) can be formed.

Referring to FIG. 7f, a second insulating layer (IL2) can be formed. The second insulating layer (IL2) can include the same material as the first insulating layer (IL1). For example, the second insulating layer (IL2) can include a polyimide-based resin. The second insulating layer (IL2) can be formed using a spin coating process.

The thickness of the first insulating layer (IL1) may be reduced during the process of transferring the light emitting element (LED). Therefore, the thickness of the first insulating layer (IL1) may be thinner than the thickness of the second insulating layer (IL2).

Thereafter, a first intermediate electrode (MCN1), a third insulating layer (IL3), a second intermediate electrode (MCN2), and a fourth insulating layer (IL4) can be sequentially formed. Thereafter, a first connection electrode (CNE1) and a second connection electrode (CNE2) can be formed to electrically connect the light-emitting element (LED) to the circuit layer (ML).

According to an embodiment of the present invention, the first insulating layer (IL1) that couples the light-emitting element (LED) to the circuit layer (ML) may be one of the same materials as the insulating layer included in the display panel (DP, see FIG. 3). That is, since the light-emitting element (LED) is transferred by utilizing the change in adhesiveness according to the amount of solvent in the insulating layer, the adhesive layer for transferring the light-emitting element (LED) may be omitted. The adhesive layer may cause bubbles to be generated in a subsequent process, which may deteriorate panel performance. However, according to an embodiment of the present invention, since the light-emitting element (LED) is transferred by utilizing the insulating layer used in the display panel (DP), the above problem can be prevented.

In addition, unlike the present invention, when the connecting electrodes are formed first and then the light emitting element (LED) is transferred, pressure may be applied to the connecting electrodes during the process of transferring the light emitting element (LED), and the connecting electrodes may be damaged. However, according to an embodiment of the present invention, since the first and second connecting electrodes (CNE1, CNE2) are formed after transferring the light emitting element (LED), the electrical connection stability between the light emitting element (LED) and the circuit layer (ML) can be improved.

FIGS. 8A to 8C are cross-sectional views illustrating a method for manufacturing an electronic device according to one embodiment of the present invention.

Referring to FIG. 8a, a light-emitting element (LED) is attached to a transport layer (TRL). An insulating layer (PILa) is coated on the light-emitting element (LED) and the transport layer (TRL). The insulating layer (PILa) may include a first insulating region (PILx) disposed on the light-emitting element (LED) and a second insulating region (PILy) disposed on the transport layer (TRL).

Referring to FIG. 8b, an insulating layer (PILa), a light-emitting element (LED), and a transport layer (TRL) are arranged sequentially on a circuit layer (ML). Thereafter, the insulating layer (PILa) is dried. This step may be a soft baking step. In one embodiment of the present invention, the insulating layer (PILa) may be dried first, and then the insulating layer (PILa), a light-emitting element (LED), and a transport layer (TRL) may be arranged sequentially on a circuit layer (ML).

As the solvent included in the insulating layer (PILa) is evaporated, the adhesive strength of the insulating layer (PILa) may increase. The insulating layer (PILa) that has completed the soft baking step is referred to as a dry insulating layer (PILa-1). The dry insulating layer (PILa-1) may include a first dry insulating region (PILx-1) disposed on a light-emitting element (LED) and a second dry insulating region (PILy-1) disposed on a transport layer (TRL).

The first dry insulating region (PILx-1) can be attached to the circuit layer (ML). For example, the first dry insulating region (PILx-1) can be attached to the fourth insulating layer (40). The adhesion between the first dry insulating region (PILx-1) and the fourth insulating layer (40) and the adhesion between the first dry insulating region (PILx-1) and the light emitting element (LED) can be greater than the adhesion between the light emitting element (LED) and the transport layer (TRL).

Referring to Fig. 8c, the transport layer (TRL) is separated from the light emitting element (LED). In this case, the light emitting element (LED) is attached to the circuit layer (ML) with the first dry insulating region (PILx-1) interposed therebetween, and the second dry insulating region (PILy-1) and the transport layer (TRL) can be separated from the light emitting element (LED).

FIGS. 9A to 9E are cross-sectional views illustrating a method for manufacturing an electronic device according to one embodiment of the present invention.

Referring to Fig. 9a, a heat dissipation layer (HTS) is formed on a circuit layer (ML). The heat dissipation layer (HTS) may be a metal thin film layer having excellent thermal conductivity and light reflectivity.

Referring to Fig. 9b, an insulating layer (PIL) covering a heat dissipation layer (HTS) is formed on a circuit layer (ML). The insulating layer (PIL) can be coated on the circuit layer (ML). For example, a spin coating process can be used to form the insulating layer (PIL).

Referring to FIGS. 9b and 9c, a light-emitting element (LED) and a transport layer (TRL) are sequentially arranged on an insulating layer (PIL). That is, in a cross-section, a heat-dissipation layer (HTS) may be sequentially arranged on a circuit layer (ML), an insulation layer (PIL) on the heat-dissipation layer (HTS), a light-emitting element (LED) on the insulation layer (PIL), and a transport layer (TRL) on the light-emitting element (LED).

The insulating layer (PIL) is dried to form a dry insulating layer (PIL-1). The amount of solvent in the dry insulating layer (PIL-1) may be less than the amount of solvent in the insulating layer (PIL). A light-emitting element (LED) may be brought into contact with the dry insulating layer (PIL-1). The adhesive force between the dry insulating layer (PIL-1) and the light-emitting element (LED) may be greater than the adhesive force between the transport layer (TRL) and the light-emitting element (LED).

Referring to Fig. 9d, after the light-emitting element (LED) is brought into contact with the dry insulating layer (PIL-1), the transfer layer (TRL) is separated from the light-emitting element (LED). During the process of transferring the light-emitting element (LED), the thickness of some areas of the dry insulating layer (PIL-1) may be reduced.

Referring to FIG. 9e, a first insulating layer (IL1a) can be formed by hard baking a dry insulating layer (PIL-1). A first intermediate electrode (MCN1), a third insulating layer (IL3), a second intermediate electrode (MCN2), and a fourth insulating layer (IL4) can be sequentially formed on the first insulating layer (IL1a). Thereafter, a first connection electrode (CNE1) and a second connection electrode (CNE2) can be formed to electrically connect a light-emitting element (LED) to a circuit layer (ML). FIG. 10 is a perspective view of an electronic device (ED-1) according to an embodiment of the present invention.

Referring to FIG. 10, the electronic device (ED-1) may be a flexible electronic device (ED-1). The flexible electronic device (ED-1) may be bent into various shapes. The flexible electronic device (ED-1) may provide an image through a display area (DA-1) whose shape may be changed.

Since the flexible electronic device (ED-1) has a flexible property, cracks may not occur in the components constituting the flexible electronic device (ED-1) even if its shape is deformed.

FIG. 11 illustrates an environment in which an electronic device according to one embodiment of the present invention is used.

Referring to FIG. 11, electronic devices (ED-2a, ED-2b, ED-2c) may be mounted inside a vehicle. For example, the electronic devices (ED-2a, ED-2b, ED-2c) may include a first electronic device (ED-2a) that displays various information required for driving a vehicle, a second electronic device (ED-2b) for operating various systems such as an air conditioner, a heater, audio, and air circulation, and a third electronic device (ED-2c) that displays a rear image.

The mounting surface of the automobile on which the first to third electronic devices (ED-2a, ED-2b, ED-2c) are mounted may have a curve. According to an embodiment of the present invention, the first to third electronic devices (ED-2a, ED-2b, ED-2c) may stretch in response to the shape of the curved mounting surface. Therefore, the stretchable electronic device according to an embodiment of the present invention can be easily mounted on various mounting surfaces.

FIG. 12A is a schematic plan view of an electronic device according to one embodiment of the present invention.

Referring to FIG. 12a, a schematic plan view of each of the electronic devices (ED-2a, ED-2b, ED-2c) illustrated in FIG. 11 is illustrated.

The base layer (BL) of the stretchable electronic devices (ED-2a, ED-2b, ED-2c) may include island sections (IS) and bridge sections (BR).

The islands (IS) can be arranged along the first direction (DR1) and the second direction (DR2). The bridge parts (BR) can be connected to the islands (IS). For example, adjacent islands (IS) can be connected to each other through at least one bridge part. When the base layer (BL) is extended, the spacing between the islands (IS) can increase or decrease. For example, the shape or position of the bridge parts (BR) can be changed without changing the shape of the islands (IS) themselves.

At least one pixel may be arranged in each of the islands (IS). FIG. 12a illustrates, by way of example, first to third pixels (PX1, PX2, PX3) arranged in one island. The first pixel (PX1) may be a blue pixel, the second pixel (PX2) may be a green pixel, and the third pixel (PX3) may be a red pixel.

Each of the first to third pixels (PX1, PX2, PX3) includes a pixel circuit (CC, see FIG. 3) and a light-emitting element (LED, see FIG. 3), and the pixel circuit (CC) may include transistors (T1-T7, see FIG. 3). That is, the transistors (T1-T7) and the light-emitting element (LED, see FIG. 3) may be arranged on the island portions (IS).

The first to third pixels (PX1, PX2, PX3) illustrated in Fig. 12a may correspond to pixel areas to which light is provided. For reference, the cross-sectional view illustrated in Fig. 4a may be a cross-sectional view taken along line I-I` in Fig. 12a. One pixel area may correspond to an area to which light is provided by one light-emitting element (LED, see Fig. 4a).

Signal wires (SLi, SLi-1, ECLi, DLa, DLb, DLc, PL1, PL2, VIL) electrically connected to the pixel circuit (CC) may be arranged on the bridge portions (BR). For example, a first data wire (DLa) may be electrically connected to a first pixel (PX1), a second data wire (DLb) may be electrically connected to a second pixel (PX2), and a third data wire (DLc) may be electrically connected to a third pixel (PX3). An i-th scan wire (SLi), an i-1-th scan wire (SLi-1), an emission control wire (ECLi), a first power wire (PL1), a second power wire (PL2), and an initialization power wire (VIL) may be electrically connected to the first to third pixels (PX1, PX2, PX3), respectively.

FIG. 12b is a schematic plan view of an electronic device according to one embodiment of the present invention.

Referring to FIG. 12b, at least one pixel may be arranged in each of the islands (IS). In FIG. 12a, first to third pixels (PX1a, PX2a, PX3a) may be arranged in one island.

Each of the first to third pixels (PX1a, PX2a, PX3a) may include a pixel circuit (CC, see FIG. 3) and two or more light-emitting elements (LED, see FIG. 3). FIG. 12b illustrates two pixel areas (SPX1) corresponding to two light-emitting elements (LEDs) of each of the first to third pixels (PX1a, PX2a, PX3a). According to an embodiment of the present invention, even if a problem occurs in one of the two light-emitting elements constituting the first pixel (PX1a), light can be provided by the other light-emitting element. Therefore, product reliability can be improved.

Figure 13 is an exploded perspective view of a display device according to one embodiment of the present invention.

Referring to FIG. 13, the display device (DD) may be a liquid crystal display device. The display device (DD) may include a display panel (DP-I) and an electronic device (ED-3).

The display panel (DP-I) implements an image by controlling the transmittance of each pixel (PX) based on the provided light. In the present embodiment, the display panel (DP-I) may be a light-transmitting display panel, and may be, for example, a liquid crystal display panel.

An electronic device (ED-3) may be placed under the display panel (DP-I). The electronic device (ED-3) faces the display panel (DP-I) and may provide light to the display panel (DP-I).

The electronic device (ED-3) may be a light source, and the electronic device (ED-3) may include a circuit board (CB) and light-emitting elements (LEDs). The circuit board (CB) may be disposed under the display panel (DP-I). The circuit board (CB) may have a plate shape facing the display panel (DP-I). Although not shown, the circuit board (CB) may include a base substrate and circuit wirings mounted on the base substrate. The circuit wirings may receive an electrical signal from the outside and transmit it to the light-emitting elements (LEDs), or electrically connect the light-emitting elements (LEDs).

Each of the light emitting elements (LEDs) generates light. The light emitting elements (LEDs) can be arranged on a circuit board (CB) and electrically connected to the circuit board (CB). The light emitting elements (LEDs) can be arranged spaced apart from each other. In the present embodiment, the light emitting elements (LEDs) can be arranged side by side along a first direction (DR1) and a second direction (DR2).

Light-emitting elements (LEDs) are arranged between a circuit board (CB) and a display panel (DP-I) to provide light to the display panel (DP-I). Each of the light-emitting elements (LEDs) may include a micro light-emitting element. Each of the light-emitting elements (LEDs) may be transferred onto the circuit board (CB) by applying the method illustrated in FIGS. 7A to 7F, 8A to 8C, or 9A to 9E.

Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes may be made to the present invention without departing from the spirit and technical scope of the present invention as set forth in the claims below. Accordingly, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

ED: Electronic Device BL: Base Layer
ML: Circuit layer LED: Light-emitting element
IL1: First insulation layer IL2: Second insulation layer
TRL: Transport layer HTS: Radiation layer

Claims (26)

Step of forming a base layer;
A step of forming a circuit layer on the base layer;
An alignment step of sequentially arranging an insulating layer and a light-emitting element on the above circuit layer;
A transfer step of drying the insulating layer and transferring the light-emitting element onto the circuit layer;
A step of removing a portion of the insulating layer to form a first insulating layer disposed between the light-emitting element and the circuit layer; and
A step of forming a second insulating layer disposed on the circuit layer and surrounding the light-emitting element and the first insulating layer,
A method for manufacturing an electronic device in which the area of the first insulating layer and the area of the light-emitting element are the same on a plane. In the first paragraph,
The above sorting step is,
A step of coating the insulating layer on the circuit layer; and
A method for manufacturing an electronic device, comprising the step of placing a transport layer having the light-emitting element attached thereto on the insulating layer. In the second paragraph,
A method for manufacturing an electronic device further comprising a separation step of separating the transfer layer from the light-emitting element after the above-mentioned transfer step. In the third paragraph,
A method for manufacturing an electronic device, wherein the transfer layer is an ultraviolet-curable tape, and the separation step includes a step of irradiating the transfer layer with ultraviolet rays. In the first paragraph,
The above sorting step is,
A step of attaching the above light-emitting element onto a transport layer;
A step of coating the insulating layer on the above transport layer and the light-emitting element; and
A method for manufacturing an electronic device, comprising the step of placing the insulating layer and the light-emitting element on the circuit layer. In clause 5,
A method for manufacturing an electronic device further comprising a separation step of separating a portion of the insulating layer and the transfer layer from the light-emitting element after the transfer step. In the first paragraph,
A method for manufacturing an electronic device, wherein the insulating layer comprises a polyimide-based resin. In the first paragraph,
A method for manufacturing an electronic device further comprising, after the above-mentioned transfer step, a step of forming a connecting electrode that electrically connects the light-emitting element and the circuit layer. In the first paragraph,
A method for manufacturing an electronic device, wherein the step of forming the first insulating layer includes a step of patterning the insulating layer using the light-emitting element as a mask. In the first paragraph,
A method for manufacturing an electronic device, wherein the adhesive strength of the insulating layer is higher after drying than before drying. In the first paragraph,
A method for manufacturing an electronic device, wherein the thickness of the insulating layer is thinner than the thickness of the light-emitting element. In the first paragraph,
A method for manufacturing an electronic device, wherein the above-mentioned transfer step includes a step of heat-treating the insulating layer. In the first paragraph,
A method for manufacturing an electronic device, wherein the step of forming the base layer includes a step of forming island portions and bridge portions connecting the island portions. base layer;
A circuit layer disposed on the above base layer;
A first insulating layer disposed on the above circuit layer;
A light emitting element disposed on the first insulating layer;
A second insulating layer disposed on the circuit layer, disposed in a peripheral area of the light-emitting element, and surrounding the light-emitting element and the first insulating layer;
A first intermediate electrode disposed on the second insulating layer and electrically connected to the circuit layer through the second insulating layer; and
A connecting electrode is disposed on the light-emitting element and is electrically connected to the first intermediate electrode and electrically connects the light-emitting element and the circuit layer, and the thickness of the first insulating layer is thinner than the thickness of the second insulating layer.
An electronic device in which the area of the first insulating layer and the area of the light-emitting element are the same on a plane. In Article 14,
An electronic device wherein the first insulating layer comprises a polyimide-based resin. In Article 14,
An electronic device further comprising a heat dissipation layer disposed between the circuit layer and the first insulating layer. In Article 14,
An electronic device wherein the thickness of the first insulating layer is 1 micrometer to 4 micrometers, and the thickness of the second insulating layer is 3 micrometers to 7 micrometers. In Article 14,
An electronic device further comprising a third insulating layer disposed on the second insulating layer and covering the first intermediate electrode and the light-emitting element, wherein the connecting electrode is disposed on the third insulating layer and electrically connected to the first intermediate electrode and the light-emitting element. In Article 18,
A second intermediate electrode disposed on the third insulating layer and electrically connected to the first intermediate electrode; and
An electronic device further comprising a fourth insulating layer disposed on the third insulating layer and covering the second intermediate electrode, wherein the connecting electrode is disposed on the fourth insulating layer and electrically connected to the second intermediate electrode and the light-emitting element. In Article 14,
An electronic device wherein the base layer comprises islands spaced apart from each other and bridges connecting the islands. In Article 20,
An electronic device wherein the circuit layer includes thin film transistors and signal wires electrically connected to the thin film transistors, the thin film transistors are arranged on the island portions, and the signal wires are arranged on the bridge portions. In Article 20,
An electronic device wherein the light emitting element is one of a plurality of light emitting elements, and the light emitting elements are arranged on the island portions. An alignment step of sequentially arranging an insulating layer, a light-emitting element, and a transport layer on a circuit board; and
A transfer step of drying the insulating layer and transferring the light-emitting element onto the circuit board;
A separation step for separating the above transport layer from the above light-emitting element;
A step of removing a portion of the insulating layer to form a first insulating layer disposed between the light-emitting element and the circuit board; and
A step of forming a second insulating layer disposed on the circuit board and surrounding the light-emitting element and the first insulating layer,
A method for transferring a light-emitting element in which the area of the first insulating layer and the area of the light-emitting element are the same on a plane. In Article 23,
The above sorting step is,
a step of coating the insulating layer on the circuit board; and
A light-emitting element transfer method comprising the step of disposing the transfer layer having the light-emitting element attached thereto on the insulating layer. In Article 23,
The above sorting step is,
A step of attaching the light-emitting element onto the transport layer;
A step of coating the insulating layer on the above transport layer and the light-emitting element; and
A light-emitting element transfer method comprising the step of disposing the insulating layer, the light-emitting element, and the transfer layer on the circuit board. In Article 23,
A light-emitting element transfer method, wherein the transfer layer is an ultraviolet-curable tape, and the separation step includes a step of irradiating ultraviolet rays to the transfer layer.

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