CN117059670B - Silicon carbide diode and manufacturing method thereof - Google Patents
Silicon carbide diode and manufacturing method thereof Download PDFInfo
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- CN117059670B CN117059670B CN202311318893.XA CN202311318893A CN117059670B CN 117059670 B CN117059670 B CN 117059670B CN 202311318893 A CN202311318893 A CN 202311318893A CN 117059670 B CN117059670 B CN 117059670B
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 130
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000004891 communication Methods 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 44
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 230000017525 heat dissipation Effects 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000003566 sealing material Substances 0.000 claims description 3
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000004945 silicone rubber Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 6
- 239000000853 adhesive Substances 0.000 claims 4
- 230000001070 adhesive effect Effects 0.000 claims 4
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 238000009825 accumulation Methods 0.000 abstract description 2
- 230000001133 acceleration Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H01L29/861—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H01L29/0603—
-
- H01L29/6606—
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a silicon carbide diode and a manufacturing method thereof, the silicon carbide diode comprises a shell, a silicon carbide chip is arranged in the shell, the silicon carbide chip comprises a silicon carbide substrate, an epitaxial layer, cathode metal, anode metal and an insulating layer, the bottom of the silicon carbide substrate is connected with the cathode metal, the top of the silicon carbide substrate is connected with the epitaxial layer, and a groove is reserved on the epitaxial layer; the anode metal is connected with the first conductive pin, and the cathode metal is connected with the second conductive pin; the first conductive pin is provided with the movable communication block and the insulating groove, and the accelerating layer is arranged in the silicon carbide chip, so that the band gap and the electron mobility of the epitaxial layer are changed, better electron transmission performance and lower resistance can be realized, and the problems that heat accumulation can cause temperature rise and overhigh temperature can increase the power consumption of the silicon carbide diode are solved.
Description
Technical Field
The invention relates to the field of semiconductor chip manufacturing processes, in particular to a silicon carbide diode and a manufacturing method thereof.
Background
Silicon carbide materials are suitable for use in high temperature, high frequency, high power and extreme environments due to their range of excellent properties such as wide band gap, high breakdown field strength, high thermal conductivity, high saturated electron transfer rate and excellent physicochemical stability.
When silicon carbide diodes are in high load operation for long periods of time, continuous heat is generated due to energy conversion and current transfer. If the heat dissipation is insufficient, heat build up can lead to elevated temperatures, which can increase the power consumption of the silicon carbide diode. Under high temperature conditions, the internal resistance of the silicon carbide diode increases, resulting in more heat being generated as current flows through the device, which further exacerbates the temperature rise problem.
Disclosure of Invention
The present invention is directed to solving the above-mentioned problems and provides a silicon carbide diode and a method for manufacturing the same.
The technical scheme of the invention is realized as follows: the silicon carbide diode comprises a shell, wherein a silicon carbide chip is arranged in the shell, the silicon carbide chip comprises a silicon carbide substrate, an epitaxial layer, cathode metal, anode metal and an insulating layer, the bottom of the silicon carbide substrate is connected with the cathode metal, the top of the silicon carbide substrate is connected with the epitaxial layer, the top of the epitaxial layer is connected with the anode metal, an insulating layer is arranged between the epitaxial layer and the anode metal, a part of the anode metal is embedded into the epitaxial layer, the insulating layer is also arranged between the cathode metal and the silicon carbide substrate, the insulating layer surrounds the epitaxial layer, and a groove is reserved on the epitaxial layer;
the anode metal is connected with the first conductive pin, and the cathode metal is connected with the second conductive pin; the first conductive pins are provided with movable communication blocks and insulating grooves, the insulating grooves are symmetrically arranged at the vertical parts of the first conductive pins, expansion heat dissipation glue is coated in the insulating grooves close to the silicon carbide chips, one side, close to the silicon carbide chips, of each movable communication block is connected with the expansion heat dissipation glue, and the upper end and the lower end of each movable communication block are connected with the bending parts of the first conductive pins;
preferably, the top edge of the epitaxial layer is subjected to R angle treatment;
preferably, the silicon carbide substrate is an N-type silicon carbide substrate; the part of the anode metal embedded into the epitaxial layer is subjected to chamfering treatment;
preferably, the expansion heat dissipation glue has an expansion coefficient of 7.9x10 -4 Silicone rubber at a temperature of/DEGC;
preferably, the epitaxial layer is a composite layer composed of a polycrystalline silicon layer and an accelerating layer, and the position of the accelerating layer corresponds to the position of the part of the anode metal embedded into the epitaxial layer.
A silicon carbide diode method comprising the steps of:
s1, preparing a substrate: selecting a proper silicon carbide substrate as a substrate material to obtain an N-type silicon carbide substrate, wherein the doping concentration of the N-type silicon carbide substrate is 1e19/cm, the thickness of the N-type silicon carbide substrate is more than X and more than 1e18/cm, and the thickness of the N-type silicon carbide substrate is 120 mu m;
s2, growing a silicon carbide epitaxial layer on the upper surface of the N-type silicon carbide substrate;
s3, heating metal aluminum and nitrogen to a high temperature to evaporate the metal aluminum and the nitrogen into molecular beams, and enabling aluminum and nitrogen to form aluminum nitride by finely controlling the movement and deposition conditions of the beam, wherein the aluminum and the nitrogen are uniformly deposited on the left part and the right part of the silicon carbide epitaxial layer in S2, and the ratio of the aluminum to the nitrogen is 1:3, a step of;
s4, continuously growing a silicon carbide epitaxial layer on the silicon carbide epitaxial layer deposited by aluminum and nitrogen in S3, covering the aluminum and nitrogen deposited layer, continuously growing the silicon carbide epitaxial layer with the same thickness as that in S2 on the basis of the silicon carbide epitaxial layer in S2, and reserving the position of anode metal, namely a groove, to form a complete silicon carbide epitaxial layer;
s5, respectively coating insulating layers on the bottom, the top and the outer side of the silicon carbide epitaxial layer, wherein the thickness of the insulating layer on the top of the silicon carbide epitaxial layer is 2 times that of the insulating layer on the bottom and 3 times that of the insulating layer on the outer side;
s6, contact metal deposition: depositing a layer of metal in the trench on the silicon carbide epitaxial layer in S4 for making electrical contact with the silicon carbide so that it becomes embedded in the epitaxial layer; depositing cathode metal at the bottom of the N-type silicon carbide in S2;
s7, after the preparation of the silicon carbide chip is completed, the first conductive pin and the second conductive pin are respectively installed corresponding to anode metal and cathode metal;
s8, packaging, namely packaging by using epoxy resin or other sealing materials.
Advantageous effects
According to the silicon carbide diode, the accelerating layer is arranged in the silicon carbide chip, so that the band gap and the electron mobility of the epitaxial layer are changed, better electron transmission performance and lower resistance can be realized, the power and the efficiency of the device are improved, the condition that the device is easy to generate high temperature under high-power operation is reduced, and the problems that the temperature is increased due to heat accumulation and the power consumption of the silicon carbide diode is increased due to overhigh temperature are solved;
the invention also can temporarily cut off the current of the device through the expansion heat-dissipating glue and the movable communication block when the temperature of the device is too high, thereby preventing the device from being damaged by the too high temperature and protecting the device.
Drawings
FIG. 1 is a front view of a silicon carbide diode of the present invention;
FIG. 2 is a cross-sectional view of a silicon carbide diode of the present invention;
FIG. 3 is a cross-sectional view of A-A of FIG. 1;
fig. 4 is a cross-sectional view of a silicon carbide chip of the present invention.
1-a housing; a 2-silicon carbide chip; a 21-silicon carbide substrate; 22-an epitaxial layer; 221-a polysilicon layer; 222-acceleration layer; 23-cathode metal; 24-anode metal; 25-an insulating layer; 3-grooves; 4-a first conductive pin; 41-a movable communication block; 42-insulating grooves; 5-a second conductive pin; 6-expanding heat-dissipating glue.
Detailed Description
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is apparent that the embodiments described below are only some embodiments of the present invention, not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
As shown in fig. 1-4, a silicon carbide diode comprises a shell 1, wherein a silicon carbide chip 2 is arranged in the shell 1, the silicon carbide chip 2 comprises a silicon carbide substrate 21, an epitaxial layer 22, cathode metal 23, anode metal 24 and an insulating layer 25, the bottom of the silicon carbide substrate 21 is connected with the cathode metal 23, the top of the silicon carbide substrate 21 is connected with the epitaxial layer 22, the top of the epitaxial layer 22 is connected with the anode metal 24, an insulating layer 25 is arranged between the epitaxial layer 22 and the anode metal 24, a part of the anode metal 24 is embedded into the epitaxial layer 22, the insulating layer 25 is also arranged between the cathode metal 23 and the silicon carbide substrate 21, the insulating layer 25 surrounds the epitaxial layer 22, and a groove 3 is reserved on the epitaxial layer 22;
the anode metal 24 is connected with the first conductive pin 4, and the cathode metal 23 is connected with the second conductive pin 5; the first conductive pins 4 are provided with movable communication blocks 41 and insulating grooves 42, the insulating grooves 42 are symmetrically arranged at the vertical parts of the first conductive pins 4, the insulating grooves 42 close to the silicon carbide chip 2 are internally coated with expansion heat dissipation glue 6, one side of each movable communication block 41 close to the silicon carbide chip 2 is connected with the corresponding expansion heat dissipation glue 6, the expansion heat dissipation glue 6 fixed in each insulating groove 42 expands when the temperature of a device is too high, so that the movable communication blocks 41 are pushed towards the insulating grooves 42 on the other side, when the movable communication blocks 41 completely enter the insulating grooves 42 on the other side, the current communication function of the first conductive pins 4 is temporarily disabled due to current communication disconnection, so that the device is temporarily protected, when the temperature is reduced, the expansion heat dissipation glue 6 slowly returns to the original position, current is re-communicated, and the upper ends and the lower ends of the movable communication blocks 41 are connected with the bending parts of the first conductive pins 4;
preferably, the top edge of the epitaxial layer 22 is subjected to R-angle treatment, so that the electric field intensity at the position can be reduced, and the influence on the voltage resistance of the silicon carbide diode structure due to the excessively high local voltage of the formed schottky barrier is avoided;
preferably, the silicon carbide substrate 21 is an N-type silicon carbide substrate 21; the part of the anode metal 24 embedded into the epitaxial layer 22 is subjected to chamfering treatment, and the chamfering design can increase the effective area of the contact surface of the anode metal 24 and the epitaxial layer 22, so that the current transmission capacity of a junction interface is improved, the current density can be reduced, the thermal resistance of a conducting area is reduced, and the working current and the power capacity of the element are improved;
preferably, the expansion heat dissipation glue 6 has an expansion coefficient of 7.9x10 -4 The silicon rubber at the temperature of/DEG C improves the heat dissipation capacity of the silicon carbide chip 2, and meanwhile, enough expansion capacity can better play a role in pushing the movable communication block 41, and can timely expand and push away the movable communication block 41 when the temperature is too high, thereby playing a role in temporary disconnection;
preferably, the epitaxial layer 22 is a composite layer composed of a polysilicon layer 221 and an acceleration layer 222, the position of the acceleration layer 222 corresponds to the position of the anode metal 24 embedded in the epitaxial layer 22, and the acceleration layer 222 is additionally arranged in the epitaxial layer 22, so that the band gap and electron mobility of the epitaxial layer 22 can be changed, better electron transmission performance and lower resistance are realized, and the power and efficiency of the device are improved.
In this embodiment, the expansion force of the expansion heat dissipation glue 6 is utilized to push the movable connection block 41, so that the current can be temporarily disconnected, the device in a high temperature state is temporarily protected, meanwhile, in this embodiment, the acceleration layer 222 is arranged in the epitaxial layer 22, the current reaching the epitaxial layer 22 through the anode metal 24 can directly pass through the acceleration layer 222 and accelerate to flow to the cathode metal 23, the band gap and the electron mobility of the epitaxial layer 22 can be changed, better electron transmission performance and lower resistance are realized, the power and the efficiency of the device are improved, and the situation that the device is damaged at high temperature is prevented from multiple aspects.
Example 2
A silicon carbide diode method comprising the steps of:
s1, preparing a substrate: selecting a proper silicon carbide substrate as a substrate material to obtain an N-type silicon carbide substrate 21 with a doping concentration of 1e 19 /cm³＞X＞1e 18 A cm square, with a thickness of 120 μm;
s2, growing a silicon carbide epitaxial layer 22 on the upper surface of the N-type silicon carbide substrate;
s3, heating metal aluminum and nitrogen to a high temperature to evaporate the metal aluminum and the nitrogen into molecular beams, and enabling aluminum and nitrogen to form aluminum nitride by finely controlling the movement and deposition conditions of the beam, wherein the aluminum and the nitrogen are uniformly deposited on the left part and the right part of the silicon carbide epitaxial layer in S2, and the ratio of the aluminum to the nitrogen is 1:3, a step of;
in this step, aluminum and nitrogen elements can be used as seeds for crystal growth, and the introduction of these elements can provide more core growth points and facilitate the ordered growth of crystals. This can reduce the formation of crystal defects and improve the crystallinity and uniformity of the crystal.
S4, continuously growing a silicon carbide epitaxial layer 22 on the silicon carbide epitaxial layer 22 deposited by aluminum and nitrogen in S3, covering the aluminum and nitrogen deposited layer, continuously growing the silicon carbide epitaxial layer 22 with the same thickness as that in S2 on the basis of the silicon carbide epitaxial layer 22 in S2, and reserving the position of anode metal 24, namely a groove 3, so as to form a complete silicon carbide epitaxial layer 22;
s5, respectively coating an insulating layer 25 on the bottom, the top and the outer side of the silicon carbide epitaxial layer 22, wherein the thickness of the insulating layer 25 on the top of the silicon carbide epitaxial layer 22 is 2 times that of the insulating layer 25 on the bottom and 3 times that of the insulating layer 25 on the outer side;
in this step, when the thickness of the insulating layer 25 on the top is thicker, the current flow direction can be guided and the current can be stabilized, and the insulating layer 25 on the bottom is thinner, so that the influence on the current can be reduced.
S6, contact metal deposition: depositing a layer of metal in the trenches 3 on the epitaxial layer 22 of silicon carbide in S4 for making electrical contact with the silicon carbide so that it becomes embedded in the epitaxial layer 22; depositing cathode metal 23 at the bottom of the N-type silicon carbide in S2;
s7, after the preparation of the silicon carbide chip 2 is completed, the first conductive pin 4 and the second conductive pin are respectively installed corresponding to the anode metal 24 and the cathode metal 23;
s8, packaging, namely packaging by using epoxy resin or other sealing materials.
In this embodiment, the method for preparing the silicon carbide chip 2 is S1-S6, and the silicon carbide chip 2 prepared by the method has the advantages of high doping concentration, uniform deposition, high quality of the epitaxial layer 22, complete epitaxial layer 22 structure, optimized insulating layer 25 structure, metal electrical contact and the like, and can have better performance and reliability in high-power electronic devices.
Claims (9)
1. Silicon carbide diode, including shell (1), shell (1) embeds silicon carbide chip (2), its characterized in that: the silicon carbide chip (2) comprises a silicon carbide substrate (21), an epitaxial layer (22), cathode metal (23), anode metal (24) and an insulating layer (25), wherein the cathode metal (23) is connected to the bottom of the silicon carbide substrate (21), the epitaxial layer (22) is connected to the top of the silicon carbide substrate (21), the anode metal (24) is connected to the top of the epitaxial layer (22), the insulating layer (25) is arranged between the epitaxial layer (22) and the anode metal (24), a part of the anode metal (24) is embedded into the epitaxial layer (22), the insulating layer (25) is further arranged between the cathode metal (23) and the silicon carbide substrate (21), the insulating layer (25) surrounds the epitaxial layer (22), and a groove (3) is reserved on the epitaxial layer (22); the anode metal (24) is connected with the first conductive pin (4), and the cathode metal (23) is connected with the second conductive pin (5); the device is characterized in that a movable communication block (41) and an insulation groove (42) are arranged on the first conductive pin (4), the insulation groove (42) is symmetrically arranged at the vertical part of the first conductive pin (4), an expansion heat dissipation adhesive (6) is coated in the insulation groove (42) close to the silicon carbide chip (2), one side of the movable communication block (41) close to the silicon carbide chip (2) is connected with the expansion heat dissipation adhesive (6), the expansion heat dissipation adhesive (6) fixed in the insulation groove (42) expands when the temperature of the device is too high, so that the movable communication block (41) is pushed towards the direction of the insulation groove (42) on the other side, when the movable communication block (41) completely enters the insulation groove (42) on the other side, the current communication function of the first conductive pin (4) temporarily fails due to current communication disconnection, when the temperature drops, the expansion heat dissipation adhesive (6) slowly returns to the original position, and the upper end and the lower end of the movable communication block (41) are both connected with the first conductive pin (4) in a bending mode.
2. A silicon carbide diode according to claim 1 wherein: and R angle treatment is carried out on the top edge of the epitaxial layer (22).
3. A silicon carbide diode according to claim 1 wherein: the silicon carbide substrate (21) is an N-type silicon carbide substrate (21); the part of the anode metal (24) embedded in the epitaxial layer (22) is subjected to chamfering treatment.
4. A silicon carbide diode according to claim 1 wherein: the expansion heat dissipation glue (6) has an expansion coefficient of 7.9 x 10 -4 Silicone rubber at/deg.c.
5. A method of fabricating a silicon carbide diode according to claim 1, wherein: the method comprises the following steps:
s1, preparing a substrate: selecting a proper silicon carbide substrate as a substrate material to obtain an N-type silicon carbide substrate;
s2, growing a silicon carbide epitaxial layer on the upper surface of the N-type silicon carbide substrate;
s3, heating metal aluminum and nitrogen to high temperature to evaporate the metal aluminum and the nitrogen into molecular beams, and enabling aluminum and nitrogen to form aluminum nitride by finely controlling the movement and deposition conditions of the beam, so that the aluminum nitride and the nitrogen are uniformly deposited on the left part and the right part of the silicon carbide epitaxial layer in the S2;
s4, continuously growing a silicon carbide epitaxial layer on the silicon carbide epitaxial layer deposited by aluminum and nitrogen in S3, covering the aluminum and nitrogen deposited layer, continuously growing the silicon carbide epitaxial layer with the same thickness as that in S2 on the basis of the silicon carbide epitaxial layer in S2, and reserving the position of anode metal, namely a groove, to form a complete silicon carbide epitaxial layer;
s5, respectively coating insulating layers on the bottom, the top and the outer side of the silicon carbide epitaxial layer;
s6, contact metal deposition: depositing a layer of metal in the trench on the silicon carbide epitaxial layer in S4 for making electrical contact with the silicon carbide so that it becomes embedded in the epitaxial layer; depositing cathode metal at the bottom of the N-type silicon carbide in S2;
s7, after the preparation of the silicon carbide chip is completed, the first conductive pin and the second conductive pin are respectively installed corresponding to anode metal and cathode metal;
s8, packaging, namely packaging by using epoxy resin or other sealing materials.
6. A method of fabricating a silicon carbide diode according to claim 5, wherein: the doping concentration of the N-type silicon carbide substrate in the S2 is 1e19/cm, the thickness is more than X and more than 1e18/cm, and the thickness is 120 mu m.
7. A method of fabricating a silicon carbide diode according to claim 5, wherein: in the step S2, growing a silicon carbide epitaxial layer on the upper surface of the N-type silicon carbide substrate, wherein the thickness of the silicon carbide epitaxial layer is 1/2 of the original thickness of the complete silicon carbide epitaxial layer; and the thickness of the continuously grown silicon carbide epitaxial layer in the step S4 is 1/2 of the original thickness of the complete silicon carbide epitaxial layer.
8. A method of fabricating a silicon carbide diode according to claim 5, wherein: the ratio of aluminum to nitrogen in S3 is 1:3.
9. a method of fabricating a silicon carbide diode according to claim 5, wherein: and in the step S5, the thickness of the insulating layer at the top of the silicon carbide epitaxial layer is 2 times that of the insulating layer at the bottom and 3 times that of the insulating layer at the outer side.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311318893.XA CN117059670B (en) | 2023-10-12 | 2023-10-12 | Silicon carbide diode and manufacturing method thereof |
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| CN202311318893.XA CN117059670B (en) | 2023-10-12 | 2023-10-12 | Silicon carbide diode and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044737A (en) * | 1988-12-14 | 1990-08-15 | 克里研究公司 | Ultra-fast high temperature rectifying diode formed in silicon carbide |
| CN108198688A (en) * | 2017-12-31 | 2018-06-22 | 宁国市裕华电器有限公司 | One kind is vertically from cutting type explosion-proof type capacitor |
| CN110911368A (en) * | 2019-12-23 | 2020-03-24 | 杭州乐守科技有限公司 | Integrated circuit with automatic heat dissipation function |
| CN212461669U (en) * | 2020-07-09 | 2021-02-02 | 上海盟云全息科技股份有限公司 | Metal terminal structure for welding all-solid-state holographic shooting chip |
| CN113241339A (en) * | 2021-04-29 | 2021-08-10 | 东莞市佳骏电子科技有限公司 | High-power silicon carbide diode and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6856007B2 (en) * | 2001-08-28 | 2005-02-15 | Tessera, Inc. | High-frequency chip packages |
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- 2023-10-12 CN CN202311318893.XA patent/CN117059670B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044737A (en) * | 1988-12-14 | 1990-08-15 | 克里研究公司 | Ultra-fast high temperature rectifying diode formed in silicon carbide |
| CN108198688A (en) * | 2017-12-31 | 2018-06-22 | 宁国市裕华电器有限公司 | One kind is vertically from cutting type explosion-proof type capacitor |
| CN110911368A (en) * | 2019-12-23 | 2020-03-24 | 杭州乐守科技有限公司 | Integrated circuit with automatic heat dissipation function |
| CN212461669U (en) * | 2020-07-09 | 2021-02-02 | 上海盟云全息科技股份有限公司 | Metal terminal structure for welding all-solid-state holographic shooting chip |
| CN113241339A (en) * | 2021-04-29 | 2021-08-10 | 东莞市佳骏电子科技有限公司 | High-power silicon carbide diode and manufacturing method thereof |
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