CN117043943A - 采用电容器嵌入式再分布层（rdl）衬底将（多个）ic芯片接合到封装衬底的集成电路（ic）封装及相关方法 - Google Patents

采用电容器嵌入式再分布层（rdl）衬底将（多个）ic芯片接合到封装衬底的集成电路（ic）封装及相关方法 Download PDF

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Publication number
CN117043943A
CN117043943A CN202280022414.7A CN202280022414A CN117043943A CN 117043943 A CN117043943 A CN 117043943A CN 202280022414 A CN202280022414 A CN 202280022414A CN 117043943 A CN117043943 A CN 117043943A
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CN
China
Prior art keywords
rdl
substrate
package
layer
interconnects
Prior art date
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Pending
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CN202280022414.7A
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English (en)
Chinese (zh)
Inventor
J·崔
G·纳拉帕蒂
W·斯托内
J·许
金钟海
P·奇达姆巴拉姆
A·赛达
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Qualcomm Inc
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Qualcomm Inc
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Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN117043943A publication Critical patent/CN117043943A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/652—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/655—Fan-out layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
CN202280022414.7A 2021-04-22 2022-04-08 采用电容器嵌入式再分布层（rdl）衬底将（多个）ic芯片接合到封装衬底的集成电路（ic）封装及相关方法 Pending CN117043943A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/237,828 2021-04-22
US17/237,828 US12218041B2 (en) 2021-04-22 2021-04-22 Integrated circuit (IC) packages employing a capacitor-embedded, redistribution layer (RDL) substrate for interfacing an IC chip(s) to a package substrate, and related methods
PCT/US2022/071621 WO2022226465A1 (en) 2021-04-22 2022-04-08 Integrated circuit (ic) packages employing a capacitor-embedded, redistribution layer (rdl) substrate for interfacing an ic chip(s) to a package substrate, and related methods

Publications (1)

Publication Number Publication Date
CN117043943A true CN117043943A (zh) 2023-11-10

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CN202280022414.7A Pending CN117043943A (zh) 2021-04-22 2022-04-08 采用电容器嵌入式再分布层（rdl）衬底将（多个）ic芯片接合到封装衬底的集成电路（ic）封装及相关方法

Country Status (8)

Country Link
US (2) US12218041B2 (https=)
EP (1) EP4327361A1 (https=)
JP (1) JP2024514601A (https=)
KR (1) KR20240000470A (https=)
CN (1) CN117043943A (https=)
BR (1) BR112023021017A2 (https=)
TW (1) TW202247306A (https=)
WO (1) WO2022226465A1 (https=)

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US20240079352A1 (en) * 2022-09-02 2024-03-07 Qualcomm Incorporated Integrated circuit (ic) packages employing capacitor interposer substrate with aligned external interconnects, and related fabrication methods
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US20240145447A1 (en) * 2022-10-28 2024-05-02 Psemi Corporation Integration of Discrete Embeddable Capacitors on Integrated Circuit Chips
CN120727696B (zh) * 2025-09-01 2026-01-13 浙江大学 一种正交堆叠的双面冷却功率模块及其制备方法

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US8362599B2 (en) 2009-09-24 2013-01-29 Qualcomm Incorporated Forming radio frequency integrated circuits
JP5429019B2 (ja) 2010-04-16 2014-02-26 富士通株式会社 キャパシタ及びその製造方法
US8748284B2 (en) 2011-08-12 2014-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing decoupling MIM capacitor designs for interposers
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US9275955B2 (en) * 2013-12-18 2016-03-01 Intel Corporation Integrated circuit package with embedded bridge
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CN109314095B (zh) * 2017-04-10 2023-07-21 默升科技集团有限公司 笼式屏蔽中介层电感
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Publication number Publication date
WO2022226465A1 (en) 2022-10-27
US20220344250A1 (en) 2022-10-27
US20250118645A1 (en) 2025-04-10
JP2024514601A (ja) 2024-04-02
TW202247306A (zh) 2022-12-01
EP4327361A1 (en) 2024-02-28
KR20240000470A (ko) 2024-01-02
BR112023021017A2 (pt) 2023-12-19
US12218041B2 (en) 2025-02-04

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