CN117039451A - Broadband multi-polarization 1/2 bit reflective digital coding material unit - Google Patents
Broadband multi-polarization 1/2 bit reflective digital coding material unit Download PDFInfo
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- CN117039451A CN117039451A CN202311221573.2A CN202311221573A CN117039451A CN 117039451 A CN117039451 A CN 117039451A CN 202311221573 A CN202311221573 A CN 202311221573A CN 117039451 A CN117039451 A CN 117039451A
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- 239000000463 material Substances 0.000 title claims abstract description 36
- 230000004044 response Effects 0.000 claims abstract description 36
- 230000010287 polarization Effects 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims description 53
- 230000005284 excitation Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 4
- 230000009466 transformation Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000012986 modification Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 claims description 3
- 230000005405 multipole Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 3
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- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 3
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- 238000002474 experimental method Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
Abstract
The application discloses a broadband multi-polarization 1/2 bit reflective digital coding material unit, which can present different electromagnetic responses to incident electromagnetic waves with different polarizations by controlling the on-off state of a PIN diode loaded on a top patch of the unit. The 1-bit phase response is presented to a variety of linearly polarized incident wave energy, i.e., the reflected phases are approximately 180 degrees apart from each other due to the on-off state of the PIN diode. For the circularly polarized incident wave, the 2-bit phase response is presented, and by controlling the on-off state of the PIN diode, four circularly polarized wave reflection phases can be generated, and the adjacent states are different by 90 degrees. The application has simple structure, is easy to process and realize in engineering technology, can be combined with field programmable bias circuit hardware, can switch the state of the PIN diode in real time through preset information, and realizes the multifunctional application of the multi-polarization 1/2 bit digital coding metamaterial or the super surface.
Description
Technical Field
The application relates to the technical field of novel electromagnetic super-structure materials, in particular to a broadband multi-polarization 1/2 bit reflective digital coding material unit.
Background
The novel electromagnetic material is an artificial electromagnetic structure formed by periodically or non-periodically arranging sub-wavelength units, and can flexibly and effectively regulate and control the wave front phase, polarization mode, propagation and other characteristics of electromagnetic waves by regulating and controlling the wave front phase, amplitude and polarization of the electromagnetic waves, so that the novel electromagnetic material attracts the extensive attention of students in the past ten years. The group of teaching topics in 2014, cui Tiejun, presented the concept of "programmable supersurface" and verified the feasibility of the protocol by specific experiments.
The design of multi-bit digital programmable material cells is being widely studied, with the ability to have multiple electromagnetic phase responses on the same cell by integrating various active devices, such as varactors, PIN diodes, on the meta-material. More digital metamaterials have lower phase quantization errors and better electromagnetic wave control capability, and in 2-bit digital metamaterials, four-phase responses of 0, pi/2, pi and 3 pi/2 can be obtained. Currently Cui Tiejun teaches that the subject group designs a reconfigurable intelligent supersurface with 1/2/3 bit phasing based on varactors, which exhibit different capacitance values at different control voltages, so that the supersurface gets different phase responses at a given frequency point, but it cannot achieve more bits of phase response in a wider frequency band, or its multi-bit phase error in a wide band becomes large.
Disclosure of Invention
In view of the above, an object of the present application is to provide a broadband multi-polarization 1/2-bit reflective digital coding material unit, which has multiple polarization conversion capabilities, and exhibits 1-bit and 2-bit phase responses in a broadband for multiple linear polarization incident waves and circular polarization incident waves, respectively.
In order to achieve the above purpose, the application adopts the following technical scheme: a broadband multi-polarization 1/2 bit reflective digital coding material unit, wherein a control signal of the material unit is provided with direct current voltage by a programmable bias circuit, and two bias voltages of positive and negative directions can be provided for each PIN diode through a digital transformation module, so that the purpose of controlling reflective phase change is achieved.
In a preferred embodiment, the material units comprise, in order from top to bottom:
the first layer is composed of regular octagon metal patches (1) loaded with four PIN diodes, wherein the center positions of the regular octagon metal patches are connected with a third-layer metal ground plane (3) through metal blind holes (7), phase extension lines of the PIN diodes are respectively led out from the positions of four adjacent angles of the regular octagon metal patches (1), and the tail ends of the four phase extension lines are respectively connected with a fifth-layer metal layer (5) through metal through holes (6);
the second layer is a dielectric substrate layer (2);
the third layer is a metal layer (3) serving as a metal ground plane;
the fourth layer is a medium substrate layer (4);
the fifth layer is formed by four metal direct current bias lines, the four direct current bias lines are respectively connected with the tail end of a phase extension line of the first layer metal layer (1) through four metal through holes (6), and direct current voltages are respectively provided for the first PIN diode (8), the second PIN diode (9), the third PIN diode (10) and the fourth PIN diode (11), so that the on-off states of the four PIN diodes are independently controlled; the fan-shaped metal patch along the quarter wavelength on the four direct current bias lines is used for blocking the radio frequency signals from entering the direct current bias lines.
In a preferred embodiment, the material unit example operates at 12GHz with a period length of 12mm, the thickness of the second dielectric substrate layer (2) is 1.5mm, the dielectric constant is 2.55, and the loss tangent is 0.0015; the thickness of the fourth dielectric substrate layer (4) is 0.5mm, the dielectric constant is 4.4, and the loss tangent is 0.02; the material unit operates at other frequencies with corresponding modifications in unit dimensions.
In a preferred embodiment, the metal vias (6) at the ends of the phase extension lines of the material elements connect the first and fifth layers and are isolated from the third layer metal ground plane.
In a preferred embodiment, the PIN diode is turned on at a forward bias voltage; cut off at reverse bias voltage.
In a preferred embodiment, under the excitation of 22.5 DEG/112.5 DEG linear polarization incident wave, when only the PIN diode (8) or the PIN diode (10) is in a conducting state, the reflected wave of the material unit presents a 1-bit phase correspondence, 180 DEG phase difference is realized, the phase difference corresponds to a '0' state and a '1' state respectively, the phase error is controlled within a range of 20 DEG, and the reflection coefficient is more than 0.8;
under the excitation of the 22.5 DEG/112.5 DEG linear polarization incident wave, when only the PIN diode (9) or the PIN diode (11) is in a conducting state, the reflected wave of the material unit realizes 90 DEG orthogonal polarization conversion and presents 1 bit phase response; with the switching of the states of the two PIN diodes, a 180-degree phase difference is realized, the states of 0 and 1 are respectively corresponding, the phase error is controlled within a range of 10 degrees, and the reflection coefficient is more than 0.8;
according to the principle of reciprocity, the material unit can also achieve the above function under the excitation of a 67.5 DEG/157.5 DEG linearly polarized incident wave.
In a preferred embodiment, the unit exhibits a 1-bit phase response to the x/y polarized wave, when only the PIN diodes (8) and (9) are in the on state or only the PIN diode (10) and the PIN diode (11) are in the on state, the unit generates 90-degree orthogonal polarization conversion on the reflected wave under the incident excitation of the x/y polarized wave, the phase of the reflected wave changes along with the switching of the working states of the two PIN diodes, a 180-degree phase difference is realized, the phase error is controlled within a range of 10 degrees, and the reflection coefficient is larger than 0.8, and the phase error is controlled within a range of 10 degrees.
In a preferred embodiment, the material unit exhibits a 2-bit phase response to a circularly polarized incident electromagnetic wave, when excited by the circularly polarized incident wave, reflects the circularly polarized wave of the same polarization, and when only one of the four PIN diodes (8), (9), (10) and (11) is in an on state, the phase of the circularly polarized reflected electromagnetic wave is switched with the on-off state of the PIN diode sequentially changing, the reflection phase difference between adjacent states is 90 °, corresponding to the "00", "01", "10" and "00" states respectively, the phase error is controlled within a range of 10 °, and the reflection coefficient is greater than 0.8.
Compared with the prior art, the application has the following beneficial effects:
1. compared with the prior art, the application has the advantages that the reflection patch is of a regular octagon structure and can realize 1/2 bit electromagnetic phase response in a wider frequency band.
2. According to the application, a PIN diode is respectively loaded on four phase delay lines, so that multi-bit electromagnetic phase response can be realized on different polarized incident waves only by switching the voltage states of the PIN diode, 1-bit phase response can be realized on the polarized incident waves, and 2-bit phase response can be realized on the circularly polarized incident waves. Furthermore, the reflection patch can be designed into a round or regular polygon patch, and more phase extension lines are led out, so that phase response with higher bits is obtained, for example, (1) six phase extension lines with adjacent included angles of pi/6 are led out, and each phase delay line is respectively loaded with a PIN diode, so that the unit can realize phase response with 2.5 bits; (2) Eight phase extension lines with adjacent included angles of pi/8 are led out, a PIN diode is respectively loaded on each phase delay line, and the unit can realize 3-bit phase response; and by analogy, the number of the phase extension lines is increased, a PIN tube is respectively loaded on each phase extension line, and the phase response state of the unit can be increased.
3. The application has simple structure and is easy to process and realize. The 1/2 bit digital coding metamaterial unit works in a sub-millimeter wave frequency band, the processing of the unit structure can be completed by adopting a high-frequency dielectric plate and a conventional printed circuit board process, the PIN diode is welded on the surface of each unit, a direct-current voltage control signal is provided by an FPGA, and then a digital voltage transformation module provides forward bias voltage and reverse bias voltage for the PIN diode.
Drawings
FIG. 1 is a schematic diagram of the digitally encoded metamaterial unit provided in preferred embodiment 1 of the present application;
FIG. 2 is a top view of the digitally encoded metamaterial unit provided in preferred embodiment 1 of the present application;
FIG. 3 is a rear view of the digitally encoded metamaterial unit provided in preferred embodiment 1 of the present application;
FIG. 4 is a 1-bit state diagram of a digitally encoded metamaterial unit provided in a preferred embodiment 1 of the present application under 22.5/112.5 linearly polarized wave excitation and reflecting co-polarized electromagnetic waves; FIG. 4 (a) is a graph of reflection amplitude versus frequency; fig. 4 (b) is a graph of reflection phase versus frequency.
FIG. 5 is a 1-bit state diagram of a digitally encoded metamaterial unit provided in a preferred embodiment 1 of the present application under 22.5/112.5 linearly polarized wave excitation and reflecting orthogonal polarizations; FIG. 5 (a) is a graph of reflection amplitude versus frequency; fig. 5 (b) is a graph of reflection phase versus frequency.
FIG. 6 is a 1-bit state diagram of a digitally encoded metamaterial unit provided in a preferred embodiment 1 of the present application under excitation by an x/y polarized wave and reflecting the y/x polarized wave; FIG. 6 (a) is a graph of reflection amplitude versus frequency; fig. 6 (b) is a graph of reflection phase versus frequency.
FIG. 7 is a 2-bit state diagram of a digitally encoded metamaterial unit provided in a preferred embodiment 1 of the present application, with a single PIN diode on, incident as a circularly polarized wave and reflecting the same polarized circularly polarized wave; FIG. 7 (a) is a graph of reflection amplitude versus frequency; graph (b) is a plot of reflected phase versus frequency; fig. 7 (c) is an axial ratio graph.
Fig. 8 is a graph showing the phase response of a digitally encoded metamaterial unit provided in preferred embodiment 1 of the present application for different oblique angles of incidence at 13GHz when the digitally encoded metamaterial unit is incident as a circularly polarized wave and only a single PIN diode is operated.
Fig. 9 is a diagram of an N-bit cell structure based on the unit concept of embodiment 1 in the preferred embodiment of the present application, in which an incident wave is circularly polarized and a circularly polarized wave of the same polarization is reflected, and fig. 9 (a) can achieve a 2.5-bit phase response; fig. 9 (b) enables a 3-bit phase response; by analogy, as shown in fig. 9 (c), a higher bit phase response can be obtained by increasing the number of phase extension lines and PIN tubes.
Drawings
Regular octagon metal layer 1, dielectric substrate layer 2, metal ground plane 3, dielectric substrate layer 4, metal bias line layer 5, metal through-hole 6, metal blind hole 7, PIN diode 8, PIN diode 9, PIN diode 10, PIN diode 11.
Description of the embodiments
The application will be further described with reference to the accompanying drawings and examples.
It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present application; as used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
Examples
According to fig. 1-8, the present embodiment provides a broadband multi-polarization 1/2 bit reflective digital coding metamaterial (metamaterial) unit, wherein a control signal of the unit is provided with a direct current voltage by an FPGA, and two bias voltages opposite to each other can be provided for each PIN diode by a digital transformation module.
Specifically, in this embodiment, the unit structure includes, in order from top to bottom:
the first layer is composed of a regular octagon metal patch 1 loaded with four PIN diodes, wherein the center position of the regular octagon metal patch is connected with a third layer metal ground plane 3 through a metal blind hole 7, phase extension lines of the PIN diodes are respectively led out from the positions of four adjacent angles of the regular octagon metal patch 1, and the tail ends of the four phase extension lines are respectively connected with a fifth layer metal layer 5 through metal through holes 6;
the second layer is a medium substrate layer 2;
the third layer is a metal layer 3 which is used as a metal ground plane;
the fourth layer is a medium substrate layer 4;
the fifth layer is a metal layer 5 and is formed by four metal direct current bias lines, the four direct current bias lines are respectively connected with the tail end of a phase extension line of the first layer metal layer 1 through four metal through holes 6, and direct current voltages are respectively provided for the first PIN diode 8, the second PIN diode 9, the third PIN diode 10 and the fourth PIN diode 11, so that the on-off states of the four PIN diodes are independently controlled; the fan-shaped metal patch with quarter wavelength along the four direct current bias lines is used for blocking the influence of radio frequency signals.
Specifically, in this embodiment, the thickness of the second dielectric substrate layer 2 of the basic unit is 1.5mm, the dielectric constant is 2.55, and the loss tangent is 0.0015; the thickness of the fourth dielectric substrate layer 4 was 0.5mm, the dielectric constant was 4.4, and the loss tangent was 0.02.
Specifically, as shown in fig. 1 to 3, the dimensions of the basic units in this embodiment are as follows:
the unit period length is p=12 mm, the radius R of the octagonal metal patch 1 =3.5 mm, length and width of phase extension lines are L respectively 1 =1.12 mm and W 1 The position d=0.3 mm of the PIN diode from the octagonal patch, the radius and the included angle of the fan-shaped metal patch are respectively R 2 =3mm and θ 1 Distance L of fan-shaped metal patch to metal via 6 =60° 2 Width W of dc bias line =2.1 mm 2 =0.2mm。
In particular, in this embodiment, the metal vias 6 at the ends of the phase extension lines of the cells connect the first and fifth layers and are isolated from the third layer metal ground plane.
Specifically, in this embodiment, the PIN diode is turned on under the forward bias voltage, and may be equivalent to a resistance with a resistance value of 5.2 Ω; cut-off at reverse bias voltage can be equivalent to a capacitance of 18 fF.
Specifically, in the present embodiment, the oblique incident ray polarized electromagnetic wave exhibits a 1-bit phase response:
under the excitation of the 22.5 DEG/112.5 DEG linear polarization incident wave, when only the PIN diode 8 or 10 is in the conducting state, the unit reflected wave presents a 1-bit phase correspondence, and a 180 DEG phase difference is realized. The reflection amplitude and phase of the 1-bit state in this case are shown in fig. 4, the reflection efficiency is greater than 0.8 between 12.3GHz and 13.5GHz, and the phases of the two states can keep a phase difference of 180 ° with the frequency, respectively correspond to the "0" and "1" states, and the error is controlled within the range of 20 °, so that the working bandwidth of the digitally encoded metamaterial unit in this case is 12.3GHz to 13.5GHz.
Under excitation of a 22.5 °/112.5 ° linearly polarized incident wave, when only PIN diode 9 or 11 is in the on state, the reflected wave of the cell will achieve a 90 ° orthogonal polarization conversion and exhibit a 1-bit phase correspondence. With the switching of the states of the two PIN diodes, a 180-degree phase difference is realized. The reflection amplitude and phase of the 1-bit state in this case are as shown in fig. 5, the reflection efficiency is greater than 0.8 between 11.8GHz and 13.75GHz, and the phases of the two states can maintain a phase difference of almost 180 ° with frequency, respectively correspond to the "0" and "1" states, and the phase error is in the range of 10 °, so that the operating bandwidth of the digitally encoded metamaterial unit in this case is 11.8GHz to 13.75GHz.
According to the principle of reciprocity, the cell also achieves the above function under excitation of a 67.5 °/157.5 ° linearly polarized incident wave.
Specifically, in this embodiment, the unit exhibits a 1-bit phase response to an x/y polarized incident electromagnetic wave, when only PIN diodes 8 and 9 are in on state or only 10 and 11 are in on state, the unit generates 90 ° orthogonal polarization conversion of the reflected wave under the excitation of the x/y polarized wave, and the phase of the reflected wave changes with the switching of the two PIN diode operation states, so that a 180 ° phase difference is achieved. The reflection amplitude and phase of the 1-bit state in this case are as shown in fig. 6, the reflection efficiency is greater than 0.8 between 12.2GHz and 13.3GHz, and the phases of the two states can maintain a phase difference of almost 180 ° with frequency, respectively correspond to the "0" and "1" states, and the phase error is in the range of 10 °, so that the operating bandwidth of the digitally encoded metamaterial unit in this case is 12.2GHz to 13.3GHz.
Specifically, in this embodiment, the unit exhibits a 2-bit phase response to the circularly polarized incident electromagnetic wave, and when the circularly polarized electromagnetic wave is incident, only one of the four PIN diodes is in the on state, the phase of the circularly polarized reflected electromagnetic wave is switched according to the operation state of the diode. The reflection amplitude and the phase of the 2-bit state in the case are shown in fig. 7, the reflection efficiency is greater than 0.8 between 11.8GHz and 13.75GHz, the phase of the adjacent state can basically keep 90 DEG phase difference along with the frequency, the states of '00', '01', '10' and '00' are respectively corresponding, and the phase error is controlled within the range of 10 DEG; and the axial ratio at 12.4GHz to 13.3GHz is less than 3dB, the digitally encoded metamaterial unit has an operating bandwidth of 12.4GHz to 13.3GHz in this case.
Fig. 8 shows the phase response of the digitally encoded metamaterial unit at different oblique angles of incidence at 13GHz in a 2-bit electromagnetic response state when excited with circularly polarized incident waves and only a single PIN diode is operated in this embodiment. When the oblique incidence angle is changed within the range of 0-50 degrees, the adjacent phase states can still stably keep the phase difference of 90 degrees, and the 2-bit response is good.
Fig. 9 is a cell structure for obtaining a higher bit phase response by designing the reflection patch to be circular and by increasing the number of phase extension lines based on the cell concept technology of embodiment 1. With circularly polarized incident waves and reflected co-polarized circularly polarized waves, fig. 9 (a) can achieve 2.5 bit (six phases spaced 60 °) phase response; fig. 9 (b) enables a 3-bit phase response; by analogy, as shown in fig. 9 (c), a higher bit phase response can be obtained by increasing the number of phase extension lines and PIN tubes. It is noted that the circular patch can be replaced by a regular polygon patch, and the fan-shaped structure on the back of the unit can be replaced by an inductor, so that the influence of the radio frequency signal on the direct current bias circuit can be isolated.
In summary, the present application provides a 1/2 bit reflective digitally encoded metamaterial unit capable of being implemented over a wide frequency band, while having multiple polarization conversion capabilities. Loading a PIN diode on a phase delay line of a unit, and controlling the on-off state of the PIN diode to realize 0-180 DEG phase change of linear polarization incident wave; the phase change of 0-270 degrees can be realized for circularly polarized incident waves, and the phase requirement of a 1/2 bit digital coding super-surface can be met.
The foregoing has described in detail preferred embodiments of the present application. It is important to note that many modifications and variations are possible in light of the inventive idea without inventive effort for a person skilled in the art. Therefore, any solution obtained by logic analysis, reasoning or limited experiments based on the prior art, which is conceived by a person skilled in the art, is within the scope of protection as defined by the claims.
Claims (8)
1. A broadband multi-polarization 1/2 bit reflective digital coding material unit is characterized in that a control signal of the material unit is provided with direct current voltage by a programmable bias circuit, and two bias voltages with positive and negative directions can be provided for each PIN diode through a digital transformation module, so that the purpose of controlling reflective phase change is achieved.
2. A broadband multi-polarization 1/2 bit reflective digitally encoded material element according to claim 1, comprising, in order from top to bottom:
the first layer is composed of regular octagon metal patches (1) loaded with four PIN diodes, wherein the center positions of the regular octagon metal patches are connected with a third-layer metal ground plane (3) through metal blind holes (7), phase extension lines of the PIN diodes are respectively led out from the positions of four adjacent angles of the regular octagon metal patches (1), and the tail ends of the four phase extension lines are respectively connected with a fifth-layer metal layer (5) through metal through holes (6);
the second layer is a dielectric substrate layer (2);
the third layer is a metal layer (3) serving as a metal ground plane;
the fourth layer is a medium substrate layer (4);
the fifth layer is formed by four metal direct current bias lines, the four direct current bias lines are respectively connected with the tail end of a phase extension line of the first layer metal layer (1) through four metal through holes (6), and direct current voltages are respectively provided for the first PIN diode (8), the second PIN diode (9), the third PIN diode (10) and the fourth PIN diode (11), so that the on-off states of the four PIN diodes are independently controlled; the fan-shaped metal patch along the quarter wavelength on the four direct current bias lines is used for blocking the radio frequency signals from entering the direct current bias lines.
3. A broadband multi-polarization 1/2 bit reflective digitally encoded material element according to claim 2, characterized in that said material element example operates at 12GHz with a period length of 12mm, a thickness of the second dielectric substrate layer (2) of 1.5mm, a dielectric constant of 2.55, and a loss tangent of 0.0015; the thickness of the fourth dielectric substrate layer (4) is 0.5mm, the dielectric constant is 4.4, and the loss tangent is 0.02; the material unit operates at other frequencies with corresponding modifications in unit dimensions.
4. A broadband multipole 1/2-bit reflective digitally encoded material element according to claim 2, characterized in that the metallic via (6) at the end of the phase extension of said material element connects the first and fifth layers and is isolated from the third layer metallic ground plane.
5. A broadband multi-polarization 1/2 bit reflective digitally encoded material cell according to claim 2, wherein said PIN diode is turned on at a forward bias voltage; cut off at reverse bias voltage.
6. A broadband multi-polarization 1/2 bit reflective digitally encoded material cell according to claim 2, wherein:
under the excitation of a 22.5 degrees/112.5 degrees linear polarization incident wave, when only a PIN diode (8) or a PIN diode (10) is in a conducting state, the reflected wave of the material unit presents a 1-bit phase correspondence, 180-degree phase difference is realized, the states of 0 and 1 are respectively corresponding, the phase error is controlled within a range of 20 degrees, and the reflection coefficient is larger than 0.8;
under the excitation of the 22.5 DEG/112.5 DEG linear polarization incident wave, when only the PIN diode (9) or the PIN diode (11) is in a conducting state, the reflected wave of the material unit realizes 90 DEG orthogonal polarization conversion and presents 1 bit phase response; with the switching of the states of the two PIN diodes, a 180-degree phase difference is realized, the states of 0 and 1 are respectively corresponding, the phase error is controlled within a range of 10 degrees, and the reflection coefficient is more than 0.8;
according to the principle of reciprocity, the material unit can also achieve the above function under the excitation of a 67.5 DEG/157.5 DEG linearly polarized incident wave.
7. A broadband multi-polarization 1/2-bit reflective digital coding material unit according to claim 2, characterized in that the unit exhibits a 1-bit phase response to x/y polarized waves, when only PIN diodes (8) and (9) are in on state or only PIN diode (10) and PIN diode (11) are in on state, the unit generates 90 ° orthogonal polarization conversion of reflected waves under the incident excitation of x/y polarized waves, and the phase of reflected waves changes with the switching of the two PIN diode operation states, realizing 180 ° phase difference corresponding to the "0" and "1" states respectively, the phase error is controlled within 10 ° range, and the reflection coefficient is greater than 0.8.
8. The broadband multi-polarization 1/2-bit reflective digital coding material unit according to claim 2, wherein the material unit exhibits a 2-bit phase response to a circularly polarized incident electromagnetic wave, when excited by the circularly polarized incident wave, reflects the circularly polarized wave of the same polarization, and when only one of the four PIN diodes (8), (9), (10) and (11) is in an on state, the phase of the circularly polarized reflected electromagnetic wave is switched with the on-off state of the PIN diode sequentially changing, the reflection phase difference between adjacent states is 90 °, corresponding to the "00", "01", "10" and "00" states, respectively, the phase error is controlled within the range of 10 °, and the reflection coefficient is greater than 0.8.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117458160A (en) * | 2023-12-22 | 2024-01-26 | 江苏赛博空间科学技术有限公司 | Broadband dual-polarized 1bit metamaterial unit structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117458160A (en) * | 2023-12-22 | 2024-01-26 | 江苏赛博空间科学技术有限公司 | Broadband dual-polarized 1bit metamaterial unit structure |
| CN117458160B (en) * | 2023-12-22 | 2024-04-05 | 江苏赛博空间科学技术有限公司 | Broadband dual-polarized 1bit metamaterial unit structure |
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