CN109728426A - A kind of restructural broadband multipolarization reflective array unit of 1 bit - Google Patents
A kind of restructural broadband multipolarization reflective array unit of 1 bit Download PDFInfo
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- CN109728426A CN109728426A CN201811617374.2A CN201811617374A CN109728426A CN 109728426 A CN109728426 A CN 109728426A CN 201811617374 A CN201811617374 A CN 201811617374A CN 109728426 A CN109728426 A CN 109728426A
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Abstract
The present invention provides a kind of restructural broadband multipolarization reflective array units of bit, including top layer metallic layer, metallic intermediate layer layer, bottom metal layer, metallization VIA, upper dielectric-slab, lower dielectric-slab；Top layer metallic layer is set to dielectric-slab upper bottom surface, four sizes identical round feed end is set on top layer metallic layer, metallic intermediate layer layer is set between upper and lower dielectric-slab, bottom metal layer is set to lower dielectric-slab bottom surface, and metallization VIA is arranged four and is each passed through metallic intermediate layer layer and upper and lower dielectric-slab is connect with feed end and bottom metal layer；The metal patch connecting with metallization VIA is set on bottom metal layer, and each metal patch extends isometric metal micro-strip line to adjacent metal via hole, a switching diode is connected between the metal micro-strip line of adjacent metal via hole.
Description
Technical field
The present invention relates to artificial electromagnetic medium and reflectarray antenna technology, a kind of especially restructural broadband of 1 bit is more
Polarize reflective array unit.
Background technique
Reflectarray antenna is just obtaining increasing concern due to their low cost, high-gain and advantages easy to process
Degree.Since reflectarray antenna generallys use space electricity-feeding technology, without designing complicated power distributing network, so that it
Be easier to for realizing large aperture antenna.And restructural reflectarray antenna then can be by collecting in each array element
Dynamic beam figuration is realized at adjustable microwave component, to become a kind of feasible alternative of complicated phased array antenna.
So far, it has been proposed that multinomial technology designs restructural reflective array, such as adjustable microwave impedance meter
Face, ferroelectric ceramics base reflective array, and carry the micro-strip paster antenna of switching diode.It is capable of providing continuously compared to other
The analog reflective array of phase change, the reflective array unit with 1 digital bit phase shifter function proposed by the present invention are adopted
With simple DC control system, and cost is relatively low, thus be more suitable using and heavy caliber reflectarray antenna design.
On the other hand, existing automatically controlled reflective array design, it is either digital or analog, there is narrow bandwidth and polarization is flexible
The lower problem of property.
Digital Meta Materials are a kind of novel artificial electromagnetic medias by academia and industry extensive concern in recent years
(Metamaterials), this artificial material is by by digital circuit component including such as switching diode etc. and artificial single
Member combines, and realizes the flexible control to electromagnetic wave, and it is fixed scarce once preparation i.e. function to breach traditional artificial electromagnetic media
The defect of weary flexibility, and there is the ability for directly converting digital information and external electromagnetic field, it eliminates traditional AD/DA and turns
The microwave components such as block are changed the mold, the prospect with wide application.
Summary of the invention
The purpose of the present invention is to provide a kind of restructural broadband multipolarization reflective array units of 1 bit, realize dynamic wave
The broadband multipolarization reflectarray antenna of beam figuration.
Realize the technical solution of above-mentioned purpose are as follows: a kind of restructural broadband multipolarization reflective array unit of bit, including top
Layer metal layer, metallic intermediate layer layer, bottom metal layer, metallization VIA, upper dielectric-slab, lower dielectric-slab；Top layer metallic layer setting
In the identical round feed end of four sizes is arranged on upper dielectric-slab upper bottom surface, top layer metallic layer, metallic intermediate layer layer is set to
Between upper and lower dielectric-slab, bottom metal layer is set to lower dielectric-slab bottom surface, during metallization VIA is arranged four and is each passed through
Interbed metal layer and upper and lower dielectric-slab are connect with feed end and bottom metal layer；Setting and metallization VIA on bottom metal layer
The metal patch of connection, each metal patch extend isometric metal micro-strip line, adjacent metal mistake to adjacent metal via hole
A switching diode is connected between the metal micro-strip line in hole.
Said units are used, if switching diode is followed successively by first switch diode, second switch diode, third switch
Diode, the 4th switching diode；When first switch diode, the conducting of third switching diode, second switch diode, the 4th
When switching diode ends, the reflected phase of unit is 0 °, corresponding " 0 " state；When Switch Second Switch diode, the 4th switch
Diode current flow, when first switch diode, third switching diode end, the reflected phase of cellular construction is 80 °, corresponding
One state.
Compared with prior art, the present invention having the advantage that (1) unit using multipolarization feeding classification, can reflect
The electromagnetic wave different from incident polarization direction realizes the reflectarray antenna of broadband multipolarization.And only by control switch two
Pole pipe can form " 0 " and " 1 " two kinds of reflected phases, realize the function of digital phase shifter, can become heavy caliber phased array day
A kind of alternative of line, there is important prospect in military and commercial applications；(2) present invention uses simple DC control system
System is controlled, and cost is relatively low；(3) production of the invention is simple, easy to process, is processed with mounting technology just using mature PCB
It can complete to processing of the invention.
The invention will be further described with reference to the accompanying drawings of the specification.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the restructural broadband multipolarization reflective array unit of 1 bit, including side view and three layers of gold
Belong to the plan view of structure, wherein (a) is the top view of cellular construction, includes top-level metallic structure and metallization VIA, (b) be
Metallic intermediate layer structural plan figure, (c) be cellular construction bottom view, include underlying metal structure and metallization VIA,
In have metal patch V1, V2, V3, V4, switching diode D1, D2, D3, D4.
Fig. 2 is the reflecting effect schematic diagram of the reflective array that is made of reflective array unit to linear polarization incidence wave.
Fig. 3 is switch D1 and D3 conducting, when switch D2 and D4 cut-off, the reflective array that is made of the reflective array unit
In the case where the direction x linear polarization is incident, co-polarization reflection coefficient SxxWith cross polarization reflection coefficient SxyAmplitude with frequency variation.
Fig. 4 is the 1 bit reflected phase schematic diagram generated by switching switch state, including 0 ° and 180 ° of two kinds of phase shapes
State.
Fig. 5 is reflection coefficient width of the reflective array to linear polarization incidence wave under 30 ° of oblique incidences and under 0 ° of normal incidence respectively
Spend the variation schematic diagram with frequency.
Fig. 6 be respectively under 30 ° of oblique incidences and under 0 ° of normal incidence reflective array to the reflected phase of linear polarization incidence wave with
The variation schematic diagram of frequency.
Fig. 7 is the reflecting effect schematic diagram of the reflective array that is made of reflective array unit to circular polarisation incidence wave.
Fig. 8 is switch D1 and D3 conducting, when switch D2 and D4 cut-off, the reflective array that is made of the reflective array unit
In the case where left-hand circular polarization is incident, co-polarization reflection coefficient SLLWith cross polarization reflection coefficient SLRAmplitude is illustrated with the variation of frequency
Figure.
Specific embodiment
The restructural broadband multipolarization reflective array unit of 1 bit of one kind of the invention, the design based on digital Meta Materials are thought
Think, can be by the electromagnetic wave of incident polarity electromagnetic wave reflection difference polarization mode using dual polarization feeding classification, other unit bottom
Portion's metal structure is integrated with four switching diodes and provides 1 by the working condition of DC control circuit control switch diode
The phase reconfigurable function of bit.
Fig. 1 gives the pictorial diagram of unit, the plan view including whole side view and 3 layers of structured metal layer.Including top
Layer metal layer 1, metallic intermediate layer layer 2, bottom metal layer 3, metallization VIA 4, upper dielectric-slab, lower dielectric-slab.Top layer metallic layer 1
It is set to dielectric-slab upper bottom surface, the identical round feed end 11 of four sizes of setting, metallic intermediate layer layer on top layer metallic layer 1
2 are set between upper and lower dielectric-slab, and bottom metal layer 3 is set to lower dielectric-slab bottom surface, metallization VIA 4 be arranged four and
It is each passed through metallic intermediate layer layer 2 and upper and lower dielectric-slab is connect with feed end 11 and bottom metal layer 3；It is set on bottom metal layer 3
Set the metal patch connecting with metallization VIA 31, it is micro- that each metal patch to adjacent metal via hole 31 extends isometric metal
With line, a switching diode is connected between the metal micro-strip line of adjacent metal via hole 31.It is metallizing on metallic intermediate layer layer 2
Physics area of isolation is arranged in 21 surrounding of via hole.
Fig. 2 gives reflection schematic diagram of the reflective array to linear polarization incidence of the unit composition.It is the side x in incidence wave
To under linear polarization mode, back wave has the linear polarization in the direction x and two kinds of reflective-modes of linear polarization in the direction y, and wherein co-polarization is anti-
Penetrate coefficient SxxCharacterize the linear polarization reflected wave powers in the direction x and the ratio of incident power, cross polarization reflection coefficient SxyCharacterization
The linear polarization reflected wave powers in the direction y and the ratio of incident power.
Fig. 3 gives switch D1 and D3 conducting, when switch D2 and D4 end, under the direction x linear polarization is incident, and x direction line pole
Change reflection coefficient SxxWith the direction y linear polarization reflection coefficient SxyAmplitude variation.As seen from Figure 3, the 1- of the reflective array
DB polarization conversion bandwidth covers 5.27GHz to 6.27GHz, and relative bandwidth has been more than 17%.In this frequency range, the direction x
The cross polarization mode that the electromagnetic wave of linear polarization incidence is efficiently reflected as it.
Fig. 4 gives by switching switch state, 1 bit reflected phase of generation, including 0 ° and 180 ° of two kinds of phase shapes
State.When switch D1, D3 are connected, and switch D2, D4 end, the reflected phase of cellular construction is 0 °, corresponding " 0 " state；Work as switch
D2, D4 conducting, when switch D1, D3 end, the reflected phase of cellular construction is 180 °, corresponding one state.From fig. 4 it can be seen that
In the frequency range of 5.27GHz to 6.27GHz, two kinds of reflected phase pattern formations, 180 ° of phase differences.
The concrete operating principle of Fig. 3 Fig. 4 are as follows: when direction of an electric field be the direction x electromagnetic wave incident arrive cellular construction when, incidence
Electromagnetic wave is received by paster antenna, and is transferred to bottom metal layers by metallization VIA V1 and V3.When switch D1 and D3 be connected,
When switch D2 and D4 end, V4 and V2 will be correspondingly transferred in the energy that V1 and V3 are received.Meanwhile received energy
Amount will be radiated again by direction of an electric field along the paster antenna in the direction y.Therefore the linear polarization incidence wave in the direction x can be reflected into y
The linear polarization back wave in direction.Due to the symmetry of structure, then the linear polarization incidence wave in the direction y can be reflected into the line in the direction x
Polarize back wave.In addition, the energy due to via hole V1 can be transferred to V2 and V4, and the position of V2 and V4 by the control of switch
The contrary in physical space, therefore " 0 " and " 1 " two kinds of reflective conditions will form 180 ° of phase differences.
Fig. 5 and Fig. 6 gives under 30 ° of oblique incidences the reflective array to the reflectance magnitude and phase of linear polarization incidence wave
Position and is compared with the variation of frequency with 0 ° of normal incidence.It can be seen that the reflective array is in 30 ° of oblique incidences and 0 ° of normal incidence
It is lower with very similar corresponding.It can be seen that, in 1-dB bandwidth of operation, the phase change under incidence angles degree is small simultaneously
In 10 °.The above results demonstrate the feasibility that the reflective array uses space electricity-feeding scheme.
Fig. 7 gives switch D1 and D3 conducting, (corresponding " 0 " state), left-hand circular polarization when switch D2 and D4 end
(LHCP) under incident, right-handed circular polarization (RHCP) reflection coefficient SLRWith left-hand circular polarization (LHCP) reflection coefficient SLLAmplitude become
Change.As seen from Figure 8, in 5.27GHz to 6.27GHz frequency range, the reflective array is by incident circular polarisation electromagnetic wave
It is effectively reflected into the circular polarisation electromagnetic wave of same polarization mode, it is just opposite with the reflection characteristic of metal plate.In addition, passing through control
The conducting of switching diode is equally also able to achieve the 1 bit phase reconfigurable function similar with linear polarization.
Claims (4)
1. a kind of restructural broadband multipolarization reflective array unit of 1 bit, which is characterized in that including top layer metallic layer (1), centre
Layer metal layer (2), bottom metal layer (3), metallization VIA (4), upper dielectric-slab, lower dielectric-slab；Wherein
Top layer metallic layer (1) is set to dielectric-slab upper bottom surface,
Four sizes identical round feed end (11) is set on top layer metallic layer (1),
Metallic intermediate layer layer (2) is set between upper and lower dielectric-slab,
Bottom metal layer (3) is set to lower dielectric-slab bottom surface,
Metallization VIA (4) be arranged four and be each passed through metallic intermediate layer layer (2) and upper and lower dielectric-slab and feed end (11) and
Bottom metal layer (3) connection；
The metal patch connecting with metallization VIA (31) is set on bottom metal layer (3),
Each metal patch extends isometric metal micro-strip line to adjacent metal via hole (31),
A switching diode is connected between the metal micro-strip line of adjacent metal via hole (31).
2. unit according to claim 1, which is characterized in that in metallization VIA (21) week on metallic intermediate layer layer (2)
Enclose setting physics area of isolation.
3. unit according to claim 1, which is characterized in that set switching diode and be followed successively by first switch diode
(D1), second switch diode (D2), third switching diode (D3), the 4th switching diode (D4), wherein
When first switch diode (D1), third switching diode (D3) conducting, second switch diode (D2), the 4th switch two
When pole pipe (D4) is ended, the reflected phase of unit is 0 °, corresponding " 0 " state；
When Switch Second Switch diode (D2), the 4th switching diode (D4) are connected, first switch diode (D1), third are opened
When closing diode (D3) cut-off, the reflected phase of cellular construction is 180 °, corresponding one state.
4. unit according to claim 1 or 3, which is characterized in that in the case where incidence wave is x direction line polarization mode, reflection
Wave has the linear polarization in the direction x and two kinds of reflective-modes of linear polarization in the direction y, wherein co-polarization reflection coefficient SxxCharacterize the direction x
The ratio of linear polarization reflected wave powers and incident power, cross polarization reflection coefficient SxyCharacterize the linear polarization back wave in the direction y
The ratio of power and incident power.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110854544A (en) * | 2019-11-29 | 2020-02-28 | 电子科技大学 | Low-RCS phased-array antenna and RCS reduction method |
| CN111987469A (en) * | 2020-07-24 | 2020-11-24 | 东南大学 | Reflection super surface and antenna of two linear polarization independent control |
| CN112949032A (en) * | 2021-01-27 | 2021-06-11 | 中国传媒大学 | Design method of full-polarization reconfigurable planar reflective array antenna technology |
| CN113629389A (en) * | 2021-08-18 | 2021-11-09 | 北京星英联微波科技有限责任公司 | 1-bit phase reconfigurable polarization-variable all-metal reflective array antenna unit |
| CN113690618A (en) * | 2021-08-05 | 2021-11-23 | 北京行晟科技有限公司 | Full-polarization phase control electromagnetic surface unit |
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| US20140333503A1 (en) * | 2013-05-07 | 2014-11-13 | Electronics And Telecommunications Research Institute | Reflectarray antenna for wireless telecommunication and structure thereof |
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| CN106025561A (en) * | 2016-06-28 | 2016-10-12 | 西安电子科技大学 | One-bit digital coding microstrip reflect array antenna |
| CN107658569A (en) * | 2017-09-06 | 2018-02-02 | 北京大学 | A kind of digital artificial electromagnetic super surface of 2 bit programmable |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854544A (en) * | 2019-11-29 | 2020-02-28 | 电子科技大学 | Low-RCS phased-array antenna and RCS reduction method |
| CN111987469A (en) * | 2020-07-24 | 2020-11-24 | 东南大学 | Reflection super surface and antenna of two linear polarization independent control |
| CN112949032A (en) * | 2021-01-27 | 2021-06-11 | 中国传媒大学 | Design method of full-polarization reconfigurable planar reflective array antenna technology |
| CN113690618A (en) * | 2021-08-05 | 2021-11-23 | 北京行晟科技有限公司 | Full-polarization phase control electromagnetic surface unit |
| CN113629389A (en) * | 2021-08-18 | 2021-11-09 | 北京星英联微波科技有限责任公司 | 1-bit phase reconfigurable polarization-variable all-metal reflective array antenna unit |
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Application publication date: 20190507 |