CN117012726A - Gallium nitride half-bridge module - Google Patents
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- CN117012726A CN117012726A CN202311053020.0A CN202311053020A CN117012726A CN 117012726 A CN117012726 A CN 117012726A CN 202311053020 A CN202311053020 A CN 202311053020A CN 117012726 A CN117012726 A CN 117012726A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 164
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 163
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000011889 copper foil Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 238000004382 potting Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 12
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a gallium nitride half-bridge module, which comprises a packaging body (100), wherein the inside of the packaging body is provided with: the surface of the copper-clad ceramic substrate (2) is etched with a first base region (4), a second base region (5) and a connecting circuit (6), and the first base region (4) and the second base region (5) are respectively provided with a first half-bridge circuit unit and a second half-bridge circuit unit; a laminated substrate (11) disposed above the connection wiring (6) for interconnecting the connection wiring (6) and the first base region (4) and the second base region (5); and a lead frame (1) interconnected with the copper-clad ceramic substrate (2), wherein a plurality of terminals (3) are provided on the lead frame (1). The gallium nitride half-bridge module improves the utilization rate of the internal space and reduces the external dimension of the package by reasonably designing the layout structure of the gallium nitride chip in the package, thereby reducing the occupied area on the printed circuit board, rapidly reducing the parasitic parameters and the generation of peak voltage and further improving the system performance and the product reliability.
Description
Technical Field
The invention relates to the technical field of gallium nitride, in particular to a gallium nitride half-bridge module.
Background
The semiconductor industry is a strategic and fundamental industry for national economy and social development, and is the core and foundation of the electronic information industry. The third-generation semiconductor is a wide forbidden band semiconductor material mainly comprising silicon carbide SiC and gallium nitride GaN, has the advantages of high frequency, high efficiency, high power, high pressure resistance, high temperature resistance, strong radiation resistance and the like, and is a key core material and electronic components for supporting autonomous innovation development and transformation upgrading of industries such as new-generation mobile communication, new energy automobiles, high-speed rail trains, energy Internet and the like.
In recent years, the fields of electric automobiles, high-speed rails and aerospace are continuously developed, the requirements for power device modules to work at high frequency, high temperature and high pressure are continuously increased, the traditional silicon-based power device modules almost reach the material performance limit of the traditional silicon-based power device modules, gallium nitride (GaN) has the advantages of high temperature resistance, high pressure resistance and high switching rate as a third-generation wide-forbidden-band semiconductor material, the packaging technology is gradually an important industry, and however, the packaging technology brings challenges for fully playing the advantages of the gallium nitride material.
The switching speed of the gallium nitride device is extremely high, if the traditional wire bonding packaging type is used, larger packaging stray inductance is brought, and then the problems of remarkable switching loss, voltage overshoot and the like are generated, so that the high-frequency application requirement of the gallium nitride device cannot be met. Considering the drawbacks of the conventional packaging form, a packaging device capable of fully playing the advantages of gallium nitride materials is urgently needed, and the problems of switching loss, voltage overshoot, heat dissipation and the like can be thoroughly solved.
Disclosure of Invention
The invention aims at the defects in the prior art and provides the gallium nitride half-bridge module which can fully play the advantages of the gallium nitride material to thoroughly solve the problems of switching loss, voltage overshoot, heat dissipation and the like.
The technical scheme adopted for solving the technical problems is as follows: a gallium nitride half-bridge module is constructed, comprising a package body, wherein the package body is provided with:
a copper-clad ceramic substrate with a first base region, a second base region and a connecting circuit etched on the surface; a first half-bridge circuit unit formed by interconnection of a first group of gallium nitride chips is arranged in the first base region, and a second half-bridge circuit unit formed by interconnection of a second group of gallium nitride chips is arranged in the second base region;
a laminated substrate disposed over the connection line for interconnecting the connection line with the first base region and the second base region;
and the lead frame is interconnected with the copper-clad ceramic substrate, a plurality of terminals are arranged on the lead frame, and the free ends of the terminals extend out of the packaging body to form electric connection pins.
In the gallium nitride half-bridge module, the first group of gallium nitride chips comprises a gallium nitride chip A and a gallium nitride chip B, wherein the gallium nitride chip A is arranged at the upper position of the first base region, the gallium nitride chip B is arranged at the lower position of the first base region, and the gallium nitride chip A and the gallium nitride chip B are mutually parallel;
the second group of gallium nitride chips comprises gallium nitride chips C and gallium nitride chips D, wherein the gallium nitride chips C are arranged at the upper position of the second base region, the gallium nitride chips D are arranged at the lower position of the second base region, and the gallium nitride chips C are parallel to the gallium nitride chips D.
In the gallium nitride half-bridge module of the present invention, the top structures of the gallium nitride chips a, B in the first group of gallium nitride chips and the gallium nitride chips C, D in the second group of gallium nitride chips are provided with a first gate, a first source and a first drain, the bottom structures thereof are provided with a second drain, and the first source and the first drain are arranged in parallel and cross arrangement.
In the gallium nitride half-bridge module, the gallium nitride chips A and B in the first group of gallium nitride chips and the gallium nitride chips C and D in the second group of gallium nitride chips are welded to the first base region and the second base region through bonding wires, the first grid electrode and the first drain electrode are welded to the connecting line through bonding wires, and the second drain electrode is assembled on the first base region and the second base region through bonding media.
In the gallium nitride half-bridge module of the invention, the number of the first sources of the gallium nitride chips A, B in the first group of gallium nitride chips and the number of the first drains of the gallium nitride chips C, D in the second group of gallium nitride chips is 4.
In the gallium nitride half-bridge module, a plurality of passive elements are arranged at the peripheral positions of the top structure of the laminated substrate (11), one active element is arranged at the middle position, and the passive elements and the active elements are interconnected and conducted through the etched copper foil circuit on the laminated substrate.
In the gallium nitride half-bridge module, pressure welding ports for interconnecting and leading out the passive element (17) and the active element are arranged at the peripheral positions of the bottom structure of the laminated substrate (11), and radiating fins are arranged at the positions, corresponding to the active element, above the central positions.
In the gallium nitride half-bridge module, a plurality of etching ports are arranged on two sides of the copper-clad ceramic substrate, and the etching ports are in one-to-one correspondence with a plurality of terminals on the lead frame and are connected with each other in an interconnecting mode.
In the gallium nitride half-bridge module of the invention, an NTC thermistor is arranged between any two adjacent terminals on the lead frame.
In the gallium nitride half-bridge module of the invention, the encapsulation is performed in the package body by epoxy resin, and the copper-clad ceramic substrate, the first half-bridge circuit unit, the second half-bridge circuit unit, the laminated substrate, the lead frame and the terminals are encapsulated.
The gallium nitride half-bridge module has the following beneficial effects: the gallium nitride half-bridge module formed by reasonably designing the layout structure of the gallium nitride chip in the package greatly reduces the external dimension of the package, thereby reducing the occupied area on the printed circuit board; and the gallium nitride half-bridge module can more quickly reduce parasitic parameters and peak voltage after the module is packaged, and further improves system performance and product reliability.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic diagram of a gallium nitride half-bridge module according to the invention;
FIG. 2 is a schematic top-level structure of a GaN chip employed in the GaN half-bridge module of the invention;
FIG. 3 is a schematic top view of a laminated substrate in a GaN half-bridge module according to the present invention;
FIG. 4 is a schematic diagram of the bottom structure of a laminated substrate in a GaN half-bridge module according to the present invention;
fig. 5 is a view showing an external appearance of the gallium nitride half-bridge module according to the invention after encapsulation.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, which is a schematic structural diagram of a gallium nitride half-bridge module according to the present invention, the present invention provides a gallium nitride half-bridge module, including a package body 100, and a package disposed in the package body 100: the surface of the copper-clad ceramic substrate 2 is etched with a first base region 4, a second base region 5 and a connecting circuit 6; a first half-bridge circuit unit 12 formed by interconnection of a first group of gallium nitride chips is arranged in the first base region 4, and a second half-bridge circuit unit 12' formed by interconnection of a second group of gallium nitride chips is arranged in the second base region 5; a laminated substrate 11 disposed above the connection wiring 6 for interconnecting the connection wiring 6 with the first base region 4 and the second base region 5; and a lead frame 1 interconnected with the copper-clad ceramic substrate 2, a plurality of terminals 3 are provided on the lead frame 1, and free ends of the plurality of terminals 3 protrude outside the package body 100 to form electrical connection pins.
Therefore, the gallium nitride half-bridge module provided by the invention reduces the packaging size and reduces parasitic inductance parameters in the high-frequency application process by optimizing a plurality of independent gallium nitride devices into the interconnected half-bridge module. After bridge modular packaging, output voltage ripple and current ripple coefficients are very small, and only very small filter inductance and capacitance are needed, so that output voltage ripple and current ripple can be very small, and system performance and product reliability are greatly improved.
As shown in fig. 5, the external appearance structure diagram of the gallium nitride half-bridge module of the invention after encapsulation is shown. The details are described below with reference to fig. 1 and 5, and the details are described below with reference to fig. 1 and 5. The gallium nitride half-bridge module comprises a package body 100, wherein a lead frame 1, a copper-clad ceramic substrate 2, a laminated substrate 11 and a gallium nitride chip are arranged in the package body 100. The number of the gallium nitride chips is 4, namely a gallium nitride chip A7, a gallium nitride chip B8, a gallium nitride chip C9 and a gallium nitride chip D10. The gallium nitride chip A7 and the gallium nitride chip B8 form a first group of gallium nitride chips which are interconnected to form a first half-bridge circuit unit 12; the gallium nitride chip C9 and the gallium nitride chip D10 constitute a second group of gallium nitride chips, and the two are interconnected to constitute a second half-bridge circuit unit 12'.
The surface of the copper-clad ceramic substrate 2 is etched with a first base region 4, a second base region 5 and a connecting circuit 6. The first base region 4 is provided therein with a first half-bridge circuit unit 12 constituted by a first group of gallium nitride chip interconnections, specifically: a gallium nitride chip A7 is provided above, i.e., at an upper position of the first base region 4, and another gallium nitride chip B8 is provided below, i.e., at a lower position parallel to the gallium nitride chip A7. A second half-bridge circuit unit 12' formed by interconnection of a second group of gallium nitride chips is arranged in the second base region 5, in particular: a gallium nitride chip C9 is provided above, i.e., at an upper position of the second base region 5, and another gallium nitride chip D10 is provided below, i.e., at a lower position parallel to the gallium nitride chip C9. In particular, two gallium nitride chips A7 and B8 on the first base region 4 are interconnected to form a half-bridge circuit unit, and the other two gallium nitride chips C9 and D10 on the second base region 5 are also interconnected to form a half-bridge circuit unit. Therefore, the highly integrated half-bridge circuit unit greatly simplifies the circuit design, improves the utilization rate of the internal packaging space, reduces the packaging external dimension and can effectively reduce the area of the PCB.
A laminated substrate 11 is provided above the connection line 6, and the laminated substrate 11 is electrically connected to the first base region 4, the second base region 5, the gallium nitride chip A7, the gallium nitride chip B8, the gallium nitride chip C9, and the gallium nitride chip D10 via the connection line 6. In addition, the copper-clad ceramic substrate 2 and the lead frame 1 are interconnected and led out. Preferably, the lead frame 1 has 24 terminals 3.
A heat dissipation structure 200 is further provided outside the package 100. Further, a clamping part 300 is provided outside the package 100 for facilitating welding, assembling, taking, etc., and even for facilitating screw fixation in the later assembly.
Fig. 2 is a schematic diagram of the top layer structure of a gallium nitride chip used in the gallium nitride half-bridge module according to the invention. The number of the gallium nitride chips is 4, namely a gallium nitride chip A7, a gallium nitride chip B8, a gallium nitride chip C9 and a gallium nitride chip D10, which are identical in packaging appearance, model and structure.
The top structures of the gallium nitride chip A7, the gallium nitride chip B8, the gallium nitride chip C9 and the gallium nitride chip D10 are provided with a first grid 13, a first source 14 and a first drain 15, the bottom structure of the top structures is a second drain, preferably, 4 first sources 14 are arranged, 3 first drains 15 are arranged, and the first drains 15 and the first sources 14 are arranged in parallel and in a crossed mode and are in a crossed geometric distribution state. Specifically, the first source 14 layout area, the first drain 15 layout area, the first source 14 layout area and the first drain 15 layout area … … are horizontally arranged in sequence. It is understood that the number of first sources 14 and first drains 15 may be defined according to the number of source and drain windows of the chip itself, and not necessarily 4 and 3, respectively.
As shown in fig. 1 and 2, the first source 14 of the gallium nitride chip A7, the gallium nitride chip B8, the gallium nitride chip C9 and the gallium nitride chip D10 is bonded and welded to the first base region 4 and the second base region 5 through the bonding copper wire 16; the first gate electrode 13 and the first drain electrode 15 are also bonded to the connection wiring 6 by the bonding copper wire 16, and the second drain electrodes of the gallium nitride chip A7, the gallium nitride chip B8, the gallium nitride chip C9, and the gallium nitride chip D10 are mounted on the first base region 4 and the second base region 5 by the bonding medium. Preferably, the bonding medium may be conductive paste, insulating paste, sintered silver, solder paste, or the like.
Referring to fig. 3 and 4, fig. 3 is a schematic top structure of a laminated substrate in a gallium nitride half-bridge module according to the invention, and fig. 4 is a schematic bottom structure of the laminated substrate.
At the peripheral position of the top structure of the laminate substrate 11, there are a plurality of passive elements 17, in this embodiment 5 passive elements 17, preferably capacitive and resistive devices, and at the intermediate position there is one active element 18, in particular an integrated drive circuit device, the active element 18. The above 5 passive elements 17 and active elements 18 are interconnected by etched copper foil circuits 19 on the laminate substrate 11. Preferably, the passive element 17 has a 0402 type resistor, the capacitor has a 0603 type capacitor, and the active device 18 has a driving control I C using DFN3X3 package. The circuits provided on the laminate substrate 11 are mainly used to amplify weak control signals to cause signals of different levels to be converted, so that they control various external devices or elements through level conversion. Therefore, the gallium nitride half-bridge module is characterized in that the gallium nitride chips integrated inside are formed into half-bridge circuit units in pairs, and an external clamping circuit is omitted by virtue of an integrated driving circuit device inside the package, so that associated parasitic parameters can be obviously reduced.
At the peripheral position of the bottom structure of the laminated substrate 11, bonding ports 20 for interconnecting and leading out the passive element 17 and the active element 18 are arranged, and a heat sink 21 is provided at the intermediate position corresponding to the position of the upper active element 18.
Further, as shown in fig. 1, a plurality of terminals 3 are disposed on the lead frame 1, and a plurality of etching ports 22 are disposed on two sides of the copper-clad ceramic substrate 2, where the plurality of etching ports 22 are used for one-to-one correspondence with the plurality of terminals 3 on the lead frame 1 and are interconnected and conducted so as to lead out functional signals, and play a role in mechanical support protection. Specifically, the terminals 3 include a terminal close to the copper-clad ceramic substrate 2 and a free end far away from the copper-clad ceramic substrate 2, and the etched ports 22 are interconnected with the terminals of the terminals 3, and all or part of the free ends extend out of the package 100 to form electrical connection pins.
In the present invention, the number of the etching ports 22 is preferably 24, and the number of the terminals on the lead frame 1 is also 24 correspondingly.
Further, an NTC thermistor 23 is provided between any two adjacent terminals 3 on the lead frame 1. The optimized terminal and pin design can obviously reduce parasitic parameters of main power and voltage peaks caused by the parasitic parameters, and further improve system performance and reliability.
Therefore, the gallium nitride half-bridge module provided by the invention has the advantages that the internal space utilization rate is improved by reasonably designing the layout structure of the gallium nitride chip in the package, so that the semiconductor devices are distributed more compactly and stably, and the formed gallium nitride half-bridge module greatly reduces the external size of the package, thereby reducing the occupied area on the printed circuit board; and the gallium nitride half-bridge module can more rapidly reduce parasitic parameters and peak voltage after module encapsulation, further improves system performance and product reliability, namely fully plays the advantages of gallium nitride materials to thoroughly solve the problems of switching loss, voltage overshoot, heat dissipation and the like.
In the present invention, the "interconnect" is an interconnect having an electrical connection characteristic. Furthermore, unless explicitly specified and limited otherwise, the terms "connected," "stacked," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally formed; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (10)
1. Gallium nitride half-bridge module comprising a package (100), characterized in that inside said package is provided:
a first base region (4), a second base region (5) and a copper-clad ceramic substrate (2) of a connecting circuit (6) are etched on the surface, a first half-bridge circuit unit (12) formed by interconnecting a first group of gallium nitride chips is arranged in the first base region (4), and a second half-bridge circuit unit (12') formed by interconnecting a second group of gallium nitride chips is arranged in the second base region (5);
a laminated substrate (11) disposed above the connection line (6) for interconnecting the connection line (6) with the first base region (4) and the second base region (5);
and a lead frame (1) interconnected with the copper-clad ceramic substrate (2), wherein a plurality of terminals (3) are arranged on the lead frame (1), and the free ends of the terminals (3) extend out of the package body (100) to form electric connection pins.
2. The gallium nitride half-bridge module according to claim 1, wherein,
the first group of gallium nitride chips comprises gallium nitride chips A (7) and gallium nitride chips B (8), wherein the gallium nitride chips A (7) are arranged at the upper position of the first base region (4), the gallium nitride chips B (8) are arranged at the lower position of the first base region (4), and the gallium nitride chips A (7) and the gallium nitride chips B (8) are parallel to each other;
the second group of gallium nitride chips comprises gallium nitride chips C (9) and gallium nitride chips D (10), the gallium nitride chips C (9) are arranged at the upper position of the second base region (5), the gallium nitride chips D (10) are arranged at the lower position of the second base region (5), and the gallium nitride chips C (9) and the gallium nitride chips D (10) are parallel to each other.
3. Gallium nitride half-bridge module according to claim 2, wherein the top structures of the gallium nitride chips a (7), B (8) and C (9) and D (10) in the first group of gallium nitride chips are provided with a first gate (13), a first source (14) and a first drain (15), the bottom structures thereof are provided with a second drain, the first source (14) and the first drain (15) are plural, and the plural first sources (14) and the first drains (15) are arranged in parallel and intersecting.
4. A gallium nitride half-bridge module according to claim 3, wherein,
gallium nitride chip A (7), gallium nitride chip B (8) in the first group of gallium nitride chips and gallium nitride chip C (9) in the second group of gallium nitride chips, first source (14) of gallium nitride chip D (10) are welded to first base region (4) and second base region (5) through bonding wires (16), first grid (13) and first drain (15) are welded to connecting line (6) through bonding wires (16), and second drain is assembled on first base region (4) and second base region (5) through bonding media.
5. The gallium nitride half-bridge module according to claim 4, wherein,
the number of the gallium nitride chips A (7), the gallium nitride chips B (8) in the first group of gallium nitride chips and the number of the gallium nitride chips C (9) and the first source electrodes (14) and the number of the first drain electrodes (15) in the second group of gallium nitride chips are 4.
6. The gallium nitride half-bridge module according to claim 1, wherein,
a plurality of passive elements (17) are arranged at the periphery of the top structure of the laminated substrate (11), an active element (18) is arranged at the middle position, and the passive elements (17) and the active element (18) are interconnected and conducted through an etched copper foil circuit (19) on the laminated substrate (11).
7. The gallium nitride half-bridge module according to claim 6, wherein,
and pressure welding ports (20) for interconnecting and leading out the passive elements (17) and the active elements (18) are arranged at the peripheral positions of the bottom structure of the laminated substrate (11), and heat radiating fins (21) are arranged at the middle positions corresponding to the positions of the active elements (18) above.
8. The gallium nitride half-bridge module according to claim 1, wherein,
and a plurality of etching ports (22) are arranged on two sides of the copper-clad ceramic substrate (2), and the etching ports (22) are in one-to-one correspondence with a plurality of terminals (3) on the lead frame (1) and are interconnected and conducted.
9. The gallium nitride half-bridge module according to claim 8, wherein,
an NTC thermistor (23) is arranged between any two adjacent terminals (3) on the lead frame (1).
10. Gallium nitride half-bridge module according to claim 1, characterized in that the copper-clad ceramic substrate (2), the first half-bridge circuit unit (12), the second half-bridge circuit unit (12'), the laminate substrate (11), the lead frame (1) and the plurality of terminals (3) are encapsulated within the package (100) by potting protection with epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311053020.0A CN117012726A (en) | 2023-08-21 | 2023-08-21 | Gallium nitride half-bridge module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311053020.0A CN117012726A (en) | 2023-08-21 | 2023-08-21 | Gallium nitride half-bridge module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117012726A true CN117012726A (en) | 2023-11-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311053020.0A Pending CN117012726A (en) | 2023-08-21 | 2023-08-21 | Gallium nitride half-bridge module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117012726A (en) |
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- 2023-08-21 CN CN202311053020.0A patent/CN117012726A/en active Pending
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