CN116581110B - Full-bridge power module based on gallium nitride chip packaging - Google Patents
Full-bridge power module based on gallium nitride chip packaging Download PDFInfo
- Publication number
- CN116581110B CN116581110B CN202310551208.1A CN202310551208A CN116581110B CN 116581110 B CN116581110 B CN 116581110B CN 202310551208 A CN202310551208 A CN 202310551208A CN 116581110 B CN116581110 B CN 116581110B
- Authority
- CN
- China
- Prior art keywords
- circuit board
- gallium nitride
- base region
- nitride chip
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 83
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 238000004806 packaging method and process Methods 0.000 title claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000011889 copper foil Substances 0.000 claims abstract description 19
- 239000000919 ceramic Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000004100 electronic packaging Methods 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Abstract
The invention relates to a full-bridge power module based on gallium nitride chip package, which comprises a shell, a laminated circuit board positioned in the shell, a plurality of first lead terminals positioned on one side of the laminated circuit board and a plurality of second lead terminals positioned on the other side of the laminated circuit board, wherein each of the first lead terminals and the second lead terminals comprises a terminal close to the side edge of the laminated circuit board; a base region formed by a plurality of copper foils is arranged on the surface of the laminated circuit board side by side, each base region is provided with a gallium nitride chip, and two adjacent gallium nitride chips are interconnected to form a full-bridge circuit; the surface of the laminated circuit board is also provided with a driving circuit board, and each full-bridge circuit is electrically connected with one driving circuit board; each base region is electrically connected with a wiring end of one second lead terminal respectively, each driving circuit board is partially electrically connected with the wiring end of the first lead terminal through a binding wire, and the other part of the driving circuit board is connected with the auxiliary adapter plate through the binding wire, and the auxiliary connecting plate is electrically connected with the wiring end of the first lead terminal through the binding wire.
Description
Technical Field
The invention relates to the technical field of assembly of advanced packaging modules, in particular to a full-bridge power module based on gallium nitride chip packaging.
Background
The gallium nitride power integrated circuit integrates a driving, controlling and protecting circuit and a power device together to form a modularized packaging product, the gallium nitride power management integrated circuit is also included in the category of the power integrated circuit, the gallium nitride power device or chip, an overvoltage, overcurrent, overheat and other sensing and protecting circuit, the driving and controlling circuit and the like are integrated in the same package, and the gallium nitride power device or chip, the overvoltage, overcurrent, overheat and other sensing and protecting circuit, the driving and controlling circuit and the like are packaged together in a module form to form a full-bridge power module, which has good thermal stability and electrical property, and can be widely applied to photovoltaic inversion, control power supply and the like so as to provide high-efficiency, low-noise and high-stability power control.
At present, the gallium nitride chip packaging is still in an unstable state when applied to the technology of a modularized technology, particularly in the aspects of new packaging and new technology preparation, and the problem of low reliability of packaging modularization still takes the dominant role.
Disclosure of Invention
The invention aims to provide a full-bridge power module based on gallium nitride packaging, wherein a gallium nitride chip integrated inside the full-bridge power module forms a full-bridge circuit, and the influence of associated parasitic parameters can be obviously reduced by virtue of control of a driving circuit inside the packaging, so that the influence of external environment is avoided, the anti-interference performance is improved, the manufacturing method is simplified, the yield and the reliability are improved, the power module has mass production, and meanwhile, the stability of the product quality is ensured.
In order to solve the above problems, the present invention provides a full-bridge power module based on a gallium nitride chip package, which is characterized by comprising a housing, a laminated circuit board positioned in the housing, and a plurality of first lead terminals side by side positioned on one side of the laminated circuit board and a plurality of second lead terminals side by side positioned on the other side of the laminated circuit board, wherein each of the first lead terminals and the second lead terminals comprises a terminal end close to the side of the laminated circuit board and a free end far away from the laminated circuit board, and at least part of the free ends of the first lead terminals and the second lead terminals extend out of the housing to form an electrical connection pin; the surface of the laminated circuit board is provided with a base region formed by a plurality of copper foils side by side, each base region is provided with a gallium nitride chip, and two adjacent gallium nitride chips are interconnected to form a full-bridge circuit; the surface of the laminated circuit board is also provided with a driving circuit board, and each full-bridge circuit is electrically connected with one driving circuit board; each base region is electrically connected with a wiring end of one second lead terminal respectively, each driving circuit board is partially electrically connected with the wiring end of the first lead terminal through a binding wire, and the other part of the driving circuit board is connected with an auxiliary adapter plate through the binding wire, and the auxiliary connecting plate is electrically connected with the wiring end of the first lead terminal through the binding wire.
Further, the laminated circuit board comprises a ceramic substrate, wherein the back of the ceramic substrate is covered with a copper foil layer, six copper foil formed base regions are arranged side by side on one side, close to the second lead terminal, of the front surface of the ceramic substrate, and the base regions are a first base region, a second base region, a third base region, a fourth base region, a fifth base region and a sixth base region, a first gallium nitride chip, a second gallium nitride chip, a third gallium nitride chip, a fourth gallium nitride chip, a fifth gallium nitride chip and a sixth gallium nitride chip are sequentially arranged on the other side, close to the first lead terminal, of the front surface of the ceramic substrate, and three blank regions are arranged on the other side, close to the first lead terminal, of the front surface of the ceramic substrate, and a driving circuit board is respectively arranged; and a wiring area formed by copper foil is also arranged between the blank area and the base area.
Further, two packaging elements are connected between at least one base region where each full-bridge circuit is located and the routing region.
Further, source regions of the first gallium nitride chip, the third gallium nitride chip and the fifth gallium nitride chip are bonded on the wiring region through binding wires, drain regions are respectively bonded with the base regions where the drain regions are located through binding wires, and gate regions are respectively connected with one driving circuit board through binding wires.
Further, a source region of the second gallium nitride chip is bonded on the first base region through a binding line, a drain region of the second gallium nitride chip is bonded on the second base region through a binding line, and a gate region of the second gallium nitride chip is connected with a driving circuit board connected with the first gallium nitride chip through a binding line; the source electrode region of the fourth gallium nitride chip is bonded on the third base region through a binding line, the drain electrode region is bonded on the fourth base region through a binding line, and the gate electrode region is connected with a driving circuit board connected with the third gallium nitride chip through a binding line; the source electrode region of the sixth gallium nitride chip is bonded on the fifth base region through a binding line, the drain electrode region is bonded on the sixth base region through a binding line, and the gate electrode region is connected with a driving circuit board connected with the fifth gallium nitride chip through a binding line.
Furthermore, the auxiliary adapter plate is a ceramic plate, a plurality of copper foil base regions are sintered on the surface of the auxiliary adapter plate and used as transition transfer of binding wire bonding, the bottom surface of the ceramic plate is a copper sheet with a whole surface, and the copper sheet is welded to the wiring end of the first lead terminal.
Further, the driving circuit board is a printed circuit board, and comprises a driving IC device on the surface and a plurality of passive devices welded around the driving IC device, and the welding area is electrically connected with the auxiliary adapter board and the laminated circuit board through binding wires.
Further, the routing area, the first base area and the sixth base area are interconnected with the terminal through binding wires, and the second base area, the third base area, the fourth base area and the fifth base area are interconnected with the terminal through solder coating sintering.
Furthermore, the shell is encapsulated and protected by epoxy resin, and the auxiliary adapter plate, the laminated circuit board, the driving circuit board, the first lead terminal and the second lead terminal are encapsulated.
Compared with the prior art, the full-bridge power module based on gallium nitride chip packaging has the beneficial effects and advantages that: complicated operation steps are simplified through the novel structure and layout design, the application range of the power semiconductor module device is widened, the reliability of the power electronic device is improved, and the laminated circuit board is a ceramic substrate which is integrally sintered and then is used as a bearing substrate, so that the package has insulating property and excellent heat dissipation in the high-frequency characteristic application process; and the packaging application of the power chip with higher specification and high current density can be carried, an excellent device packaging platform is provided for the technologies of updating iterative high-end server power supply, inverter circuit, motor drive energy storage and charging pile and the like, and the high current density and mass production application requirements are realized.
Drawings
FIG. 1 is an internal plan view of a full-bridge power module based on GaN chip packaging;
FIG. 2 is a top plan view of a laminated circuit board;
FIG. 3 is a side view of a laminated circuit board;
FIG. 4 is a schematic plan view of the auxiliary adapter plate;
fig. 5 is an overall plan view of a full-bridge power module based on gallium nitride chip packaging.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1 to 5, the embodiment of the present invention provides a full bridge power based on a gallium nitride chip package, which includes a housing 1, and a lead frame 2, an auxiliary interposer 3, a laminate circuit board 4, and a driving circuit board 5, which are encapsulated inside the housing 1. The lead frame 2 comprises a plurality of first lead terminals 16 located on one side of the laminated circuit board 4 side by side along the length direction of the laminated circuit board 4 and a plurality of second lead terminals 61 located on the other side of the laminated circuit board 4 side by side along the parallel other length direction, each of the first lead terminals 16 and the second lead terminals 61 having a terminal end near the side of the laminated circuit board 4 and a free end far from the side of the laminated circuit board 4, at least a part of the free ends protruding outside the housing 1 to form electrical connection pins.
As shown in fig. 2 and 3, the laminated circuit board 4 comprises a ceramic substrate 9, wherein a base region formed by a plurality of copper foils is laid side by side on one side of the front surface of the ceramic substrate 9, which is close to the second lead terminal 61, and each base region is provided with a gallium nitride chip 7, and two adjacent gallium nitride chips 7 are interconnected to form a full-bridge circuit; in this embodiment, the back surface of the ceramic substrate 9 is covered with a copper foil layer 31, and six base regions made of copper foil are arranged side by side on the front surface near the second lead terminal 61, and are respectively a first base region 18, a second base region 19, a third base region 20, a fourth base region 21, a fifth base region 22, and a sixth base region 23, and a first gallium nitride chip 25, a second gallium nitride chip 26, a third gallium nitride chip 27, a fourth gallium nitride chip 28, a fifth gallium nitride chip 29, and a sixth gallium nitride chip 30 are sequentially arranged. And the other side of the front surface, which is close to the first lead terminal 16, is provided with three square blank areas which are sequentially arranged side by side at intervals, and each square blank area is provided with a driving circuit board 5; a trace region 24 of copper foil is also provided between the blank region and the base region. The routing area 24 extends around each full bridge circuit.
Each full-bridge circuit is electrically connected with one driving circuit board 5; each base region is electrically connected to a terminal of one of the second lead terminals 61, respectively, and each driving circuit board 5 is electrically connected to a terminal of the first lead terminal 16 through the bonding wire 33 or to a terminal of the first lead terminal 16 through the auxiliary interposer 3. Specifically, six gallium nitride chips 7 and electronic packaging elements 8 are respectively arranged on the laminated circuit board 4 and are used for decoupling the full-bridge circuit, so that an energy storage device for providing energy for the full-bridge circuit is provided, and the load and the impedance are reduced.
The surface of the gallium nitride chip 7 is provided with two grid regions 10, three source regions 11 and three drain regions 12, two adjacent gallium nitride chips 7 are interconnected to form a full-bridge circuit, the driving circuit board 5 is provided with driving IC devices 13, five passive devices 14 are circumferentially distributed around the driving circuit board 5, and the driving circuit board 5 is arranged on the upper surface of the laminated circuit board 4.
The two ends of the lead frame 2 are provided with a lead terminal 16 and an inner pin 17, the inner pin 17 at one end of the lead frame 2 is connected with the auxiliary adapter plate 3, the inner pin 17 at the other end of the lead frame 2 is connected with the laminated circuit board 4, and the lead terminal 16 of the lead frame 2 extends to the two ends outside the shell 1 to form electric connection pins.
The first base region 18, the second base region 19, the third base region 20, the fourth base region 21, the fifth base region 22, the sixth base region 23, and the wiring region 24 have a copper foil thickness of 0.3mm. Two electronic packaging elements 8 are respectively arranged at the positions of the second base region 19, the fourth base region 21 and the sixth base region 23 and between the corresponding wiring regions 24, and the two electronic packaging elements 8 are vertically distributed at equal intervals; the ceramic substrate 9 has an overall length of 30mm, a width of 14mm, a thickness of 0.38mm, and a bottom layer sintered as a monolithic copper foil layer 31 having a thickness of 0.3mm. The copper foil layer 31 is exposed at the hollowed-out opening of the bottom surface of the shell 1 to serve as a heat dissipation layer for heat conduction.
As shown in fig. 1, the three source regions 11 of the first gallium nitride chip 25, the third gallium nitride chip 27, and the fifth gallium nitride chip 29 are bonded on the wiring region 24 by the bonding wires 33. The drain region 12 of the first gallium nitride chip 25 is bonded to the first base region 18 through the bonding wire 33, and the gate region 10 is connected to the first driving circuit board 5 through the bonding wire 33. The drain region 12 of the third gallium nitride chip 27 is bonded to the third base region 20 through the bonding line 33, and the gate region 10 is connected to the second driving circuit board 5 through the bonding line 33. The drain region 12 of the fifth gallium nitride chip 29 is bonded to the fifth base region 22 through the bonding wire 33, and the gate region 10 is connected to the third driving circuit board 5 through the bonding wire 33.
The three source regions 11 of the second gallium nitride chip 26 are bonded to the first base region 18 via bonding lines 33, the three drain regions 12 are bonded to the second base region 19 via bonding lines 33, and the gate region 10 is connected to the first driving circuit board 5 via bonding lines 33. The three source regions 11 of the fourth gallium nitride chip 28 are bonded to the third base region 20 via bonding lines 33, the three drain regions 12 are bonded to the fourth base region 21 via bonding lines 33, and the gate region 10 is connected to the second driving circuit board 5 via bonding lines 33. The three source regions 11 of the sixth gallium nitride chip 30 are bonded to the fifth base region 22 through bonding wires 33, the three drain regions 12 are bonded to the sixth base region 23 through bonding wires 33, and the gate region 10 is connected to the third driving circuit board 5 through bonding wires 33.
Specifically, the gate region 10 of the gallium nitride chip 7 is bonded to the next-to-be-adjacent-side land of the driving circuit board 5 by the bonding wire 33.
As shown in fig. 4, the auxiliary adapter plate 3 is also a ceramic substrate, the overall length and width are 6mm x 2.6mm, 6 rectangular copper foil base regions 34 which are arranged at equal intervals are sintered on the surface of the auxiliary adapter plate, so that transition transfer interconnection of bonding wires 33 is facilitated, deformation wire collapse caused by overlong bonding is avoided, the bottom surface is a whole sintered copper sheet, and the whole sintered copper sheet is subjected to reflow soldering to the wiring end of a first lead terminal 16, which is positioned beside, of the lead frame 2 after being coated with solder paste.
As shown in fig. 1, the driving circuit board 5 is a PCB printed circuit board, and the periphery thereof is etched to lead out the soldering areas, i.e. a plurality of soldering areas are formed around the periphery thereof; the driving IC device 13 and 5 passive elements 14 are soldered on the printed circuit board in advance by reflow soldering, and the lands in the spaces are electrically interconnected and conducted with the auxiliary interposer 3 and the laminated circuit board 4 by bonding wires 33. Wherein, one side welding area is close to the gallium nitride chip 7 and is used for being electrically connected with the grid electrode area 10 on the gallium nitride chip; the other side welding area is close to the wiring end of the first lead terminal 16, one part of the welding area is electrically connected with the wiring end of the first lead terminal 16 through a binding line 33, the other part of the welding area is connected with the auxiliary adapter plate 3 through the binding line 33, and the auxiliary connecting plate 3 is electrically connected with the wiring end of the first lead terminal 16 through the binding line 33.
As shown in fig. 1 to 2, the trace region 24, the first base region 18, and the sixth base region 23 are interconnected with the terminals of the second lead terminals 61 on both sides by the bonding wire 33, and the remaining second base region 19, third base region 20, fourth base region 21, and fifth base region 22 are interconnected with the terminals of the second lead terminals 61 in between by solder paste application sintering.
As shown in fig. 5, the casing 1 is encapsulated in a mold by epoxy resin, and encapsulates the auxiliary interposer 3, the laminated circuit board 4, the driving circuit board 5, and the inner leads 17 of the lead frame 2, thereby preventing the inside from being corroded by chemical or physical environments.
The full-bridge power module based on the gallium nitride chip package has the beneficial effects that complicated operation steps are simplified through a novel structure and layout design, the application range of a power semiconductor module device is widened, the reliability of a power electronic device is improved, and a laminated circuit board is a ceramic substrate which is integrally sintered and then is used as a bearing substrate, so that the package has insulation performance and excellent heat dissipation in the application process of high-frequency characteristics; and the packaging application of the power chip with higher specification and high current density can be carried, an excellent device packaging platform is provided for the technologies of updating iterative high-end server power supply, inverter circuit, motor drive energy storage and charging pile and the like, and the high current density and mass production application requirements are realized.
It is to be understood that the above examples of the present invention are merely illustrative of the application of the present invention and are not limiting of the embodiments of the present invention; other variations or modifications of the various aspects will be apparent to persons skilled in the art from the foregoing description, and it is not necessary or exhaustive of all embodiments; any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (5)
1. A full bridge power module based on gallium nitride chip package, comprising a housing (1), a laminated circuit board (4) located in the housing (1), and further comprising a plurality of first lead terminals (16) located side by side on one side of the laminated circuit board (4) and a plurality of second lead terminals (61) located side by side on the other side of the laminated circuit board (4), each of the first lead terminals (16) and the second lead terminals (61) comprising a terminal near the side of the laminated circuit board (4) and a free end far from the laminated circuit board (4), at least part of the free ends of the first lead terminals (16) and the second lead terminals (61) protruding outside the housing (1) to form an electrical connection pin; the surface of the laminated circuit board (4) is provided with a base region formed by a plurality of copper foils in parallel, each base region is provided with a gallium nitride chip (7), and two adjacent gallium nitride chips (7) are connected to form a full-bridge circuit; the surface of the laminated circuit board (4) is also provided with a driving circuit board (5), and each full-bridge circuit is electrically connected with one driving circuit board (5); each base region is electrically connected with a wiring end of one second lead terminal (61), each driving circuit board (5) is partially electrically connected with a wiring end of the first lead terminal (16) through a binding line (33), and the other part of the driving circuit board is connected with an auxiliary adapter plate (3) through the binding line (33), and the auxiliary connecting plate (3) is electrically connected with the wiring end of the first lead terminal (16) through the binding line (33);
The laminated circuit board (4) comprises a ceramic substrate (9), wherein a copper foil layer (31) is coated on the back surface of the ceramic substrate (9), six copper foil formed base regions are arranged on one side, close to a second lead terminal (61), of the front surface side in parallel, the base regions are respectively a first base region (18), a second base region (19), a third base region (20), a fourth base region (21), a fifth base region (22) and a sixth base region (23), a first gallium nitride chip (25), a second gallium nitride chip (26), a third gallium nitride chip (27), a fourth gallium nitride chip (28), a fifth gallium nitride chip (29) and a sixth gallium nitride chip (30) are sequentially arranged on the other side, close to the first lead terminal (16), of the front surface side, three blank regions are arranged on the other side, and a driving circuit board (5) is respectively installed; a wiring area (24) formed by copper foil is arranged between the blank area and the base area;
Two packaging elements (8) are connected between at least one base region where each full-bridge circuit is located and the wiring region (24);
the auxiliary adapter plate (3) is a ceramic plate, a plurality of copper foil base regions (34) are sintered on the surface of the auxiliary adapter plate, and used as transition transfer of bonding of the binding wires (33), the bottom surface of the ceramic plate is a copper sheet with a whole surface, and the copper sheet is welded to the wiring end of the first lead terminal (16);
The driving circuit board (5) is a printed circuit board and comprises a driving IC device (13) on the surface and a plurality of passive devices (14) welded around the driving IC device (13), and the welding area is electrically connected with the auxiliary adapter board (3) and the laminated circuit board (4) through binding wires (33).
2. The full-bridge power module based on gallium nitride chip package according to claim 1, wherein the source regions (11) of the first gallium nitride chip (25), the third gallium nitride chip (27) and the fifth gallium nitride chip (29) are bonded on the routing regions (24) through bonding wires (33), the drain regions (12) are respectively bonded with the base regions where the source regions are located through bonding wires (33), and the gate regions (10) are respectively connected with one of the driving circuit boards (5) through bonding wires (33).
3. The full-bridge power module based on gallium nitride chip package according to claim 2, wherein the source region (11) of the second gallium nitride chip (26) is bonded to the first base region (18) by a bonding wire (33), the drain region (12) is bonded to the second base region (19) by a bonding wire (33), and the gate region (10) is connected to the driving circuit board (5) to which the first gallium nitride chip (25) is connected by a bonding wire (33); the source region (11) of the fourth gallium nitride chip (28) is bonded on the third base region (20) through a binding line (33), the drain region (12) is bonded on the fourth base region (21) through the binding line (33), and the gate region (10) is connected with the driving circuit board (5) connected with the third gallium nitride chip (27) through the binding line (33); the source region (11) of the sixth gallium nitride chip (30) is bonded on the fifth base region (22) through a bonding wire (33), the drain region (12) is bonded on the sixth base region (23) through the bonding wire (33), and the gate region (10) is connected with the driving circuit board (5) connected with the fifth gallium nitride chip (29) through the bonding wire (33).
4. The full bridge power module based on gallium nitride chip package according to claim 1, wherein the trace region (24), the first base region (18) and the sixth base region (23) are interconnected with terminals by bond wires (33), and the second base region (19), the third base region (20), the fourth base region (21) and the fifth base region (22) are interconnected with terminals by solder-coated sintering.
5. The full-bridge power module based on gallium nitride chip package according to claim 1, wherein the auxiliary adapter board (3), the laminated circuit board (4), the driving circuit board (5), the first lead terminal (106) and the second lead terminal (61) are encapsulated by encapsulating and protecting the inside of the shell (1) through epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310551208.1A CN116581110B (en) | 2023-05-16 | 2023-05-16 | Full-bridge power module based on gallium nitride chip packaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310551208.1A CN116581110B (en) | 2023-05-16 | 2023-05-16 | Full-bridge power module based on gallium nitride chip packaging |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116581110A CN116581110A (en) | 2023-08-11 |
| CN116581110B true CN116581110B (en) | 2024-05-10 |
Family
ID=87535397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310551208.1A Active CN116581110B (en) | 2023-05-16 | 2023-05-16 | Full-bridge power module based on gallium nitride chip packaging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116581110B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201946588U (en) * | 2010-12-30 | 2011-08-24 | 比亚迪股份有限公司 | Packaging structure for power semiconductors |
| CN208077964U (en) * | 2018-04-09 | 2018-11-09 | 黄山宝霓二维新材科技有限公司 | The encapsulating structure of the plastic sealed IPM modules of high power density |
| CN110176451A (en) * | 2019-05-13 | 2019-08-27 | 珠海格力电器股份有限公司 | Power module and its packaging method |
| CN112582386A (en) * | 2019-09-27 | 2021-03-30 | 珠海格力电器股份有限公司 | Power module, preparation method thereof and electrical equipment |
| CN116093094A (en) * | 2022-12-08 | 2023-05-09 | 西安交通大学 | Half-bridge intelligent power module based on gallium nitride power chip and preparation method thereof |
-
2023
- 2023-05-16 CN CN202310551208.1A patent/CN116581110B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201946588U (en) * | 2010-12-30 | 2011-08-24 | 比亚迪股份有限公司 | Packaging structure for power semiconductors |
| CN208077964U (en) * | 2018-04-09 | 2018-11-09 | 黄山宝霓二维新材科技有限公司 | The encapsulating structure of the plastic sealed IPM modules of high power density |
| CN110176451A (en) * | 2019-05-13 | 2019-08-27 | 珠海格力电器股份有限公司 | Power module and its packaging method |
| CN112582386A (en) * | 2019-09-27 | 2021-03-30 | 珠海格力电器股份有限公司 | Power module, preparation method thereof and electrical equipment |
| CN116093094A (en) * | 2022-12-08 | 2023-05-09 | 西安交通大学 | Half-bridge intelligent power module based on gallium nitride power chip and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116581110A (en) | 2023-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7859079B2 (en) | Power semiconductor device | |
| TWI226110B (en) | Package with stacked substrates | |
| US8916958B2 (en) | Semiconductor package with multiple chips and substrate in metal cap | |
| JP5369798B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN100527412C (en) | Electronic circuit module and method for fabrication thereof | |
| KR102008278B1 (en) | Power chip integrated module, its manufacturing method and power module package of double-faced cooling | |
| WO2007084328A2 (en) | High power module with open frame package | |
| US20190043799A1 (en) | Package structure and fabricating method thereof | |
| CN114743947B (en) | TO-form-based power device packaging structure and packaging method | |
| US11024702B2 (en) | Stacked electronic structure | |
| CN112968025A (en) | Intelligent power module and manufacturing method thereof | |
| CN116581110B (en) | Full-bridge power module based on gallium nitride chip packaging | |
| CN216413057U (en) | Semiconductor circuit having a plurality of transistors | |
| EP4102563A1 (en) | Encapsulation structure, power electrical control system and manufacturing method | |
| CN113113400A (en) | Semiconductor circuit and method for manufacturing semiconductor circuit | |
| CN112490234A (en) | Intelligent power module and manufacturing method thereof | |
| CN214848624U (en) | Semiconductor circuit having a plurality of transistors | |
| US20230369195A1 (en) | Power module and method for manufacturing same | |
| CN216905459U (en) | Circuit board and power module using same | |
| CN220672562U (en) | Gallium nitride half-bridge module | |
| CN214542229U (en) | Intelligent power module | |
| CN215869380U (en) | Modular intelligent power system | |
| CN214705927U (en) | Intelligent power module | |
| JP2001203301A (en) | Resin sealed semiconductor device and manufacturing method thereof | |
| US20230027138A1 (en) | Power module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |