CN116998017A - 光电检测装置和电子设备 - Google Patents

光电检测装置和电子设备 Download PDF

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Publication number
CN116998017A
CN116998017A CN202280021887.5A CN202280021887A CN116998017A CN 116998017 A CN116998017 A CN 116998017A CN 202280021887 A CN202280021887 A CN 202280021887A CN 116998017 A CN116998017 A CN 116998017A
Authority
CN
China
Prior art keywords
electrode pad
semiconductor layer
insulating
layer
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280021887.5A
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English (en)
Chinese (zh)
Inventor
香川恵永
亀嶋隆季
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN116998017A publication Critical patent/CN116998017A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/1765—Method using an image detector and processing of image signal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN202280021887.5A 2021-03-30 2022-03-04 光电检测装置和电子设备 Pending CN116998017A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021058329 2021-03-30
JP2021-058329 2021-03-30
PCT/JP2022/009275 WO2022209571A1 (ja) 2021-03-30 2022-03-04 光検出装置および電子機器

Publications (1)

Publication Number Publication Date
CN116998017A true CN116998017A (zh) 2023-11-03

Family

ID=83458573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280021887.5A Pending CN116998017A (zh) 2021-03-30 2022-03-04 光电检测装置和电子设备

Country Status (5)

Country Link
US (1) US20240175802A1 (https=)
EP (1) EP4318591A4 (https=)
JP (1) JPWO2022209571A1 (https=)
CN (1) CN116998017A (https=)
WO (1) WO2022209571A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024038808A (ja) * 2022-09-08 2024-03-21 キヤノン株式会社 光電変換装置、機器および光電変換装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002043502A (ja) * 2000-07-25 2002-02-08 Toshiba Corp マルチチップ半導体装置、ならびにマルチチップ半導体装置用チップ及びその製造方法
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法
KR20090033636A (ko) * 2007-10-01 2009-04-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2012033894A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置
JP2012064709A (ja) * 2010-09-15 2012-03-29 Sony Corp 固体撮像装置及び電子機器
JP2012084609A (ja) * 2010-10-07 2012-04-26 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2013187360A (ja) * 2012-03-08 2013-09-19 Sony Corp 固体撮像装置、及び、電子機器
KR101934864B1 (ko) * 2012-05-30 2019-03-18 삼성전자주식회사 관통 실리콘 비아 구조물 및 그 제조 방법, 이를 포함하는 이미지 센서 및 그 제조 방법
JP6353354B2 (ja) * 2014-12-12 2018-07-04 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
KR102430496B1 (ko) 2017-09-29 2022-08-08 삼성전자주식회사 이미지 센싱 장치 및 그 제조 방법
KR102636443B1 (ko) * 2018-12-12 2024-02-15 에스케이하이닉스 주식회사 노이즈 차단 구조를 포함하는 이미지 센싱 장치

Also Published As

Publication number Publication date
US20240175802A1 (en) 2024-05-30
WO2022209571A1 (ja) 2022-10-06
JPWO2022209571A1 (https=) 2022-10-06
EP4318591A4 (en) 2024-12-18
TW202247441A (zh) 2022-12-01
EP4318591A1 (en) 2024-02-07

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