CN116997863B - 多分辨率叠加计量目标 - Google Patents

多分辨率叠加计量目标 Download PDF

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Publication number
CN116997863B
CN116997863B CN202180094683.XA CN202180094683A CN116997863B CN 116997863 B CN116997863 B CN 116997863B CN 202180094683 A CN202180094683 A CN 202180094683A CN 116997863 B CN116997863 B CN 116997863B
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China
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target
sub
layer
features
linear grating
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Chinese (zh)
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CN116997863A (zh
Inventor
E·哈贾
A·玛纳森
S·艾森巴赫
A·戈洛塔斯万
Y·格劳尔
E·马斯洛夫斯基
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Physical Vapour Deposition (AREA)
CN202180094683.XA 2021-04-20 2021-08-10 多分辨率叠加计量目标 Active CN116997863B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163176888P 2021-04-20 2021-04-20
US63/176,888 2021-04-20
US17/351,137 2021-06-17
US17/351,137 US11726410B2 (en) 2021-04-20 2021-06-17 Multi-resolution overlay metrology targets
PCT/US2021/045292 WO2022225544A1 (en) 2021-04-20 2021-08-10 Multi-resolution overlay metrology targets

Publications (2)

Publication Number Publication Date
CN116997863A CN116997863A (zh) 2023-11-03
CN116997863B true CN116997863B (zh) 2024-05-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180094683.XA Active CN116997863B (zh) 2021-04-20 2021-08-10 多分辨率叠加计量目标

Country Status (6)

Country Link
US (1) US11726410B2 (https=)
JP (2) JP7597947B2 (https=)
KR (1) KR102733393B1 (https=)
CN (1) CN116997863B (https=)
TW (1) TWI865808B (https=)
WO (1) WO2022225544A1 (https=)

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* Cited by examiner, † Cited by third party
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KR102875946B1 (ko) * 2021-11-27 2025-10-23 케이엘에이 코포레이션 회절 기반 오버레이 오차 계측을 위한 개선된 타겟
KR102554833B1 (ko) * 2023-02-14 2023-07-13 (주)오로스 테크놀로지 오버레이 계측 장치 및 오버레이 계측 방법
CN116991032A (zh) * 2023-07-19 2023-11-03 南方科技大学 一种极紫外光刻胶性能检测装置及方法
CN119725327B (zh) * 2025-02-28 2025-06-06 荣芯半导体(宁波)有限公司 一种对准标记版图及其操作方法

Citations (8)

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WO2004023214A1 (en) * 2002-09-05 2004-03-18 Therma-Wave, Inc. Interferometry-based method and apparatus for overlay metrology
KR100612410B1 (ko) * 2005-08-01 2006-08-16 나노메트릭스코리아 주식회사 오버레이 키, 이를 이용한 오버레이 측정방법 및 측정장치
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
CN104520982A (zh) * 2012-06-26 2015-04-15 科磊股份有限公司 类装置散射测量叠盖目标
WO2015196168A1 (en) * 2014-06-21 2015-12-23 Kla-Tencor Corporation Compound imaging metrology targets
CN108292103A (zh) * 2015-09-30 2018-07-17 Asml荷兰有限公司 计量方法、目标和衬底
CN109937383A (zh) * 2016-11-10 2019-06-25 Asml荷兰有限公司 测量器件制造过程的参数的方法和量测设备
CN110770654A (zh) * 2017-06-19 2020-02-07 科磊股份有限公司 用于基于成像的叠加及基于散射测量的叠加的混合叠加目标设计

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EP1314198B1 (en) * 2000-08-30 2017-03-08 KLA-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6778275B2 (en) 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
JP4538782B2 (ja) * 2004-01-09 2010-09-08 株式会社ニコン 撮像装置
US7065737B2 (en) * 2004-03-01 2006-06-20 Advanced Micro Devices, Inc Multi-layer overlay measurement and correction technique for IC manufacturing
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
JP2013120872A (ja) * 2011-12-08 2013-06-17 Toshiba Corp 重ね合わせ計測方法
KR102094974B1 (ko) 2013-03-08 2020-03-30 삼성전자주식회사 오버레이 계측 방법
KR102295507B1 (ko) * 2014-08-29 2021-09-01 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
JP6421237B2 (ja) 2014-08-29 2018-11-07 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジー方法、ターゲット、及び基板
CN109478023B (zh) * 2016-07-15 2021-09-10 Asml荷兰有限公司 用于量测目标场的设计的方法和设备
WO2018033342A1 (en) * 2016-08-17 2018-02-22 Asml Netherlands B.V. Substrate measurement recipe design of, or for, a target including a latent image

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004023214A1 (en) * 2002-09-05 2004-03-18 Therma-Wave, Inc. Interferometry-based method and apparatus for overlay metrology
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
KR100612410B1 (ko) * 2005-08-01 2006-08-16 나노메트릭스코리아 주식회사 오버레이 키, 이를 이용한 오버레이 측정방법 및 측정장치
CN104520982A (zh) * 2012-06-26 2015-04-15 科磊股份有限公司 类装置散射测量叠盖目标
WO2015196168A1 (en) * 2014-06-21 2015-12-23 Kla-Tencor Corporation Compound imaging metrology targets
CN108292103A (zh) * 2015-09-30 2018-07-17 Asml荷兰有限公司 计量方法、目标和衬底
CN109937383A (zh) * 2016-11-10 2019-06-25 Asml荷兰有限公司 测量器件制造过程的参数的方法和量测设备
CN110770654A (zh) * 2017-06-19 2020-02-07 科磊股份有限公司 用于基于成像的叠加及基于散射测量的叠加的混合叠加目标设计

Also Published As

Publication number Publication date
TW202305512A (zh) 2023-02-01
JP7597947B2 (ja) 2024-12-10
JP2025023083A (ja) 2025-02-14
KR20230170905A (ko) 2023-12-19
WO2022225544A1 (en) 2022-10-27
CN116997863A (zh) 2023-11-03
TWI865808B (zh) 2024-12-11
KR102733393B1 (ko) 2024-11-21
US11726410B2 (en) 2023-08-15
JP2024518226A (ja) 2024-05-01
US20220334501A1 (en) 2022-10-20

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