KR102733393B1 - 멀티-해상도 오버레이 계측 타깃 - Google Patents

멀티-해상도 오버레이 계측 타깃 Download PDF

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KR102733393B1
KR102733393B1 KR1020237032335A KR20237032335A KR102733393B1 KR 102733393 B1 KR102733393 B1 KR 102733393B1 KR 1020237032335 A KR1020237032335 A KR 1020237032335A KR 20237032335 A KR20237032335 A KR 20237032335A KR 102733393 B1 KR102733393 B1 KR 102733393B1
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target
sub
features
layer
overlay
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KR20230170905A (ko
Inventor
에이탄 하자즈
암논 마나쎈
슐로모 에이센바흐
안나 골로츠반
요아브 그라우어
유진 마슬로브스키
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Physical Vapour Deposition (AREA)
KR1020237032335A 2021-04-20 2021-08-10 멀티-해상도 오버레이 계측 타깃 Active KR102733393B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163176888P 2021-04-20 2021-04-20
US63/176,888 2021-04-20
US17/351,137 2021-06-17
US17/351,137 US11726410B2 (en) 2021-04-20 2021-06-17 Multi-resolution overlay metrology targets
PCT/US2021/045292 WO2022225544A1 (en) 2021-04-20 2021-08-10 Multi-resolution overlay metrology targets

Publications (2)

Publication Number Publication Date
KR20230170905A KR20230170905A (ko) 2023-12-19
KR102733393B1 true KR102733393B1 (ko) 2024-11-21

Family

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KR1020237032335A Active KR102733393B1 (ko) 2021-04-20 2021-08-10 멀티-해상도 오버레이 계측 타깃

Country Status (6)

Country Link
US (1) US11726410B2 (https=)
JP (2) JP7597947B2 (https=)
KR (1) KR102733393B1 (https=)
CN (1) CN116997863B (https=)
TW (1) TWI865808B (https=)
WO (1) WO2022225544A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102875946B1 (ko) * 2021-11-27 2025-10-23 케이엘에이 코포레이션 회절 기반 오버레이 오차 계측을 위한 개선된 타겟
KR102554833B1 (ko) * 2023-02-14 2023-07-13 (주)오로스 테크놀로지 오버레이 계측 장치 및 오버레이 계측 방법
CN116991032A (zh) * 2023-07-19 2023-11-03 南方科技大学 一种极紫外光刻胶性能检测装置及方法
CN119725327B (zh) * 2025-02-28 2025-06-06 荣芯半导体(宁波)有限公司 一种对准标记版图及其操作方法

Citations (4)

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US20130107259A1 (en) * 2011-11-01 2013-05-02 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US20160179017A1 (en) * 2014-06-21 2016-06-23 Kla-Tencor Corporation Compound imaging metrology targets
WO2017055106A1 (en) 2015-09-30 2017-04-06 Asml Netherlands B.V. Metrology method, target and substrate
US20200348125A1 (en) 2014-08-29 2020-11-05 Asml Netherlands B.V. Metrology method, target and substrate

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EP1314198B1 (en) * 2000-08-30 2017-03-08 KLA-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6778275B2 (en) 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US20040066517A1 (en) 2002-09-05 2004-04-08 Hsu-Ting Huang Interferometry-based method and apparatus for overlay metrology
US7440105B2 (en) 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
JP4538782B2 (ja) * 2004-01-09 2010-09-08 株式会社ニコン 撮像装置
US7065737B2 (en) * 2004-03-01 2006-06-20 Advanced Micro Devices, Inc Multi-layer overlay measurement and correction technique for IC manufacturing
KR100612410B1 (ko) 2005-08-01 2006-08-16 나노메트릭스코리아 주식회사 오버레이 키, 이를 이용한 오버레이 측정방법 및 측정장치
JP2013120872A (ja) * 2011-12-08 2013-06-17 Toshiba Corp 重ね合わせ計測方法
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
KR102094974B1 (ko) 2013-03-08 2020-03-30 삼성전자주식회사 오버레이 계측 방법
KR102295507B1 (ko) * 2014-08-29 2021-09-01 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법, 타겟 및 기판
CN109478023B (zh) * 2016-07-15 2021-09-10 Asml荷兰有限公司 用于量测目标场的设计的方法和设备
WO2018033342A1 (en) * 2016-08-17 2018-02-22 Asml Netherlands B.V. Substrate measurement recipe design of, or for, a target including a latent image
EP3321738A1 (en) * 2016-11-10 2018-05-16 ASML Netherlands B.V. Method of measuring a parameter of a device manufacturing process, metrology apparatus, substrate, target, device manufacturing system, and device manufacturing method
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130107259A1 (en) * 2011-11-01 2013-05-02 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US20160179017A1 (en) * 2014-06-21 2016-06-23 Kla-Tencor Corporation Compound imaging metrology targets
US20200348125A1 (en) 2014-08-29 2020-11-05 Asml Netherlands B.V. Metrology method, target and substrate
WO2017055106A1 (en) 2015-09-30 2017-04-06 Asml Netherlands B.V. Metrology method, target and substrate

Also Published As

Publication number Publication date
TW202305512A (zh) 2023-02-01
CN116997863B (zh) 2024-05-24
JP7597947B2 (ja) 2024-12-10
JP2025023083A (ja) 2025-02-14
KR20230170905A (ko) 2023-12-19
WO2022225544A1 (en) 2022-10-27
CN116997863A (zh) 2023-11-03
TWI865808B (zh) 2024-12-11
US11726410B2 (en) 2023-08-15
JP2024518226A (ja) 2024-05-01
US20220334501A1 (en) 2022-10-20

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