CN116996026B - Filtering self-mixer - Google Patents
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- CN116996026B CN116996026B CN202311243763.4A CN202311243763A CN116996026B CN 116996026 B CN116996026 B CN 116996026B CN 202311243763 A CN202311243763 A CN 202311243763A CN 116996026 B CN116996026 B CN 116996026B
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- 238000001914 filtration Methods 0.000 title claims abstract description 25
- 230000008878 coupling Effects 0.000 claims abstract description 34
- 238000010168 coupling process Methods 0.000 claims abstract description 34
- 238000005859 coupling reaction Methods 0.000 claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 30
- 230000009291 secondary effect Effects 0.000 claims abstract description 15
- 239000003990 capacitor Substances 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 8
- 235000019687 Lamb Nutrition 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 230000002452 interceptive effect Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 230000002618 waking effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000013461 design Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
Abstract
The present disclosure provides a filtered self-mixer comprising: the micro-electromechanical resonator comprises an input signal end, an energy detection circuit unit, a bias voltage unit, a coupling branch unit and a micro-electromechanical resonator branch. The input signal end is used for receiving the wake-up signal and the interference signal as input signals; the energy detection circuit unit comprises at least one CMOS tube and is used for mixing an input signal through a secondary effect and outputting a baseband signal; the bias voltage unit is used for providing the grid voltage of the CMOS tube so as to adjust the channel impedance of the CMOS tube; the coupling branch unit is arranged between the input signal end and the energy detection circuit unit and is used for coupling the input signal to the drain electrode or the source electrode of the CMOS tube in the energy detection circuit unit; the micro-electromechanical resonator branch is arranged between the input signal end and the bias voltage unit, and can output different grid signals under different frequencies to adjust the secondary effect, so that the filtering of interference signals in the input signals is realized.
Description
Technical Field
The present disclosure relates to the field of radio frequency wireless communications, and in particular, to a filtering self-mixer for waking up a receiver.
Background
The wake-up receiver can monitor the channel with extremely low power consumption, and wake-up the main receiver when the wake-up receiver receives the wake-up signal, so that the standby power consumption of the wireless communication system can be reduced.
With the development of wireless communication technology, wake-up receivers require lower power consumption, higher sensitivity and higher interference immunity. In order to eliminate the high power consumption (> 20 microwatts) introduced by the oscillator, low power wake-up receivers often employ self-mixing architectures to down-convert the radio frequency signals, thereby reducing the system power consumption below microwatts. The existing self-mixer can down-convert all input signals in the front-stage passband to baseband, and the self-mixing output spectrum of interference and signals can be aliased and indistinguishable at baseband. Therefore, the traditional low-power wake-up receiver is difficult to suppress the interference signals in the passband of the front-end circuit, and the anti-interference capability of the traditional low-power wake-up receiver depends on the passband bandwidth and the out-of-band suppression of the front-end circuit.
The radio frequency passband bandwidth of the wake-up receiver is primarily dependent on the matching or filtering network. The matching network based on the off-chip high-Q-value inductor has lower loss, lower power consumption and higher sensitivity, and the relative fractional bandwidth is large (about 10 percent), so the anti-interference capability is poor. To reduce the bandwidth of the system, a filter based on microelectromechanical resonators may be inserted into the inductive matching network or a matching network with off-chip rf microelectromechanical resonators as the core may be employed. Thanks to the high Q (> 1000) of the microelectromechanical resonator, the relative fractional bandwidth of the system can be greatly reduced (about 0.5%). But its out-of-band rejection (about 20 dB) is not sufficient to reject larger out-of-band interfering signals, while being limited by the high loss of MEMS resonators, which are inferior to inductive matching networks in power consumption and sensitivity.
In summary, the anti-interference capability of the conventional low-power wake-up receiver depends on the bandwidth and the out-of-band rejection of the previous filtering matching network, but the bandwidth and the out-of-band rejection capability of the current filtering matching network are insufficient, and the existing self-mixer structure cannot provide filtering, so that the anti-interference capability of the wake-up receiver is limited.
Disclosure of Invention
First, the technical problem to be solved
Based on the above-mentioned problems, the present disclosure provides a filtering self-mixer for waking up a receiver to alleviate the above-mentioned technical problems in the prior art, and by introducing a microelectromechanical resonator in a self-mixer circuit, the self-mixer has excellent filtering performance (bandwidth <0.5%, out-of-band rejection >50 dB) while down-converting an input signal, thereby improving anti-interference performance of waking up the receiver.
(II) technical scheme
The present disclosure provides a filtered self-mixer comprising: the micro-electromechanical resonator comprises an input signal end, an energy detection circuit unit, a bias voltage unit, a coupling branch unit and a micro-electromechanical resonator branch. The input signal end is used for receiving the wake-up signal and the interference signal as input signals; the energy detection circuit unit comprises at least one CMOS tube and is used for mixing an input signal through a secondary effect and outputting a baseband signal; the bias voltage unit is used for providing the grid voltage of the CMOS tube so as to adjust the channel impedance of the CMOS tube; the coupling branch unit is arranged between the input signal end and the energy detection circuit unit and is used for coupling the input signal to the drain electrode or the source electrode of the CMOS tube in the energy detection circuit unit; the micro-electromechanical resonator branch is arranged between the input signal end and the bias voltage unit, and can output different grid signals under different frequencies to adjust the secondary effect, so that the filtering of interference signals in the input signals is realized.
According to an embodiment of the present disclosure, the energy detection circuit is a triode-type energy detection circuit, and the CMOS transistor in the energy detection circuit unit is selected from an N-type CMOS transistor and a P-type CMOS transistor.
According to an embodiment of the disclosure, the bias voltage unit comprises at least one bias voltage branch, and each bias voltage branch comprises a bias voltage source and a bias resistor which are sequentially connected.
According to an embodiment of the present disclosure, the coupling-leg unit comprises at least one coupling leg, each coupling leg comprising a coupling capacitance connected to the input signal terminal, said coupling capacitance being connected to the drain or source of the corresponding CMOS transistor.
According to an embodiment of the present disclosure, a microelectromechanical resonator branch includes a microelectromechanical resonator, a dc blocking capacitance. One end of the micro-electromechanical resonator is connected to the input signal end, and the other end is connected to the grid electrode of the CMOS tube; the blocking capacitor is connected with the micro-electromechanical resonator and is used for isolating the direct current level of the CMOS tube.
According to an embodiment of the present disclosure, the filter self-mixer relative fractional bandwidth is <0.5%, out-of-band rejection >40Db; the operating frequency of the filtered self-mixer is the anti-resonant frequency of the microelectromechanical resonator.
According to the embodiment of the disclosure, when the frequency of the interference signal in the input signal is far away from the anti-resonant frequency, the micro-electromechanical resonator is equivalent to an equivalent capacitance, and the capacitance of the equivalent capacitance is adjusted by adjusting the geometry of the resonator so as to adjust the size of the gate signal coupled to the gate of the CMOS transistor, so that the secondary effects of the gate and the drain or the drain of the transistor cancel each other, and therefore, the baseband signal is not output.
According to an embodiment of the present disclosure, the microelectromechanical resonator is of a type selected from the group consisting of thin film bulk acoustic resonators, laterally vibrating piezoelectric resonators, bulk acoustic resonators, surface acoustic wave resonators, lamb wave resonators, shear piezoelectric resonators, and quartz crystal resonators.
According to an embodiment of the present disclosure, the CMOS tube arrangement in the energy detection circuit unit includes a single stage form, a multi-stage cascade form, or a multi-stage cascade form of pseudo-differential form.
According to embodiments of the present disclosure, the bias voltage source provides a gate dc bias voltage through a gate voltage bias circuit or through the drain or source of a transistor.
(III) beneficial effects
As can be seen from the above technical solutions, the filtering self-mixer of the present disclosure has at least one or a part of the following advantages:
(1) The micro electromechanical resonator is utilized to present different impedance characteristics at different frequencies, so that narrow-band filtering is realized on the self-mixer, and the anti-interference capability of a wake-up receiver is improved;
(2) The mode of counteracting the secondary effect of the grid electrode and the drain electrode of the transistor is used for realizing extremely high out-of-band rejection and improving the rejection of the wake-up receiver on out-of-band interference;
(3) The filter self-mixer has the characteristics of narrow band and high out-of-band rejection, so that the anti-interference performance of a wake-up receiver based on the filter self-mixer is not dependent on a preceding-stage matching network; therefore, the matching network can adopt a topological structure with higher bandwidth and lower loss and circuit parameters, and the sensitivity of the wake-up receiver is improved under the condition of not reducing the anti-interference capability;
(4) The self-filtering mixer works at the anti-resonance frequency of the micro-electromechanical resonator, and the Q value of the anti-resonance frequency of the radio-frequency micro-electromechanical resonator is higher than the Q value of the resonance frequency, so that compared with a filtering mode working at the resonance frequency of the micro-electromechanical resonator, the Q value of the filtering mode is higher, the passband is narrower, and the anti-interference capability is better.
Drawings
Fig. 1 is a circuit schematic diagram of a filtered self-mixer according to an embodiment of the present disclosure.
Fig. 2 is a circuit schematic diagram of a conventional self-mixer.
Detailed Description
The present disclosure provides a filtered self-mixer that includes CMOS transistors for providing a secondary effect to self-mix an input signal; the micro-electromechanical resonator enables the filter self-mixer to have a filter characteristic of narrow-band and high out-of-band rejection through the change of impedance under different frequencies; coupling capacitors couple the input signals to corresponding CMOS transistors; the bias resistor biases the gate voltage of the transistor; the blocking capacitor is used for isolating the DC levels of the different transistors. The filter self-mixer of the present disclosure has a low passband bandwidth (< 0.5%) while having extremely high out-of-band rejection capability (> 40 dB). The operating frequency is the antiresonant frequency of the filter.
In carrying out the present disclosure, the inventors have found that existing self-mixer structures (a typical four-stage self-mixer structure as shown in fig. 2) pass through a coupling capacitor C C An AC input signal is input to the drain electrode of the CMOS tube of the energy detection circuit unit, and the secondary effect of the weak inversion region transistor is utilized for mixing to generate a corresponding baseband output signal (V ed Out) to self-mix the input signal to baseband. The gate of the transistor is connected to a suitable gate voltage (V shown in fig. 2 GN 、V GP ) To adjust the channel resistance of the transistor to match the pre-stage circuit. In the passband of the pre-stage circuit, the impedance of the coupling capacitor is far smaller than the channel resistance of the transistor, so that the input resistance and the drain electrode of the transistor are equivalently in AC short circuit. Any signal within the passband of the front-end circuitry is mixed by the CMOS transistors and outputs a baseband signal. Therefore, the existing self-mixer does not have a filtering function. In addition, since the out-of-band rejection of the filter matching network of the microelectromechanical resonator is generally based on the existing self-mixingThe wake-up receiver of the frequency device is also not effective in suppressing the higher power out-of-band interference signal.
Thus, the present disclosure provides a filtered self-mixer that has both a low passband bandwidth (< 0.5%) and an extremely high out-of-band rejection capability (> 40 dB).
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
In an embodiment of the present disclosure, there is provided a filtered self-mixer, as shown in fig. 1, including: input signal terminal IN, energy detection circuit unit 10, bias voltage unit, coupling branching unit, microelectromechanical resonator branch. The input signal end IN is used for receiving a wake-up signal and an interference signal as input signals; the energy detection circuit unit 10 includes at least one CMOS tube, preferably 30 to 50 CMOS tubes, four CMOS tubes in fig. 1, four CMOS tubes of an N-type CMOS tube 11, a P-type CMOS tube 12, an N-type CMOS tube 13, and a P-type CMOS tube 14, which are sequentially connected. The energy detection circuit unit 10 is used for mixing input signals through the secondary effect of the CMOS tube and outputting baseband signals; the bias voltage unit is used for providing the grid voltage of the CMOS tube so as to adjust the channel impedance of the CMOS tube; the coupling branch unit is arranged between the input signal end and the energy detection circuit unit, and is used for coupling the input signal to the drain electrodes or the source electrodes of the CMOS tubes in the energy detection circuit unit, and as shown in fig. 1, the input signal is respectively coupled to the drain electrodes of the four CMOS tubes through a coupling capacitor C1 and a coupling capacitor C2; the micro-electromechanical resonator branch is arranged between the input signal end IN and the bias voltage unit and the energy detection circuit unit 10, and can output different grid signals under different frequencies to adjust the secondary effect, so as to realize the filtering of interference signals IN the input signals. A coupling capacitor C is also connected between the signal output terminal OUT and the source of the N-type CMOS tube 11 C And the sources of the N-type CMOS tube 11 and the P-type CMOS tube 12 are connected with a coupling capacitor C C And is grounded. The source of the P-type CMOS transistor 14 is connected to a common mode level VC.
According to the embodiment of the disclosure, the energy detection circuit is a triode type energy detection circuit, and the CMOS tube in the energy detection circuit unit is selected from an N type CMOS tube and a P type CMOS tube; the CMOS tube arrangement in the energy detection circuit unit includes a single-stage form, a multi-stage cascade form or a multi-stage cascade form of pseudo-differential form. When both the N-type CMOS transistor and the P-type CMOS transistor are present, the N-type CMOS transistor and the P-type CMOS transistor are alternately connected, for example, in the form of N-P-N-P or P-N-P-N connection.
According to an embodiment of the disclosure, the bias voltage unit comprises at least one bias voltage branch, and each bias voltage branch comprises a bias voltage source and a bias resistor which are sequentially connected. As shown in fig. 1, the bias voltage unit includes two bias voltage branches, which are bias voltage sources V for providing gate voltages to two N-type CMOS transistors 11 and 13 GN And bias voltage source V GN Connected bias resistor R B1 The method comprises the steps of carrying out a first treatment on the surface of the And a bias voltage source V providing a gate voltage to the two P-type CMOS transistors 12, 14 GP And bias voltage source V GP Connected bias resistor R B2 。
According to an embodiment of the present disclosure, the coupling-leg unit comprises at least one coupling leg, each coupling leg comprising a coupling capacitance connected to the input signal terminal, said coupling capacitance being connected to the drain or source of the corresponding CMOS transistor. As shown IN fig. 1, the coupling-arm unit includes two coupling arms, one of which has one end connected to the input signal terminal IN and the other end connected to the drains of the N-type CMOS pipe 11 and the P-type CMOS pipe 12 through a coupling capacitor C1; the other coupling branch is connected to the input signal terminal IN at one end and to the drains of the N-type CMOS tube 13 and the P-type CMOS tube 14 via a coupling capacitor C2 at the other end.
According to an embodiment of the present disclosure, the microelectromechanical resonator branch includes a microelectromechanical resonator 21, a blocking capacitor 22. One end of the microelectromechanical resonator 21 is connected to the input signal terminal IN, and the other end is connected to the gate of the CMOS pipe, as shown IN fig. 1, and the other end of the microelectromechanical resonator 21 is connected to the gates of the N-type CMOS pipe 11, 13; one end of the blocking capacitor 22 is connected with the micro-electromechanical resonator 21, and the two ends are connected to the grid electrode of the CMOS tube for isolating the direct current level of the CMOS tube. As shown in fig. 1, the other end of the blocking capacitor 22 is connected to the gate of the P-type CMOS transistor 12, 14.
According to an embodiment of the present disclosure, the filter self-mixer relative fractional bandwidth is <0.5%, out-of-band rejection >40Db; the operating frequency of the filtered self-mixer is the anti-resonant frequency of the microelectromechanical resonator.
According to the embodiment of the disclosure, when the frequency of the interference signal in the input signal is far away from the anti-resonant frequency of the microelectromechanical resonator 21, the microelectromechanical resonator 21 corresponds to an equivalent capacitance, and the capacitance of the equivalent capacitance is adjusted by adjusting the geometry of the resonator so as to adjust the size of the gate signal coupled to the gate of the CMOS transistor, so that the secondary effects of the gate and the drain or the drain of the transistor cancel each other, and thus the baseband signal is not output.
According to an embodiment of the present disclosure, the type of microelectromechanical resonator 21 is selected from the group consisting of thin film bulk acoustic resonators, laterally vibrating piezoelectric resonators, bulk acoustic resonators, surface acoustic wave resonators, lamb wave resonators, shear piezoelectric resonators, quartz crystal resonators.
According to an embodiment of the present disclosure, a bias voltage source (V GN、 V GP ) The gate dc bias voltage may be provided by a gate voltage bias circuit or may be provided by the drain or source of a transistor.
According to the embodiment of the disclosure, as shown in fig. 1, the number of stages of the self-mixer is 4 (i.e. the number of cascaded CMOS transistors is 4), and other stages, preferably 30 stages or 40 stages, may be used in practical application, and a pseudo-differential cascade manner may also be used. A microelectromechanical resonator 21 is introduced between the gate and drain of the CMOS transistor and adjusts and blocks the channel resistance of the transistor by means of a bias resistor and a blocking capacitor. The rf microelectromechanical resonator 21 exhibits high-impedance characteristics near the anti-resonant frequency, and the filtered self-mixer is equivalent to a conventional self-mixer. Outside the antiresonant frequency, the impedance of the microelectromechanical resonator decreases, which reduces the input impedance from the mixer, destroying the matching conditions with the previous stage, reducing the input signal size from the mixer. Thus, the input signal of the same magnitude, the output signal generated by the input at the antiresonant frequency is larger than the other frequencies, and the self-mixer achieves the filtering effect. Because the Q of the microelectromechanical resonator is higher at the antiresonant frequency, a lower passband bandwidth is achieved. At a distance from the antiresonance frequency, the resonator is equivalent to a capacitor, and the capacitance of the equivalent capacitor can be adjusted by adjusting the geometry of the resonator. By adjusting the capacitance value, the magnitude of the signal coupled to the gate of the CMOS transistor can be adjusted, so that the secondary effects of the gate and the drain of the transistor are mutually offset, and the output signal of the baseband is not generated. The input signal at a distance from the antiresonant frequency produces little output signal.
In summary, the filtered self-mixer has a low passband bandwidth (< 0.5%) while having very high out-of-band rejection capability (> 40 dB). The operating frequency is the antiresonant frequency of the filter. Simulation of the output of normalized input signals with different frequencies shows that the filtering self-mixer can realize the filtering with high Q value and high out-of-band rejection while self-mixing. The anti-interference capability, the sensitivity and the robustness of the wake-up receiver are improved.
Thus, embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It should be noted that, in the drawings or the text of the specification, implementations not shown or described are all forms known to those of ordinary skill in the art, and not described in detail. Furthermore, the above definitions of the elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and may be simply modified or replaced by those of ordinary skill in the art.
From the above description, one skilled in the art should clearly recognize the filtering self-mixer of the present disclosure.
In summary, the present disclosure provides a filtered self-mixer by incorporating a microelectromechanical resonator in the self-mixer circuit. The down-conversion of the input signal is performed, and meanwhile, the down-conversion has excellent filtering performance (bandwidth <0.5%, out-of-band rejection >50 dB), so that the anti-interference performance of the wake-up receiver is improved.
It should also be noted that the foregoing describes various embodiments of the present disclosure. These examples are provided to illustrate the technical content of the present disclosure, and are not intended to limit the scope of the claims of the present disclosure. A feature of one embodiment may be applied to other embodiments by suitable modifications, substitutions, combinations, and separations.
It should be noted that in this document, having "an" element is not limited to having a single element, but may have one or more elements unless specifically indicated.
In this context, the so-called feature A "or" (or) or "and/or" (and/or) feature B, unless specifically indicated, refers to the presence of B alone, or both A and B; the feature A "and" (and) or "AND" (and) or "and" (and) feature B, means that the nail and the B coexist; the terms "comprising," "including," "having," "containing," and "containing" are intended to be inclusive and not limited to.
In addition, unless specifically stated otherwise, herein, "first," "second," etc. are used for distinguishing between multiple elements having the same name and not for indicating a level, a hierarchy, an order of execution, or a sequence of processing. A "first" element may occur together with a "second" element in the same component, or may occur in different components. The presence of an element with a larger ordinal number does not necessarily indicate the presence of another element with a smaller ordinal number.
Further, in this document, terms such as "upper," "lower," "left," "right," "front," "back," or "between" are used merely to describe relative positions between elements and are expressly intended to encompass situations of translation, rotation, or mirroring. In addition, in this document, unless specifically indicated otherwise, "an element is on another element" or similar recitation does not necessarily mean that the element contacts the other element.
Furthermore, unless specifically described or steps must occur in sequence, the order of the above steps is not limited to the list above and may be changed or rearranged according to the desired design. In addition, the above embodiments may be mixed with each other or other embodiments based on design and reliability, i.e. the technical features of the different embodiments may be freely combined to form more embodiments.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (10)
1. A filtered self-mixer, comprising:
the input signal end is used for receiving wake-up signals and interference signals as input signals;
the energy detection circuit unit is composed of at least one CMOS tube and is used for mixing an input signal through a secondary effect and outputting a baseband signal;
a bias voltage unit for providing a gate voltage of the CMOS tube to adjust a channel impedance of the CMOS tube;
the coupling branch unit is arranged between the input signal end and the energy detection circuit unit and is used for coupling the input signal to the drain electrode or the source electrode of the CMOS tube in the energy detection circuit unit; and
the micro-electromechanical resonator branch is arranged between the input signal end and the output end of the bias voltage unit, and can output different grid signals under different frequencies to adjust the secondary effect, so that the filtering of interference signals in the input signals is realized.
2. The filtering self-mixer of claim 1, the energy detection circuit being a triode-type energy detection circuit, the CMOS tubes in the energy detection circuit unit being selected from the group consisting of N-type CMOS tubes and P-type CMOS tubes.
3. The filtered self-mixer of claim 2, the bias voltage unit comprising at least one bias voltage branch, each bias voltage branch comprising a bias voltage source and a bias resistor connected in sequence.
4. The filtered self-mixer of claim 2, the coupling-leg unit comprising at least one coupling leg, each coupling leg comprising a coupling capacitance connected to an input signal terminal, the coupling capacitance being connected to a drain or source of a corresponding CMOS tube.
5. The filtered self-mixer of claim 4, the microelectromechanical resonator leg comprising:
one end of the micro-electromechanical resonator is connected to the input signal end, and the other end of the micro-electromechanical resonator is connected to the grid electrode of the CMOS tube; and
and the blocking capacitor is connected with the micro-electromechanical resonator and is used for isolating the direct current level of the CMOS tube.
6. The filtered self-mixer of claim 1 having a relative fractional bandwidth <0.5%, out-of-band rejection capability >40Db; the operating frequency of the filtered self-mixer is the anti-resonant frequency of the microelectromechanical resonator.
7. The self-mixer of claim 1, wherein the mems resonator corresponds to an equivalent capacitance when the frequency of the interfering signal in the input signal is far from the antiresonant frequency, and the capacitance of the equivalent capacitance is adjusted by adjusting the geometry of the resonator to adjust the magnitude of the gate signal coupled to the gate of the CMOS transistor, so that the secondary effects of the gate and the drain or the drain of the transistor cancel each other, and the baseband signal is not output.
8. The filtered self-mixer of claim 5, the microelectromechanical resonator being of a type selected from the group consisting of thin film bulk acoustic resonators, laterally vibrating piezoelectric resonators, bulk acoustic resonators, surface acoustic wave resonators, lamb wave resonators, shear piezoelectric resonators, and quartz crystal resonators.
9. The filtered self-mixer of claim 1, the CMOS tube setup form in the energy detection circuit unit comprising a single stage form, a multi-stage cascade form, or a multi-stage cascade form of pseudo-differential form.
10. The filtered self-mixer of claim 3, the bias voltage source providing a gate dc bias voltage through a gate voltage bias circuit or through a drain or source of a transistor.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991020125A1 (en) * | 1990-06-18 | 1991-12-26 | Harris Corporation | Low offset unity gain buffer amplifier |
| JP2000068750A (en) * | 1998-08-21 | 2000-03-03 | Nec Corp | Mos mixer circuit |
| JP2006074380A (en) * | 2004-09-01 | 2006-03-16 | Renesas Technology Corp | Frequency mixer |
| CN101110568A (en) * | 2006-07-18 | 2008-01-23 | 联华电子股份有限公司 | Sub-harmonic mixer and down converter with the same |
| CN102096079A (en) * | 2009-12-12 | 2011-06-15 | 杭州中科微电子有限公司 | Method for constructing radio frequency front end of multi-mode multi-band satellite navigation receiver and module thereof |
| CN102714499A (en) * | 2010-01-21 | 2012-10-03 | 拉姆伯斯公司 | Phase detection circuits and methods |
| CN106603014A (en) * | 2016-12-28 | 2017-04-26 | 杭州迦美信芯通讯技术有限公司 | Low-power low-cost and high-linearity voltage mode passive mixer |
| CN106992754A (en) * | 2017-03-02 | 2017-07-28 | 电子科技大学 | A kind of multi-functional frequency mixer of fixed intermediate frequency output |
| CN212649430U (en) * | 2020-07-23 | 2021-03-02 | 广州优米网络科技有限公司 | Voltage comparator circuit |
| CN114614845A (en) * | 2022-04-02 | 2022-06-10 | 中国科学技术大学 | Wake-up receiver |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004019366B4 (en) * | 2004-04-21 | 2006-05-04 | Infineon Technologies Ag | Circuit arrangement for a broadband mixer with predistortion and high linearity and method for broadband mixing |
| US8041327B2 (en) * | 2006-03-16 | 2011-10-18 | Newport Media, Inc. | Wideband resistive input mixer with noise-cancelled impedance |
-
2023
- 2023-09-26 CN CN202311243763.4A patent/CN116996026B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991020125A1 (en) * | 1990-06-18 | 1991-12-26 | Harris Corporation | Low offset unity gain buffer amplifier |
| JP2000068750A (en) * | 1998-08-21 | 2000-03-03 | Nec Corp | Mos mixer circuit |
| JP2006074380A (en) * | 2004-09-01 | 2006-03-16 | Renesas Technology Corp | Frequency mixer |
| CN101110568A (en) * | 2006-07-18 | 2008-01-23 | 联华电子股份有限公司 | Sub-harmonic mixer and down converter with the same |
| CN102096079A (en) * | 2009-12-12 | 2011-06-15 | 杭州中科微电子有限公司 | Method for constructing radio frequency front end of multi-mode multi-band satellite navigation receiver and module thereof |
| CN102714499A (en) * | 2010-01-21 | 2012-10-03 | 拉姆伯斯公司 | Phase detection circuits and methods |
| CN106603014A (en) * | 2016-12-28 | 2017-04-26 | 杭州迦美信芯通讯技术有限公司 | Low-power low-cost and high-linearity voltage mode passive mixer |
| CN106992754A (en) * | 2017-03-02 | 2017-07-28 | 电子科技大学 | A kind of multi-functional frequency mixer of fixed intermediate frequency output |
| CN212649430U (en) * | 2020-07-23 | 2021-03-02 | 广州优米网络科技有限公司 | Voltage comparator circuit |
| CN114614845A (en) * | 2022-04-02 | 2022-06-10 | 中国科学技术大学 | Wake-up receiver |
Non-Patent Citations (1)
| Title |
|---|
| 直接变频超宽带接收机中的低压折叠开关混频器;申华;刘乾坤;杨立吾;吕昕;;北京理工大学学报(第08期);全文 * |
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| CN116996026A (en) | 2023-11-03 |
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