CN116995072A - Display backboard, manufacturing method and transferring method thereof - Google Patents

Display backboard, manufacturing method and transferring method thereof Download PDF

Info

Publication number
CN116995072A
CN116995072A CN202311256264.9A CN202311256264A CN116995072A CN 116995072 A CN116995072 A CN 116995072A CN 202311256264 A CN202311256264 A CN 202311256264A CN 116995072 A CN116995072 A CN 116995072A
Authority
CN
China
Prior art keywords
light
emitting chip
layer
driving electrode
photoresistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202311256264.9A
Other languages
Chinese (zh)
Other versions
CN116995072B (en
Inventor
张建英
谢俊烽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HKC Co Ltd
Original Assignee
HKC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HKC Co Ltd filed Critical HKC Co Ltd
Priority to CN202311256264.9A priority Critical patent/CN116995072B/en
Publication of CN116995072A publication Critical patent/CN116995072A/en
Application granted granted Critical
Publication of CN116995072B publication Critical patent/CN116995072B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Abstract

The application discloses a display backboard, a manufacturing method and a transferring method thereof. The display backboard comprises a substrate, a light-transmitting adhesive layer, a driving electrode, a thermoelectric refrigerating layer and a photoresistor, wherein the substrate is provided with two driving electrodes which are arranged at intervals, the thermoelectric refrigerating layer and the photoresistor are electrically connected with the driving electrodes, and the driving electrodes, the thermoelectric refrigerating layer and the photoresistor form a switch loop; the anode of the light-emitting chip is in butt joint with one driving electrode, and the cathode of the light-emitting chip is in butt joint with the other driving electrode; the light-transmitting adhesive layer is at least positioned between the light-emitting chip and the substrate and at least covers part of the surface of the thermoelectric refrigerating layer; when the light-emitting chip is abnormally non-illuminated, the resistance value of the corresponding photoresistor is increased to enable the switch loop to be disconnected, the temperature of the thermoelectric refrigerating layer is increased, and the light-transmitting adhesive layer is in a molten state so as to lose the fixation of the abnormally light-emitting chip. According to the technical scheme, the abnormal light-emitting chips can be effectively picked up, and the production efficiency is improved.

Description

Display backboard, manufacturing method and transferring method thereof
Technical Field
The application belongs to the technical field of display, and particularly relates to a display backboard, a manufacturing method and a transferring method thereof.
Background
Micro light emitting chips such as Micro LEDs (Micro Light Emitting Diode Display, micro light emitting diodes) or Mini LEDs are increasingly used in display panels. As the size of the micro device is smaller and smaller, the micro device can obtain higher integration quantity on the driving substrate with the same area, thereby improving the display effect.
However, the display back plate may have a light emitting chip with good performance and abnormal performance at the same time, thereby affecting the display effect. In addition, as the number of the light emitting chips is large, the difficulty of screening out micro devices with good performance is high, and the efficiency is low.
Disclosure of Invention
The application aims to provide a display backboard, a manufacturing method and a transferring method thereof, which can effectively pick up abnormal light-emitting chips and improve display effect.
Other features and advantages of the application will be apparent from the following detailed description, or may be learned by the practice of the application.
According to an aspect of an embodiment of the present application, there is provided a display back plate including:
the thermoelectric refrigerating device comprises a substrate, wherein two driving electrodes are arranged at intervals on the substrate, a thermoelectric refrigerating layer and a photoresistor are electrically connected with the driving electrodes, and the driving electrodes, the thermoelectric refrigerating layer and the photoresistor form a switching loop;
the anode of the light-emitting chip is in butt joint with one driving electrode, and the cathode of the light-emitting chip is in butt joint with the other driving electrode;
the light-transmitting adhesive layer is at least positioned between the light-emitting chip and the substrate and at least covers part of the surface of the thermoelectric refrigerating layer;
wherein, when the driving electrode is electrified,
the normal light-emitting chip emits light and lights up, the corresponding resistance value of the photoresistor is reduced to enable the switch loop to be conducted, the thermoelectric refrigeration layer is communicated with the driving electrode and used for refrigerating, and the light-transmitting adhesive layer at the corresponding position of the normal light-emitting chip is in a solidification state so as to fix the normal light-emitting chip;
the abnormal light-emitting chip is extinguished, the corresponding resistance value of the photoresistor is increased to enable the switch loop to be disconnected, the thermoelectric refrigerating layer is disconnected and connected with the driving electrode, the light-transmitting adhesive layer at the corresponding position of the abnormal light-emitting chip is in a molten state, and the abnormal light-emitting chip is not fixed.
In one aspect, one thermoelectric refrigerating layer is arranged, two photoresistors are arranged, the two photoresistors are respectively arranged between the driving electrode and the thermoelectric refrigerating layer, one end of each photoresistor is connected with the driving electrode, and the other end of each photoresistor is connected with the thermoelectric refrigerating layer.
In one aspect, the thermoelectric cooling layer comprises a leveling layer, the leveling layer is arranged between the two driving electrodes, and the center of the leveling layer coincides with the center of the two driving electrodes.
In one aspect, the thermoelectric cooling layer further includes a protrusion disposed on an upper surface of the planarizing layer, the protrusion extending to a side of the planarizing layer facing away from the substrate.
In one aspect, the thermoelectric refrigeration layer is arranged between the substrate and the light-transmitting glue layer, and the photoresistor is arranged between the substrate and the light-transmitting glue layer;
the photoresistor comprises a connecting section, wherein the connecting section is arranged between the driving electrode and the thermoelectric refrigerating layer, one end of the connecting section is connected with the driving electrode, and the other end of the connecting section is connected with the thermoelectric refrigerating layer;
the photoresistor also comprises a first extension section and a second extension section, wherein the first extension section is connected with the connection section and extends along the side wall surface of the driving electrode, and the second extension section is connected with the connection section and extends along the side wall surface of the thermoelectric refrigeration layer;
the photoresistor also comprises a first lap joint section and a second lap joint section, wherein the first lap joint section is arranged on the upper surface of the driving electrode and is connected with the first extension section, and the second lap joint section is arranged on the upper surface of the thermoelectric cooling layer and is connected with the second extension section.
In one aspect, the display back plate further includes a light shielding layer, and the light shielding layer is disposed between the photoresistor and the substrate.
In one aspect, the upper surface of the driving electrode includes a docking area and a spacer area, the spacer area is enclosed in the docking area, and the docking area is used for docking the electrode of the light emitting chip.
In one aspect, two driving electrodes are arranged in parallel, a plurality of detection areas are formed between the two driving electrodes, the detection areas are arranged along the extending direction of the driving electrodes, and one detection area is correspondingly provided with one thermoelectric refrigerating layer.
In addition, in order to solve the above problems, the present application further provides a method for manufacturing a display back plate, where the method for manufacturing a display back plate includes:
forming two spaced driving electrodes on the upper surface of the substrate, wherein one driving electrode is used for butt joint of an anode of the light-emitting chip, and the other driving electrode is used for butt joint of a cathode of the light-emitting chip;
forming a thermoelectric refrigeration layer on the upper surface of the substrate, wherein the thermoelectric refrigeration layer is arranged corresponding to the driving electrode;
forming a photoresistor between the driving electrode and the thermoelectric refrigeration layer, and connecting the photoresistor with the driving electrode and the thermoelectric refrigeration layer to form a switching loop;
and forming a light-transmitting adhesive layer on the upper surface of the driving electrode, and enabling the light-transmitting adhesive layer to at least cover part of the surface of the thermoelectric refrigerating layer.
In addition, in order to solve the above-mentioned problems, the present application also provides a transfer method employing the display back sheet as described above, the transfer method comprising:
butting a growth substrate with a light-emitting chip with a display backboard, enabling electrodes of the light-emitting chip to be inserted into the light-transmitting adhesive layer, butting an anode and a cathode of the light-emitting chip with one driving electrode respectively, stripping the growth substrate, and reserving the light-emitting chip on the display backboard;
heating the display backboard to enable the light-transmitting adhesive layer to be in a molten state;
energizing the driving electrode to enable the anode and the cathode of the light-emitting chip to be respectively energized with current, wherein the light-emitting chip emits light after being energized to be a normal light-emitting chip, and the light-emitting chip does not emit light after being energized to be an abnormal light-emitting chip;
the normal light-emitting chip is lightened and irradiates on the corresponding photoresistor, the resistance value of the corresponding photoresistor is reduced under the action of illumination, so that the switch loop is conducted, the thermoelectric refrigerating layer is communicated with the driving electrode and refrigerates, and the light-transmitting adhesive layer corresponding to the normal light-emitting chip is refrigerated and is in a solidification state;
at the position of the abnormal light-emitting chip, the abnormal light-emitting chip is extinguished, no light irradiates on the corresponding photoresistor, the resistance value of the corresponding photoresistor is increased to enable the switch loop to be disconnected, the thermoelectric refrigerating layer is disconnected and connected with the driving electrode, and the light-transmitting adhesive layer at the position corresponding to the abnormal light-emitting chip is in a molten state;
and moving the transfer substrate with the adhesive layer to the light emitting chip, so that the adhesive layer is adhered to the light emitting chip, wherein the abnormal light emitting chip is adhered and transferred to the transfer substrate.
In the application, when the light-emitting chip is transferred onto the display backboard, the anode and the cathode of the light-emitting chip pass through the light-transmitting glue layer and are respectively connected to the driving electrode. At this time, current flows into the anode and cathode of the light emitting chip. The normal light-emitting chip is lighted and emits light, and the abnormal light-emitting chip is in a extinction state. The photoresistor corresponding to the normal light-emitting chip is subjected to illumination, the resistance value of the photoresistor is reduced, so that the switch loop is conducted, the thermoelectric refrigerating layer is connected with the driving electrode for refrigerating, the light-transmitting adhesive layer at the position corresponding to the normal light-emitting chip is in a solidification state, and the electrode of the normal light-emitting chip is fixed; because the abnormal light-emitting chip is extinguished, the corresponding photoresistor is increased in resistance value, so that the switch loop is disconnected, the thermoelectric refrigerating layer is disconnected and the driving electrode is connected, the light-transmitting adhesive layer at the corresponding position of the abnormal light-emitting chip is in a molten state, and the electrode of the abnormal light-emitting chip is lost to be fixed. Therefore, the normal light-emitting chip and the abnormal light-emitting chip of the display backboard can be distinguished, and the abnormal light-emitting chip can be picked up in an adhesion mode, so that the production efficiency is improved. And after the abnormal light emitting chips are removed, the display dark spots are reduced, and the overall display effect is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application. It is evident that the drawings in the following description are only some embodiments of the present application and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 schematically shows a schematic structure of a display back plate in a first embodiment of the present application.
Fig. 2 schematically illustrates a top view of the drive electrode, thermoelectric cooling layer and photoresistor of fig. 1 in accordance with the present application.
Fig. 3 schematically shows a schematic view of a structure in which a light shielding layer is provided for a display back plate in the present application.
Fig. 4 schematically shows a schematic view of the structure of the back plate-provided shield in the present application.
Fig. 5 schematically shows another construction of the back plate-provided shield of the present application.
Fig. 6 schematically shows a schematic top surface of a drive electrode in accordance with the present application.
Fig. 7 schematically illustrates a flowchart of a method for manufacturing a display back plate according to a second embodiment of the present application.
Fig. 8 schematically shows a schematic structure of the present application in which a conductive layer is provided on a substrate.
Fig. 9 schematically shows a schematic configuration of the present application in which the driving electrode is provided.
Fig. 10 schematically shows a schematic structure of the thermoelectric cooling material layer according to the present application.
Fig. 11 schematically shows a schematic structure of the thermoelectric cooling layer according to the present application.
Fig. 12 schematically shows a schematic structure of the present application in which a photosensitive material layer is provided.
Fig. 13 schematically shows a schematic configuration of the present application in which a photoresistor is provided.
Fig. 14 schematically shows a schematic flow chart of a transfer method according to a third embodiment of the present application.
Fig. 15 schematically shows a structure of the present application in which a growth substrate and a display back plate are opposed to each other.
Fig. 16 schematically illustrates a structure of the lift-off growth substrate of fig. 15 in accordance with the present application.
Fig. 17 schematically illustrates a schematic diagram of the present application in which a transfer substrate and a display back plate are opposed to each other.
Fig. 18 schematically shows a schematic structure of the transfer substrate of the present application for transferring and removing abnormal light emitting chips.
The reference numerals are explained as follows:
10. a substrate; 20. a driving electrode; 21. a conductive layer; 30. a thermoelectric refrigeration layer; 31. a thermoelectric cooling material layer; 40. a photoresistor; 41. a photosensitive material layer; 50. a light-transmitting adhesive layer; 60. a light shielding layer; 61. a shield; 70. a light emitting chip; 71. a normal light emitting chip; 72. an abnormal light emitting chip; 80. growing a substrate; 90. transferring the substrate; 91. an adhesive layer;
210. a butt joint region; 220. a spacer; 301. leveling the layer; 302. a boss; 410. a connection section; 421. a first extension; 422. a second extension; 431. a first overlap section; 432. and a second overlap segment.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art.
Example 1
Referring to fig. 1, 2, 15 and 18, the present application provides a display back plate that can be used to transfer light emitting chips 70. For example, the light emitting chip 70 is first grown on the growth substrate 80, then the light emitting chip 70 on the growth substrate 80 is transferred to the display back plate, and finally transferred from the display back plate to the driving substrate. That is, the display back plate may be used to temporarily store the light emitting chip 70, where the light emitting chip 70 is mainly a Micro LED or a mini LED. The driving substrate may be understood as a structure for driving the light emitting chip to perform light emitting display. In other embodiments, after the abnormal light emitting chip of the display back plate is removed, a normal light emitting chip may be further mounted on the empty position of the display back plate, and thereafter the display back plate may be used for normal display. Further, the display back plate may be understood as a transient substrate that relays the light emitting chips, and may also be understood as a display panel that is directly used for assembly to form a display device.
The display back plate comprises a substrate 10, a light-emitting chip 70 and a light-transmitting adhesive layer 50, wherein the light-transmitting adhesive layer 50 is arranged on the upper surface of the substrate 10. The substrate 10 serves as a support, and the substrate 10 is typically a transparent glass substrate, but may be a plastic substrate or a sapphire substrate. The display back plate further includes: a drive electrode 20, a thermoelectric cooling layer 30 and a photoresistor 40.
The substrate 10 is provided with two driving electrodes 20 arranged at intervals, a thermoelectric refrigerating layer 30 and a photoresistor 40 which are electrically connected with the driving electrodes 20, and the driving electrodes 20, the thermoelectric refrigerating layer 30 and the photoresistor 40 form a switching circuit. That is, the driving electrodes 20 are disposed between the light-transmitting glue layer 50 and the substrate 10, the driving electrodes 20 may be disposed on the upper surface of the substrate 10, two driving electrodes 20 are disposed at intervals, one driving electrode 20 is used for docking the anode of the light-emitting chip 70, and the other driving electrode 20 is used for docking the cathode of the light-emitting chip 70; it will be appreciated that, in order to enable the light emitting chip 70 to emit light, the potential of the driving electrode 20 abutting against the anode of the light emitting chip 70 is high, and the potential of the driving electrode 20 abutting against the cathode of the light emitting chip 70 is low, so that a potential difference is formed between the anode and the cathode of the light emitting chip 70, ensuring that the light emitting chip 70 can emit light normally. The electrode butt joint of the driving electrode 20 and the light emitting chip 70 mainly means that the driving electrode 20 and the electrode of the light emitting chip 70 are abutted together.
The current of the driving electrode 20 can flow to the light emitting chip 70 by the butt joint. The material of the driving electrode 20 includes a metal conductive material such as copper, aluminum, gold, silver, etc., and may be one of them or a combination of a plurality of metal materials. In addition, the driving electrode 20 may also be made of a semiconductor material such as ITO (Indium Tin Oxide).
The thermoelectric refrigeration layer 30 is arranged corresponding to the driving electrode 20; wherein, the thermoelectric refrigeration layer 30 and the driving electrode 20 are spaced, so that the current of the driving electrode 20 is prevented from directly flowing to the thermoelectric refrigeration layer 30, and the photoresistor 40 can play a role. The thermoelectric cooling layer 30 cools after being energized, and can reduce the temperature of the surrounding environment. The refrigeration temperature of the thermoelectric refrigeration layer 30 is generally in the range of (0 ℃ to-50 ℃), namely between zero ℃ and minus 50 ℃. The thermoelectric cooling layer 30 mainly comprises one or more of bismuth telluride, bismuth sodium titanate based ceramic material, barium strontium titanate, barium strontium niobate ceramic, barium strontium zirconate titanate ceramic, silver niobate ceramic, bismuth sodium titanate based film, etc.
The light-transmitting glue layer 50 is at least located between the light-emitting chip and the substrate, and at least covers part of the surface of the thermoelectric cooling layer. The light-transmitting adhesive layer 50 has a certain adhesion and is in a molten state at a high temperature and in a solidified state at a low temperature. The high temperature refers to a temperature higher than room temperature, and the melting temperature of different materials is different, generally about 100 ℃. The light-transmitting adhesive layer 50 mainly comprises basic resin, tackifier, viscosity modifier and antioxidant. Wherein the basic resin is ethylene and vinyl acetate, the tackifier is one or more of rosin, C5 petroleum resin, C9 petroleum resin, terpene resin and the like, and the viscosity modifier is one or more of paraffin, microcrystalline wax, synthetic wax (polyethylene or polypropylene), phortolite and the like.
The photoresistors 40 (Photo resistoror light-dependent resistor), also known as light pipes. The photoresistor 40 is typically fabricated from one or more materials selected from the group consisting of cadmium sulfide, selenium, aluminum sulfide, lead sulfide, bismuth sulfide, and the like. These materials have a characteristic that their resistance value decreases rapidly under light irradiation. The carriers generated by illumination are all conductive, drift motion is performed under the action of an external electric field, electrons run to the positive electrode of the power supply, and holes run to the negative electrode of the power supply, so that the resistance value of the photoresistor 40 is rapidly reduced.
When the driving electrode 20 is energized, the normal light emitting chip 71 can work normally, the current of the driving electrode 20 flows to the normal light emitting chip 71, the normal light emitting chip 71 emits light to be lighted, the corresponding photoresistor 40 receives the influence of illumination, and the resistance value is reduced. The switching circuit is turned on due to the decrease of the resistance of the photoresistor 40, and the thermoelectric cooling layer 30 is connected to the driving electrode 20 to cool. It will also be appreciated that the thermoelectric cooling layer 30 and the driving electrode 20 are originally turned on, but the resistance of the photoresistor 40 is larger, the turned-on current is smaller, and the current flowing to the thermoelectric cooling layer 30 is more due to the decrease of the resistance of the photoresistor 40, so that the cooling capacity is increased. The cold energy generated by the thermoelectric cooling layer 30 acts on the light-transmitting glue layer 50 to enable the light-transmitting glue layer 50 at the corresponding position of the normal light-emitting chip 71 to be in a solidification state, so that the electrode of the normal light-emitting chip 71 is fixed by the light-transmitting glue layer 50 in the solidification state, and the fixation of the normal light-emitting chip 71 is completed.
The abnormal light emitting chip 72 cannot operate, and the current of the driving electrode 20 flows to the abnormal light emitting chip 72, and the abnormal light emitting chip 72 is in a turned-off state, and it is also understood that the abnormal light emitting chip 72 has low brightness and cannot meet the use requirement. The corresponding photoresistor 40 cannot receive the illumination, or the received illumination is insufficient, and the resistance value of the corresponding photoresistor 40 is increased to disconnect the switch loop. The thermoelectric cooling layer 30 is turned off and the driving electrode 20 is turned on, or it is understood that when the current between the thermoelectric cooling layer 30 and the driving electrode 20 becomes small, the light-transmitting glue layer 50 at the position corresponding to the abnormal light emitting chip 72 is in a molten state, and the light-transmitting glue layer 50 in the molten state loses the fixation of the abnormal light emitting chip 72. Thus, the abnormal light emitting chip 72 can be easily picked up.
In this embodiment, when the light emitting chip 70 is transferred to the display back plate, the anode and cathode of the light emitting chip 70 pass through the light-transmitting adhesive layer 50 and are respectively connected to the driving electrodes 20. At this time, current flows into the anode and cathode of the light emitting chip 70 when the driving electrode 20 is energized. The normal light emitting chip 71 is turned on and emits light, and the abnormal light emitting chip 72 is turned off. The photoresistor 40 corresponding to the normal light-emitting chip 71 is subjected to illumination, the resistance of the photoresistor 40 is reduced to enable the switch circuit to be conducted, the thermoelectric refrigeration layer 30 is connected with the driving electrode 20 for refrigeration, the light-transmitting adhesive layer 50 at the position corresponding to the normal light-emitting chip 71 is in a solidification state, and the electrode of the normal light-emitting chip 71 is fixed; since the abnormal light emitting chip 72 is extinguished, the resistance of the corresponding photoresistor 40 is increased to turn off the switching circuit, the thermoelectric refrigerating layer 30 is turned off and the driving electrode 20 is turned on, the light-transmitting adhesive layer 50 at the corresponding position of the abnormal light emitting chip 72 is in a molten state, and the electrode fixation of the abnormal light emitting chip 72 is lost. Therefore, the abnormal light emitting chip 72 can be picked up in an adhesive manner by distinguishing the normal light emitting chip 71 and the abnormal light emitting chip 72 of the display back plate, so that the abnormal light emitting chip 72 is prevented from being removed on the driving substrate, and the production efficiency is improved.
And after the abnormal light emitting chips are removed, the display dark spots are reduced, and the overall display effect is improved.
It should be noted that, in the present application, the light emitting chip 70 emits light to generate light energy, and the photoresistor 40 is irradiated by the light, that is, the light energy acts on the photoresistor 40 to generate electric energy, so that the photoresistor 40 is turned on. Thus, the thermoelectric cooling layer 30 receives the electric power from the driving electrode 20, generates cold energy, and absorbs heat energy. Thus, it can be said that the present application is a result of the sequential actions of light energy, electric energy and heat energy.
In some embodiments, one thermoelectric refrigeration layer 30 is provided, two photoresistors 40 are respectively arranged between the driving electrode 20 and the thermoelectric refrigeration layer 30, one end of each photoresistor 40 is connected with the driving electrode 20, and the other end is connected with the thermoelectric refrigeration layer 30; by arranging the two photoresistors 40, two ends of the thermoelectric refrigeration layer 30 are connected to form a loop, so that the thermoelectric refrigeration layer 30 can effectively play a role in refrigeration. The two photoresistors 40 are respectively located at two opposite sides of the thermoelectric refrigeration layer 30, so that illumination received by the photoresistors 40 is more uniform, and the switching state of the switching circuit can be controlled more effectively. In other embodiments, the number of photoresistors 40 may be one, three or more, so long as the photoresistors 40, the thermoelectric cooling layer 30 and the driving electrode 20 form a switching circuit.
To ensure the cooling effect, the thermoelectric cooling layer 30 is at least partially disposed between the two driving electrodes 20. When the thermoelectric cooling layer 30 works, the generated cold energy can be well radiated to the periphery of the two driving electrodes 20, so that the light-transmitting glue layer 50 on the periphery of the light-emitting chip 70 which is in butt joint with the driving electrodes 20 is solidified.
The thermoelectric cooling layer 30 may also be disposed around the two driving electrodes 20 to further condense the light transmissive adhesive layer 50 of the two driving electrodes 20.
Referring to fig. 5, the thermoelectric cooling layer 30 is disposed in the middle of the two driving electrodes 20, so that when cold energy is generated, the distances radiating to the two sides are equal, the solidification effects of the light-transmitting glue layers 50 corresponding to the two driving electrodes 20 are substantially the same, and the fixing forces applied to the anode and the cathode of the light-emitting chip 70 are substantially the same. For example, the thermoelectric cooling layer 30 includes a leveling layer 301, where the leveling layer 301 is disposed between two driving electrodes 20, and the center of the leveling layer 301 coincides with the centers of the two driving electrodes 20, so that the lateral end surfaces of the leveling layer 301 are equidistant from the adjacent driving electrodes 20, and thus the cooling capacity radiated to the driving electrodes 20 is equal.
Further, the two driving electrodes 20 are arranged in the same layer, and the materials of the two driving electrodes 20 can be the same, and the etching process is completed at the same time. The upper surface of the planarizing layer 301 is on the same surface as the upper surface of the driving electrode 20, so that it is known that the planarizing layer 301 is at the same height as the driving electrode 20. After the driving electrode 20 is generally manufactured, the thermoelectric refrigeration layer 30 is manufactured, and the leveling layer 301 is conveniently arranged through the equal-height arrangement of the leveling layer 301 and the driving electrode 20. The thermoelectric cooling layer 30 further includes a protrusion 302, where the protrusion 302 is disposed on the upper surface of the planarization layer 301, and the protrusion 302 extends to a side of the planarization layer 301 facing away from the substrate 10. By the arrangement of the protruding portion 302, the cold generated by the thermoelectric cooling layer 30 can extend upwards, so that more light-transmitting glue layers 50 are solidified, and the electrode fixing effect on the light-emitting chip 70 is improved.
Referring to fig. 13, the thermoelectric cooling layer 30 is disposed between the substrate 10 and the light-transmitting glue layer 50, and the photoresistor 40 is disposed between the substrate 10 and the light-transmitting glue layer 50; the photoresistor 40 comprises a connecting section 410, wherein the connecting section 410 is arranged between the driving electrode 20 and the thermoelectric refrigerating layer 30, one end of the connecting section 410 is connected with the driving electrode 20, and the other end is connected with the thermoelectric refrigerating layer 30; the current of the driving electrode 20 may be directed to the thermoelectric cooling layer 30 through the connection section 410.
In order to enhance the turn-on effect, the photoresistor 40 further includes a first extension 421 and a second extension 422, the first extension 421 is connected to the connection section 410 and extends along the sidewall surface of the driving electrode 20, and the second extension 422 is connected to the connection section 410 and extends along the sidewall surface of the thermoelectric cooling layer 30. The first extension section 421 and the second extension section 422 extend on the side wall surface of the driving electrode 20 and the side wall surface of the thermoelectric refrigeration layer 30 respectively, so that the contact area between the photoresistor 40 and the driving electrode 20 and the thermoelectric refrigeration layer 30 is increased, and more current of the driving electrode 20 flows to the photoresistor 40 and more current of the photoresistor 40 flows to the thermoelectric refrigeration layer 30. The first extension 421 may be connected to an end of the connection section 410 remote from the thermoelectric cooling layer 30, and the second extension 422 may be connected to an end of the connection section 410 remote from the driving electrode 20. In order to further increase the contact area, the first extension 421 may be further disposed around the sidewall surface of the driving electrode 20, and likewise, the second extension 422 may be disposed around the sidewall surface of the driving electrode 20.
In addition, the photoresistor 40 further includes a first overlap section 431 and a second overlap section 432, wherein the first overlap section 431 is disposed on the upper surface of the driving electrode 20 and connected to the first extension section 421, and the second overlap section 432 is disposed on the upper surface of the thermoelectric cooling layer 30 and connected to the second extension section 422. The contact area of the photoresistor 40 with the drive electrode 20 and the thermoelectric cooling layer 30 can be further increased by the first and second overlap sections 431 and 432. Therefore, the photoresistor 40 is contacted with the side wall surface and the upper surface of the driving electrode 20, so that the current transmission size of the driving electrode 20 is improved, and meanwhile, the photoresistor 40 is better attached to the driving electrode 20 through more position contacts, so that the firmness between the photoresistor 40 and the driving electrode 20 is improved. Similarly, the photoresistor 40 is also in contact with both the side wall surface and the upper surface of the thermoelectric cooling layer 30, and the current transmission from the photoresistor 40 to the thermoelectric cooling layer 30 and the firmness with the thermoelectric cooling layer 30 are improved.
That is, the photoresistor 40 may be in a strip shape, and the upper surface of the substrate 10, the sidewall surface of the driving electrode 20 and a part of the upper surface are covered with the shape retention, so that the area of the photoresistor 40 receiving the light can be increased, and the capability of regulating the switching state of the switching circuit is increased. In other embodiments, the photoresistor 40 may be square.
Referring to fig. 3, the photoresistor 40 is relatively sensitive to light, in order to reduce the effect of ambient light on it. The display back plate further includes a light shielding layer 60, and the light shielding layer 60 is disposed between the photoresistor 40 and the substrate 10. The ambient light is easily irradiated onto the photoresistor 40 through the substrate 10, and therefore, a light shielding layer 60 can be arranged at the contact position of the photoresistor 40 and the substrate 10, and the light emitted from the direction of the substrate 10 is blocked by the arrangement of the light shielding layer 60. Ensuring that the light affecting the photoresistor 40 comes from the corresponding light emitting chip 70.
Referring to fig. 4, in order to reduce crosstalk of light between the adjacent light emitting chips 70, the display back plate further includes a plurality of shielding members 61, the shielding members 61 are provided in plurality, the plurality of shielding members 61 are spaced apart along the extending direction of the driving electrode 20, the shielding members 61 may space the adjacent thermoelectric cooling layers 30 and also space the photo resistors 40 connected to the thermoelectric cooling layers 30 from other photo resistors 40, and the shielding members 61 are provided between the adjacent light emitting chips 70 after the light emitting chips 70 are transferred to the display back plate. Thus, light from the adjacent light emitting chips 70 is blocked by the shielding member 61, and the influence on the other photoresistors 40 is reduced.
Furthermore, as shown in fig. 5, a shutter 61 may be provided between two adjacent sets of drive electrodes 20.
Referring to fig. 6, in order to ensure that the electrode of the light emitting chip 70 can be accurately docked with the driving electrode 20, the upper surface of the driving electrode 20 includes a docking area 210 and a spacer 220, the spacer 220 is disposed around the docking area 210, and the docking area 210 is used for docking the electrode of the light emitting chip 70. It can be understood that the upper surface area of the driving electrode 20 is larger than the lower surface area of the electrode of the light emitting chip 70, so that the electrode of the light emitting chip 70 is easily abutted to the upper surface of the driving electrode 20 when the light emitting chip 70 is transferred to the display back plate, and the lower surface of the electrode of the light emitting chip 70 can be contacted with the upper surface of the driving electrode 20, thereby improving the current transmission effect. The spacer 220 of the drive electrode 20 may also be used to position the photoresistor 40 such that the upper surface of the drive electrode 20 has sufficient position to ensure that the photoresistor 40 extends to the upper surface of the drive electrode 20.
In order to increase the storage quantity of the display backboard to the light-emitting chips 70, the two driving electrodes 20 are arranged in parallel, a plurality of detection areas are formed between the two driving electrodes 20, the detection areas are arranged along the extending direction of the driving electrodes 20, and a thermoelectric refrigeration layer 30 is correspondingly arranged in one detection area. By the arrangement of the plurality of detection areas, more light emitting chips 70 can be temporarily stored. Further, when power is supplied to the driving electrode 20, power supply to more light emitting chips 70 can be simultaneously completed, and the detection efficiency of the light emitting chips 70 is improved.
Example two
Referring to fig. 7, the present application further provides a method for manufacturing a display back panel, where the method for manufacturing a display back panel includes:
step S10, forming two spaced driving electrodes 20 on the upper surface of the substrate 10, one driving electrode 20 being used for butt joint with the anode of the light emitting chip 70, the other driving electrode 20 being used for butt joint with the cathode of the light emitting chip 70; specifically, referring to fig. 8 and 9, a conductive layer 21 is deposited on the upper surface of the substrate 10, and the conductive layer 21 may be a metal or a semiconductor. Two drive electrodes 20 are etched.
Step S20, forming a thermoelectric cooling layer 30 on the upper surface of the substrate 10, wherein the thermoelectric cooling layer 30 is disposed corresponding to the driving electrode 20; referring to fig. 10 and 11, a thermoelectric refrigerating material layer 31 is disposed on the upper surface of the substrate 10, and the thermoelectric refrigerating material layer 31 is mainly laid at a position between the driving electrodes 20, and then the thermoelectric refrigerating layer 30 is processed by etching.
Step S30, forming a photoresistor 40 between the driving electrode 20 and the thermoelectric cooling layer 30, and connecting the photoresistor 40 to the driving electrode 20 and the thermoelectric cooling layer 30; referring to fig. 12 and 13, a photosensitive material layer 41 is deposited on the upper surfaces of the driving electrode 20 and the thermoelectric cooling layer 30, and the substrate 10, and the photosensitive material layer 41 is processed by mask etching to process a photo resistor 40, and the photo resistor 40 is connected with the driving electrode 20 and the thermoelectric cooling layer 30 to form a switching circuit.
In step S40, a light-transmitting glue layer 50 is formed on the upper surface of the driving electrode 20, and the light-transmitting glue layer 50 covers at least a portion of the surface of the thermoelectric cooling layer 30.
Thus, the display backboard is manufactured. When transferring the light emitting chip 70, the electrode of the light emitting chip 70 passes through the light-transmitting adhesive layer 50 and is connected with the driving electrode 20. The driving electrode 20 is electrified, the normal light emitting chip 71 can work normally, the photoresistor 40 corresponding to the normal light emitting chip 71 receives the influence of illumination, and the resistance value is reduced to enable the switch circuit to be conducted. The thermoelectric cooling layer 30 is connected to the driving electrode 20 and cools. The cold energy generated by the thermoelectric cooling layer 30 acts on the light-transmitting glue layer 50 to enable the light-transmitting glue layer 50 at the corresponding position of the normal light-emitting chip 71 to be in a solidification state, and the electrode of the normal light-emitting chip 71 is fixed by the light-transmitting glue layer 50 in the solidification state.
After the driving electrode 20 is electrified, the abnormal light emitting chip 72 cannot work, the corresponding photoresistor 40 cannot receive illumination, and the resistance value of the corresponding photoresistor 40 is increased to disconnect the switch loop. The thermoelectric cooling layer 30 does not generate cold basically, the transparent adhesive layer 50 at the corresponding position of the abnormal light emitting chip 72 is in a molten state, and the transparent adhesive layer 50 in the molten state loses the fixation of the abnormal light emitting chip 72. Thus, the abnormal light emitting chip 72 can be easily picked up by the adhesion method.
Example III
Referring to fig. 14 to 18, the present application further provides a transfer method, which uses the display back plate as described above, and the transfer method includes:
step S01, butting a growth substrate 80 with a light-emitting chip 70 with a display backboard, enabling electrodes of the light-emitting chip 70 to be inserted into a light-transmitting glue layer 50, butting an anode and a cathode of the light-emitting chip 70 with a driving electrode 20 respectively, stripping the growth substrate 80, and leaving the light-emitting chip 70 on the display backboard; the growth substrate 80 is usually sapphire, and the growth substrate 80 can be removed by laser lift-off, so that the growth substrate 80 is prevented from affecting the transfer of the light emitting chip 70.
Step S02, heating the display backboard to enable the transparent adhesive layer 50 to be in a molten state; the heating temperature typically acts at 100 degrees celsius to ensure that the light transmissive adhesive layer 50 melts. This molten state is understood to be a fluid, or semi-fluid state, having a certain viscosity. The light-transmitting glue layer 50 is basically free from the constraint of the light-emitting chip 70 by heating.
In step S03, the driving electrode 20 is energized to make the anode and the cathode of the light emitting chip 70 respectively energized to emit light as the normal light emitting chip 71, and the light emitting chip 70 is energized to emit no light as the abnormal light emitting chip 72.
At the position of the normal light-emitting chip 71, the normal light-emitting chip 71 is lighted, the light emits on the corresponding photoresistor 40, under the action of illumination, the resistance of the corresponding photoresistor 40 is reduced to enable the switch loop to be conducted, the thermoelectric refrigeration layer 30 is connected with the driving electrode 20 for refrigeration, and the light-transmitting glue layer 50 corresponding to the normal light-emitting chip 71 is refrigerated and is in a solidification state; the transparent adhesive layer 50 having been subjected to the molten state gradually becomes a solidified state under the effect of the cold energy, and at this time, the transparent adhesive layer 50 can well bind the electrodes of the light emitting chip 70.
At the position of the abnormal light emitting chip 72, the abnormal light emitting chip 72 is extinguished, no light irradiates on the corresponding photoresistor 40, the resistance value of the corresponding photoresistor 40 is increased to disconnect the switch circuit, the thermoelectric refrigerating layer 30 is disconnected and connected with the driving electrode 20, and the light-transmitting glue layer 50 at the position corresponding to the abnormal light emitting chip 72 is in a molten state; it will be appreciated that the light-transmitting glue layer 50 corresponding to the abnormal light-emitting chip 72 is still affected by the high temperature, and remains in a molten state, so that the electrodes of the light-emitting chip 70 cannot be effectively bound.
In step S04, the transfer substrate 90 with the adhesive layer 91 is moved toward the light emitting chip 70, and the adhesive layer 91 is bonded to the light emitting chip 70, wherein the abnormal light emitting chip 72 is bonded and transferred to the transfer substrate 90. The removal of the abnormal light emitting chip 72 is completed by the transfer substrate 90, leaving the light emitting chip 70 as a chip capable of normally emitting light. Therefore, when the display backboard is used as the transient substrate, the abnormal light emitting chips 72 can be removed synchronously in the process of transferring a large amount of light emitting chips 70, so that the subsequent transfer to the driving substrate is avoided and the unbinding operation is performed, thereby improving the production efficiency. The abnormal light emitting chip 72 can be removed rapidly when the display back plate is used as a display panel, so that the display effect is improved.
Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains.
It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the application is limited only by the appended claims.

Claims (10)

1. A display back sheet, comprising:
the thermoelectric refrigerating device comprises a substrate, wherein two driving electrodes are arranged at intervals on the substrate, a thermoelectric refrigerating layer and a photoresistor are electrically connected with the driving electrodes, and the driving electrodes, the thermoelectric refrigerating layer and the photoresistor form a switching loop;
the anode of the light-emitting chip is in butt joint with one driving electrode, and the cathode of the light-emitting chip is in butt joint with the other driving electrode;
the light-transmitting adhesive layer is at least positioned between the light-emitting chip and the substrate and at least covers part of the surface of the thermoelectric refrigerating layer;
wherein, when the driving electrode is electrified,
the normal light-emitting chip emits light and lights up, the corresponding resistance value of the photoresistor is reduced to enable the switch loop to be conducted, the thermoelectric refrigeration layer is communicated with the driving electrode and used for refrigerating, and the light-transmitting adhesive layer at the corresponding position of the normal light-emitting chip is in a solidification state so as to fix the normal light-emitting chip;
the abnormal light-emitting chip is extinguished, the corresponding resistance value of the photoresistor is increased to enable the switch loop to be disconnected, the thermoelectric refrigerating layer is disconnected and connected with the driving electrode, the light-transmitting adhesive layer at the corresponding position of the abnormal light-emitting chip is in a molten state, and the abnormal light-emitting chip is not fixed.
2. The display back plate according to claim 1, wherein one thermoelectric refrigerating layer is arranged, two photoresistors are arranged between the driving electrode and the thermoelectric refrigerating layer, one end of each photoresistor is connected with the driving electrode, and the other end of each photoresistor is connected with the thermoelectric refrigerating layer.
3. The display back plate of claim 2, wherein said thermoelectric cooling layer comprises a flat layer disposed between two of said drive electrodes, the center of said flat layer coinciding with the center of two of said drive electrodes.
4. The display back plate of claim 3, wherein the thermoelectric cooling layer further comprises a protrusion disposed on an upper surface of the planar layer, the protrusion extending to a side of the planar layer facing away from the substrate.
5. The display back plate according to any one of claims 1 to 4, wherein the thermoelectric refrigeration layer is provided between the substrate and the light-transmitting adhesive layer, and the photoresistor is provided between the substrate and the light-transmitting adhesive layer;
the photoresistor comprises a connecting section, wherein the connecting section is arranged between the driving electrode and the thermoelectric refrigerating layer, one end of the connecting section is connected with the driving electrode, and the other end of the connecting section is connected with the thermoelectric refrigerating layer;
the photoresistor also comprises a first extension section and a second extension section, wherein the first extension section is connected with the connection section and extends along the side wall surface of the driving electrode, and the second extension section is connected with the connection section and extends along the side wall surface of the thermoelectric refrigeration layer;
the photoresistor also comprises a first lap joint section and a second lap joint section, wherein the first lap joint section is arranged on the upper surface of the driving electrode and is connected with the first extension section, and the second lap joint section is arranged on the upper surface of the thermoelectric cooling layer and is connected with the second extension section.
6. The display back sheet according to any one of claims 1 to 4, further comprising a light shielding layer provided between the photoresistor and the substrate.
7. The display back plate according to any one of claims 1 to 4, wherein an upper surface of the driving electrode includes a docking region and a spacer region, the spacer region being surrounded by the docking region, the docking region being for docking an electrode of a light emitting chip.
8. The display back panel according to any one of claims 1 to 4, wherein two of the driving electrodes are arranged in parallel, a plurality of detection areas are formed between the two driving electrodes, the detection areas are arranged along the extending direction of the driving electrodes, and one of the detection areas is correspondingly provided with one of the thermoelectric cooling layers.
9. The manufacturing method of the display backboard is characterized by comprising the following steps of:
forming two spaced driving electrodes on the upper surface of the substrate, wherein one driving electrode is used for butt joint of an anode of the light-emitting chip, and the other driving electrode is used for butt joint of a cathode of the light-emitting chip;
forming a thermoelectric refrigeration layer on the upper surface of the substrate, wherein the thermoelectric refrigeration layer is arranged corresponding to the driving electrode;
forming a photoresistor between the driving electrode and the thermoelectric refrigeration layer, and connecting the photoresistor with the driving electrode and the thermoelectric refrigeration layer to form a switching loop;
and forming a light-transmitting adhesive layer on the upper surface of the driving electrode, and enabling the light-transmitting adhesive layer to at least cover part of the surface of the thermoelectric refrigerating layer.
10. A transfer method employing the display back sheet according to any one of claims 1 to 8, the transfer method comprising:
butting a growth substrate with a light-emitting chip with a display backboard, enabling electrodes of the light-emitting chip to be inserted into the light-transmitting adhesive layer, butting an anode and a cathode of the light-emitting chip with one driving electrode respectively, stripping the growth substrate, and reserving the light-emitting chip on the display backboard;
heating the display backboard to enable the light-transmitting adhesive layer to be in a molten state;
energizing the driving electrode to enable the anode and the cathode of the light-emitting chip to be respectively energized with current, wherein the light-emitting chip emits light after being energized to be a normal light-emitting chip, and the light-emitting chip does not emit light after being energized to be an abnormal light-emitting chip;
the normal light-emitting chip is lightened and irradiates on the corresponding photoresistor, the resistance value of the corresponding photoresistor is reduced under the action of illumination, so that the switch loop is conducted, the thermoelectric refrigerating layer is communicated with the driving electrode and refrigerates, and the light-transmitting adhesive layer corresponding to the normal light-emitting chip is refrigerated and is in a solidification state;
at the position of the abnormal light-emitting chip, the abnormal light-emitting chip is extinguished, no light irradiates on the corresponding photoresistor, the resistance value of the corresponding photoresistor is increased to enable the switch loop to be disconnected, the thermoelectric refrigerating layer is disconnected and connected with the driving electrode, and the light-transmitting adhesive layer at the position corresponding to the abnormal light-emitting chip is in a molten state;
and moving the transfer substrate with the adhesive layer to the light emitting chip, so that the adhesive layer is adhered to the light emitting chip, wherein the abnormal light emitting chip is adhered and transferred to the transfer substrate.
CN202311256264.9A 2023-09-27 2023-09-27 Display backboard, manufacturing method and transferring method thereof Active CN116995072B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311256264.9A CN116995072B (en) 2023-09-27 2023-09-27 Display backboard, manufacturing method and transferring method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311256264.9A CN116995072B (en) 2023-09-27 2023-09-27 Display backboard, manufacturing method and transferring method thereof

Publications (2)

Publication Number Publication Date
CN116995072A true CN116995072A (en) 2023-11-03
CN116995072B CN116995072B (en) 2023-12-08

Family

ID=88523576

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311256264.9A Active CN116995072B (en) 2023-09-27 2023-09-27 Display backboard, manufacturing method and transferring method thereof

Country Status (1)

Country Link
CN (1) CN116995072B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246946A (en) * 2007-02-14 2008-08-20 致惠科技股份有限公司 Thermoelectric cooler module structure
CN110444547A (en) * 2019-07-29 2019-11-12 南京中电熊猫平板显示科技有限公司 A kind of micro-led array shows backboard and its manufacturing method
TWM597022U (en) * 2020-03-23 2020-06-11 柏友照明科技股份有限公司 Led illumination device
WO2021219069A1 (en) * 2020-04-30 2021-11-04 华为技术有限公司 Stacked structure, display screen and display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246946A (en) * 2007-02-14 2008-08-20 致惠科技股份有限公司 Thermoelectric cooler module structure
CN110444547A (en) * 2019-07-29 2019-11-12 南京中电熊猫平板显示科技有限公司 A kind of micro-led array shows backboard and its manufacturing method
TWM597022U (en) * 2020-03-23 2020-06-11 柏友照明科技股份有限公司 Led illumination device
WO2021219069A1 (en) * 2020-04-30 2021-11-04 华为技术有限公司 Stacked structure, display screen and display device

Also Published As

Publication number Publication date
CN116995072B (en) 2023-12-08

Similar Documents

Publication Publication Date Title
US11699776B2 (en) Light-emitting element having conductive contact layer
US9337407B2 (en) Photoelectronic element and the manufacturing method thereof
US6809341B2 (en) Light-emitting diode with enhanced brightness and method for fabricating the same
US9559278B2 (en) Light emitting device package
CN103460415A (en) Light emitting device packages, systems, and methods
US20030003613A1 (en) Light emitting diode having a transparent substrate and a method for manufacturing the same
CN103502727A (en) Remote component devices, systems, and methods for use with light emitting devices
US8653546B2 (en) Light-emitting device having a ramp
US9929207B2 (en) Light-emitting device and method for manufacturing the same
CN116995072B (en) Display backboard, manufacturing method and transferring method thereof
US20050287833A1 (en) Light-emitting-diode structure and fabrication method thereof
CN105280665A (en) Photoelectric element and manufacture method thereof
KR102252477B1 (en) Light emittimng device and light emitting device including the same
CN100364120C (en) Array of luminous element with stick layer
US10426006B2 (en) Optoelectronic component with protective circuit
CN116230723B (en) Display panel, display device and repairing method thereof
CN113745263B (en) Display panel, manufacturing method thereof and display device
TWI246781B (en) Light emitting diodes (LED)
TWI669834B (en) Optoelectronic device and method for manufacturing the same
TWI625869B (en) Optoelectronic device and method for manufacturing the same
CN114822374A (en) Drive circuit, light-emitting panel, preparation method of light-emitting panel and display device
TWI524549B (en) A photoelectronic element and the manufacturing method thereof
TWI721501B (en) Optoelectronic device and method for manufacturing the same
TWI604635B (en) Optoelectronic device and method for manufacturing the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant