CN116961421A - Self-adaptive optimized active gate drive based on temperature feedback - Google Patents

Self-adaptive optimized active gate drive based on temperature feedback Download PDF

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Publication number
CN116961421A
CN116961421A CN202310950182.8A CN202310950182A CN116961421A CN 116961421 A CN116961421 A CN 116961421A CN 202310950182 A CN202310950182 A CN 202310950182A CN 116961421 A CN116961421 A CN 116961421A
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China
Prior art keywords
output
voltage
active gate
gate drive
power device
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CN202310950182.8A
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Chinese (zh)
Inventor
赵爽
杨志伟
李贺龙
李晓冬
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Hefei Bozhong Electronic Technology Co ltd
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Hefei Bozhong Electronic Technology Co ltd
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Priority to CN202310950182.8A priority Critical patent/CN116961421A/en
Publication of CN116961421A publication Critical patent/CN116961421A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/157—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The application provides a self-adaptive optimized active gate electrode drive based on temperature feedback, which comprises a drive module, a power device junction temperature detection unit, a signal conversion unit and a signal amplification unit, wherein the output of the drive module is connected with the input end of the power device junction temperature detection unit, the output of the power device junction temperature detection unit is connected with the input end of the signal conversion unit, the output of the signal conversion unit is connected with the input end of the signal amplification unit, and the output of the signal amplification unit is connected with the input end of the drive module. The application obtains the approximate relation between the junction temperature and the grid driving voltage of the power device when in operation through the signal conversion, and as different types of power devices have different characteristics and response behaviors, the relation can be utilized for adjustment so as to reduce the loss of the power devices and not be limited to the equipment characteristics; reducing the loss by varying the magnitude of the gate-source voltage helps to increase the maximum current used by the power device.

Description

Self-adaptive optimized active gate drive based on temperature feedback
Technical Field
The application relates to the technical field of power semiconductor device driving, in particular to a self-adaptive optimized active gate driving based on temperature feedback.
Background
Along with popularization and application of high-power conversion technology in industrial fields such as wind power, photovoltaic power generation, locomotive traction, electric automobile driving and the like, the reliability problem of the power converter is getting more and more attention of people. The power device is used as a core component of the converter system and plays a role in safe and reliable operation of the system, and the converter is often operated in an environment with large power fluctuation range so that the junction temperature in the power module is high and fluctuates severely. The higher the junction temperature of the device is, the shorter the service life is, the larger the junction temperature change amplitude is, and the shorter the service life is. There is a correlation between the junction temperature of the device and the loss of the power device, and the equivalent thermal network of the MOSFET bottom cooling power device is sequentially connected from top to bottom into five parts, namely a bare chip, a substrate, a base, heat conducting oil and a radiating fin. Each part has thermal impedance corresponding to the thermal impedance, loss is generated during operation, and the product of total power loss and thermal impedance is added with the ambient temperature to obtain the junction temperature Tj of the device. It follows that the power loss is proportional to Tj when there is no change in ambient temperature. Therefore, some means are required to reduce losses and thus control the junction temperature to fluctuate within normal limits, ensuring sustainable use of the device.
Practical studies have shown that the total power loss of a MOSFET includes switching losses and on losses, and the on losses are proportional to steady state current, switching losses are proportional to switching frequency and switching energy losses, and that the faster the gate drive voltage is, the lower the on losses and on losses, and vice versa. Therefore, there is a correlation between VGS and the loss of the power device, and VGS is an important parameter for controlling conduction in the power device such as MOSFET (metal oxide semiconductor field effect transistor). The conduction characteristic of the power device can be controlled by properly adjusting VGS, so that the loss of the power device is indirectly influenced, and the junction temperature of the power device can be indirectly reduced. The traditional junction temperature control method is limited to equipment characteristics, and needs to have certain knowledge on the characteristics and behaviors of the power devices and optimize the power devices. Different types of power devices have different characteristics and response behaviors, and a common junction temperature control method may not be applicable to all devices. Therefore, when the junction temperature changes, if the corresponding change relation of the gate source voltage can be correspondingly obtained, the relation can be used for adjusting so as to reduce the loss of the power device and not limit the loss to the equipment characteristic, so that the power device is kept in a proper working temperature range, and the maximum use current of the power device is improved. Proper gate driving voltage can be selected according to the requirement, so that the loss control of the device and the self-adaptive adjustment of junction temperature are realized.
Disclosure of Invention
The present application aims to provide an adaptive optimized active gate drive based on temperature feedback that overcomes or at least partially solves the above-mentioned problems.
In order to achieve the above purpose, the technical scheme of the application is specifically realized as follows:
the application provides a self-adaptive optimized active gate electrode drive based on temperature feedback, which comprises a drive module, a power device junction temperature detection unit, a signal conversion unit and a signal amplification unit, wherein the output of the drive module is connected with the input end of the power device junction temperature detection unit, the output of the power device junction temperature detection unit is connected with the input end of the signal conversion unit, the output of the signal conversion unit is connected with the input end of the signal amplification unit, and the output of the signal amplification unit is connected with the input end of the drive module.
The driving module comprises a DSP, an optocoupler isolator, a COMS tube, an inverter, a driving resistor Rd and a silicon carbide power MOSFET, wherein PWM signals output by the DSP are connected to the input of the inverter after passing through the optocoupler isolator, the output of the inverter is connected to the input end of the CMOS tube, the source electrode of the PMOS tube in the COMS tube is connected to VCC, the source electrode of the NMOS tube is connected to VEE, and the output end of the CMOS tube is connected to the grid electrode of the silicon carbide power MOSFET through the driving resistor Rd.
The power device junction temperature detection unit comprises a negative temperature coefficient thermistor NTC attached inside the power module.
The signal conversion unit comprises an LDO low-voltage linear voltage stabilizing unit.
The signal amplifying unit comprises an operational amplifier, a voltage source V1, four resistors Rx, R3, R4 and Rf, and the operational amplifier, the voltage source V1, the resistors Rx, R3, R4 and Rf form a homodromous proportional operation circuit with a voltage dividing circuit.
As a further aspect of the present application, the driving module further includes an inductance Ls, where the inductance Ls is a parasitic inductance of the silicon carbide power MOSFET.
As a further scheme of the application, the LDO low dropout linear regulator comprises a resistor circuit R2 consisting of an input capacitor Cin, an output capacitor Cout, a feedforward capacitor Cf, a high-end resistor R1, a negative temperature coefficient thermistor NTC and a voltage regulator.
As a further scheme of the application, the voltage stabilizer adopts AP2127 series ADJTRG1, the maximum output voltage is 4.75V, and the maximum current is only 300mA.
As a further aspect of the present application, the input capacitor Cin is a ceramic capacitor with 1uF, and the input capacitor Cin is connected between VIN and GND pins.
As a further aspect of the present application, the output capacitor Cout is a ceramic capacitor of 4.7uF, and is close to VOUT and GND pins.
As a further aspect of the present application, the resistor circuit formed by the negative temperature coefficient thermistor NTC adjusts the total resistance of the circuit within 5kΩ to 200kΩ.
As a further scheme of the application, the relation between the output and the input in the in-phase proportion operation circuit with the voltage dividing circuit is thatIn order to realize the proportional relationship, the resistors r4=rf and rx=r3 at the same direction are required to be arranged, in order to realize the amplifying function of the voltage signal, rf is set to k×rx according to the magnitude of the gate-on voltage VGS of the silicon carbide power MOSFET, K is a number larger than 1, the varistor is used for replacing Rf for convenient control, the multiple is convenient to control to change the output voltage VCC, and then the VGS is changed.
As a further aspect of the present application, the operational amplifier is selected to have a model AD8038.
The application provides a self-adaptive optimized active gate drive based on temperature feedback, which has the beneficial effects that:
1. the application obtains the approximate relation between the junction temperature and the grid driving voltage of the power device when in operation through the signal conversion, and as different types of power devices have different characteristics and response behaviors, the relation can be utilized for adjustment so as to reduce the loss of the power devices and not be limited to the equipment characteristics;
2. the application reduces the loss by changing the gate-source voltage, is beneficial to improving the maximum current used by the power device and is beneficial to better utilizing the device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is an overall block diagram of the present application.
Fig. 2 is a schematic diagram of a driving module according to the present application.
FIG. 3 is a schematic diagram of an LDO low voltage linear voltage stabilizing unit according to the present application.
Fig. 4 is a circuit diagram of a resistor composed of a negative temperature coefficient thermistor NTC according to the present application.
Fig. 5 is a schematic diagram of a signal amplifying unit in the present application.
Fig. 6 is a graph showing the relationship between VCC and temperature T in the present application.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Referring to fig. 1, an adaptive optimized active gate drive global framework based on temperature feedback. Comprising the following steps: the device comprises a driving module, a silicon carbide power MOSFET power device, a power device junction temperature detection unit, an LDO low dropout linear voltage regulator and a signal amplification unit.
Firstly, determining the starting voltage VGS of a silicon carbide power MOSFET power device in a main circuit, providing a proper driving signal by a driving module to enable the silicon carbide power MOSFET power device in the main circuit to be conducted, increasing the junction temperature, then collecting junction temperature information of the silicon carbide power MOSFET power device by a junction temperature detection unit of the power device, wherein the junction temperature detection unit of the power device is provided with a negative temperature coefficient thermistor NTC in most power modules, ensuring more accurate temperature measurement, obtaining the relation between the negative temperature coefficient thermistor NTC resistance and the junction temperature by a characteristic curve of the negative temperature coefficient thermistor NTC resistance and the temperature in the junction temperature detection unit, then directly switching a resistance circuit R2 consisting of the negative temperature coefficient thermistor NTC into an LDO low-dropout linear voltage regulator to replace a resistor divider between VOUT and an ADJ pin, and increasing the V0UT as the resistance of the negative temperature coefficient thermistor NTC is reduced along with the increase of the junction temperature, further increasing the loss of the silicon carbide power MOSFET power device, and improving the maximum use current of the device, so that the maximum use current of the silicon carbide power MOSFET power device is controlled in a normal fluctuation range.
As shown in fig. 2, the driving module is composed of a DSP, an opto-isolator, an inverter, a COMS tube and a driving resistor Rd.
The DSP generates PWM signals and sends the PWM signals to a buffer circuit, the buffer circuit is composed of an inverter and a CMOS tube, the structure of the optical coupler is equivalent to packaging a light emitting diode and a phototriode together, the input end and the output end of the optical coupler isolation circuit have high and low voltage differences, the optical coupler isolation mainly realizes unidirectional transmission of signals, the input end and the output end completely realize electric isolation, then the isolated two circuits are not directly connected electrically, interference caused by the electric connection is prevented, the buffer is essentially an inverter, the layout of the buffer is designed by using a MOS tube, the buffer is obtained as a special inverter with the width-length ratio far higher than that of a common inverter, the width-length ratio is increased essentially to improve the switching current of the MOSFET, the driving capability of the later stage can be obviously improved, the rising and falling edges of the signals are faster, in the example, the buffer is of the type IXD_614, the power supply voltage, namely the input voltage VCC, is changed within the range of-0.3V to 40V, so that the output voltage of a signal amplifying unit is controlled within the range to ensure normal operation, a driving resistor Rd is required to select a proper resistance value, a C3M0015065D series is selected as a silicon carbide power MOSFET, the typical value of VGS grid threshold voltage is 2.3V, the voltage of LDO output voltage amplified by an operational amplifier is connected with VCC, VEE is connected with-5V, when the input of an inverter is 1, the output is 0, the input of a corresponding buffer is 0, at the moment, the PMOS tube in the CMOS tube of the buffer circuit is conducted, the NMOS tube in the CMOS tube is turned off, the grid driving voltage of the silicon carbide power MOSFET is VCC, the silicon carbide power MOSFET is conducted, the output is 1, the input of the corresponding buffer circuit is 1, at the moment, the PMOS tube in the CMOS tube of the buffer circuit is turned off, the NMOS tube in the CMOS tube is conducted, the silicon carbide power MOSFET is turned off, and the loss of the silicon carbide power MOSFET can be reduced by adjusting the VCC through the found relation.
As shown in fig. 3, the LDO low dropout linear regulator comprises an input capacitor Cin, an output capacitor Cout, a feedforward capacitor Cf, a high-side resistor R1, a resistor circuit (R2) consisting of a negative temperature coefficient thermistor NTC, and a regulator.
Wherein the low-end resistor R2 is replaced by a resistor circuit composed of a negative temperature coefficient thermistor NTC through the formulaIt can be seen that Vref is the reference voltage, and when the junction temperature increases, the negative temperature coefficient thermistor NTC decreases in resistance, and VOUT increases, so that VOUT is proportional to Tj.
When an input voltage VIN is provided to the LDO low dropout linear regulator, the LDO low dropout linear regulator is heated by negative temperature coefficientThe resistor circuit formed by the thermistor NTC replaces a resistor voltage divider of the LDO low dropout linear voltage regulator, and the output voltage of the LDO low dropout linear voltage regulator can change along with the change of the resistance value of the NTC, so that the relation between the junction temperature and the output voltage is obtained; when the junction temperature is increased, the voltage output by V0UT is higher as the negative temperature coefficient thermistor NTC resistance is smaller; it should be noted that the LDO low dropout linear regulator is to be adjustable, i.e. a chip with a resistor divider is selected, the magnitude of the output voltage can be changed by changing the resistance value, and the output voltage can be obtained by a formulaWherein the internal reference voltage vref=0.8v. Secondly, as the output power of the LDO low dropout linear voltage regulator is smaller, an operational amplifier and other methods are needed to amplify the signals according to the needs; in this example, the voltage regulator adopts AP2127 series ADJTRG1, its maximum output voltage (adjustable) is 4.75V, the voltage adjustment range is small, and the maximum current is only 300mA, so that it is necessary to amplify the voltage signal to meet the on condition, and its output power is small and needs a certain measure to amplify its output power, at least up to 1-2W. A feedforward capacitor is arranged between the VOUT and the ADJ pins to improve the stability of the adjustable version and reduce the noise level, and the feedforward capacitor value is calculated according to the formulaA 1uF ceramic capacitor is connected between VIN and GND pins as an input capacitance to decouple input power supply glitches and noise, the amount of capacitance can be increased without limitation, the input capacitance must be as close to the device as possible to ensure input stability and less noise. The output capacitor is used to stabilize and help transient response of the LDO, and is placed as close to VOUT and GND pins as possible, and the lead is made as short as possible, the resistance of the low side (R2) can be selected in the range of 5kΩ to 200kΩ, the resistance circuit composed of the negative temperature coefficient thermistor NTC adjusts the total resistance of the circuit in the range of 5kΩ to 200kΩ, and the resistance circuit composed of the negative temperature coefficient thermistor NTC is shown in fig. 4.
As shown in fig. 5, the signal amplifying unit is a homodromous proportional operation circuit with a voltage dividing circuit, which is composed of an operational amplifier AD8038, a voltage source V1, resistors Rx, R3, R4 and Rf.
The operational amplifier is preferably AD8038, has the characteristics of low power consumption, low cost and the like, can work with extremely low static current and low noise, and has the relation between output and input in an in-phase proportional operational circuit with a voltage dividing circuitIn order to realize the proportional relationship, the resistors r4=rf and rx=r3 at the same direction are required to be set, and to realize the amplifying function of the voltage signal, rf can be set as k×rx according to the magnitude of the gate-on voltage VGS of the silicon carbide power MOSFET, K is a number greater than 1, a varistor can be used for replacing Rf for convenient control, so that the output voltage VCC can be changed by a convenient control multiple, and the VGS can be changed.
In the embodiment, when the high-side resistor R1 in the LDO low-voltage linear voltage regulator takes 150kΩ, the signal amplifying unit rf=10rx, i.e. k=10, at this timeVCC is inversely related to R2. Rm in R2 is 90kΩ, rn is 100kΩ, in which case +.>When the R2 resistance varies in the range of 5kΩ to 200kΩ, vgs=vcc inversely relates to the NTC resistance of the negative temperature coefficient thermistor, i.e., VCC rises when the NTC resistance decreases. Using the relationship between the NTC resistance and the temperature of the negative temperature coefficient thermistor, R (NTC) =r×exp (b×1/T1-1/T2)), where T1 and T2 refer to K degrees, i.e., kelvin temperature, and Rt is the resistance of the thermistor at the T1 temperature. R is the nominal resistance of the thermistor at T2 ambient temperature. The B value is an important parameter of the thermistor. In this embodiment, NTCSMELFE is selected as the negative temperature coefficient thermistor NTC on DBC, the working temperature is varied within a range of-40deg.C to 150deg.C, the B value is 3977, T2= (273.15+25), T=T1-273.15, R is 100deg.C.OMEGA, R (NTC) is substituted into R2, and the relationship curve of VCC and temperature T is obtained by the above formulaShown at 6. Thus, when the negative temperature coefficient thermistor NTC resistance decreases with an increase in the junction temperature Tj, the gate driving voltage VGS increases with an increase in the junction temperature, the upper limit is 20V, and the lower limit of VCC is 15V or lower when the temperature is greater than 0 ℃.
The foregoing is merely exemplary of the present application and is not intended to limit the present application. Various modifications and variations of the present application will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the application are to be included in the scope of the claims of the present application.

Claims (9)

1. The self-adaptive optimized active gate drive based on temperature feedback is characterized by comprising a drive module, a power device junction temperature detection unit, a signal conversion unit and a signal amplification unit, wherein the output of the drive module is connected with the input end of the power device junction temperature detection unit, the output of the power device junction temperature detection unit is connected with the input end of the signal conversion unit, the output of the signal conversion unit is connected with the input end of the signal amplification unit, and the output of the signal amplification unit is connected with the input end of the drive module;
the driving module comprises a DSP, an optocoupler isolator, a COMS tube, an inverter, a driving resistor Rd and a silicon carbide power MOSFET, wherein PWM signals output by the DSP are connected to the input of the inverter after passing through the optocoupler isolator, the output of the inverter is connected to the input end of the CMOS tube, the source electrode of the PMOS tube in the COMS tube is connected to VCC, the source electrode of the NMOS tube is connected to VEE, and the output end of the CMOS tube is connected to the grid electrode of the silicon carbide power MOSFET through the driving resistor Rd;
the power device junction temperature detection unit comprises a negative temperature coefficient thermistor NTC attached inside the power module;
the signal conversion unit comprises an LDO low-voltage linear voltage stabilizing unit;
the signal amplifying unit comprises an operational amplifier, a voltage source V1, four resistors Rx, R3, R4 and Rf, and the operational amplifier, the voltage source V1, the resistors Rx, R3, R4 and Rf form a homodromous proportional operation circuit with a voltage dividing circuit.
2. The adaptive optimized active gate drive based on temperature feedback of claim 1, wherein said drive module further comprises an inductance Ls, said inductance Ls being a parasitic inductance of a silicon carbide power MOSFET.
3. The adaptive optimized active gate drive based on temperature feedback of claim 1, wherein the LDO low dropout linear regulator comprises a resistor circuit R2 consisting of an input capacitor Cin, an output capacitor Cout, a feedforward capacitor Cf, a high-side resistor R1, a negative temperature coefficient thermistor NTC, and a regulator.
4. A temperature feedback based adaptive optimized active gate drive as claimed in claim 3, wherein the voltage regulator employs AP2127 series ADJTRG1 with a maximum output voltage of 4.75V and a maximum current of only 300mA.
5. The adaptive optimized active gate drive based on temperature feedback of claim 4, wherein said input capacitance Cin is a ceramic capacitor of 1uF and is connected between VIN and GND pins.
6. An adaptive optimized active gate drive based on temperature feedback as claimed in claim 5, wherein said output capacitance Cout is a ceramic capacitor of 4.7uF, and is close to VOUT and GND pins.
7. An adaptive optimized active gate drive based on temperature feedback as claimed in claim 6, wherein said negative temperature coefficient thermistor NTC comprises a resistive circuit that adjusts the total resistance of the circuit within 5kΩ to 200kΩ.
8. An adaptive optimized active gate drive based on temperature feedback as claimed in claim 1, wherein said in-phase proportional operation circuit with voltage divider circuitThe relation between the output and the input in the road is that VCC＝ Rf ×Vout To achieve the proportional relationship, the common-direction input end resistors r4=rf, rx=r3 and Rx are required to be implemented
The amplification of the current voltage signal is achieved by setting Rf to k×rx, where K is a number greater than 1, according to the magnitude of the gate-on voltage VGS of the silicon carbide power MOSFET, so that the varistor is used to replace Rf for convenient control, and the output voltage VCC is changed by a convenient control multiple, thereby changing VGS.
9. An adaptive optimized active gate drive based on temperature feedback as claimed in claim 8, wherein said operational amplifier is selected as model AD8038.
CN202310950182.8A 2023-07-31 2023-07-31 Self-adaptive optimized active gate drive based on temperature feedback Pending CN116961421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310950182.8A CN116961421A (en) 2023-07-31 2023-07-31 Self-adaptive optimized active gate drive based on temperature feedback

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310950182.8A CN116961421A (en) 2023-07-31 2023-07-31 Self-adaptive optimized active gate drive based on temperature feedback

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Publication Number Publication Date
CN116961421A true CN116961421A (en) 2023-10-27

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