CN116941955A - Non-sticking ceramic container and preparation method thereof - Google Patents
Non-sticking ceramic container and preparation method thereof Download PDFInfo
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- CN116941955A CN116941955A CN202311156979.7A CN202311156979A CN116941955A CN 116941955 A CN116941955 A CN 116941955A CN 202311156979 A CN202311156979 A CN 202311156979A CN 116941955 A CN116941955 A CN 116941955A
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- silicon nitride
- dielectric layer
- nitride layer
- magnetron sputtering
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- 239000000919 ceramic Substances 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 78
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 41
- 239000010936 titanium Substances 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910002804 graphite Inorganic materials 0.000 claims description 12
- 239000010439 graphite Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 abstract description 11
- 101001136034 Homo sapiens Phosphoribosylformylglycinamidine synthase Proteins 0.000 abstract description 10
- 150000005857 PFAS Chemical class 0.000 abstract description 10
- 102100036473 Phosphoribosylformylglycinamidine synthase Human genes 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 10
- 239000004809 Teflon Substances 0.000 abstract description 8
- 229920006362 Teflon® Polymers 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000002045 lasting effect Effects 0.000 abstract description 5
- 231100000252 nontoxic Toxicity 0.000 abstract description 4
- 230000003000 nontoxic effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 208000005623 Carcinogenesis Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000036952 cancer formation Effects 0.000 description 1
- 231100000504 carcinogenesis Toxicity 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 perfluoro Chemical group 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
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- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J27/00—Cooking-vessels
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/10—Frying pans, e.g. frying pans with integrated lids or basting devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Food Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The application relates to the technical field of non-sticky coatings, in particular to a non-sticky ceramic container and a preparation method thereof. The non-stick ceramic container comprises a base material and is made of a ceramic material; and a silicon nitride layer arranged on the substrate; wherein the silicon nitride layer is configured to contact a food material. And a dielectric layer is further arranged between the substrate and the silicon nitride layer. The non-sticking ceramic container adopts the base material of the ceramic material, and then forms the dielectric layer or the dielectric layer and the silicon nitride layer on the surface, wherein the silicon nitride layer is nontoxic and harmless due to stable molecular structure, can substitute Teflon related products in the field of the non-sticking ceramic container, can meet the non-sticking performance, and does not use substances containing PFAS; has the characteristics of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticking and the like.
Description
Technical Field
The application relates to the technical field of non-sticky coatings, in particular to a non-sticky ceramic container and a preparation method thereof.
Background
The non-stick pan products with Teflon coating applied in the current industry and ceramic containers, pot cookers and mugs capable of being used for heating are greatly popularized in the global market in the past decades, and the Teflon coating has the characteristics of high temperature resistance, corrosion resistance and high efficiency and non-stick, so that the Teflon non-stick pan products can be put into thousands of households, and the market scale exceeds trillion. However, further studies have found that PFAS (perfluoro and polyfluoroalkyl materials) are harmful to human health and the environment, and the chemical composition of PFAS is not degraded in the environment for a long time, and although this feature makes PFAS have high application value, it also causes that PFAS may be harmful to natural environment and human body for a long time, including the possibility of carcinogenesis. The use of coatings that replace teflon has been a trend in the industry by a number of states in the united states, which is about to put out regulatory regulations in europe, which are banning PFAS. No better solution to this problem has been seen so far, not only to meet the performance of the non-stick pan, but also without using PFAS-containing substances.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present application is to provide a non-sticking ceramic container and a method for preparing the same, which are capable of preventing sticking of food materials and facilitating cleaning.
To achieve the above and other related objects, a first aspect of an embodiment of the present application provides a non-stick ceramic container, comprising:
a substrate made of a ceramic material; and
a silicon nitride layer arranged on the substrate;
wherein the silicon nitride layer is configured to contact a food material.
In an embodiment of the present application, the non-stick ceramic container further includes a zirconium dielectric layer disposed between the substrate and the silicon nitride layer.
In an embodiment of the present application, the non-stick ceramic container further includes a chrome dielectric layer disposed between the substrate and the silicon nitride layer.
In an embodiment of the present application, the non-stick ceramic container further includes a titanium dielectric layer disposed between the substrate and the silicon nitride layer.
In an embodiment of the present application, a thickness of the zirconium dielectric layer is 0.01um to 2um.
In an embodiment of the present application, a thickness of the chrome dielectric layer is 0.01um to 2um.
In an embodiment of the application, a thickness of the titanium dielectric layer is 0.01um to 2um.
In an embodiment of the application, a thickness of the silicon nitride layer is 0.01um to 8um.
The second aspect of the embodiment of the application provides a preparation method of a non-sticky ceramic container, which comprises the following steps: providing a substrate made of a ceramic material; and
and forming a silicon nitride layer on one surface of the substrate by adopting a magnetron sputtering mode.
In an embodiment of the application, a thickness of the silicon nitride layer is 0.01um to 8um.
In one embodiment of the present application, the silicon nitride layer and a graphite mixed composite layer are formed on a surface of the substrate by magnetron sputtering.
In an embodiment of the present application, the substrate is detachably disposed on a holding frame in a magnetron sputtering furnace, and the holding frame is stationary when the silicon nitride layer is formed by magnetron sputtering.
In an embodiment of the present application, the substrate is detachably disposed on a holding frame in a magnetron sputtering furnace, and the holding frame rotates when the silicon nitride layer is formed by magnetron sputtering.
In an embodiment of the present application, after forming a silicon nitride layer on a surface of the substrate by magnetron sputtering, an annealing process is performed.
A third aspect of the embodiment of the present application provides a method for preparing a non-adhesive ceramic container, the method comprising: providing a substrate made of a ceramic material;
forming a dielectric layer on one surface of the base material by adopting a magnetron sputtering mode; and
and forming a silicon nitride layer on one surface of the dielectric layer by adopting a magnetron sputtering mode.
In one embodiment of the present application, the dielectric layer is a zirconium dielectric layer.
In an embodiment of the present application, a thickness of the zirconium dielectric layer is 0.01um to 2um.
In one embodiment of the present application, the dielectric layer is a chrome dielectric layer.
In an embodiment of the present application, a thickness of the chrome dielectric layer is 0.01um to 2um.
In an embodiment of the present application, the dielectric layer is a titanium dielectric layer.
In an embodiment of the application, a thickness of the titanium dielectric layer is 0.01um to 2um.
In an embodiment of the application, a thickness of the silicon nitride layer is 0.01um to 8um.
In one embodiment of the present application, the silicon nitride layer is formed by mixing graphite into a composite layer on the surface of the dielectric layer, wherein the silicon nitride proportion is 95wt% -85 wt% of graphite and 5wt% -15 wt%.
In an embodiment of the present application, the substrate is detachably disposed on a holding frame in a magnetron sputtering furnace, and the holding frame is stationary when the dielectric layer is formed by magnetron sputtering and the silicon nitride layer is formed by magnetron sputtering.
In an embodiment of the present application, the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder rotates when the dielectric layer is formed by magnetron sputtering and the silicon nitride layer is formed by magnetron sputtering.
In an embodiment of the present application, after forming a silicon nitride layer on a surface of the dielectric layer by using a magnetron sputtering method, an annealing process is further performed.
As described above, the non-sticky ceramic container and the preparation method thereof provided by the embodiment of the application adopt the base material of the ceramic material, and then the dielectric layer or the dielectric layer and the silicon nitride layer are formed on the surface, and the silicon nitride layer is nontoxic and harmless due to stable molecular structure, so that the non-sticky ceramic container can substitute Teflon related products in the field of the non-sticky ceramic container, can meet the non-sticky performance, and does not use substances containing PFAS; has the characteristics of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticking and the like.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of a part of a first embodiment of a non-stick ceramic container according to the present application;
FIG. 2 is a schematic cross-sectional view of a part of a second embodiment of a non-stick ceramic container according to the present application;
FIG. 2-1 is a schematic cross-sectional view showing a part of a non-stick ceramic container according to a third embodiment of the present application
FIG. 3 is a schematic flow chart of a first embodiment of a method for preparing a non-stick ceramic container according to the present application;
FIG. 3-1 is a schematic flow chart of a third embodiment of a method for preparing a non-stick ceramic container according to the present application;
FIG. 4 is a schematic flow chart of a second embodiment of a method for preparing a non-stick ceramic container according to the present application;
FIG. 4-1 is a schematic flow chart of a third embodiment of a method for preparing a non-stick ceramic container according to the present application;
FIG. 5 is a schematic structural view of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein the holding frame is stationary; and
fig. 6 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, in which the holder rotates.
Reference numerals in the drawings represent respectively:
100. a non-stick ceramic container; 110. a substrate; 120. a dielectric layer; 130. a silicon nitride layer; 200. a magnetron sputtering furnace; 210. a holder; 220. a target material; s100, a preparation method of a non-sticky ceramic container; S101-S103, wherein the steps are performed; s200, a preparation method of the non-sticky ceramic container; s201 to S204, step.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the application to the extent that it can be practiced, since modifications, changes in the proportions, or otherwise, used in the practice of the application, are not intended to be critical to the essential characteristics of the application, but are intended to fall within the spirit and scope of the application. Also, the terms "upper", "lower", "left", "right", "middle" and "first", "second" are used herein for descriptive purposes only and are not intended to limit the scope of the application for which the application may be practiced, but rather the relative relationships thereof may be altered or modified without materially altering the technical context.
The embodiment of the application firstly provides a non-sticking ceramic container, wherein the non-sticking ceramic container can be a pot, a frying pan, a mug and the like, and is not particularly limited herein. The application is illustrated by a mug.
Referring to fig. 1, fig. 1 is a schematic sectional view of a part of a first embodiment of a non-stick ceramic container according to the present application; in this embodiment, the non-stick ceramic container 100 includes a substrate 110 and a silicon nitride (Si 3N 4) layer 130. The substrate 110 of the non-stick ceramic container 100 of the present application is made of a ceramic material. In some embodiments, the silicon nitride layer 130 is disposed on the substrate 110; wherein the silicon nitride layer 130 is configured to contact a food material. In some embodiments, the silicon nitride layer has a thickness of 0.01um to 8um.
Referring to fig. 2, fig. 2 is a schematic cross-sectional view of a part of a non-stick ceramic container according to a second embodiment of the present application; in this embodiment, the non-stick ceramic container 100 includes a substrate 110, a dielectric layer 120, and a silicon nitride layer 130. In some embodiments, the dielectric layer 120 is a zirconium dielectric layer having a thickness of 0.01um to 2um. In other embodiments, the dielectric layer 120 is a chrome dielectric layer having a thickness of 0.01um to 2um. In other embodiments, the dielectric layer 120 is a titanium dielectric layer, and a thickness of the titanium dielectric layer is 0.01um to 2um. In some embodiments, the silicon nitride layer has a thickness of 0.01um to 8um.
As described above, the non-sticking ceramic container provided by the embodiment of the application adopts the substrate made of ceramic material, and then forms the dielectric layer or the dielectric layer and the silicon nitride layer on the surface, wherein the silicon nitride layer is nontoxic and harmless due to stable molecular structure, can substitute Teflon related products in the field of non-sticking ceramic containers, can meet the non-sticking performance, and does not use substances containing PFAS; has the characteristics of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticking and the like.
Referring to fig. 2-1, fig. 2-1 is a schematic cross-sectional view of a part of a non-stick ceramic container according to a third embodiment of the present application; in order to increase the hardness and the wear resistance, the silicon nitride layer 130 is mixed with graphite to form a composite layer 130a on the surface of the dielectric layer, wherein the silicon nitride proportion is 95-85 wt% and the graphite proportion is 5-15 wt%.
In addition, an embodiment of the present application further provides a method S100 for preparing a non-stick ceramic container, referring to fig. 3, fig. 3 is a schematic flow chart of a first embodiment of the method for preparing a non-stick ceramic container, and the method S100 includes, but is not limited to, the following steps.
In step S101, a substrate 110 is provided. Wherein the substrate 100 is made of a ceramic material. The shape of the substrate 100 may be any shape of a pot or any shape of a box, and is not particularly limited herein.
In step S102, a silicon nitride layer 130 is formed on a surface of the substrate 110 by magnetron sputtering.
In step S102, specifically, the magnetron sputtering furnace 200 and the target (silicon nitride) 220 are used to form the silicon nitride layer 130 on one surface of the substrate 110. Referring to fig. 5, fig. 5 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein a substrate 110 is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and the holding frame 210 is stationary when the silicon nitride layer 130 is formed by magnetron sputtering. Alternatively, referring to fig. 6, fig. 6 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein the substrate 110 is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and when the silicon nitride layer 130 is formed by magnetron sputtering, the holding frame 210 rotates, so that the silicon nitride layer 130 is uniformly formed on the surface of the substrate 110.
The first embodiment of the method S100 for preparing a non-stick ceramic container according to the present application further includes performing an annealing process (step S103) after forming a silicon nitride layer 130 on a surface of the substrate 110 by magnetron sputtering (step S102) to increase the hardness and wear resistance of the non-stick ceramic container.
A specific embodiment of the first embodiment of the method S100 for manufacturing a non-stick ceramic container according to fig. 3 will be described.
For example, the substrate 110 is made of a ceramic, the ceramic substrate 110 is first mechanically polished, then the polished ceramic substrate 110 is sandblasted, and the surface floating ash is blown off by compressed air and placed in the magnetron sputtering furnace 200. And (3) performing film deposition by using a magnetron sputtering target (such as silicon nitride) (namely a target 220) on the magnetron sputtering furnace 200, taking out the substrate after the film deposition thickness reaches 0.01um to 8um, and completing film deposition. The specific data table is as follows.
In addition, referring to FIG. 3-1, in order to increase the hardness and wear resistance, a step S102-1 is employed to mix the silicon nitride layer 130 with graphite to form a composite layer 130a on the surface of the substrate, wherein the silicon nitride is 95wt% -85 wt% of graphite and 5wt% -15 wt%.
In addition, an embodiment of the present application further provides a method S200 for preparing a non-stick ceramic container, referring to fig. 4, fig. 4 is a schematic flow chart of a second embodiment of the method for preparing a non-stick ceramic container, and the method S200 includes, but is not limited to, the following steps.
Step S201, providing a substrate 110; wherein the substrate 100 is made of a ceramic material. The shape of the substrate 100 may be any shape of a pot or any shape of a box, and is not particularly limited herein.
In step S202, a dielectric layer 120 is formed on a surface of the substrate 110 by using a magnetron sputtering method.
In step S202, a dielectric layer 120 is formed on one surface of the substrate 110 by using the magnetron sputtering furnace 200 and a target (zirconium Zr, chromium Cr or titanium Ti). Step S202 is similar to step S102, and the difference is only the difference of the targets, and the following description will take the manner of step S102 as an example, and the dielectric layer 102 is not labeled or disclosed in fig. 5 and 6. The dielectric layer 120 may be a zirconium dielectric layer (zirconium as a target), a chromium dielectric layer (chromium as a target), or a titanium dielectric layer (titanium as a target). Referring to fig. 5, fig. 5 is a schematic structural diagram of a magnetron sputtering furnace according to a preparation method of the present application, wherein a substrate 110 is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and the holding frame 210 is stationary when a dielectric layer 120 (not shown in fig. 5, refer to fig. 2) is formed by magnetron sputtering. Alternatively, referring to fig. 6, fig. 6 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein the substrate 110 is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and when the dielectric layer 120 (not shown in fig. 6, refer to fig. 2) is formed by magnetron sputtering, the holding frame 210 rotates so that the dielectric layer 120 (not shown in fig. 6, refer to fig. 2) is uniformly formed on the surface of the substrate 110.
In step S203, a silicon nitride layer 130 is formed on a surface of the dielectric layer 120 by magnetron sputtering.
In step S203, specifically, the silicon nitride layer 130 is formed on one surface of the dielectric layer 120 by using the magnetron sputtering furnace 200 and the target (silicon). Referring to fig. 5, fig. 5 is a schematic structural diagram of a magnetron sputtering furnace according to an embodiment of the application, wherein a substrate 110 including a dielectric layer 120 (not shown in fig. 5, refer to fig. 2) is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and the holding frame 210 is stationary when the silicon nitride layer 130 is formed by magnetron sputtering. Alternatively, referring to fig. 6, fig. 6 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein a substrate 110 including a dielectric layer 120 (not shown in fig. 6, refer to fig. 2) is detachably disposed on a holding frame 210 in a magnetron sputtering furnace 200, and when the silicon nitride layer 130 is formed by magnetron sputtering, the holding frame 210 rotates so as to uniformly form the silicon nitride layer 130 on the surface of the dielectric layer 120. In addition, the pump system is used for vacuum pumping.
In the second embodiment of the method S200 for manufacturing a non-stick ceramic container according to the present application, after forming a silicon nitride layer 130 on a surface of the dielectric layer 120 by magnetron sputtering (step S203), an annealing process is further performed (step S204) to increase the hardness and wear resistance of the non-stick ceramic container.
A specific embodiment of the first embodiment of the method S200 for manufacturing a non-stick ceramic container according to fig. 4 will be described.
For example, the substrate 110 is made of a ceramic, the ceramic substrate 110 is first mechanically polished, then the polished ceramic substrate 110 is sandblasted, and the surface floating ash is blown off by compressed air and placed in the magnetron sputtering furnace 200. The arc target (e.g., zirconium, chromium, or titanium) and the magnetron sputtering target 220 (e.g., silicon nitride) on the magnetron sputtering furnace 200 are used for film deposition, and after the film deposition thickness reaches 0.01um to 8um, the substrate is taken out, and the film deposition is completed. The specific data table is as follows.
In addition, referring to FIG. 4-1, in order to increase the hardness and wear resistance, a step S203-1 is adopted to mix the silicon nitride layer 130 with graphite to form a composite layer 130a on the surface of the dielectric layer, wherein the silicon nitride proportion is 95wt% -85 wt% of graphite and 5wt% -15 wt%.
According to experiments, the surface covering material (the dielectric layer and the silicon nitride layer or the composite layer) of the non-sticky ceramic container has the performances of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticky property and the like after being processed by the process.
According to the preparation method provided by the embodiment of the application, the substrate of the ceramic material is adopted, and then the dielectric layer or the dielectric layer and the silicon nitride layer are formed on the surface, so that the silicon nitride layer is stable in molecular structure, non-toxic and harmless, can substitute a Teflon related product in the field of a non-sticking ceramic container, can meet the non-sticking performance, and does not use a substance containing PFAS; has the characteristics of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticking and the like.
The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the embodiments of the application, and are intended to be included within the scope of the application.
Claims (23)
1. A non-stick ceramic container comprising:
a substrate made of a ceramic material; and
a silicon nitride layer arranged on the substrate;
wherein the silicon nitride layer is configured to contact a food material.
2. The non-stick ceramic container of claim 1, further comprising a zirconium dielectric layer disposed between the substrate and the silicon nitride layer.
3. The non-stick ceramic container of claim 1, further comprising a chrome dielectric layer disposed between the substrate and the silicon nitride layer.
4. The non-stick ceramic container of claim 1, further comprising a titanium dielectric layer disposed between the substrate and the silicon nitride layer.
5. The non-stick ceramic container of claim 2, wherein the zirconium dielectric layer has a thickness of 0.01um to 2um.
6. A non-stick ceramic container according to claim 3, wherein the chromium dielectric layer has a thickness of 0.01um to 2um.
7. The non-stick ceramic container of claim 4, wherein the titanium dielectric layer has a thickness of 0.01um to 2um.
8. The non-stick ceramic container of claim 1, wherein the silicon nitride layer has a thickness of 0.01um to 8um.
9. The non-stick ceramic container of claim 1, wherein the silicon nitride layer is mixed with a graphite to form a composite layer, wherein the silicon nitride layer is 95wt% to 85wt% and the graphite is 5wt% to 15wt%.
10. A method for preparing a non-stick ceramic container, comprising:
providing a substrate made of a ceramic material; and
and forming a silicon nitride layer on one surface of the substrate by adopting a magnetron sputtering mode.
11. The method of claim 10, wherein the silicon nitride layer has a thickness of 0.01um to 8um.
12. The method of claim 10, wherein the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder is stationary when the silicon nitride layer is formed by magnetron sputtering.
13. The method of claim 10, wherein the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder rotates when the silicon nitride layer is formed by magnetron sputtering.
14. The method of claim 10, further comprising performing an annealing process after forming a silicon nitride layer on a surface of the substrate by magnetron sputtering.
15. A method for preparing a non-stick ceramic container, comprising:
providing a substrate made of a ceramic material;
forming a dielectric layer on one surface of the base material by adopting a magnetron sputtering mode; and
and forming a silicon nitride layer on one surface of the dielectric layer by adopting a magnetron sputtering mode.
16. The method of claim 15, wherein the dielectric layer is a zirconium dielectric layer, and the thickness of the zirconium dielectric layer is 0.01um to 2um.
17. The method of claim 15, wherein the dielectric layer is a chrome dielectric layer, and the chrome dielectric layer has a thickness of 0.01um to 2um.
18. The method of claim 15, wherein the dielectric layer is a titanium dielectric layer, and the thickness of the titanium dielectric layer is 0.01um to 2um.
19. The method of claim 15, wherein the silicon nitride layer has a thickness of 0.01um to 8um.
20. The method of claim 15, wherein the substrate is removably disposed on a holder in a magnetron sputtering furnace, the holder being stationary while the dielectric layer is formed by magnetron sputtering and the silicon nitride layer is formed by magnetron sputtering.
21. The method of claim 15, wherein the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder rotates when the dielectric layer is formed by magnetron sputtering and the silicon nitride layer is formed by magnetron sputtering.
22. The method of claim 15, further comprising performing an annealing process after forming a silicon nitride layer on a surface of the dielectric layer by magnetron sputtering.
23. The method for preparing non-stick ceramic according to claim 15, wherein the method comprises: providing a substrate made of a ceramic material;
forming a dielectric layer on one surface of the base material by adopting a magnetron sputtering mode; and
and forming the silicon nitride layer and a graphite mixed composite layer on one surface of the dielectric layer in a magnetron sputtering mode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2023106298831 | 2023-05-30 | ||
| CN202310629883 | 2023-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202322435288.2U Active CN221730278U (en) | 2023-05-30 | 2023-09-07 | Non-sticking metal container |
| CN202322436410.8U Active CN221588370U (en) | 2023-05-30 | 2023-09-07 | Non-sticking glass container |
| CN202311156960.2A Pending CN116998872A (en) | 2023-05-30 | 2023-09-07 | Non-sticking plastic container and preparation method thereof |
| CN202311156979.7A Pending CN116941955A (en) | 2023-05-30 | 2023-09-07 | Non-sticking ceramic container and preparation method thereof |
| CN202311154795.7A Pending CN116969693A (en) | 2023-05-30 | 2023-09-07 | Non-sticking glass container and preparation method thereof |
| CN202322457154.0U Active CN221730280U (en) | 2023-05-30 | 2023-09-07 | Non-sticky plastic container |
| CN202311163011.7A Pending CN117045098A (en) | 2023-05-30 | 2023-09-07 | Non-sticking metal container and preparation method thereof |
| CN202322438422.4U Active CN221730279U (en) | 2023-05-30 | 2023-09-07 | Non-sticking ceramic container |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202322435288.2U Active CN221730278U (en) | 2023-05-30 | 2023-09-07 | Non-sticking metal container |
| CN202322436410.8U Active CN221588370U (en) | 2023-05-30 | 2023-09-07 | Non-sticking glass container |
| CN202311156960.2A Pending CN116998872A (en) | 2023-05-30 | 2023-09-07 | Non-sticking plastic container and preparation method thereof |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202311154795.7A Pending CN116969693A (en) | 2023-05-30 | 2023-09-07 | Non-sticking glass container and preparation method thereof |
| CN202322457154.0U Active CN221730280U (en) | 2023-05-30 | 2023-09-07 | Non-sticky plastic container |
| CN202311163011.7A Pending CN117045098A (en) | 2023-05-30 | 2023-09-07 | Non-sticking metal container and preparation method thereof |
| CN202322438422.4U Active CN221730279U (en) | 2023-05-30 | 2023-09-07 | Non-sticking ceramic container |
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| CN (8) | CN221730278U (en) |
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- 2023-09-07 CN CN202322435288.2U patent/CN221730278U/en active Active
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- 2023-09-07 CN CN202311156960.2A patent/CN116998872A/en active Pending
- 2023-09-07 CN CN202311156979.7A patent/CN116941955A/en active Pending
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| CN117045098A (en) | 2023-11-14 |
| CN221588370U (en) | 2024-08-23 |
| CN116998872A (en) | 2023-11-07 |
| CN116969693A (en) | 2023-10-31 |
| CN221730278U (en) | 2024-09-20 |
| CN221730279U (en) | 2024-09-20 |
| CN221730280U (en) | 2024-09-20 |
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