CN116998872A

CN116998872A - Non-sticking plastic container and preparation method thereof

Info

Publication number: CN116998872A
Application number: CN202311156960.2A
Authority: CN
Inventors: 吕耀辉; 沈雁军; 董小林; 方洁青
Original assignee: Shenzhen Tinno Mobile Technology Co Ltd; Shenzhen Tinno Wireless Technology Co Ltd
Current assignee: Shenzhen Tinno Mobile Technology Co Ltd; Shenzhen Tinno Wireless Technology Co Ltd
Priority date: 2023-05-30
Filing date: 2023-09-07
Publication date: 2023-11-07
Also published as: CN116941955A; CN116969693A; CN117045098A

Abstract

The application relates to the technical field of non-sticky coatings, in particular to a non-sticky plastic container and a preparation method thereof. The non-sticky plastic container comprises a base material and is made of a plastic material; and a silicon nitride layer arranged on the substrate; wherein the silicon nitride layer is configured to contact a food material. And a dielectric layer is further arranged between the substrate and the silicon nitride layer. The non-sticking plastic container adopts the base material of plastic material, and then forms the dielectric layer or the dielectric layer and the silicon nitride layer on the surface, wherein the silicon nitride layer has stable molecular structure, is nontoxic and harmless, can substitute Teflon related products in the field of non-sticking plastic containers, can meet the non-sticking performance, and does not use substances containing PFAS; has the characteristics of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticking and the like.

Description

Non-sticking plastic container and preparation method thereof

Technical Field

The application relates to the technical field of non-sticky coatings, in particular to a non-sticky plastic container and a preparation method thereof.

Background

The non-stick pan products with Teflon coating applied in the current industry and plastic fresh-keeping boxes and plastic bowls and dishes which can be used for heating are greatly popularized in the global market in the past decades, and the Teflon coating has the characteristics of high temperature resistance, corrosion resistance and high efficiency and non-stick, so that the Teflon non-stick pan products can be moved into thousands of families, and the market scale exceeds trillion. However, further studies have found that PFAS (perfluoro and polyfluoroalkyl materials) are harmful to human health and the environment, and the chemical composition of PFAS is not degraded in the environment for a long time, and although this feature makes PFAS have high application value, it also causes that PFAS may be harmful to natural environment and human body for a long time, including the possibility of carcinogenesis. The use of coatings that replace teflon has been a trend in the industry by a number of states in the united states, which is about to put out regulatory regulations in europe, which are banning PFAS. No better solution to this problem has been seen so far, not only to meet the performance of the non-stick pan, but also without using PFAS-containing substances.

Disclosure of Invention

In view of the above drawbacks of the prior art, an object of the present application is to provide a non-sticking plastic container and a method for preparing the same, which are capable of preventing sticking of food materials and facilitating cleaning.

To achieve the above and other related objects, a first aspect of the present application provides a non-stick plastic container, comprising:

a base material made of a plastic material; and

a silicon nitride layer arranged on the substrate;

wherein the silicon nitride layer is configured to contact a food material.

In an embodiment of the present application, the non-adhesive plastic container further includes a zirconium dielectric layer disposed between the substrate and the silicon nitride layer.

In an embodiment of the present application, the non-stick plastic container further includes a chrome dielectric layer disposed between the substrate and the silicon nitride layer.

In an embodiment of the present application, the non-stick plastic container further includes a titanium dielectric layer disposed between the substrate and the silicon nitride layer.

In an embodiment of the present application, a thickness of the zirconium dielectric layer is 0.01um to 2um.

In an embodiment of the present application, a thickness of the chrome dielectric layer is 0.01um to 2um.

In an embodiment of the application, a thickness of the titanium dielectric layer is 0.01um to 2um.

In an embodiment of the application, a thickness of the silicon nitride layer is 0.01um to 8um.

The second aspect of the embodiment of the application provides a preparation method of a non-sticky plastic container, which comprises the following steps:

providing a base material made of a plastic material; and

and forming a silicon nitride layer on one surface of the substrate by adopting a magnetron sputtering mode.

In one embodiment of the application, the silicon nitride layer is mixed with a graphite to form a composite layer, wherein the silicon nitride proportion is 95wt% to 85wt% of graphite and 5wt% to 15wt%.

In an embodiment of the present application, the substrate is detachably disposed on a holding frame in a magnetron sputtering furnace, and the holding frame is stationary when the silicon nitride layer is formed by magnetron sputtering.

In an embodiment of the present application, the substrate is detachably disposed on a holding frame in a magnetron sputtering furnace, and the holding frame rotates when the silicon nitride layer is formed by magnetron sputtering.

A third aspect of the embodiment of the present application provides a method for preparing a non-tacky plastic container, the method comprising:

providing a base material made of a plastic material;

forming a dielectric layer on one surface of the base material by adopting a magnetron sputtering mode; and

and forming a silicon nitride layer on one surface of the dielectric layer by adopting a magnetron sputtering mode.

In one embodiment of the present application, the dielectric layer is a zirconium dielectric layer.

In one embodiment of the present application, the dielectric layer is a chrome dielectric layer.

In an embodiment of the present application, the dielectric layer is a titanium dielectric layer.

In one embodiment of the present application, a composite layer of a mixture of the silicon nitride layer and graphite is formed on a surface of the dielectric layer by magnetron sputtering.

In an embodiment of the present application, the substrate is detachably disposed on a holding frame in a magnetron sputtering furnace, and the holding frame is stationary when the dielectric layer is formed by magnetron sputtering and the silicon nitride layer is formed by magnetron sputtering.

In an embodiment of the present application, the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder rotates when the dielectric layer is formed by magnetron sputtering and the silicon nitride layer is formed by magnetron sputtering.

As described above, the non-sticky plastic container and the preparation method thereof provided by the embodiment of the application adopt the base material of the plastic material, and then the dielectric layer or the dielectric layer and the silicon nitride layer are formed on the surface, and the silicon nitride layer is nontoxic and harmless due to stable molecular structure, so that the non-sticky plastic container can substitute Teflon related products in the field of the non-sticky plastic container, can meet the non-sticky performance, and does not use substances containing PFAS; has the characteristics of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticking and the like.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic cross-sectional view of a first embodiment of a non-stick plastic container according to the present application;

FIG. 2 is a schematic cross-sectional view of a portion of a second embodiment of a non-stick plastic container according to the present application;

FIG. 2-1 is a schematic cross-sectional view of a portion of a third embodiment of a non-stick plastic container according to the present application;

FIG. 3 is a schematic flow chart of a first embodiment of a method for manufacturing a non-stick plastic container according to the present application;

FIG. 3-1 is a flow chart of a third embodiment of a method for manufacturing a non-stick plastic container according to the present application;

FIG. 4 is a flow chart of a second embodiment of a method for manufacturing a non-stick plastic container according to the present application;

FIG. 4-1 is a flow chart of a third embodiment of a method for manufacturing a non-stick plastic container according to the present application;

FIG. 5 is a schematic structural view of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein the holding frame is stationary; and

fig. 6 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, in which the holder rotates.

Reference numerals in the drawings represent respectively:

100. a non-stick plastic container; 110. a substrate; 120. a dielectric layer; 130. a silicon nitride layer; 200. a magnetron sputtering furnace; 210. a holder; 220. a target material; s100, a preparation method of a non-sticky plastic container; S101-S102, wherein the steps are performed; s200, a preparation method of a non-sticky plastic container; s201 to S203, step.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the application to the extent that it can be practiced, since modifications, changes in the proportions, or otherwise, used in the practice of the application, are not intended to be critical to the essential characteristics of the application, but are intended to fall within the spirit and scope of the application. Also, the terms "upper", "lower", "left", "right", "middle" and "first", "second" are used herein for descriptive purposes only and are not intended to limit the scope of the application for which the application may be practiced, but rather the relative relationships thereof may be altered or modified without materially altering the technical context.

The embodiment of the application firstly provides a non-adhesive plastic container, wherein the non-adhesive plastic container can be a plastic preservation box, a plastic bowl, a plastic plate and the like, and is not particularly limited herein. The application is illustrated by taking plastic bowl and dish as an illustration.

Referring to fig. 1, fig. 1 is a schematic sectional view of a part of a first embodiment of a non-stick plastic container according to the present application; in this embodiment, the non-stick plastic container 100 includes a substrate 110 and a silicon nitride (Si 3N 4) layer 130. The substrate 110 of the non-stick plastic container 100 of the present application is made of a plastic material. In some embodiments, the silicon nitride layer 130 is disposed on the substrate 110; wherein the silicon nitride layer 130 is configured to contact a food material. In some embodiments, the silicon nitride layer has a thickness of 0.01um to 8um.

Referring to fig. 2, fig. 2 is a schematic cross-sectional view of a part of a second embodiment of a non-stick plastic container according to the present application; in the present embodiment, the non-stick plastic container 100 includes a substrate 110, a dielectric layer 120, and a silicon nitride layer 130. In some embodiments, the dielectric layer 120 is a zirconium dielectric layer having a thickness of 0.01um to 2um. In other embodiments, the dielectric layer 120 is a chrome dielectric layer having a thickness of 0.01um to 2um. In other embodiments, the dielectric layer 120 is a titanium dielectric layer, and a thickness of the titanium dielectric layer is 0.01um to 2um. In some embodiments, the silicon nitride layer has a thickness of 0.01um to 8um.

As described above, the non-sticky plastic container provided by the embodiment of the application adopts the base material of the plastic material, and then the dielectric layer or the dielectric layer and the silicon nitride layer are formed on the surface, so that the silicon nitride layer is nontoxic and harmless due to stable molecular structure, can substitute Teflon related products in the field of the non-sticky plastic container, can meet the non-sticky performance, and does not use substances containing PFAS; has the characteristics of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticking and the like.

Referring to fig. 2-1, fig. 2-1 is a schematic sectional view of a part of a third embodiment of a non-stick plastic container according to the present application; in order to increase the hardness and the wear resistance, the silicon nitride layer 130 is mixed with graphite to form a composite layer 130a on the surface of the dielectric layer, wherein the silicon nitride proportion is 95-85 wt% and the graphite proportion is 5-15 wt%.

In addition, an embodiment of the present application further provides a method S100 for preparing a non-stick plastic container, referring to fig. 3, fig. 3 is a flow chart of a first embodiment of the method for preparing a non-stick plastic container, and the method S100 includes, but is not limited to, the following steps.

In step S101, a substrate 110 is provided. Wherein the substrate 100 is made of a plastic material. The shape of the substrate 100 may be any shape of a pot or any shape of a box, and is not particularly limited herein.

In step S102, a silicon nitride layer 130 is formed on a surface of the substrate 110 by magnetron sputtering.

In step S102, specifically, the magnetron sputtering furnace 200 and the target (silicon nitride) 220 are used to form the silicon nitride layer 130 on one surface of the substrate 110. Referring to fig. 5, fig. 5 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein a substrate 110 is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and the holding frame 210 is stationary when the silicon nitride layer 130 is formed by magnetron sputtering. Alternatively, referring to fig. 6, fig. 6 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein the substrate 110 is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and when the silicon nitride layer 130 is formed by magnetron sputtering, the holding frame 210 rotates, so that the silicon nitride layer 130 is uniformly formed on the surface of the substrate 110.

A specific embodiment of the first embodiment of the method S100 for manufacturing a non-stick plastic container according to fig. 3 will be described.

For example, the substrate 110 is made of a plastic, the plastic substrate 110 is first mechanically polished, then the polished plastic substrate 110 is sandblasted, and the surface floating ash is blown off by compressed air and placed in the magnetron sputtering furnace 200. And (3) performing film deposition by using a magnetron sputtering target (such as silicon nitride) (namely a target 220) on the magnetron sputtering furnace 200, taking out the substrate after the film deposition thickness reaches 0.01um to 8um, and completing film deposition. The specific data table is as follows.

Referring to fig. 3-1, in order to increase the hardness and wear resistance, a step S102a is adopted to mix the silicon nitride layer 130 with graphite to form a composite layer 130a, wherein the silicon nitride ratio is 95wt% to 85wt% and the graphite is 5wt% to 15wt%.

In addition, an embodiment of the present application further provides a method S200 for preparing a non-stick plastic container, referring to fig. 4, fig. 4 is a flow chart of a second embodiment of the method for preparing a non-stick plastic container, and the method S200 includes, but is not limited to, the following steps.

Step S201, providing a substrate 110; wherein the substrate 100 is made of a plastic material. The shape of the substrate 100 may be any shape of a pot or any shape of a box, and is not particularly limited herein.

In step S202, a dielectric layer 120 is formed on a surface of the substrate 110 by using a magnetron sputtering method.

In step S202, a dielectric layer 120 is formed on one surface of the substrate 110 by using the magnetron sputtering furnace 200 and a target (zirconium Zr, chromium Cr or titanium Ti). Step S202 is similar to step S102, and the difference is only the difference of the targets, and the following description will take the manner of step S102 as an example, and the dielectric layer 102 is not labeled or disclosed in fig. 5 and 6. The dielectric layer 120 may be a zirconium dielectric layer (zirconium as a target), a chromium dielectric layer (chromium as a target), or a titanium dielectric layer (titanium as a target). Referring to fig. 5, fig. 5 is a schematic structural diagram of a magnetron sputtering furnace according to a preparation method of the present application, wherein a substrate 110 is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and the holding frame 210 is stationary when a dielectric layer 120 (not shown in fig. 5, refer to fig. 2) is formed by magnetron sputtering. Alternatively, referring to fig. 6, fig. 6 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein the substrate 110 is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and when the dielectric layer 120 (not shown in fig. 6, refer to fig. 2) is formed by magnetron sputtering, the holding frame 210 rotates so that the dielectric layer 120 (not shown in fig. 6, refer to fig. 2) is uniformly formed on the surface of the substrate 110.

In step S203, a silicon nitride layer 130 is formed on a surface of the dielectric layer 120 by magnetron sputtering.

In step S203, specifically, the magnetron sputtering furnace 200 and the target 220 (silicon nitride) are used to form the silicon nitride layer 130 on one surface of the dielectric layer 120. Referring to fig. 5, fig. 5 is a schematic structural diagram of a magnetron sputtering furnace according to an embodiment of the application, wherein a substrate 110 including a dielectric layer 120 (not shown in fig. 5, refer to fig. 2) is detachably disposed on a holding frame 210 in the magnetron sputtering furnace 200, and the holding frame 210 is stationary when the silicon nitride layer 130 is formed by magnetron sputtering. Alternatively, referring to fig. 6, fig. 6 is a schematic structural diagram of a magnetron sputtering furnace used in the preparation method according to the embodiment of the application, wherein a substrate 110 including a dielectric layer 120 (not shown in fig. 6, refer to fig. 2) is detachably disposed on a holding frame 210 in a magnetron sputtering furnace 200, and when the silicon nitride layer 130 is formed by magnetron sputtering, the holding frame 210 rotates so as to uniformly form the silicon nitride layer 130 on the surface of the dielectric layer 120. In addition, the pump system is used for vacuum pumping.

A specific embodiment of the first embodiment of the method S200 for manufacturing a non-stick plastic container according to fig. 4 will be described.

For example, the substrate 110 is made of a plastic, the plastic substrate 110 is first mechanically polished, then the polished plastic substrate 110 is sandblasted, and the surface floating ash is blown off by compressed air and placed in the magnetron sputtering furnace 200. The arc target (e.g., zirconium, chromium, or titanium) and the magnetron sputtering target 220 (e.g., silicon nitride) on the magnetron sputtering furnace 200 are used for film deposition, and after the film deposition thickness reaches 0.01um to 8um, the substrate is taken out, and the film deposition is completed. The specific data table is as follows.

In addition, referring to fig. 4-1, in order to increase the hardness and wear resistance, a step S203a is adopted to mix the silicon nitride layer 130 with graphite to form a composite layer 130a on the surface of the dielectric layer, wherein the silicon nitride ratio is 95wt% -85 wt% graphite and 5wt% -15 wt%.

According to experiments, the surface covering material (the dielectric layer and the silicon nitride layer or the composite layer) of the non-sticky plastic container has the performances of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticky property and the like after being processed by the process.

According to the preparation method provided by the embodiment of the application, the substrate of the plastic material is adopted, and then the dielectric layer or the dielectric layer and the silicon nitride layer or the composite layer are formed on the surface, so that the silicon nitride layer is non-toxic and harmless due to stable molecular structure, can substitute a Teflon related product in the field of a non-sticky plastic container, can meet the non-sticky performance, and does not use a substance containing PFAS; has the characteristics of high hardness, high wear resistance, high corrosion resistance, high temperature resistance, easy cleaning, no color change, no organic chemical coating, lasting non-sticking and the like.

The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the embodiments of the application, and are intended to be included within the scope of the application.

Claims

1. A non-stick plastic container comprising:

a base material made of a plastic material; and

a silicon nitride layer arranged on the substrate;

wherein the silicon nitride layer is configured to contact a food material.

2. The non-stick plastic container of claim 1, further comprising a zirconium dielectric layer disposed between the substrate and the silicon nitride layer.

3. The non-stick plastic container of claim 1, further comprising a chromium dielectric layer disposed between the substrate and the silicon nitride layer.

4. The non-stick plastic container of claim 1, further comprising a titanium dielectric layer disposed between the substrate and the silicon nitride layer.

5. The non-stick plastic container as claimed in claim 2, wherein the zirconium dielectric layer has a thickness of 0.01um to 2um.

6. A non-stick plastic container as claimed in claim 3, wherein said chromium dielectric layer has a thickness of 0.01um to 2um.

7. The non-stick plastic container as claimed in claim 4, wherein the titanium dielectric layer has a thickness of 0.01um to 2um.

8. The non-stick plastic container as claimed in claim 1, wherein the silicon nitride layer has a thickness of 0.01um to 8um.

9. A non-stick plastic container as claimed in claim 1, wherein said silicon nitride layer is blended with a graphite as a composite layer, wherein the proportion of said silicon nitride layer is 95 to 85wt% and the proportion of said graphite is 5 to 15wt%.

10. A method for preparing a non-stick plastic container, comprising the steps of:

providing a base material made of a plastic material; and

11. The method of claim 10, wherein the silicon nitride layer has a thickness of 0.01um to 8um.

12. The method of claim 10, wherein the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder is stationary when the silicon nitride layer is formed by magnetron sputtering.

13. The method of claim 10, wherein the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder rotates when the silicon nitride layer is formed by magnetron sputtering.

14. A method for preparing a non-stick plastic container, comprising the steps of:

providing a base material made of a plastic material;

15. The method of claim 14, wherein the dielectric layer is a zirconium dielectric layer, and the thickness of the zirconium dielectric layer is 0.01um to 2um.

16. The method of claim 14, wherein the dielectric layer is a chrome dielectric layer, and the thickness of the chrome dielectric layer is 0.01um to 2um.

17. The method of claim 14, wherein the dielectric layer is a titanium dielectric layer, and the thickness of the titanium dielectric layer is 0.01um to 2um.

18. The method of claim 14, wherein the silicon nitride layer has a thickness of 0.01um to 8um.

19. The method of claim 14, wherein the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder is stationary while the dielectric layer is formed by magnetron sputtering and the silicon nitride layer is formed by magnetron sputtering.

20. The method of claim 14, wherein the substrate is detachably disposed on a holder in a magnetron sputtering furnace, and the holder rotates when the dielectric layer is formed by magnetron sputtering and the silicon nitride layer is formed by magnetron sputtering.

21. The method for preparing non-tacky plastic according to claim 14, wherein the method comprises: providing a base material made of a plastic material;

and forming the silicon nitride layer and a graphite mixed composite layer on one surface of the dielectric layer in a magnetron sputtering mode.