CN116913866A - Composite substrate structure, sub-module, power module and sub-module connection method - Google Patents

Composite substrate structure, sub-module, power module and sub-module connection method Download PDF

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Publication number
CN116913866A
CN116913866A CN202310968367.1A CN202310968367A CN116913866A CN 116913866 A CN116913866 A CN 116913866A CN 202310968367 A CN202310968367 A CN 202310968367A CN 116913866 A CN116913866 A CN 116913866A
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circuit layer
signal
power
layer
ceramic substrate
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王炳琨
廖光朝
张小兵
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Chongqing Yuntong Technology Co ltd
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Chongqing Yuntong Technology Co ltd
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Priority to CN202310968367.1A priority Critical patent/CN116913866A/en
Publication of CN116913866A publication Critical patent/CN116913866A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
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  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The application discloses a composite substrate structure, a sub-module, a power module and a sub-module connection method, relates to the technical field of ceramic substrates, and solves the technical problems of current carrying capacity reduction and uneven current distribution caused by arrangement of a power circuit and a signal circuit on the same metal circuit layer in the traditional IGBT module packaging structure. The structure comprises a power circuit layer and a signal circuit layer, wherein the signal circuit layer is arranged on the power circuit layer; the occupied area of the signal circuit layer is smaller than that of the power circuit layer, and the signal circuit layer is continuously or discontinuously arranged on the power circuit layer. According to the application, the power circuit layer and the signal circuit layer are arranged in a layered manner, different transmission circuits can be arranged on the power circuit layer and the signal circuit layer, interference among the transmission circuits is reduced, and the current-carrying heat-conducting capacity, current uniform distribution, parasitic parameters and anti-interference capacity are all optimized.

Description

Composite substrate structure, sub-module, power module and sub-module connection method
Technical Field
The application relates to the technical field of ceramic substrates, in particular to a composite substrate structure, a sub-module, a power module and a sub-module connection method.
Background
The insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) is widely used as a core device for power conversion and control in power electronic systems, and the packaging and connection technology as a "skeleton" of the supporting device directly affects the performance and reliability in practical applications.
In the IGBT module package structure, the Substrate plays a very important role in providing electrical interconnection and insulation, corrosion resistance protection, mechanical support, heat dissipation channels, and the like for the semiconductor chip. The electronic packaging substrates commonly used at present can be mainly classified into polymer substrates (such as PCBs), insulating Metal Substrates (IMS) and ceramic substrates, wherein the ceramic substrates have the properties of high heat conductivity, good heat resistance, high insulation, high strength, thermal matching with chip materials and the like, so that the ceramic substrates are most widely applied to IGBT module packaging.
The existing various ceramic substrate processes adopt technologies such as sputtering, electroplating, chemical plating, screen printing, eutectic bonding, active metal bonding, etching, co-firing and the like to prepare patterned metal circuit layers with different thicknesses and precision on a ceramic substrate so as to be matched with different application scenes, wherein a direct bonding copper ceramic substrate (Direct Bonded Copper Ceramic Substrate, DBC) and an active metal brazing ceramic substrate (Active Metal Brazing Ceramic Substrate, AMB) are widely applied to high-power and large-temperature-variation IGBT packaging by good electric conduction, heat conduction and thermal stability, and in order to reduce substrate stress and warpage and facilitate welding with a bottom plate, a copper-ceramic-copper sandwich structure is generally adopted, the thicknesses of upper copper layer and lower copper layer are the same and are limited by the process technology, and the patterned metal circuit cannot be refined and is difficult to process in multiple layers. In the traditional IGBT module packaging structure based on the DBC or AMB ceramic substrate, a power circuit and a signal circuit are arranged on the same metal circuit layer, the power circuit area on the metal circuit layer of the ceramic substrate can be corroded by the signal circuit area, so that the problems of current carrying capacity reduction, current distribution unevenness, parasitic parameter increase, heating value increase, heat conduction capacity reduction and the like are caused, uneven shunting and asynchronous switching among all parallel chips are further caused, the layout flexibility of the signal circuit area of the metal circuit layer is limited and is easy to be subjected to electromagnetic interference of the power circuit, the position arrangement flexibility and external connection compatibility of the signal connection terminal are further influenced, and meanwhile, the occupied ceramic substrate area greatly limits the miniaturization development trend of the module volume.
Disclosure of Invention
The application aims to provide a composite ceramic substrate structure to solve the technical problems of current carrying capacity reduction and uneven current distribution caused by arrangement of a power circuit and a signal circuit on the same metal circuit layer in an IGBT module packaging structure in the prior art.
The preferred technical solutions of the technical solutions provided by the present application can produce a plurality of technical effects described below.
In order to achieve the above purpose, the present application provides the following technical solutions:
the application provides a composite ceramic substrate structure, which comprises a power circuit layer and a signal circuit layer, wherein the signal circuit layer is arranged on the power circuit layer;
the occupied area of the signal circuit layer is smaller than that of the power circuit layer, and the signal circuit layer is continuously or discontinuously arranged on the power circuit layer.
Preferably, the power circuit layer comprises a metal layer, a ceramic layer and a power circuit layer, wherein the ceramic layer is arranged on the metal layer, and the power circuit layer is arranged on the ceramic layer; the signal circuit layer is arranged on the power circuit layer.
Preferably, the signal circuit layer includes a signal insulation layer and a signal line layer, the signal line layer is disposed on the signal insulation layer, and the signal insulation layer is disposed on the power line layer.
Preferably, the metal layer, the ceramic layer and the power circuit layer included in the power circuit layer are manufactured by adopting a DBC or AMB ceramic substrate process.
Preferably, the signal insulating layer and the signal circuit layer included in the signal circuit layer are separately manufactured by adopting a high polymer substrate, an insulating metal substrate or a planar ceramic substrate process, and then are fixedly connected with the power circuit layer through hot pressing, inorganic adhesive bonding, welding or low-temperature sintering and other processes; or on the basis of adopting the DBC or AMB ceramic substrate process to manufacture the power circuit layer, adopting the improved LTCC three-dimensional ceramic substrate process to manufacture the power circuit layer through secondary processing.
An IGBT sub-module comprises the composite ceramic substrate structure of any one of the above, and further comprises a semiconductor chip, a power connection device and a signal connection device, wherein the semiconductor chip, the power connection device and the signal connection device are all arranged on the composite ceramic substrate structure;
the semiconductor chip and the power connecting device are connected with the power circuit layer of the composite ceramic substrate structure to form a power transmission circuit;
the semiconductor chip and the signal connecting device are connected with the signal circuit layer of the composite ceramic substrate structure to form a control/sampling signal transmission circuit.
Preferably, the semiconductor chip comprises an IGBT chip and an FRD chip, the power connecting device comprises a power connecting terminal and a power bonding wire, and the power connecting terminal, the IGBT chip, the FRD chip and the power bonding wire are connected with the power circuit layer according to circuit topology in a welding, nano silver sintering or bonding mode to form a power transmission circuit.
Preferably, the signal connection device comprises a signal connection terminal and a signal bonding wire, and the signal connection terminal, a gate/emitter pad on the IGBT chip and the signal bonding wire are connected with the signal circuit layer according to circuit topology by welding or bonding and a mode to form a control/sampling signal transmission circuit.
An IGBT sub-module electrical connection method applied to any one of the above IGBT sub-modules, the method comprising:
the semiconductor chip, the power connecting device and the power circuit layer of the composite ceramic substrate structure are connected in a welding, nano silver sintering or bonding mode according to circuit topology to form a power transmission circuit;
the semiconductor chip and the signal connecting device are connected with the signal circuit layer of the composite ceramic substrate structure in a circuit topology mode through welding or bonding to form a control/sampling signal transmission circuit.
The IGBT power module comprises a plurality of IGBT sub-modules, a bottom plate, an outer frame, a cover plate and packaging glue, wherein the plurality of IGBT sub-modules are arranged above the bottom plate, in the outer frame and below the cover plate, and are packaged through the packaging glue to form the IGBT power module.
By implementing one of the technical schemes, the application has the following advantages or beneficial effects:
according to the application, the power circuit layer and the signal circuit layer are arranged in a layered manner, different transmission circuits can be arranged on the power circuit layer and the signal circuit layer, interference among the transmission circuits is reduced, and the current-carrying heat-conducting capacity, current uniform distribution, parasitic parameters and anti-interference capacity are all optimized.
Drawings
For a clearer description of the technical solutions of embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art, in which:
FIG. 1 is a schematic diagram of a composite ceramic substrate structure according to a first embodiment of the present application;
FIG. 2 is an enlarged schematic view of FIG. 1A according to an embodiment of the present application;
FIG. 3 is a top view of a composite ceramic substrate according to a first embodiment of the application;
fig. 4 is a schematic diagram of the overall structure of an IGBT sub-module according to a second embodiment of the application;
fig. 5 is a top view of an IGBT sub-module according to a second embodiment of the application;
fig. 6 is a circuit topology diagram of an IGBT sub-module in a second embodiment of the application;
fig. 7 is a schematic diagram illustrating the structural separation of an IGBT power module according to a fourth embodiment of the application.
In the figure: 1. a power circuit layer; 11. a metal layer; 12. a ceramic layer; 13. a power line layer; 14. a first chip region; 15. a second chip region; 2. a signal circuit layer; 21. a signal insulating layer; 22. a signal line layer; 23. a first signal circuit layer; 24. a second signal circuit layer; 3. a power connection terminal; 4. an IGBT chip; 5. an FRD chip; 6. a power bond wire; 7. a signal connection terminal; 8. a signal bond wire; 9. an IGBT sub-module; 91. a bottom plate; 92. an outer frame; 93. and a cover plate.
Detailed Description
For a better understanding of the objects, technical solutions and advantages of the present application, reference should be made to the various exemplary embodiments described hereinafter with reference to the accompanying drawings, which form a part hereof, and in which are described various exemplary embodiments which may be employed in practicing the present application. The same reference numbers in different drawings identify the same or similar elements unless expressly stated otherwise. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present disclosure. It is to be understood that they are merely examples of processes, methods, apparatuses, etc. that are consistent with certain aspects of the present disclosure as detailed in the appended claims, other embodiments may be utilized, or structural and functional modifications may be made to the embodiments set forth herein without departing from the scope and spirit of the present disclosure.
In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," and the like are used in an orientation or positional relationship based on that shown in the drawings, and are merely for convenience in describing the present application and to simplify the description, rather than to indicate or imply that the elements referred to must have a particular orientation, be constructed and operate in a particular orientation. The terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. The term "plurality" means two or more. The terms "connected," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, integrally connected, mechanically connected, electrically connected, communicatively connected, directly connected, indirectly connected via intermediaries, or may be an internal connection of two elements or an interaction relationship of two elements. The term "and/or" includes any and all combinations of one or more of the associated listed items. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In order to illustrate the technical solutions of the present application, the following description is made by specific embodiments, only the portions related to the embodiments of the present application are shown.
Embodiment one:
as shown in fig. 1-3, the present application provides a composite ceramic substrate structure, which comprises a power circuit layer 1 and a signal circuit layer 2, wherein the signal circuit layer 2 is arranged on the power circuit layer 1; the signal circuit layer 2 occupies a smaller area than the power circuit layer 1, and is disposed continuously or discontinuously on the power circuit layer 1. Specifically, the signal circuit layer 2 is continuously or discontinuously disposed on the power circuit layer 1, and a plurality of continuous or discontinuous signal circuit layers 2 may be disposed on the power circuit layer 1 for connection with power elements or signal elements, so that the signal circuit layer 2 can be flexibly laid out on the power circuit layer 1. In the present application, the number of signal circuit layers is preferably two, including a first signal circuit layer 23 and a second signal circuit layer 24, the first signal circuit layer 23 and the second signal circuit layer 24 being provided at both ends of the power circuit layer 1 and connected to devices on the power circuit layer 1.
According to the application, the power circuit layer 1 and the signal circuit layer 2 which are arranged on the composite ceramic substrate structure are arranged in a layered manner, so that the substrate area can be reduced. And moreover, different transmission circuits can be arranged on the power circuit layer 1 and the signal circuit layer 2, so that interference among different transmission circuits can be reduced, the whole circuit pattern is simplified and regular, and the current carrying capacity, circuit uniform distribution, parasitic parameters and anti-interference capacity can be optimized.
As an alternative embodiment, as shown in fig. 2, the power circuit layer 1 includes a metal layer 11, a ceramic layer 12, and a power line layer 13, the ceramic layer 12 being disposed on the metal layer 11, the power line layer 13 being disposed on the ceramic layer 12; the signal circuit layer 2 is placed on top of the power line layer 13. Specifically, the metal layer 11, the ceramic layer 12 and the power circuit layer 13 can be made by adopting a DBC or AMB ceramic substrate process, the metal layer 11 and the power circuit layer 13 need to be set to a certain thickness, the thicker metal layer 11 can improve the horizontal heat conduction capability, the thicker power circuit layer 13 can improve the current carrying capability and the horizontal heat conduction capability, the requirements of high current and high heat conduction can be met, and the heat productivity is reduced and the heat conduction capability is enhanced. The metal layer 11 has no electric conduction function, mainly plays a role of heat conduction and a role of welding connection with the bottom plate, and the power circuit layer 13 is connected with the power device and the signal circuit layer 2, so that the power circuit layer can conduct heat and simultaneously conduct electricity.
As an alternative embodiment, as shown in fig. 2, the signal circuit layer 2 includes a signal insulation layer 21 and a signal wiring layer 22, the signal wiring layer 22 is disposed on the signal insulation layer 21, and the signal insulation layer 21 is disposed on the power wiring layer 13. Specifically, the signal insulating layer 21 and the signal circuit layer 22 may be made by using a polymer substrate, an insulating metal substrate or a planar ceramic substrate, and then be fixedly connected to the power circuit layer 13 by hot pressing, inorganic adhesive bonding, welding or low-temperature sintering. It should be noted that, the signal insulating layer 21 and the signal line layer 22 may be separately manufactured by a non-ceramic substrate process such as PCB, IMS, or a planar ceramic substrate process such as TFC, TPC, DPC.
Besides, the signal insulating layer 21 and the signal line layer 22 can be manufactured by secondary processing of three-dimensional ceramic substrate processes such as LTCC and the like on the basis that the power circuit layer 1 is manufactured by adopting a DBC or AMB ceramic substrate process, and the process flexibility is high in manufacturing of the composite ceramic substrate structure.
As shown in fig. 2, the signal insulating layer 21 is disposed between the power line layer 13 and the signal line layer 22, and is used to isolate signals between the power line layer 13 and the signal line layer 22, so as to improve the anti-interference capability. The signal insulating layer 21 in the present application mainly plays a role of insulating and isolating, and has low requirement on thermal conductivity, and the material can be ceramic but is not limited to ceramic.
Embodiment two:
an IGBT sub-module comprising a composite ceramic substrate structure according to the first embodiment, and further comprising a semiconductor chip, a power connection device, and a signal connection device, all disposed on the composite ceramic substrate structure; the semiconductor chip and the power connecting device are connected with the power circuit layer 1 of the composite ceramic substrate structure to form a power transmission circuit; the semiconductor chip and the signal connecting device are connected with the signal circuit layer 2 of the composite ceramic substrate structure to form a control/sampling signal transmission circuit. Specifically, a power transmission circuit and a signal transmission circuit which are formed by a semiconductor chip, a power connecting device and a signal connecting device are distributed in a layered manner in a composite ceramic substrate structure, the power transmission circuit is not affected by the signal transmission circuit, the current carrying capacity, the current distribution and the parasitic parameters can be optimized, and the switching consistency among parallel chips can be ensured.
As an alternative embodiment, as shown in fig. 4, the semiconductor chip includes an IGBT chip 4 and an FRD chip 5, the power connection device includes a power connection terminal 3 and a power bonding wire 6, and the power connection terminal 3, the IGBT chip 4, the FRD chip 5 and the power bonding wire 6 are connected with the power circuit layer 1 in a circuit topology by welding, nano silver sintering or bonding manner to form a power transmission circuit.
Specifically, as shown in fig. 4, the power connection terminal 3 includes a first power connection terminal, a second power connection terminal, and a third power connection terminal; the first power connection terminal is used for direct current positive electrode input, the second power connection terminal is used for direct current negative electrode input, and the third power connection terminal is used for alternating current output. The first power connection terminal P and the second power connection terminal N are disposed at one end of the power line layer 13, and the third power connection terminal U is disposed at the other end of the power line layer 13 for dc input and ac output. The power connection terminals 3 may be fixedly disposed on the power line layer 13 by welding or ultrasonic bonding for providing a current input/output interface for the IGBT chip 4 and the FRD chip 5.
As shown in fig. 4 to 5, the IGBT chip 4 is connected to the FRD chip 5, and both the IGBT chip 4 and the FRD chip 5 are disposed above the power circuit layer 1 and between the first signal circuit layer 23 and the second signal circuit layer 24. Specifically, the IGBT chip 4 and the FRD chip 5 are both disposed on the power circuit layer 1, the single IGBT chip 4 and the single FRD chip 5 are in one-to-one correspondence, and anti-parallel connection is formed between the single IGBT chip 4 and the corresponding single FRD chip 5 through the power bonding wire 6 and the power circuit layer 13.
Specifically, as shown in fig. 5, eight IGBT chips 4 and eight FRD chips 5 are provided, and four IGBT chips 4 and four FRD chips 5 are divided into one group. As shown in fig. 4, the power line layer 13 is provided with a first chip region 14 and a second chip region 15, and each group of IGBT chips 4 and FRD chips 5 is disposed in the first chip region 14 and the second chip region 15, respectively. The first chip region 14 is disposed adjacent to the first signal circuit layer 23, and the second chip region 15 is disposed adjacent to the second signal circuit layer 24. Specifically, the first chip region 14 includes four IGBT chips Q1 and four FRD chips D1, the second chip region 15 includes four IGBT chips Q2 and four FRD chips D2, and chips between the first chip region 14 and the second chip region 15 are all connected by the power bonding wire 6 using an ultrasonic bonding manner. The IGBT chip Q1 in the first chip region 14 and the IGBT chip Q2 in the second chip region 15 are connected side by side. The emitters of the two groups of four IGBT chips Q1 and Q2 which are connected in parallel can be respectively connected in groups through additional signal bonding wires to form emitter feedback, so that the consistency of the switch is further improved, the current carrying capacity and reliability of the IGBT sub-module are improved, and current sharing and high-frequency oscillation prevention are facilitated.
As an alternative embodiment, as shown in fig. 5, the signal connection device includes a signal connection terminal 7 and a signal bonding wire 8, and the signal connection terminal 7, a gate/emitter pad on the IGBT chip 4, and the signal bonding wire 8 are connected with the signal circuit layer 2 by soldering or bonding and in a manner to form a control/sampling signal transmission circuit according to a circuit topology.
Specifically, as shown in fig. 4 to 5, the signal connection terminal 7 is placed on the signal wiring layer 22, and is connected to the gate/emitter pad on the IGBT chip 4 by soldering or bonding using the signal bonding wire 8. The signal connection terminal 7 includes a collector terminal, an emitter terminal, and a gate terminal, which are fixed above the signal circuit layer 2 by soldering or ultrasonic bonding.
As shown in fig. 5 to 6, the signal connection terminal 7 includes two collector terminals C1/C2, two emitter terminals E1/E2, and two gate terminals G1/G2; one collector terminal, one emitter terminal, one gate terminal, two signal connection terminals 7 are divided into two groups, and the two signal connection terminals 7 are respectively disposed on the two signal circuit layers 2. Specifically, the collector terminal C1, the emitter terminal E1, and the gate terminal G1 are fixedly disposed on the first signal circuit layer 23 by soldering or ultrasonic bonding, and the collector terminal C2, the emitter terminal E2, and the gate terminal G2 are also fixedly disposed on the second signal circuit layer 24 by soldering or ultrasonic bonding. The signal connection terminals 7 are arranged in a plurality and are flexibly distributed on the signal circuit layer 2, so that the signal connection terminals can be better matched with an external circuit, the connection requirement of the external circuit is met, and meanwhile, the compatibility of IGBT sub-modules can be improved.
Specifically, other auxiliary elements such as a thermistor, a current sampling resistor and the like can be added on the IGBT sub-module to assist, so that the stability of the IGBT sub-module is ensured.
The composite ceramic substrate is layered, so that the power transmission circuit and the signal transmission circuit are respectively arranged on the substrate, the substrate area is reduced, the volume of the IGBT sub-module is reduced, the anti-interference capability between the power transmission circuit and the signal transmission circuit is improved, the current carrying capability and the switching consistency of a chip assembly in the IGBT sub-module are improved, and the reliability of the IGBT module is improved. And the arrangement of the power transmission circuit is simplified and regular, the current carrying capacity, circuit uniform distribution and parasitic parameters are optimized, and the heat conducting capacity is enhanced while the resistance and the heating value are reduced. The signal transmission circuit does not need to consider large current carrying capacity and high heat conduction requirement, and the high-frequency characteristic and the anti-interference capacity of the signal transmission circuit can be further optimized.
Embodiment III:
an IGBT sub-module electrical connection method applied to the IGBT sub-module according to the second embodiment, the method including: the semiconductor chip, the power connecting device and the power circuit layer 1 of the composite ceramic substrate structure are connected in a welding, nano silver sintering or bonding mode according to circuit topology to form a power transmission circuit; the semiconductor chip, the signal connecting device and the signal circuit layer 2 of the composite ceramic substrate structure are connected in a welding or bonding mode according to circuit topology to form a control/sampling signal transmission circuit to be connected. The power transmission circuit and the signal transmission circuit are respectively arranged on the substrate, so that the area of the substrate is reduced, the volume of the IGBT sub-module is reduced, the anti-interference capability between the power transmission circuit and the signal transmission circuit is improved, the current carrying capability and the switching consistency of a chip component in the IGBT sub-module are improved, and the reliability of the IGBT module is improved.
Embodiment four:
as shown in fig. 7, the IGBT power module includes a plurality of IGBT sub-modules 9 according to the second embodiment, a bottom plate 91, an outer frame 92, a cover plate 93, and a packaging adhesive, and the plurality of IGBT sub-modules 9 are disposed above the bottom plate 91, within the outer frame 92, and below the cover plate 93, and are packaged by the packaging adhesive, thereby forming the IGBT power module. Specifically, in the IGBT power module, a plurality of IGBT sub-modules 9 may be provided according to actual situations, and are encapsulated into a typical half-bridge, H-bridge or three-phase full-bridge inverter power module by assistance of a bottom plate 91, an outer frame 92, a cover plate 93, an encapsulation adhesive, and the like. It should be noted that, a half-bridge power module is obtained after one IGBT sub-module is provided for packaging, an H-bridge power module is obtained after two IGBT sub-modules are provided for packaging, and a three-phase full-bridge inverter power module is obtained after three IGBT sub-modules are provided for packaging.
The embodiment is a specific example only and does not suggest one such implementation of the application.
The foregoing is only illustrative of the preferred embodiments of the application, and it will be appreciated by those skilled in the art that various changes in the features and embodiments may be made and equivalents may be substituted without departing from the spirit and scope of the application. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from the essential scope thereof. Therefore, it is intended that the application not be limited to the particular embodiment disclosed, but that the application will include all embodiments falling within the scope of the appended claims.

Claims (10)

1. The composite ceramic substrate structure is characterized by comprising a power circuit layer (1) and a signal circuit layer (2), wherein the signal circuit layer (2) is arranged on the power circuit layer (1);
the occupied area of the signal circuit layer (2) is smaller than that of the power circuit layer (1), and the signal circuit layer (2) is continuously or discontinuously arranged on the power circuit layer (1).
2. A composite ceramic substrate structure according to claim 1, characterized in that the power circuit layer (1) comprises a metal layer (11), a ceramic layer (12) and a power circuit layer (13), the ceramic layer (12) being placed on top of the metal layer (11), the power circuit layer (13) being placed on top of the ceramic layer (12); the signal circuit layer (2) is arranged above the power circuit layer (13).
3. A composite ceramic substrate structure according to claim 2, characterized in that the signal circuit layer (2) comprises a signal insulation layer (21) and a signal line layer (22), the signal line layer (22) being placed on top of the signal insulation layer (21), the signal insulation layer (21) being placed on top of the power line layer (13).
4. A composite ceramic substrate structure according to claim 2, characterized in that the power circuit layer (1) comprises a metal layer (11), a ceramic layer (12) and a power circuit layer (13) made by DBC or AMB ceramic substrate process.
5. A composite ceramic substrate structure according to claim 3, wherein the signal insulating layer (21) and the signal circuit layer (22) included in the signal circuit layer (2) are separately manufactured by using a polymer substrate, an insulating metal substrate or a planar ceramic substrate, and then are fixedly connected with the power circuit layer (1) through hot pressing, inorganic adhesive bonding, welding or low-temperature sintering and other processes; or on the basis of adopting a DBC or AMB ceramic substrate process to manufacture the power circuit layer (1), adopting an improved LTCC three-dimensional ceramic substrate process to manufacture the power circuit layer through secondary processing.
6. An IGBT sub-module comprising the composite ceramic substrate structure of any one of claims 1 to 5, further comprising a semiconductor chip, a power connection device, and a signal connection device, all disposed on the composite ceramic substrate structure;
the semiconductor chip and the power connecting device are connected with the power circuit layer (1) of the composite ceramic substrate structure to form a power transmission circuit;
the semiconductor chip and the signal connecting device are connected with the signal circuit layer (2) of the composite ceramic substrate structure to form a control/sampling signal transmission circuit.
7. The IGBT sub-module according to claim 6, characterized in that the semiconductor chip comprises an IGBT chip (4), an FRD chip (5), the power connection device comprises a power connection terminal (3) and a power bonding wire (6), and the power connection terminal (3), the IGBT chip (4), the FRD chip (5) and the power bonding wire (6) are connected with the power circuit layer (1) in a circuit topology by welding, nano silver sintering or bonding manner to form a power transmission circuit.
8. An IGBT sub-module according to claim 7, characterized in that the signal connection means comprise signal connection terminals (7) and signal bond wires (8), the signal connection terminals (7), gate/emitter pads on the IGBT chip (4) and signal bond wires (8) and the signal circuit layer (2) being connected by soldering or bonding and means in accordance with the circuit topology to form a control/sampling signal transmission circuit.
9. A method for electrically connecting IGBT sub-modules, characterized in that it is applied to an IGBT sub-module according to any one of claims 6 to 8, the method comprising:
the semiconductor chip, the power connecting device and the power circuit layer (1) of the composite ceramic substrate structure are connected in a welding, nano silver sintering or bonding mode according to circuit topology to form a power transmission circuit;
the semiconductor chip and the signal connecting device are connected with the signal circuit layer (2) of the composite ceramic substrate structure in a circuit topology manner through welding or bonding and a mode to form a control/sampling signal transmission circuit.
10. An IGBT power module, characterized by comprising a plurality of IGBT sub-modules (9) according to any of claims 6-8, a bottom plate (91), an outer frame (92), a cover plate (93) and a packaging glue, wherein a plurality of IGBT sub-modules (9) are placed on the bottom plate (91), in the outer frame (92), under the cover plate (93) and packaged by the packaging glue, forming an IGBT power module.
CN202310968367.1A 2023-08-01 2023-08-01 Composite substrate structure, sub-module, power module and sub-module connection method Pending CN116913866A (en)

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CN202310968367.1A CN116913866A (en) 2023-08-01 2023-08-01 Composite substrate structure, sub-module, power module and sub-module connection method

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Application Number Priority Date Filing Date Title
CN202310968367.1A CN116913866A (en) 2023-08-01 2023-08-01 Composite substrate structure, sub-module, power module and sub-module connection method

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CN116913866A true CN116913866A (en) 2023-10-20

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