CN116864581A - Heterojunction solar cell metal electrode preparation method - Google Patents
Heterojunction solar cell metal electrode preparation method Download PDFInfo
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- CN116864581A CN116864581A CN202310820881.0A CN202310820881A CN116864581A CN 116864581 A CN116864581 A CN 116864581A CN 202310820881 A CN202310820881 A CN 202310820881A CN 116864581 A CN116864581 A CN 116864581A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 45
- 239000002184 metal Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 108
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000009713 electroplating Methods 0.000 claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052802 copper Inorganic materials 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 28
- 230000003647 oxidation Effects 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 13
- 239000011241 protective layer Substances 0.000 claims abstract description 11
- 238000004070 electrodeposition Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000137 annealing Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008595 infiltration Effects 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 claims description 3
- 238000000053 physical method Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000003570 air Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000003064 anti-oxidating effect Effects 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- AECLSPNOPRYXFI-UHFFFAOYSA-J tin(4+);tetrasulfamate Chemical compound [Sn+4].NS([O-])(=O)=O.NS([O-])(=O)=O.NS([O-])(=O)=O.NS([O-])(=O)=O AECLSPNOPRYXFI-UHFFFAOYSA-J 0.000 claims description 2
- 238000010023 transfer printing Methods 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 11
- 230000006872 improvement Effects 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000007772 electroless plating Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
- C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Abstract
The invention discloses a preparation method of a heterojunction solar cell metal electrode, which comprises the steps of preparing a selective seed layer by a dry method, preparing a protective layer by a wet method, preparing a selective electroplating functional structure, preparing a metal conducting layer and an oxidation resistant layer by an electrochemical deposition method; in the invention, the seed layer prepared by the dry method and the protective layer prepared by the wet method are annealed to form a selective electroplating protective film together, and an anti-reflection layer is formed at the position without the seed layer, so that the adhesion of the electroplated copper electrode can be improved, the electrode is prevented from being stripped, and the preparation of the full-area seed layer is not needed; the preparation of a complex pattern mask is not needed, the preparation process is simplified, the problem of the edge of the electroplated copper electrode is solved, the subsequent deplating process is not needed, and the yield of the battery is improved; in addition, the process improvement is suitable for simplifying the preparation process of the heterojunction battery electroplated copper electrode.
Description
Technical Field
The invention belongs to the technical field of heterojunction solar cells, and particularly relates to a preparation method of a metal electrode of a heterojunction solar cell.
Background
The low-temperature silver paste used by the heterojunction battery exceeds 30% of the total cost of the battery, is the largest part of non-silicon cost, and is an important factor for restricting the industrialization of the heterojunction battery. The annealing temperature of the low-temperature slurry is not more than 250 ℃, the conductivity of the electrode is poor, the resistivity is about 6-10Ω & m, the electrode power loss is far greater than that of a conventional battery, and the copper metalized electrode has smaller metal wire resistance of 1.7Ω & m and good conductivity; in addition, the copper grid line can be thinner than the silver grid line, so that the shading loss of copper electroplating is relatively less, and the carrier collection is effectively improved; meanwhile, the inside of the electroplated copper electrode is compact and uniform, no obvious gap exists, and the ohmic loss of the battery electrode can be effectively reduced. Copper plating technology is therefore considered an important breakthrough in the most likely heterojunction industrialization.
Because the adhesion performance of directly electroplating metal on an oxide layer is poor and the metal is easy to fall off, the copper electrode deposition of the heterojunction solar cell needs to solve three problems: 1. selective copper metal deposition; 2. good adhesion to TCO; 3. chemical electrodeposition produces heterojunction cell edge defects. It is desirable to introduce a metal seed layer between the transparent conductive film layer and the metal electrode to improve contact characteristics. The current industrial copper electrode electroplating process is divided into two procedures of patterning and metallization. And (3) patterning: after the ITO layer is prepared, a full-area seed layer is prepared by PVD, then an organic mask is prepared, and after baking, exposure and development treatment, the pattern on the photoresist or photoresist can be developed by a development method. And (3) metallization: copper is electroplated on the seed layer to prepare a copper grid line, then zinc is electroplated or an antioxidant is used for preparing a protective layer, finally the previous mask and copper seed layer are removed to expose the original ITO, and the working procedures of annealing or light injection and the like are carried out in the follow-up. Although the problem of contact between the metal electrode and the ITO layer is solved well, new problems are brought, and the problem of corrosion of the battery edge is easy to occur because of complex copper electroplating process and long process time, so that the yield of the battery is low, and the copper grid line is possibly separated, so that the method is not suitable for large-scale mass production.
Later developed technology simplifies the patterning mask process, although a subsequent deplating process is not needed, the preparation of the metal electrode mask requires an additional and more complex preparation method, and meanwhile, the prepared copper electrode seed layer is subjected to wet electrochemical reduction, so that the problem of grid removal of a copper electrode can be caused.
As shown in fig. 1 and 2, which are schematic views of the manufacturing process of the metal electrode of the heterojunction solar cell of the prior art, fig. 2 shows the heterojunction cell substrate of the a-transparent conductive film; b-preparing a full-area seed layer Ni layer on the heterojunction cell substrate; c-coating a photosensitive adhesive on the heterojunction cell substrate to form an electroplating mask; electroless plating is carried out on the exposed seed layer of the d-heterojunction cell substrate to form a metal conducting layer; e-electroless plating to form a metal oxidation resistant layer Sn layer; f-stripping to wash out the photo-sensitive adhesive 8 coated on the heterojunction battery substrate; g-stripping to remove the seed layer on the heterojunction cell substrate.
Therefore, a heterojunction solar cell metal electrode preparation method is developed to solve the problems.
Disclosure of Invention
The invention aims to solve the problems and designs a preparation method of a heterojunction solar cell metal electrode.
The invention realizes the above purpose through the following technical scheme:
the preparation method of the heterojunction solar cell metal electrode comprises the following steps:
s1, preparing a selective seed layer by a dry method; preparing selective seed layers on two sides of the heterojunction cell substrate;
s2, preparing a protective layer by a wet method; soaking the heterojunction cell substrate treated in the step S1 into a functional solution for surface infiltration, and forming a uniform anti-reflection protection layer on the surface of the heterojunction cell;
s3, preparing a selective electroplating functional structure; annealing the heterojunction battery obtained through the step S2 to form a surface antireflection and selective electroplating protection layer, so that the seed layer is exposed, and a selective electroplating structure is formed;
s4, preparing a metal conducting layer and an oxidation resistant layer by an electrochemical deposition method; and preparing a conductive layer and an oxidation-resistant layer on the seed layer in sequence by electroplating.
The invention has the beneficial effects that:
the seed layer prepared by the dry method and the protective layer prepared by the wet method are annealed to form a selective electroplating protective film and an anti-reflection layer is formed at the position without the seed layer, so that the adhesive force of the electroplated copper electrode can be improved, the electrode is prevented from being stripped, and the preparation of the full-area seed layer is not needed; the preparation of a complex pattern mask is not needed, the preparation process is simplified, the problem of the edge of the electroplated copper electrode is solved, the subsequent deplating process is not needed, and the yield of the battery is improved; in addition, the process improvement is suitable for simplifying the preparation process of the heterojunction battery electroplated copper electrode.
Drawings
Fig. 1 is a schematic diagram of the basic structure of a heterojunction cell of the prior art;
FIG. 2 is a schematic diagram of a fabrication process of a metal electrode of a heterojunction solar cell in the prior art; wherein the heterojunction cell substrate of the a-transparent conductive film; b-preparing a full-area seed layer on the heterojunction cell substrate; c-coating a photosensitive adhesive on the heterojunction cell substrate to form an electroplating mask; electroless plating is carried out on the exposed seed layer of the d-heterojunction cell substrate to form a metal conducting layer; e-electroless plating to form a metal oxidation resistant layer; f-stripping to wash out the photo-sensitive adhesive coated on the heterojunction battery substrate; g-stripping to remove a seed layer on the heterojunction cell substrate;
fig. 3 is a schematic view of the basic structure of a heterojunction cell in the present invention;
FIG. 4 is a schematic diagram of a heterojunction solar cell metal electrode structure according to the present invention;
FIG. 5 is a schematic illustration of a fabrication process of a heterojunction solar cell metal electrode according to the present invention; wherein the heterojunction cell substrate of the a-transparent conductive film; b-preparing a selective seed layer on the heterojunction cell substrate; c-forming a protective layer on the heterojunction cell substrate; d-annealing the heterojunction cell substrate at low temperature to expose the metal seed layer, and forming a selective electroplating structure; e-electroless plating to form a metal conductive layer; f-electroless plating to form a metal oxidation resistant layer;
fig. 6 is a schematic flow chart of a method for preparing a heterojunction solar cell metal electrode according to the invention.
In the figure: 1-N type silicon; 2-intrinsic amorphous silicon; 3-N type amorphous silicon; 4-P-type amorphous silicon; 5-a transparent conductive film; 6-metal electrodes; 61-seed layer; 62-a conductive layer; 63-an oxidation-resistant layer; 7-a protective layer; 8-light sensitive glue.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "inner", "outer", "left", "right", etc. are based on the directions or positional relationships shown in the drawings, or the directions or positional relationships conventionally put in place when the inventive product is used, or the directions or positional relationships conventionally understood by those skilled in the art are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in a specific direction, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, terms such as "disposed," "connected," and the like are to be construed broadly, and for example, "connected" may be either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The following describes specific embodiments of the present invention in detail with reference to the drawings.
As shown in fig. 6, a method for preparing a heterojunction solar cell metal electrode comprises the following steps:
s1, preparing a selective seed layer 61 by a dry method; preparing selective seed layers 61 on both sides of the heterojunction cell substrate;
the selective seed layer 61 is prepared by a physical method, and the physical method can be selected from laser transfer printing, physical vapor deposition, magnetron sputtering or ink-jet printing;
the metal seed layer 61 is prepared by using one or more of nickel, copper, aluminum, silver, chromium, gold, tin and indium as a raw material of the metal seed layer 61, and comprises an adhesive, wherein the adhesive is zinc glass or borate and is used for enhancing the adhesion between the conductive paste and a substrate;
the selective seed layer 61 has a height of 1 μm to 5 μm and a width of 1 μm to 10 μm;
s2, preparing a protective layer 7 by a wet method; soaking the heterojunction cell substrate treated in the step S1 into a functional solution for surface infiltration, and forming a uniform anti-reflection protection layer 7 on the surface of the heterojunction cell;
the functional solution contains SiO 2 Or TiO 2 Is a precursor of (a); in some embodiments, siO is preferred 2 The concentration of the solution is 40ug/L, the soaking time is 20min, and the temperature is 40 ℃; siO on the surface of the cell 2 Surface antireflection can be formed at the position without the grid line, so that the battery efficiency is improved;
s3, preparing a selective electroplating functional structure; annealing the heterojunction cell treated in the step S2 to form a surface antireflection and selective electroplating protection layer 7, and exposing the seed layer 61 to form a selective electroplating structure;
the annealing atmosphere is at least one of air, hydrogen, nitrogen and argon, and the annealing temperature is 120-200 ℃;
s4, preparing a metal conducting layer 62 and an oxidation resistant layer 63 by an electrochemical deposition method; sequentially preparing a conductive layer 62 and an oxidation-resistant layer 63 on the seed layer 61 by electroplating; specifically, the conductive layer 62 is deposited on the surface of the seed layer 61 by bipolar pulse plating;
the conductive layer 62 is a copper layer prepared by electrochemical preparation method, the solution is copper sulfate, the electroplating voltage is 1V-50V, and the electroplating current is 1A/dm 2 -5 A/dm 2 ；
The antioxidation layer 63 is a tin layer prepared by electrochemical preparation method, the solution is tin sulfamate, the electroplating voltage is 1V-10V, and the electroplating current is 0.1A/cm 2 -5 A/cm 2 。
As shown in fig. 3 and 4, a specific structure of the prepared heterojunction solar cell metal electrode 6 is shown, and as shown in fig. 5, the whole preparation process is shown, and the heterojunction cell substrate of the a-transparent conductive film 5; b-preparing a selective seed layer 61Ni layer on the heterojunction cell substrate; c-heterojunction cell substrate formation SiO 2 A protective layer 7; d-annealing the heterojunction cell substrate at low temperature to expose the metal seed layer 61Ni layer to form a selective electroplating structure; e-electroless plating to form a metal conductive layer 62Cu layer; f-electroless plating to form a metal oxidation resistant layer 63Sn layer. The two ends of the N-type silicon 1 are respectively intrinsic amorphous silicon 2, the outer sides of the two layers of intrinsic amorphous silicon 2 are respectively N-type amorphous silicon 3 and P-type amorphous silicon 4, and the outer sides of the N-type amorphous silicon 3 and the outer sides of the P-type amorphous silicon 4 are transparent conductive films 5; on the outside of the transparent conductive film 5 is formed a protective layer 7, a first end of a seed layer 61 is connected to the transparent conductive film 5, a first end of the seed layer 61 is connected to a first end of a conductive layer 62, and an oxidation-resistant layer 63 coats the seed layer 61, the side of the conductive layer 62, and a second end of the conductive layer 62.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that it will be apparent to those skilled in the art that several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the scope of the invention.
Claims (10)
1. The preparation method of the heterojunction solar cell metal electrode is characterized by comprising the following steps of:
s1, preparing a selective seed layer by a dry method; preparing selective seed layers on two sides of the heterojunction cell substrate;
s2, preparing a protective layer by a wet method; soaking the heterojunction cell substrate treated in the step S1 into a functional solution for surface infiltration, and forming a uniform anti-reflection protection layer on the surface of the heterojunction cell;
s3, preparing a selective electroplating functional structure; annealing the heterojunction battery obtained through the step S2 to form a surface antireflection and selective electroplating protection layer, so that the seed layer is exposed, and a selective electroplating structure is formed;
s4, preparing a metal conducting layer and an oxidation resistant layer by an electrochemical deposition method; and preparing a conductive layer and an oxidation-resistant layer on the seed layer in sequence by electroplating.
2. The method of claim 1, wherein in step S1, the selective seed layer is prepared by physical method.
3. The method for preparing the heterojunction solar cell metal electrode according to claim 2, wherein the selective seed layer preparation method is laser transfer printing, physical vapor deposition, magnetron sputtering or ink-jet printing.
4. The method for preparing a metal electrode of a heterojunction solar cell according to claim 1, wherein the metal seed layer raw material used for preparing the selective seed layer is at least one of nickel, copper, aluminum, silver, chromium, gold, tin and indium.
5. The method for preparing a metal electrode of a heterojunction solar cell according to claim 1, wherein the metal seed layer raw material used for preparing the selective seed layer comprises a binder, and the binder is zinc glass or borate.
6. The method for preparing a heterojunction solar cell metal electrode according to claim 1, wherein the height of the selective seed layer is 1 μm-5 μm and the width is 1 μm-10 μm.
7. The method of fabricating a heterojunction solar cell electrode according to claim 1, wherein in step S2, the functional solution contains SiO 2 Or TiO 2 Is a precursor of (a).
8. The method of manufacturing a heterojunction solar cell electrode according to claim 1, wherein in step S3, the annealing atmosphere is at least one of air, hydrogen, nitrogen, and argon gas, and the annealing temperature is in the range of 120 ℃ to 200 ℃.
9. The method for preparing a heterojunction solar cell electroplated copper electrode according to claim 1, wherein in the step S4, the conductive layer is a copper layer, the copper layer is prepared by an electrochemical preparation method, the solution is copper sulfate, the electroplating voltage is 1V-50V, and the electroplating current is 1A/dm 2 -5A/dm 2 。
10. The method for preparing a heterojunction solar cell electroplated copper electrode according to claim 1, wherein in the step S4, the antioxidation layer is a tin layer, the tin layer is prepared by an electrochemical preparation method, the solution is tin sulfamate, the electroplating voltage is 1V-10V, and the electroplating current is 0.1A/cm 2 -5A/cm 2 。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310820881.0A CN116864581A (en) | 2023-07-06 | 2023-07-06 | Heterojunction solar cell metal electrode preparation method |
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| CN202310820881.0A CN116864581A (en) | 2023-07-06 | 2023-07-06 | Heterojunction solar cell metal electrode preparation method |
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| CN116864581A true CN116864581A (en) | 2023-10-10 |
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| CN202310820881.0A Pending CN116864581A (en) | 2023-07-06 | 2023-07-06 | Heterojunction solar cell metal electrode preparation method |
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2023
- 2023-07-06 CN CN202310820881.0A patent/CN116864581A/en active Pending
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