CN114005889A - Method for preparing metal grid line of solar cell - Google Patents
Method for preparing metal grid line of solar cell Download PDFInfo
- Publication number
- CN114005889A CN114005889A CN202010730286.4A CN202010730286A CN114005889A CN 114005889 A CN114005889 A CN 114005889A CN 202010730286 A CN202010730286 A CN 202010730286A CN 114005889 A CN114005889 A CN 114005889A
- Authority
- CN
- China
- Prior art keywords
- layer
- grid line
- amorphous silicon
- depositing
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 57
- 239000002184 metal Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 37
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 36
- 238000003475 lamination Methods 0.000 claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000009713 electroplating Methods 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000007641 inkjet printing Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- 239000012943 hotmelt Substances 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000012188 paraffin wax Substances 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910004156 TaNx Inorganic materials 0.000 claims description 3
- 229910010421 TiNx Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 149
- 230000008569 process Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000012634 fragment Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for preparing a metal grid line of a solar cell, which comprises the following steps: depositing an intrinsic amorphous silicon layer and an n-type amorphous silicon layer on one surface of an n-type silicon substrate, depositing an intrinsic amorphous silicon layer and a p-type amorphous silicon layer on the other surface of the n-type silicon substrate, depositing a transparent conductive oxide film on the n-type amorphous silicon layer and the p-type amorphous silicon layer, and depositing a barrier layer on the transparent conductive oxide layer; depositing a seed layer on the barrier layer; forming a metal grid line pattern on the seed layer in an ink-jet printing mode; performing copper electroplating and tin electroplating on the surface of the seed copper in the pattern area by adopting a horizontal electroplating mode to form a metal grid line; and after the electroplating of the grid line lamination layer is finished, the mask layer, the seed layer and the barrier layer are etched to be clean, the transparent conductive oxide layer is exposed, and the preparation of the copper grid electrode is realized.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a method for preparing a metal grid line of a solar cell.
Background
The heterojunction solar cell is a solar cell with an amorphous silicon thin layer grown on a silicon substrate, has the characteristics of simple structure, low process temperature, high conversion efficiency and good temperature characteristic, is one of high-efficiency cells suitable for large-scale popularization and application, and has good development prospect.
Taking an n-type silicon substrate as an example, the main structure of the heterojunction solar cell shown in fig. 1 is as follows: depositing a thin film intrinsic amorphous silicon layer and a P-type amorphous silicon emitter layer on the illuminated surface of the n-type silicon substrate in sequence to form a heterogeneous PN junction with a thin film intrinsic amorphous silicon interlayer; and depositing a transparent conductive oxide layer on the two doped amorphous silicon thin layers by a sputtering method, and finally forming a grid-shaped metal electrode on the transparent conductive oxide layer.
Forming a grid-shaped metal electrode as a key step for manufacturing the heterojunction solar cell, wherein the conventional method comprises the following steps: and manufacturing a first electroplated copper lamination of the metal grid line by electroplating, wherein the first electroplated copper lamination is used as a main conducting layer of the metal grid line, and manufacturing a second electroplated tin lamination as a welding assistant layer of the metal grid line. And removing the photoresist film outside the grid line to expose the metal lamination covered by the photoresist film, removing the part of the metal lamination through corrosion, and finally exposing the surface of the solar cell.
In the prior art, a dry film is pasted on the surface of a battery, and then a pattern is manufactured through exposure and development; placing the battery piece in a hanger, clamping the battery piece through the hanger, and feeding the battery piece into vertical continuous electroplating equipment for electroplating to obtain a first electroplated copper lamination and a second electroplated tin lamination; and taking the solar cell out of the hanger, removing the mask layer, the barrier layer and the seed layer through film removing etching equipment, and finally exposing the surface of the solar cell. The problem that a certain degree of bad proportion exists in the process of manufacturing the pattern and the pattern is difficult to improve is solved, and the hanger is adopted to clamp the battery piece for electroplating, so that the equipment investment cost of putting the battery piece into the hanger, the equipment investment cost of taking the battery piece out of the hanger, the hanger investment cost, the hanger use cost, the stripping cost and the fragment proportion of a certain degree exist, and the production cost is difficult to effectively reduce.
Disclosure of Invention
Aiming at the problems, the invention provides a method for preparing a metal grid line of a solar cell, which solves the problems that the fragment proportion is difficult to reduce and the production cost of the grid line is high in the prior art.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a method of making a solar cell metal grid line comprising: depositing an intrinsic amorphous silicon layer and an n-type amorphous silicon layer on one surface of an n-type silicon substrate, depositing an intrinsic amorphous silicon layer and a p-type amorphous silicon layer on the other surface of the n-type silicon substrate, depositing a transparent conductive oxide layer on the n-type amorphous silicon layer and the p-type amorphous silicon layer, and depositing a barrier layer on the transparent conductive oxide layer; depositing a seed layer on the barrier layer; covering a hot-melt material on the seed layer in a non-grid line position area in an ink-jet printing mode to form a mask layer and expose the seed layer at the grid line position; manufacturing a conductive grid line lamination and an auxiliary welding layer on the surface of the exposed seed layer in a horizontal electroplating mode; and removing the mask layer, the seed layer and the barrier layer at the covering position of the mask layer by using chemical corrosive liquid in a horizontal corrosion mode to expose the surface of the battery and the welding assistant layer.
Further, the conductive grid line lamination is an electroplated copper lamination with the thickness of 5-40 microns.
Further, the solder-boosting layer is a tin-plating lamination layer with the thickness of 1-20 microns.
Furthermore, after the mask layer, the seed layer and the barrier layer are removed and arranged in horizontal copper plating and horizontal tin plating, the grid line is continuously manufactured.
Further, the transparent conductive oxide layer adopts an ITO layer or a doped indium oxide layer.
Further, the barrier layer is a Ti metal layer or a Ta metal layer, the Ti metal layer is a TiNx metal layer or a TiW metal layer, and the Ta metal layer is a TaNx metal layer, and the thickness of the Ta metal layer is 1-50 nanometers.
Further, the seed layer includes: a copper seed layer, a nickel seed layer, a silver seed layer, and an aluminum seed layer.
From the above description of the structure of the present invention, compared with the prior art, the present invention has the following advantages:
according to the method for preparing the metal grid line of the solar cell, the hot-melt material is covered on the region of the non-grid line position, the mask layer is manufactured, only one process is needed for completion, and the method has the advantages of high yield, simplicity in operation and the like. And manufacturing a conductive grid line lamination layer and an auxiliary welding layer on the surface of the exposed seed layer in a horizontal electroplating mode, then entering horizontal corrosion equipment, continuously removing the mask layer, the barrier layer and the seed layer, and finally exposing the surface of the battery and the auxiliary welding layer. Because the battery is manufactured in the horizontal electroplating and horizontal corrosion modes, a hanger is not needed, equipment for placing the battery pieces into the hanger, equipment investment cost for taking the battery pieces out of the hanger, hanger investment cost, hanger use cost and hanging stripping cost are saved, the breakage rate of the battery can be obviously improved, and the production and manufacturing cost is further reduced.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of an n-type silicon substrate heterojunction solar cell;
FIG. 2 is a schematic view of a metal grid line on the surface of a battery plate according to the present invention;
FIG. 3 is a schematic structural diagram of the intrinsic amorphous silicon layer, the amorphous silicon thin film layer, the conductive oxide layer and the barrier layer deposited according to the present invention;
fig. 4 is a schematic structural diagram of the present invention after a hot-melt material is coated on a region other than a gate line to form a metal gate line;
fig. 5 is a schematic structural view of the metal gate line region after two gate line stacks are formed;
FIG. 6 is a schematic structural view of the hot melt material mask layer removed according to the present invention;
fig. 7 is a schematic view of the metal gate line structure after the metal seed layer and the barrier layer are removed.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 2 to 7, a method for preparing a metal grid line of a solar cell according to the present invention comprises: depositing an intrinsic amorphous silicon layer 2 and an n-type amorphous silicon layer 3 on one surface of an n-type silicon substrate 1, depositing an intrinsic amorphous silicon layer 2 and a p-type amorphous silicon layer 4 on the other surface of the n-type silicon substrate, depositing a transparent conductive oxide layer 5 on the n-type amorphous silicon layer 3 and the p-type amorphous silicon layer 4, and depositing a barrier layer 6 on the transparent conductive oxide layer 5; depositing a seed layer 7 on the barrier layer 6; the manufacturing method of the metal grid line further comprises the following steps: forming a metal grid line pattern 9 on the seed layer 7 by ink-jet printing the hot-melt material layer 8 and exposing the seed layer 7; and manufacturing a conductive grid line lamination layer 10 and an auxiliary welding layer 11 on the surface of the exposed seed layer 7, finally removing the hot-melt material layer 8, and removing the seed layer 6 and the barrier layer 7 at the covering positions by using chemical corrosive liquid to expose the surface of the battery and the auxiliary welding layer 11.
The transparent conductive oxide layer 5 adopts an ITO layer or a doped indium oxide layer, the barrier layer is a Ti metal layer or a Ta metal layer, the Ti metal layer is a TiNx metal layer or a TiW metal layer, and the Ta metal layer is a TaNx metal layer with the thickness of 1-50 nanometers; the seed layer 7 includes: the thickness of the copper seed layer, the nickel seed layer, the silver seed layer and the aluminum seed layer is between 1 and 1000 nanometers.
The conductive grid line lamination layer 10 is an electroplated copper lamination layer serving as a main conductive layer of the metal grid line, and the thickness of the conductive grid line lamination layer is 5-40 micrometers; the soldering assistant layer 11 is an electrolytic tinning lamination layer and has a soldering assistant effect on the main conducting layer of the metal grid line, and the thickness of the soldering assistant layer is 1-20 micrometers;
according to the structure, the method for preparing the metal grid line of the solar cell is prepared by adopting the following steps:
the method comprises the steps of firstly, depositing an intrinsic amorphous silicon layer 2 on the surface of an n-type silicon substrate 1 on the surface of the n-type silicon substrate 1 corroded by alkaline or acidic solution, and manufacturing an n-type amorphous silicon layer 3 and a p-type amorphous silicon layer 4 by adopting a CVD method, wherein the surface reflectivity of the n-type silicon substrate 1 is less than 5% in the wavelength range of 300-1100 nm; then, respectively depositing a transparent conductive oxide layer 5 on the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 3 by adopting a PVD sputtering method, wherein the transparent conductive oxide layer 5 adopts an ITO layer (indium tin oxide) or an indium oxide layer doped with other elements, and has the characteristics that light passes through a material with the thickness of 100 nanometers, the transmittance is at least more than 90 percent, the resistivity of the transparent conductive oxide layer 5 is usually less than 3.5 multiplied by 10 < -4 > ohm-cm, and the thickness is between 50 and 120 nanometers; simultaneously depositing a barrier layer 6 on the transparent conductive oxide layer 5 by a PVD sputtering method, wherein the barrier layer 6 is a Ti metal layer with the thickness of 10-50 nanometers; and simultaneously depositing a seed layer 7 on the barrier layer 6 by a chemical plating or PVD sputtering method, wherein the seed layer 7 is a copper seed layer and has the thickness of 50-10000 nanometers. As shown in fig. 3.
And secondly, printing a layer of hot-melt material 8 on the seed layer 7 by ink jet, forming a metal grid line pattern 9, and exposing the seed layer 7 in the metal grid line pattern 9, wherein the hot-melt material is paraffin or paraffin modifier. As shown in fig. 4.
And thirdly, manufacturing a grid line lamination layer on the surface of the seed layer 7 exposed in the metal grid line pattern 9 by adopting a horizontal electroplating process. The conductive grid line lamination 10 is an electroplated copper lamination and is used as a main conductive layer of the metal grid line, and the thickness of the conductive grid line lamination is 5-40 micrometers; the solder mask layer 11 is an electrolytic tin plating lamination or a chemical tin plating lamination, and is used as a solder mask layer of the metal grid line and a protective layer of the copper lamination, and the thickness of the solder mask layer is 1-20 microns. As shown in fig. 5.
And fourthly, removing the hot-melt material of the mask, and removing the seed layer 7 and the barrier layer 6 at the covering positions by using chemical corrosive liquid to expose the surface of the cell. The process adopts a horizontal corrosion process, copper plating and tin plating are performed horizontally, and grid line manufacturing is completed in the continuous horizontal conveying process of the battery. So far, the fabrication of the whole gate line is completed as shown in fig. 6 and 7.
According to the invention, the mask layer 8 is manufactured in an ink-jet printing mode, the two grid line laminated layers 10 are manufactured through horizontal copper electroplating, horizontal tin electroplating or chemical tin plating, then the mask layer and the seed layer 7 and the barrier layer 6 at the covering positions of the mask layer are removed through a horizontal corrosion process, and the horizontal manufacturing process is adopted in the whole grid line manufacturing process.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A method for preparing a metal grid line of a solar cell, comprising: depositing an intrinsic amorphous silicon layer and an n-type amorphous silicon layer on one surface of an n-type silicon substrate, depositing an intrinsic amorphous silicon layer and a p-type amorphous silicon layer on the other surface of the n-type silicon substrate, depositing a transparent conductive oxide layer on the n-type amorphous silicon layer and the p-type amorphous silicon layer, and depositing a barrier layer on the transparent conductive oxide layer; depositing a seed layer on the barrier layer; covering a hot-melt material on the seed layer in a non-grid line position area in an ink-jet printing mode to form a mask layer and expose the seed layer at the grid line position; manufacturing a conductive grid line lamination and an auxiliary welding layer on the surface of the exposed seed layer in a horizontal electroplating mode; and removing the mask layer, the seed layer and the barrier layer at the covering position of the mask layer by using chemical corrosive liquid in a horizontal corrosion mode to expose the surface of the battery and the welding assistant layer.
2. The method of claim 1, wherein the method comprises the following steps: the conductive grid line lamination thickness is between 5 and 40 microns.
3. The method of claim 1, wherein the method comprises the following steps: the thickness of the soldering flux layer is between 1 and 20 microns.
4. The method of claim 1, wherein the method comprises the following steps: the thickness of the mask layer is between 1 and 50 microns.
5. The method of claim 1, wherein the method comprises the following steps: the mask layer is made of hot melt materials, and is a paraffin material or paraffin modified material.
6. The method of claim 1, wherein the method comprises the following steps: and removing the mask layer, the seed layer and the barrier layer by adopting a horizontal corrosion mode, and after arranging horizontal copper plating and horizontal tin plating, continuously manufacturing the grid line.
7. The method of claim 1, wherein the method comprises the following steps: the conductive oxide layer is an ITO layer or a doped indium oxide layer.
8. The method of claim 1, wherein the method comprises the following steps: the barrier layer is a Ti metal layer or a Ta metal layer.
9. The method of claim 3, wherein the method comprises the following steps: the Ti metal layer is a TiNx metal layer and a TiW metal layer, and the Ta metal layer is a TaNx metal layer, and the thickness of the Ta metal layer is 1-50 nanometers.
10. The method of claim 1, wherein the method comprises the following steps: the seed layer is any one of a copper seed layer, a nickel seed layer, a silver seed layer and an aluminum seed layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010730286.4A CN114005889A (en) | 2020-07-27 | 2020-07-27 | Method for preparing metal grid line of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010730286.4A CN114005889A (en) | 2020-07-27 | 2020-07-27 | Method for preparing metal grid line of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114005889A true CN114005889A (en) | 2022-02-01 |
Family
ID=79920120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010730286.4A Withdrawn CN114005889A (en) | 2020-07-27 | 2020-07-27 | Method for preparing metal grid line of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114005889A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823978A (en) * | 2022-04-24 | 2022-07-29 | 王涛 | Solar cell and manufacturing method thereof |
| CN115084312A (en) * | 2022-03-11 | 2022-09-20 | 浙江爱旭太阳能科技有限公司 | Preparation method of solar cell, solar cell module and power generation system |
| CN115498050A (en) * | 2022-09-23 | 2022-12-20 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
| CN115663066A (en) * | 2022-10-27 | 2023-01-31 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
| CN118039737A (en) * | 2024-02-04 | 2024-05-14 | 苏州皓申智能科技有限公司 | Battery piece and electroplating method thereof |
-
2020
- 2020-07-27 CN CN202010730286.4A patent/CN114005889A/en not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115084312A (en) * | 2022-03-11 | 2022-09-20 | 浙江爱旭太阳能科技有限公司 | Preparation method of solar cell, solar cell module and power generation system |
| CN114823978A (en) * | 2022-04-24 | 2022-07-29 | 王涛 | Solar cell and manufacturing method thereof |
| CN115498050A (en) * | 2022-09-23 | 2022-12-20 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
| CN115498050B (en) * | 2022-09-23 | 2024-03-29 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
| CN115663066A (en) * | 2022-10-27 | 2023-01-31 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
| CN115663066B (en) * | 2022-10-27 | 2023-12-29 | 通威太阳能（安徽）有限公司 | Solar cell manufacturing method and solar cell |
| WO2024087620A1 (en) * | 2022-10-27 | 2024-05-02 | 通威太阳能（安徽）有限公司 | Preparation method for solar cell, and solar cell |
| CN118039737A (en) * | 2024-02-04 | 2024-05-14 | 苏州皓申智能科技有限公司 | Battery piece and electroplating method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114005889A (en) | Method for preparing metal grid line of solar cell | |
| AU2016231480B2 (en) | Photovoltaic devices with electroplated metal grids | |
| US9773928B2 (en) | Solar cell with electroplated metal grid | |
| US8426236B2 (en) | Method and structure of photovoltaic grid stacks by solution based processes | |
| US20140349441A1 (en) | Solar cell with metal grid fabricated by electroplating | |
| CN109148616B (en) | Silicon heterojunction solar cell and preparation method thereof | |
| CN105027300B (en) | The method for forming photovoltaic cell | |
| US20200091362A1 (en) | Solar cell module and method for producing same | |
| WO2015147225A1 (en) | Solar cell module and method for manufacturing same | |
| CN108400175A (en) | A kind of heterojunction solar battery and preparation method with electroplated electrode | |
| CN104701410A (en) | Manufacturing method of metal grating on silicon-based heterojunction cell | |
| US9916936B2 (en) | Method for forming conductive electrode patterns and method for manufacturing solar cells comprising the same | |
| CN113130671A (en) | Silicon heterojunction solar cell and preparation method thereof | |
| JP2014103259A (en) | Solar cell, solar cell module, and method of manufacturing the same | |
| JP7421671B2 (en) | Solar cell manufacturing method, solar cell module, and power generation system | |
| CN108352417A (en) | The manufacturing method of the manufacturing method and crystalline silicon solar cell module of crystalline silicon solar cell | |
| CN106653876A (en) | Solar cell | |
| CN114188431A (en) | Solar cell and preparation method thereof | |
| CN104934497A (en) | Method for manufacturing metal laminate of silicon-based heterojunction battery slice | |
| CN114551610B (en) | Solar cell, electrode structure, cell assembly, power generation system and preparation method | |
| CN217606829U (en) | Solar cell | |
| CN106653935A (en) | Tin layer protecting method in preparation of metal grid line of solar cell | |
| TW202207485A (en) | Preparation method of double-sided P-type battery back structure which is allowed for the passage of large currents and can improve electroplating efficiency and product qualification rate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20220201 |